294647 Μ Β7年泛月/〇、必 驗 五、發明説明（1 )294647 Μ B7 Pan-Month / O, Required V. Description of Invention (1)
Ml 經濟部中央標準局員工消費合作社印製 本發明偽有關於一種應用於積體電路裂程中之介電物 質的製造方法，持別是有關於一種硼《§矽玻璃的製造方法 〇 在積體電路的製程裡，氣化矽常被用來當作介電層、 保護層或雜質佈植時的罩幕|若在化學氣相沈積法沈積氣 化矽的反應過程中加入含棚氣體（如β2〇3、Β2Ηβ等）或含磷 氣體（如ΡΗ3),便可形成硼矽玻璃（BSG : BorosilicateGlass^ 碟δ夕玻璃（PSG : Phosphosi 1 icate Glass)，再施以退火處理 (Annealing)再流動（reflow)後成較平坦之表面，以做為複晶矽 和金屬層間介電層（PMD : Poly-Metal Interlevel Dielectrit Material)或 用在己鍍完金屬後防止刮傷和污染的保護層，.其再流動的 溫度（reflow temperature)約為10001。另外，尚有同時摻植棚和 碟之氣化砂，稱之為棚联砂玻璃（BPSG : Borophospho silicate Glass)，其具有較低之再流動溫度約為850C至900t之間，所 以，較常被用來做為複晶矽和金屬層間介電層或保護層。 但是，硼磷矽玻璃内含硼元素和磷完素，為避免這些 硼元素和磷元素對所覆蓋的區域形成再摻植的效應，通常 ，習知的方法偽於沈積硼磷矽玻璃之前，先以常壓化學氣 相沈積法WPCVD)或低壓化學氣相沈積法（LPCVD)沈積一層氣 化層做為缓衝層，此二種沈積法皆以Sih和〇2為反應氣體 .其反應化學式如下：Ml The Ministry of Economic Affairs, Central Bureau of Standards, Employee and Consumer Cooperatives printed the invention. This invention is about a method of manufacturing dielectric materials used in the cracking process of integrated circuits, and the other is about a boron "§ Manufacturing method of silicon glass. In integrated circuits In the production process, vaporized silicon is often used as a dielectric layer, a protective layer or a mask when implanting impurities. If the chemical vapor deposition method is used to deposit gaseous silicon during the reaction process, a greenhouse gas (such as β2 〇3, Β2Ηβ, etc.) or phosphorus-containing gas (such as PH3), can form borosilicate glass (BSG: BorosilicateGlass ^ disc δ evening glass (PSG: Phosphosi 1 icate Glass), and then apply annealing treatment (Annealing) and then flow ( reflow) into a flatter surface, used as a polycrystalline silicon and metal interlayer dielectric layer (PMD: Poly-Metal Interlevel Dielectrit Material) or as a protective layer to prevent scratches and contamination after the metal has been plated. The reflow temperature (reflow temperature) is about 10001. In addition, there is still gasification sand mixed with shed and dish, called shed-linked sand glass (BPSG: Borophospho silicate Glass), which has a lower reflow temperature It is between 850C and 900t, so it is often used as a dielectric layer or protective layer between polycrystalline silicon and metal. However, borophosphosilicate glass contains boron and phosphorus, to avoid these boron and Phosphorus element forms the effect of re-implantation on the covered area. Generally, the conventional method is pseudo-depositing borophosphosilicate glass by atmospheric pressure chemical vapor deposition (WPCVD) or low pressure chemical vapor deposition (LPCVD) Deposit a vaporized layer as a buffer layer. Both of these deposition methods use Sih and 〇2 as reaction gases. The reaction chemical formula is as follows:
