TW202434869A - Flexible sensor - Google Patents

Abstract

A flexible sensor capable of being stretched from a first state to a second state is provided by the present disclosure. The flexible sensor includes a flexible substrate and a plurality of sensing elements. The flexible substrate includes a plurality of island portions and a plurality of bridge portions, wherein at least one of the bridge portions connects adjacent two of the island portions. The sensing elements are disposed on the island portions of the flexible substrate. The at least one of the bridge portions has a first length in the first state and has a second length in the second state, wherein the first length is different from the second length.

Description

Flex Sensor

The present disclosure relates to a flexible sensor, and more particularly to a flexible sensor having a patterned substrate.

Sensors (such as infrared heat sensors or light sensors) can be used as biosensors. However, existing sensors have poor flexibility, which limits the application scenarios of the sensors. Therefore, how to improve the flexibility of heat sensors is still an important issue in the field.

In some embodiments, the present disclosure provides a flexible sensor that can be stretched from a first state to a second state. The flexible sensor includes a stretchable substrate and a plurality of sensing elements. The stretchable substrate has a plurality of island portions and a plurality of bridge portions, wherein at least one of the bridge portions connects two adjacent island portions among the island portions. The sensing element is disposed on the island portion of the stretchable substrate. At least one of the bridge portions has a first length in the first state and a second length in the second state, and the first length is different from the second length.

The present disclosure can be understood by referring to the following detailed description and the accompanying drawings. It should be noted that, in order to make it easier for readers to understand and for the simplicity of the drawings, the various drawings in the present disclosure only depict a portion of the device, and the specific components in the drawings are not drawn according to the actual scale. In addition, the number and size of each component in the figure are only for illustration and are not used to limit the scope of the present disclosure.

Certain terms are used throughout this disclosure and the attached patent applications to refer to specific components. Those skilled in the art will appreciate that electronic device manufacturers may refer to the same component by different names. This document does not intend to distinguish between components that have the same function but different names.

In the following description and patent application, the words "including" and "comprising" are open-ended words and should be interpreted as "including but not limited to..."

It should be understood that when an element or film layer is referred to as being "disposed on" or "connected to" another element or film layer, it can be directly on or directly connected to the other element or film layer, or there may be an intervening element or film layer between the two (indirect situation). Conversely, when an element is referred to as being "directly" "on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two. When an element or film layer is referred to as being "electrically connected" to another element or film layer, it may be interpreted as being directly electrically connected or indirect electrically connected. The electrical connection or coupling described in the present disclosure may refer to direct connection or indirect connection. In the case of direct connection, the end points of the components on the two circuits are directly connected or connected to each other by a conductor segment, and in the case of indirect connection, there are switches, diodes, capacitors, inductors, resistors, other suitable components, or combinations of the above components between the end points of the components on the two circuits, but not limited to these.

Although the terms "first", "second", "third" ... can be used to describe a variety of components, the components are not limited to these terms. These terms are only used to distinguish a single component from other components in the specification. The same terms may not be used in the patent application, but may be replaced by first, second, third ... according to the order of the components declared in the patent application. Therefore, in the following specification, the first component may be the second component in the patent application.

In the present disclosure, the thickness, length and width may be measured by using an optical microscope, and the thickness or width may be measured by using a cross-sectional image under an electron microscope, but the present invention is not limited thereto.

In addition, any two values or directions used for comparison may have a certain error. The terms "approximately", "equal to", "equal" or "same", "substantially" or "approximately" are generally interpreted as being within plus or minus 20% of the given value, or within plus or minus 10%, plus or minus 5%, plus or minus 3%, plus or minus 2%, plus or minus 1% or plus or minus 0.5% of the given value.

In addition, the expressions “a given range is from a first value to a second value” and “a given range falls within the range from a first value to a second value” mean that the given range includes the first value, the second value and other values therebetween.

If the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by a person skilled in the art to which the present disclosure belongs. It is understood that these terms, such as terms defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present disclosure.

It should be noted that the following embodiments may replace, reorganize, or mix the technical features in several different embodiments to implement other embodiments without departing from the spirit of the present disclosure.

The electronic device disclosed herein may include a sensing device, such as a thermal sensor. The electronic device may be a bendable, flexible or stretchable electronic device. For example, the electronic device disclosed herein may include a flexible sensor. The electronic device disclosed herein may be applied to a display device, a backlight device, an antenna device, a splicing device or other suitable electronic devices, but is not limited thereto. The display device may, for example, include a laptop, a public display, a spliced display, a car display, a touch display, a television, a monitor, a smart phone, a tablet computer, a light source module, a lighting device or, for example, an electronic device applied to the above-mentioned products, but is not limited thereto. The antenna device may include a liquid crystal antenna device or other suitable antenna devices. The splicing device may, for example, include a display splicing device or an antenna splicing device, but is not limited thereto. The shape of the electronic device may be rectangular, circular, polygonal, a shape with curved edges or other suitable shapes. The electronic device may include an electronic unit, wherein the electronic unit may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, sensors, integrated circuits, etc. The diode may include a light-emitting diode or a photodiode or a variable capacitance diode. The light-emitting diode may, for example, include an organic light-emitting diode (OLED) or an inorganic light-emitting diode (in-organic light-emitting diode), and the inorganic light-emitting diode may, for example, include a sub-millimeter light-emitting diode (mini LED), a micro LED or a quantum dot LED, but is not limited thereto. It should be noted that the electronic device disclosed herein can be various combinations of the above devices, but is not limited thereto.

Please refer to Figures 1 to 3, Figure 1 is a schematic top view of the electronic device of the first embodiment of the present disclosure, Figure 2 is a schematic cross-sectional view of the electronic device of the first embodiment of the present disclosure along the tangent line A-A’, and Figure 3 is a schematic cross-sectional view of the electronic device of the first embodiment of the present disclosure along the tangent line B-B’. According to the present embodiment, the electronic device 100 may include a stretchable substrate FS, a circuit structure CS disposed on the stretchable substrate FS, and a plurality of sensing elements SE disposed on the stretchable substrate FS, but is not limited thereto. In the present embodiment, the electronic device 100 may include a flexible sensor FD. In this case, the sensing element SE may include any suitable thermal sensing element or light sensing element, and the circuit structure CS may include any suitable electronic element for driving the thermal sensing element or the light sensing element. In some embodiments, the sensing element SE may include other types of sensors. The following will take the flexible sensor FD including a temperature sensor (or heat sensor) as an example to explain the structure of each element and film layer of the flexible sensor FD.

The stretchable substrate FS may include a flexible substrate or at least a portion of a flexible substrate. The material of the stretchable substrate FS may include polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), other suitable materials, or a combination of the above materials. It should be noted that although the stretchable substrate FS is shown as a single layer in FIG. 2, the present embodiment is not limited to this. In some embodiments, the stretchable substrate FS may include a multi-layer structure.

The stretchable substrate FS may be a patterned substrate, including a plurality of island portions IP and a plurality of bridge portions BP, wherein at least one of the plurality of bridge portions BP may connect two adjacent island portions IP. Specifically, as shown in FIG1 , the island portion IP of the stretchable substrate FS may be connected to at least one bridge portion BP, and connected to another island portion IP through the bridge portion BP to which it is connected. As shown in FIG1 , the island portion IP may have a rectangular shape, and the bridge portion BP may have a strip shape, but is not limited thereto. In some embodiments, the island portion IP may have a circular shape or other suitable shapes. In some embodiments, the bridge portion BP may include any suitable non-strip shape having an arc-shaped edge or a non-pointed edge. The island portion IP may be configured to be capable of disposing a sensing element SE thereon. In the present embodiment, a plurality of sensing elements SE are disposed on a plurality of island portions IP. In other words, the sensing elements SE may be disposed corresponding to the island portions IP, or may be disposed on the island portions IP. Here, "the sensing elements SE are disposed corresponding to the island portions IP" may refer to the sensing elements SE overlapping or at least partially overlapping the island portions IP in the top-view direction of the flexible sensor FD (i.e., direction Z, which will not be elaborated hereafter). For example, in the present embodiment, the sensing elements SE may overlap the island portions IP in the top-view direction of the flexible sensor FD. The following definition of "corresponding" may refer to the above and will not be elaborated here. In the present embodiment, as shown in FIGS. 1 and 2 , each sensing element SE may correspond to one of the settings of the island portions IP, but is not limited thereto. In other words, a sensing element SE can be disposed on an island portion IP. The bridge portion BP can be configured to change the distance between the adjacent island portions IP to which it is connected. For example, when the flexible sensor FD is deformed (e.g., stretched), the bridge portion BP can be deformed so that the size (e.g., length) of the bridge portion BP can be changed due to the deformation, thereby changing the distance between the island portions IP, but not limited to this. On the other hand, through different patterned designs, bridge portions BP with different sizes can be designed, thereby changing the distance between adjacent island portions IP. In other words, the island portion IP can provide a supporting effect for the sensing element SE disposed thereon, while the bridge portion BP can provide a stretching effect for the flexible element FE itself.

In this embodiment, in the top view of the flexible sensor FD, the island portion IP of the stretchable substrate FS can be defined by the position where the pattern of the stretchable substrate FS has a sharp width change, but the present invention is not limited thereto. Specifically, in the top view of the flexible sensor FD (as shown in FIG. 1 ), the stretchable substrate FS can have a sharp width change at the edge EE of the island portion IP, and the area surrounded by the edge EE can be defined as the area of the island portion IP. For example, as shown in FIG1 , the width of the stretchable substrate FS drops sharply at the edge EE1, edge EE2, edge EE3 and edge EE4 of an island-shaped portion IP, and the area surrounded by the edge EE1, edge EE2, edge EE3 and edge EE4 can be defined as the area of an island-shaped portion IP (that is, the area where the width has not dropped is defined as the island-shaped portion IP), but not limited to this. In other embodiments, the area of the island-shaped portion IP can be defined in other suitable ways. After the area of the island-shaped portion IP is defined, the other parts of the stretchable substrate FS except the island-shaped portion IP can be defined as a bridge-shaped portion BP. Specifically, the portion of the stretchable substrate FS located between two adjacent island-shaped portions IP can be defined as a bridge-shaped portion BP. In other words, the two ends of a bridge-shaped portion BP may correspond to the edges EE of two adjacent island-shaped portions IP, respectively. For example, as shown in FIG. 1 and FIG. 2 , a bridge-shaped portion BP may be defined as a portion of the stretchable substrate FS between the edge EE5 and the edge EE6, but is not limited thereto.

The flexible sensor FD can be deformed by stretching the stretchable substrate FS. In this case, the flexible sensor FD can be stretched to adhere to any suitable surface, such as a curved surface. In this way, the application scenarios of the flexible sensor FD can be increased. Specifically, in the present embodiment, the flexible sensor FD can be stretched from a first state to a second state. The first state may refer to a state when the flexible sensor FD is not stretched, such as shown in the first state I of FIG. 1 . The second state may refer to a state after the flexible sensor FD is stretched in any manner, such as shown in the second state II of FIG. 1 . In other words, in the first state I, the stretchable substrate FS of the flexible sensor FD may not be stretched by an external force; and in the second state II, the stretchable substrate FS of the flexible sensor FD may be deformed by being stretched by an external force. As described above, since the stretchable substrate FS can be deformed by the deformation of the bridge-shaped portion BP, the length of the bridge-shaped portion BP can be changed by stretching the stretchable substrate FS. In this case, the length of a bridge-shaped portion BP in the first state I and the length of the bridge-shaped portion BP in the second state II may be different. For example, as shown in Figure 1, one of the bridge-shaped portions BP may have a first length L1 in the first state I, and the bridge-shaped portion BP may have a second length L2 in the second state II, wherein the first length L1 is different from the second length L2. In some embodiments, the second length L2 may be greater than the first length L1. In this embodiment, the length of the bridge-shaped portion BP may be defined, for example, in the following manner, but the present disclosure is not limited thereto. In one embodiment, in the top view of the flexible sensor FD, the length of a bridge-shaped portion BP can be defined as the distance between the edges EE to which the two ends of the bridge-shaped portion BP correspond. For example, the first length L1 of the bridge-shaped portion BP in FIG1 can be defined as the distance between the edge EE5 and the edge EE6. In some embodiments, in the cross-sectional view of the flexible sensor FD (as shown in FIG2 ), a bridge-shaped portion BP can be defined between the edges EE (e.g., the edge EE5 and the edge EE6) of two adjacent island-shaped portions IP, and the length of the bridge-shaped portion BP (e.g., the first length L1 or the second length L2) can be defined as the bottom length of the bridge-shaped portion BP, or the length of one side adjacent to the supporting membrane SUF. In one embodiment, the flexible sensor FD may further include a supporting film SUF, wherein a portion of the supporting film SUF corresponding to the bridge-shaped portion BP may be removed and formed into a section, as shown in FIG2 . In this case, in the cross-sectional view of the flexible sensor FD, the length of the bridge-shaped portion BP may also be defined as the distance between the cross sections of the supporting film SUF. In other embodiments, the length of the bridge-shaped portion BP may be defined in other suitable ways, and the present disclosure is not limited thereto.

It should be noted that the shape of the stretchable substrate FS shown in FIG. 1 is merely exemplary and the present disclosure is not limited thereto.

According to the present embodiment, the flexible sensor FD may include at least one opening area OPR. Specifically, the areas corresponding to the island-shaped portion IP and the bridge-shaped portion BP in the flexible sensor FD may be defined first, and other areas of the flexible sensor FD except the above-mentioned areas may be defined as the opening area OPR, but not limited thereto. On the other hand, the area circled by the adjacent island-shaped portion IP and the bridge-shaped portion BP may also be defined as the opening area OPR. In the present embodiment, as shown in FIG. 1 , the stretchable substrate FS may be patterned to form a plurality of island-shaped portions IP and a plurality of bridge-shaped portions BP, and a plurality of openings OP1 may be formed in the stretchable substrate FS in the patterning process of the stretchable substrate FS. Specifically, a whole material layer of the stretchable substrate FS may be provided first, and a portion of the material layer of the stretchable substrate FS corresponding to the opening region OPR of the flexible sensor FD may be removed to form the opening OP1, thereby forming the stretchable substrate FS, but the present invention is not limited thereto. In this case, the opening OP1 may correspond to the opening region OPR.

In the top view of the flexible sensor FD, the opening area OPR of the flexible sensor FD may be surrounded by a plurality of the island portions IP and the bridge portions BP. For example, as shown in FIG1 , the opening area OPR may be surrounded by four island portions IP and four bridge portions BP, or the range of the opening area OPR may be surrounded by four island portions IP and four bridge portions BP, but the present invention is not limited thereto. In this case, four island portions IP may be arranged around one opening area OPR. It should be noted that the above-mentioned positional relationship between the opening area OPR and the island portions IP and the bridge portions BP is merely exemplary, and the present disclosure is not limited thereto. In other embodiments, the stretchable substrate FS may have different shapes, and the number of island portions IP and bridge portions BP around the opening area OPR may depend on the shape of the stretchable substrate FS.

2 and 3 show schematic cross-sectional views of the flexible sensor FD. Specifically, FIG2 shows a cross-sectional view of the flexible sensor FD along a tangent (i.e., tangent A-A’) passing through the island portion IP and the bridge portion BP, and FIG3 shows a cross-sectional view of the flexible sensor FD along a tangent (i.e., tangent B-B’) passing through the island portion IP and the opening area OPR. In detail, FIG2 shows a bridge portion BP of the stretchable substrate FS and two adjacent island portions IP connected to each other through the bridge portion BP. In addition, as shown in FIG3, since a portion of the stretchable substrate FS of the present embodiment corresponding to the opening area OPR can be removed, the stretchable substrate FS may include an opening corresponding to the opening area OPR, i.e., the above-mentioned opening OP1.

As shown in FIG. 2 (and FIG. 3 ), the circuit structure CS may be disposed on the stretchable substrate FS. In the present embodiment, the circuit structure CS may be disposed corresponding to the island-shaped portion IP of the stretchable substrate FS, or the circuit structure CS may be disposed on the island-shaped portion IP. Specifically, the circuit structure CS may include a plurality of sub-circuit structures SC, each corresponding to being disposed on the surface of one of the island-shaped portions IP. In other words, a sub-circuit structure SC may be disposed on the surface of an island-shaped portion IP. In the present embodiment, the circuit structure CS may be formed into a plurality of sub-circuit structures SC through a patterning process. The circuit structure CS may include various wires, circuits, active elements and/or passive elements that can be applied to the flexible sensor FD. For example, the circuit structure CS may include a driving unit DU, wherein the driving unit DU may be electrically connected to any suitable electronic element in the flexible sensor FD. For example, the driving unit DU may be electrically connected to the sensing element SE, thereby driving the sensing element SE to which it is electrically connected, but the present invention is not limited thereto. The driving unit DU may, for example, include a thin film transistor (TFT), but the present invention is not limited thereto. Specifically, the circuit structure CS of the present embodiment may include a semiconductor layer SM, a conductive layer M1, and a conductive layer M2, wherein the semiconductor layer SM may form a channel region CR, a source region SR, and a drain region DR of the driving unit DU, and the conductive layer M1 may form a gate electrode GE of the driving unit DU. The conductive layer M2 may be located on the conductive layer M1, and may, for example, form a source electrode SOE and a drain electrode DOE electrically connected to the source region SR and the drain region DR, respectively. The semiconductor layer SM may include a semiconductor material. The semiconductor material may include, for example, silicon or a metal oxide, such as a low temperature polysilicon (LTPS) semiconductor, an amorphous silicon (a-Si) semiconductor, an indium gallium zinc oxide (IGZO) semiconductor, or a combination thereof, such as a low temperature polysilicon oxide (LTPO), but not limited thereto. The conductive layer M1 and the conductive layer M2 may include any suitable conductive material, such as a metal material, but not limited thereto. As shown in FIG2 , the circuit structure CS of the present embodiment may further include an insulating layer IL1 disposed on the stretchable substrate FS, an insulating layer IL2 located between the semiconductor layer SM and the conductive layer M1, and an insulating layer IL3 located between the conductive layer M1 and the conductive layer M2. The insulating layer IL1, the insulating layer IL2, and the insulating layer IL3 may include any suitable insulating material, such as an organic insulating material or an inorganic insulating material. In some embodiments, the insulating layer IL1 may serve as a buffer layer. The insulating layer IL2 may, for example, be a gate insulating layer in the drive unit DU. It should be noted that the structure of the circuit structure CS shown in FIG. 2 (and FIG. 3 ) is merely exemplary, and the present embodiment is not limited thereto.

Specifically, a continuous circuit structure CS may be formed on a stretchable substrate FS, and then a patterning process may be performed on the circuit structure CS to form a plurality of sub-circuit structures SC corresponding to the island-shaped portion IP. In the present embodiment, each of the sub-circuit structures CS may include at least one driving unit DU, and the driving unit DU in the sub-circuit structure CS may be electrically connected to the sensing element SE corresponding to the sub-circuit structure. In detail, the driving unit DU in a sub-circuit structure CS may be electrically connected to the sensing element SE disposed on the island-shaped portion where the sub-circuit structure CS is located. For example, as shown in FIG. 2 , in this embodiment, one sensing element SE may be disposed on one island-shaped portion IP, and the sub-circuit structure SC disposed on the surface of the island-shaped portion IP may include at least one driving unit DU (for example, one, but not limited thereto), electrically connected to the sensing element SE. In other embodiments, when multiple sensing elements SE are disposed on one island-shaped portion IP, the sub-circuit structure SC disposed on the surface of the island-shaped portion IP may include a plurality of driving units DU, each electrically connected to the sensing elements SE.

According to the present embodiment, as shown in FIGS. 2 and 3 , the circuit structure CS may not be arranged corresponding to the opening area OPR and the bridge-shaped portion BP of the stretchable substrate FS. It should be noted that the “circuit structure CS does not correspond to the bridge-shaped portion BP and the opening area OPR” herein may include a situation where at least one of the insulating layer and the conductive layer of the circuit structure CS does not correspond to the bridge-shaped portion BP and the opening area OPR. For example, as shown in FIGS. 2 and 3 , the driving unit DU or other active elements in the circuit structure CS may not correspond to the bridge-shaped portion BP and the opening area OPR. In addition, as shown in FIG. 2 , the insulating layer (e.g., the insulating layer IL1 and the insulating layer IL2) in the circuit structure CS may not correspond to the bridge-shaped portion BP. Specifically, in the patterning process of the circuit structure CS of the present embodiment, the portions of the insulating layer IL1 and the insulating layer IL2 in the circuit structure CS corresponding to the bridge portion BP may be removed, but not limited thereto. Furthermore, as shown in FIG. 3 , the conductive layer (including the conductive layer M1 and the conductive layer M2, but not limited thereto) and the insulating layer (including the insulating layer IL1, the insulating layer IL2, and the insulating layer IL3, but not limited thereto) in the circuit structure CS may not be arranged corresponding to the opening region OPR, but not limited thereto. In some embodiments, a portion of the film layer in the circuit structure CS may be arranged corresponding to the opening region OPR. By making the circuit structure CS not correspond to the bridge portion BP and/or the opening region OPR, the possibility of damage to the circuit structure CS when the flexible sensor FD is deformed can be reduced, thereby improving the reliability of the flexible sensor FD.

