TW202440588A - Compound - Google Patents
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- TW202440588A TW202440588A TW112142299A TW112142299A TW202440588A TW 202440588 A TW202440588 A TW 202440588A TW 112142299 A TW112142299 A TW 112142299A TW 112142299 A TW112142299 A TW 112142299A TW 202440588 A TW202440588 A TW 202440588A
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Abstract
Description
本發明之實施例係關於受電子化合物,且更特定言之適用於在光響應裝置中用作受電子材料之化合物。Embodiments of the present invention relate to electron accepting compounds, and more particularly, to compounds used as electron accepting materials in photoresponsive devices.
有機光偵測器可含有在陽極與陰極之間的供電子材料與受電子材料之摻合物的光活性層。已知受電子材料包括富勒烯及非富勒烯受體(NFA)。Organic photodetectors may contain a photoactive layer of a mixture of electron donating and electron accepting materials between an anode and a cathode. Known electron accepting materials include fullerenes and non-fullerene acceptors (NFAs).
Yang等人,「End-capped group manipulation of indacenodithienothiophene-based non-fullerene small molecule acceptors for efficient organic solar cells 」 Nanoscale, 2020, 12, 17795-17804揭示用於太陽能電池之具有一系列稠環端基的非富勒烯受體ITIC。 Yang et al., "End-capped group manipulation of indacenodithienothiophene-based non-fullerene small molecule acceptors for efficient organic solar cells " , Nanoscale , 2020, 12, 17795-17804, discloses non-fullerene acceptor ITICs with a series of condensed ring end groups for solar cells.
Wang等人, 「Enhancement of intra- and inter-molecular π-conjugated effects for a non-fullerene acceptor to achieve high-efficiency organic solar cells with an extended photoresponse range and optimized morphology 」, Mater. Chem. Front., 2018, 2, 2006-2012揭示用於太陽能電池之A-D-A型非富勒烯電子受體,其具有藉由2,5-二氟苯環與2-(3-側氧基-2,3-二氫-1 H-環戊[ b]萘-1-亞基)丙二腈之兩個環戊二噻吩部分及兩個受電子(A)端基連接而構造的供電子(D)核心。 Wang et al., " Enhancement of intra- and inter-molecular π-conjugated effects for a non-fullerene acceptor to achieve high-efficiency organic solar cells with an extended photoresponse range and optimized morphology " , Mater. Chem. Front., 2018, 2, 2006-2012 disclose an ADA-type non-fullerene electron acceptor for solar cells, which has an electron donating (D) core constructed by connecting a 2,5-difluorobenzene ring with two cyclopentadithiophene moieties of 2-(3-oxo-2,3-dihydro- 1H -cyclopenta[ b ]naphthalen-1-ylidene)malononitrile and two electron accepting (A) end groups.
Swick等人,「Fluorinating π-Extended Molecular Acceptors Yields Highly Connected Crystal Structures and Low Reorganization Energies for Efficient Solar Cells 」揭示用於太陽能電池之化合物ITN-F4及ITzN-F4: Swick et al., "Fluorinating π-Extended Molecular Acceptors Yields Highly Connected Crystal Structures and Low Reorganization Energies for Efficient Solar Cells " discloses the compounds ITN-F4 and ITzN-F4 for use in solar cells:
Wu等人,「New Electron Acceptor with End-Extended Conjugation for High-Performance Polymer Solar Cells 」, Energy Fuels2021, 35, 23, 19061-19068揭示用於太陽能電池之化合物IDTT8-N: Wu et al., "New Electron Acceptor with End-Extended Conjugation for High-Performance Polymer Solar Cells " , Energy Fuels 2021, 35, 23, 19061-19068, discloses the compound IDTT8-N for solar cells:
Li等人,「Systematic Merging of Nonfullerene Acceptor π-Extension and Tetrafluorination Strategies Affords Polymer Solar Cells with >16% Efficiency 」揭示用於太陽能電池之非富勒烯受體BT-BIC、LIC、L4F及BO-L4F: Li et al., "Systematic Merging of Nonfullerene Acceptor π-Extension and Tetrafluorination Strategies Affords Polymer Solar Cells with >16% Efficiency " discloses nonfullerene acceptors BT-BIC, LIC, L4F and BO-L4F for solar cells:
本發明提供一種式(I)或(II)之化合物: A 1- (B 1)x 1- (D 1)y 1- (B 1)x 2- A 1(I) A 1- (B 2)x 5- (D 2)y 2- (B 3)x 3- A 2- (B 3)x 4- (D 3)y 3- (B 2)x 6- A 1(II) 其中: A 2為二價雜芳族受電子基團; D 1、D 2及D 3在各次出現時獨立地為供電子基團; B 1、B 2及B 3在各次出現時獨立地為橋接基團; x 1至x 6各自獨立地為0、1、2或3; y 1至y 3各自獨立地為至少1; A 1在各次出現時獨立地為式(III)之基團, (III) 其中: 各R 1獨立地為取代基; R 2為H或取代基; 各R 3獨立地為H或取代基; J為C=O、C=S、NR 11或CR 12R 13,其中R 11為CN或COOR 40,且R 40為H或取代基且R 12及R 13各自獨立地為CN、CF 3或COOR 40;及 各Z 1為N且各Z 2為CR 4,或各Z 1為CR 4且各Z 2為N,其中各R 4獨立地為H或取代基。 The present invention provides a compound of formula (I) or (II): A 1 - (B 1 )x 1 - (D 1 )y 1 - (B 1 )x 2 - A 1 (I) A 1 - (B 2 )x 5 - (D 2 )y 2 - (B 3 )x 3 - A 2 - (B 3 )x 4 - (D 3 )y 3 - (B 2 )x 6 - A 1 (II) wherein: A 2 is a divalent heteroaromatic electron accepting group; D 1 , D 2 and D 3 are independently electron donating groups at each occurrence; B 1 , B 2 and B 3 are independently bridging groups at each occurrence; x 1 to x 6 are independently 0, 1, 2 or 3; y 1 to y 3 are independently at least 1; A 1 is independently at each occurrence a group of formula (III), (III) wherein: each R 1 is independently a substituent; R 2 is H or a substituent; each R 3 is independently H or a substituent; J is C=O, C=S, NR 11 or CR 12 R 13 , wherein R 11 is CN or COOR 40 , and R 40 is H or a substituent and R 12 and R 13 are each independently CN, CF 3 or COOR 40 ; and each Z 1 is N and each Z 2 is CR 4 , or each Z 1 is CR 4 and each Z 2 is N, wherein each R 4 is independently H or a substituent.
視情況,各R 1獨立地選自CN、CF 3及COOR 40,其中R 40在各次出現時為H或取代基。R 40較佳為H或C 1 - 20烴基。 Optionally, each R 1 is independently selected from CN, CF 3 and COOR 40 , wherein R 40 at each occurrence is H or a substituent. R 40 is preferably H or a C 1-20 alkyl group.
視情況,各R 3為拉電子基團。 Optionally, each R 3 is an electron withdrawing group.
視情況,該拉電子基團選自Cl、F、CN、C 1 - 12氟烷基及COOR 15,其中R 15為C 1 - 20烴基。 Optionally, the electron-withdrawing group is selected from Cl, F , CN , C 1-12 fluoroalkyl and COOR 15 , wherein R 15 is C 1-20 alkyl.
視情況,各R 4獨立地選自H或拉電子基團。 Optionally, each R 4 is independently selected from H or an electron withdrawing group.
本發明提供一種組合物,其包含供電子材料及受電子材料,其中該受電子材料為如前述技術方案中任一項之化合物。The present invention provides a composition comprising an electron-donating material and an electron-accepting material, wherein the electron-accepting material is a compound as described in any one of the above technical solutions.
本發明提供一種有機電子裝置,其包含有包含本文所描述之化合物或組合物的活性層。The present invention provides an organic electronic device comprising an active layer comprising the compound or composition described herein.
視情況,該有機電子裝置為一種有機光響應裝置,該有機光響應裝置包含安置於陽極與陰極之間的本體異質接面層,且其中該本體異質接面層包含本文所描述之組合物。Optionally, the organic electronic device is an organic photo-responsive device comprising a bulk heterojunction layer disposed between an anode and a cathode, and wherein the bulk heterojunction layer comprises the composition described herein.
視情況,該有機光響應裝置為有機光偵測器。Optionally, the organic light responsive device is an organic light detector.
本發明提供一種光感測器,其包含光源及本文所描述之有機光偵測器,其中該光感測器經組態以偵測自該光源發射之光。The present invention provides a photo sensor comprising a light source and an organic photodetector as described herein, wherein the photo sensor is configured to detect light emitted from the light source.
視情況,該光源發射具有大於900 nm之峰值波長的光。Optionally, the light source emits light having a peak wavelength greater than 900 nm.
本發明提供一種調配物,其包含溶解或分散於一種或多種溶劑中之本文所描述之化合物或組合物。The present invention provides a formulation comprising a compound or composition described herein dissolved or dispersed in one or more solvents.
本發明提供一種形成本文所描述之有機電子裝置的方法,其中該活性層之形成包含將本文所描述之調配物沉積至表面上及使一種或多種溶劑蒸發。The present invention provides a method of forming an organic electronic device as described herein, wherein the formation of the active layer comprises depositing a formulation as described herein onto a surface and evaporating one or more solvents.
除非上下文另有明確要求,否則在整個說明書及申請專利範圍中,字組「包含(comprise)」、「包含(comprising)」及其類似者將以包容性意義,而非排他性或窮盡性意義解釋;換言之,以「包括但不限於」之意義解釋。另外,當用於本申請案中時,詞「本文中」、「上文」、「下文」及類似意義之詞係指本申請案整體而非本申請案之任何特定部分。在上下文准許之情況下,上述具體實施方式中使用單數或複數之詞亦可分別包括複數或單數。參考兩個或更多個項目之清單的詞「或」涵蓋該詞之所有以下解譯:清單中之項目中之任一者、清單中之所有項目及清單中之項目的任何組合。當用於本申請案中時,對一層「在」另一層「上方」之提及意謂該等層可直接接觸或可存在一個或多個介入層。當用於本申請案中時,對一層「在」另一層「上」之提及意謂該等層直接接觸。除非另外特定陳述,否則對特定原子之提及包括彼原子之任何同位素。Unless the context clearly requires otherwise, throughout the specification and claims, the words "comprise," "comprising," and the like are to be interpreted in an inclusive sense, and not in an exclusive or exhaustive sense; in other words, in the sense of "including, but not limited to." In addition, when used in this application, the words "herein," "above," "below," and words of similar import refer to this application as a whole and not to any particular part of this application. Where the context permits, words used in the above specific embodiments in the singular or plural may also include the plural or singular, respectively. The word "or" referring to a list of two or more items includes all of the following interpretations of the word: any one of the items in the list, all of the items in the list, and any combination of the items in the list. When used in this application, reference to a layer being "on" another layer means that the layers may be in direct contact or one or more intervening layers may be present. When used in this application, reference to a layer being "on" another layer means that the layers are in direct contact. Unless specifically stated otherwise, reference to a particular atom includes any isotope of that atom.
本文中所提供之技術之教示可以應用於其他系統,不必為下文所描述之系統。下文所描述之各種實例之要素及動作可以經組合以提供技術之其他實施方式。技術之一些替代實施方式可不僅將額外要素包括於上文所提及的彼等實施方式,而且可包括更少的要素。The teachings of the technology provided herein can be applied to other systems, not necessarily the system described below. The elements and actions of the various examples described below can be combined to provide other implementations of the technology. Some alternative implementations of the technology may include not only additional elements to those implementations mentioned above, but may also include fewer elements.
