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TW202448894A - Compound - Google Patents

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TW202448894A
TW202448894A TW113105335A TW113105335A TW202448894A TW 202448894 A TW202448894 A TW 202448894A TW 113105335 A TW113105335 A TW 113105335A TW 113105335 A TW113105335 A TW 113105335A TW 202448894 A TW202448894 A TW 202448894A
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康納 派翠克
格洛斯 尼爾 亞柯比
麥可 馬切伊季克
佛洛倫斯 波瑟
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日商住友化學股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/12Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains three hetero rings
    • C07D495/14Ortho-condensed systems
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/22Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains four or more hetero rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D517/00Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms
    • C07D517/12Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms in which the condensed system contains three hetero rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D517/00Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms
    • C07D517/22Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms in which the condensed system contains four or more hetero rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D519/00Heterocyclic compounds containing more than one system of two or more relevant hetero rings condensed among themselves or condensed with a common carbocyclic ring system not provided for in groups C07D453/00 or C07D455/00
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    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains

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Abstract

A compound of formula (I): wherein: X 1is O, S, Se, NR 2or PR 2wherein R 2in each occurrence is H or a substituent; Y 1is O, S or Se; Ar 1in each occurrence is independently an unsubstituted or substituted monocyclic or polycyclic aryl or heteroaryl group or is absent; R 1in each occurrence is independently a substituent; B 1independently in each occurrence is a bridging group; f1 and f2 are each 1; g is at least 1; and A in each occurrence is independently a monovalent electron-accepting group.

Description

化合物Compound

化合物Compound

WO2022/129137揭示式EAG-EDG-EAG之化合物,其中EDG為式(II)之基團且各EAG獨立地為式(III)之受電子基團: WO2022/129137 discloses a compound of the formula EAG-EDG-EAG, wherein EDG is a group of formula (II) and each EAG is independently an electron accepting group of formula (III):

WO2021/079140揭示一種組合物,其包含電子受體材料及電子供體材料,其中該電子受體材料為式EAG-EDG-EAG之化合物,其中各EAG為受電子基團且EDG為下式之基團: WO2021/079140 discloses a composition comprising an electron acceptor material and an electron donor material, wherein the electron acceptor material is a compound of the formula EAG-EDG-EAG, wherein each EAG is an electron acceptor group and EDG is a group of the following formula:

本揭示提供式(I)化合物: (I) 其中: X 1為O、S、Se、NR 2或PR 2,其中R 2在每次出現時為H或取代基; Y 1為O、S或Se; Ar 1在每次出現時獨立地為未經取代或經取代之單環或多環芳基或雜芳基或不存在; R 1在每次出現時獨立地為取代基; B 1在每次出現時獨立地為橋接基團; f1及f2各為1; g至少為1;且 A在每次出現時獨立地為單價受電子基團。 The present disclosure provides compounds of formula (I): (I) wherein: X 1 is O, S, Se, NR 2 or PR 2 , wherein R 2 at each occurrence is H or a substituent; Y 1 is O, S or Se; Ar 1 at each occurrence is independently an unsubstituted or substituted monocyclic or polycyclic aromatic or heteroaromatic group or is absent; R 1 at each occurrence is independently a substituent; B 1 at each occurrence is independently a bridging group; f1 and f2 are each 1; g is at least 1; and A at each occurrence is independently a monovalent electron accepting group.

視情況,至少一個A為式(II)之受電子基團: (II) 其中: G為C=O、C=S、SO、SO 2、NR 33或C(R 33) 2,其中R 33為CN或COOR 40,其中R 40在每次出現時為H或取代基; R 3為H或取代基; Z各自獨立地為CN、CF 3或COOR 40,其中R 40在每次出現時為H或取代基;且 Ar 2為未經取代或經取代之單環或多環芳環或雜芳環。 Optionally, at least one A is an electron accepting group of formula (II): (II) wherein: G is C=O, C=S, SO, SO 2 , NR 33 or C(R 33 ) 2 , wherein R 33 is CN or COOR 40 , wherein R 40 is H or a substituent at each occurrence; R 3 is H or a substituent; Z is each independently CN, CF 3 or COOR 40 , wherein R 40 is H or a substituent at each occurrence; and Ar 2 is an unsubstituted or substituted monocyclic or polycyclic aromatic ring or heterocyclic aromatic ring.

根據技術方案2之化合物,其中Ar 2係選自: 經至少一個CN取代基取代之苯;及 未經取代或經取代之單環或多環雜芳族基團。 According to the compound of technical solution 2, Ar 2 is selected from: benzene substituted with at least one CN substituent; and unsubstituted or substituted monocyclic or polycyclic heteroaromatic groups.

視情況,式(II)之基團具有式(IIa): (IIa) 其中X 7-X 10各自獨立地為CR 12或N,其中R 12在每次出現時為H或選自C 1-20烴基及拉電子基團之取代基,其限制條件為當X 7-X 10中之各者為CR 12時,則至少一個R 12為CN。 Optionally, the group of formula (II) has formula (IIa): (IIa) wherein X7 - X10 are each independently CR12 or N, wherein R12 at each occurrence is H or a substituent selected from C1-20 alkyl and electron withdrawing groups, with the proviso that when each of X7 - X10 is CR12 , at least one R12 is CN.

視情況,式(II)之基團具有式(IIb): (IIb) 其中Ar 3為未經取代或經取代之單環或多環芳族或雜芳族基團。 Optionally, the group of formula (II) has formula (IIb): (IIb) wherein Ar 3 is an unsubstituted or substituted monocyclic or polycyclic aromatic or heteroaromatic group.

視情況,Ar 2為經至少一個CN取代基取代之苯。 Optionally, Ar2 is benzene substituted with at least one CN substituent.

視情況,B 1係選自未經取代或經取代之呋喃;未經取代或經取代之噻吩;或其稠合類似物。 Optionally, B1 is selected from unsubstituted or substituted furan; unsubstituted or substituted thiophene; or a fused analog thereof.

視情況,B 1為式(III)之基團: (III) 其中Y 2為O、S或Se;且Ar 4為未經取代或經取代之單環或多環芳族或雜芳族基團。 Optionally, B1 is a group of formula (III): (III) wherein Y 2 is O, S or Se; and Ar 4 is an unsubstituted or substituted monocyclic or polycyclic aromatic or heteroaromatic group.

視情況,式(III)之基團為式(IIIa)之基團: (IIIa) 其中R 8在每次出現時為H或取代基。 Optionally, the group of formula (III) is a group of formula (IIIa): (IIIa) wherein R 8 at each occurrence is H or a substituent.

視情況,各Ar 1不存在。 Optionally, each Ar 1 is absent.

本揭示提供一種組合物,其包含如本文所描述之化合物及供電子材料。The present disclosure provides a composition comprising a compound as described herein and an electron donating material.

本揭示提供一種調配物,其包含溶解或分散於一種或多種溶劑中之如本文所描述之化合物或組合物。The present disclosure provides a formulation comprising a compound or composition as described herein dissolved or dispersed in one or more solvents.

本揭示提供一種有機光響應裝置,其包含陽極、陰極及安置於該陽極與該陰極之間的光活性層,其中該光活性層包含如本文所描述之組合物。The present disclosure provides an organic photoresponsive device, comprising an anode, a cathode, and a photoactive layer disposed between the anode and the cathode, wherein the photoactive layer comprises the composition as described herein.

本揭示提供一種光感測器,其包含光源及如本文所描述之有機光偵測器,其中該有機光偵測器經組態以偵測自該光源發射之光。視情況,光源發射峰值波長大於1000 nm的光。The present disclosure provides a photo sensor comprising a light source and an organic photodetector as described herein, wherein the organic photodetector is configured to detect light emitted from the light source. Optionally, the light source emits light with a peak wavelength greater than 1000 nm.

除非上下文另有明確要求,否則在整個說明書及申請專利範圍中,詞「包含(comprise)」、「包含(comprising)」及其類似者將以包容性意義,而非排他性或窮盡性意義解釋;換言之,以「包括但不限於」之意義解釋。另外,當用於本申請案中時,詞「本文中」、「上文」、「下文」及類似意義之詞係指本申請案整體而非本申請案之任何特定部分。在上下文准許之情況下,實施方式中使用單數或複數之詞亦可分別包括複數或單數。參考兩個或更多個項目之清單的詞「或」涵蓋該詞之所有以下解譯:清單中之項目中之任一者、清單中之所有項目及清單中之項目的任何組合。當用於本申請案中時,對一層「在」另一層「上方」之提及意謂該等層可直接接觸或可存在一個或多個介入層。當用於本申請案中時,對一層「在」另一層「上」之提及意謂該等層直接接觸。除非另外特定陳述,否則對特定原子之提及包括彼原子之任何同位素。Unless the context clearly requires otherwise, throughout the specification and claims, the words "comprise," "comprising," and the like are to be interpreted in an inclusive sense, and not in an exclusive or exhaustive sense; in other words, in the sense of "including, but not limited to." In addition, when used in this application, the words "herein," "above," "below," and words of similar import refer to this application as a whole and not to any particular part of this application. Where the context permits, words in the embodiments using the singular or plural may also include the plural or singular, respectively. The word "or" referring to a list of two or more items includes all of the following interpretations of the word: any one of the items in the list, all of the items in the list, and any combination of the items in the list. When used in this application, reference to a layer being "on" another layer means that the layers may be in direct contact or one or more intervening layers may be present. When used in this application, reference to a layer being "on" another layer means that the layers are in direct contact. Unless specifically stated otherwise, reference to a particular atom includes any isotope of that atom.

本文中所提供之技術之教示可以應用於其他系統,不必為下文所描述之系統。下文所描述之各種實例之要素及動作可以經組合以提供技術之其他實施方式。技術之一些替代實施方式可不僅將額外要素包括於下文所提及的彼等實施方式,而且可包括更少的要素。The teachings of the technology provided herein can be applied to other systems, not necessarily the system described below. The elements and actions of the various examples described below can be combined to provide other implementations of the technology. Some alternative implementations of the technology may include not only additional elements to those implementations mentioned below, but may also include fewer elements.

可根據以下詳細描述對技術進行此等及其他變化。雖然本說明書描述技術之某些實例,且描述所設想之最佳模式,但無論本說明書如何詳細地呈現,可以許多方式來實踐該技術。如上文所提及,在描述技術之某些特徵或範疇時,所使用之特定術語不應理解為暗示該術語在本文中重新定義為限於彼術語所相關聯的技術之任何具體特性、特徵或範疇。一般而言,除非實施方式章節明確定義此類術語,否則以下申請專利範圍中所使用之術語不應解釋為將該技術限於本說明書中所揭示之具體實例。因此,技術之實際範疇不僅涵蓋所揭示之實例,而且涵蓋根據申請專利範圍來實施或執行該技術的所有等效方式。These and other variations can be made to the technology in light of the detailed description below. Although this specification describes certain examples of the technology, and describes the best mode contemplated, no matter how detailed this specification presents, the technology can be practiced in many ways. As mentioned above, when describing certain features or scopes of the technology, the use of specific terms should not be understood to imply that the term is redefined herein to be limited to any specific characteristics, features, or scope of the technology with which the term is associated. In general, unless such terms are expressly defined in the implementation section, the terms used in the following patent application scope should not be interpreted as limiting the technology to the specific examples disclosed in this specification. Therefore, the actual scope of the technology covers not only the examples disclosed, but also all equivalent ways of implementing or performing the technology according to the scope of the claims.

為減少申請專利範圍之數目,下文以某些申請專利範圍形式呈現技術之某些範疇,但本申請人以多個申請專利範圍形式設想技術之各種範疇。In order to reduce the number of patent claims, certain areas of the technology are presented below in the form of certain patent claims, but the applicant envisions various areas of the technology in multiple patent claim forms.

在以下描述中,出於解釋之目的,闡述眾多特定細節以便提供對所揭示技術之實施方式之透徹理解。然而,熟習此項技術者將顯而易見,可在無此等特定細節中之一些的情況下實踐所揭示技術之實施例。 供體基團D In the following description, for the purpose of explanation, numerous specific details are set forth in order to provide a thorough understanding of the implementation of the disclosed technology. However, it will be apparent to those skilled in the art that embodiments of the disclosed technology can be practiced without some of these specific details. Donor group D

式(I)化合物包含供電子基團D: (D) X 1為O、S、Se、NR 2或PR 2,其中R 2在每次出現時為H或取代基。 Y 1為O、S或Se。 Ar 1在每次出現時獨立地為未經取代或經取代之單環或多環芳基或雜芳基或不存在。 g至少為1,較佳1、2或3。 R 1在每次出現時獨立地為取代基。 The compound of formula (I) comprises an electron donating group D: (D) X 1 is O, S, Se, NR 2 or PR 2 , wherein R 2 is H or a substituent at each occurrence. Y 1 is O, S or Se. Ar 1 is independently unsubstituted or substituted monocyclic or polycyclic aryl or heteroaryl at each occurrence or absent. g is at least 1, preferably 1, 2 or 3. R 1 is independently a substituent at each occurrence.

較佳地,R 1在每次出現時獨立地選自: C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 17置換,其中R 17為C 1-12烴基、COO或CO且該烷基之一個或多個H原子可經F置換;及 芳族或雜芳族基團,較佳C 6-20芳基、更佳苯基,其未經取代或經一個或多個取代基取代。 Preferably, R 1 is independently selected at each occurrence from: C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 17 , wherein R 17 is C 1-12 alkyl, COO or CO and one or more H atoms of the alkyl may be replaced by F; and aromatic or heteroaromatic groups, preferably C 6-20 aryl, more preferably phenyl, which is unsubstituted or substituted by one or more substituents.

在存在之情況下,芳族或雜芳族基團R 1之取代基較佳選自取代基R 11,其中R 11在每次出現時獨立地選自F、Cl、Br、CN、NO 2及C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 17置換,其中R 17為C 1-12烴基、COO或CO且該烷基之一個或多個H原子可經F置換。 Where present, substituents of the aromatic or heteroaromatic group R 1 are preferably selected from substituents R 11 , wherein R 11 at each occurrence is independently selected from F, Cl, Br, CN, NO 2 and C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 17 , wherein R 17 is C 1-12 alkyl, COO or CO and one or more H atoms of the alkyl may be replaced by F.

Y 1在每次出現時獨立地選自F、Cl、Br、CN、NO 2及C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、COO、CO或NR 17置換,其中R 17為C 1-12烴基,且其中該烷基之一個或多個H原子可經F置換。 Y 1 is independently selected at each occurrence from F, Cl, Br, CN, NO 2 and C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, COO, CO or NR 17 , wherein R 17 is C 1-12 alkyl, and wherein one or more H atoms of the alkyl may be replaced by F.

R 17視情況為C 1-12烷基或苯基,其未經取代或經一個或多個C 1-6烷基取代。 R 17 is optionally C 1-12 alkyl or phenyl, which is unsubstituted or substituted with one or more C 1-6 alkyl groups.

藉由本文任何地方所使用之烷基的「非末端C原子」意謂除了正烷基鏈末端處之甲基的C原子或在支鏈烷基鏈末端處之甲基的C原子以外之C原子。By "non-terminal C atom" of an alkyl group as used anywhere herein is meant a C atom other than the C atom of a methyl group at the terminal end of a normal alkyl chain or the C atom of a methyl group at the terminal end of a branched alkyl chain.

若本文任何地方所描述之基團的末端C原子經置換,則隨後所得基團可為包含抗衡陽離子(例如銨或金屬抗衡陽離子,較佳銨或鹼金屬陽離子)之陰離子基團。If a terminal C atom of a group described anywhere herein is replaced, the resulting group may be a cationic group comprising a counter cation, such as an ammonium or metal counter cation, preferably an ammonium or alkali metal cation.

本文任何地方所描述,經另一原子或基團置換的烷基取代基之C原子較佳為非末端C原子,且所得取代基較佳為非離子性的。Where described anywhere herein, a C atom of an alkyl substituent which is replaced by another atom or group is preferably a non-terminal C atom, and the resulting substituent is preferably non-ionic.

R 2較佳為H;C 1-12烷基,其中該C 1-12烷基之除末端C原子或與NR 2之N結合之C原子外的一個或多個C原子可經O、S、CO或COO置換;或芳族或雜芳族基團,較佳C 6-12芳基、更佳苯基,其可未經取代或經一個或多個取代基取代。 R2 is preferably H; C1-12 alkyl, wherein one or more C atoms of the C1-12 alkyl except the terminal C atom or the C atom bound to the N of NR2 may be replaced by O, S, CO or COO; or an aromatic or heteroaromatic group, preferably a C6-12 aryl group, more preferably a phenyl group, which may be unsubstituted or substituted by one or more substituents.

在存在之情況下,芳族或雜芳族基團R 2之取代基較佳選自如上文所描述之R 11Where present, substituents for the aromatic or heteroaromatic group R 2 are preferably selected from R 11 as described above.

更佳地,R 2為H或C 1-20烴基。 More preferably, R 2 is H or C 1-20 alkyl.

如本文任何地方所描述之C 1-20烴基可選自C 1-20烷基;未經取代之苯基;及經一個或多個C 1-12烷基取代之苯基。 A C 1-20 alkyl group as described anywhere herein may be selected from C 1-20 alkyl groups; unsubstituted phenyl groups; and phenyl groups substituted with one or more C 1-12 alkyl groups.

式(I)之受電子基團A中之各者具有比式(I)之供體基團D深(亦即,距真空更遠)、較佳深至少1 eV之最低未佔用分子軌域(LUMO)能階。受電子基團A及供電子基團D之LUMO能階可藉由對此等基團之LUMO能階進行建模來測定,其中鍵結至相鄰基團之各鍵經鍵結至氫原子之鍵置換。可使用獲自Gaussian的Gaussian09軟體、使用具有B3LYP(泛函)及LACVP*(基底函數組)的Gaussian09進行模型化。Each of the electron accepting groups A of formula (I) has a lowest unoccupied molecular orbital (LUMO) energy level that is deeper (i.e., further from vacuum) than the donor group D of formula (I), preferably at least 1 eV deeper. The LUMO energy levels of the electron accepting groups A and the electron donating groups D can be determined by modeling the LUMO energy levels of these groups, wherein each bond to a neighboring group is replaced by a bond to a hydrogen atom. Modeling can be performed using Gaussian09 software obtained from Gaussian, using Gaussian09 with B3LYP (functional) and LACVP* (basis function set).

較佳地,式(I)化合物具有大於1000 nm、視情況至少1200 nm、較佳小於1800 nm之峰值吸收波長。Preferably, the compound of formula (I) has a peak absorption wavelength greater than 1000 nm, optionally at least 1200 nm, preferably less than 1800 nm.

各Ar 1獨立地可存在或不存在。在Ar 1均不存在之實施例中基團D具有式D-1: (D-1) 其中R 4在每次出現時獨立地為H或取代基,視情況H或如上文所描述之取代基R 11。較佳地,各R 4為H。 Each Ar 1 may be present or absent independently. In embodiments where Ar 1 is absent, the group D has the formula D-1: (D-1) wherein R 4 at each occurrence is independently H or a substituent, optionally H or a substituent R 11 as described above. Preferably, each R 4 is H.

視情況,僅一個Ar 1基團存在。 Optionally, only one Ar 1 group is present.

視情況,存在兩個Ar 1基團,在此情況下,Ar 1基團相同或不同。較佳地,Ar 1在每次出現時獨立地選自呋喃;噻吩;呋喃并呋喃;噻吩并噻吩;及呋喃并噻吩。Ar 1之取代基若存在,則視情況選自如上文所描述之取代基R 11。 橋接單元 Optionally, there are two Ar 1 groups, in which case the Ar 1 groups are the same or different. Preferably, Ar 1 is independently selected at each occurrence from furan; thiophene; furanofuran; thienothiophene; and furanothiophene. Substituents for Ar 1, if present, are optionally selected from substituents R 11 as described above. Bridging unit

橋接單元B 1較佳各自選自伸乙烯基、伸芳基及伸雜芳基。伸芳基及伸雜芳基較佳為單環或雙環基團,各可未經取代或經一個或多個取代基取代。 The bridging unit B1 is preferably selected from a vinyl group, an aryl group and a heteroaryl group. The aryl group and the heteroaryl group are preferably monocyclic or bicyclic groups, and each may be unsubstituted or substituted with one or more substituents.