According to the present embodiment, the flexible sensor FD may include at least one connection line CW, wherein the connection line CW may electrically connect the sensing elements SE respectively located on two adjacent island portions IP, thereby transmitting electrical signals between the sensing elements SE on different island portions IP. Specifically, the connection line CW may be disposed on at least one bridge portion BP of the stretchable substrate FS, and may extend on the at least one bridge portion BP. Since the bridge portion BP may connect two adjacent island portions IP, and the connection line CW may extend on the bridge portion BP, the two ends of the connection line CW may extend to the two adjacent island portions IP, respectively, and be electrically connected to the sensing elements SE on the two adjacent island portions IP, respectively. Specifically, the two ends of the connection line CW can be electrically connected to the drive units DU located on the two adjacent island-shaped parts IP, and the drive units DU located on the two adjacent island-shaped parts IP can be electrically connected to the sensing elements SE arranged on the two adjacent island-shaped parts IP. In this way, the sensing elements SE on different island-shaped parts IP can be electrically connected through the connection line CW. FIG1 exemplarily shows the situation where the connection line CW extends on the bridge-shaped part BP, but the number and shape of the connection line CW are not limited to those shown in FIG1.

In the present embodiment, the connection line CW may include a signal line electrically connected to the drive unit DU, other suitable routing in the flexible sensor FD, or a combination of the above, but is not limited thereto. For example, as shown in FIG. 1 , the connection line CW may include a scanning line SL and/or a data line DL. In the present embodiment, a scanning line SL may extend on a plurality of bridge portions BP, thereby extending through a plurality of island portions IP. The scanning line SL may extend generally in one direction, such as direction X, but is not limited thereto. In this case, the scanning line SL may pass through a plurality of island portions IP arranged along direction X. When the scanning line SL passes through an island portion IP, it may be electrically connected to the drive unit DU on the island portion IP, for example, electrically connected to the gate electrode GE of the drive unit DU. In other words, in the present embodiment, a scanning line SL may be electrically connected to the gate electrode GE of the driving unit DU on a plurality of island-shaped portions IP arranged along the direction X, but the present invention is not limited thereto. Similarly, in the present embodiment, a data line DL may extend on a plurality of bridge-shaped portions BP, thereby extending through a plurality of island-shaped portions IP. The data line DL may extend substantially along a direction, such as direction Y, but the present invention is not limited thereto. In this case, the data line DL may pass through a plurality of island-shaped portions IP arranged along the direction Y, and be electrically connected to the driving units DU on the island-shaped portions IP, for example, electrically connected to the source electrodes DOE of the driving units DU, but the present invention is not limited thereto.

In some embodiments, the connection line CW may further include a bias line BL, wherein the bias line BL may extend on the bridge portion BP to electrically connect the bias electrodes BE of the sensing elements SE on different island portions IP (details are described below), but the present invention is not limited thereto.

According to this embodiment, as shown in Figure 2, since the circuit structure CS may not be set corresponding to the bridge-shaped part BP of the stretchable substrate FS, the connecting wire CW may be directly set on the bridge-shaped part BP, that is, the connecting wire CW may directly contact the bridge-shaped part BP.

In some embodiments, as shown in FIG. 2 , a plurality of connection wires CW, such as a connection wire CW1 and a connection wire CW2, may be disposed on a bridge-shaped portion BP, wherein the connection wires CW may be located at different layers, or may be formed by different conductive layers. For example, the connection wire CW1 may be in the same layer as the gate electrode GE, or may be formed by the conductive layer M1; the connection wire CW2 may be in the same layer as the source electrode DOE and/or the drain electrode SOE, or may be formed by the conductive layer M2, but the present invention is not limited thereto. The connection wire CW1 may be formed in the same process as the gate electrode GE, and the connection wire CW2 may be formed in the same process as the source electrode SOE and/or the drain electrode DOE, but the present invention is not limited thereto. The connection line CW1 may be, for example, the scanning line SL mentioned above, and the connection line CW2 may be, for example, the data line DL mentioned above, but is not limited thereto. In this case, the connection line CW1 may be directly arranged on the bridge-shaped portion BP, that is, the connection line CW1 directly contacts the bridge-shaped portion BP of the stretchable substrate FS. The connection line CW2 is arranged on the connection line CW1. In addition, at least one insulating layer may be arranged between the connection line CW1 and the connection line CW2, such as, but not limited to, the insulating layer IL3 mentioned above. The insulating layer IL3 may isolate the connection line CW1 from the connection line CW2. Specifically, the insulating layer IL3 disposed between the conductive layer M1 and the conductive layer M2 in the circuit structure CS may extend to the bridge portion BP and be disposed between the connection line CW1 and the connection line CW2, but the present invention is not limited thereto. Specifically, the connection line CW1 disposed on the bridge portion BP may be formed in the process of forming the conductive layer M1 (or the gate electrode GE), and when the insulating layer IL3 covering the conductive layer M1 is formed, the insulating layer IL3 may extend to the bridge portion BP and cover the connection line CW1. In this way, in the process of forming the conductive layer M2 (or the source electrode SOE/drain electrode DOE), a connection line CW2 disposed on the insulating layer IL3 can be formed, so that the insulating layer IL3 can isolate the connection line CW1 and the connection line CW2. It should be noted that in some embodiments, the connection line CW1 and the connection line CW2 can be provided with other insulating layers, and are not limited to the insulating layer IL3. In addition to the above-mentioned film layers, other film layers of the circuit structure CS (such as the insulating layer IL1, the insulating layer IL2, the semiconductor layer SM, etc.) may not be provided corresponding to the bridge portion BP. In this way, the flexibility of the flexible sensor FD can be improved, or the possibility of the circuit structure CS being broken when the flexible sensor FD is deformed can be reduced.

In some embodiments, only one connection line CW (eg, connection line CW1, connection line CW2, or one of other connection lines CW) may be disposed on a bridge-shaped portion BP, and the connection line CW may be directly disposed on the bridge-shaped portion BP, ie, directly contact the bridge-shaped portion BP.

According to the present embodiment, the flexible sensor FD may further include an organic insulating layer OIL, wherein the organic insulating layer OIL is disposed on the circuit structure CS. Specifically, as shown in FIG. 2 (and FIG. 3 ), the organic insulating layer OIL may be disposed between the circuit structure CS and the sensing element SE. The organic insulating layer OIL may include any suitable organic insulating material. The organic insulating material may include epoxy resin, acrylic resin (e.g., polymethyl methacrylate (PMMA)), benzocyclobutene (BCB), polyimide and polyester, polydimethylsiloxane (PDMS), other suitable protective materials or a combination thereof, but is not limited thereto.

According to this embodiment, as shown in FIG. 2 , the organic insulating layer OIL may be disposed on the bridge-shaped portion BP, or in other words, may be disposed corresponding to the bridge-shaped portion BP. Specifically, as described above, since the circuit structure CS may not be disposed corresponding to the bridge-shaped portion BP, the organic insulating layer OIL may be disposed on the bridge-shaped portion BP and cover the connection line CW, for example, covering the connection line CW2. Through the above design, the organic insulating layer OIL may provide a protective effect for the connection line CW. In addition, since the organic insulating layer OIL may have better elasticity, the influence of the organic insulating layer OIL on the flexibility of the flexible sensor FD may be reduced. In some embodiments, the organic insulating layer OIL may not be provided corresponding to the bridge portion BP.

According to the present embodiment, as shown in FIG3 , the organic insulating layer OIL may not be disposed corresponding to the opening region OPR of the flexible sensor FD. In this case, the organic insulating layer OIL may be a patterned film layer, and the organic insulating layer OIL may include an opening OP2 corresponding to the opening region OPR. In some embodiments, the organic insulating layer OIL may be disposed corresponding to the opening region OPR. In this case, the organic insulating layer OIL may extend downward and fill the opening OP1 of the stretchable substrate FS.

As shown in FIG. 2 (or FIG. 3), in the present embodiment, the circuit structure CS (or sub-circuit structure SC) may include at least one groove RS. For example, each sub-circuit structure SC of the circuit structure CS may include a groove RS, but is not limited thereto. In some embodiments, some sub-circuit structures SC may include grooves RS, while other sub-circuit structures SC may not include grooves RS. The groove RS may be formed by removing at least a portion of the insulating layer of the circuit structure CS (or sub-circuit structure SC). For example, as shown in FIG. 2, the groove RS of the present embodiment may be formed by removing a portion of the insulating layer IL1, the insulating layer IL2, and the insulating layer IL3, but is not limited thereto. In some embodiments, the groove RS may be formed by removing a portion of the insulating layer IL2 and the insulating layer IL3. In some embodiments, the groove RS may be formed by shifting a portion of the insulating layer IL3. According to the present embodiment, in the top view of the flexible sensor FD (as shown in FIG. 1 ), the groove RS may be disposed along the edge of the island-shaped portion IP. For example, the groove RS may be disposed along the edge EE1, the edge EE2, the edge EE3, and the edge EE4 of the island-shaped portion IP, but is not limited thereto. In the top view of the flexible sensor FD, the groove RS disposed on an island-shaped portion IP may surround the sensing element SE and the driving unit DU disposed on the island-shaped portion IP. In other words, in the top view direction of the flexible sensor FD, the sensing element SE and the driving unit DU may be located within the range enclosed by the groove RS and may not overlap the groove RS. It should be noted that the above “the groove RS surrounds the driving unit DU” may include a situation where the groove RS at least surrounds the semiconductor layer SM of the driving unit DU, but is not limited thereto.

According to the present embodiment, the organic insulating layer OIL may be filled in the groove RS, and a portion of the organic insulating layer OIL filled in the groove RS may constitute the anti-crack structure AC, but is not limited thereto. In other words, the anti-crack structure AC is disposed in the groove RS, and the material of the anti-crack structure AC may include an organic insulating material (i.e., the material of the organic insulating layer OIL). In this case, the anti-crack structure AC may be disposed along the edge of the island portion IP, and further, in the top view of the flexible sensor FD, the anti-crack structure AC may surround the sensing element SE and the driving unit DU. The groove RS may be used to block cracks to reduce the possibility that the cracks extend inward from the groove RS and reach the sensing element SE and/or the driving unit DU. In addition, since the anti-fracture structure AC including an organic insulating material can be provided in the groove RS, the possibility of cracks in the insulating layer of the circuit structure CS can be reduced, thereby improving the reliability of the flexible sensor FD. It should be noted that although FIG. 1 shows a structure in which the anti-fracture structure AC includes an annular structure and overlaps the connection line CW, the present disclosure is not limited to this. In some embodiments, in a top view of the flexible sensor FD, the anti-fracture structure AC does not overlap the connection line CW. In this case, the anti-fracture structure AC may include a plurality of parts, and these parts do not overlap the connection line CW.

The sensing element SE may correspond to the island portion IP and be disposed on the organic insulating layer OIL. In the present embodiment, the sensing element SE may include a hinge arm HG, a fixing post FP, an absorber AB, and a thermistor TH, but is not limited thereto. The hinge arm HG is disposed on both sides of the absorber AB and is connected to the absorber AB. The thermistor TH is disposed on the absorber AB. The hinge arm HG located on one side of the absorber AB may have an extension EP1, wherein the extension EP1 may be electrically connected to a contact CT, and electrically connected to the drive unit DU through the contact CT. For example, the flexible sensor FD may include a conductive layer M3 disposed on an organic insulating layer OIL, wherein the conductive layer M3 may form a contact CT. The contact CT may fill a through hole V1 passing through the organic insulating layer OIL and contact the drive unit DU, for example, contact the drain electrode DOE of the drive unit DU, thereby being electrically connected to the drive unit DU. The extension EP1 of the hinge arm HG may contact the contact CT, thereby electrically connecting the sensing element SE to the contact CT. In this way, the sensing element SE may be electrically connected to the drive unit DU. The chain arm HG located on the other side of the absorber AB may have an extension portion EP2, wherein the extension portion EP2 may be electrically connected to a bias electrode BE. The bias electrode BE may be formed, for example, by a conductive layer M3 disposed on the organic insulating layer OIL, but is not limited thereto. The bias electrode BE may provide a fixed voltage, or in other words, provide an electrical signal, and when the absorber AB receives thermal radiation, the resistance value of the thermistor TH may change, thereby changing the received electrical signal, thereby achieving the function of sensing heat. The fixing post FP may be conformally disposed on the extension portion EP1 and the extension portion EP2 of the chain arm HG, but is not limited thereto. The fixing post FP may be used to fix the chain arm HG, thereby increasing the reliability of the sensing element SE. The absorber AB may include titanium (Ti), titanium nitride (TiN), other suitable materials or a combination of the above materials. The thermistor TH may include vanadium oxide (VO _x ), amorphous silicon (a-Si), other suitable materials or a combination of the above materials. The hinge arm HG may include titanium nitride, titanium, copper (Cu), aluminum (Al), other suitable materials or a combination of the above materials. It should be noted that the sensing element SE may include any suitable structure and is not limited to the above structure.

As described above, the connection line CW of the flexible sensor FD may further include a bias line BL, wherein the bias line BL may be disposed on the bridge portion BP and electrically connected between the bias electrodes BE on different island portions IP, but is not limited thereto. The bias line BL may be located on the same layer as the bias electrode BE (i.e., the conductive layer M3) or may be formed by the same conductive layer. The bias line BL may be formed in the same process as the bias electrode BE. As shown in FIG. 2 , in some embodiments, the connection line CW may further include a connection line CW3, wherein the connection line CW3 may be disposed on the organic insulating layer OIL. In other words, the connection line CW2 and the connection line CW3 may be isolated by the organic insulating layer OIL. The connection line CW3 may be, for example, the bias line BL mentioned above, but is not limited thereto. In other words, the connection line CW3 may be located in the same layer as the bias electrode BE, or may be formed by the conductive layer M3.

According to the present embodiment, the flexible sensor FD may further include an optical element layer OEL disposed on the sensing element SE. Specifically, as shown in FIG. 2 (or FIG. 3 ), the optical element layer OEL may include a plurality of optical elements OE, and the optical elements OE may respectively correspond to one of the settings of the island-shaped portion IP. In other words, one optical element OE may be disposed on one island-shaped portion IP, but the present invention is not limited thereto. In the present embodiment, the optical element OE may include a non-IR cut filter CFR, an anti-reflection layer ARF, and an insulating layer IN, but the present invention is not limited thereto. The setting of the optical element OE may improve the accuracy of the sensing element SE. Specifically, the non-infrared cut-off filter CFR can be used to filter non-infrared radiation, thereby reducing the noise received by the sensing element SE, and the anti-reflection layer ARF can reduce the reflection of infrared rays. The non-infrared cut-off filter CFR of the present embodiment can be, for example, cap-shaped. For example, the non-infrared cut-off filter CFR can include a horizontal portion HP1 and a protrusion PP1 protruding from the horizontal portion HP1, but the present invention is not limited thereto. The anti-reflection layer ARF can be disposed on both sides of the non-infrared cut-off filter CFR. Specifically, the anti-reflection layer ARF can be disposed on both sides of the horizontal portion HP1 of the non-infrared cut-off filter CFR. For example, the anti-reflection layer ARF can be disposed on the surface S1 and the surface S2 of the horizontal portion HP1 of the non-infrared cut-off filter CFR, respectively, but the present invention is not limited thereto. The insulating layer IN may be disposed on the anti-reflection layer ARF located on one side of the surface S2 of the non-infrared cut filter CFR. The non-infrared cut filter CFR may include, for example, silicon, but is not limited thereto. The insulating layer IN may include, for example, polyimide, but is not limited thereto.

According to the present embodiment, the optical element OE may be first formed on a carrier board and then disposed on the island portion IP of the stretchable substrate FS in an aligned bonding manner. Specifically, as shown in FIG. 2 , the flexible sensor FD may include a sealing metal layer SML1 disposed on the organic insulating layer OIL and a sealing material layer SSL1 disposed on the sealing metal layer SML1. The sealing metal layer SML1 and the sealing material layer SSL1 may be formed on the organic insulating layer OIL, for example, after the sensing element SE is disposed, but not limited thereto. The setting positions of the sealing metal layer SML1 and the sealing material layer SSL1 may be determined according to the predetermined setting position of the optical element OE. Furthermore, after forming an optical element OE on a carrier, a sealing metal layer SML2 and a sealing material layer SSL2 may be disposed on the optical element OE (for example, on the surface of the protrusion PP1 of the non-infrared cutoff filter CFR). Then, the sealing material layer SSL1 may be aligned with the sealing material layer SSL2, and the sealing material layer SSL2 may be bonded to the sealing material layer SSL1. In this way, the optical element OE may be bonded to the island portion IP of the stretchable substrate FS. In the present embodiment, the sealing metal layer SML1, the sealing material layer SSL1, the sealing metal layer SML2, and the sealing material layer SSL2 may constitute a sealing element SEL, that is, the sealing element SEL may be disposed corresponding to the island portion IP. Specifically, the flexible sensor FD may include a plurality of sealing elements SEL, and the sealing elements SEL may be respectively disposed on one of the island portions IP. According to the present embodiment, in the top view of the flexible sensor FD (as shown in FIG. 1 ), the sealing element SEL may be disposed along the edges of the island portion IP (e.g., edge EE1, edge EE2, edge EE3, and edge EE4), and the sealing element SEL may surround the sensing element SE and the driving unit DU. In detail, the sealing element SEL disposed on an island portion IP may, for example, have a closed annular structure, and surround the sensing element SE and the driving unit DU disposed on the island portion IP. In addition, in the present embodiment, the sealing element SEL may also surround the groove RS (or the anti-fracture structure AC), but is not limited thereto.

It should be noted that, in order to simplify the drawings, FIG. 3 and subsequent drawings only exemplarily show the sealing element SEL and the optical element OE, and their structures can be referred to above, so they will not be described in detail.

As shown in FIG. 2 , after the optical element OE is bonded to the island-shaped portion IP and the sealing element SEL is formed, a space SP may be formed between the optical element OE, the sealing element SEL and the organic insulating layer OIL. The space SP may correspond to the island-shaped portion IP. Specifically, there may be a space SP on each island-shaped portion IP. The space SP may be used to accommodate the sensing element SE, that is, the sensing element SE may be disposed in the space SP. In the present embodiment, since one sensing element SE is disposed on one island-shaped portion IP, one sensing element SE may be accommodated in each space SP. According to the present embodiment, the space SP may be in a vacuum state. In this way, the situation where heat energy is transferred to the sensing element SE in other ways may be reduced, thereby improving the accuracy of the sensing element SE.

According to the present embodiment, the flexible sensor FD may further include a supporting film SUF, wherein the supporting film SUF is disposed under the stretchable substrate FS. The supporting film SUF of the present embodiment may include a flexible substrate or at least partially include a flexible substrate. The material of the supporting film SUF may refer to the material of the above-mentioned stretchable substrate FS, but is not limited thereto. In some embodiments, the supporting film SUF may include the same material as the stretchable substrate FS. In some embodiments, the material of the supporting film SUF may be different from the material of the stretchable substrate FS. In addition, although the supporting film SUF in FIG. 2 (and FIG. 3) is shown as a single layer, the present embodiment is not limited thereto. In some embodiments, the supporting film SUF may include a multi-layer structure.

According to the present embodiment, the supporting film SUF may be disposed corresponding to the island portion IP of the stretchable substrate FS. Specifically, the supporting film SUF may be disposed under the island portion IP of the stretchable substrate FS. The supporting film SUF may be used to support other film layers and/or structures located thereon. In other words, by disposing the supporting film SUF corresponding to the island portion IP, the supporting film SUF may provide a supporting effect for the elements and/or film layers disposed on the island portion IP, such as the sub-circuit structure SC, the sensing element SE, and the optical element OE. In the present embodiment, the supporting film SUF may be made of a material with better elasticity, thereby improving the stretchability of the flexible sensor FD.

According to the present embodiment, as shown in FIG. 2 , the supporting film SUF may not be provided corresponding to the bridge-shaped portion BP of the stretchable substrate FS, but is not limited thereto. In some embodiments, the supporting film SUF may be provided corresponding to the bridge-shaped portion BP (for example, as shown in FIG. 11 ). Specifically, the supporting film SUF may be a patterned film layer, and may include an opening OP3, wherein the opening OP3 may correspond to the bridge-shaped portion BP. In detail, a material layer of a whole supporting film SUF may be first provided under the stretchable substrate FS, and a portion of the supporting film SUF corresponding to the bridge-shaped portion BP may be removed in the patterning process of the supporting film SUF to form the opening OP3. The opening OP3 may expose the surface of the bridge-shaped portion BP, but the present disclosure is not limited thereto. In some embodiments, the opening OP3 may be formed by removing a portion of the supporting film SUF. In this case, the supporting film SUF may be provided corresponding to the bridge-shaped portion BP, and the thickness of the portion of the supporting film SUF corresponding to the bridge-shaped portion BP may be smaller than the thickness of the portion of the supporting film SUF corresponding to the island-shaped portion IP. By not providing the supporting film SUF corresponding to the bridge-shaped portion BP, the flexibility of the flexible sensor FD may be improved.

According to the present embodiment, as shown in FIG3 , the supporting film SUF may be arranged corresponding to the opening area OPR. In this case, since the circuit structure CS and the organic insulating layer OIL of the present embodiment may not be arranged corresponding to the opening area OPR, the surface of the portion of the supporting film SUF corresponding to the opening area OPR may be exposed, but is not limited thereto. In some embodiments, the supporting film SUF may not be arranged corresponding to the opening area OPR. It should be noted that, although not shown in the figure, the flexible sensor FD may also include a polymer material arranged corresponding to the opening area OPR. Specifically, the polymer material may be filled in the opening area OPR (for example, the opening area OPR may be filled). In this way, the flexibility of the flexible sensor FD may be improved. The characteristics of the polymer material corresponding to the opening area OPR setting here can be applied to the structures of each embodiment and modified embodiment of the present disclosure, and will not be repeated hereafter.

It should be noted that the structure of the flexible sensor FD of the present embodiment is not limited to the above content and the structure shown in Figures 1 to 3, but may include any suitable components and/or film layers. More embodiments of the present disclosure will be described below. In order to simplify the description, the same film layers or components in the following embodiments will use the same reference numerals, and their features will not be repeated, and the differences between the embodiments will be described in detail below. In addition, Figures 1 to 3 can be regarded as only showing a portion of the flexible sensor FD. For example, in some embodiments, the flexible sensor FD of the present disclosure may include a plurality of repeated structures as shown in Figures 1 to 3, which are connected to each other, and the following embodiments are the same and will not be repeated.

Please refer to Figures 4 and 5, Figure 4 is a schematic top view of the electronic device of the second embodiment of the present disclosure, and Figure 5 is a schematic cross-sectional view of the electronic device of the second embodiment of the present disclosure. In order to simplify the drawings, Figure 4 only shows an island-shaped portion IP of the stretchable substrate FS and some components disposed thereon, and the remaining components and/or film layers are omitted in Figure 4. The electronic device 100 of the present embodiment may include a flexible sensor FD1. According to the present embodiment, a plurality of sensing elements SE may be disposed on an island-shaped portion IP of the stretchable substrate FS of the flexible sensor FD1. In addition, a sub-circuit structure SC disposed corresponding to an island-shaped portion IP may include a plurality of drive units DU, each electrically connected to one of the sensing elements SE disposed on the island-shaped portion IP. For example, as shown in FIG4 , four sensing pixels SEP may be disposed on an island-shaped portion IP of the stretchable substrate FS of the flexible sensor FD1, but the present invention is not limited thereto. In the present embodiment, a sensing pixel SEP may be defined, for example, by a sensing element SE and a driving unit DU electrically connected to the sensing element SE. Therefore, FIG1 may show a structure in which a sensing pixel SEP is disposed on an island-shaped portion IP. In other words, in the flexible sensor FD1 of the present embodiment, four sensing elements SE may be disposed on an island-shaped portion IP. In order to simplify the drawings, FIG4 only exemplarily shows the sensing pixel SEP in the form of a box, and the structure of the sensing element SE and the driving unit DU included in the sensing pixel SEP may refer to the structures shown above and in FIGS. 1 to 3 , and thus will not be described in detail. In this embodiment, the sensing pixels SEP (or sensing elements SE) disposed on an island portion IP may be arranged in a matrix, for example, but not limited thereto. For example, in FIG. 4 , the sensing pixels SEP disposed on an island portion IP may be arranged in a 2*2 matrix, but not limited thereto.

According to the present embodiment, in the top view of the flexible sensor FD1 (as shown in FIG4 ), the sealing element SEL and the anti-fracture structure AC disposed on an island-shaped portion IP may be disposed along the edge of the island-shaped portion IP, and the sealing element SEL and the anti-fracture structure AC may surround the sensing pixels SEP disposed on the island-shaped portion IP, or surround the sensing elements SE and the driving unit DU disposed on the island-shaped portion IP. In addition, as shown in FIG5 , since a plurality of sensing elements SE are disposed on an island-shaped portion IP of the stretchable substrate FS, a plurality of sensing elements SE may be accommodated in a space SP formed by the sealing element SEL, the optical element OE, and the organic insulating layer OIL.

In some embodiments, as shown in FIG5 , the flexible sensor FD1 may further include a glass layer UTG, wherein the glass layer UTG may be disposed on the optical element layer OEL, or in other words, may be disposed on the optical element OE. In this embodiment, the glass layer UTG may refer to a glass layer having a thickness of less than 300 micrometers (μm), but is not limited thereto. In some embodiments, as shown in FIG5 , the glass layer UTG may be a continuous film layer disposed on the optical element layer OEL. In some embodiments, the glass layer UTG may be a patterned film layer, wherein the glass layer UTG may be disposed corresponding to the island portion IP. In other words, the glass layer UTG may be disposed on the island portion IP. In some embodiments, although not shown in the figure, a stretchable polymer material may be filled between the glass layer UTG and the organic insulating layer OIL.

It should be noted that, although the structure of the flexible sensor FD1 corresponding to the opening region OPR is not shown in the figure, its structure may refer to the structure shown in FIG. 3 or the structures of other embodiments or modified embodiments of the present disclosure, and the present disclosure is not limited thereto.

Please refer to Figures 6 and 7, Figure 6 is a cross-sectional schematic diagram of the electronic device of the third embodiment of the present disclosure, and Figure 7 is a top schematic diagram of the electronic device of a modified embodiment of the third embodiment of the present disclosure. In order to simplify the drawings, Figure 7 only shows an island-shaped portion IP of the stretchable substrate FS and some components disposed thereon, while the remaining components and/or film layers are omitted in Figure 7. The electronic device 100 of this embodiment may include a flexible sensor FD2. According to this embodiment, the flexible sensor FD2 may also include a supporting spacer SPE, wherein the supporting spacer SPE may be disposed corresponding to the island-shaped portion IP of the stretchable substrate FS. Specifically, the supporting spacer SPE may be disposed on the island-shaped portion IP and connected between the organic insulating layer OIL and the optical element OE. In other words, the supporting spacer SPE may contact the organic insulating layer OIL and the optical element OE. One or more supporting spacers SPE may be disposed on an island portion IP. In the top view of the flexible sensor FD2, the supporting spacer SPE may not overlap the sensing element SE. For example, a plurality of sensing elements SE may be disposed on an island portion IP of the stretchable substrate FS of the flexible sensor FD2 of the present embodiment, and the supporting spacer SPE may be disposed between the sensing elements SE, or the supporting spacer SPE may be disposed in a staggered position with the sensing element SE, but the present invention is not limited thereto. In some embodiments, a sensing element SE may be disposed on an island portion IP of the stretchable substrate FS of the flexible sensor FD2, and a supporting spacer SPE may be disposed at any suitable position on the island portion IP that does not correspond to the sensing element SE. The supporting spacer SPE may provide a supporting effect for the optical element OE (or optical element layer OEL) disposed on the sensing element SE to improve the reliability of the flexible sensor FD2.

In some embodiments, as shown in FIG7 , a plurality of sensing pixels SEP (i.e., a plurality of sensing elements SE) may be disposed on an island portion IP of the stretchable substrate FS of the flexible sensor FD2, and the sensing pixels SEP may be arranged in a matrix. In this case, the supporting spacer SPE may be disposed in the gap GP of the sensing pixels SEP. For example, in the top view of the flexible sensor FD2 (as shown in FIG7 ), the supporting spacer SPE may have a cross shape and be disposed in the gap GP, but is not limited thereto.

It should be noted that the structure of the flexible sensor FD2 corresponding to the opening region OPR may refer to the structure shown in FIG. 3 or the structures of other embodiments or modified embodiments of the present disclosure, and the present disclosure is not limited thereto.

Please refer to FIG. 8 and FIG. 9 , FIG. 8 is a schematic cross-sectional view of an electronic device according to the fourth embodiment of the present disclosure, and FIG. 9 is a schematic cross-sectional view of an electronic device according to a variation of the fourth embodiment of the present disclosure. The electronic device 100 of the present embodiment may include a flexible sensor FD3. According to the present embodiment, the flexible sensor FD3 may include a thermal insulation layer HIL, wherein the thermal insulation layer HIL may be disposed on the island portion IP and cover the sensing element SE. Specifically, the thermal insulation layer HIL may be disposed in a space SP formed by the sealing element SEL, the optical element OE, and the organic insulation layer OIL, and may cover the sensing element SE. The thermal insulation layer HIL may contact the optical element OE and the organic insulation layer OIL. The thermal insulation layer HIL may include any suitable material with low thermal conductivity, such as silicon dioxide (SiO2), silicon nitride (Si3N4), titanium oxide (TiO), aluminum oxide (AlO), other suitable materials or a combination of the above materials. The thermal insulation layer HIL may provide a supporting effect for the optical element OE (or the optical element layer OEL) disposed on the sensing element SE to improve the reliability of the flexible sensor FD3. In addition, since the thermal insulation layer HIL includes a material with low thermal conductivity, the possibility of heat energy being transferred to the sensing element SE in other ways can be reduced by making the thermal insulation layer HIL cover the sensing element SE, thereby improving the accuracy of the sensing element SE.

In some embodiments, as shown in FIG. 9 , the thermal insulation layer HIL disposed in the space SP may include a first sub-thermal insulation layer SH1 and a second sub-thermal insulation layer SH2, wherein the second sub-thermal insulation layer SH2 may be disposed on the first sub-thermal insulation layer SH1. The interface IF between the first sub-thermal insulation layer SH1 and the second sub-thermal insulation layer SH2 is, for example, aligned with the lower surface of the thermistor TH, but is not limited thereto. In other words, the second sub-thermal insulation layer SH2 may cover the thermistor TH in the sensing element SE. The materials of the first sub-thermal insulation layer SH1 and the second sub-thermal insulation layer SH2 may refer to the materials of the thermal insulation layer HIL described above, so they will not be described in detail. In this embodiment, the thermal expansion coefficient of the second sub-thermal insulation layer SH2 may be greater than the thermal expansion coefficient of the first sub-thermal insulation layer SH1. Specifically, the first sub-thermal insulation layer SH1 and the second sub-thermal insulation layer SH2 may include different materials, wherein the thermal expansion coefficient of the material of the second sub-thermal insulation layer SH2 may be greater than the thermal expansion coefficient of the material of the first sub-thermal insulation layer SH1. By making the thermal expansion coefficient of the second sub-thermal insulation layer SH2 covering the thermistor TH greater than the thermal expansion coefficient of the first sub-thermal insulation layer SH1, the possibility of the thermistor TH being damaged during thermal expansion can be reduced.

The feature of the thermal insulation layer HIL disposed on the island portion IP in this embodiment can be applied to each embodiment and variant embodiment of the present disclosure. In addition, the structure of the flexible sensor FD3 corresponding to the opening region OPR can refer to the structure shown in FIG. 3 or the structure of other embodiments or variant embodiments of the present disclosure, and the present disclosure is not limited thereto.

Please refer to Figure 10, which is a cross-sectional schematic diagram of the electronic device of the fifth embodiment of the present disclosure. The electronic device 100 of this embodiment may include a flexible sensor FD4. Figure 10 shows the structure of the portion of the flexible sensor FD4 corresponding to the opening area OPR, and the structure of the remaining portion can refer to the contents of each embodiment and variant embodiment of the present disclosure. According to this embodiment, the stretchable substrate FS of the flexible sensor FD4 can be set corresponding to the opening area OPR. In other words, the stretchable substrate FS of the present embodiment can be a continuous film layer without being patterned. In this case, the portion of the stretchable substrate FS corresponding to the sensing element SE, the optical element OE, etc. can be defined as the island portion IP, the portion of the stretchable substrate FS corresponding to the connecting line CW can be defined as the bridge portion BP, and the remaining portion of the stretchable substrate FS can correspond to the opening area OPR.

In this embodiment, the organic insulating layer OIL may be disposed corresponding to the opening region OPR. Specifically, as shown in FIG. 10 , the organic insulating layer OIL may be disposed on a portion of the stretchable substrate FS corresponding to the opening region OPR. Since the circuit structure CS and the connecting line CW may not be disposed corresponding to the opening region OPR, the organic insulating layer OIL may be directly disposed on the stretchable substrate FS. In other words, the organic insulating layer OIL may directly contact the stretchable substrate FS in the opening region OPR.

In the present embodiment, the portion of the supporting film SUF corresponding to the opening area OPR may include at least one groove RS2. The groove RS2 may be formed by partially removing the portion of the supporting film SUF corresponding to the opening area OPR. In this case, the thickness of the portion of the supporting film SUF corresponding to the opening area OPR may be smaller than the thickness of the portion of the supporting film SUF corresponding to the island portion IP. For example, the portion of the supporting film SUF corresponding to the opening area OPR may have a thickness T1, and the portion of the supporting film SUF corresponding to the island portion IP may have a thickness T2, wherein the thickness T1 may be smaller than the thickness T2. Through the above design, the flexibility of the flexible sensor FD4 can be improved. In some embodiments, the portion of the supporting film SUF corresponding to the opening area OPR may be completely removed when forming the groove RS2. In this case, the groove RS2 may expose the surface of the stretchable substrate FS, or in other words, the supporting film SUF may not be set corresponding to the opening region OPR.

It should be noted that the structural design of the portion of the flexible sensor FD4 corresponding to the opening area OPR of this embodiment can be applied to each embodiment and variant embodiment of the present disclosure. In addition, the structure of the flexible sensor FD4 corresponding to the bridge portion BP can refer to the structure of other embodiments or variant embodiments of the present disclosure, and the present disclosure is not limited thereto.

Please refer to Figure 11, which is a cross-sectional schematic diagram of the electronic device of the sixth embodiment of the present disclosure. The electronic device 100 of this embodiment may include a flexible sensor FD5. According to this embodiment, the flexible sensor FD5 may include an adhesive layer ADH, which is disposed between the stretchable substrate FS and the supporting film SUF. The adhesive layer ADH can be used to attach the supporting film SUF to the stretchable substrate FS. The adhesive layer ADH may include any suitable adhesive material. In this embodiment, the adhesive layer ADH may be disposed corresponding to the stretchable substrate FS, that is, it may be disposed corresponding to the island portion IP and the bridge portion BP of the stretchable substrate FS. The adhesive layer ADH may be a patterned film layer, wherein the pattern of the adhesive layer ADH may be the same as the pattern of the stretchable substrate FS, but is not limited thereto. For example, the stretchable substrate FS of the present embodiment may be patterned and not arranged corresponding to the opening area OPR (refer to the stretchable substrate FS shown in FIG. 2 ), and the adhesive layer ADH arranged corresponding to the stretchable substrate FS may not be arranged corresponding to the opening area OPR. For example, the adhesive layer ADH may include an opening OP4 corresponding to the opening area OPR, but is not limited thereto. In addition, the supporting film SUF of the present embodiment may be, for example, a continuous film layer, that is, the supporting film SUF may be arranged for the stretchable substrate FS and the opening area OPR, but is not limited thereto.

In addition, in the present embodiment, the insulating layer (e.g., insulating layer IL1, insulating layer IL2, and insulating layer IL3) in the circuit structure CS may be disposed on the bridge-shaped portion BP of the stretchable substrate FS, that is, the portion of the insulating layer in the circuit structure CS corresponding to the bridge-shaped portion BP may not be removed, but is not limited thereto. In this case, the connection line CW disposed on the bridge-shaped portion BP of the stretchable substrate FS may not directly contact the stretchable substrate FS. In some embodiments, the structure of the portion of the flexible sensor FD5 corresponding to the bridge-shaped portion BP may be the structure shown in FIG. 2 .

Please refer to Figure 12, which is a cross-sectional schematic diagram of an electronic device of a variant embodiment of the sixth embodiment of the present disclosure. One of the main differences between the structure shown in Figure 12 and the structure shown in Figure 11 lies in the structural design of the support layer SUF and the adhesive layer ADH. In this variant embodiment, the adhesive layer ADH of the flexible sensor FD5 may be a patterned film layer, wherein the adhesive layer ADH may be arranged corresponding to the island portion IP but not corresponding to the bridge portion BP. In other words, the adhesive layer ADH may be arranged corresponding to a portion of the stretchable substrate FS. In this case, the adhesive layer ADH may include a plurality of portions P1, each corresponding to an island portion IP, wherein the portions P1 may be independent and separated from each other. The pattern of the portion P1 may be substantially the same as the pattern of the island portion IP, but is not limited thereto.

In this variant embodiment, the supporting film SUF may be a patterned film layer provided corresponding to the island portion IP of the stretchable substrate FS. Specifically, the supporting film SUF may not be provided corresponding to the opening area OPR and the bridge-shaped portion BP. In this case, the supporting film SUF may include a plurality of portions P2, each corresponding to an island portion IP, wherein the portions P2 may be independent and separated from each other. In this variant embodiment, a portion P1 of the adhesive layer ADH may correspond to a portion P2 of the supporting film SUF. In addition, the portion P1 of the adhesive layer ADH may, for example, have the same pattern as the portion P2 of the supporting film SUF, such as the pattern of the island portion IP, but is not limited thereto.

The feature of the above-mentioned flexible sensor FD5 including the adhesive layer ADH can be applied to each embodiment and variant embodiment of the present disclosure.

Please refer to Figure 13, which is a cross-sectional schematic diagram of the electronic device of the seventh embodiment of the present disclosure. The electronic device 100 of this embodiment may include a flexible sensor FD6. According to this embodiment, the flexible sensor FD6 may include a stretchable supporting film SSF, which is disposed on the optical element layer OEL. Specifically, the stretchable supporting film SSF may be a continuous film layer disposed on the optical element layer OEL, but is not limited to this. The stretchable supporting film SSF may include any suitable flexible material. The material of the stretchable supporting film SSF may refer to the material of the supporting film SUF, that is, the material of the stretchable substrate FS, but is not limited to this. In some embodiments, the stretchable supporting film SSF may include the same material as the supporting film SUF. In some embodiments, the material of the stretchable supporting film SSF may be different from the material of the supporting film SUF.

In this embodiment, the support film SUF and the adhesive layer ADH of the flexible sensor FD6 may be arranged corresponding to the stretchable substrate FS and the opening region OPR, but the present invention is not limited thereto. That is, the support film SUF and the adhesive layer ADH of this embodiment may be continuous film layers. In some embodiments, the structure of the support film SUF and the adhesive layer ADH of the flexible sensor FD6 may refer to the structure shown in FIG. 11 or FIG. 12 .

It should be noted that, although not shown in the figure, the flexible sensor FD6 may also include a polymer material (e.g., a stretchable polymer material) disposed corresponding to the opening region OPR. Specifically, the polymer material may be filled in the opening region OPR. In this way, the stretchability of the flexible sensor FD6 may be improved, or the stability of the flexible sensor FD6 may be improved.

In this embodiment, the optical element layer OEL may be a continuous film layer, but is not limited thereto. Specifically, compared to the optical element layer OEL in the above-mentioned embodiment, the optical element layer OEL in this embodiment may not be patterned to form a plurality of optical elements separated from each other (not shown). In this case, the elements and film layers (such as the above-mentioned non-infrared cutoff filter CFR, anti-reflection layer ARF and insulation layer IN) included in the optical elements arranged corresponding to different island portions IP may be connected to each other to form a continuous structure.

The feature of the flexible sensor FD6 in this embodiment including the stretchable supporting film SSF can be applied to each embodiment and modified embodiment of the present disclosure.

The manufacturing method of the flexible sensor disclosed in the present invention will be described in detail below.