可根據以下詳細描述對技術進行此等及其他變化。雖然本說明書描述技術之某些實例,且描述所設想之最佳模式,但無論本說明書如何詳細地呈現,可以許多方式來實踐該技術。如上文所提及,在描述技術之某些特徵或範疇時,所使用之特定術語不應理解為暗示該術語在本文中重新定義為限於彼術語所相關聯的技術之任何具體特性、特徵或範疇。一般而言,除非具體實施方式章節明確定義此類術語,否則以下申請專利範圍中所使用之術語不應解釋為將該技術限於本說明書中所揭示之具體實例。因此,技術之實際範疇不僅涵蓋所揭示之實例,而且涵蓋根據申請專利範圍來實施或執行該技術的所有等效方式。These and other variations can be made to the technology in light of the detailed description below. Although this specification describes certain examples of the technology, and describes the best mode contemplated, no matter how detailed this specification presents, the technology can be practiced in many ways. As mentioned above, when describing certain features or scopes of the technology, the use of specific terms should not be understood to imply that the term is redefined herein to be limited to any specific characteristics, features, or scope of the technology with which the term is associated. In general, unless the specific implementation section explicitly defines such terms, the terms used in the following application scope should not be interpreted as limiting the technology to the specific examples disclosed in this specification. Therefore, the actual scope of the technology covers not only the examples disclosed, but also all equivalent ways of implementing or performing the technology according to the scope of the claims.
為減少申請專利範圍之數目,下文以某些申請專利範圍形式呈現技術之某些範疇,但本申請人以任何數目個申請專利範圍形式設想技術之各種範疇。In order to reduce the number of patent claims, certain areas of the technology are presented below in certain patent claim forms, but the applicant contemplates various areas of the technology in any number of patent claim forms.
在以下描述中,出於解釋之目的,闡述眾多特定細節以便提供對所揭示技術之實施方式之透徹理解。然而,熟習此項技術者將顯而易見,可在無此等特定細節中之一些的情況下實踐所揭示技術之實施例。In the following description, for the purpose of explanation, numerous specific details are set forth in order to provide a thorough understanding of the implementation of the disclosed technology. However, it will be apparent to those skilled in the art that the embodiments of the disclosed technology can be practiced without some of these specific details.
式(I)及(II)化合物為 A 1- (B 1)x 1- (D 1)y 1- (B 1)x 2- A 1(I) A 1- (B 2)x 5- (D 2)y 2- (B 3)x 3- A 2- (B 3)x 4- (D 3)y 3- (B 2)x 6- A 1(II) A 1為單價受電子基團。 A 2為二價雜芳族受電子基團。 D 1、D 2及D 3在各次出現時獨立地為供電子基團。 B 1、B 2及B 3在各次出現時獨立地為橋接基團。 x 1至x 6各自獨立地為0、1、2或3,較佳為0或1。 x 1及x 2較佳相同且較佳均為0或均為1。 x 3及x 4較佳相同且較佳均為0或均為1,更佳均為0。 x 5及x 6較佳相同且較佳均為0或均為1。 y 1、y 2及y 3各自獨立地為至少1,較佳1、2或3。y 2及y 3較佳相同。 The compounds of formula (I) and (II) are A 1 - (B 1 )x 1 - (D 1 )y 1 - (B 1 )x 2 - A 1 (I) A 1 - (B 2 )x 5 - (D 2 )y 2 - (B 3 )x 3 - A 2 - (B 3 )x 4 - (D 3 )y 3 - (B 2 )x 6 - A 1 (II) A 1 is a monovalent electron accepting group. A 2 is a divalent heteroaromatic electron accepting group. D 1 , D 2 and D 3 are independently electron donating groups at each occurrence. B 1 , B 2 and B 3 are independently bridging groups at each occurrence. x 1 to x 6 are each independently 0, 1, 2 or 3, preferably 0 or 1. x1 and x2 are preferably the same and are preferably both 0 or both 1. x3 and x4 are preferably the same and are preferably both 0 or both 1, more preferably both 0. x5 and x6 are preferably the same and are preferably both 0 or both 1. y1 , y2 and y3 are each independently at least 1, preferably 1, 2 or 3. y2 and y3 are preferably the same.
受電子基團A 1、A 2及A 3中之各者具有比式(I)之化合物的供電子基團D 1、D 2或D 3中之任一者的LUMO深(亦即,距真空更遠)、較佳深至少1 eV之最低未佔用分子軌域(LUMO)能階。受電子基團及供電子基團之LUMO能階可依藉由對此等基團之LUMO能階進行建模來測定,其中鍵結至相鄰基團之各鍵經鍵結至氫原子之鍵置換。可使用獲自Gaussian的Gaussian09軟體、使用具有B3LYP(泛函)及LACVP*(基底函數組)的Gaussian09進行模型化。 Each of the electron accepting groups A 1 , A 2 and A 3 has a lowest unoccupied molecular orbital (LUMO) energy level that is deeper (i.e., further from vacuum) than the LUMO of any of the electron donating groups D 1 , D 2 or D 3 of the compound of formula (I), preferably at least 1 eV deeper. The LUMO energy levels of the electron accepting and electron donating groups can be determined by modeling the LUMO energy levels of these groups, wherein each bond to a neighboring group is replaced by a bond to a hydrogen atom. Modeling can be performed using Gaussian09 software obtained from Gaussian, using Gaussian09 with B3LYP (functional) and LACVP* (basis function set).
A 1在各次出現時獨立地為式(III)之基團 (III) 各R 1獨立地為取代基。較佳地,各R 1獨立地選自CN;C 1 - 6氟烷基,較佳CF 3;及COOR 40,其中R 40在各次出現時為H或取代基,較佳為H或C 1 - 20烴基。 A1 is independently at each occurrence a group of formula (III) (III) Each R 1 is independently a substituent. Preferably, each R 1 is independently selected from CN; C 1-6 fluoroalkyl , preferably CF 3 ; and COOR 40 , wherein R 40 at each occurrence is H or a substituent, preferably H or C 1-20 alkyl.
本文所描述之C 1 - 20烴基可選自苯基,其可未經取代或經一個或多個選自C 1 - 12烷基及直鏈、分支鏈或環狀C 1 - 20烷基之取代基取代。 The C 1-20 alkyl group described herein may be selected from phenyl groups, which may be unsubstituted or substituted with one or more substituents selected from C 1-12 alkyl groups and linear, branched or cyclic C 1-20 alkyl groups.
R 2為H或取代基。較佳地,R 2為H、F、Cl、CN、NO 2、C 1 - 16烷基或C 1 - 16烷氧基,其中C 1 - 16烷基或C 1 - 16烷氧基之一個或多個H原子可經F置換。 R 2 is H or a substituent. Preferably, R 2 is H, F, Cl, CN, NO 2 , C 1 - 16 alkyl or C 1 - 16 alkoxy, wherein one or more H atoms of the C 1 - 16 alkyl or C 1 - 16 alkoxy may be replaced by F.
各R 3獨立地為H或取代基,較佳為拉電子基團。較佳拉電子基團為F、Cl、CN、C 1 - 12氟烷基及COOR 15,其中R 15為C 1 - 20烴基。 Each R 3 is independently H or a substituent, preferably an electron withdrawing group. Preferred electron withdrawing groups are F, Cl, CN, C 1 - 12 fluoroalkyl and COOR 15 , wherein R 15 is C 1 - 20 alkyl.
J為C=O、C=S、NR 11或CR 12R 13,其中R 11、R 12及R 13如上文所描述。J較佳為C=O。 J is C=O, C=S, NR 11 or CR 12 R 13 , wherein R 11 , R 12 and R 13 are as described above. J is preferably C=O.
(i)各Z 1為N且各Z 2為CR 4,或(b)各Z 1為CR 4及各Z 2為N,其中各R 4獨立地為H或取代基,較佳為H或拉電子基團。拉電子基團R 4較佳選自關於R 3所描述之拉電子基團。 (i) each Z 1 is N and each Z 2 is CR 4 , or (b) each Z 1 is CR 4 and each Z 2 is N, wherein each R 4 is independently H or a substituent, preferably H or an electron withdrawing group. The electron withdrawing group R 4 is preferably selected from the electron withdrawing groups described for R 3 .
較佳地,式(III)之基團具有式(IIIa): Preferably, the group of formula (III) has formula (IIIa):
例示性式(III)基團包括(但不限於): Exemplary groups of formula (III) include (but are not limited to):
在一些實施例中,式(I)或(III)之化合物的吸收峰大於900 nm,視情況大於1100 nm,視情況大於1250 nm。吸收峰適當地小於1500 nm。In some embodiments, the absorption peak of the compound of formula (I) or (III) is greater than 900 nm, optionally greater than 1100 nm, optionally greater than 1250 nm. The absorption peak is suitably less than 1500 nm.
本發明人已出人意料地發現,具有式(III)之基團A 1之式(I)或式(II)化合物可具有較低暗電流。 The present inventors have surprisingly found that compounds of formula (I) or formula (II) having a group A1 of formula (III) can have a lower dark current.
受體單元 A 2 A 2較佳為包含至少2個稠環、較佳至少3個稠環之稠合雜芳族基。 The acceptor unit A 2 A 2 is preferably a fused heteroaromatic group containing at least 2 fused rings, more preferably at least 3 fused rings.
在一些實施例中,式(II)之A 2為式(VIII)之基團: (VIII) 其中: Ar 1為芳族或雜芳族基團;且 Y為O、S、NR 6或R 7-C=C-R 7,其中R 7在各次出現時獨立地為H或取代基,其中兩個取代基R 7可經連接以形成單環或多環;且R 6為H或取代基。 In some embodiments, A2 of formula (II) is a group of formula (VIII): (VIII) wherein: Ar 1 is an aromatic or heteroaromatic group; and Y is O, S, NR 6 or R 7 -C=CR 7 , wherein R 7 at each occurrence is independently H or a substituent, wherein two substituents R 7 may be linked to form a monocyclic or polycyclic ring; and R 6 is H or a substituent.
在A 2為式(VIII)之基團的情況下,Ar 1可為未經取代或經一個或多個R 9基團取代之單環或多環雜芳族基,其中R 9在各次出現時獨立地為取代基。 When A 2 is a group of formula (VIII), Ar 1 may be a monocyclic or polycyclic heteroaromatic group which is unsubstituted or substituted with one or more R 9 groups, wherein R 9 is independently a substituent at each occurrence.
較佳R 9基團係選自 F; CN; NO 2; C 1 - 20烷基,其中一個或多個非相鄰C原子可經O、S、NR 17置換,其中R 17為C 1 - 12烴基、COO或CO,且烷基之一個或多個H原子可經F置換; 芳族基或雜芳族基,較佳苯基,其未經取代或經一個或多個取代基取代;及 選自以下之基團 或 其中Z 40、Z 41、Z 42及Z 43各自獨立地為CR 13或N,其中R 13在各次出現時為H或取代基,較佳為C 1 - 20烴基;Y 40及Y 41各自獨立地為O、S、NX 71,其中X 71為CN或COOR 40;或CX 60X 61,其中X 60及X 61獨立地為CN、CF 3或COOR 40;W 40及W 41各自獨立地為O、S、NX 71或CX 60X 61,其中X 60及X 61獨立地為CN、CF 3或COOR 40;且R 40在各次出現時為H或取代基,較佳H或C 1 - 20烴基。芳族或雜芳族基團R 9之例示性取代基為F、CN、NO 2及C 1 - 12烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、COO或CO置換,且烷基之一個或多個H原子可經F置換。 Preferably, the R 9 group is selected from F; CN; NO 2 ; C 1-20 alkyl, wherein one or more non- adjacent C atoms may be replaced by O, S, NR 17 , wherein R 17 is C 1-12 alkyl, COO or CO, and one or more H atoms of the alkyl may be replaced by F; aromatic or heteroaromatic groups, preferably phenyl, which is unsubstituted or substituted by one or more substituents; and groups selected from the following or wherein Z 40 , Z 41 , Z 42 and Z 43 are each independently CR 13 or N, wherein R 13 at each occurrence is H or a substituent, preferably a C 1-20 alkyl group; Y 40 and Y 41 are each independently O, S, NX 71 , wherein X 71 is CN or COOR 40 ; or CX 60 X 61 , wherein X 60 and X 61 are independently CN, CF 3 or COOR 40 ; W 40 and W 41 are each independently O, S, NX 71 or CX 60 X 61 , wherein X 60 and X 61 are independently CN, CF 3 or COOR 40 ; and R 40 at each occurrence is H or a substituent, preferably H or a C 1-20 alkyl group . Exemplary substituents for the aromatic or heteroaromatic group R 9 are F, CN, NO 2 and C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 7 , COO or CO, and one or more H atoms of the alkyl group may be replaced by F.
