CN110391165A - Transfer and Die Carriers - Google Patents

Abstract

The present invention discloses a kind of transfer support plate, to shift multiple micro elements on a first substrate to a second substrate.This transfer support plate includes a substrate and multiple transfer members.Those transfer members are arranged at intervals at a upper surface of the substrate.Each transfer member has opposite a first surface and a second surface.Those transfer members contact this substrate with first surface.Wherein, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of those transfer members be not identical, and the difference of the thermal expansion coefficient of the thermal expansion coefficient and those micro elements of those transfer members is less than the difference of the thermal expansion coefficient of the substrate and the thermal expansion coefficient of those transfer members.Invention additionally discloses a kind of crystal grain support plates.

Description

Transfer and Die Carriers

technical field

The invention relates to a transfer carrier and a grain carrier, in particular to a transfer carrier and a grain carrier with surface microstructures.

Background technique

Light emitting diodes (light emitting diodes, LEDs), as high-efficiency light emitting elements, are widely used in various fields. Currently, the existing manufacturing method of light-emitting devices is to sequentially form an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer and electrodes on an epitaxial substrate by means of epitaxy, thereby obtaining a light-emitting device.

When the size of the light-emitting element is reduced to the micrometer (micrometer, μm) level to form a micro-light-emitting element and applied to a display device, a micro-light-emitting element array composed of many micro-light-emitting elements is arranged on the display panel as a light source for the display device. However, the usual method of manufacturing a display device is to first form micro light-emitting elements on an epitaxial substrate. Then the micro light emitting element is removed from the epitaxial substrate by transferring the carrier plate, and then the removed micro light emitting element is arranged on the display panel. In this way, a mass transfer of micro-light-emitting elements can be achieved, and process efficiency can be improved. Furthermore, the miniature electronic components manufactured for coordinating with the miniature light-emitting devices also need to use mass transfer technology to improve process efficiency.

Generally speaking, during the transfer process, the transfer carrier will be heated in some procedures, so that the micro light-emitting devices can be temporarily fixed on the transfer carrier, or the transfer carrier can be separated from the micro light-emitting devices to allow The micro light-emitting element is arranged on the display panel. However, when the transfer carrier is heated, the structure of the transfer carrier may expand due to heat, so that the structure on the transfer carrier cannot be precisely aligned with the micro light-emitting elements on the epitaxial substrate, or temporarily fixed on the transfer substrate. The miniature light-emitting elements on the carrier board cannot be aligned with the driving circuit on the display panel, which causes troubles in the process and even reduces the overall pass rate.

Contents of the invention

The present invention provides a transfer carrier and a die carrier to solve the problem that the transfer carrier cannot be precisely aligned due to thermal expansion.

The invention discloses a transfer carrier plate. The transfer carrier is used for transferring a plurality of micro components on a first substrate to a second substrate. The transfer carrier includes a substrate and a plurality of transfer parts. The substrate has an upper surface. These transfer elements are disposed on the upper surface of the substrate. Each transfer member has a first surface and a second surface opposite to each other. The transfer elements respectively contact the substrate with the first surfaces. Wherein, the coefficient of thermal expansion of the substrate is different from that of the transfer member. The difference between the thermal expansion coefficient of the transfer member and the thermal expansion coefficient of the micro components is smaller than the difference between the thermal expansion coefficient of the substrate and the transfer member.

In the transfer carrier disclosed in the present invention, the thermal conductivity of each transfer member is greater than twice the thermal conductivity of the substrate and less than five times the thermal conductivity of the substrate.

In the transfer carrier plate disclosed in the present invention, the substrate is a sapphire substrate, and the material of the transfer element includes gallium nitride.

In the transfer carrier disclosed in the present invention, the difference between the coefficient of thermal expansion of each transfer member and the coefficient of thermal expansion of the substrate is not more than fifty percent of the coefficient of thermal expansion of the substrate and not more than a percentage of the coefficient of thermal expansion of the substrate Ten.

The transfer carrier plate disclosed by the present invention further includes a plurality of adhesive blocks arranged separately, and each adhesive block is respectively located on the second surface of one of the transfer parts.

In the transfer carrier disclosed in the present invention, each adhesive block is located within the periphery of the corresponding second surface.

In the transfer carrier plate disclosed in the present invention, a groove is formed on the second surface of each transfer member, and the adhesive blocks are respectively located in the grooves of the transfer members.