Please refer to FIG. 14 to FIG. 17, which are flowcharts of manufacturing an electronic device according to the eighth embodiment of the present disclosure. The manufacturing method of the electronic device according to this embodiment can be applied to the flexible sensors of the above-mentioned embodiments and modified embodiments. According to this embodiment, the manufacturing method of the electronic device may include the following steps:

S102: providing a stretchable substrate, and setting a circuit structure on the stretchable substrate;

S104: Disposing a sacrificial layer and a sensing element on the stretchable substrate;

S106: Providing a protective layer on the sensing element;

S108: placing a supporting film on a side of the stretchable substrate opposite to the circuit structure;

S110: removing the protective layer and the sacrificial layer; and

S112: Arrange an optical element on the sensing element.

The following will describe each step in detail.

As shown in FIG. 14 , the manufacturing method of the electronic device of the present embodiment may first include step S102, providing a stretchable substrate FS, and setting a circuit structure CS on the stretchable substrate FS. The structures of the stretchable substrate FS and the circuit structure CS can be referred to above, so they will not be described in detail. In some embodiments, before setting the circuit structure CS on the stretchable substrate FS, the stretchable substrate FS may be subjected to a patterning process to remove a portion of the stretchable substrate FS corresponding to the opening area (i.e., the above-mentioned opening area OPR), thereby forming an island portion IP and a bridge portion BP. In this case, the stretchable substrate FS may have the structure shown in FIG. 3 . In some embodiments, the circuit structure CS may be first set on the stretchable substrate FS, and then the stretchable substrate FS and the circuit structure CS may be subjected to a patterning process at the same time. For example, the stretchable substrate FS and a portion of the circuit structure CS corresponding to the opening area may be removed in the same patterning process. In some embodiments, the stretchable substrate FS may not be patterned, or the portion of the stretchable substrate FS corresponding to the opening area may not be removed, as shown in FIG. 10 above.

When forming the circuit structure CS, the connection line CW may be formed at the same time. The connection line CW may be, for example, located in the same layer as the conductive layer in the circuit structure CS, or may be formed by the conductive layer in the circuit structure CS, but is not limited thereto. For example, as shown in FIG. 14 , the connection line CW1 (e.g., the scanning line SL described above) may be formed by the conductive layer M1, and the connection line CW2 (e.g., the data line DL described above) may be formed by the conductive layer M2. The position of the connection line CW may be determined according to the position of the bridge-shaped portion BP of the stretchable substrate FS. In some embodiments, as shown in FIG. 14, the portion of the insulating layer (e.g., insulating layer IL1, insulating layer IL2, and insulating layer IL3) in the circuit structure CS corresponding to the bridge portion BP may not be removed, which may also refer to the structure shown in FIG. 11. In some embodiments, the portion of the insulating layer in the circuit structure CS corresponding to the bridge portion BP may be removed, except for the insulating layer IL3 disposed between the connection line CW1 and the connection line CW2, which may refer to the structure shown in FIG. 2. In addition, although not shown in the figure, a portion of the circuit structure CS corresponding to the opening area may be removed through a patterning process, as shown in FIG. 3.

In some embodiments, after forming the circuit structure CS, a groove RS may be formed in the circuit structure CS. The structure of the groove RS may refer to the above, so it is not repeated. In some embodiments, after forming the circuit structure CS, an organic insulating layer OIL may be provided on the circuit structure CS, wherein the organic insulating layer OIL may fill the groove RS to form the anti-crack structure AC. The structure of the organic insulating layer OIL may refer to the above, so it is not repeated.

Next, step S104 may be performed to arrange a sacrificial layer SAC and a sensing element SE on the stretchable substrate FS. In detail, as shown in FIG14 , after forming the organic insulating layer OIL, a conductive layer M3 may be arranged on the organic insulating layer OIL, thereby forming a contact CT and a bias electrode BE. Thereafter, a sacrificial layer SAC may be arranged on the organic insulating layer OIL. The sacrificial layer SAC may cover the conductive layer M3. Next, a sensing element SE may be arranged at a position corresponding to the island portion IP of the stretchable substrate FS. One or more sensing elements SE may be arranged on one island portion IP. The sensing element SE may be electrically connected to the bias electrode BE and the contact CT. Specifically, before the sensing element SE is provided, a through hole V2 may be formed in the sacrificial layer SAC, wherein the through hole V2 may expose the bias electrode BE and the contact CT, and the sensing element SE (e.g., the hinge arm HG of the sensing element SE) may extend into the through hole V2 and contact the bias electrode BE and the contact CT. The structure of the sensing element SE may be referred to above, so it will not be described in detail.

Next, step S106 may be performed to dispose a protection layer PL on the sensing element SE. Specifically, after forming the sensing element SE, the protection layer PL may be disposed on the sacrificial layer SAC, wherein the protection layer PL may cover the sensing element SE. The protection layer PL may include any suitable insulating material.

Next, step S108 may be performed to place the supporting film SUF on the side of the stretchable substrate FS opposite to the circuit structure CS. Specifically, as shown in FIG15 , after the protective layer PL is formed, the structure shown in FIG14 may be turned over, and the supporting film SUF may be attached to the stretchable substrate FS. In the present embodiment, the supporting film SUF may be attached to the stretchable substrate FS, for example, through an adhesive layer ADH, but is not limited thereto. In some embodiments, the adhesive layer ADH may not be included between the supporting film SUF and the stretchable substrate FS. The structures of the adhesive layer ADH and the supporting film SUF may refer to the above, so they will not be described in detail. In this embodiment, by providing the protection layer PL covering the sensing element SE, the possibility of the sensing element SE being damaged during the process of attaching the supporting film SUF can be reduced.

Afterwards, step S110 may be performed to remove the protective layer PL and the sacrificial layer SAC. Specifically, after the support film SUF is attached to the stretchable substrate FS, the structure shown in FIG. 15 may be flipped over and the protective layer PL may be removed. After removing the protective layer PL, the sacrificial layer SAC may be removed. For example, the sacrificial layer SAC may be removed by etching, but is not limited thereto. After removing the sacrificial layer SAC, the sensing element SE may be exposed.

Next, step S112 may be performed to arrange the optical element OE on the sensing element SE. Specifically, the optical element OE may be first formed on a carrier CR1, and then the optical element OE may be transferred to the sensing element SE. The carrier CR1 may include, for example, a glass plate, but is not limited thereto. Specifically, as shown in FIG. 17 , an insulating layer IN may be first formed on the carrier CR1, an anti-reflection layer ARF may be formed on the insulating layer IN, a non-infrared cutoff filter CFR may be formed on the anti-reflection layer ARF, and another anti-reflection layer ARF may be formed on the non-infrared cutoff filter CFR, thereby forming the optical element OE. The non-infrared cutoff filter CFR may be arranged on the anti-reflection layer ARF in such a way that the protrusion PP1 is away from the carrier CR1. It should be noted that, although FIG17 shows a structure in which multiple optical elements OE are independently disposed on the carrier CR1, the present embodiment is not limited thereto. In some embodiments, the elements and film layers included in different optical elements OE may be connected to each other.

After forming the optical element OE on the carrier CR1, the optical element OE can be set on the sensing element SE in an aligned bonding manner. Specifically, a sealing metal layer SML1 and a sealing material layer SSL1 set on the sealing metal layer SML1 can be formed on the organic insulating layer OIL, and a sealing metal layer SML2 and a sealing material layer SSL2 can be formed on the protrusion PP1 of the non-infrared cut-off filter CFR. Then, the sealing material layer SSL1 can be aligned with the sealing material layer SSL2, and the sealing material layer SSL2 can be bonded to the sealing material layer SSL1. The optical element OE is thereby set on the sensing element SE. Thereafter, the carrier CR1 can be removed, thereby forming an electronic device.

Please refer to FIG. 18 , which is a cross-sectional schematic diagram of an electronic device of a variation of the eighth embodiment of the present disclosure. According to this variation, the method for manufacturing the electronic device may further include setting an alignment pattern on the carrier CR1 and on the organic insulating layer OIL. Specifically, before the step of setting the optical element OE on the sensing element SE in an aligned bonding manner, an alignment pattern ALP1 may be set on the organic insulating layer OIL, and an alignment pattern ALP2 may be set on the carrier CR1. The alignment pattern ALP1 and the alignment pattern ALP2 may help to set the optical element OE at a predetermined setting position. In detail, the placement positions of the alignment pattern ALP1 and the alignment pattern ALP2 can be determined based on the predetermined placement position of the optical element OE, and in the step of placing the optical element OE, the optical element OE can be placed on the sensing element SE by aligning the alignment pattern ALP2 on the carrier CR1 with the alignment pattern ALP1 on the organic insulating layer OIL. In this way, the bonding error of the optical element OE can be reduced. The alignment pattern ALP1 and the alignment pattern ALP2 can include any suitable insulating material. It should be noted that the placement positions of the alignment pattern ALP1 and the alignment pattern ALP2 are not limited to those shown in FIG. 18 . In some embodiments, the alignment pattern ALP1 and the alignment pattern ALP2 may be arranged corresponding to the island portion IP, or in other words, may be arranged corresponding to the arrangement area of the sensing element SE.

Please refer to FIG. 19 to FIG. 21, which are flowcharts of manufacturing an electronic device according to the ninth embodiment of the present disclosure. The manufacturing method of the electronic device according to this embodiment can be applied to the flexible sensors of the above-mentioned embodiments and modified embodiments. According to this embodiment, the manufacturing method of the electronic device may include the following steps:

S102: providing a stretchable substrate, and setting a circuit structure on the stretchable substrate;

S104: Disposing a sacrificial layer and a sensing element on the stretchable substrate;

S106: Providing a protective layer on the sensing element;

S108: placing a supporting film on a side of the stretchable substrate opposite to the circuit structure;

S109: Patterned support films and stretchable substrates;

S110: Remove the protective and sacrificial layers

S112: Arranging an optical element on the sensing element; and

S113: Setting a glass layer on the optical element.

The details of each step will be described in detail below. In the manufacturing method of the electronic device of this embodiment, the contents of step S102 to step S108 can be referred to above, so they will not be described in detail.

The manufacturing method of the electronic device of the present embodiment may further include step S109, patterning the supporting film SUF and the stretchable substrate FS. Specifically, as shown in FIG19 , after the supporting film SUF is attached to the stretchable substrate FS (for example, through the adhesive layer ADH), a patterning process may be performed on the supporting film SUF and/or the stretchable substrate FS to remove a portion of the supporting film SUF and/or the stretchable substrate FS corresponding to the opening area OPR. The patterning process of the supporting film SUF and/or the stretchable substrate FS may, for example, include laser etching, wet etching or other suitable processes. The adhesive layer ADH may be patterned in the patterning process of the supporting film SUF and/or the stretchable substrate FS. It should be noted that in some embodiments, the stretchable substrate FS may not be patterned, or a portion of the stretchable substrate FS corresponding to the opening region OPR may not be removed. In addition, although not shown in the figure, during the patterning process of the support film SUF, the portion of the support film SUF corresponding to the bridge portion BP may be removed, as shown in FIG. 2 , but not limited thereto.