SilU + 〇2 今 Si〇2 条 至於為何不使用電漿輔肋化學氣相沈槙法的原因，在 於若使用SilU和〇2為反應氣體，射頻電漿的沈橫方法會使 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1 n n i n n --- 〆衣-I ·1 I n —、1T (請先閲讀背面之注意事項再填寫本頁) ί 83109380號専利説明害修正頁 Α7 修正 Β /期： ΒΖ_i JYC\ '^g/ 五、發明説明（2 ) 1 得反應過於激烈，而易阻塞条統管線，若利用四乙ft基砂 甲院{TEOS : Tetraethoxysilane，Si(0C2He)4}為反應源，又因反應源 為掖態而需加裝其他設備方可形成氧化矽，所以，改以 SilU和NaO為反應氣讎，但是HaO反鼴後所殘留在氣化矽中的 5 氮元素，經再流動（ref low)退火處理畤，會輿PM0S元件之濃 佈植匾的硼元素反應结合，因而提高濃佈植匾的«阻值， 破鳆元件原有之特性，所以，雖然霣漿輔助化學氣相沈稹 法所沈積之氣化矽層具有較佳之均勻度（uniformity)，卻因氪 元素的殘留而須使用均勻度較差之APCVD或LPCVD。 10 有鑑於此，本發明之主要目的在提供一種礪磷矽玻鹰 的製造方法，一方面採用《漿輔助化學氣相沈積糸統可獲 致較佳的沈積均勻度，一方面又可避免氮元素殘留破壞 PM0S元件特性的缺黏。 本發明之主要目的可藉由一種明磷矽玻璃的製造方法 15 ，缠於在霣槳_助化學氣相沈稹条統内形成礪磷玻璃於一 霣子材料上，該«磷矽玻璃的製造方法包括：（a)於該霣漿 轜助化學氣相沈積糸統内，通入N20及SiH4為反應氣體，經 射頻瀲發反應形成富含矽元素之氣化矽暦於該霣子材料上 ;(b)於該霣漿賴助化學氣相沈積条統内，通入氫化硼、氫 20 化碟、Silk及NsO為反應氣黼，經射頻瀲發反應形成珊磷矽 玻璃於該氣化矽層上。 為讓本發明之上述目的、待徴、和優黏能更明顯易懂 ，下文待舉一較佳實施例，作詳細説明如下： -4 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印裝 A7 2U4647 B7____ 五、發明説明（3) 1 啻施例： 本發明之硼磷矽玻璃的製造方法，適用於已製作元件 之電子材料上，包括下列步驟： ω將電子材料置入電漿輔肋化學氣相沈積糸統内，通 5 入Sifk及ΝζΟ為反應氣體，經射頻激發電漿反應形成一氧化 矽層覆蓋電子材料上，此時SiJU對Νβ的流量比至少為0.3/4 ，使所形成之氣化矽層富含矽元素（Silicon-rich)，此步驟之 化學反應式為： XNaO + SiH4 -> SiOx +2H2 +XN2 10 (b)在同一電漿輔肋化學氣相沈積条統内，通入Β2Ηβ 、 ΡΗ3、他0及Sifk ，經射頻激發電漿反應形成一硼磷矽玻璃於 氣化矽層上，此硼磷矽玻璃含硼磷量由Β2Ηβ及PHa的流量來 控制。 藉由調整SiH4對化0之流董比大於0.3/4，便可形成富含 15 矽元素之氣化矽層，利用矽元素之未飽和鍵播取氮元素， 使得在隨後的高溫退火處理時，氮元素不易擴散至PM0S元 件之濃佈植區内與硼元素結合，再者，亦利用電漿輔肋化 學氣相沈積法形成均勻度較LPCVD和APCVD佳之氣化矽層。 雖然本發明已以一較佳實施例掲露如上，然其並非用 20 以限定本發明，任何熟習此項技藝者，在不脱離本發明之 精神和範圍内，當可作些許之更動與潤飾，因此本發明之 保護範圍當視後附之申請專利範圍所界定者為準。 -5 - 本紙張尺度適用中國國家橾準（CNS ) A4規格（210X297公釐） -------- ▲------II-----# (請先閱讀背面之注意事項再填寫本頁)SilU + 〇2 The current Si〇2 article is why the reason why the plasma auxiliary rib chemical vapor deposition method is not used is that if SilU and 〇2 are used as the reactive gas, the sinking method of RF plasma will make this paper standard applicable to China. Standard (CNS) A4 specification (210X297mm) 1 nninn --- 〆 衣 -I · 1 I n —, 1T (please read the precautions on the back before filling in this page) Β / Issue: ΒZ_i JYC \ '^ g / V. Description of the invention (2) 1 The reaction is too violent and it is easy to block the conventional pipelines. If you use the tetraethyl ft-based sand nail salon {TEOS: Tetraethoxysilane, Si (0C2He) 4 } Is the reaction source, and because the reaction source is in the tumble state, additional equipment needs to be installed to form silicon oxide, so SilU and NaO are used as the reaction gas, but HaO remains in the gasified silicon after reaction. Nitrogen, after reflow (ref low) annealing treatment, will be combined with the boron element of the densely planted plaque of the PM0S element, thus increasing the «resistance of the densely planted plaque, and breaking the original characteristics of the glutinous element. Therefore, Although the vaporized silicon layer deposited by the slurry-assisted chemical vapor deposition method It has better uniformity, but APCVD or LPCVD with poor uniformity must be used due to the residual of krypton element. 10 In view of this, the main purpose of the present invention is to provide a method for manufacturing a phosphorous silicon glass eagle. On the one hand, the use of "slurry-assisted chemical vapor deposition system can achieve better deposition uniformity, on the one hand, it can avoid nitrogen. There is a lack of stickiness that destroys the characteristics of the PM0S device. The main purpose of the present invention can be achieved by a method of manufacturing bright phosphorous silicate glass15, wrapped around a paddle-assisted chemical vapor deposition system to form polished phosphorous glass on a dipped material. The manufacturing