TW428305B - Manufacturing method of dielectric layer - Google Patents
Manufacturing method of dielectric layerInfo
- Publication number
- TW428305B TW428305B TW88110306A TW88110306A TW428305B TW 428305 B TW428305 B TW 428305B TW 88110306 A TW88110306 A TW 88110306A TW 88110306 A TW88110306 A TW 88110306A TW 428305 B TW428305 B TW 428305B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- forming
- manufacturing
- nitride layer
- nitride
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
- Formation Of Insulating Films (AREA)
Abstract
A manufacturing method of dielectric layer includes the following steps: forming a first oxide on the surface of a polysilicon layer; forming a first nitride layer with a high silicon content on the first oxide layer; forming a second nitride layer with a low silicon content on the first nitride layer; then, conducting oxidation process for the second nitride layer and forming a second oxide layer on the surface of the second nitride to complete the dielectric structure with multi-layered nitride layer structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW88110306A TW428305B (en) | 1999-06-21 | 1999-06-21 | Manufacturing method of dielectric layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW88110306A TW428305B (en) | 1999-06-21 | 1999-06-21 | Manufacturing method of dielectric layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW428305B true TW428305B (en) | 2001-04-01 |
Family
ID=21641201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW88110306A TW428305B (en) | 1999-06-21 | 1999-06-21 | Manufacturing method of dielectric layer |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW428305B (en) |
-
1999
- 1999-06-21 TW TW88110306A patent/TW428305B/en not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |