經濟部中央標準局員工消費合作社印製 A7 ____B7_ I ., 五、發明説明（彳) 發明領域 本發明係關於電子設備之電磁波干擾（EMI)遮蔽膜， 尤其有關一種結合物理氣相沉積及電鍍來形成該電磁波干 擾遮蔽膜的方法。 ' . ... · 發明背景 電磁波干擾（electromagnetic interference,以下簡稱 .EMI)爲不想要的能量放射，其頻率範圍介於60Hz至超過 1 000MHz，其中0.01至1000MHz部分爲無線電頻率干擾 (RFI)的範圍。 EMI的放射係伴隨電子設備的使用而產生，例如微波 爐、個人電腦等等。EMI的放射將造成電子設備彼此間的 干擾而產生雜訊的問題，於是影響到，例如無線電等通訊 器材、實驗儀器及人工心臓等等，的正常運作。 目前世界上先進國家已經對電子設備之最大可允許 EMI放射立下標準，例如美國聯邦通訊委員會（FCC)於 1983年對會生ΙΟΚΗζ至1000MHz的數位電子產品立下標 準。 EMI的消除一般可藉由在各項電子元件或設備上形成 一遮蔽而將放射包住。對於非導電材料的EMI遮蔽方法常 用的包括在電子設備的塑膠外殼上形成一金屬性塗層，例 如噴漆、化學金屬化及真空金屬化等。金屬的種類包括 銅、銀、鉻、鎳 '銀 '金、鋅等。 使用陰極濺鍍於塑膠材料上形成金屬塗層具有高耗能 -3 - 本紙張尺度適用中國國家標準（匚灿）八4規格（210父297公釐） -----^---^--^ 裝-- - Γ). (請先閱讀背面之注意事項再填寫本頁) -訂 經濟部中央標準局員工消費合作社印製 A7 B7 . 五、發明説明fc ) 及會扭曲塑膠材質的缺點。因此，最近業者注意力均集中 在以無電解電鑛金屬（electroless metals)來形成EMI遮蔽 膜。一典型的例子可參見美國專利第4514486號，其中一 無電解零鍍銅及形成於其上的無電解電鍍鎳的雙層EMI遮 蔽膜被揭示。 無電解電鍍金屬膜的形成需要將一物品浸於一系列水 溶液的前處理步驟，再浸於一貴重金屬催化劑溶液，最後 再浸於一含有想要的金屬的無電解電鍍液，藉由被吸附的 貴重金屬催化劑而將該想要金屬還原沉積在該物品表面 上。無電解電鍍金屬膜的形成除了具有費時費工的缺點 外，並且不具選擇性，亦即在整個被浸於該水溶液的物品 表面上均會形成無電解電鍍金屬膜。對於不想要形成有無 電解電鍍金屬膜的部分，例如電子設備的外表面，又必須 再塗佈一外塗層加予掩蓋。 於美國專利第4670306號及英國專利申請第2 1 69925 A 號均揭示有如何形成具選擇性無電解電鍍金屬膜的方法， 其中進一步包含了附加的步驟及化學品的使用，更不利於 生產成本。 本發明之主要目的在提供一種可使用傳統電鍍技術於 一非導電材料的表面選擇性地形成EMI遮蔽膜的方法。 發明槪要 爲了達成上述目的一依照本發明內容而完成的EMI遮 蔽膜的形成方法包含下列步驟： -4 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X^7公兹) (請先閲讀背面之注意事項再填寫本頁)A7 ____B7_ printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs I., V. Description of the Invention (彳) Field of the Invention The present invention relates to an electromagnetic interference (EMI) shielding film for electronic equipment, and more particularly to a method combining physical vapor deposition and electroplating. A method of forming the electromagnetic wave interference shielding film. '... · BACKGROUND OF THE INVENTION Electromagnetic interference (EMI) is an unwanted emission of energy. Its frequency ranges from 60 Hz to more than 1,000 MHz, of which 0.01 to 1000 MHz is part of radio frequency interference (RFI). range. The emission of EMI is accompanied by the use of electronic equipment, such as microwave ovens, personal computers, and so on. The emission of EMI will cause interference between electronic devices and generate noise problems, which will affect the normal operation of communication equipment such as radios, experimental instruments, and artificial palpitations. At present, advanced countries in the world have set standards for the maximum allowable EMI emissions from electronic equipment. For example, the United States Federal Communications Commission (FCC) in 1983 set standards for digital electronic products that will produce 10KHz to 1000MHz. Elimination of EMI can generally be achieved by enveloping radiation by forming a shield on various electronic components or equipment. EMI shielding methods for non-conductive materials often include forming a metallic coating on the plastic casing of electronic equipment, such as spray painting, chemical metallization, and vacuum metallization. The types of metals include copper, silver, chromium, nickel 'silver' gold, zinc, and so on. Cathodic sputtering is used to form metal coatings on plastic materials with high energy consumption -3-This paper size is applicable to China National Standard (匚 灿) 8 4 specifications (210 father 297 mm) ----- ^ --- ^ -^ Install--Γ). (Please read the notes on the back before filling out this page)-Order printed by A7 B7 