method includes: (a) Into the slurry-assisted chemical vapor deposition system, N20 and SiH4 are introduced as the reaction gases, and a gasified silicon rich in silicon element is formed by the radio frequency burst reaction to the material Above; (b) In the system of chemical vapor deposition based on the help of bead, boron hydride, hydrogen hydride disc, Silk and NsO are reacted to form a phosphorous silicate glass in the gas On the silicon layer. In order to make the above-mentioned object, waiting and adhesion of the present invention more obvious and easy to understand, a preferred embodiment will be described below in detail as follows: -4-This paper scale is applicable to the Chinese National Standard (CNS) A4 specification ( 210 X297 mm) (Please read the precautions on the back before filling out this page) Order A7 2U4647 B7____ Printed by the Employees ’Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (3) 1 Example: The boron-phosphorus silicon of the present invention The manufacturing method of glass is suitable for the electronic materials of the fabricated components, including the following steps: ω Place the electronic materials into the plasma auxiliary rib chemical vapor deposition system, pass 5 into Sifk and ΝζΟ as the reaction gas, after RF excitation The power generation slurry reacts to form a silicon monoxide layer covering the electronic material. At this time, the flow ratio of SiJU to Νβ is at least 0.3 / 4, so that the formed vaporized silicon layer is rich in silicon (Silicon-rich). This step is a chemical reaction The formula is: XNaO + SiH4-> SiOx + 2H2 + XN2 10 (b) In the same plasma auxiliary rib chemical vapor deposition system, pass Β2Ηβ, PH3, other 0 and Sifk, formed by radio frequency excitation plasma reaction Borophosphosilicate glass The silicon layer, the boron phosphorous silicon glass is controlled by the amount of boron phosphate and Β2Ηβ flow of PHa. By adjusting the flow ratio of SiH4 to chemical 0 to be greater than 0.3 / 4, a vaporized silicon layer rich in 15 silicon elements can be formed. The unsaturated bonds of silicon elements are used to broadcast the nitrogen element, so that during the subsequent high temperature annealing treatment Nitrogen is not easy to diffuse into the densely planted area of the PMOS element to combine with boron. Furthermore, the plasma assisted rib chemical vapor deposition method is also used to form a vaporized silicon layer with better uniformity than LPCVD and APCVD. Although the present invention has been disclosed as above in a preferred embodiment, it is not limited to 20. Anyone who is familiar with this skill can make some changes without departing from the spirit and scope of the present invention. Retouching, therefore, the protection scope of the present invention shall be subject to the scope defined in the appended patent application. -5-This paper scale is applicable to China National Standard (CNS) A4 (210X297mm) -------- ▲ ------ II ----- # (Please read the notes on the back first (Fill in this page again)
經濟部中央橾隼局貝工消費合作社印IPrinted by the Shell Consumption Cooperative of the Central Falcon Bureau of the Ministry of Economic Affairs