本文任何地方所描述之R 17可為例如C 1 - 12烷基、未經取代之苯基或經一個或多個C 1 - 6烷基取代之苯基。 R 17 described anywhere herein may be, for example , C 1-12 alkyl , unsubstituted phenyl, or phenyl substituted with one or more C 1-6 alkyl groups.
若依本文任何地方所描述之烷基的C原子經另一原子或基團置換,則經置換之C原子可為烷基之末端C原子或非末端C原子。If a C atom of an alkyl group as described anywhere herein is replaced by another atom or group, the replaced C atom may be a terminal C atom or a non-terminal C atom of the alkyl group.
藉由本文任何地方所使用之烷基的「非末端C原子」意謂除了n烷基鏈末端處之甲基的C原子或在支鏈烷基鏈末端處之甲基的C原子以外之C原子。By "non-terminal C atom" of an alkyl group as used anywhere herein is meant a C atom other than the C atom of a methyl group at the terminal end of an n-alkyl chain or the C atom of a methyl group at the terminal end of a branched alkyl chain.
若本文任何地方所描述之基團的末端C原子經置換,則隨後所得基團可為包含抗衡陽離子(例如銨或金屬抗衡陽離子,較佳銨或鹼金屬陽離子)之陰離子基團。If a terminal C atom of a group described anywhere herein is replaced, the resulting group may be a cationic group comprising a counter cation, such as an ammonium or metal counter cation, preferably an ammonium or alkali metal cation.
本文任何地方所描述,經另一原子或基團置換的烷基取代基之C原子較佳為非末端C原子,且所得取代基較佳為非離子性的。Where described anywhere herein, a C atom of an alkyl substituent which is replaced by another atom or group is preferably a non-terminal C atom, and the resulting substituent is preferably non-ionic.
例示性單環雜芳族基團Ar 1為未經取代或經一個或多個取代基取代之 二唑、噻二唑、三唑及1,4-二 。噻二唑尤其較佳的。 Exemplary monocyclic heteroaromatic groups Ar 1 are unsubstituted or substituted with one or more substituents. oxadiazole, thiadiazole, triazole and 1,4-diazole Thiadiazoles are particularly preferred.
例示性多環雜芳族基團Ar 1為式(V)之基團: (V) Exemplary polycyclic heteroaromatic groups Ar 1 are groups of formula (V): (V)
X 1及X 2各自獨立地選自N及CR 10,其中R 10為H或取代基,視情況為H或上文所描述之取代基R 9。 X1 and X2 are each independently selected from N and CR10 , wherein R10 is H or a substituent, optionally H or a substituent R9 described above.
X 3、X 4、X 5及X 6各自獨立地選自N及CR 10,其限制條件為X 3、X 4、X 5及X 6中之至少一者為CR 10。 X 3 , X 4 , X 5 and X 6 are each independently selected from N and CR 10 , with the proviso that at least one of X 3 , X 4 , X 5 and X 6 is CR 10 .
Z係選自O、S、SO 2、NR 6、PR 6、C(R 10) 2、Si(R 10) 2、C=O、C=S且C=C(R 5) 2,其中R 10為上文所描述;R 6為H或取代基;且R 5在各次出現時為拉電子基團。 Z is selected from O, S, SO2 , NR6 , PR6 , C( R10 ) 2 , Si( R10 ) 2 , C=O, C=S and C=C( R5 ) 2 , wherein R10 is as described above; R6 is H or a substituent; and R5 at each occurrence is an electron withdrawing group.
視情況,任何本文任何地方所描述之NR 6或PR 6中之各R 6獨立地選自H;C 1 - 20烷基,其中除與N或P結合之C原子外的一個或多個不相鄰的C原子可經O、S、NR 7、COO或CO置換,且烷基之一個或多個H原子可經F置換;及苯基,其未經取代或經一個或多個取代基,視情況為一個或多個C 1 - 12烷基取代,其中烷基之一個或多個不相鄰的C原子可經O、S、NR 7、COO或CO置換且烷基之一個或多個H原子可經F置換。 Optionally, each R 6 in any NR 6 or PR 6 described anywhere herein is independently selected from H; C 1-20 alkyl, wherein one or more non-adjacent C atoms other than the C atom bound to N or P may be replaced by O, S, NR 7 , COO or CO, and one or more H atoms of the alkyl may be replaced by F; and phenyl, which is unsubstituted or substituted with one or more substituents, optionally one or more C 1-12 alkyl, wherein one or more non-adjacent C atoms of the alkyl may be replaced by O, S, NR 7 , COO or CO, and one or more H atoms of the alkyl may be replaced by F.
較佳地,各R 5為CN、COOR 40;或CX 60X 61,其中X 60及X 61獨立地為CN、CF 3或COOR 40,且R 40在各次出現時為H或取代基,較佳為H或C 1 - 20烴基。 Preferably, each R 5 is CN, COOR 40 ; or CX 60 X 61 , wherein X 60 and X 61 are independently CN, CF 3 or COOR 40 , and R 40 at each occurrence is H or a substituent, preferably H or a C 1-20 alkyl group.
式(VIII)之基團A 2係較佳地選自式(VIIIa)及(VIIIb)之基團: (VIIIa) (VIIIb) The group A2 of formula (VIII) is preferably selected from the groups of formula (VIIIa) and (VIIIb): (VIIIa) (VIIIb)
對於式(VIIIb)之化合物,兩個R 7基團可能連接或可能不連接。 For the compound of formula (VIIIb), the two R 7 groups may or may not be linked.
較佳地,當兩個R 7基團未連接時,各R 7獨立地選自H;F;CN;NO 2;C 1 - 20烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、CO、COO、NR 6、PR 6或Si(R 10) 2置換,其中R 10及R 6上文所描述且一個或多個H原子可經F置換;及芳基或雜芳基,較佳苯基,其可未經取代或經一個或多個取代基取代。芳基或雜芳基之取代基可選自以下中之一者或多者:F;CN;NO 2;及C 1 - 20烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、CO、COO置換,且一個或多個H原子可經F置換。 Preferably, when two R7 groups are not linked, each R7 is independently selected from H; F ; CN; NO2 ; C1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR7 , CO, COO, NR6 , PR6 or Si( R10 ) 2 , wherein R10 and R6 are described above and one or more H atoms may be replaced by F; and aryl or heteroaryl, preferably phenyl, which may be unsubstituted or substituted by one or more substituents. The substituents of the aryl or heteroaryl group may be selected from one or more of the following: F; CN; NO 2 ; and C 1-20 alkyl , wherein one or more non-adjacent C atoms may be replaced by O, S, NR 7 , CO, COO, and one or more H atoms may be replaced by F.
較佳地,當兩個R 7基團連接時,式(VIIIb)之基團具有式(VIIIb-1)或(VIIIb-2): (VIIIb-1) (VIIIb-2) Preferably, when two R7 groups are linked, the group of formula (VIIIb) has formula (VIIIb-1) or (VIIIb-2): (VIIIb-1) (VIIIb-2)
Ar 2為芳族或雜芳族基團,較佳為苯,其未經取代或經一個或多個取代基取代。Ar 2可未經取代或經一個或多個上文所描述之取代基R 2取代。 Ar 2 is an aromatic or heteroaromatic group, preferably benzene, which is unsubstituted or substituted by one or more substituents. Ar 2 may be unsubstituted or substituted by one or more substituents R 2 described above.
X係選自O、S、SO 2、NR 6、PR 6、C(R 10) 2、Si(R 10) 2、C=O、C=S且C=C(R 5) 2,其中R 10、R 6及R 5依上文所描述。 X is selected from O, S, SO 2 , NR 6 , PR 6 , C(R 10 ) 2 , Si(R 10 ) 2 , C═O, C═S and C═C(R 5 ) 2 , wherein R 10 , R 6 and R 5 are as described above.
式(VIII)之例示性受電子基團包括但不限於:
除式(VIII)以外之二價受電子基團A
2係視情況選自式(IVa)-(IVj)
Y A1為O或S,較佳為S。 Y A1 is O or S, preferably S.
R 23在各次出現時為取代基,視情況為C 1 - 12烷基,其中除與Z 3連接之C原子外的一個或多個不相鄰的C原子可經O、S、NR 6、COO或CO置換,且烷基之一個或多個H原子可經F置換。 R 23 at each occurrence is a substituent, optionally C 1-12 alkyl, wherein one or more non-adjacent C atoms other than the C atom to which Z 3 is attached may be replaced by O, S, NR 6 , COO or CO , and one or more H atoms of the alkyl group may be replaced by F.
R 25在各次出現時獨立地為H;F;CN;NO 2;C 1 - 12烷基,其中一個或多個不相鄰的C原子可經O、S、NR 6、COO或CO置換且烷基之一個或多個H原子可經F置換;芳族基團,視情況為苯基,其未經取代或經一個或多個選自F及C 1 - 12烷基之取代基取代,其中一個或多個不相鄰的C原子可經O、S、NR 6、COO或CO置換;或 或 其中Z 40、Z 41、Z 42及Z 43各自獨立地為CR 13或N,其中R 13在各次出現時為H或取代基,較佳為C 1 - 20烴基; Y 40及Y 41各自獨立地為O、S、NX 71,其中X 71為CN或COOR 40;或CX 60X 61,其中X 60及X 61獨立地為CN、CF 3或COOR 40; W 40及W 41各自獨立地為O、S、NX 71,其中X 71為CN或COOR 40;或CX 60X 61,其中X 60及X 61獨立地為CN、CF 3或COOR 40;且 R 40在各次出現時為H或取代基,較佳為H或C 1 - 20烴基。 R 25 is independently at each occurrence H; F; CN ; NO 2 ; C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO and one or more H atoms of the alkyl may be replaced by F; an aromatic group, optionally phenyl, which is unsubstituted or substituted by one or more substituents selected from F and C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO ; or or wherein Z 40 , Z 41 , Z 42 and Z 43 are each independently CR 13 or N, wherein R 13 at each occurrence is H or a substituent, preferably a C 1-20 alkyl group; Y 40 and Y 41 are each independently O, S, NX 71 , wherein X 71 is CN or COOR 40 ; or CX 60 X 61 , wherein X 60 and X 61 are each independently CN, CF 3 or COOR 40 ; W 40 and W 41 are each independently O, S, NX 71 , wherein X 71 is CN or COOR 40 ; or CX 60 X 61 , wherein X 60 and X 61 are each independently CN, CF 3 or COOR 40 ; and R 40 at each occurrence is H or a substituent, preferably H or a C 1-20 alkyl group .
Z 3為N或P。 Z 3 is N or P.