After the patterning process of the support film SUF and/or the stretchable substrate FS is completed, step S110 and step S112 may be performed, and the contents thereof may be referred to above, so they will not be described in detail. After completing step S112, the structure shown in FIG. 20 may be formed.

The manufacturing method of the electronic device of this embodiment may further include step S113, disposing a glass layer UTG on the optical element OE. Specifically, as shown in FIG21 , after disposing the optical element OE, a glass layer UTG may be disposed on the optical element OE to form an electronic device. The features of the glass layer UTG can be referred to above, so they are not repeated here. In some embodiments, after disposing the optical element OE, a stretchable support film SSF may be disposed on the optical element OE instead of the glass layer UTG, as shown in FIG13 . In some embodiments, although not shown in the figure, after the glass layer UTG or the stretchable supporting film SSF is set on the optical element OE, a patterning process may be performed on the glass layer UTG or the stretchable supporting film SSF, wherein the patterned glass layer UTG or the stretchable supporting film SSF may be set corresponding to the island portion IP.

In summary, the present disclosure provides a flexible sensor, which includes a stretchable substrate and a sensing element disposed on the stretchable substrate. The stretchable substrate includes an island portion and a bridge portion connected between the island portions, and the sensing element can be disposed corresponding to the island portion. The flexible sensor disclosed in the present disclosure can have good flexibility, thereby increasing the application scenarios of the flexible sensor. The above is only an embodiment of the present disclosure, and all equal changes and modifications made according to the scope of the patent application of the present disclosure should fall within the scope of the present disclosure.

100: electronic device AB: absorber AC: anti-crack structure ADH: adhesive layer ALP1, ALP2: alignment pattern ARF: anti-reflection layer BE: bias electrode BL: bias line BP: bridge part CFR: non-infrared cut filter CR: channel region CR1: carrier CS: circuit structure CT: contact CW, CW1, CW2, CW3: connection line DL: data line DOE: drain electrode DR: drain region DU: drive unit EE, EE1, EE2, EE3, EE4, EE5, EE6: edge EP1, EP2: extension part FD,FD1,FD2,FD3,FD4,FD5,FD6:Flexible sensor FP:Fixed post FS:Stretchable substrate GE:Gate electrode GP:Gap HG:Hook arm HIL:Heat insulation layer HP1:Horizontal part IF:Interface IL1,IL2,IL3,IN:Insulation layer IP:Island part L1:First length L2:Second length M1,M2,M3:Conductive layer OE:Optical element OEL:Optical element layer OIL:Organic insulation layer OP1,OP2,OP3,OP4:Opening OPR:Opening area P1,P2:Part PL:Protective layer PP1:Protrusion RS,RS2:Groove S1, S2: surface SAC: sacrificial layer SC: sub-circuit structure SE: sensing element SEL: sealing element SEP: sensing pixel SH1: first sub-thermal insulation layer SH2: second sub-thermal insulation layer SL: scanning line SM: semiconductor layer SML1, SML2: sealing metal layer SOE: source electrode SP: space SPE: support spacer SR: source region SSF: stretchable support film SSL1, SSL2: sealing material layer SUF: support film T1, T2: thickness TH: thermistor UTG: glass layer V1, V2: perforation X, Y, Z: direction A-A’, B-B’: tangent

FIG. 1 is a schematic diagram of a top view of an electronic device of the first embodiment of the present disclosure. FIG. 2 is a schematic diagram of a cross-section of the electronic device of the first embodiment of the present disclosure along the tangent line A-A’. FIG. 3 is a schematic diagram of a cross-section of the electronic device of the first embodiment of the present disclosure along the tangent line B-B’. FIG. 4 is a schematic diagram of a top view of an electronic device of the second embodiment of the present disclosure. FIG. 5 is a schematic diagram of a cross-section of the electronic device of the second embodiment of the present disclosure. FIG. 6 is a schematic diagram of a cross-section of the electronic device of the third embodiment of the present disclosure. FIG. 7 is a schematic diagram of a top view of an electronic device of a variant embodiment of the third embodiment of the present disclosure. FIG. 8 is a schematic diagram of a cross-section of the electronic device of the fourth embodiment of the present disclosure. FIG. 9 is a schematic diagram of a cross-section of the electronic device of a variant embodiment of the fourth embodiment of the present disclosure. FIG. 10 is a schematic cross-sectional view of an electronic device of the fifth embodiment of the present disclosure. FIG. 11 is a schematic cross-sectional view of an electronic device of the sixth embodiment of the present disclosure. FIG. 12 is a schematic cross-sectional view of an electronic device of a modified embodiment of the sixth embodiment of the present disclosure. FIG. 13 is a schematic cross-sectional view of an electronic device of the seventh embodiment of the present disclosure. FIG. 14, FIG. 15, FIG. 16, and FIG. 17 are manufacturing flow charts of an electronic device of the eighth embodiment of the present disclosure. FIG. 18 is a schematic cross-sectional view of an electronic device of a modified embodiment of the eighth embodiment of the present disclosure. FIG. 19, FIG. 20, and FIG. 21 are manufacturing flow charts of an electronic device of the ninth embodiment of the present disclosure.

100: Electronic devices

AC: Anti-fracture structure

BE: Bias electrode

BL: Bias line

BP: Bridge-like part

CT: Contactor

CW: Connecting cable

DL: Data line

DU: Drive Unit

EE,EE1,EE2,EE3,EE4,EE5,EE6: edge

FD:Flexible Detector

FS: Stretchable substrate

IP: Island part

L1: first length

L2: Second length

OIL: organic insulating layer

OP1: Open mouth

OPR: Opening region

RS: Groove

SE: Sensing element

SEL: Sealing element

SL: Scan line

X,Y,Z: Direction

A-A’,B-B’: tangent

Claims (20)

A flexible sensor that can be stretched from a first state to a second state, comprising: a stretchable substrate having a plurality of island-shaped portions and a plurality of bridge-shaped portions, wherein at least one of the plurality of bridge-shaped portions connects two adjacent island-shaped portions of the plurality of island-shaped portions; and a plurality of sensing elements disposed on the plurality of island-shaped portions of the stretchable substrate; wherein at least one of the plurality of bridge-shaped portions has a first length in the first state and a second length in the second state, and the first length is different from the second length. A flexible sensor according to claim 1, wherein the flexible sensor has at least one opening area, wherein four of the plurality of island-shaped portions are disposed around the at least one opening area. According to the flexible sensor described in claim 1, each of the plurality of sensing elements is respectively arranged on one of the plurality of island-shaped portions. According to the flexible sensor described in claim 1, multiple of the multiple sensing elements are disposed on one of the multiple island-shaped portions. The flexible sensor according to claim 1 also includes a supporting spacer disposed on one of the plurality of island-shaped portions. The flexible sensor according to claim 1 further comprises: a circuit structure disposed on the stretchable substrate, the circuit structure comprising a plurality of sub-circuit structures, each correspondingly disposed on the surface of one of the plurality of island-shaped portions; and an organic insulating layer disposed on the circuit structure; wherein the plurality of sub-circuit structures each comprise at least one driving element, and the at least one driving element is electrically connected to one of the plurality of sensing elements. A flexible sensor according to claim 6, wherein the circuit structure includes a groove, and in a top view of the flexible sensor, the groove is arranged along the edge of one of the plurality of island-shaped portions and surrounds a portion of the plurality of sensing elements arranged on one of the plurality of island-shaped portions. The flexible sensor according to claim 7, wherein a portion of the organic insulating layer fills the groove and forms an anti-fracture structure. A flexible sensor according to claim 6, wherein the flexible sensor has at least one opening area, and in a top view of the flexible thermal sensor, the at least one opening area is surrounded by a plurality of the plurality of island-shaped portions and a plurality of the plurality of bridge-shaped portions, wherein the organic insulating layer directly contacts the stretchable substrate in the at least one opening area. The flexible sensor according to claim 1 further includes a sealing element, which is arranged correspondingly on one of the plurality of island-shaped portions. In a top view of the flexible sensor, the sealing element is arranged along the edge of one of the plurality of island-shaped portions and surrounds a portion of the plurality of sensing elements arranged on one of the plurality of island-shaped portions. The flexible sensor according to claim 1 further comprises an optical element layer disposed on the plurality of sensing elements, wherein the optical element layer comprises a plurality of optical elements respectively corresponding to the plurality of island-shaped portions. The flexible sensor according to claim 11 further includes a glass layer disposed on the optical element layer. The flexible sensor according to claim 11 further comprises a stretchable supporting film disposed on the optical element layer. The flexible sensor according to claim 1 also includes a supporting film, which is arranged under the stretchable substrate and corresponds to the multiple island-shaped portions of the stretchable substrate. A flexible sensor according to claim 14, wherein the flexible sensor has at least one opening area, and in a top view of the flexible sensor, the at least one opening area is surrounded by a plurality of the plurality of island-shaped portions and a plurality of the plurality of bridge-shaped portions, wherein the supporting membrane is also arranged corresponding to the at least one opening area. The flexible sensor according to claim 15, wherein the thickness of a portion of the supporting film corresponding to the at least one opening area is smaller than the thickness of another portion of the supporting film corresponding to the plurality of island portions. The flexible sensor according to claim 1 further comprises a thermal insulation layer, which is disposed correspondingly on the plurality of island-shaped portions and covers the plurality of sensing elements. A flexible sensor according to claim 1, wherein the flexible sensor has at least one opening area, and in a top view of the flexible sensor, the at least one opening area is surrounded by a plurality of the plurality of island-shaped portions and a plurality of the plurality of bridge-shaped portions, wherein the stretchable substrate includes at least one opening, and the at least one opening corresponds to the at least one opening area. The flexible sensor according to claim 1 further comprises a connecting wire, which is arranged on at least one of the plurality of bridge-shaped parts and electrically connects two adjacent sensing elements among the plurality of sensing elements. The flexible sensor according to claim 19 further includes an anti-fracture structure disposed on one of the plurality of island-shaped portions, and in a top view of the flexible sensor, the anti-fracture structure does not overlap the connecting line.

Images