TW428123B - The half-tone phase shift mask - Google Patents
The half-tone phase shift maskInfo
- Publication number
- TW428123B TW428123B TW88122135A TW88122135A TW428123B TW 428123 B TW428123 B TW 428123B TW 88122135 A TW88122135 A TW 88122135A TW 88122135 A TW88122135 A TW 88122135A TW 428123 B TW428123 B TW 428123B
- Authority
- TW
- Taiwan
- Prior art keywords
- phase shift
- tone phase
- shift mask
- width
- photomask substrate
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
A half-tone phase shift mask, which comprises a photomask substrate, and a half-tone phase shift layer formed on the photomask substrate, it is necessary for the half-tone phase shift layer to make the light passing through the photomask substrate to have a 180 degree phase shift, wherein the half-tone phase shift layer further includes a main feature with the first width, and an assist feature having the second width arranged in parallel with some distances on both sides of the main feature. For example, if the exposure light source is deep UV light, the wafer size is of the first depth is about 0.1-0.15 mu m, the second width is 0.055-0.09 mu m, and the distance between the main feature and the assist feature is 0.22-0.27 mu m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW88122135A TW428123B (en) | 1999-12-16 | 1999-12-16 | The half-tone phase shift mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW88122135A TW428123B (en) | 1999-12-16 | 1999-12-16 | The half-tone phase shift mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW428123B true TW428123B (en) | 2001-04-01 |
Family
ID=21643403
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW88122135A TW428123B (en) | 1999-12-16 | 1999-12-16 | The half-tone phase shift mask |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW428123B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI451189B (en) * | 2008-04-25 | 2014-09-01 | S&S Tech Co Ltd | Half-tone phase shift blankmask, half-tone phase shift photomask and manufacturing method thereof |
-
1999
- 1999-12-16 TW TW88122135A patent/TW428123B/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI451189B (en) * | 2008-04-25 | 2014-09-01 | S&S Tech Co Ltd | Half-tone phase shift blankmask, half-tone phase shift photomask and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |