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TW429473B - Method for forming dielectric layer with capability to resist the diffusion of copper - Google Patents

Method for forming dielectric layer with capability to resist the diffusion of copper

Info

Publication number
TW429473B
TW429473B TW88122132A TW88122132A TW429473B TW 429473 B TW429473 B TW 429473B TW 88122132 A TW88122132 A TW 88122132A TW 88122132 A TW88122132 A TW 88122132A TW 429473 B TW429473 B TW 429473B
Authority
TW
Taiwan
Prior art keywords
dielectric layer
resist
diffusion
capability
copper
Prior art date
Application number
TW88122132A
Other languages
English (en)
Inventor
Ding-Jang Jang
Bo-Tsuen Liou
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88122132A priority Critical patent/TW429473B/zh
Application granted granted Critical
Publication of TW429473B publication Critical patent/TW429473B/zh

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW88122132A 1999-12-16 1999-12-16 Method for forming dielectric layer with capability to resist the diffusion of copper TW429473B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88122132A TW429473B (en) 1999-12-16 1999-12-16 Method for forming dielectric layer with capability to resist the diffusion of copper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88122132A TW429473B (en) 1999-12-16 1999-12-16 Method for forming dielectric layer with capability to resist the diffusion of copper

Publications (1)

Publication Number Publication Date
TW429473B true TW429473B (en) 2001-04-11

Family

ID=21643400

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88122132A TW429473B (en) 1999-12-16 1999-12-16 Method for forming dielectric layer with capability to resist the diffusion of copper

Country Status (1)

Country Link
TW (1) TW429473B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727173B2 (en) 1998-09-03 2004-04-27 Micron Technology, Inc. Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US6858523B2 (en) 2000-01-18 2005-02-22 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US6878507B2 (en) 1998-02-25 2005-04-12 Micron Technology, Inc. Semiconductor processing methods
US7067415B2 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7576400B1 (en) 1998-09-03 2009-08-18 Micron Technology, Inc. Circuitry and gate stacks

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7626238B2 (en) 1998-02-25 2009-12-01 Micron Technology, Inc. Semiconductor devices having antireflective material
US6878507B2 (en) 1998-02-25 2005-04-12 Micron Technology, Inc. Semiconductor processing methods
US7151054B2 (en) 1998-09-03 2006-12-19 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US7576400B1 (en) 1998-09-03 2009-08-18 Micron Technology, Inc. Circuitry and gate stacks
US6727173B2 (en) 1998-09-03 2004-04-27 Micron Technology, Inc. Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US7279118B2 (en) 1998-12-23 2007-10-09 Micron Technology, Inc. Compositions of matter and barrier layer compositions
US7521354B2 (en) 1999-09-01 2009-04-21 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7078356B2 (en) 1999-09-01 2006-07-18 Micron Technology, Inc. Low K interlevel dielectric layer fabrication methods
US7067415B2 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7078328B2 (en) 2000-01-18 2006-07-18 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US7208805B2 (en) 2000-01-18 2007-04-24 Micron Technology, Inc. Structures comprising a layer free of nitrogen between silicon nitride and photoresist
US7435688B2 (en) 2000-01-18 2008-10-14 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US7045277B2 (en) 2000-01-18 2006-05-16 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US6858523B2 (en) 2000-01-18 2005-02-22 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
US7638436B2 (en) 2000-01-18 2009-12-29 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees