TW326527B - Dynamic random access memory - Google Patents
Dynamic random access memoryInfo
- Publication number
- TW326527B TW326527B TW086107158A TW86107158A TW326527B TW 326527 B TW326527 B TW 326527B TW 086107158 A TW086107158 A TW 086107158A TW 86107158 A TW86107158 A TW 86107158A TW 326527 B TW326527 B TW 326527B
- Authority
- TW
- Taiwan
- Prior art keywords
- sense amplifier
- pull
- random access
- access memory
- dynamic random
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960025743A KR100203142B1 (ko) | 1996-06-29 | 1996-06-29 | 디램 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW326527B true TW326527B (en) | 1998-02-11 |
Family
ID=19464740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086107158A TW326527B (en) | 1996-06-29 | 1997-05-27 | Dynamic random access memory |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH1064267A (ja) |
| KR (1) | KR100203142B1 (ja) |
| GB (1) | GB2314951B (ja) |
| TW (1) | TW326527B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100298443B1 (ko) * | 1998-08-18 | 2001-08-07 | 김영환 | 센스앰프제어회로 |
| EP1619688A1 (en) | 2004-07-21 | 2006-01-25 | Dialog Semiconductor GmbH | Dynamical biasing of memory sense amplifiers |
| JP2006054017A (ja) | 2004-08-13 | 2006-02-23 | Micron Technology Inc | メモリディジット線のキャパシタ支持によるプレチャージ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4943944A (en) * | 1987-11-25 | 1990-07-24 | Kabushiki Kaisha Toshiba | Semiconductor memory using dynamic ram cells |
| JPH04258875A (ja) * | 1991-02-14 | 1992-09-14 | Sharp Corp | 半導体メモリ装置 |
| US5280452A (en) * | 1991-07-12 | 1994-01-18 | International Business Machines Corporation | Power saving semsing circuits for dynamic random access memory |
| KR950009234B1 (ko) * | 1992-02-19 | 1995-08-18 | 삼성전자주식회사 | 반도체 메모리장치의 비트라인 분리클럭 발생장치 |
-
1996
- 1996-06-29 KR KR1019960025743A patent/KR100203142B1/ko not_active IP Right Cessation
-
1997
- 1997-05-27 TW TW086107158A patent/TW326527B/zh not_active IP Right Cessation
- 1997-06-12 GB GB9712287A patent/GB2314951B/en not_active Expired - Fee Related
- 1997-06-16 JP JP9158855A patent/JPH1064267A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB9712287D0 (en) | 1997-08-13 |
| KR100203142B1 (ko) | 1999-06-15 |
| GB2314951B (en) | 2000-10-25 |
| GB2314951A (en) | 1998-01-14 |
| KR980004961A (ko) | 1998-03-30 |
| JPH1064267A (ja) | 1998-03-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |