TW202143512A - Transfer substrate - Google Patents
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- TW202143512A TW202143512A TW110100595A TW110100595A TW202143512A TW 202143512 A TW202143512 A TW 202143512A TW 110100595 A TW110100595 A TW 110100595A TW 110100595 A TW110100595 A TW 110100595A TW 202143512 A TW202143512 A TW 202143512A
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- 239000000758 substrate Substances 0.000 title claims abstract description 113
- 239000000853 adhesive Substances 0.000 claims abstract description 17
- 230000001070 adhesive effect Effects 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims description 14
- 238000010586 diagram Methods 0.000 description 9
- 239000000470 constituent Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
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- 239000004593 Epoxy Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000013008 moisture curing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68313—Auxiliary support including a cavity for storing a finished device, e.g. IC package, or a partly finished device, e.g. die, during manufacturing or mounting
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Abstract
本實施形態之課題在於提供一種可改善發光元件之傳送效率之傳送基板。 本實施形態之傳送基板係暫時地保持發光元件者,具有與發光元件之端子側接觸之保持面,且前述保持面係黏著性之凹凸面。The problem of this embodiment is to provide a transfer substrate that can improve the transfer efficiency of the light-emitting element. The transfer substrate of this embodiment temporarily holds the light-emitting element, and has a holding surface contacting the terminal side of the light-emitting element, and the holding surface is an adhesive concave-convex surface.
Description
本發明之實施形態係關於一種傳送基板。The embodiment of the present invention relates to a transfer substrate.
近年來,提議各種將微小尺寸之發光元件排列而構成之發光裝置。如此之發光元件,例如在形成於元件形成用基板之後,暫時地保持於其他保持用基板,最終安裝於配線基板。於將發光元件自元件形成用基板朝保持用基板傳送(transfer)時,作為一例,已知藉由吸附用治具吸附發光元件,將發光元件自元件形成用基板剝離之技術。In recent years, various light-emitting devices constructed by arranging tiny-sized light-emitting elements have been proposed. Such a light-emitting element is, for example, after being formed on a substrate for forming an element, it is temporarily held on another holding substrate, and finally mounted on a wiring substrate. When transferring the light-emitting element from the element-forming substrate to the holding substrate, as an example, a technique is known in which the light-emitting element is peeled from the element-forming substrate by sucking the light-emitting element with a suction jig.
於如此之發光裝置之製造步驟中,於將某一基板上之發光元件朝另一基板傳送時,期望順利地進行發光元件自一基板之剝離、與發光元件朝另一基板之轉印。In the manufacturing steps of such a light-emitting device, when the light-emitting element on a certain substrate is transferred to another substrate, it is desirable to smoothly perform the peeling of the light-emitting element from one substrate and the transfer of the light-emitting element to the other substrate.
於本說明書中,將暫時地保持發光元件之基板之至少1者稱為傳送基板。In this specification, at least one of the substrates temporarily holding the light-emitting element is referred to as a transfer substrate.
本實施形態之目的在於提供一種可改善發光元件之傳送效率之傳送基板。The purpose of this embodiment is to provide a transfer substrate that can improve the transfer efficiency of the light-emitting element.
一實施形態之傳送基板 係暫時地保持發光元件之傳送基板,具有與發光元件之端子側接觸之保持面,且前述保持面係黏著性之凹凸面。Transmission board of one embodiment The transfer substrate for temporarily holding the light-emitting element has a holding surface contacting the terminal side of the light-emitting element, and the holding surface is an adhesive concave-convex surface.
一實施形態之傳送基板 係暫時地保持發光元件之傳送基板,具有與發光元件之端子側接觸之保持面,且於發光元件被保持於前述保持面之狀態下,前述保持面具有與1個發光元件重疊之複數個凸部。Transmission board of one embodiment The transfer substrate temporarily holding the light-emitting element has a holding surface in contact with the terminal side of the light-emitting element, and when the light-emitting element is held on the holding surface, the holding surface has a plurality of protrusions overlapping with one light-emitting element Department.
一實施形態之傳送基板 係暫時地保持發光元件之傳送基板,具有與發光元件之端子側接觸之保持面,且於發光元件被保持於前述保持面之狀態下,前述保持面具有與1個發光元件重疊之複數個凹部。Transmission board of one embodiment The transfer substrate temporarily holding the light-emitting element has a holding surface in contact with the terminal side of the light-emitting element, and when the light-emitting element is held on the holding surface, the holding surface has a plurality of recesses overlapping with one light-emitting element .
根據本實施形態,可提供一種能夠改善發光元件之傳送效率之傳送基板。According to this embodiment, it is possible to provide a transfer substrate capable of improving the transfer efficiency of the light-emitting element.
以下,對於本實施形態一面參照圖式一面進行說明。再者,揭示終極而言僅為一例,對於本領域技術人員針對保持發明之主旨之適當變更可容易地想到者,當然包含於本發明之範圍內。又,圖式為了使說明更加明確,與實際態樣相較雖存在將各部分之寬度、厚度、形狀等示意性地顯示之情形,但其終極而言僅為一例,並非限定本發明之解釋者。又,於本說明書與各圖中,存在下述情形,即:關於已出現之圖,對於發揮與前述之要件相同或類似之功能之構成要件賦予同一參照符號,且適當省略重複之詳細之說明。Hereinafter, the present embodiment will be described with reference to the drawings. Furthermore, the disclosure is only an example at the end, and those skilled in the art can easily think of appropriate changes to maintain the gist of the invention, and of course they are included in the scope of the present invention. In addition, in order to make the description more clear, the drawings may show the width, thickness, shape, etc. of each part schematically compared with the actual state. However, it is only an example in the end and does not limit the interpretation of the present invention. By. In addition, in this specification and the figures, there are the following situations, that is, with regard to the figures that have appeared, the same reference signs are assigned to the constituent elements that perform the same or similar functions as the aforementioned elements, and repeated detailed descriptions are appropriately omitted. .
圖1係用於說明發光裝置1之圖。本實施形態中所說明之發光裝置1,例如係顯示圖像之顯示裝置、或照明裝置等。FIG. 1 is a diagram for explaining the light-
發光裝置1具備配線基板2、及複數個發光元件3。配線基板2於玻璃基板或樹脂基板等基底基板上設置掃描線、信號線、電源線等各種配線。如此之配線基板2具有用於驅動發光元件3之複數個電晶體,有時稱為TFT基板或陣列基板、底板等。發光元件3各者安裝於配線基板2。該等之發光元件3於配線基板2之上矩陣狀地排列。發光元件3例如係被稱為小型LED或微型LED等極其微小之尺寸之發光二極體(LED)。發光元件3存在具有大致正方形之平面形狀者、或具有大致長方形之平面形狀者。例如,微型LED之一邊之長度為100 μm以下,小型LED之一邊之長度大於100 μm。The light-
於圖1所示之例子中,作為發光元件3,而於一方向上排列有發出紅色之紅發光元件3R、發出綠色之綠發光元件3G、及發出藍色之藍發光元件3B。In the example shown in FIG. 1, as the light-emitting
圖2及圖3係顯示圖1所示之發光裝置1之製造方法之一例之圖。2 and 3 are diagrams showing an example of the manufacturing method of the light-
首先,如圖2之(A)所示般,準備接著於支持體4之複數個發光元件3。複數個發光元件3以特定之節距排列。發光元件3具有與陽極及陰極對應之端子3T、及第1發光面3E。發光元件3於端子3T之側接著於支持體4。第1發光面3E位於與端子3T為相反側(或者與支持體4為相反側)之上表面側。First, as shown in (A) of FIG. 2, a plurality of light-emitting
接著,如圖2之(B)所示般,將片材構件5接著於發光元件3之第1發光面3E之側。即,發光元件3暫時地位於支持體4與片材構件5之間,接著於支持體4及片材構件5之兩者。再者,於片材構件5被接著於發光元件3之前,可於支持體4上將發光元件3之排列節距予以改變。其後,在發光元件3與片材構件5之接著力大於發光元件3與支持體4之接著力之狀態下,將支持體4自發光元件3剝離。Next, as shown in (B) of FIG. 2, the
藉此,如圖2之(C)所示般,維持將片材構件5接著於發光元件3之第1發光面3E之側之狀態,另一方面,端子3T之側露出。Thereby, as shown in FIG. 2(C), the state where the
接著,如圖2之(D)所示般,將發光元件3載置於傳送基板10。關於傳送基板10之詳細情況將於後述,傳送基板10具有與發光元件3之端子3T之側接觸之黏著性之保持面10A。再者,於發光元件3被載置於傳送基板10之前,可於片材構件5上將發光元件3之排列節距予以改變。亦可根據需要,在發光元件3被載置於傳送基板10之後,追加發光元件3與片材構件5之接著力下降之處理(例如紫外線照射處理)。其後,在發光元件3與片材構件5之接著力小於發光元件3與傳送基板10之接著力之狀態下,將片材構件5自發光元件3剝離。Next, as shown in (D) of FIG. 2, the light-emitting
藉此,如圖3之(E)所示般,維持傳送基板10接著於發光元件3之端子3T之側之狀態,另一方面,第1發光面3E之側露出。Thereby, as shown in FIG. 3(E), the state where the
接著,如圖3之(F)所示般,使用擷取用之治具100自傳送基板10擷取發光元件3。治具100例如為真空吸附治具,吸附發光元件3之第1發光面3E。然後,藉由將治具100向離開傳送基板10之側移動,而將發光元件3自傳送基板10之保持面10A剝離。Then, as shown in (F) of FIG. 3, the light-emitting
接著,如圖3之(G)所示般,將被治具100吸附之發光元件3朝配線基板2之上方移動,並於配線基板2之特定位置安裝發光元件3。所謂安裝,相當於將發光元件3之陽極端子及陰極端子各者,與設置於配線基板2之陽極電極及陰極電極分別電性連接。再者,於圖3之(F)及(G)中,顯示治具100傳送1個發光元件3之情形,但治具100可批次傳送複數個發光元件3。Next, as shown in (G) of FIG. 3, the light-emitting
其次,對於傳送基板10進行說明。Next, the
圖4係顯示傳送基板10之一構成例之立體圖。於傳送基板10中,供保持發光元件3之保持面10A,係具有黏著性之凹凸面。於圖4所示之構成例中,保持面10A具有自基底部10B突出之複數個凸部10V。凸部10V各者形成為大致半球狀。複數個凸部10V於第1方向X及第2方向Y上矩陣狀地排列。再者,凸部10V之形狀並不限定於圖示之例子,亦可為圓錐狀、角錐狀、圓錐台狀、角錐台狀等。又,凸部10V之排列並不限定於圖示之例子,亦可為最密填充排列、錯位排列、隨機排列等。FIG. 4 is a perspective view showing an example of the configuration of the
在圖中以虛線示出之發光元件3被保持於保持面10A之狀態下,1個發光元件3與排列於第1方向X之複數個凸部10V、及排列於第2方向Y之複數個凸部10V重疊。In the state where the light-emitting
於如此之傳送基板10中,基底部10B與凸部10V可由同一材料形成,亦可由不同之材料形成。傳送基板10中之至少凸部10V,例如使用矽系、丙烯酸系、環氧系等具有自黏性、且具有彈性之材料而形成。於本實施形態中,傳送基板10整體由同一材料形成。作為傳送基板10之製作方法,例如可舉出使用紫外線固化型、熱固化型、濕氣固化型等之材料而成型之手法、對平板狀之基材表面照射雷射光之手法、或將平板狀之基材表面進行噴砂加工之手法等。In such a
圖5係顯示傳送基板10之一構成例之剖視圖。此處,圖示出沿著圖4所示之A-B線之傳送基板10之剖面。凸部10V之剖面形狀係半圓形。FIG. 5 is a cross-sectional view showing a configuration example of the
首先,著眼於凸部10V之寬度W。此處之寬度W相當於凸部10V之沿著第1方向X之長度。於凸部10V形成為如圖4所示之半球狀之情形下,寬度W相當於俯視凸部10V時之直徑。凸部10V之底部側(與基底部10B接近之側)之寬度W1大於凸部10V之頂部側(底部之相反側、或者與發光元件3相接之側)之寬度W2(W1>W2)。凸部10V之底部(與基底部10B相接之部分)處之寬度W,例如為1至200 μm。對於1個凸部10V之寬度W,以複數個凸部10V與1個發光元件3重疊之方式,且考量發光元件3之尺寸等而設定。例如,發光元件3若為小型LED,寬度W理想為10至50 μm。又,發光元件3若為微型LED,寬度W理想為2至25 μm。First, focus on the width W of the
接著,著眼於凸部10V之高度H。此處之高度H相當於自基底部10B突出之部分之沿著第3方向(基底部10B之法線方向)Z之長度。高度H大於發光元件3之端子3T之高度Ht(H>Ht),例如為0.5至50 μm。發光元件3若為小型LED,高度H理想為10至50 μm。又,發光元件3若為微型LED,高度H理想為0.5至25 μm。Next, focus on the height H of the
接著,著眼於鄰接之凸部10V之節距P。此處之節距P係於第1方向X上鄰接之凸部10V之頂部間之沿著第1方向X之長度。節距P例如為100 μm以下。節距P係以複數個凸部10V與1個發光元件3重疊之方式,考量發光元件3之尺寸等而被設定。例如,於發光元件3為小型LED之情形下,節距P理想的是為凸部10V之寬度W以上、100 μm以下。又,於發光元件3為微型LED之情形下,節距P理想的是為凸部10V之寬度W以上、50 μm以下。於鄰接之凸部10V以於各自之底部相接之方式排列之情形下,節距P與寬度W相等。Next, focus on the pitch P of the adjacent
如上述之凹凸面即保持面10A於另一觀點而言,可被視為在鄰接之凸部10V之間具有凹部10C者。From another point of view, the above-mentioned concave-convex surface, that is, the holding
於圖5所示之構成例中,複數個凸部10V全部具有同一形狀,但複數個凸部10V之中,亦可包含具有不同形狀之凸部10V。又,鄰接之凸部10V可具有不同之寬度,或可具有不同之高度。In the configuration example shown in FIG. 5, the plurality of
圖6係用於說明傳送基板10中之發光元件3之傳送步驟之圖。FIG. 6 is a diagram for explaining the transfer step of the light-emitting
圖6之(A)係顯示圖2之(D)所示之步驟、亦即將發光元件3載置於傳送基板10之步驟之圖。當將接著於片材構件5之發光元件3朝傳送基板10按壓時,於保持面10A以凸部10V崩塌之方式變形。藉此,以發光元件3與傳送基板10之接著力大於發光元件3與片材構件5之接著力之程度,確保發光元件3與保持面10A之接觸面積。因此,可自發光元件3容易地剝離片材構件5。發光元件3與傳送基板10之接著力,可除了自黏性之保持面10A之黏著力以外,藉由發光元件3與保持面10A之接觸面積(或者,將發光元件3朝傳送基板10按壓之力)而調整。(A) of FIG. 6 is a diagram showing the step shown in (D) of FIG. 2, that is, the step of placing the light-emitting
圖6之(B)係顯示圖3之(F)所示之步驟、亦即將發光元件3自傳送基板10擷取之步驟之圖。於發光元件3自片材構件5被傳送至傳送基板10之後,由於凸部10V之形狀復原,因此發光元件3與保持面10A之接觸面積減小。即,發光元件3與傳送基板10之接著力減小。因此,在使用治具100擷取發光元件3時,可利用微弱之力予以擷取。FIG. 6(B) is a diagram showing the step shown in FIG. 3(F), that is, the step of extracting the light-emitting
作為比較例,於傳送基板10之保持面10A為平坦之情形下,保持面10A與發光元件3之端子側之面之大致整體接觸。因此,保持面10A內之發光元件3之接著力依存於構成保持面10A之材料之物性。如此之情形下,於如圖3之(F)所示之發光元件3之擷取步驟中,於發光元件3與傳送基板10之接著力過於強力時,無法順利地擷取發光元件3,而需要增強治具100之吸附力或者治具100與發光元件3之接著力。As a comparative example, in a case where the holding
根據本實施形態,藉由應用具有凹凸面即保持面10A之傳送基板10,而可將發光元件3順利地傳送至傳送基板10,從而可改善發光元件之傳送效率。According to this embodiment, by applying the
其次,對於傳送基板10之又一構成例進行說明。Next, another configuration example of the
圖7係顯示傳送基板10之又一構成例之剖視圖。FIG. 7 is a cross-sectional view showing another example of the structure of the
圖7之(A)顯示凸部10V之剖面形狀為半橢圓形之傳送基板10。FIG. 7(A) shows the
圖7之(B)顯示凸部10V之剖面形狀為三角形之傳送基板10。於凸部10V形成為圓錐狀或者角錐狀之情形下,形成如圖示之三角形之剖面形狀。FIG. 7(B) shows the
圖7之(C)顯示凸部10V之剖面形狀為梯形之傳送基板10。於凸部10V形成為圓錐台狀或者角錐台狀之情形下,形成如圖示之梯形之剖面形狀。FIG. 7(C) shows the
圖8係顯示傳送基板10之又一構成例之剖視圖。圖8所示之構成例與圖5所示之構成例相比,在鄰接之凸部10V空開間隙地排列之點上不同。於如此之構成例中,鄰接之凸部10V之節距P大於凸部10V之寬度W,理想的是100 μm以下。FIG. 8 is a cross-sectional view showing another example of the structure of the
此處,凸部10V之剖面形狀為半圓形,但亦可如圖7所示般,為半橢圓形、三角形、梯形等。Here, the cross-sectional shape of the
圖9係顯示傳送基板10之又一構成例之立體圖。圖9所示之構成例與圖4所示之構成例相比,在凸部10V為於一方向上延伸之形狀之點上不同。此處,複數個凸部10V於第1方向X上排列,凸部10V各者於第2方向Y上延伸。鄰接之凸部10V係彼此相接地排列,但亦可如圖8所示之構成例般空開間隙地排列。又,於X-Z平面內,凸部10V之剖面形狀為半圓形,但亦可為半橢圓形、三角形、梯形等。FIG. 9 is a perspective view showing another configuration example of the
圖10係顯示傳送基板10之又一構成例之立體圖。與圖4所示之構成例同樣地,於傳送基板10中,保持發光元件3之保持面10A係具有黏著性之凹凸面。保持面10A具有複數個凹部10C。凹部10C各者形成為大致半球狀,但凹部10C之形狀不限於圖示之例子,亦可為圓錐狀、角錐狀、圓錐台狀、角錐台狀等。複數個凹部10C於第1方向X及第2方向Y上矩陣狀地排列,但凹部10C之排列不限於圖示之例子,亦可為最密填充排列、錯位排列、隨機排列等。FIG. 10 is a perspective view showing another example of the structure of the
圖中在以虛線示出之發光元件3被保持於保持面10A之狀態下,1個發光元件3與排列於第1方向X之複數個凹部10C、及排列於第2方向Y之複數個凹部10C重疊。In the figure, in the state where the light-emitting
圖11係顯示傳送基板10之一構成例之剖視圖。此處,圖示出沿著圖10所示之C-D線之傳送基板10之剖面。凹部10C之剖面形狀為半圓形。FIG. 11 is a cross-sectional view showing a configuration example of the