T 1、T 2及T 3各自獨立地表示可稠合至一個或多個其他環之芳基或雜芳基環,視情況為苯。當存在時,T 1、T 2及T 3之取代基視情況選自R 25之非H基團。在一較佳實施例中,T 3為苯并噻二唑。 T1 , T2 and T3 each independently represent an aryl or heteroaryl ring which may be fused to one or more other rings, optionally benzene. When present, substituents for T1 , T2 and T3 are optionally selected from non-H groups of R25 . In a preferred embodiment, T3 is benzothiadiazole.
R 12在各次出現時為取代基,較佳為C 1 - 20烴基。 R 12 at each occurrence is a substituent, preferably a C 1-20 alkyl group.
Ar 5為伸芳基或伸雜芳基,視情況為噻吩、茀或伸苯基,其可未經取代或經一個或多個取代基,視情況選自R 25之一個或多個非H基團取代。 Ar 5 is arylene or heteroarylene, optionally thiophene, fluorene or phenylene, which may be unsubstituted or substituted with one or more substituents, optionally one or more non-H groups selected from R 25 .
橋接單元橋接單元B 1、B 2及B 3係較佳地各自選自伸乙烯基、伸芳基、伸雜芳基、伸芳基伸乙烯基及伸雜芳基伸乙烯基,其中伸芳基及伸雜芳基為單環或雙環基團,其中之各者可未經取代或經一個或多個取代基取代。 Bridging Units The bridging units B1 , B2 and B3 are preferably each selected from vinylene, arylene, heteroarylene, arylene vinylene and heteroarylene vinylene, wherein the arylene and heteroarylene are monocyclic or bicyclic groups, each of which may be unsubstituted or substituted with one or more substituents.
視情況,B
1、B
2及B
3係選自式(VIa)-(VIn)之單元:
R 8較佳為H、C 1 - 20烷基或C 1 - 19烷氧基。 R8 is preferably H , C1-20 alkyl or C1-19 alkoxy .
供電子基團 D 1 、 D 2 及 D 3 供電子基團較佳為稠合芳族或雜芳族基團,更佳為含有三個或更多個環之稠合雜芳族基團。尤其較佳供電子基團包含稠合噻吩或呋喃環,視情況含有噻吩或呋喃環及選自以下之一個或多個環的稠合環:苯、環戊二烯、四氫哌喃、四氫硫代哌喃及哌啶環,該等環中之各者未經取代或經一個或多個取代基取代。 The electron donating groups D1 , D2 and D3 are preferably fused aromatic or heteroaromatic groups, more preferably fused heteroaromatic groups containing three or more rings. Particularly preferred electron donating groups include fused thiophene or furan rings, optionally fused rings containing a thiophene or furan ring and one or more rings selected from the following: benzene, cyclopentadiene, tetrahydropyran, tetrahydrothiopyran and piperidine rings, each of which is unsubstituted or substituted with one or more substituents.
例示性供電子基團D
1、D
2及D
3包括式(VIIa)-(VIIp)之基團:
視情況,R 51及R 52在各次出現時獨立地選自H;F;C 1 - 20烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、COO或CO置換且烷基之一個或多個H原子可經F置換;芳族或雜芳族基團Ar 3,其未經取代或經一個或多個取代基取代。 Optionally, R 51 and R 52 are independently selected at each occurrence from H; F; C 1-20 alkyl, wherein one or more non - adjacent C atoms may be replaced by O, S, NR 7 , COO or CO and one or more H atoms of the alkyl may be replaced by F; an aromatic or heteroaromatic group Ar 3 which is unsubstituted or substituted by one or more substituents.
在一些實施例中,Ar 3可為芳族基團,例如苯基。 In some embodiments, Ar 3 can be an aromatic group, such as a phenyl group.
Ar 4係較佳選自視情況經取代之 二唑、噻二唑、三唑及1,4-二 。在Ar 4為1,4-二 之情況下,1,4-二 可與另一雜環基、視情況選自視情況經取代之 二唑、噻二唑、三唑、1,4-二 及丁二醯亞胺之基團稠合。 Ar 4 is the better choice and has been replaced according to the situation oxadiazole, thiadiazole, triazole and 1,4-diazole . In the case of Ar 4 being 1,4-di In this case, 1,4- Can be replaced with another heterocyclic group, or with another heterocyclic group as appropriate. oxadiazole, thiadiazole, triazole, 1,4-diazole And the group of succinimide is condensed.
若存在,則Ar 3之一個或多個取代基可選自C 1 - 12烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、COO或CO置換且烷基之一個或多個H原子可經F置換。 If present, one or more substituents of Ar 3 may be selected from C 1-12 alkyl, wherein one or more non - adjacent C atoms may be replaced by O, S, NR 7 , COO or CO and one or more H atoms of the alkyl may be replaced by F.
較佳地,各R 54選自由以下組成之群: H; F; 直鏈、分支鏈或環狀C 1 - 20烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、CO或COO置換,其中R 17為C 1 - 12烴基,且C 1 - 20烷基之一個或多個H原子可經F置換;及 Preferably, each R 54 is selected from the group consisting of: H; F; a linear, branched or cyclic C 1-20 alkyl group, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 7 , CO or COO, wherein R 17 is a C 1-12 alkyl group, and one or more H atoms of the C 1-20 alkyl group may be replaced by F ; and
式(Ak)u-(Ar 7)v之基團,其中Ak為C 1 - 20伸烷基鏈,其中一個或多個不相鄰的C原子可經O、S、NR 7、CO或COO置換;u為0或1;Ar 7在各次出現時獨立地為芳族或雜芳族基團,其未經取代或經一個或多個取代基取代;且v為至少1,視情況為1、2或3。 A group of formula (Ak)u-( Ar 7 )v, wherein Ak is a C 1-20 alkylene chain, wherein one or more non - adjacent C atoms may be replaced by O, S, NR 7 , CO or COO; u is 0 or 1; Ar 7 is independently, at each occurrence, an aromatic or heteroaromatic group, which is unsubstituted or substituted by one or more substituents; and v is at least 1, and optionally 1, 2 or 3.
Ar 7(若存在)之取代基較佳選自F;Cl;NO 2;CN;及C 1 - 20烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、CO或COO置換,且一個或多個H原子可經F置換。較佳地,Ar 7為苯基。 The substituents of Ar 7 (if present) are preferably selected from F; Cl ; NO 2 ; CN; and C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 7 , CO or COO, and one or more H atoms may be replaced by F. Preferably, Ar 7 is phenyl.
較佳地,各R 51為H。 Preferably, each R 51 is H.
視情況,R 53在各次出現時獨立地選自C 1 - 20烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、COO或CO置換且烷基之一個或多個H原子可經F置換;苯基,其未經取代或經一個或多個取代基,視情況為一個或多個C 1 - 12烷基取代,其中一個或多個不相鄰的C原子可經O、S、NR 7、COO或CO置換,且烷基之一個或多個H原子可經F置換。 Optionally, R 53 is independently selected at each occurrence from C 1-20 alkyl, wherein one or more non - adjacent C atoms may be replaced by O, S, NR 7 , COO or CO and one or more H atoms of the alkyl may be replaced by F; phenyl, which is unsubstituted or substituted with one or more substituents, optionally one or more C 1-12 alkyl , wherein one or more non-adjacent C atoms may be replaced by O, S, NR 7 , COO or CO and one or more H atoms of the alkyl may be replaced by F.
較佳地,本文任何地方所描述之R 55係H或C 1 - 30烴基。 Preferably, R55 as described anywhere herein is H or C1-30 alkyl.
在一較佳實施例中,D
1、D
2及D
3各自獨立地為式(VIIa)之基團。例示性式(VIIa)之基團包括(但不限於):
在一些實施例中,式(I)之y 1為1。 In some embodiments, y1 in formula (I) is 1.
在一些實施例中,式(II)之y 2及y 3各自為1。 In some embodiments, y2 and y3 of formula (II) are each 1.
在一些實施例中,式(I)之y 1或式(II)之y 2及y 3中之至少一者大於1。在此等實施例中,D 1、D 2或D 3基團之鏈分別可以任何定向連接。舉例而言,在D 1為式(VIIa)之基團且y 1為2之情況下,-[D 1] y1-可選自以下中之任一者: In some embodiments, at least one of y1 of formula (I) or y2 and y3 of formula (II ) is greater than 1. In these embodiments, the chains of the D1 , D2 or D3 groups can be connected in any orientation. For example, when D1 is a group of formula (VIIa) and y1 is 2, -[ D1 ] y1- can be selected from any of the following:
例示性式(I)之化合物包括(但不限於): Exemplary compounds of formula (I) include (but are not limited to):
供電子材料本文所描述之本體異質接面層包含供電子材料及本文所描述之式(I)之化合物。 Electron Donating Materials The bulk heterojunction layers described herein comprise an electron donating material and a compound of formula (I) described herein.
例示性供體材料揭示於例如WO2013/051676中,該文獻之內容以引用之方式併入本文中。Exemplary donor materials are disclosed, for example, in WO2013/051676, the contents of which are incorporated herein by reference.
供電子材料可為非聚合或聚合材料。The electron donating material can be a non-polymeric or polymeric material.
在一較佳實施例中,供電子材料為有機共軛聚合物,其可為均聚物或共聚物,包括交替、無規或嵌段共聚物。共軛聚合物較佳為包含交替之供電子重複單元及受電子重複單元之供體-受體聚合物。In a preferred embodiment, the electron donating material is an organic conjugate polymer, which can be a homopolymer or a copolymer, including alternating, random or block copolymers. The conjugate polymer is preferably a donor-acceptor polymer comprising alternating electron donating repeating units and electron accepting repeating units.
較佳為非結晶或半結晶共軛有機聚合物。Preferably, it is a non-crystalline or semi-crystalline conjugate organic polymer.
另外較佳地,供電子聚合物為具有通常在2.5 eV與1.5 eV之間、較佳在2.3 eV與1.8 eV之間的帶隙之共軛有機聚合物。Also preferably, the electron donating polymer is a conjugated organic polymer having a band gap generally between 2.5 eV and 1.5 eV, preferably between 2.3 eV and 1.8 eV.
視情況,供電子聚合物具有距真空能階不超過5.5 eV之HOMO能階。視情況,供電子聚合物具有距真空能階至少4.1 eV之HOMO能階。作為例示性供電子聚合物,可提及選自共軛烴或雜環聚合物的聚合物,包括聚并苯、聚苯胺、聚甘菊環、聚苯并呋喃、聚茀、聚呋喃、聚茚茀、聚吲哚、聚苯、聚吡唑啉、聚芘、聚噠 、聚吡啶、聚三芳基胺、聚(伸苯基乙烯)、聚(3-取代噻吩)、聚(3,4-雙取代噻吩)、聚硒吩、聚(3-取代硒吩)、聚(3,4-雙取代硒吩)、聚(二噻吩)、聚(三噻吩)、聚(二硒吩)、聚(三硒吩)、聚噻吩并[2,3-b]噻吩、聚噻吩并[3,2-b]噻吩、聚苯并噻吩、聚苯并[1,2-b:4,5-b']二噻吩、聚異苯并噻吩、聚(單取代吡咯)、聚(3,4-雙取代吡咯)、聚-1,3,4- 二唑、聚異苯并噻吩,其衍生物及共聚物。 Optionally, the electron donating polymer has a HOMO energy level of no more than 5.5 eV from the vacuum energy level. Optionally, the electron donating polymer has a HOMO energy level of at least 4.1 eV from the vacuum energy level. As exemplary electron donating polymers, there can be mentioned polymers selected from conjugated hydrocarbon or heterocyclic polymers, including polyacene, polyaniline, polyazulene, polybenzofuran, polyfluorene, polyfuran, polyindole, polyphenylene, polypyrazoline, polypyrene, polyhedral ... , polypyridine, polytriarylamine, poly(phenylene vinylene), poly(3-substituted thiophene), poly(3,4-bissubstituted thiophene), polyselenophene, poly(3-substituted selenophene), poly(3,4-bissubstituted selenophene), poly(dithiophene), poly(terthiophene), poly(diselenophene), poly(triselenophene), polythieno[2,3-b]thiophene, polythieno[3,2-b]thiophene, polybenzothiophene, polybenzo[1,2-b:4,5-b']dithiophene, polyisobenzothiophene, poly(monosubstituted pyrrole), poly(3,4-bissubstituted pyrrole), poly-1,3,4- Oxadiazole, polyisobenzothiophene, their derivatives and copolymers.