較佳地,各B 1含有至少一個伸芳基或伸雜芳基,更佳至少一個伸雜芳基。 Preferably, each B 1 contains at least one arylene group or heteroarylene group, more preferably at least one heteroarylene group.

示例性單環芳族及雜芳族基團B 1為苯、噻吩及呋喃,各可未經取代或經一個或多個取代基取代,視情況經一個或多個如下所描述之取代基R 8取代。 Exemplary monocyclic aromatic and heteroaromatic groups B 1 are benzene, thiophene and furan, each of which may be unsubstituted or substituted with one or more substituents, optionally substituted with one or more substituents R 8 as described below.

示例性雙環基團B 1係選自式(III)及(IV): (III) (IV) 其中Ar 4為未經取代或經取代之單環芳族或雜芳族基團,較佳為苯;噻吩;呋喃;吡啶;吡 ;或哌啶,各可未經取代或經一個或多個取代基取代,視情況經一個或多個如下所描述之取代基R 8取代,且Y 2為O、S或Se。 Exemplary bicyclic groups B1 are selected from formula (III) and (IV): (III) (IV) wherein Ar 4 is an unsubstituted or substituted monocyclic aromatic or heteroaromatic group, preferably benzene; thiophene; furan; pyridine; or piperidine, each of which may be unsubstituted or substituted with one or more substituents, optionally substituted with one or more substituents R 8 as described below, and Y 2 is O, S or Se.

視情況伸雜芳基B 1係選自式(VIa)-(VIo)之單元: (VIa) (VIb) (VIc) (VId) (VIe) (VIf) (VIg) (VIh) (VIi) (VIj) (VIk) (VIl) (VIm) (VIn) (VIo) 其中R 55為H或取代基,視情況H或C 1-20烴基;且R 8在每次出現時獨立地為H或取代基,較佳為H或選自以下之取代基: F;CN;NO 2;C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換且該烷基之一個或多個H原子可經F置換;未經取代或經一個或多個取代基取代之苯基;及-B(R 14) 2,其中R 14在每次出現時為取代基,視情況C 1-20烴基。 The extended aryl group B1 is optionally selected from units of formula (VIa) to (VIo): (VIa) (VIb) (VIc) (VId) (VIe) (VIf) (VIg) (VIh) (VIi) (VIj) (VIk) (VIl) (VIm) (VIn) (VIo) wherein R 55 is H or a substituent, optionally H or C 1-20 alkyl; and R 8 is independently H or a substituent at each occurrence, preferably H or a substituent selected from the following: F; CN; NO 2 ; C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO and one or more H atoms of the alkyl may be replaced by F; phenyl which is unsubstituted or substituted with one or more substituents; and -B(R 14 ) 2 , wherein R 14 is a substituent at each occurrence, optionally C 1-20 alkyl.

苯基R 8之取代基在存在之情況下,可選自如上文所描述之取代基R 11Substituents for the phenyl group R 8 , if present, may be selected from the substituents R 11 as described above.

R 6為H或取代基,較佳為H或C 1-20烴基。 R6 is H or a substituent, preferably H or a C1-20 alkyl group.

如本文任何地方所描述之C 1-20烴基可選自C 1-20烷基;未經取代之苯基;及經一個或多個C 1-12烷基取代之苯基。 A C 1-20 alkyl group as described anywhere herein may be selected from C 1-20 alkyl groups; unsubstituted phenyl groups; and phenyl groups substituted with one or more C 1-12 alkyl groups.

式(VIa)、(VIb)及(VIc)之R 8基團可連接形成雙環,其可經一個或多個取代基取代,視情況經一個或多個選自F之取代基取代;CN;NO 2;C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換且該烷基之一個或多個H原子可經F置換。 The R 8 groups of formula (VIa), (VIb) and (VIc) may be linked to form a bicyclic ring, which may be substituted by one or more substituents, optionally substituted by one or more substituents selected from F; CN; NO 2 ; C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO and one or more H atoms of the alkyl may be replaced by F.

R 8較佳為H、C 1-20烷基或C 1-19烷氧基。 R8 is preferably H, C1-20 alkyl or C1-19 alkoxy.

式(VIa)、(VIb)及(VIc)之R 8基團可連接形成視情況經取代之雙環。 受電子基團A The R 8 groups in formula (VIa), (VIb) and (VIc) may be linked to form a bicyclic ring which may be substituted.

單價受體基團A可各自獨立地選自熟練技術人員已知之任何此類單元。The monovalent receptor groups A can each be independently selected from any such units known to the skilled artisan.

式(I)化合物之A基團可相同或不同,較佳相同。The A groups in the compounds of formula (I) may be the same or different, preferably the same.

示例性單價受體基團包括但不限於式(IXa)-(IXq)之基團 (IXa) (IXb) (IXc) (IXd) (IXe) (IXf) (IXg) (IXh) (IXi) (IXj) (IXk) (IXl) (IXm) (IXn) (IXo) (IXp) (IXq) Exemplary monovalent acceptor groups include, but are not limited to, groups of formula (IXa)-(IXq): (IXa) (IXb) (IXc) (IXd) (IXe) (IXf) (IXg) (IXh) (IXi) (IXj) (IXk) (IXl) (IXm) (IXn) (IXo) (IXp) (IXq)

U為5或6員環,其未經取代或經一個或多個取代基取代且其可與一個或多個其他環稠合。U is a 5- or 6-membered ring which is unsubstituted or substituted with one or more substituents and which may be fused to one or more other rings.

G為C=O、C=S、SO、SO 2、NR 33或C(R 33) 2,其中R 33為CN或COOR 40。G較佳為C=O或SO 2,更佳為C=O。 G is C=O, C=S, SO, SO 2 , NR 33 or C(R 33 ) 2 , wherein R 33 is CN or COOR 40 . G is preferably C=O or SO 2 , more preferably C=O.

式(IXe)之N原子可未經取代或經取代。The N atom of formula (IXe) may be unsubstituted or substituted.

R 3為H或取代基,較佳為H或選自由以下組成之群的取代基:C 1-12烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換且該烷基之一個或多個H原子可經F置換;及芳族基團,視情況為苯基,其未經取代或經一個或多個選自F及C 1-12烷基之取代基取代,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換。 R 3 is H or a substituent, preferably H or a substituent selected from the group consisting of: C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO and one or more H atoms of the alkyl may be replaced by F; and an aromatic group, optionally a phenyl group, which is unsubstituted or substituted with one or more substituents selected from F and C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO.

最佳地,R 3為H。 Most preferably, R3 is H.

J為O或S,較佳為O。J is O or S, preferably O.

R 13在每次出現時為取代基,視情況C 1-12烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換且該烷基之一個或多個H原子可經F置換。 R 13 is a substituent at each occurrence, optionally C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO and one or more H atoms of the alkyl may be replaced by F.

R 15在每次出現時獨立地為H;F;C 1-12烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換且該烷基之一個或多個H原子可經F置換;芳族基團,視情況為苯基,其未經取代或經一個或多個選自F及C 1-12烷基之取代基取代,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換;或選自以下之基團: R 15 is independently H at each occurrence; F; C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO and one or more H atoms of the alkyl may be replaced by F; an aromatic group, optionally phenyl, which is unsubstituted or substituted by one or more substituents selected from F and C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO; or a group selected from the following: ; ; ; , .

R 16為H或取代基,較佳為選自以下之取代基: -(Ar 5) w,其中Ar 5在每次出現時獨立地為未經取代或經取代之芳基或雜芳基,較佳為噻吩,且w為1、2或3; 及 C 1-12烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換且該烷基之一個或多個H原子可經F置換。 R 16 is H or a substituent, preferably a substituent selected from the following: -(Ar 5 ) w , wherein Ar 5 is independently unsubstituted or substituted aryl or heteroaryl at each occurrence, preferably thiophene, and w is 1, 2 or 3; ; ; ; , and C 1-12 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO and one or more H atoms of the alkyl may be replaced by F.

Ar 6為5員雜芳族基團,較佳噻吩或呋喃,其未經取代或經一個或多個取代基取代。 Ar 6 is a 5-membered heteroaromatic group, preferably thiophene or furan, which is unsubstituted or substituted with one or more substituents.

Ar 5及Ar 6之取代基在存在之情況下,視情況選自C 1-12烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換且該烷基之一個或多個H原子可經F置換。 Substituents for Ar5 and Ar6 , where present, are optionally selected from C1-12 alkyl groups, wherein one or more non-adjacent C atoms may be replaced by O, S, NR6 , COO or CO and one or more H atoms of the alkyl group may be replaced by F.

T 1、T 2及T 3各自獨立地表示可與一個或多個其他環稠合之芳基或雜芳基環,視情況為苯。T 1、T 2及T 3之取代基在存在之情況下,視情況選自R 25之非H基團。在一較佳實施例中,T 3為苯并噻二唑。 T 1 , T 2 and T 3 each independently represent an aryl or heteroaryl ring which may be fused to one or more other rings, optionally benzene. Substituents for T 1 , T 2 and T 3 , if present, are optionally selected from non-H groups of R 25. In a preferred embodiment, T 3 is benzothiadiazole.

Z 1為N或P。 Z1 is N or P.

Ar 8為稠合之雜芳族基團,其未經取代或經一個或多個取代基取代,視情況經一個或多個非H取代基R 3取代,且其結合至B 1或B 2之芳族C原子及結合至B 1或B 2之硼取代基。 Ar 8 is a fused heteroaromatic group which is unsubstituted or substituted with one or more substituents, optionally substituted with one or more non-H substituents R 3 , and which is bound to an aromatic C atom of B 1 or B 2 and to a boron substituent of B 1 or B 2 .

較佳基團A為具有直接結合至B 1之非芳族碳-碳鍵之基團。 Preferred group A is a group having a non-aromatic carbon-carbon bond directly bonded to B1 .

較佳至少一個A,較佳兩個基團A為式(II)之基團: (II) 其中: G如上文所描述且較佳為C=O或SO 2,更佳為C=O; R 3如上文所描述; Ar 2為未經取代或經取代之單環或稠合芳族或雜芳族基團,較佳為苯或僅具有C或N環原子之單環或雙環雜芳族基團,例如喹喏啉;且 各Z獨立地為CN、CF 3或COOR 40,其中R 40在每次出現時為H或取代基,較佳為H或C 1-20烴基。較佳地,各Z相同。較佳地,各Z為CN。 Preferably at least one A, preferably two groups A are groups of formula (II): (II) wherein: G is as described above and is preferably C=O or SO 2 , more preferably C=O; R 3 is as described above; Ar 2 is an unsubstituted or substituted monocyclic or fused aromatic or heteroaromatic group, preferably benzene or a monocyclic or bicyclic heteroaromatic group having only C or N ring atoms, such as quinoxaline; and each Z is independently CN, CF 3 or COOR 40 , wherein R 40 is H or a substituent at each occurrence, preferably H or a C 1-20 alkyl group. Preferably, each Z is the same. Preferably, each Z is CN.

Ar 2可未經取代或經一個或多個取代基取代。Ar 2之取代基較佳選自如上文所描述之基團R 11Ar 2 may be unsubstituted or substituted with one or more substituents. The substituents of Ar 2 are preferably selected from the groups R 11 described above.

視情況,式(II)之基團具有式(IIa): (IIa) X 7-X 10各自獨立地為CR 12或N,其中R 12在每次出現時為H或選自C 1-20烴基及拉電子基團之取代基。較佳地,拉電子基團為F、Cl、Br或CN,更佳為F、Cl或CN;且最佳為CN。 Optionally, the group of formula (II) has formula (IIa): (IIa) X7 - X10 are each independently CR12 or N, wherein R12 at each occurrence is H or a substituent selected from C1-20 alkyl and electron withdrawing groups. Preferably, the electron withdrawing group is F, Cl, Br or CN, more preferably F, Cl or CN; and most preferably CN.

C 1-20烴基R 12可選自C 1-20烷基;未經取代之苯基;及經一個或多個C 1-12烷基取代之苯基。 The C 1-20 alkyl group R 12 may be selected from C 1-20 alkyl groups; unsubstituted phenyl groups; and phenyl groups substituted by one or more C 1-12 alkyl groups.

在一特定較佳實施例中,X 7-X 10中之各者為CR 12且各R 12獨立地選自H或拉電子基團,較佳為H、F或CN。根據此實施例,X 8及X 9之R 12為拉電子基團,較佳為F或CN。 In a particularly preferred embodiment, each of X7 - X10 is CR12 and each R12 is independently selected from H or an electron withdrawing group, preferably H, F or CN. According to this embodiment, R12 of X8 and X9 is an electron withdrawing group, preferably F or CN.

視情況,式(II)之基團具有式(IIb): (IIb) 其中Ar 3為未經取代或經取代之單環或多環芳族或雜芳族基團。較佳地,Ar 3為未經取代或經一個或多個取代基取代之苯。Ar 3之取代基可選自如上文所描述之R 11,更佳為如上文所描述之R 12Optionally, the group of formula (II) has formula (IIb): (IIb) wherein Ar 3 is an unsubstituted or substituted monocyclic or polycyclic aromatic or heteroaromatic group. Preferably, Ar 3 is benzene which is unsubstituted or substituted with one or more substituents. The substituent of Ar 3 may be selected from R 11 as described above, more preferably R 12 as described above.

式(IXd)之示例性基團包括: Exemplary groups of formula (IXd) include:

式(IXe)之示例性基團包括: Exemplary groups of Formula (IXe) include:

式(IXq)之示例性基團為: ` Exemplary groups of formula (IXq) are: `

式(IXg)之示例性基團為: Exemplary groups of formula (IXg) are:

式(IXj)之示例性基團為: 其中Ak為C 1-12伸烷基鏈,其中一個或多個C原子可經O、S、NR 6、CO或COO置換;An為陰離子,視情況為-SO 3 -;且各苯環獨立地未經取代或經一個或多個選自參考R 3所描述之取代基的取代基取代。 Exemplary groups of formula (IXj) are: wherein Ak is a C 1-12 alkylene chain, one or more C atoms of which may be replaced by O, S, NR 6 , CO or COO; An is an anion, optionally -SO 3 - ; and each benzene ring is independently unsubstituted or substituted by one or more substituents selected from the substituents described with reference to R 3 .

式(IXm)之示例性基團為: Exemplary groups of formula (IXm) are:

式(IXn)之示例性基團為: Exemplary groups of formula (IXn) are:

式(IXo)之基團直接結合至經式-B(R 14) 2之基團取代的橋接基團B 1或B 2,其中R 14在每次出現時為取代基,視情況為C 1-20烴基;→為與硼原子-B(R 14) 2鍵結之鍵;且---為式(IXo)與橋接基團之間的C-C鍵。 The group of formula (IXo) is directly bonded to the bridging group B1 or B2 substituted by a group of formula -B( R14 ) 2 , wherein R14 is a substituent at each occurrence, optionally a C1-20 alkyl group; → is a bond to the boron atom -B( R14 ) 2 ; and --- is a CC bond between the group of formula (IXo) and the bridging group.

視情況,R 14係選自C 1-12烷基;未經取代之苯基;及經一個或多個C 1-12烷基取代之苯基。 Optionally, R 14 is selected from C 1-12 alkyl; unsubstituted phenyl; and phenyl substituted with one or more C 1-12 alkyl groups.

式(IXo)之基團、B 1或B 2基團及B 1或B 2之B(R 14) 2取代基可連接在一起形成5或6員環。 The group of formula (IXo), the group B1 or B2 and the B(R 14 ) 2 substituent of B1 or B2 may be linked together to form a 5- or 6-membered ring.

視情況式(IXo)之基團係選自: 有機電子裝置 The group of the formula (IXo) is selected from: Organic electronic devices

圖1示出根據本揭示之一些實施例的有機光響應裝置,較佳有機光偵測器。有機光響應裝置包含陰極103、陽極107及安置於陽極與陰極之間的本體異質接面層105。有機光響應裝置可支撐於基板101上,視情況支撐於玻璃或塑膠基板上。FIG1 shows an organic light responsive device, preferably an organic light detector, according to some embodiments of the present disclosure. The organic light responsive device comprises a cathode 103, an anode 107, and a bulk heterojunction layer 105 disposed between the anode and the cathode. The organic light responsive device can be supported on a substrate 101, optionally a glass or plastic substrate.

本體異質接面層包含式(I)化合物及供電子之化合物或由其組成。本體異質接面層包含一種或多種其他材料,例如一種或多種其他供電子材料及/或一種或多種其他受電子材料。The bulk heterojunction layer comprises or consists of a compound of formula (I) and an electron-donating compound. The bulk heterojunction layer comprises one or more other materials, such as one or more other electron-donating materials and/or one or more other electron-accepting materials.

在一些實施例中,供電子材料之重量比受電子材料之重量為約1:0.5至約1:2,較佳為約1:1.1至約1:2。In some embodiments, the weight ratio of the electron donating material to the electron accepting material is about 1:0.5 to about 1:2, preferably about 1:1.1 to about 1:2.

較佳地,供電子材料或各供電子材料與受電子材料或各受電子材料具有II型界面,亦即供電子材料或各供電子材料具有比受電子材料或各受電子材料之相應HOMO及LUMO能階更淺之HOMO及LUMO。較佳地,式(I)化合物具有比供電子材料之HOMO深至少0.05 eV,視情況深至少0.10 eV的HOMO能階。Preferably, the or each electron donating material and the or each electron accepting material have a type II interface, i.e. the or each electron donating material has a HOMO and a LUMO that are shallower than the corresponding HOMO and LUMO energy levels of the or each electron accepting material. Preferably, the compound of formula (I) has a HOMO energy level that is at least 0.05 eV deeper, and optionally at least 0.10 eV deeper, than the HOMO of the electron donating material.

視情況,供電子材料之HOMO能階與式(I)化合物的LUMO能階之間的間隙小於1.4 eV。Optionally, the gap between the HOMO energy level of the electron donating material and the LUMO energy level of the compound of formula (I) is less than 1.4 eV.

陽極及陰極中之各者可獨立地為單個導電層,或可包含複數個層。Each of the anode and the cathode may independently be a single conductive layer, or may include a plurality of layers.

陽極及陰極中之至少一者為透明的,使得入射於裝置上之光可達至本體異質接面層。在一些實施例中,陽極及陰極兩者皆為透明的。透明電極之透射率可根據與有機光偵測器一起使用之光源的發射波長來選擇。At least one of the anode and cathode is transparent so that light incident on the device can reach the bulk heterojunction layer. In some embodiments, both the anode and cathode are transparent. The transmittance of the transparent electrode can be selected based on the emission wavelength of the light source used with the organic photodetector.

圖1說明其中光響應裝置包含本體異質接面光活性層105之配置。在其他實施例中,光活性層包含受電子子層,該受電子子層包含安置於陽極與陰極之間的式(I)化合物或由其組成;及供電子子層,該供電子子層包含安置於陽極與受電子層之間且與受電子層直接接觸的一種或多種供電子材料或由其組成。Figure 1 illustrates a configuration in which the photoresponsive device comprises a bulk heterojunction photoactive layer 105. In other embodiments, the photoactive layer comprises an electron accepting sublayer comprising or consisting of a compound of formula (I) disposed between the anode and the cathode; and an electron donating sublayer comprising or consisting of one or more electron donating materials disposed between the anode and the electron accepting layer and in direct contact with the electron accepting layer.

圖1繪示其中陰極安置於基板與陽極之間的配置。在其他實施例中,陽極可安置於陰極與基板之間。Figure 1 shows a configuration in which the cathode is disposed between the substrate and the anode. In other embodiments, the anode may be disposed between the cathode and the substrate.

有機光響應裝置可包含除陽極、陰極及光活性層以外的層。在一些實施例中,電洞傳輸層及/或電子阻擋層安置於陽極與光活性層之間。在一些實施例中,電子傳輸層及/或電洞阻擋層安置於陰極與光活性層之間。在一些實施例中,功函數改質層安置於光活性層與陽極之間及/或光活性層與陰極之間。The organic photoresponsive device may include layers other than the anode, cathode, and photoactive layer. In some embodiments, the hole transport layer and/or the electron blocking layer are disposed between the anode and the photoactive layer. In some embodiments, the electron transport layer and/or the hole blocking layer are disposed between the cathode and the photoactive layer. In some embodiments, the work function modification layer is disposed between the photoactive layer and the anode and/or between the photoactive layer and the cathode.

基板可為(但不限於)玻璃或塑膠基板。基板可為無機半導體。在一些實施例中,基板可為矽。舉例而言,基板可為矽晶圓。在使用時,若入射光透射穿過基板且電極由基板支撐,則基板為透明的。 供電子材料 The substrate may be, but is not limited to, a glass or plastic substrate. The substrate may be an inorganic semiconductor. In some embodiments, the substrate may be silicon. For example, the substrate may be a silicon wafer. When in use, if incident light is transmitted through the substrate and the electrode is supported by the substrate, then the substrate is transparent. Electron Supply Material

如本文所描述之光活性層之示例性供電子材料揭示於例如WO2013/051676中,該案之內容以引用之方式併入本文中。Exemplary electron donating materials for the photoactive layer as described herein are disclosed, for example, in WO 2013/051676, the contents of which are incorporated herein by reference.

供電子材料可為非聚合或聚合材料。The electron donating material can be a non-polymeric or polymeric material.

在一較佳實施例中,供電子材料為有機共軛聚合物,其可為均聚物或共聚物,包括交替、無規或嵌段共聚物。共軛聚合物較佳為包含交替之供電子重複單元及受電子重複單元之供體-受體聚合物。In a preferred embodiment, the electron donating material is an organic conjugate polymer, which can be a homopolymer or a copolymer, including alternating, random or block copolymers. The conjugate polymer is preferably a donor-acceptor polymer comprising alternating electron donating repeating units and electron accepting repeating units.

較佳為非結晶或半結晶共軛有機聚合物。Preferably, it is a non-crystalline or semi-crystalline conjugate organic polymer.

另外較佳地,供電子聚合物為具有通常在2.5 eV與1.5 eV之間、較佳在2.3 eV與1.8 eV之間的帶隙之共軛有機聚合物。Also preferably, the electron donating polymer is a conjugated organic polymer having a band gap generally between 2.5 eV and 1.5 eV, preferably between 2.3 eV and 1.8 eV.

視情況,供電子聚合物具有距真空能階不超過5.5 eV之HOMO能階。視情況,供電子聚合物具有距真空能階至少4.1 eV之HOMO能階。作為例示性供電子聚合物,可提及選自共軛烴或雜環聚合物的聚合物,包括聚并苯、聚苯胺、聚甘菊環、聚苯并呋喃、聚茀、聚呋喃、聚茚茀、聚吲哚、聚苯、聚吡唑啉、聚芘、聚嗒 、聚吡啶、聚三芳基胺、聚(伸苯基乙烯)、聚(3-取代噻吩)、聚(3,4-雙取代噻吩)、聚硒吩、聚(3-取代硒吩)、聚(3,4-雙取代硒吩)、聚(二噻吩)、聚(三噻吩)、聚(二硒吩)、聚(三硒吩)、聚噻吩并[2,3-b]噻吩、聚噻吩并[3,2-b]噻吩、聚苯并噻吩、聚苯并[1,2-b:4,5-b']二噻吩、聚異苯并噻吩、聚(單取代吡咯)、聚(3,4-雙取代吡咯)、聚-1,3,4- 二唑、聚異苯并噻吩,其衍生物及共聚物。 Optionally, the electron donating polymer has a HOMO energy level of no more than 5.5 eV from the vacuum energy level. Optionally, the electron donating polymer has a HOMO energy level of at least 4.1 eV from the vacuum energy level. As exemplary electron donating polymers, there can be mentioned polymers selected from conjugated hydrocarbons or heterocyclic polymers, including polyacene, polyaniline, polyazulene, polybenzofuran, polyfluorene, polyfuran, polyindole, polyphenylene, polypyrazoline, polypyrene, polytantalum, polypyrrolidone ... , polypyridine, polytriarylamine, poly(phenylene vinylene), poly(3-substituted thiophene), poly(3,4-bissubstituted thiophene), polyselenophene, poly(3-substituted selenophene), poly(3,4-bissubstituted selenophene), poly(dithiophene), poly(terthiophene), poly(diselenophene), poly(triselenophene), polythieno[2,3-b]thiophene, polythieno[3,2-b]thiophene, polybenzothiophene, polybenzo[1,2-b:4,5-b']dithiophene, polyisobenzothiophene, poly(monosubstituted pyrrole), poly(3,4-bissubstituted pyrrole), poly-1,3,4- Oxadiazole, polyisobenzothiophene, their derivatives and copolymers.

供體聚合物之較佳實例為聚茀及聚噻吩之共聚物,其中之各者可經取代;及包含基於苯并噻二唑及基於噻吩之重複單元的聚合物,其中之各者可經取代。Preferred examples of the donor polymer are copolymers of polyfluorene and polythiophene, each of which may be substituted; and polymers comprising benzothiadiazole-based and thiophene-based repeating units, each of which may be substituted.

供體聚合物較佳為包含供體重複單元及受體重複單元之供體-受體(DA)共聚物。The donor polymer is preferably a donor-acceptor (DA) copolymer comprising a donor repeating unit and an acceptor repeating unit.

較佳供體單元係選自視情況經一個或多個如上文所描述之取代基R 11取代之噻吩;及式(X)、(XI)及(XII)之重複單元: (X) 其中: Y A在每次出現時獨立地為O、S或NR 55;Z A在每次出現時為O、CO、S、NR 55或C(R 54) 2;且R 51、R 54及R 55在每次出現時獨立地為H或取代基。 Preferred donor units are selected from thiophene, optionally substituted with one or more substituents R 11 as described above; and repeating units of formula (X), (XI) and (XII): (X) wherein: YA at each occurrence is independently O, S or NR55 ; ZA at each occurrence is O, CO, S, NR55 or C( R54 ) 2 ; and R51 , R54 and R55 at each occurrence are independently H or a substituent.

視情況,R 51在每次出現時獨立地選自H;F;C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 2、COO或CO置換且該烷基之一個或多個H原子可經F置換;及芳族或雜芳族基團Ar 3,其未經取代或經一個或多個取代基取代。 Optionally, R 51 is independently selected at each occurrence from H; F; C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 2 , COO or CO and one or more H atoms of the alkyl may be replaced by F; and aromatic or heteroaromatic groups Ar 3 which are unsubstituted or substituted by one or more substituents.

在一些實施例中,Ar 3可為芳族基團,例如苯基。Ar 3之一個或多個取代基若存在,則可選自C 1-12烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、COO或CO置換且該烷基之一個或多個H原子可經F置換。 In some embodiments, Ar 3 may be an aromatic group, such as a phenyl group. If present, one or more substituents of Ar 3 may be selected from C 1-12 alkyl groups, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , COO or CO and one or more H atoms of the alkyl group may be replaced by F.

較佳地,各R 51為H。 Preferably, each R 51 is H.

較佳地,各R 54係選自由以下組成之群: H; F; 直鏈、分支鏈或環狀C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 17、CO或COO置換,其中R 17為C 1-12烴基且該C 1-20烷基之一個或多個H原子可經F置換;及 式(Ak)u-(Ar 7)v之基團,其中Ak為C 1-20伸烷基鏈,其中一個或多個非相鄰C原子可經O、S、NR 6、CO或COO置換;u為0或1;Ar 7在每次出現時獨立地為芳族或雜芳族基團,其未經取代或經一個或多個取代基取代;且v至少為1,視情況1、2或3。 Preferably, each R 54 is selected from the group consisting of: H; F; a linear, branched or cyclic C 1-20 alkyl group, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 17 , CO or COO, wherein R 17 is a C 1-12 alkyl group and one or more H atoms of the C 1-20 alkyl group may be replaced by F; and a group of formula (Ak)u-(Ar 7 )v, wherein Ak is a C 1-20 alkyl chain, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , CO or COO; u is 0 or 1; Ar 7 is independently an aromatic or heteroaromatic group at each occurrence, which is unsubstituted or substituted by one or more substituents; and v is at least 1, and optionally 1, 2 or 3.

Ar 7之取代基若存在,較佳選自F;Cl;NO 2;CN;及C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、CO或COO置換且一個或多個H原子可經F置換。較佳地,Ar 7為苯基。 Substituents for Ar 7 , if present, are preferably selected from F; Cl; NO 2 ; CN; and C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , CO or COO and one or more H atoms may be replaced by F. Preferably, Ar 7 is phenyl.

較佳地,R 55為H或C 1-20烴基。 (XI) 其中R 18及R 19各自獨立地選自H;F;C 1-12烷基,其中一個或多個非相鄰、非末端C原子可經O、S、COO或CO置換且該烷基之一個或多個H原子可經F置換;或芳族或雜芳族基團Ar 6,其未經取代或經一個或多個選自F及C 1-12烷基之取代基取代,其中一個或多個非相鄰、非末端C原子可經O、S、COO或CO置換。 (XII) 其中Y 3為O、S或Se,較佳為S;R 5在每次出現時為H或取代基,更佳為H或如上文所描述之取代基R 11,最佳為H;且Q為C(R 21) 2或Si(R 21) 2,其中R 21在每次出現時為取代基,較佳為選自以下之取代基:C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 17置換,其中R 17為C 1-12烴基、COO或CO且該烷基之一個或多個H原子可經F置換;及芳族或雜芳族基團,較佳C 6-20芳基、更佳苯基,其未經取代或經一個或多個取代基取代。芳族或雜芳族基團R 21之取代基可選自如上文所描述之R 11Preferably, R 55 is H or C 1-20 alkyl. (XI) wherein R 18 and R 19 are each independently selected from H; F; C 1-12 alkyl, wherein one or more non-adjacent, non-terminal C atoms may be replaced by O, S, COO or CO and one or more H atoms of the alkyl may be replaced by F; or an aromatic or heteroaromatic group Ar 6 which is unsubstituted or substituted by one or more substituents selected from F and C 1-12 alkyl, wherein one or more non-adjacent, non-terminal C atoms may be replaced by O, S, COO or CO. (XII) wherein Y 3 is O, S or Se, preferably S; R 5 at each occurrence is H or a substituent, more preferably H or a substituent R 11 as described above, most preferably H; and Q is C(R 21 ) 2 or Si(R 21 ) 2 , wherein R 21 at each occurrence is a substituent, preferably a substituent selected from the following: C 1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 17 , wherein R 17 is C 1-12 alkyl, COO or CO and one or more H atoms of the alkyl may be replaced by F; and an aromatic or heteroaromatic group, preferably C 6-20 aryl, more preferably phenyl, which is unsubstituted or substituted by one or more substituents. Substituents for the aromatic or heteroaromatic group R 21 may be selected from those described above for R 11 .

較佳受體單元包括視情況經一個或多個取代基R 11取代之苯并噻二唑;及式(XIII)之重複單元: (XIII) 其中R 2如上文所描述;且Y 4為O、S或Se,較佳為S。 富勒烯 Preferred receptor units include benzothiadiazole optionally substituted with one or more substituents R 11 ; and repeating units of formula (XIII): (XIII) wherein R 2 is as described above; and Y 4 is O, S or Se, preferably S. Fullerene

在一些實施例中,式(I)化合物為如本文所描述之受電子子層或本體異質接面層的唯一受電子材料。In some embodiments, the compound of formula (I) is the sole electron-accepting material of an electron-accepting sublayer or bulk heterojunction layer as described herein.

在一些實施例中,受電子層或本體異質接面層含有式(I)化合物及一種或多種其他受電子材料。較佳其他受電子材料為富勒烯。式(I)化合物:富勒烯受體重量比可在約1:0.1-1:1範圍內,較佳在約1:0.1-1:0.5範圍內。In some embodiments, the electron accepting layer or bulk heterojunction layer contains a compound of formula (I) and one or more other electron accepting materials. Preferably, the other electron accepting material is fullerene. The weight ratio of the compound of formula (I): fullerene acceptor can be in the range of about 1:0.1-1:1, preferably in the range of about 1:0.1-1:0.5.

富勒烯可選自但不限於C 60、C 70、C 76、C 78及C 84富勒烯或其衍生物,包括但不限於PCBM型富勒烯衍生物(包括苯基-C 61-丁酸甲酯(C 60PCBM))、TCBM型富勒烯衍生物(例如甲苯基-C 61-丁酸甲酯(C 60TCBM))及ThCBM型富勒烯衍生物(例如噻吩基-C 61-丁酸甲酯(C 60ThCBM))。 The fullerene may be selected from, but not limited to, C 60 , C 70 , C 76 , C 78 and C 84 fullerenes or derivatives thereof, including, but not limited to, PCBM-type fullerene derivatives (including phenyl-C 61 -butyric acid methyl ester (C 60 PCBM)), TCBM-type fullerene derivatives (e.g., tolyl-C 61 -butyric acid methyl ester (C 60 TCBM)) and ThCBM-type fullerene derivatives (e.g., thienyl-C 61 -butyric acid methyl ester (C 60 ThCBM)).

富勒烯衍生物可具有式(V): (V) The fullerene derivative may have formula (V): (V)

其中A與富勒烯之C-C基團一起形成可未取代或經一個或多個取代基取代之單環或稠環基團。A and the C-C group of the fullerene together form a monocyclic or condensed ring group which may be unsubstituted or substituted with one or more substituents.

例示性富勒烯衍生物包括式(Va)、(Vb)及(Vc): (Va) (Vb) (Vc) 其中R 20-R 32各自獨立地為H或取代基。 Exemplary fullerene derivatives include formula (Va), (Vb) and (Vc): (Va) (Vb) (Vc) wherein R 20 to R 32 are each independently H or a substituent.

取代基R 20-R 32為視情況且獨立地在每次出現時選自由以下組成之群:芳基或雜芳基、視情況苯基,其可未經取代或經一個或多個取代基取代;及C 1-20烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、CO或COO置換且一個或多個H原子可經F置換。 The substituents R20 - R32 are optionally and independently at each occurrence selected from the group consisting of aryl or heteroaryl, optionally phenyl, which may be unsubstituted or substituted with one or more substituents; and C1-20 alkyl, wherein one or more non-adjacent C atoms may be replaced by O, S, NR6 , CO or COO and one or more H atoms may be replaced by F.

芳基或雜芳基之取代基在存在之情況下,視情況選自C 1-12烷基,其中一個或多個非相鄰C原子可經O、S、NR 6、CO或COO置換且一個或多個H原子可經F置換。 調配物 Substituents of the aryl or heteroaryl groups, when present, are optionally selected from C 1-12 alkyl groups, wherein one or more non-adjacent C atoms may be replaced by O, S, NR 6 , CO or COO and one or more H atoms may be replaced by F. Formulations

光活性層可藉由包括但不限於熱蒸發及溶液沉積法之任何製程來形成。The photoactive layer can be formed by any process including but not limited to thermal evaporation and solution deposition.

較佳地,受電子子層或本體異質接面層藉由沉積溶解或分散於溶劑或兩種或更多種溶劑之混合物中的調配物、接著蒸發一種或多種溶劑來形成,該調配物包含式(I)化合物及該層之任何其他組分,在本體異質接面層的情況下包括一種或多種供電子材料。調配物可藉由包括但不限於以下之任何塗佈或印刷方法來沉積:旋塗、浸塗、滾塗、噴塗、刮刀塗佈、線棒塗佈、狹縫塗佈、噴墨印刷、網板印刷、凹版印刷及柔性凸版印刷。Preferably, the electron acceptor layer or bulk heterojunction layer is formed by depositing a formulation dissolved or dispersed in a solvent or a mixture of two or more solvents, followed by evaporation of one or more solvents, the formulation comprising a compound of formula (I) and any other components of the layer, including one or more electron donating materials in the case of a bulk heterojunction layer. The formulation can be deposited by any coating or printing method including but not limited to spin coating, dip coating, roll coating, spray coating, doctor blade coating, wire rod coating, slit coating, inkjet printing, screen printing, gravure printing and flexographic printing.

調配物可包含兩種或更多種溶劑之混合物,較佳為包含至少一種經一個或多個如上文所描述之取代基取代之苯及一種或多種其他溶劑的混合物。一種或多種其他溶劑可選自酯,視情況為烷基或芳基羧酸之烷基酯或芳基酯,視情況為苯甲酸C 1-10烷基酯、苯甲酸苯甲酯或二甲氧基苯。在較佳實施例中,三甲苯與苯甲酸苯甲酯之混合物用作溶劑。在其他較佳實施例中,三甲苯與二甲氧基苯之混合物用作溶劑。 The formulation may comprise a mixture of two or more solvents, preferably a mixture comprising at least one benzene substituted with one or more substituents as described above and one or more other solvents. The one or more other solvents may be selected from esters, optionally alkyl or aryl esters of alkyl or aryl carboxylic acids, optionally C 1-10 alkyl benzoate, benzyl benzoate or dimethoxybenzene. In a preferred embodiment, a mixture of trimethylbenzene and benzyl benzoate is used as a solvent. In other preferred embodiments, a mixture of trimethylbenzene and dimethoxybenzene is used as a solvent.

調配物可包含除受電子材料、供電子材料及一種或多種溶劑之外的其他組分。作為此類組分之實例,可提及黏著劑、消泡劑、除氣劑、黏度增強劑、稀釋劑、助劑、流動改良劑、著色劑、染料或顏料、敏化劑、穩定劑、奈米粒子、表面活性化合物、潤滑劑、濕潤劑、分散劑及抑制劑。The formulation may contain other components in addition to the electron accepting material, the electron donating material and the one or more solvents. As examples of such components, there may be mentioned adhesives, defoamers, deaerators, viscosity enhancers, diluents, adjuvants, flow improvers, colorants, dyes or pigments, sensitizers, stabilizers, nanoparticles, surface active compounds, lubricants, wetting agents, dispersants and inhibitors.

光活性層形成於有機光響應裝置之陽極及陰極中之一者上方且陽極及陰極中之另一者形成於光活性層上方。 應用 The photoactive layer is formed on one of the anode and the cathode of the organic photoresponsive device and the other of the anode and the cathode is formed on the photoactive layer. Application

電路可包含連接至一個或多個用於向裝置施加反向偏壓之電壓源的OPD;經組態以量測光電流之裝置;及經組態以放大OPD之輸出信號的放大器。施加至光偵測器之電壓可為可變的。在一些實施例中,光偵測器在使用時可連續偏壓。The circuit may include an OPD connected to one or more voltage sources for applying a reverse bias to the device; a device configured to measure the photocurrent; and an amplifier configured to amplify the output signal of the OPD. The voltage applied to the photodetector may be variable. In some embodiments, the photodetector may be continuously biased when in use.

在一些實施例中,光偵測器系統包含本文所描述之複數個光偵測器,諸如相機之影像感測器。In some embodiments, a photodetector system includes a plurality of photodetectors as described herein, such as an image sensor of a camera.

在一些實施例中,感測器可包含依本文所描述之OPD及光源,其中該OPD經組態以接收自光源發射的光。在一些實施例中,光源具有至少1000 nm或至少1200 nm之峰值波長,視情況在1000-1500 nm之範圍內。In some embodiments, the sensor may include an OPD and a light source as described herein, wherein the OPD is configured to receive light emitted from the light source. In some embodiments, the light source has a peak wavelength of at least 1000 nm or at least 1200 nm, preferably in the range of 1000-1500 nm.

在一些實施例中,來自光源之光在到達OPD之前可能改變或可能不改變。舉例而言,光可在其到達OPD之前經反射、過濾、降頻轉換或升頻轉換。In some embodiments, the light from the light source may or may not be changed before it reaches the OPD. For example, the light may be reflected, filtered, down-converted, or up-converted before it reaches the OPD.

如本文所描述之有機光響應裝置可為有機光伏裝置或有機光偵測器。如本文所描述之有機光偵測器可用於廣泛範圍的應用中,該等應用包括但不限於偵測環境光之存在及/或亮度;及用於包含有機光偵測器及光源之感測器中。光偵測器可經組態以使得自光源發射之光入射至光偵測器上,且可偵測到光之波長及/或亮度之變化,該等變化例如由於藉由物體(例如,安置於光源與有機光偵測器之間的光徑中之樣品中的目標材料)對光的吸收、反射及/或發射所致。樣品可為非生物樣品,例如水樣品;或取自人類或動物個體之生物樣品。感測器可為但不限於氣體感測器、生物感測器、X射線成像裝置、影像感測器(諸如相機影像感測器)、運動感測器(例如用於安全性應用中)、接近感測器或指紋感測器。1D或2D光感測器陣列可包含影像感測器中之複數個如本文所描述之光偵測器。光偵測器可經組態以偵測自目標分析物發射的光,該目標分析物在光源照射後發射光,或與在光源照射後發射光之發光標籤結合。光偵測器可經組態以偵測由目標分析物或與其結合之發光標籤發射之光的波長。An organic photo-responsive device as described herein may be an organic photovoltaic device or an organic photodetector. An organic photodetector as described herein may be used in a wide range of applications, including but not limited to detecting the presence and/or brightness of ambient light; and in a sensor comprising an organic photodetector and a light source. The photodetector may be configured so that light emitted from the light source is incident on the photodetector, and changes in the wavelength and/or brightness of the light may be detected, such changes being due to, for example, absorption, reflection and/or emission of light by an object (e.g., a target material in a sample disposed in an optical path between the light source and the organic photodetector). The sample may be a non-biological sample, such as a water sample; or a biological sample taken from a human or animal individual. The sensor may be, but is not limited to, a gas sensor, a biosensor, an X-ray imaging device, an image sensor (such as a camera image sensor), a motion sensor (e.g., used in security applications), a proximity sensor, or a fingerprint sensor. A 1D or 2D photo sensor array may include a plurality of photodetectors as described herein in an image sensor. The photodetector may be configured to detect light emitted from a target analyte that emits light upon illumination by a light source, or is associated with a luminescent tag that emits light upon illumination by a light source. The photodetector may be configured to detect the wavelength of light emitted by a target analyte or a luminescent tag associated therewith.

如本文所描述之OPD之偵測表面積可根據期望應用來選擇。視情況,如本文所描述之OPD具有小於約3 cm 2、小於約2 cm 2、小於約1 cm 2、小於約0.75 cm 2、小於約0.5 cm 2或小於約0.25 cm 2之偵測表面積。視情況,各OPD可為OPD陣列之一部分,其中各OPD為具有如本文所描述之面積,視情況小於1 mm 2,視情況在0.5微米 2-900微米 2之範圍內的面積之陣列的像素。 實例量測 The detection surface area of an OPD as described herein can be selected based on the desired application. Optionally, an OPD as described herein has a detection surface area of less than about 3 cm2 , less than about 2 cm2 , less than about 1 cm2 , less than about 0.75 cm2 , less than about 0.5 cm2 , or less than about 0.25 cm2 . Optionally, each OPD can be part of an array of OPDs, wherein each OPD is a pixel of the array having an area as described herein, optionally less than 1 mm2 , optionally in the range of 0.5 microns2-900 microns2 . Example Measurements

除非另外陳述,否則如本文所描述之材料之HOMO及LUMO能階係由方波伏安法(SWV)所量測。Unless otherwise stated, the HOMO and LUMO energy levels of materials as described herein were measured by square wave voltammetry (SWV).

在SWV中,當工作電極與參考電極之間的電位隨時間經線性地掃描時,量測工作電極處之電流。正向脈衝與反向脈衝之間的差動電流作為電位之函數進行繪製以得到伏安圖。可使用CHI 660D恆電位器進行量測。In SWV, the current at the working electrode is measured as the potential between the working electrode and the reference electrode is swept linearly with time. The differential current between the forward pulse and the reverse pulse is plotted as a function of potential to obtain a voltammogram. The CHI 660D potentiostat can be used for measurement.

用以藉由SWV量測HOMO或LUMO能階之裝置可包含以下:含有含0.1 M三級丁基六氟磷酸銨之乙腈的電池;3 mm直徑玻璃碳工作電極;鉑相對電極及無洩漏Ag/AgCl參考電極。The apparatus used to measure the HOMO or LUMO energy level by SWV may include the following: a cell containing 0.1 M tertiary butylammonium hexafluorophosphate in acetonitrile; a 3 mm diameter glassy carbon working electrode; a platinum counter electrode and a leak-free Ag/AgCl reference electrode.

在實驗結束時,出於計算目的將二茂鐵直接添加至現有電池,其中針對二茂鐵相對於Ag/AgCl之氧化及還原使用循環伏安法(CV)來測定電位。At the end of the experiment, ferrocene was added directly to the existing cell for calculation purposes, where the potential for oxidation and reduction of ferrocene relative to Ag/AgCl was determined using cyclic voltammetry (CV).

將樣品溶解於甲苯(3 mg/ml)中,且以3000 rpm直接離心至玻璃碳工作電極上。 LUMO = 4.8-E二茂鐵(峰至峰平均值) - E樣品還原(峰最大值)。 HOMO = 4.8-E二茂鐵(峰至峰平均值) + E樣品氧化(峰最大值)。 The samples were dissolved in toluene (3 mg/ml) and centrifuged directly onto a glassy carbon working electrode at 3000 rpm. LUMO = 4.8-E ferrocene (peak-to-peak average) - E sample reduced (peak maximum). HOMO = 4.8-E ferrocene (peak-to-peak average) + E sample oxidized (peak maximum).

典型的SWV實驗係在15 Hz頻率下運作;25 mV波幅及0.004 V增量步驟。針對HOMO及LUMO資料兩者自3種新鮮離心薄膜樣品計算結果。A typical SWV experiment was run at 15 Hz frequency; 25 mV amplitude and 0.004 V increment step. Results were calculated for both HOMO and LUMO data from three freshly centrifuged film samples.

除非另外說明,否則吸收光譜使用Cary 5000 UV-VIS-NIR光譜儀來量測。為了對資料解析度進行最佳控制,使用具有可變狹縫寬度(降至0.01 nm)之用於擴展光度範圍的PbSmart NIR偵測器自175 nm至3300 nm獲得量測值。Unless otherwise stated, absorption spectra were measured using a Cary 5000 UV-VIS-NIR spectrometer. For optimal control over data resolution, measurements were acquired from 175 nm to 3300 nm using a PbSmart NIR detector with variable slit width (down to 0.01 nm) for extended photometric range.

除非另外說明,否則吸收值屬於溶液。藉由量測通過溶液樣品之透射輻射之強度來獲得吸收資料。相對於入射波長繪製吸收強度以產生吸收光譜。用於量測吸收率之方法可包含量測石英光析槽中之15 mg/ml溶液且與僅含有溶劑之光析槽進行比較。Unless otherwise stated, absorbance values are for solutions. Absorption data are obtained by measuring the intensity of transmitted radiation through a sample of a solution. The absorption intensity is plotted against the incident wavelength to produce an absorption spectrum. A method for measuring absorbance may include measuring a 15 mg/ml solution in a quartz cell and comparing it to a cell containing only solvent.

除非另外說明,否則本文所提供之溶液吸收資料係在甲苯溶液中量測的。 合成 Unless otherwise stated, the solution absorption data provided herein were measured in toluene solution. Synthesis

具有其中如以上所描述不存在Ar 1基團之供體基團D-1的式(I)化合物可根據以下通用流程1且遵循WO2021/079140(該案之內容以引用之方式併入本文中)中所闡述之方法製備,其中R'為C 1-12烷基: 通用流程1 Compounds of formula (I) having a donor group D-1 in which the Ar 1 group is absent as described above can be prepared according to the following general scheme 1 and following the methods described in WO2021/079140 (the contents of which are incorporated herein by reference), wherein R' is a C 1-12 alkyl group: General Scheme 1

其中存在至少一個Ar 1之供體基團D可根據通用流程2製備: 通用流程2 通用流程3 The donor group D wherein at least one Ar 1 is present can be prepared according to General Scheme 2: General Scheme 2 General process 3

含有雜芳族及伸乙烯基橋兩者之式(I)化合物可根據通用流程4製備。 通用流程4 模型資料 Compounds of formula (I) containing both heteroaromatic and vinylene bridges can be prepared according to General Scheme 4. General Scheme 4 Model data

例示性化合物之能階使用可購自Gaussian之Gaussian09軟體,使用具有B3LYP(泛函)之Gaussian09建模。結果闡述於表1中,其中S1f對應於自S1躍遷之振盪器強度(預測吸收強度)。 表1 The energy levels of the exemplary compounds were modeled using Gaussian09 software available from Gaussian using Gaussian09 with B3LYP (functional). The results are shown in Table 1, where S1f corresponds to the oscillator strength (predicted absorption strength) of the transition from S1. Table 1

表1展示對於X 1= O之情況,受體基團A對帶隙之影響。 結構 HOMO /eV LUMO /eV E g/nm S1f λ max / nm -5.22 -3.61 773 2.53 816 -5.60 -4.09 824 2.43 864 -5.45 -3.87 792 2.72 834 -5.39 -3.97 875 2.78 917 -5.68 -4.35 932 2.72 966 表2 Table 1 shows the effect of acceptor group A on the band gap for the case of X1 = O. Structure HOMO /eV LUMO /eV E g /nm S1f λ max / nm -5.22 -3.61 773 2.53 816 -5.60 -4.09 824 2.43 864 -5.45 -3.87 792 2.72 834 -5.39 -3.97 875 2.78 917 -5.68 -4.35 932 2.72 966 Table 2

表2展示對於X 1= S之情況,受體基團A對帶隙之影響。 結構 HOMO /eV LUMO /eV E g/nm S1f λ max / nm -5.31 -3.62 736 2.37 794 -5.68 -4.10 785 2.34 843 -5.52 -3.88 755 2.56 813 -5.47 -3.97 832 2.63 894 -5.76 -4.35 886 2.58 943 表3 Table 2 shows the effect of acceptor group A on the band gap for the case of X1 = S. Structure HOMO /eV LUMO /eV E g /nm S1f λ max / nm -5.31 -3.62 736 2.37 794 -5.68 -4.10 785 2.34 843 -5.52 -3.88 755 2.56 813 -5.47 -3.97 832 2.63 894 -5.76 -4.35 886 2.58 943 Table 3

表3展示對於X 1= Se之情況,受體基團A對帶隙之影響。 結構 HOMO /eV LUMO /eV E g/nm S1f λ max / nm -5.30 -3.61 733 2.28 795 -5.68 -4.09 782 2.24 845 -5.52 -3.87 751 2.45 815 -5.46 -3.97 829 2.54 895 -5.75 -4.35 883 2.48 946 表4 Table 3 shows the effect of acceptor group A on the band gap for the case of X 1 = Se. Structure HOMO /eV LUMO /eV E g /nm S1f λ max / nm -5.30 -3.61 733 2.28 795 -5.68 -4.09 782 2.24 845 -5.52 -3.87 751 2.45 815 -5.46 -3.97 829 2.54 895 -5.75 -4.35 883 2.48 946 Table 4

表4展示含有噻吩并吡 橋之化合物的建模帶隙。 結構 HOMO /eV LUMO /eV E g/nm S1f λ max / nm -5.69 -4.26 866 2.26 923 -5.48 -4.10 903 2.46 961 -5.75 -4.42 932 2.51 987 -5.77 -4.26 821 2.09 898 -5.55 -4.10 855 2.32 934 -5.82 -4.42 884 2.36 961 -5.77 -4.25 816 2.00 899 -5.55 -4.09 850 2.24 934 -5.82 -4.41 878 2.27 962 表5 Table 4 shows the content of thienopyrrolidone Modeled band gap of bridge compounds. Structure HOMO /eV LUMO /eV E g /nm S1f λ max / nm -5.69 -4.26 866 2.26 923 -5.48 -4.10 903 2.46 961 -5.75 -4.42 932 2.51 987 -5.77 -4.26 821 2.09 898 -5.55 -4.10 855 2.32 934 -5.82 -4.42 884 2.36 961 -5.77 -4.25 816 2.00 899 -5.55 -4.09 850 2.24 934 -5.82 -4.41 878 2.27 962 Table 5

表5展示僅存在一個Ar 1基團之化合物的建模帶隙。 結構 HOMO /eV LUMO /eV E g/nm S1f λ max / nm -5.18 -3.58 775 2.67 828 -5.59 -4.05 828 2.60 880 -5.63 -4.30 936 2.84 984 -5.69 -4.36 929 2.81 993 表6 Table 5 shows the modeled band gaps of compounds with only one Ar 1 group present. Structure HOMO /eV LUMO /eV E g /nm S1f λ max / nm -5.18 -3.58 775 2.67 828 -5.59 -4.05 828 2.60 880 -5.63 -4.30 936 2.84 984 -5.69 -4.36 929 2.81 993 Table 6

表6展示存在兩個Ar 1基團之化合物的建模帶隙。 結構 HOMO /eV LUMO /eV E g/nm S1f λ max / nm -5.15 -3.55 777 2.55 845 -5.49 -4.00 835 2.43 903 -5.57 -4.25 944 2.55 1014 -5.65 -4.30 920 2.80 1003 Table 6 shows the modeled band gaps of compounds with two Ar 1 groups present. Structure HOMO /eV LUMO /eV E g /nm S1f λ max / nm -5.15 -3.55 777 2.55 845 -5.49 -4.00 835 2.43 903 -5.57 -4.25 944 2.55 1014 -5.65 -4.30 920 2.80 1003

101:基板 103:陰極 107:陽極 105:本體異質接面層 101: substrate 103: cathode 107: anode 105: bulk heterojunction layer

所揭示之技術及附圖描述所揭示之技術的一些實施方式。 圖1為根據一些實施例之有機光響應裝置之示意圖。 圖式未按比例繪製且具有各種視點及視角。圖式為一些實施方式及實例。另外,出於論述所揭示技術之一些實施例的目的,一些組分及/或操作可分離為不同區塊或組合為單一區塊。此外,雖然該技術適於各種修改及替代形式,但具體實施例已在圖式中藉助於實例展示且在下文詳細描述。然而,不希望將該技術限於所描述之特定實施方式。相反,希望該技術涵蓋屬於如所附申請專利範圍所定義的技術範圍內之所有修改、等效物及替代方案。 The disclosed technology and the accompanying drawings describe some embodiments of the disclosed technology. FIG. 1 is a schematic diagram of an organic light responsive device according to some embodiments. The drawings are not drawn to scale and have various viewpoints and perspectives. The drawings are some embodiments and examples. In addition, for the purpose of discussing some embodiments of the disclosed technology, some components and/or operations may be separated into different blocks or combined into a single block. In addition, although the technology is suitable for various modifications and alternative forms, specific embodiments have been shown by way of example in the drawings and described in detail below. However, it is not desired to limit the technology to the specific embodiments described. Instead, it is desired that the technology cover all modifications, equivalents and alternatives that fall within the scope of the technology as defined in the attached application scope.

Claims (15)

一種式(I)化合物, (I) 其中: X 1為O、S、Se、NR 2或PR 2,其中R 2在每次出現時為H或取代基; Y 1為O、S或Se; Ar 1在每次出現時獨立地為未經取代或經取代之單環或多環芳基或雜芳基或不存在; R 1在每次出現時獨立地為取代基; B 1在每次出現時獨立地為橋接基團; f1及f2各為1; g至少為1;且 A在每次出現時獨立地為單價受電子基團。 A compound of formula (I), (I) wherein: X 1 is O, S, Se, NR 2 or PR 2 , wherein R 2 at each occurrence is H or a substituent; Y 1 is O, S or Se; Ar 1 at each occurrence is independently an unsubstituted or substituted monocyclic or polycyclic aromatic or heteroaromatic group or is absent; R 1 at each occurrence is independently a substituent; B 1 at each occurrence is independently a bridging group; f1 and f2 are each 1; g is at least 1; and A at each occurrence is independently a monovalent electron accepting group. 如請求項1之化合物,其中至少一個A為式(II)之受電子基團: (II) 其中: G為C=O、C=S、SO、SO 2、NR 33或C(R 33) 2,其中R 33為CN或COOR 40,其中R 40在每次出現時為H或取代基; R 3為H或取代基; Z各自獨立地為CN、CF 3或COOR 40,其中R 40在每次出現時為H或取代基;且 Ar 2為未經取代或經取代之單環或多環芳環或雜芳環。 The compound of claim 1, wherein at least one A is an electron accepting group of formula (II): (II) wherein: G is C=O, C=S, SO, SO 2 , NR 33 or C(R 33 ) 2 , wherein R 33 is CN or COOR 40 , wherein R 40 is H or a substituent at each occurrence; R 3 is H or a substituent; Z is each independently CN, CF 3 or COOR 40 , wherein R 40 is H or a substituent at each occurrence; and Ar 2 is an unsubstituted or substituted monocyclic or polycyclic aromatic ring or heterocyclic aromatic ring. 如請求項2之化合物,其中Ar 2係選自: 經至少一個CN取代基取代之苯;及 未經取代或經取代之單環或多環雜芳族基團。 The compound of claim 2, wherein Ar 2 is selected from: benzene substituted with at least one CN substituent; and an unsubstituted or substituted monocyclic or polycyclic heteroaromatic group. 如請求項3之化合物,其中該式(II)之基團具有式(IIa): (IIa) 其中X 7-X 10各自獨立地為CR 12或N,其中R 12在每次出現時為H或選自C 1-20烴基及拉電子基團之取代基,其限制條件為當X 7-X 10中之各者為CR 12時,則至少一個R 12為CN。 The compound of claim 3, wherein the group of formula (II) has formula (IIa): (IIa) wherein X7 - X10 are each independently CR12 or N, wherein R12 at each occurrence is H or a substituent selected from C1-20 alkyl and electron withdrawing groups, with the proviso that when each of X7 - X10 is CR12 , at least one R12 is CN. 如請求項3之化合物,其中該式(II)之基團具有式(IIb): (IIb) 其中Ar 3為未經取代或經取代之單環或多環芳族或雜芳族基團。 The compound of claim 3, wherein the group of formula (II) has formula (IIb): (IIb) wherein Ar 3 is an unsubstituted or substituted monocyclic or polycyclic aromatic or heteroaromatic group. 如請求項3之化合物,其中Ar 2為經至少一個CN取代基取代之苯。 The compound of claim 3, wherein Ar 2 is benzene substituted with at least one CN substituent. 如請求項1至6中任一項之化合物,其中B 1係選自未經取代或經取代之呋喃;未經取代或經取代之噻吩;或其稠合類似物。 The compound of any one of claims 1 to 6, wherein B 1 is selected from unsubstituted or substituted furan; unsubstituted or substituted thiophene; or a fused analog thereof. 如請求項7之化合物,其中B 1為式(III)之基團: (III) 其中Y 2為O、S或Se;且Ar 4為未經取代或經取代之單環或多環芳族或雜芳族基團。 The compound of claim 7, wherein B1 is a group of formula (III): (III) wherein Y 2 is O, S or Se; and Ar 4 is an unsubstituted or substituted monocyclic or polycyclic aromatic or heteroaromatic group. 如請求項8之化合物,其中式(III)為式(IIIa)之基團: (IIIa) 其中R 8在每次出現時為H或取代基。 The compound of claim 8, wherein formula (III) is a group of formula (IIIa): (IIIa) wherein R 8 at each occurrence is H or a substituent. 如請求項1至6中任一項之化合物,其中各Ar 1不存在。 The compound of any one of claims 1 to 6, wherein each Ar 1 is absent. 一種組合物,其包含如前述請求項中任一項之化合物及供電子材料。A composition comprising the compound of any of the preceding claims and an electron donating material. 一種調配物,其包含溶解於或分散於一種或多種溶劑中的如前述請求項中任一項之化合物或組合物。A formulation comprising a compound or composition as claimed in any of the preceding claims dissolved or dispersed in one or more solvents. 一種有機光響應裝置,其包含陽極、陰極及安置於該陽極與該陰極之間的光活性層,其中該光活性層包含如請求項12之組合物。An organic photoresponsive device comprises an anode, a cathode, and a photoactive layer disposed between the anode and the cathode, wherein the photoactive layer comprises the composition of claim 12. 一種光感測器,其包含光源及如請求項13之有機光偵測器,其中該有機光偵測器經組態以偵測自該光源發射之光。A photo sensor comprises a light source and an organic photodetector as claimed in claim 13, wherein the organic photodetector is configured to detect light emitted from the light source. 如請求項14之光感測器,其中該光源發射具有大於1000 nm之峰值波長的光。A photosensor as claimed in claim 14, wherein the light source emits light having a peak wavelength greater than 1000 nm.
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