首先,著眼於凹部10C之寬度W。此處之寬度W相當於凹部10C之沿著第1方向X之長度。於凹部10C形成為如圖10所示之半球狀之情形下,寬度W相當於俯視凹部10C時之直徑。凹部10C之底部側之寬度W1小於凹部10C之上部側之寬度W2(W2>W1)。凹部10C之上部之寬度W,與參照圖5所說明之凸部10V之寬度W同樣地,例如為1至200 μm。First, focus on the width W of the
接著,著眼於凹部10C之高度(或者深度)H。此處之高度H相當於沿著第3方向Z之長度。凹部10C之高度H與凸部10V之高度H同樣地,例如為0.5至50 μm。Next, focus on the height (or depth) H of the
接著,著眼於鄰接之凹部10C之節距P。此處之節距P相當於在第1方向X上鄰接之凹部10C之底部間之沿著第1方向X之長度。凹部10C之節距P與凸部10V之節距P同樣地,例如為凹部10C之寬度W以上、100 μm以下。Next, focus on the pitch P of the
如上述之凹凸面即保持面10A於另一觀點而言,可視為在鄰接之凹部10C之間具有凸部10V者。From another point of view, the above-mentioned uneven surface, that is, the holding
於圖11所示之構成例中,複數個凹部10C全部具有同一形狀,但複數個凹部10C之中,亦可含有具有不同形狀之凹部10C。又,鄰接之凹部10C可具有不同之寬度,或可具有不同之高度。In the configuration example shown in FIG. 11, the plurality of
圖12係顯示傳送基板10之又一構成例之剖視圖。FIG. 12 is a cross-sectional view showing another example of the structure of the
圖12之(A)顯示凹部10C之剖面形狀為半橢圓形之傳送基板10。FIG. 12(A) shows the
圖12之(B)顯示凹部10C之剖面形狀為三角形之傳送基板10。於凹部10C形成為圓錐狀或者角錐狀之情形下,形成如圖示之三角形之剖面形狀。FIG. 12(B) shows the
圖12之(C)顯示凹部10C之剖面形狀為梯形之傳送基板10。於凹部10C形成為圓錐台狀或者角錐台狀之情形下,形成如圖示之梯形之剖面形狀。FIG. 12(C) shows the
圖13係顯示傳送基板10之又一構成例之剖視圖。圖13所示之構成例與圖11所示之構成例相比,在鄰接之凹部10C空開間隙地排列之點上不同。於如此之構成例中,鄰接之凹部10C之節距P大於凹部10C之寬度W,理想的是100 μm以下。FIG. 13 is a cross-sectional view showing another example of the structure of the
此處,凹部10C之剖面形狀為半圓形,但亦可如圖12所示般,為半橢圓形、三角形、梯形等。Here, the cross-sectional shape of the
圖14係顯示傳送基板10之又一構成例之立體圖。圖14所示之構成例與圖10所示之構成例相比,在凹部10C為於一方向上延伸之形狀之點上不同。此處,複數個凹部10C於第1方向X上排列,凹部10C各者於第2方向Y上延伸。鄰接之凹部10C係彼此相接地排列,但亦可如圖13所示之構成例般空開間隙地排列。又,於X-Z平面內,凹部10C之剖面形狀為半圓形,但亦可為半橢圓形、三角形、梯形等。FIG. 14 is a perspective view showing another configuration example of the
於參照上述之圖7至圖14而說明之其他構成例中,亦可獲得與圖4等所示之構成例同樣之效果。In the other configuration examples described with reference to FIGS. 7 to 14 described above, the same effects as the configuration examples shown in FIG. 4 and the like can also be obtained.
如以上所說明般,根據本實施形態,可提供一種能夠改善發光元件之傳送效率之傳送基板。As described above, according to this embodiment, it is possible to provide a transfer substrate capable of improving the transfer efficiency of the light-emitting element.
