CN1243464C - Method for forming electromagnetic wave interference shielding film - Google Patents
Method for forming electromagnetic wave interference shielding film Download PDFInfo
- Publication number
- CN1243464C CN1243464C CN 00100516 CN00100516A CN1243464C CN 1243464 C CN1243464 C CN 1243464C CN 00100516 CN00100516 CN 00100516 CN 00100516 A CN00100516 A CN 00100516A CN 1243464 C CN1243464 C CN 1243464C
- Authority
- CN
- China
- Prior art keywords
- metal film
- film
- shielding film
- conductive material
- electroplating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- 238000009713 electroplating Methods 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 239000012811 non-conductive material Substances 0.000 claims abstract 7
- 239000004033 plastic Substances 0.000 claims description 16
- 229920003023 plastic Polymers 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract 2
- 238000007772 electroless plating Methods 0.000 description 10
- 239000004020 conductor Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 239000004568 cement Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004901 spalling Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The present invention relates to a method for forming an electromagnetic interference (EMI) shielding film by combining physical vapor deposition and electroplating. A first step of forming a first metal film on a surface of a non-conductive material by physical vapor deposition; and a second step of electroplating a second metal film on the first metal film in an electroplating system. The first metal film provides conductive properties so that a second metal film can be electroplated thereon as a cathode in the electroplating system in the second step. The second metal film may be copper or silver having good conductivity. The method further includes a step of forming a protective film, such as a nickel protective film, on the second metal film.
Description
The invention relates to Electromagnetic Interference (EMI) shielding film of electronic equipment, especially relevant a kind of in conjunction with physical vapour deposition (PVD) and electroplate the method that forms electromagnetic wave interference shading film.
Electromagnetic Interference (electromagnetic interference is hereinafter to be referred as EMI) is undesired energy radiation, and to surpassing 1000MHz, wherein 0.01 to 1000MHz partly is the scope of radio frequency interference (RFI) to its frequency range between 60Hz.
The radiation of EMI follows the use of electronic equipment to produce, for example microwave oven, PC or the like.Disturb the noise problem that produces owing to the radiation of EMI will cause electronic equipment signal to each other, so have influence on the normal operation of Communication Equipment, laboratory apparatus and artificial hearts or the like such as radio for example.
Advanced country can allow the EMI radiation to make standard to the maximum of electronic equipment in the world at present, and for example US Federal Communication Committee (FCC) has formulated standard in nineteen eighty-three to the data electronic product that meeting produces 10KHz to 1000MHz.
The elimination of EMI generally can encase radiation by form a baffle on every electronic component or equipment.For forming a metallicity coating on the EMI masking methods of the non-conducting material plastic shell that is included in electronic equipment commonly used, for example spray paint, chemical metallization and vacuum metallization processes etc.The kind of metal comprises copper, silver, chromium, nickel, silver, gold, zinc etc.
Use (cathode) sputtering on plastic material, to form the shortcoming that metal coating has highly energy-consuming and can twist plastic cement material.Therefore, people's attentiveness all concentrates on electroless plating metal (electroless metals) and forms the EMI shielding film recently.One typical example can be referring to No. the 4514486th, United States Patent (USP), wherein an electroless plating copper and to form the double-deck EMI shielding film of electroless plating nickel thereon revealed.
The formation of electroless plating metal film needs the pre-treatment step that article is immersed in a series of aqueous solution, be immersed in again in the precious metal catalyst solution, at last be immersed in one again and contain in the electroless plating liquid of the metal of wanting, the metallic reducing that this is wanted is deposited on this article surface owing to the precious metal catalyst that is adsorbed.The formation of electroless plating metal film and does not have selectivity except having time-consuming shortcoming of taking a lot of work, promptly all can form the electroless plating metal film on the whole article surface that is dipped in this aqueous solution.For the part of not wanting to be formed with the electroless plating metal film, for example the outer surface of electronic equipment must be coated with an external coating again again and be covered.
No. the 4670306th, United States Patent (USP) and UK Patent Application all disclose have how to form the method with selectivity electroless plating metal film 2169925A number, have wherein further comprised the additional step and the use of chemicals, more are unfavorable for the reduction of production cost.
Main purpose of the present invention is to provide a kind of method of using the traditional electrical coating technology to form the EMI shielding film on the surface selectivity ground of a non-conducting material.
The present invention's formation method of an EMI shielding film of finishing according to content of the present invention in order to achieve the above object comprises the following step:
A) on a surface of non-conducting material, form one first metal film by physical vapour deposition (PVD); And
B) non-conducting material that step a) obtained to deposit is placed one first electroplate liquid as a negative electrode (cathode), and power at first metal film and to plate one second metal film.
Preferable, the inventive method further comprises:
C) non-conducting material that step b) obtained to electroplate is placed one second electroplate liquid as a negative electrode, and power at second metal film and to plate one the 3rd metal film.
Preferable, in the physical vapour deposition (PVD) of step a), use one to cover the some that hides on the surface of non-conducting material, not covered part forms so first metal film is just on the surface of non-conducting material.
First metal film, second metal film and the 3rd metal film are individually to be selected from the cohort that copper, silver, nickel, zinc, gold, platinum, chromium, aluminium, cadmium, tungsten and alloy thereof are formed in the methods of the invention.Preferable, this first metal film and second metal film are copper, and the 3rd metal film is a nickel.
The non-conducting material that is applicable to the inventive method for example includes, but is not limited to solid polymer, glass or pottery.Preferable, this non-conducting material is a plastic cement.
The present invention provides the preparation method of a novelty to the EMI shielding film of electronic equipment.The inventive method has that production cost reduces and can form the advantage of EMI shielding film at the specific part on the surface of electronic equipment.