of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention fc) Disadvantages. Therefore, recent industry attention has focused on forming EMI shielding films using electroless metals. A typical example can be found in U.S. Patent No. 4,514,486, in which a double-layer EMI shielding film of electroless zero copper plating and electroless nickel plating formed thereon is disclosed. The formation of electroless plated metal film requires a product to be immersed in a series of pretreatment steps of aqueous solution, then immersed in a precious metal catalyst solution, and finally immersed in an electroless plating solution containing the desired metal. Precious metal catalyst to reduce the desired metal on the surface of the article. In addition to the disadvantages of being time-consuming and labor-intensive, the formation of an electroless plated metal film is not selective, that is, an electroless plated metal film is formed on the entire surface of an article immersed in the aqueous solution. For those portions where the electroless metal plating film is not desired to be formed, such as the outer surface of an electronic device, an outer coating must be applied and covered. Both U.S. Patent No. 4670306 and U.S. Patent Application No. 2 1 69925 A have disclosed how to form a selective electroless plated metal film, which further includes additional steps and the use of chemicals, which is not conducive to production costs. . The main object of the present invention is to provide a method for selectively forming an EMI shielding film on the surface of a non-conductive material using a conventional plating technique. In order to achieve the above-mentioned object, a method for forming an EMI shielding film completed in accordance with the present invention includes the following steps: -4-This paper size applies the Chinese National Standard (CNS) A4 specification (210X ^ 7mm) (please first (Read the notes on the back and fill out this page)
A7 ________B7_ , , 五、發明説明（3 ) a) 藉由物理氣相沉積於該非導電材料的一表面上形成 一第一金屬膜；及 b) 將步驟a)所獲得之沉積過非導電材料作爲一陰極 (cathode)置於一第一電鑛液中，並於該第—金屬膜上電鑛 上一第二金屬膜。 較佳的，本發明方法進一步包含： c) 將步驟b)所獲得的電鍍過非導電材料作爲一陰極置 於一第二電鍍液中，並於該第二金屬膜上電鍍士一第三金 屬膜。 於本發明方法中該第一金屬膜、第二金屬膜及第三金 壓膜係個別地選自銅、銀、鎳、鋅、金、鉑、鉻、鋁、 鎘、鎢及其等之合金所組成之組群。較佳的，該第一金屬 膜及第二金屬膜均爲銅，該第三金屬膜係鎳。 適用於本發明方法的非導電材料例如包括（但不限於） 固態聚合物.，玻璃或陶瓷。較佳的，該非導電材料爲塑 膠。 發明之詳細說明 經濟部中央標準局員工消費合作社印裝 本發明對電子設備的EMI遮蔽膜提供一新穎的製備方 法。本發明方法具有生產成本降低及可在電子設備的表面 的特定部分形成EMI遮蔽膜的優點。 一般電子設備的外殻多爲塑膠材質’例如聚苯乙烯， 聚醯胺、丙嫌腈·丁二燃-苯乙儲（ABS)共聚合物' 聚碳酸 酯等。此等塑膠材質因不具導電性，因此不能以電鍍方法 本紙張尺度適用中國國家標準（CNS ) A4現格（210X297公釐） 經濟部中央標準局負工消費合作社印製 Α7 Β7 五、發明説明（4 ) 在其表面上形成金屬膜。然電鍍法如業界人士習知爲一非 常成熟的技術，可在室溫下迅速成長金屬膜（相對於無電 解電鍍金屬膜及濺鍍金屬膜）。因此，如果可以成功的將 電鍍技術用來形成EMI遮蔽膜，將可顯著地增進EMI遮蔽 膜的生產效率及降低生產成本》 本案發明人爲了達成此目的，首先以物理氣相沉積的 方式在洗淨的塑膠基材表面上形成一層金屬薄膜，此金屬 薄膜的厚度只需一很薄的程度足夠作爲一後續電鍍處理的 陰極即可。由於只需很薄的金.屬薄膜，較佳的介於0.1 -1 ·〇 μιη，因此該物理氣相沉積的操作溫度及時間可被控制 在一實質上不損及該塑膠材質的情況下。物理氣相沉積爲 一業界習知的技術，主要包括蒸鑛及濺鍍，在本發明方法 中以長膜速率較快的濺鍍爲較合適。習知技藝中任何已知 的濺鍍技術均可使用於本發明。一合適的濺鍍操作條件 爲：10_2 -10·5 torr壓力，20-70°C溫度，1-10分鐘，300-700 V電壓。於本發明的一較佳實施例中，一 ABS/聚碳酸 酯塑膠基材於1〇_2 torr壓力及450V電壓的氬氣電漿中在 5〇°C溫度濺鍍4分鐘時間而形成一厚度約0.2μιη的銅膜。 於該塑膠基材表面上藉物理氣相沉稹所形成的金屬薄 膜，因爲物理氣相沉積具方向性，於是可藉由冶具遮蓋方 式只在該基材表面的未遮蓋特定部分形成。如此，在後續 的電鍍步驟中將只會在該特定部分鍍上金屬膜，於是在該 塑膠基材的表面形成具有特定形狀的ΕΜΙ遮蔽膜。一次以 上的電鍍步驟可被接續進行來形成一具有多重膜構造的 本紙張尺度適用中國國家標隼（CMS ) Α4規格（210X297公釐）. II------C)裝----"II 訂------Q (請先聞讀背面之注意事項再填寫本頁) A7 B7 五、發明説明（5 ) EMI遮蔽膜。較佳的，該多重膜構造的EMI遮蔽膜包含第 一層爲導電性佳的銅膜及第二層爲耐磨性佳的鎳膜》 適用於本發明的電鍍技術並無特別限制。