The transfer carrier plate disclosed in the present invention further includes an adhesive layer covering the upper surfaces of the transfer elements and the substrate.

According to the transfer carrier disclosed in the present invention, the thickness of the adhesive layer on the first surface is greater than the thickness of the adhesive layer on the second surface of each transfer member.

The invention also discloses a grain carrier plate. The die carrier includes a substrate, a plurality of transfer components, an adhesive layer and a plurality of micro components. The substrate has an upper surface. The transfer elements are disposed on the upper surface of the substrate. Each transfer member has a first surface and a second surface opposite to each other. The transfer elements respectively contact the substrate with the first surfaces. The adhesive layer is disposed on the second surface of the transfer parts. Each micro component is fixed on the second surface of one of the transfer parts through the adhesive layer. Wherein, the coefficient of thermal expansion of the substrate is different from that of the transfer member. The difference between the thermal expansion coefficient of the transfer member and any one of the micro components is smaller than a predetermined threshold.

In the die carrier disclosed in the present invention, the thermal conductivity of the transfer elements is greater than twice the thermal conductivity of the substrate and less than five times the thermal conductivity of the substrate.

In the chip carrier disclosed in the present invention, the substrate is a sapphire substrate, the materials of the transfer elements include gallium nitride, the micro components are micro light emitting diodes, and the materials of these micro components include gallium nitride.

The die carrier disclosed in the present invention, wherein the difference between the coefficient of thermal expansion of the transfer members and the coefficient of thermal expansion of the substrate is not more than fifty percent of the coefficient of thermal expansion of the substrate and not more than one percent of the coefficient of thermal expansion of the substrate Ten.

In the die carrier disclosed in the present invention, the adhesive layer has a plurality of adhesive blocks arranged separately, and each adhesive block is located on the second surface of one of the transfer members.

In the die carrier disclosed in the present invention, a groove is formed on the second surface of each transfer member, and each adhesive block is located in the groove of one of the transfer members.

In the die carrier disclosed in the present invention, the adhesive layer covers the upper surface of the substrate and the transfer components.

In the die carrier disclosed in the present invention, the thickness of the adhesive layer on the first surface is greater than the thickness of the adhesive layer on the second surface of each transfer member.

The above descriptions about the content of the present invention and the following descriptions of the embodiments are used to demonstrate and explain the spirit and principle of the present invention, and provide further explanations of the claims of the present invention.

Description of drawings

FIG. 1 is a schematic structural diagram of a transfer carrier according to an embodiment of the present invention.

FIG. 2A is a schematic structural diagram of a transfer carrier according to another embodiment of the present invention.

FIG. 2B is a schematic structural diagram of a transfer carrier according to another embodiment of the present invention.

FIG. 3A is a schematic diagram illustrating a micro-device transfer process between a transfer carrier plate and a first substrate according to an embodiment of the present invention.

FIG. 3B is a schematic diagram illustrating a micro-device transfer process between the transfer carrier and the first substrate according to an embodiment of the present invention.

FIG. 3C is a schematic diagram illustrating a micro-device transfer process between a transfer carrier plate and a second substrate according to an embodiment of the present invention.

FIG. 4 is a schematic structural diagram of a transfer carrier according to yet another embodiment of the present invention.

FIG. 5 is a schematic structural diagram of a transfer carrier according to yet another embodiment of the present invention.

Among them, reference signs:

1, 2, 2b, 3, 4 transfer carrier

10, 20, 30, 40 substrates

50 first substrate

60 Second substrate

12, 22, 32, 42 Transfers

242, 442 sticky blocks

52, 52a, 52b, 52c Micro Components

62 drive circuit

24, 34 Adhesive layer

2’ Die Carrier

B bump

d1 first distance

d2 second distance

g groove

S1 first surface

S2 second surface

Su upper surface

SW side wall

Ta, Tb, Tp Thickness

W width

Detailed ways

The detailed features and advantages of the present invention are described in detail below in the embodiments, which are sufficient to enable those skilled in the art to understand the technical content of the present invention and implement it accordingly, and according to the contents disclosed in this specification, claims and accompanying drawings , those skilled in the art can easily understand the related objects and advantages of the present invention. The following examples are to further describe the viewpoints of the present invention in detail, but not to limit the scope of the present invention in any way.

