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TW348285B - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
TW348285B
TW348285B TW085114846A TW85114846A TW348285B TW 348285 B TW348285 B TW 348285B TW 085114846 A TW085114846 A TW 085114846A TW 85114846 A TW85114846 A TW 85114846A TW 348285 B TW348285 B TW 348285B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
fabricating semiconductor
tungsten silicide
fabricating
carrying
Prior art date
Application number
TW085114846A
Other languages
Chinese (zh)
Inventor
Moom Hong-Bae
Ku Bon-Youl
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW348285B publication Critical patent/TW348285B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A method of fabricating a semiconductor device, which comprises the steps of depositing tungsten silicide, forming an oxide layer on the tungsten silicide, and carrying out subsequent processes.
TW085114846A 1996-06-27 1996-12-02 Method of fabricating semiconductor device TW348285B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960024616A KR100219416B1 (en) 1996-06-27 1996-06-27 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
TW348285B true TW348285B (en) 1998-12-21

Family

ID=19463951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085114846A TW348285B (en) 1996-06-27 1996-12-02 Method of fabricating semiconductor device

Country Status (3)

Country Link
JP (1) JP3121777B2 (en)
KR (1) KR100219416B1 (en)
TW (1) TW348285B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100482751B1 (en) 2002-12-27 2005-04-14 주식회사 하이닉스반도체 Method of manufacturing semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63227060A (en) * 1987-03-17 1988-09-21 Fujitsu Ltd Manufacturing method of semiconductor device
JPS6442175A (en) * 1987-08-07 1989-02-14 Fujitsu Ltd Manufacture of semiconductor device
JPH047826A (en) * 1990-04-25 1992-01-13 Fuji Xerox Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JP3121777B2 (en) 2001-01-09
KR980005556A (en) 1998-03-30
JPH1050704A (en) 1998-02-20
KR100219416B1 (en) 1999-09-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees