TW278250B - Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor - Google Patents
Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitorInfo
- Publication number
- TW278250B TW278250B TW84112854A TW84112854A TW278250B TW 278250 B TW278250 B TW 278250B TW 84112854 A TW84112854 A TW 84112854A TW 84112854 A TW84112854 A TW 84112854A TW 278250 B TW278250 B TW 278250B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage gate
- gate oxide
- high voltage
- fabrication method
- polysilicon layer
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 6
- 229920005591 polysilicon Polymers 0.000 title abstract 6
- 239000003990 capacitor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
A fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor comprises the steps of: forming one high voltage gate oxide on one initialization processed semiconductor substrate which consists of one semiconductor substrate, one well formed in the semiconductor substrate, and multiple field oxide formed on the well; depositing one first polysilicon layer; forming multiple high voltage gate by define the high voltage gate pattern with mask, and removing the undefined portion of the first polysilicon layer; removing the high voltage gate oxide located outside the high voltage gate; forming one low voltage gate oxide; depositing one second polysilicon layer; forming multiple low voltage gate by defining the low voltage gate pattern by mask, and removing the undefined portion of the second polysilicon layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW84112854A TW278250B (en) | 1995-12-01 | 1995-12-01 | Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW84112854A TW278250B (en) | 1995-12-01 | 1995-12-01 | Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW278250B true TW278250B (en) | 1996-06-11 |
Family
ID=51397464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW84112854A TW278250B (en) | 1995-12-01 | 1995-12-01 | Fabrication method of gate oxide thickness varying with different voltage and polysilicon capacitor |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW278250B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2543266A1 (en) | 2011-07-07 | 2013-01-09 | Sin Young Hong Ltd. | Adjustable shaping brassiere |
-
1995
- 1995-12-01 TW TW84112854A patent/TW278250B/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2543266A1 (en) | 2011-07-07 | 2013-01-09 | Sin Young Hong Ltd. | Adjustable shaping brassiere |
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