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TW374249B - TFT array and a method for manufacturing the same and a method for manufacturing liquid crystal display using the same - Google Patents

TFT array and a method for manufacturing the same and a method for manufacturing liquid crystal display using the same

Info

Publication number
TW374249B
TW374249B TW087108004A TW87108004A TW374249B TW 374249 B TW374249 B TW 374249B TW 087108004 A TW087108004 A TW 087108004A TW 87108004 A TW87108004 A TW 87108004A TW 374249 B TW374249 B TW 374249B
Authority
TW
Taiwan
Prior art keywords
same
electrode
wiring
manufacturing
insulated film
Prior art date
Application number
TW087108004A
Other languages
English (en)
Inventor
Kazuhiro Kobayashi
Nobuhiro Nakamura
Yukio Endo
Original Assignee
Mitsubishi Electric Corp
Advanced Display Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Advanced Display Kk filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW374249B publication Critical patent/TW374249B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
TW087108004A 1997-05-26 1998-05-22 TFT array and a method for manufacturing the same and a method for manufacturing liquid crystal display using the same TW374249B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13505797 1997-05-26
JP35292097 1997-12-22

Publications (1)

Publication Number Publication Date
TW374249B true TW374249B (en) 1999-11-11

Family

ID=26469001

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087108004A TW374249B (en) 1997-05-26 1998-05-22 TFT array and a method for manufacturing the same and a method for manufacturing liquid crystal display using the same

Country Status (3)

Country Link
US (2) US6310669B1 (zh)
KR (1) KR100289510B1 (zh)
TW (1) TW374249B (zh)

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US6429909B1 (en) * 1997-10-18 2002-08-06 Samsung Electronics Co., Ltd. Liquid crystal displays and manufacturing methods thereof
CN1479148A (zh) * 1998-11-26 2004-03-03 ������������ʽ���� 电光装置及其制造方法和电子装置
JP3362008B2 (ja) * 1999-02-23 2003-01-07 シャープ株式会社 液晶表示装置およびその製造方法
US7145536B1 (en) 1999-03-26 2006-12-05 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US6952194B1 (en) * 1999-03-31 2005-10-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
KR100628680B1 (ko) * 1999-12-17 2006-09-27 엘지.필립스 엘시디 주식회사 박막 트랜지스터 어레이 기판
KR100685296B1 (ko) * 1999-12-31 2007-02-22 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치용 어레이 기판의 제조방법
KR100489873B1 (ko) * 1999-12-31 2005-05-17 엘지.필립스 엘시디 주식회사 액정표시장치 및 그의 제조방법
KR100673331B1 (ko) * 2000-02-19 2007-01-23 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
KR100658978B1 (ko) * 2000-02-21 2006-12-18 엘지.필립스 엘시디 주식회사 엑스레이 디텍터용 어레이기판 제조방법
JP4414568B2 (ja) * 2000-07-24 2010-02-10 三菱電機株式会社 液晶表示装置のｔｆｔアレイ基板製造方法
TWI220029B (en) * 2000-10-12 2004-08-01 Au Optronics Corp Thin film transistor liquid crystal display and its manufacturing method
KR100796749B1 (ko) 2001-05-16 2008-01-22 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 어레이 기판
KR100795344B1 (ko) * 2001-05-29 2008-01-17 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이 기판 및 그의 제조방법
KR100878263B1 (ko) * 2001-06-13 2009-01-13 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
KR100917766B1 (ko) * 2002-12-31 2009-09-15 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR100491258B1 (ko) * 2002-12-31 2005-05-24 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치용 어레이기판과 그 제조방법
KR20050001707A (ko) * 2003-06-26 2005-01-07 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
KR101133751B1 (ko) * 2003-09-05 2012-04-09 삼성전자주식회사 박막 트랜지스터 표시판
US20050184392A1 (en) * 2004-02-23 2005-08-25 Kun-Hong Chen Method for fabricating interconnect and interconnect fabricated thereby
US7221413B2 (en) * 2004-08-05 2007-05-22 Au Optronics Corporation Thin film transistor array substrate and repairing method thereof
KR101073403B1 (ko) * 2004-09-09 2011-10-17 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR20060080392A (ko) * 2005-01-05 2006-07-10 삼성전자주식회사 박막트랜지스터 기판과 그 제조방법
KR101133758B1 (ko) * 2005-01-19 2012-04-09 삼성전자주식회사 센서 및 이를 구비한 박막 트랜지스터 표시판
ATE552032T1 (de) * 2005-07-14 2012-04-15 Lithera Inc Verbesserte lipolytikum-formulierung mit hinhaltender wirkstofffreigabe für die arealbehandlung von fettgewebe
JP2007317686A (ja) * 2006-05-23 2007-12-06 Seiko Epson Corp 光素子チップ、並びに、光モジュールおよびその製造方法
JP5170985B2 (ja) 2006-06-09 2013-03-27 株式会社ジャパンディスプレイイースト 液晶表示装置
JP5217558B2 (ja) * 2008-03-27 2013-06-19 三菱電機株式会社 薄膜トランジスタ基板
JP5236370B2 (ja) * 2008-07-10 2013-07-17 三菱電機株式会社 Ｔｆｔ基板の製造方法及びｔｆｔ基板
US8493540B2 (en) * 2008-12-15 2013-07-23 Samsung Display Co., Ltd. Display panel and method of manufacturing the same
KR101692954B1 (ko) * 2010-05-17 2017-01-05 삼성디스플레이 주식회사 유기 발광 디스플레이 장치 및 그 제조 방법
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105094488B (zh) * 2015-08-18 2018-10-23 京东方科技集团股份有限公司 触控显示面板及其制作方法、驱动方法和触控显示装置
JP2018018740A (ja) * 2016-07-29 2018-02-01 株式会社ジャパンディスプレイ 表示装置及び表示装置の製造方法
CN114497074A (zh) * 2020-10-23 2022-05-13 群创光电股份有限公司 修补结构与电子装置

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Also Published As

Publication number Publication date
KR19980087264A (ko) 1998-12-05
US6650378B2 (en) 2003-11-18
KR100289510B1 (ko) 2001-05-02
US6310669B1 (en) 2001-10-30
US20010019373A1 (en) 2001-09-06

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