The transfer carrier illustrated according to the embodiments of the present invention can be used to transfer a plurality of micro devices on a first substrate to a second substrate. Wherein, the first substrate is, for example, an epitaxial substrate, on which micro components such as micro LEDs (micro LEDs) are formed, and the second substrate is, for example, a display panel. Details about the first substrate, the second substrate and the micro-components will be described later.

Please refer to FIG. 1 , which is a schematic structural diagram of a transfer carrier 1 according to an embodiment of the present invention. The transfer carrier 1 includes a substrate 10 and a plurality of transfer members 12 . The substrate 10 has an upper surface Su. The transfer elements 12 are arranged at intervals on the upper surface Su of the substrate 10 , preferably in an equidistant array, for example arranged at intervals of a distance d2 in the x direction. Each of the transfer elements 12 has a first surface S1 and a second surface S2 opposite to each other. Each transfer member 12 contacts the substrate 10 with its first surface S1 . In this embodiment, each transfer member 12 is fixed on the upper surface Su of the substrate 10 through the first surface S1 .

On the other hand, the difference between the thermal expansion coefficient of each transfer member 12 and the thermal expansion coefficient of the micro component to be transferred is smaller than the difference between the thermal expansion coefficient of the substrate 10 and the transfer member 12 . Preferably, in one embodiment, the difference between the thermal expansion coefficient of the transfer member 12 and the thermal expansion coefficient of the substrate 10 is no more than 50 percent of the thermal expansion coefficient of the substrate 10 and no less than 50 percent of the thermal expansion coefficient of the substrate 10 ten. More preferably, that is to say, when the substrate 10 and the transfer member 12 are formed of different materials, the transfer member 12 and the micro components to be transferred are made of similar materials. Generally speaking, the substrate 10 will be warped due to the stress caused by the process during the transfer process, and even the stress between the transfer member 12 and the substrate 10 may be aggravated by heating or pressing the transfer carrier 1 during use. Increased warpage of the substrate, or damage or displacement of the transfer part, thereby reducing the transfer pass rate. Since the transfer process of micro components usually involves heating and pressing processes, warping of the transfer carrier 1 will be quite unfavorable to the transfer process.

Furthermore, the thermal conductivity of the transfer member 12 is greater than twice the thermal conductivity of the substrate 10 . By selecting a material with an appropriate thermal conductivity, when the transfer carrier 1 is heated, heat energy can be concentrated on the transfer member 12, so that the transfer process is smoother and more convenient. Preferably, the thermal conductivity of the transfer member 12 is two to five times that of the substrate 10 , so as to avoid spending too much time heating the transfer carrier 1 . In one embodiment, the material of each transfer member 12 is an inorganic material, for example, an epitaxial structure mainly composed of gallium nitride (GaN), the material of the substrate is sapphire, and The micro components to be transferred are micro LED structures.

Please refer to FIG. 2A , which is a schematic structural diagram of a transfer carrier according to another embodiment of the present invention. In the embodiment shown in FIG. 2A , the structure of the transfer carrier 2 is substantially similar to the aforementioned transfer carrier 1 , including a substrate 20 and a plurality of transfer elements 22 disposed on the substrate 20 , and relevant details are not repeated here. The difference is that the transfer carrier 2 also has an adhesive layer 24 . The adhesive layer 24 has a plurality of adhesive blocks 242 . The adhesive blocks 242 are spaced apart from each other. Each adhesive block 242 is respectively located on the second surface S2 of one of the transfer elements 22 . In one embodiment, each adhesive block 242 is defined by a patterning process after coating an entire layer of adhesive material first. In another embodiment, each adhesive block 242 is formed by dipping related materials from the aforementioned transfer carrier 1 , for example. In yet another embodiment, each adhesive block 242 is individually formed on the second surface of the transfer member by, for example, dispensing glue. The material of each adhesive block 242 is, for example, black photoresist, opaque adhesive material, multi-layer chromium film or resin.

Continuing from the above, each adhesive block 242 is respectively located within the periphery of the second surface S2 of the corresponding transfer member 22 . The so-called peripheral edge of the second surface S2 refers to the edge of the second surface S2 , or refers to the junction of the second surface S2 and the sidewall SW of the transfer member 22 . From another perspective, each adhesive block 242 covers part of the second surface S2 of each transfer member 22 , and the sidewall SW of each transfer member 22 is not covered by each adhesive block 242 .

In addition to the example shown in FIG. 2A , in another similar embodiment, the edges of each adhesive block 242 are cut to align with the peripheral edge of the corresponding second surface S2 . Thereby, the second surface S2 of each transfer member 22 can be well utilized, and the surface area of the transfer carrier 2 that can be used for adhering micro components is increased.

In yet another similar embodiment, as shown in FIG. 2B (FIG. 2B is a schematic structural diagram of a transfer carrier according to another embodiment of the present invention), the adhesive block 242 covers the corresponding second surface In addition to S2 , the adhesive block 242 also extends to cover at least a part of the sidewall SW of the corresponding transfer member 22 . From another perspective, the adhesive block 242 covers the complete second surface S2 of the transfer member 22, and the adhesive block 242 extends beyond the periphery of the second surface S2 to the substrate 20 along the y-axis direction and contacts the transfer member 22 at least partially. sidewall SW. In this way, in addition to making good use of the second surface S2 of the transfer member 22 to increase the surface area of the transfer carrier 2b for adhering micro components, each adhesive block 242 can be more firmly attached to the corresponding transfer member 22 .

Please refer to FIG. 3A to FIG. 3C to illustrate how the transfer carrier is used, so as to better understand the design considerations of related components. FIG. 3A and FIG. 3B are the transfer carrier and the first substrate according to an embodiment of the present invention. 3C is a relative schematic diagram of the transfer carrier and the second substrate in the third stage of the micro-component transfer process according to an embodiment of the present invention. In FIGS. 3A to 3C , the transfer carrier 2 in FIG. 2A is taken as an example for illustration. In addition, the first substrate 50 and the micro components 52a, 52b, 52c thereon are also shown in FIGS. 3A to 3B , and the second substrate 60 and the driving circuit 62 thereon are also shown in FIG. 3C .

As shown in FIG. 3A, a plurality of micro-elements 52 are arranged on the first substrate 50. Here, the micro-elements 52a, 52b, and 52c are taken as examples for illustration, but the number and arrangement of the micro-elements 52a, 52b, and 52c are not necessarily the same. limit. The micro components 52 a , 52 b , 52 c are, for example, micro light emitting diodes (micro LEDs), which include a P-type doped layer, an N-type doped layer, a light-emitting layer and an electrode layer. The above is just an example, and the actual implementation of the micro light emitting diode is not limited thereto. In other embodiments, the microcomponents may also be electronic components that require a large amount of transfer, such as microchips, microsensors, and the like.

Each micro-element 52a, 52b, 52c is arranged on the first substrate 50 at intervals of a first distance d1 along the x-axis direction shown in the figure. In contrast, the transfer elements 22 of the transfer carrier 2 are arranged at intervals of the second distance d2 on the substrate 20 along the x-axis direction. The second distance d2 is different from the first distance d1. In this embodiment, the second distance d2 is greater than the sum of the first distance d1 and the width W of the micro-component 52 to achieve selective pick-up (selective pick-up) to adjust the micro-component 52 is transferred to the second substrate 60. spacing. In practice, the micro-LEDs (micro-elements 52 ) of the same color are transferred to the substrate of the display panel by using the transfer carrier 2, and the micro-LEDs of the same color belong to different pixel units, so generally speaking, the second distance d2 The size of is related to the relative distance of pixels on the display panel.

As shown in FIG. 3A and FIG. 3B , firstly, each adhesive block 242 on the transfer carrier 2 is in contact with the corresponding micro-component 52 a on the first substrate 50 . Next, the transfer carrier 2 and the first substrate 50 are heated and other necessary processes are performed, so that the micro components 52a are adhered to be separated from the first substrate 50 by each adhesive block 242, and the adhered micro components 52a Temporarily fixed on the transfer carrier 2 (as shown in FIG. 3B ) to form a die carrier 2 ′.

Then, as shown in FIG. 3C , the die carrier 2' is docked with a second substrate 60 so that the micro-component 52a is bonded to the corresponding driving circuit 62 on the second substrate 60. In practical equipment operation, the die carrier 2' can be moved to bond with the second substrate 60, or the first substrate 50 and the second substrate 60 can be moved so that the second substrate 60 is placed on the die carrier 2' docking position. Then, the substrate 20 and the second substrate 60 are heated and other necessary processes are also performed, so that the micro-component 52a is separated from the transfer carrier 2 and fixed on the predetermined position of the second substrate 60 through bumps (bump) B Each micro-element 52 a is also electrically connected to the driving circuit 62 of the second substrate 60 through each corresponding bump B. In the drawings of this embodiment, the driving circuit 62 is shown as an individual circuit, but in practice, the driving circuit 62 can also be an integrated circuit, and different contacts are electrically connected to each micro element.