供體聚合物之較佳實例為聚茀及聚噻吩之共聚物,其中之各者可經取代;及包含基於苯并噻二唑及基於噻吩之重複單元的聚合物,其中之各者可經取代。Preferred examples of the donor polymer are copolymers of polyfluorene and polythiophene, each of which may be substituted; and polymers comprising benzothiadiazole-based and thiophene-based repeating units, each of which may be substituted.
尤其較佳供體聚合物包含作為聚合物之重複單元提供的供體單元(VIIa),以及最佳聚合物具有受電子重複單元,例如依本文所描述之作為聚合重複單元提供的二價受電子單元A 1。 Particularly preferred donor polymers comprise donor units (VIIa) provided as repeating units of the polymer, and most preferred polymers have electron accepting repeating units, such as divalent electron accepting units A1 as described herein provided as polymerized repeating units.
另一尤其較佳供體聚合物包含式(X)之重複單元: (X) 其中R 18及R 19各自獨立地選自H;F;C 1 - 12烷基,其中一個或多個不相鄰的、非末端C原子可經O、S、COO或CO置換,且烷基之一個或多個H原子可經F置換;或芳族基或雜芳族基Ar 6,其未經取代或經一個或多個選自F及C 1 - 12烷基之取代基取代,其中一個或多個非相鄰、非末端C原子可經O、S、COO或CO置換。 Another particularly preferred donor polymer comprises repeating units of formula (X): (X) wherein R 18 and R 19 are each independently selected from H; F; C 1-12 alkyl , wherein one or more non-adjacent, non-terminal C atoms may be replaced by O, S, COO or CO, and one or more H atoms of the alkyl may be replaced by F; or an aromatic or heteroaromatic group Ar 6 which is unsubstituted or substituted with one or more substituents selected from F and C 1-12 alkyl, wherein one or more non-adjacent, non-terminal C atoms may be replaced by O, S, COO or CO.
供體聚合物較佳為包含供體重複單元,例如式(VIIa)或(X)之重複單元及受體重複單元之供體受體(DA)共聚物。The donor polymer is preferably a donor-acceptor (DA) copolymer comprising a donor repeat unit, such as a repeat unit of formula (VIIa) or (X), and an acceptor repeat unit.
有機電子裝置式(I)或(II)之化合物可作為有機電子裝置之活性層提供。在一較佳實施例中,有機光響應裝置,更佳有機光偵測器之本體異質接面層包含本文所描述之組合物。 Organic Electronic Devices The compound of formula (I) or (II) can be provided as an active layer of an organic electronic device. In a preferred embodiment, the bulk heterojunction layer of an organic photoresponsive device, more preferably an organic photodetector, comprises the composition described herein.
本體異質接面層包含以下或由以下組成:供電子材料及本文所描述之受電子式(I)或式(II)化合物。The bulk heterojunction layer comprises or consists of an electron donating material and an electron accepting compound of formula (I) or formula (II) described herein.
在一些實施例中,本體異質接面層含有兩種或更多種接受材料及/或兩種或更多種受電子材料。In some embodiments, the bulk heterojunction layer contains two or more accepting materials and/or two or more electron accepting materials.
在一些實施例中,供電子材料之重量比受電子材料之重量為約1:0.5至約1:2,較佳為約1:1.1至約1:2。In some embodiments, the weight ratio of the electron donating material to the electron accepting material is about 1:0.5 to about 1:2, preferably about 1:1.1 to about 1:2.
較佳地,供電子材料與受電子材料具有II型界面,亦即供電子材料具有比受電子材料之相對應HOMO及LUMO能階更淺之HOMO及LUMO。較佳地,式(I)或(II)之化合物具有比供電子材料之HOMO深至少0.05 eV,視情況深至少0.10 eV的HOMO能階。Preferably, the electron donating material and the electron accepting material have a type II interface, that is, the electron donating material has a HOMO and a LUMO that are shallower than the corresponding HOMO and LUMO energy levels of the electron accepting material. Preferably, the compound of formula (I) or (II) has a HOMO energy level that is at least 0.05 eV deeper than the HOMO of the electron donating material, and optionally at least 0.10 eV deeper.
視情況,供電子材料之HOMO能階與式(I)或(II)之受電子化合物的LUMO能階之間的間隙小於1.4 eV。Optionally, the gap between the HOMO energy level of the electron donating material and the LUMO energy level of the electron accepting compound of formula (I) or (II) is less than 1.4 eV.
除非另外陳述,否則依本文所描述之材料之HOMO及LUMO能階係由方波伏安法(SWV)所量測。Unless otherwise stated, the HOMO and LUMO energy levels of the materials described herein were measured by square wave voltammetry (SWV).
圖1繪示根據本發明之一些實施例的有機光響應裝置。有機光響應裝置包含陰極103、陽極107及安置於陽極與陰極之間的本體異質接面層105。有機光響應裝置可支撐於基板101上,視情況支撐於玻璃或塑膠基板上。FIG1 shows an organic light responsive device according to some embodiments of the present invention. The organic light responsive device comprises a cathode 103, an anode 107 and a bulk heterojunction layer 105 disposed between the anode and the cathode. The organic light responsive device can be supported on a substrate 101, which can be a glass or plastic substrate.
陽極及陰極中之各者可獨立地為單個導電層,或可包含複數個層。Each of the anode and the cathode may independently be a single conductive layer, or may include a plurality of layers.
陽極及陰極中之至少一者為透明的,使得入射於裝置上之光可達至本體異質接面層。在一些實施例中,陽極及陰極兩者皆為透明的。透明電極之透射率可根據與有機光偵測器一起使用之光源的發射波長來選擇。At least one of the anode and cathode is transparent so that light incident on the device can reach the bulk heterojunction layer. In some embodiments, both the anode and cathode are transparent. The transmittance of the transparent electrode can be selected based on the emission wavelength of the light source used with the organic photodetector.
圖1繪示其中陰極安置於基板與陽極之間的配置。在其他實施例中,陽極可安置於陰極與基板之間。Figure 1 shows a configuration in which the cathode is disposed between the substrate and the anode. In other embodiments, the anode may be disposed between the cathode and the substrate.
有機光響應裝置可包含除圖1中所示之陽極、陰極及本體異質接面層以外的層。在一些實施例中,電洞傳輸層安置於陽極與本體異質接面層之間。在一些實施例中,電子傳輸層安置於陰極與本體異質接面層之間。在一些實施例中,功函數改質層安置於本體異質接面層與陽極之間及/或本體異質接面層與陰極之間。The organic photoresistor device may include layers other than the anode, cathode, and bulk heterojunction layer shown in FIG1 . In some embodiments, the hole transport layer is disposed between the anode and the bulk heterojunction layer. In some embodiments, the electron transport layer is disposed between the cathode and the bulk heterojunction layer. In some embodiments, the work function modification layer is disposed between the bulk heterojunction layer and the anode and/or between the bulk heterojunction layer and the cathode.
OPD之面積可小於約3 cm 2、小於約2 cm 2、小於約1 cm 2、小於約0.75 cm 2、小於約0.5 cm 2或小於約0.25 cm 2。視情況,各OPD可為OPD陣列之一部分,其中各OPD為具有依本文所描述之面積,視情況小於1 mm 2,視情況在0.5微米 2至900微米 2之範圍內的面積之陣列的像素。 The area of the OPD may be less than about 3 cm2 , less than about 2 cm2 , less than about 1 cm2 , less than about 0.75 cm2 , less than about 0.5 cm2 , or less than about 0.25 cm2 . Optionally, each OPD may be part of an array of OPDs, wherein each OPD is a pixel of the array having an area as described herein, optionally less than 1 mm2 , optionally in the range of 0.5 microns2 to 900 microns2 .
基板可為(但不限於)玻璃或塑膠基板。基板可為無機半導體。在一些實施例中,基板可為矽。舉例而言,基板可為矽晶圓。在使用時,若入射光透射穿過基板且電極由基板支撐,則基板為透明的。The substrate may be, but is not limited to, a glass or plastic substrate. The substrate may be an inorganic semiconductor. In some embodiments, the substrate may be silicon. For example, the substrate may be a silicon wafer. In use, if incident light is transmitted through the substrate and the electrode is supported by the substrate, then the substrate is transparent.
本體異質接面層含有本文所描述之式(I)或式(II)之化合物及供電子化合物。本體異質接面層可由此等材料組成或可包含一種或多種其他材料,例如一種或多種其他供電子材料及/或一種或多種其他受電子化合物。The bulk heterojunction layer contains a compound of formula (I) or formula (II) described herein and an electron donating compound. The bulk heterojunction layer may be composed of these materials or may include one or more other materials, such as one or more other electron donating materials and/or one or more other electron accepting compounds.
富勒烯在一些實施例中,式(I)或式(II)之化合物為本文所描述之本體異質接面層的唯一受電子材料。 Fullerenes In some embodiments, the compound of formula (I) or formula (II) is the only electron-accepting material of the bulk heterojunction layer described herein.
在一些實施例中,本體異質接面層含有式(I)或(II)之化合物及一種或多種其他受電子材料。較佳其他受電子材料為富勒烯。本發明人已出人意料地發現,式(I)或(II)之化合物與富勒烯之組合可在極少或無暗電流增加之情況下增強OPD之外部量子效率。In some embodiments, the bulk heterojunction layer contains a compound of formula (I) or (II) and one or more other electron accepting materials. Preferably, the other electron accepting material is fullerene. The inventors have surprisingly found that the combination of a compound of formula (I) or (II) and fullerene can enhance the external quantum efficiency of the OPD with little or no increase in dark current.
式(I)或(II)之化合物:富勒烯受體重量比率可在約1:0.1至1:1範圍內,較佳在約1:0.1至1:0.5範圍內。富勒烯可選自但不限於C 60、C 70、C 76、C 78及C 84富勒烯或其衍生物,包括但不限於PCBM型富勒烯衍生物(包括苯基-C 61-丁酸甲酯(C 60PCBM))、TCBM型富勒烯衍生物(例如甲苯基-C 61-丁酸甲酯(C 60TCBM))及ThCBM型富勒烯衍生物(例如噻吩基-C 61-丁酸甲酯(C 60ThCBM))。 The weight ratio of the compound of formula (I) or (II):fullerene acceptor may be in the range of about 1:0.1 to 1:1, preferably in the range of about 1:0.1 to 1:0.5. The fullerene may be selected from, but not limited to, C 60 , C 70 , C 76 , C 78 and C 84 fullerenes or derivatives thereof, including but not limited to PCBM-type fullerene derivatives (including phenyl-C 61 -butyric acid methyl ester (C 60 PCBM)), TCBM-type fullerene derivatives (such as tolyl-C 61 -butyric acid methyl ester (C 60 TCBM)) and ThCBM-type fullerene derivatives (such as thienyl-C 61 -butyric acid methyl ester (C 60 ThCBM)).
