TW287320B - - Google Patents

Info

Publication number: TW287320B
Authority: TW; Taiwan

Application number

TW084110352A

Original Assignee

Texas Instruments Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1995-03-21

Filing date

1995-10-04

Publication date

1996-10-01

1995-10-04 Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc

1996-10-01 Application granted granted Critical

1996-10-01 Publication of TW287320B publication Critical patent/TW287320B/zh

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/81—Threshold

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Read Only Memory (AREA)
For Increasing The Reliability Of Semiconductor Memories (AREA)
Static Random-Access Memory (AREA)

TW084110352A 1995-03-21 1995-10-04 TW287320B (zh)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US08/408,661 US5566110A (en)	1995-03-21	1995-03-21	Electrically erasable programmable read only memory and method of operation

Publications (1)

Publication Number	Publication Date
TW287320B true TW287320B (zh)	1996-10-01

Family

ID=23617204

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW084110352A TW287320B (zh)	1995-03-21	1995-10-04

Country Status (3)

Country	Link
US (1)	US5566110A (zh)
JP (1)	JPH08273377A (zh)
TW (1)	TW287320B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5721704A (en) *	1996-08-23	1998-02-24	Motorola, Inc.	Control gate driver circuit for a non-volatile memory and memory using same
US5745405A (en) *	1996-08-26	1998-04-28	Taiwan Semiconductor Manufacturing Company, Ltd	Process leakage evaluation and measurement method
US7707354B2 (en) *	1999-08-04	2010-04-27	Super Talent Electronics, Inc.	SRAM cache and flash micro-controller with differential packet interface
US6226200B1 (en)	1999-11-17	2001-05-01	Motorola Inc.	In-circuit memory array bit cell threshold voltage distribution measurement
US6307773B1 (en)	2000-07-28	2001-10-23	National Semiconductor Corporation	Non-volatile latch with program strength verification
IT1319037B1 (it) *	2000-10-27	2003-09-23	St Microelectronics Srl	Circuito di lettura di memorie non volatili
US7076376B1 (en) *	2004-12-28	2006-07-11	Hewlett-Packard Development Company, L.P.	System and method for calibrating weak write test mode (WWTM)
US7457173B2 (en) *	2005-05-18	2008-11-25	Texas Instruments Incorporated	Area efficient differential EEPROM cell with improved data retention and read/write endurance
KR100812520B1 (ko) *	2007-02-06	2008-03-11	매그나칩 반도체 유한회사	반도체 메모리 장치
US8422294B2 (en) *	2010-10-08	2013-04-16	Infineon Technologies Ag	Symmetric, differential nonvolatile memory cell

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4400799A (en) *	1981-09-08	1983-08-23	Intel Corporation	Non-volatile memory cell
JPS61117794A (ja) *	1984-11-13	1986-06-05	Fujitsu Ltd	不揮発性半導体記憶装置
US4979004A (en) *	1988-01-29	1990-12-18	Texas Instruments Incorporated	Floating gate memory cell and device
US4980859A (en) *	1989-04-07	1990-12-25	Xicor, Inc.	NOVRAM cell using two differential decouplable nonvolatile memory elements
US5045489A (en) *	1989-06-30	1991-09-03	Texas Instruments Incorporated	Method of making a high-speed 2-transistor cell for programmable/EEPROM devices with separate read and write transistors
US5053839A (en) *	1990-01-23	1991-10-01	Texas Instruments Incorporated	Floating gate memory cell and device
US5045490A (en) *	1990-01-23	1991-09-03	Texas Instruments Incorporated	Method of making a pleated floating gate trench EPROM

1995
- 1995-03-21 US US08/408,661 patent/US5566110A/en not_active Expired - Lifetime
- 1995-10-04 TW TW084110352A patent/TW287320B/zh not_active IP Right Cessation
1996
- 1996-03-19 JP JP6330496A patent/JPH08273377A/ja active Pending

Also Published As

Publication number	Publication date
JPH08273377A (ja)	1996-10-18
US5566110A (en)	1996-10-15

Publication	Publication Date	Title
DE69638352D1 (zh)	2011-05-19
DE69637714D1 (zh)	2008-11-27
BR122012014331A2 (zh)	1999-01-05
BRPI9612258B1 (zh)	2011-05-31
BRPI9612138B1 (zh)	2009-09-22
DK143195A (zh)	1997-05-04
CH0741373H1 (zh)	2011-10-14
DK0727898T3 (zh)	1997-03-17
BR7501503U (zh)	1997-11-25
BR7502120U (zh)	1998-04-14
DK126096A (zh)	1996-11-08
AU1627395A (zh)	1995-06-30
CN3032692S (zh)	1995-06-14
CN3034591S (zh)	1995-09-06
CN3030543S (zh)	1995-03-08
CN3031001S (zh)	1995-03-29
CN3031350S (zh)	1995-04-19
CN3031655S (zh)	1995-05-10
CN3031742S (zh)	1995-05-10
CN3031926S (zh)	1995-05-17
CN3032332S (zh)	1995-05-31
CN3032390S (zh)	1995-06-07
CN3032522S (zh)	1995-06-07
CN3032568S (zh)	1995-06-14
CN3030489S (zh)	1995-03-08

Legal Events

Date	Code	Title	Description
2013-07-01	MM4A	Annulment or lapse of patent due to non-payment of fees