再者,本發明並不限定於上述實施形態本身,可在實施階段中在不脫離其主旨之範圍內將構成要件予以變化而具體化。又,藉由上述實施形態所揭示之複數個構成要素之適當之組合,而可形成各種發明。例如,可自實施形態中所示之全部構成要件削除若干個構成要件。進而,亦可適當組合不同之實施形態之構成要件。 [相關申請案之相互參照]In addition, the present invention is not limited to the above-mentioned embodiment itself, and the constituent elements may be changed and embodied in the implementation stage without departing from the scope of the spirit thereof. In addition, various inventions can be formed by appropriate combinations of a plurality of constituent elements disclosed in the above-mentioned embodiments. For example, it is possible to omit several constituent elements from all the constituent elements shown in the embodiment. Furthermore, it is also possible to appropriately combine the constituent elements of different embodiments. [Cross-reference of related applications]
本發明係基於2020年1月27日提出申請之日本專利申請第2020-011030號並主張其優先權, 該日本專利申請之全部內容以引用方式併入本文。The present invention is based on Japanese Patent Application No. 2020-011030 filed on January 27, 2020 and claims its priority. The entire content of the Japanese Patent Application is incorporated herein by reference.
1:發光裝置
2:配線基板
3:發光元件
3B:藍發光元件
3G:綠發光元件
3R:紅發光元件
3E:第1發光面
3T:端子
4:支持體
5:片材構件
10:傳送基板
10A:保持面
10B:基底部
10C:凹部
10V:凸部
100:治具
A-B,C-D:線
H,Ht:高度
P:節距
W,W1,W2:寬度
X:第1方向
Y:第2方向
Z:第3方向1: Light-emitting device
2: Wiring board
3: Light-emitting
圖1係用於說明發光裝置1之圖。
圖2(A)~(D)係顯示圖1所示之發光裝置1之製造方法之一例之圖。
圖3(E)~(G)係顯示圖1所示之發光裝置1之製造方法之一例之圖。
圖4係顯示傳送基板10之一構成例之立體圖。
圖5係顯示傳送基板10之一構成例之剖視圖。
圖6(A)、(B)係用於說明傳送基板10中之發光元件3之傳送步驟之圖。
圖7(A)~(C)係顯示傳送基板10之又一構成例之剖視圖。
圖8係顯示傳送基板10之又一構成例之剖視圖。
圖9係顯示傳送基板10之又一構成例之立體圖。
圖10係顯示傳送基板10之又一構成例之立體圖。
圖11係顯示傳送基板10之一構成例之剖視圖。
圖12(A)~(C)係顯示傳送基板10之又一構成例之剖視圖。
圖13係顯示傳送基板10之又一構成例之剖視圖。
圖14係顯示傳送基板10之又一構成例之立體圖。FIG. 1 is a diagram for explaining the light-emitting
3:發光元件 3: Light-emitting element
10:傳送基板 10: Transfer substrate
10A:保持面 10A: Keep the surface
10B:基底部 10B: base part
10V:凸部 10V: convex
A-B:線 A-B: line
X:第1方向 X: 1st direction
Y:第2方向 Y: 2nd direction
Z:第3方向 Z: 3rd direction
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KR (1) | KR20210096010A (en) |
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CN119948600A (en) * | 2022-09-22 | 2025-05-06 | 琳得科株式会社 | Element transfer sheet |
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US6872635B2 (en) * | 2001-04-11 | 2005-03-29 | Sony Corporation | Device transferring method, and device arraying method and image display unit fabricating method using the same |
KR101799656B1 (en) * | 2015-12-31 | 2017-11-20 | 한국광기술원 | Light emitting diode assembly and method for transfering thereof |
KR101754528B1 (en) * | 2016-03-23 | 2017-07-06 | 한국광기술원 | Transfer assembly with dry adhesion structure and method for transferring led structure assembly using the same and led structure assembly |
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