富勒烯衍生物可具有式(V): (V) 其中A與富勒烯之C-C基團一起形成可未取代或經一個或多個取代基取代之單環或稠環基團。 The fullerene derivative may have formula (V): (V) wherein A together with the CC group of the fullerene forms a monocyclic or condensed ring group which may be unsubstituted or substituted with one or more substituents.
例示性富勒烯衍生物包括式(Va)、(Vb)及(Vc):
取代基R 20至R 32視情況且在各次出現時獨立地選自由以下組成之群:芳基或雜芳基,視情況為苯基,其可未經取代或經一個或多個取代基取代;及C 1 - 20烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、CO或COO置換,且一個或多個H原子可經F置換。 The substituents R 20 to R 32 are optionally and independently selected at each occurrence from the group consisting of: aryl or heteroaryl, optionally phenyl, which may be unsubstituted or substituted with one or more substituents; and C 1-20 alkyl, wherein one or more non - adjacent C atoms may be replaced by O , S, NR 7 , CO or COO, and one or more H atoms may be replaced by F.
芳基或雜芳基之取代基(當存在時)視情況選自C 1 - 12烷基,其中一個或多個不相鄰的C原子可經O、S、NR 7、CO或COO置換且一個或多個H原子可經F置換。 Substituents of the aryl or heteroaryl groups (when present) are optionally selected from C 1-12 alkyl groups, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 7 , CO or COO and one or more H atoms may be replaced by F.
調配物本體異質接面層可藉由包括但不限於熱蒸發及溶液沉積法之任何製程來形成。 The bulk heterojunction layer may be formed by any process including but not limited to thermal evaporation and solution deposition.
較佳地,本體異質接面層藉由沉積調配物來形成,該調配物包含供電子材料、受電子材料及溶解或分散於溶劑或兩種或更多種溶劑之混合物中的本體異質接面層之任何其他組分。調配物可藉由包括但不限於以下之任何塗佈或印刷方法來沉積:旋塗、浸塗、滾塗、噴塗、刮刀塗佈、線棒塗佈、狹縫塗佈、噴墨印刷、網板印刷、凹版印刷及柔性凸版印刷。Preferably, the bulk heterojunction layer is formed by depositing a formulation comprising an electron donating material, an electron accepting material, and any other components of the bulk heterojunction layer dissolved or dispersed in a solvent or a mixture of two or more solvents. The formulation can be deposited by any coating or printing method including but not limited to spin coating, dip coating, roll coating, spray coating, doctor blade coating, wire rod coating, slit coating, inkjet printing, screen printing, gravure printing, and flexographic printing.
調配物之一種或多種溶劑可視情況包含苯或萘或由苯或萘組成,該苯或萘經選自氟、氯、C 1 - 10烷基及C 1 - 10烷氧基之一個或多個取代基取代,其中兩個或更多個取代基可連接形成環,該環可未經取代或經一個或多個C 1 - 6烷基,視情況甲苯、二甲苯、三甲基苯、四甲基苯、苯甲醚、茚烷及其經烷基取代之衍生物、以及四氫萘及其經烷基取代之衍生物取代。 One or more solvents of the formulation may optionally comprise or consist of benzene or naphthalene substituted with one or more substituents selected from fluorine, chlorine, C1-10 alkyl and C1-10 alkoxy , wherein two or more substituents may be linked to form a ring, which may be unsubstituted or substituted with one or more C1-6 alkyl , optionally toluene, xylene, trimethylbenzene, tetramethylbenzene, anisole , indane and alkyl-substituted derivatives thereof, and tetrahydronaphthalene and alkyl-substituted derivatives thereof.
調配物可包含兩種或更多種溶劑之混合物,較佳為包含至少一種經一個或多個上文所描述之取代基取代之苯及一種或多種其他溶劑的混合物。一種或多種其他溶劑可選自酯,視情況為烷基或芳基羧酸之烷基酯或芳基酯,視情況為苯甲酸C 1 - 10烷基酯、苯甲酸苯甲酯或二甲氧基苯。在較佳實施例中,三甲苯與苯甲酸苯甲酯之混合物用作溶劑。在其他較佳實施例中,三甲苯與二甲氧基苯之混合物用作溶劑。 The formulation may comprise a mixture of two or more solvents, preferably a mixture comprising at least one benzene substituted with one or more of the substituents described above and one or more other solvents. The one or more other solvents may be selected from esters, optionally alkyl or aryl esters of alkyl or aryl carboxylic acids, optionally C 1-10 alkyl benzoates, benzyl benzoate or dimethoxybenzene. In a preferred embodiment, a mixture of trimethylbenzene and benzyl benzoate is used as a solvent. In other preferred embodiments, a mixture of trimethylbenzene and dimethoxybenzene is used as a solvent.
調配物可包含除受電子材料、供電子材料及一種或多種溶劑之外的其他組分。作為此類組分之實例,可提及黏著劑、消泡劑、除氣劑、黏度增強劑、稀釋劑、助劑、流動改良劑、著色劑、染料或顏料、敏化劑、穩定劑、奈米粒子、表面活性化合物、潤滑劑、濕潤劑、分散劑及抑制劑。The formulation may contain other components in addition to the electron accepting material, the electron donating material and the one or more solvents. As examples of such components, there may be mentioned adhesives, defoamers, deaerators, viscosity enhancers, diluents, adjuvants, flow improvers, colorants, dyes or pigments, sensitizers, stabilizers, nanoparticles, surface active compounds, lubricants, wetting agents, dispersants and inhibitors.
應用電路可包含連接至電壓源之OPD,以供將反向偏壓施加至裝置及/或經組態以量測光電流之裝置。施加至光偵測器之電壓可為可變的。在一些實施例中,光偵測器在使用時可連續偏壓。 The application circuit may include an OPD connected to a voltage source for applying a reverse bias to the device and/or a device configured to measure photocurrent. The voltage applied to the photodetector may be variable. In some embodiments, the photodetector may be continuously biased when in use.
在一些實施例中,光偵測器系統包含本文所描述之複數個光偵測器,諸如相機之影像感測器。In some embodiments, a photodetector system includes a plurality of photodetectors as described herein, such as an image sensor of a camera.
在一些實施例中,感測器可包含本文所描述之OPD及光源,其中該OPD經組態以接收自光源發射的光。在一些實施例中,光源具有至少900 nm或至少1000 nm之峰值波長,視情況在900至1500 nm之範圍內。In some embodiments, the sensor may include an OPD and a light source as described herein, wherein the OPD is configured to receive light emitted from the light source. In some embodiments, the light source has a peak wavelength of at least 900 nm or at least 1000 nm, preferably in the range of 900 to 1500 nm.
在一些實施例中,來自光源之光在到達OPD之前可能改變或可能不改變。舉例而言,光可在其到達OPD之前經反射、過濾、降頻轉換或升頻轉換。In some embodiments, the light from the light source may or may not be changed before it reaches the OPD. For example, the light may be reflected, filtered, down-converted, or up-converted before it reaches the OPD.
本文所描述之有機光響應裝置可為有機光伏裝置或有機光偵測器。本文所描述之有機光偵測器可用於廣泛範圍的應用中,該等應用包括但不限於偵測環境光之存在及/或亮度;及用於包含有機光偵測器及光源之感測器中。光偵測器可經組態以使得自光源發射之光入射至光偵測器上,且可偵測到光之波長及/或亮度之變化,例如,由於藉由物體(例如,安置於光源與有機光偵測器之間的光徑中之樣品中的目標材料)對光的吸收、反射及/或發射所致。樣品可為非生物樣品,例如水樣品;或取自人類或動物個體之生物樣品。感測器可非限制性地為氣體感測器、生物感測器、X射線成像裝置、影像感測器(諸如相機影像感測器)、運動感測器(例如用於安全性應用中)、接近感測器或指紋感測器。1D或2D光感測器陣列可包含影像感測器中之複數個本文所描述之光偵測器。光偵測器可經組態以偵測自目標分析物發射的光,該目標分析物在光源照射後發射光,或偵測與發光標籤結合之目標分析物所發射的光,該發光標籤在光源照射後發射光。光偵測器可經組態以偵測由目標分析物或與其結合之發光標籤發射之光的波長。The organic photo-responsive devices described herein may be organic photovoltaic devices or organic photodetectors. The organic photodetectors described herein may be used in a wide range of applications, including but not limited to detecting the presence and/or brightness of ambient light; and in sensors comprising an organic photodetector and a light source. The photodetector may be configured so that light emitted from the light source is incident on the photodetector, and changes in the wavelength and/or brightness of the light may be detected, for example, due to absorption, reflection and/or emission of light by an object (e.g., a target material in a sample disposed in an optical path between the light source and the organic photodetector). The sample may be a non-biological sample, such as a water sample; or a biological sample taken from a human or animal individual. The sensor may be, without limitation, a gas sensor, a biosensor, an X-ray imaging device, an image sensor (such as a camera image sensor), a motion sensor (e.g., used in security applications), a proximity sensor, or a fingerprint sensor. A 1D or 2D photo sensor array may include a plurality of photodetectors described herein in an image sensor. The photodetector may be configured to detect light emitted from a target analyte that emits light upon illumination by a light source, or to detect light emitted by a target analyte bound to a luminescent tag that emits light upon illumination by a light source. The photodetector may be configured to detect the wavelength of light emitted by a target analyte or a luminescent tag bound thereto.
實例 實例 1式(III-1)之基團可根據以下反應流程形成: Examples Example 1 The group of formula (III-1) can be formed according to the following reaction process:
步驟 1 :將 1(250g,1.06 mol)溶解於2.5 L二氯乙烷中。將N-溴丁二醯亞胺(754g,4.24 mol)逐份添加至反應混合物中,且將其在75℃下加熱16小時。過濾出固體雜質且用庚烷洗滌。在真空下濃縮濾液,得到255g粗材料。產物 2未經進一步純化即用於下一步驟中。 Step 1 : 1 (250 g, 1.06 mol) was dissolved in 2.5 L of dichloroethane. N-bromosuccinimide (754 g, 4.24 mol) was added portionwise to the reaction mixture, and it was heated at 75 °C for 16 hours. Solid impurities were filtered out and washed with heptane. The filtrate was concentrated under vacuum to give 255 g of crude material. The product 2 was used in the next step without further purification.
步驟 2 :將 2(99.9 g,434 mmol)及 3(55g,310 mmol)溶解於1L乙醇中。將對甲苯磺酸(4.69g,24.7 mmol)添加至反應混合物中且將其在68℃下加熱3小時。隨後,將反應物在真空下濃縮,得到105g粗產物,藉由管柱層析法用二氯甲烷對其進行純化,得到80g所需產物。 Step 2 : 2 (99.9 g, 434 mmol) and 3 (55 g, 310 mmol) were dissolved in 1 L of ethanol. p-Toluenesulfonic acid (4.69 g, 24.7 mmol) was added to the reaction mixture and heated at 68 °C for 3 hours. The reactant was then concentrated under vacuum to give 105 g of a crude product, which was purified by column chromatography with dichloromethane to give 80 g of the desired product.
步驟 3 :將 4(50 g,134 mmol)溶解於500 mL甲醇中。將單水合氫氧化鋰(12.9 g,308 mmol)添加至反應混合物中,且在室溫下攪拌16小時。過濾反應混合物且將所獲得之固體在稀釋鹽酸中攪拌3小時。過濾固體,得到30 g所需產物 5。 Step 3 : 4 (50 g, 134 mmol) was dissolved in 500 mL of methanol. Lithium hydroxide monohydrate (12.9 g, 308 mmol) was added to the reaction mixture and stirred at room temperature for 16 hours. The reaction mixture was filtered and the obtained solid was stirred in dilute hydrochloric acid for 3 hours. The solid was filtered to obtain 30 g of the desired product 5 .