較佳的，以 對欲電鍍的塑膠基材不具有不想要化學反應，例如侵飩， 爲原則。具有物理氣相沉積金屬膜的塑膠基材被作爲一陰 極浸於一電鍍系統的電鍍液中，於通入一直流電到該電鍍 系統的情形下該電鍍液中的金屬離子被還原沉積於該物理 氣相沉積金屬膜上。適合電鍍銅聘的電鍍液最常用的爲硫 酸銅水溶液，而電鍍鎳最常用.的電鑛液爲含有硫酸鎳、 NiCl2及H3B〇3的混合水溶液。 於本發明的較佳實施例中，一具有濺鍍銅膜（厚度約 0.2μιη)的ABS/聚碳酸酯塑膠基材被接連電鍍上一厚度約 5 μηι的銅膜及厚度約1 μπι的鎳膜，而形成ΕΜΙ遮蔽膜。經 檢視此ΕΜ.Ι遮蔽膜，發現其外觀不具有裂縫，並且附著情 形優良，不易從塑膠基材表面剝落。 nn —^ϋ ^^—^1 ml ί.ι-ΙΛΊ·'I I 1— - (請先閱讀背面之注意事項再填寫本M) -0 ΙΦ 經濟部中央標準局員工消费合作社印製 本紙张尺度適用中國國家標準（CNS ) A4現格（210X297公釐）A7 ________B7_,, V. Description of the invention (3) a) forming a first metal film on a surface of the non-conductive material by physical vapor deposition; and b) using the deposited non-conductive material obtained in step a) as A cathode is placed in a first electric ore liquid, and a second metal film is electric ore on the first metal film. Preferably, the method of the present invention further includes: c) placing the plated non-conductive material obtained in step b) as a cathode in a second plating solution, and plating a third metal on the second metal film membrane. In the method of the present invention, the first metal film, the second metal film, and the third gold pressed film are individually selected from copper, silver, nickel, zinc, gold, platinum, chromium, aluminum, cadmium, tungsten, and alloys thereof. A group of people. Preferably, the first metal film and the second metal film are both copper, and the third metal film is nickel. Non-conductive materials suitable for use in the method of the invention include, but are not limited to, solid polymer, glass or ceramic. Preferably, the non-conductive material is plastic. Detailed description of the invention Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs The present invention provides a novel method for preparing EMI shielding films for electronic equipment. The method of the present invention has the advantages of reducing production costs and forming an EMI shielding film on a specific portion of the surface of an electronic device. The shell of general electronic equipment is mostly made of plastic material, such as polystyrene, polyamine, propylene nitrile · butadiene-styrene-styrene storage (ABS) copolymer, polycarbonate, and the like. These plastic materials are not conductive, so they cannot be electroplated. The paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm). Printed by the Consumers ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 4) A metal film is formed on the surface. However, the electroplating method is well-known to those in the industry as a very mature technology that can rapidly grow metal films at room temperature (as opposed to electroless metal plating and sputtering metal films). Therefore, if the electroplating technology can be successfully used to form an EMI shielding film, the production efficiency of the EMI shielding film can be significantly improved and the production cost can be significantly reduced. "In order to achieve this goal, the inventor of this case firstly performed physical vapor deposition A metal thin film is formed on the surface of the clean plastic substrate. The thickness of the metal thin film only needs to be thin enough to be used as a cathode for subsequent electroplating. Since only a thin gold metal film is needed, preferably between 0.1 -1 · 0 μιη, the operating temperature and time of the physical vapor deposition can be controlled under a condition that does