By repeating the above steps, the remaining micro components 52 b and 52 c on the first substrate 50 are sequentially transferred to the second substrate 60 and electrically connected to the driving circuit 62 on the second substrate 60 . In this embodiment, the micro components 52 a , 52 b , 52 c are micro light emitting diodes, which can emit light according to the driving signal provided by the driving circuit 62 of the second substrate 60 to form a micro light emitting diode display panel.

During the transfer process, it is usually necessary to heat when picking up and bonding, and the heat energy is usually concentrated on the transfer member 22, so that the deformation of the transfer member 22 due to thermal expansion will have more influence on the relative position of the transfer member 22 than the substrate 20. The effect caused by thermal expansion is large. In one embodiment, the difference between the thermal expansion coefficients of each micro-element and the thermal expansion coefficient of the transfer member 22 is less than a preset threshold value. In this embodiment, the substrate 20 and the first substrate 50 are made of the same material (for example, both are sapphire Substrate sapphire), while the transfer member 22 and the micro-element 52 are made of the same material (GaN epitaxial layer). In one embodiment, the difference between the thermal expansion coefficient of the microcomponent and the thermal expansion coefficient of the transfer member 22 is no more than ten percent of the thermal expansion coefficient of the microcomponent. Thereby, the offset of the relative position of the transfer member 22 on the substrate 20 due to thermal expansion is similar to the offset of the relative position of the micro-device 52 on the first substrate 50 due to thermal expansion. In other words, by properly selecting the coefficient of thermal expansion of the transfer member 22, the relative position of each transfer member 22 on the substrate 20 can correspond to the relative position of the micro-component 52 on the first substrate 50, thereby improving the transfer of the micro-component 52. Pass rate.

Referring to FIG. 4 , FIG. 4 is a schematic structural diagram of a transfer carrier 3 according to another embodiment of the present invention. In the embodiment shown in FIG. 4 , the structure of the transfer carrier 3 is similar to that of the aforementioned transfer carrier 1 , including a substrate 30 and a plurality of transfer members 32 disposed on the substrate 30 , and relevant details are not repeated here. The difference is that the transfer carrier 3 also has an adhesive layer 34 . The adhesive layer 34 is disposed on the transfer member 32 and the upper surface Su of the substrate 30 . The adhesive layer 34 can be formed by coating (or spin coating) in the semiconductor layer, or can be formed by pasting or sticking related materials on the transfer carrier 3 . In this embodiment, the adhesive layer 34 is formed on the substrate 30 and the transfer member 32 by coating, and the thickness Tb of the adhesive layer 34 on the upper surface Su is greater than that of the adhesive layer 34 on the second surface S2 of the transfer member 32. Thickness Ta. In addition, the thickness Ta is smaller than the thickness Tp of each transfer member 32 . The ratio of the thickness Tp to the thickness Ta is 1.5-15. If the thickness Tp of the transfer member 32 is too small, it is easy to stick to the adjacent micro-components during pick-up. If the thickness Tp is too large, the heating effect will be poor during bonding and the process efficiency will be reduced. In some embodiments, the thickness Tp and the thickness Ta are respectively 4.5 microns and 2.5 microns; or respectively 10 microns and 2.5-5 microns; or respectively 30 microns and 2.5-5 microns.

Please refer to FIG. 5 again. FIG. 5 is a schematic structural diagram of a transfer carrier 4 according to yet another embodiment of the present invention. The structure of the transfer carrier 4 is similar to the structure of the aforementioned transfer carrier 2, including a substrate 40, a plurality of transfer pieces 42 arranged on the substrate 40, and a plurality of adhesive blocks 442 spaced apart from each other, and each adhesive block 442 is located on each Relevant details of the second surface S2 of the transfer member 42 will not be repeated. The difference is that the second surface S2 of the transfer member 42 of the transfer carrier 4 is formed with a groove g. The adhesive blocks 442 are respectively disposed in the grooves g. Thereby, the adhesive block 442 can be more firmly connected with the corresponding transfer member 42 .

Referring to the related description of FIG. 3B and the die carrier, those skilled in the art can understand that the implementation described in FIG. 4 and FIG. 5 can also be applied to the aforementioned die carrier after reading this specification carefully. The relevant details are in This will not be repeated here.