步驟 4 :將 5(30 g,104 mmol)及乙酸酐(600 mL)合倂於燒瓶中。將反應混合物在130℃下加熱6小時。此後,將其冷卻且在減壓下濃縮,獲得30 g粗產物 6,其未經進一步純化即直接用於下一步驟中。 Step 4 : 5 (30 g, 104 mmol) and acetic anhydride (600 mL) were combined in a flask. The reaction mixture was heated at 130 °C for 6 hours. Afterwards, it was cooled and concentrated under reduced pressure to obtain 30 g of crude product 6 , which was used directly in the next step without further purification.
步驟 5向 6(30 g,111mmol)於乙酸酐(240 mL)之攪拌溶液中添加三乙胺(11.2 g,111 mmol)。向其中逐滴添加乙醯乙酸三級丁酯(18.3 g,116 mmol)。將反應混合物在室溫下攪拌16小時且隨後緩慢倒入含有1.5 N鹽酸(400 mL)及400 mL冰水之另一燒瓶中。此隨後在室溫下攪拌48小時。所得固體藉由過濾分離,得到15 g呈黑色固體之所需產物 7,其未經進一步純化即用於下一步驟中。 Step 5 To a stirred solution of 6 (30 g, 111 mmol) in acetic anhydride (240 mL) was added triethylamine (11.2 g, 111 mmol). Tributyl acetoacetate (18.3 g, 116 mmol) was added dropwise thereto. The reaction mixture was stirred at room temperature for 16 hours and then slowly poured into another flask containing 1.5 N hydrochloric acid (400 mL) and 400 mL of ice water. This was then stirred at room temperature for 48 hours. The resulting solid was separated by filtration to give 15 g of the desired product 7 as a black solid, which was used in the next step without further purification.
步驟 6將 7(5 g,18.7 mmol)溶解於吡啶(90 ml)中。向其中添加丙二腈(3.08 g,46.7 mmol)且將混合物在室溫下攪拌2小時。在減壓下濃縮反應物,得到9 g粗材料,藉由中性氧化鋁管柱層析使用二氯甲烷及1%三乙胺/甲醇對其進行純化。所得產物用己烷/二氯甲烷濕磨且濾出,得到2.013 g呈三乙胺鹽之純 III - 1產物(藉由HPLC為98.81%)。 Step 6 7 (5 g, 18.7 mmol) was dissolved in pyridine (90 ml). Malononitrile (3.08 g, 46.7 mmol) was added thereto and the mixture was stirred at room temperature for 2 hours. The reactant was concentrated under reduced pressure to give 9 g of crude material, which was purified by neutral alumina column chromatography using dichloromethane and 1% triethylamine/methanol. The obtained product was wet-triturated with hexane/dichloromethane and filtered to give 2.013 g of pure III - 1 product as triethylamine salt (98.81% by HPLC).
實例 2式(III-2)之基團可根據以下反應流程形成: Example 2 The group of formula (III-2) can be formed according to the following reaction process:
實例 3式(III-3)之基團可根據以下反應流程形成: Example 3 The group of formula (III-3) can be formed according to the following reaction process:
步驟 1如關於III-1。 Step 1 is as in III-1.
步驟 2將 3 (150 g,564 mmol)及 2(181 g,789 mmol)溶解於乙醇(2.5 L)中。將單水合對甲苯磺酸(8.57 g,45.1 mmol)添加至反應混合物中,且將其在65℃下加熱4小時。隨後,將其在真空下濃縮,得到390 g粗產物 4,其未經進一步純化即用於下一步驟中。 Step 2 3 ( 150 g, 564 mmol) and 2 (181 g, 789 mmol) were dissolved in ethanol (2.5 L). p-Toluenesulfonic acid monohydrate (8.57 g, 45.1 mmol) was added to the reaction mixture, and it was heated at 65 °C for 4 hours. Subsequently, it was concentrated under vacuum to give 390 g of crude product 4 , which was used in the next step without further purification.
步驟 3將 4(330 g,717 mmol)溶解於3 L甲醇中。向其中逐滴添加溶解於250 mL水中之單水合氫氧化鋰(68.8 g,1.64 mol)。過濾所得固體且用1.5 N HCl溶液(2 L)攪拌3小時。藉由過濾分離沉澱物,用2 L水洗滌且在真空下乾燥,得到220 g呈灰白色固體之純材料 5。 Step 3 4 (330 g, 717 mmol) was dissolved in 3 L of methanol. Lithium hydroxide monohydrate (68.8 g, 1.64 mol) dissolved in 250 mL of water was added dropwise thereto. The resulting solid was filtered and stirred with 1.5 N HCl solution (2 L) for 3 hours. The precipitate was separated by filtration, washed with 2 L of water and dried under vacuum to give 220 g of pure material 5 as an off-white solid.
步驟 4將 5(150 g,398 mmol)溶解於乙酸酐(1.5 L,14.6 mmol)中。將反應混合物在130℃下加熱16小時。在完成後,在真空下濃縮反應混合物,得到125 g之 6,其藉由進一步純化用於下一步驟中。 Step 4 5 (150 g, 398 mmol) was dissolved in acetic anhydride (1.5 L, 14.6 mmol). The reaction mixture was heated at 130 °C for 16 hours. After completion, the reaction mixture was concentrated under vacuum to obtain 125 g of 6 , which was used in the next step by further purification.
步驟 5合併 6(50 g,139 mmol)及乙酸酐(50 g,139 mmol)且冷卻至0℃。添加三乙胺(20 mL,0.197 mmol),隨後添加乙醯乙酸三級丁酯(16.8 g,145 mmol)且將反應混合物在室溫下攪拌16小時。此後,將混合物在減壓下濃縮且與1.5 N鹽酸(480 mL)及水(1920 mL)一起攪拌3天。完成後,過濾混合物,得到35 g所需產物 7。LCMS指示60%純度且隨後此材料用於下一步驟。 Step 5 6 (50 g, 139 mmol) and acetic anhydride (50 g, 139 mmol) were combined and cooled to 0 °C. Triethylamine (20 mL, 0.197 mmol) was added followed by tributyl acetoacetate (16.8 g, 145 mmol) and the reaction mixture was stirred at room temperature for 16 hours. After this time, the mixture was concentrated under reduced pressure and stirred with 1.5 N hydrochloric acid (480 mL) and water (1920 mL) for 3 days. Upon completion, the mixture was filtered to give 35 g of the desired product 7. LCMS indicated 60% purity and this material was then used in the next step.
步驟 6將 7(30 g,84.2 mmol)溶解於甲苯(1 L)中,且添加乙烷-1,2-二醇(104 g,1.68 mol)及對甲苯磺酸(3.19 g,16.8 mmol)。將反應混合物加熱至135℃持續16小時。在此時間期間,頻繁地使用迪恩-斯達克(Dean-Stark)設備移除水。完成後,將混合物冷卻至室溫且經由矽藻土床過濾,用乙酸乙酯洗滌,隨後用水洗滌,經硫酸鈉乾燥且在真空下濃縮,得到38 g粗產物 8。 Step 6 7 (30 g, 84.2 mmol) was dissolved in toluene (1 L), and ethane-1,2-diol (104 g, 1.68 mol) and p-toluenesulfonic acid (3.19 g, 16.8 mmol) were added. The reaction mixture was heated to 135 °C for 16 hours. During this time, water was frequently removed using a Dean-Stark apparatus. Upon completion, the mixture was cooled to room temperature and filtered through a celite bed, washed with ethyl acetate followed by water, dried over sodium sulfate and concentrated under vacuum to give 38 g of crude product 8 .
步驟 7向含 8(5 g,11.2 mmol)之鄰二甲苯(150 mL)中添加六氰亞鐵酸鉀(III)(4.93 g,13.4 mmol)、1-丁基咪唑(2.91 g,23.5 mmol)及碘化銅(I)(1.27 g,6.71 mmol)。將反應混合物在148℃下加熱24小時。此後,添加六氰亞鐵酸鉀(0.74 g)、碘化銅(0.2 g)及1-丁基咪唑(0.46 mL)且將混合物進一步加熱至148℃持續24小時。完成後,將混合物冷卻至室溫且經由矽藻土墊過濾,且將濾液用水洗滌且用乙酸乙酯萃取。有機相經硫酸鈉乾燥且在真空下濃縮,得到7 g粗中間物。此材料藉由管柱層析法使用乙酸乙酯及己烷混合物進一步純化,得到3.5 g呈黃色固體之所需產物 9。 Step 7 To o-xylene (150 mL) containing 8 (5 g, 11.2 mmol) were added potassium hexacyanoferrate (III) (4.93 g, 13.4 mmol), 1-butylimidazole (2.91 g, 23.5 mmol) and copper (I) iodide (1.27 g, 6.71 mmol). The reaction mixture was heated at 148 °C for 24 hours. Thereafter, potassium hexacyanoferrate (0.74 g), copper iodide (0.2 g) and 1-butylimidazole (0.46 mL) were added and the mixture was further heated to 148 °C for 24 hours. After completion, the mixture was cooled to room temperature and filtered through a diatomaceous earth pad, and the filtrate was washed with water and extracted with ethyl acetate. The organic phase was dried over sodium sulfate and concentrated under vacuum to give 7 g of the crude intermediate. This material was further purified by column chromatography using a mixture of ethyl acetate and hexanes to give 3.5 g of the desired product 9 as a yellow solid.
步驟 8將 9(3 g,8.92 mmol)溶解於三氟乙酸(21 mL)中。將反應混合物在40℃下加熱3小時。接著,在30℃下在真空下濃縮,得到粗材料 10,藉由LCMS測定為50%所需產物,其按原樣用於下一步驟中。 Step 8 9 (3 g, 8.92 mmol) was dissolved in trifluoroacetic acid (21 mL). The reaction mixture was heated at 40 °C for 3 h. It was then concentrated under vacuum at 30 °C to give the crude material 10 , 50% desired product by LCMS, which was used as is in the next step.
步驟 9向含丙二腈(0.304 g,4.61 mmol)及乙酸鈉(9.18 g,112 mmol)之乙醇(120 mL)中逐滴添加溶解於250 ml乙醇中之 10(1.5 g,5.13 mmol)。將反應混合物在室溫下攪拌3小時且隨後在真空下濃縮,得到粗產物。粗產物藉由管柱層析法使用二氯甲烷/甲醇溶劑系統純化。將所得產物懸浮於乙酸乙酯中且攪拌30分鐘且過濾,得到0.5 g呈深色固體之III-3產物(純度88%)。 Step 9 To ethanol (120 mL) containing malononitrile (0.304 g, 4.61 mmol) and sodium acetate (9.18 g, 112 mmol) was added dropwise 10 (1.5 g, 5.13 mmol) dissolved in 250 ml of ethanol. The reaction mixture was stirred at room temperature for 3 hours and then concentrated under vacuum to obtain a crude product. The crude product was purified by column chromatography using a dichloromethane/methanol solvent system. The obtained product was suspended in ethyl acetate and stirred for 30 minutes and filtered to obtain 0.5 g of III-3 product (purity 88%) as a dark solid.
化合物實例 1化合物實例1可根據以下反應流程形成: Compound Example 1 Compound Example 1 can be formed according to the following reaction scheme:
形成表1中所示之化合物2至4。亦展示比較化合物2-4。
表1
量測方法HOMO及LUMO能階藉由方波伏安法(SWV)量測。 Measurement Methods HOMO and LUMO energy levels were measured by square wave voltammetry (SWV).