The shell of general electronic equipment mostly is plastic cement material, polystyrene for example, polyamide, acrylonitrile-butadiene-styrene (ABS) (ABS) co-polymer, Merlon etc.Therefore these plastic cement materials can not form metal film with electro-plating method in its surface because of not having conductivity.Yet galvanoplastic are confirmed as a kind of very mature technique by this area personage, the metal film that can at room temperature shoot up (with respect to electroless plating metal film and jet-plating metallization film).Therefore, if can success electroplating technology is used for forming the EMI shielding film, can promote the production efficiency of EMI shielding film significantly and reduce production costs.
The inventor is in order to reach this purpose, and at first the mode with physical vapour deposition (PVD) forms the layer of metal film on the plastic rubber substrate surface of cleaning, and the thickness of this metallic film only needs a very thin degree enough to get final product as the negative electrode of a follow-up electroplating processes.Owing to only need a very thin metallic film, preferable between 0.1-1.0 μ m, so the operating temperature of this physical vapour deposition (PVD) and time should be controlled in one and not undermine in fact under the situation of this plastic cement material and carry out.Physical vapour deposition (PVD) is the known technology of those skilled in the art, mainly comprises evaporation and sputter, in the methods of the invention with long film speed faster sputter for more suitable.Any known sputter technology all can be used in the present invention in the known skill.One suitable sputter operating condition is: 10
-2-10
-5Torr pressure, 30-200 ℃ of temperature, 1-10 minute, 300-700V voltage.In a preferred embodiment of the present invention, an ABS/ Merlon plastic rubber substrate is 10
-2In the argon gas electricity slurry of torr pressure and 450V voltage, form the copper film of the about 0.2 μ m of a thickness in 4 fens clock times of 50 ℃ of temperature sputters.
On this plastic rubber substrate surface, use the formed metallic film of physical vapour deposition (PVD), because physical vapour deposition (PVD) has directivity, so can only form by cover covering mode at the not covering specific part of this substrate surface.So, in follow-up plating step, will only can plate metal film, so form EMI shielding film with given shape on the surface of this plastic rubber substrate at specific part.Once Yi Shang plating step can be had the EMI shielding film of multiple membrane structure continuously.Preferable, it is that the good copper film of conductivity and the second layer are the good nickel film of resistance to wear that the EMI shielding film of this multiple membrane structure comprises ground floor.
There is no particular restriction to be applicable to electroplating technology of the present invention.Preferable, the plastic rubber substrate that desire is electroplated does not have undesired chemical reaction, for example corrodes, as principle.Plastic rubber substrate with physical vapour deposition (PVD) metal film is used as a negative electrode and is immersed in the electroplate liquid of an electroplating system, is feeding a direct current under the situation of this electroplating system, and the metal ion in the electroplate liquid is reduced and is deposited on this physical vapour deposition (PVD) metal film.Be fit to the electroplate liquid of electroplating copper film the most frequently used be copper sulfate solution, and the most frequently used electroplate liquid of electronickelling is for containing nickelous sulfate, NiCl
2And H
3BO
3Mixed aqueous solution.
In preferred embodiment of the present invention, an ABS/ Merlon plastic rubber substrate with sputter copper film (the about 0.2 μ m of thickness) is electroplated the copper film of the about 5 μ m of a last thickness and the nickel film of the about 1 μ m of thickness in succession, and forms the EMI shielding film.Through checking this EMI shielding film, find that its outward appearance does not have the crack, and it is good to adhere to situation, be difficult for from the plastic rubber substrate surfacial spalling.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00100516 CN1243464C (en) | 2000-01-20 | 2000-01-20 | Method for forming electromagnetic wave interference shielding film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00100516 CN1243464C (en) | 2000-01-20 | 2000-01-20 | Method for forming electromagnetic wave interference shielding film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1306387A CN1306387A (en) | 2001-08-01 |
| CN1243464C true CN1243464C (en) | 2006-02-22 |
Family
ID=4575498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 00100516 Expired - Lifetime CN1243464C (en) | 2000-01-20 | 2000-01-20 | Method for forming electromagnetic wave interference shielding film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1243464C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4539844B2 (en) | 2004-04-15 | 2010-09-08 | セイコーエプソン株式会社 | Dielectric capacitor, method of manufacturing the same, and semiconductor device |
| KR101003317B1 (en) * | 2009-12-31 | 2010-12-23 | 최철수 | Electroconductive thin film for electromagnetic shielding using dry-wet fusion process |
| CN102465259A (en) * | 2010-11-11 | 2012-05-23 | 鸿富锦精密工业（深圳）有限公司 | Electromagnetic shielding treatment method for plastic surface and product thereof |
| CN102465254A (en) * | 2010-11-11 | 2012-05-23 | 鸿富锦精密工业（深圳）有限公司 | Electromagnetic shielding treatment method for plastic surface and product thereof |
| CN103096699A (en) * | 2011-10-31 | 2013-05-08 | 鸿富锦精密工业（深圳）有限公司 | Electromagnetic shielding method and product |
| CN109338363B (en) * | 2018-09-10 | 2021-07-30 | 深圳科诺桥科技股份有限公司 | Conductive Treatment Process of Surface of Insulating Layer Film |
-
2000
- 2000-01-20 CN CN 00100516 patent/CN1243464C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1306387A (en) | 2001-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Shanghai Chenzhe Optical & Electronic Technologies Co., Ltd. Assignor: Baiteng Science and Technology Co., Ltd. Contract record no.: 2010990000609 Denomination of invention: Method for generating electromagnetic wave interference shielding membrane Granted publication date: 20060222 License type: Exclusive License Open date: 20010801 Record date: 20100806 |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20060222 |