not substantially damage the plastic material . Physical vapor deposition is a well-known technique in the industry, and mainly includes vapor deposition and sputtering. In the method of the present invention, sputtering with a long film rate is relatively suitable. Any sputtering technique known in the art can be used in the present invention. A suitable sputtering operation condition is: 10_2 -10 · 5 torr pressure, 20-70 ° C temperature, 1-10 minutes, 300-700 V voltage. In a preferred embodiment of the present invention, an ABS / polycarbonate plastic substrate is sputtered in an argon plasma having a pressure of 10_2 torr and a voltage of 450V at a temperature of 50 ° C for 4 minutes to form a substrate. A copper film with a thickness of about 0.2 μm. The metal thin film formed by physical vapor deposition on the surface of the plastic substrate, because the physical vapor deposition is directional, can be formed only on the uncovered specific part of the surface of the substrate by means of a masking method. In this way, in the subsequent electroplating step, a metal film will be plated only on the specific portion, and an EMI shielding film having a specific shape will be formed on the surface of the plastic substrate. More than one electroplating step can be successively performed to form a paper with a multiple film structure. The paper size is applicable to the Chinese National Standard (CMS) A4 specification (210X297 mm). II ------ C) equipment ---- " II Order ------ Q (Please read the precautions on the back before filling this page) A7 B7 V. Description of the invention (5) EMI shielding film. Preferably, the EMI shielding film with a multiple film structure includes a first layer of a copper film with good conductivity and a second layer of a nickel film with good abrasion resistance. The plating technology applicable to the present invention is not particularly limited. Preferably, the plastic substrate to be plated does not have an unwanted chemical reaction, such as invasion, as a principle. A plastic substrate having a physical vapor-deposited metal film is immersed in a plating solution of a plating system as a cathode, and metal ions in the plating solution are reduced and deposited on the physics when a direct current is passed to the plating system Vapor deposition on a metal film. The most commonly used electroplating solution suitable for electroplating copper is copper sulfate aqueous solution, while the electroplating nickel is the most commonly used. The electric ore solution is a mixed aqueous solution containing nickel sulfate, NiCl2 and H3B03. In a preferred embodiment of the present invention, an ABS / polycarbonate plastic substrate with a sputtered copper film (thickness about 0.2 μm) is successively plated with a copper film having a thickness of about 5 μm and nickel having a thickness of about 1 μm. Film to form an EMI shielding film. Upon inspection of this EM.I masking film, it was found that the EM.I masking film had no cracks in its appearance, had excellent adhesion, and was not easily peeled off from the surface of the plastic substrate. nn — ^ ϋ ^^ — ^ 1 ml ί.ι-ΙΛΊ · 'II 1—-(Please read the notes on the back before filling in this book) -0 ΙΦ The paper size of the paper printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Applicable to China National Standard (CNS) A4 (210X297 mm)