在SWV中,當工作電極與參考電極之間的電位隨時間經線性地掃描時,量測工作電極處之電流。依據電位之變化繪製正向脈衝與反向脈衝之間的差動電流以得到伏安圖。可使用CHI 660D恆電位器進行量測。In SWV, the current at the working electrode is measured while the potential between the working electrode and the reference electrode is swept linearly over time. The differential current between the forward pulse and the reverse pulse is plotted according to the change in potential to obtain a voltammogram. The CHI 660D potentiostat can be used for measurement.
用以藉由SWV量測HOMO或LUMO能階之裝置可包含以下:含有含0.1 M三級丁基六氟磷酸銨之乙腈的電池;3 mm直徑玻璃碳工作電極;鉑相對電極及無洩漏Ag/AgCI參考電極。The apparatus used to measure the HOMO or LUMO energy level by SWV may include the following: a cell containing 0.1 M tertiary butylammonium hexafluorophosphate in acetonitrile; a 3 mm diameter glassy carbon working electrode; a platinum counter electrode and a leak-free Ag/AgCI reference electrode.
在實驗結束時,出於計算目的將二茂鐵直接添加至現有電池,其中針對二茂鐵相對於Ag/AgCI之氧化及還原使用循環伏安法(CV)來確定電位。At the end of the experiment, ferrocene was added directly to the existing cell for calculation purposes, where the potential for oxidation and reduction of ferrocene relative to Ag/AgCI was determined using cyclic voltammetry (CV).
將樣品溶解於甲苯(3 mg/ml)中,且以3000 rpm直接旋轉至玻璃碳工作電極上。The samples were dissolved in toluene (3 mg/ml) and spun directly onto a glassy carbon working electrode at 3000 rpm.
LUMO = 4.8-E二茂鐵(峰至峰平均值) - E樣品還原(峰最大值)。LUMO = 4.8 - E Ferrocene (peak to peak average) - E Sample reduced (peak maximum).
HOMO = 4.8-E二茂鐵(峰至峰平均值) + E樣品氧化(峰最大值)。HOMO = 4.8-E ferrocene (peak-to-peak average) + E sample oxidation (peak maximum).
典型SWV實驗在15 Hz頻率;25 mV幅值及0.004 V增量步進下運行。針對HOMO及LUMO資料兩者自3種新鮮離心薄膜樣品計算結果。A typical SWV experiment was run at 15 Hz frequency; 25 mV amplitude and 0.004 V increment step. Results were calculated from three freshly centrifuged film samples for both HOMO and LUMO data.
吸收光譜使用Cary 5000 UV-VIS-NIR光譜儀量測。為了對資料解析度進行最佳控制,使用具有可變狹縫寬度(降至0.01 nm)之用於擴展光度範圍的PbSmart NIR偵測器自175 nm至3300 nm獲得量測值。Absorption spectra were measured using a Cary 5000 UV-VIS-NIR spectrometer. For optimal control over data resolution, measurements were acquired from 175 nm to 3300 nm using a PbSmart NIR detector with variable slit width (down to 0.01 nm) for extended photometric range.
除非另外說明,否則吸收值屬於溶液。藉由量測通過溶液樣品之透射輻射之強度來獲得吸收資料。相對於入射波長繪製吸收強度以產生吸收光譜。用於量測吸收率之方法可包含量測石英光析槽中之15 mg/ml溶液且與僅含有溶劑之光析槽進行比較。Unless otherwise stated, absorbance values are for solutions. Absorption data are obtained by measuring the intensity of transmitted radiation through a sample of a solution. The absorption intensity is plotted against the incident wavelength to produce an absorption spectrum. A method for measuring absorbance may include measuring a 15 mg/ml solution in a quartz cell and comparing it to a cell containing only solvent.
除非另外說明,否則本文所提供之溶液吸收資料係在甲苯溶液中量測的。Unless otherwise stated, the solution absorbance data provided herein were measured in toluene solutions.
材料資料參考表2,化合物實例具有比對應比較化合物更長的峰值吸收波長。
表2
參考圖2,化合物實例1在相同吸收條件下具有比比較化合物1更高的吸收強度。2 , Compound Example 1 has a higher absorption intensity than Comparative Compound 1 under the same absorption conditions.
參考圖3且表1中所示,藉由鄰二氯苯旋塗而形成之化合物實例1之膜在約1300 nm下吸收,其比藉由自甲苯旋塗而形成之比較化合物1之膜長大約150 nm。3 and as shown in Table 1, the film of Compound Example 1 formed by spin coating from o-dichlorobenzene absorbs at about 1300 nm, which is about 150 nm longer than the film of Comparative Compound 1 formed by spin coating from toluene.
裝置實例 1塗佈有150 nm厚的氧化銦錫(ITO)層之玻璃基板用含0.2%聚乙亞胺(PEIE)之水溶液塗佈,形成約5 nm膜,從而改良ITO之功函數。將供體聚合物1:化合物實例1(1 : 0.7,按重量計)之混合物的約500 nm厚的本體異質接面層藉由棒塗法自含10 mg/ml溶液之鄰二氯苯/苯甲酸丁酯溶劑混合物(90:10 v/v)中沉積於經改質ITO層上方。在本體異質接面上藉由熱蒸發(MoO 3)及濺鍍(ITO)形成MoO 3(10 nm)及ITO(50 nm)之陽極堆疊。 Device Example 1 A glass substrate coated with a 150 nm thick indium tin oxide (ITO) layer was coated with an aqueous solution containing 0.2% polyethyleneimine (PEIE) to form a film of about 5 nm, thereby modifying the work function of ITO. A bulk heterojunction layer of about 500 nm thick of a mixture of donor polymer 1: compound example 1 (1:0.7, by weight) was deposited on top of the modified ITO layer by rod coating from a 10 mg/ml solution of o-dichlorobenzene/butyl benzoate solvent mixture (90:10 v/v). An anode stack of MoO 3 (10 nm) and ITO (50 nm) was formed on the bulk heterojunction by thermal evaporation (MoO 3 ) and sputtering (ITO).
裝置實例 1A裝置係對於裝置實例1所描述來製備,不同之處在於除了供體聚合物1及化合物實例1,用於形成容納有富勒烯PCBM之本體異質接面層的溶液以供體聚合物1:化合物實例1:PCBM之重量比為1:0.7:0.3。 Device Example 1A The device was prepared as described for Device Example 1, except that in addition to Donor Polymer 1 and Compound Example 1, the solution used to form the bulk heterojunction layer containing fullerene PCBM had a weight ratio of Donor Polymer 1: Compound Example 1:PCBM of 1:0.7:0.3.
比較裝置 1裝置係對於裝置實例1A所描述來製備,不同之處在於使用比較化合物1代替化合物實例1。 Comparative Device 1 The device was prepared as described for Device Example 1A, except that Comparative Compound 1 was used instead of Compound Example 1.
參考圖4,裝置實例1及1A之外部量子效率峰值在約1300 nm處。包括PCBM增加EQE。Referring to Figure 4, the external quantum efficiency of device examples 1 and 1A peaks at about 1300 nm. Including PCBM increases the EQE.
參考圖5,比較裝置1之EQE在約900 nm處達到峰值。Referring to FIG. 5 , the EQE of comparative device 1 reaches a peak at about 900 nm.
參考圖6,裝置實例1及裝置實例2在-3V之反向偏壓下的暗電流遠低於比較裝置1之暗電流。6 , the dark currents of the device examples 1 and 2 under a reverse bias voltage of -3 V are much lower than the dark current of the comparative device 1.
裝置實例2至4 裝置實例2至4係對於裝置實例1A所描述製備,除以下外: - 分別使用化合物實例2至4替代化合物實例1 - 用於形成本體異質接面層之溶劑係表3中所闡述 - 對於裝置實例2及4,供體聚合物1:化合物實例:PCBM重量比為1:0.875:0.625 Device Examples 2 to 4 Device Examples 2 to 4 were prepared as described for Device Example 1A, except that: - Compound Examples 2 to 4 were used instead of Compound Example 1, respectively - The solvents used to form the bulk heterojunction layer were as described in Table 3 - For Device Examples 2 and 4, the weight ratio of donor polymer 1: Compound Example: PCBM was 1:0.875:0.625
以與對應裝置實例相同之方式形成含有比較化合物2至4之比較裝置2至4。
表3
模型化使含有式(III)之基團的式(I)之NFA及不具有式(III)之基團的比較NFA之HOMO及LUMO能階模型化。結果闡述於表4中,其中S1f對應於自S1轉變的振盪器強度(預測吸收強度)且Eopt為經模型化光學間隙。 Modeling The HOMO and LUMO energy levels of the NFA of formula (I) containing the group of formula (III) and the comparative NFA without the group of formula (III) were modeled. The results are shown in Table 4, where S1f corresponds to the oscillator intensity (predicted absorption intensity) shifted from S1 and Eopt is the modeled optical gap.
相較於含有比較受電子端基之NFA,含有式(III)之受電子端基的NFA具有較小模型化帶隙及較長波長模型化光學間隙。
表4
101:基板 103:陰極 105:本體異質接面層 107:陽極 101: Substrate 103: Cathode 105: Body heterojunction layer 107: Anode
所揭示之技術及附圖描述所揭示之技術的一些實施方式。The disclosed technology and accompanying figures describe some implementations of the disclosed technology.
圖1繪示根據一些實施例之有機光響應裝置;FIG. 1 illustrates an organic light responsive device according to some embodiments;
圖2為化合物實例1之甲苯溶液及比較化合物1之甲苯溶液的波長相較於消光係數的圖;FIG2 is a graph showing the wavelength versus extinction coefficient of a toluene solution of Example Compound 1 and a toluene solution of Comparative Compound 1;
圖3為化合物實例1之膜及比較化合物1之膜的波長相較於標準化吸收率的圖;FIG3 is a graph showing the wavelength phase of the film of Compound Example 1 and the film of Comparative Compound 1 compared to the normalized absorbance;
圖4為其中唯一受體為化合物實例1之OPD裝置實例1及其中受體為化合物實例1及PCBM之OPD裝置實例2之外部量子效率(EQE)相較於波長的圖;FIG4 is a graph of external quantum efficiency (EQE) versus wavelength for OPD device Example 1 in which the only acceptor is Compound Example 1 and OPD device Example 2 in which the acceptors are Compound Example 1 and PCBM;
圖5為含有比較化合物1及PCBM之OPD比較裝置2的外部量子效率(EQE)相較於波長的圖;及FIG5 is a graph of external quantum efficiency (EQE) versus wavelength for OPD Comparison Device 2 containing Comparison Compound 1 and PCBM; and
圖6展示含有化合物實例1之OPD裝置及含有比較化合物1之OPD裝置在反向偏壓為-3V下之暗電流。FIG. 6 shows the dark current of the OPD device containing Compound Example 1 and the OPD device containing Comparative Compound 1 under a reverse bias voltage of -3V.
圖式未按比例繪製且具有各種視點及視角。圖式為一些實施方式及實例。另外,出於論述所揭示技術之一些實施例的目的,一些組分及/或操作可分離為不同區塊或組合為單一區塊。此外,雖然該技術適於各種修改及替代形式,但具體實施例已在圖式中藉助於實例展示且在下文詳細描述。然而,不希望將該技術限於所描述之特定實施方式。相反,希望該技術涵蓋屬於如所附申請專利範圍所定義的技術範圍內之所有修改、等效物及替代方案。The drawings are not drawn to scale and have various viewpoints and perspectives. The drawings are some embodiments and examples. In addition, for the purpose of discussing some embodiments of the disclosed technology, some components and/or operations may be separated into different blocks or combined into a single block. In addition, although the technology is suitable for various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and described in detail below. However, it is not desired to limit the technology to the specific embodiments described. Instead, it is desired that the technology cover all modifications, equivalents and alternatives that fall within the scope of the technology as defined by the attached application scope.
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