TW351017B - Method of manufacturing of the structure forming DRAM capacitors - Google Patents

Abstract

A sort of method of manufacturing of the structure forming DRAM capacitors, including the following steps: provision of a transfer transistor having a gate and a source/drain zone and one conductor for isolation from the gate; settling a first conductor layer in the gate, onto said source/drain region and the conductor, in connection with the source/drain polarity and isolated from the gate and the conductor; settling an insulation layer on the first conductor layer for flattening for a flat insulation layer, in thickness to extend onto the first conductor layer on top of the gate; defining the flat insulation layer figure for forming an opening exposed onto the first conductor layer; forming a second conductor layer for stuffing the opening and coating onto the flat insulation layer; forming a screen to etch the second conductor layer, forming the second conductor figure with the edge on the flat insulation layer; removing the flat insulation layer from the second conductor figure edge; defining the first conductor layer figure; forming a dielectric layer for coating the exposed part in the first conductor layer and the second conductor layer; and forming an upper capacitor electrode.