Based on the above, the present invention provides a transfer carrier and a die carrier. The transfer carrier has a similar structure to the die carrier. The transfer carrier is used to transfer the micro components (especially for micro light emitting diodes) on the first substrate to the second substrate. For the transfer carrier, the thermal expansion coefficient of the substrate of the transfer carrier is different from that of the transfer parts of the transfer carrier, that is to say, it is made of different materials; moreover, the thermal expansion coefficient of these transfer parts is different from that of the micro The difference between the coefficients of thermal expansion of the element is smaller than the difference between the coefficients of thermal expansion of a substrate and the coefficient of thermal expansion of the transfer member. Since the transfer carrier is usually heated simultaneously with the first substrate, when the transfer carrier is heated and expanded, the first substrate is also heated and expanded simultaneously. With the transfer carrier provided by the present invention, the microstructures on the transfer carrier can be accurately aligned with the micro components on the first substrate, so that the micro components can be removed from the first substrate smoothly and accurately. On the other hand, the die carrier can be said to be a transfer carrier on which micro components are temporarily fixed. Through the above-mentioned structure, the micro components on the die carrier can be accurately aligned with the second substrate, so that each micro component can be accurately aligned. The bonding point disposed on the second base plate can improve the overall manufacturing yield.

Although the present invention is disclosed above with the foregoing embodiments, they are not intended to limit the present invention. Without departing from the spirit and scope of the present invention, all changes and modifications made belong to the scope of patent protection of the present invention. For the scope of protection defined by the present invention, please refer to the appended claims.

Claims (17)

1. a kind of transfer support plate, to shift multiple micro elements on a first substrate to a second substrate, which is characterized in that The transfer support plate includes:

One substrate has a upper surface；And

Multiple transfer members, are set to the upper surface of the substrate, and each transfer member has an opposite first surface and one second Surface, those transfer members contact the substrate respectively with those first surfaces；

Wherein, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of those transfer members be not identical, the thermal expansion of those transfer members The difference of the thermal expansion coefficient of coefficient and those micro elements is less than the thermal expansion coefficient of the substrate and the heat of each transfer member The difference of the coefficient of expansion.

2. transfer support plate according to claim 1, which is characterized in that the thermal conductivity coefficient of each transfer member is greater than the substrate Twice of thermal conductivity coefficient, less than five times of thermal conductivity coefficient of the substrate.

3. transfer support plate according to claim 1, which is characterized in that the substrate is sapphire substrate, the material of the transfer member Material includes gallium nitride.

4. transfer support plate according to claim 1, which is characterized in that the thermal expansion coefficient of each transfer member and the substrate Thermal expansion coefficient difference no more than the substrate thermal expansion coefficient 50 percent and be not more than the substrate thermal expansion The 10 of coefficient.

5. transfer support plate according to claim 1, which is characterized in that it further include multiple adhesion blocks for separating setting, it is each The adhesion block is located at the second surface of one of those transfer members.

6. transfer support plate according to claim 5, which is characterized in that each adhesion block is located at the corresponding second surface Periphery within.

7. transfer support plate according to claim 6, which is characterized in that it is recessed that the second surface of each transfer member forms one Slot, those adhesion blocks are located in those grooves of those transfer members.

8. transfer support plate according to claim 1, which is characterized in that further include an adhesion coating, which covers those The upper surface of transfer member and the substrate.

9. transfer support plate according to claim 8, which is characterized in that the adhesion coating is greater than in the thickness on the first surface The adhesion coating is in the thickness on the second surface of each transfer member.

10. a kind of crystal grain support plate characterized by comprising

One substrate has a upper surface；

Multiple transfer members, are set to the upper surface of the substrate, and each transfer member has an opposite first surface and one the Two surfaces, those transfer members contact the substrate respectively with those first surfaces；

One adhesion coating is set on those second surfaces of those transfer members；And

Multiple micro elements are located on the adhesion coating, and each micro element is bonded to those corresponding turns by the adhesion coating Move one of part；

Wherein, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of those transfer members be not identical, the thermal expansion of those transfer members The difference of the thermal expansion coefficient of coefficient and those micro elements is less than a default threshold value.

11. crystal grain support plate according to claim 10, which is characterized in that the thermal conductivity coefficient of those transfer members is greater than the substrate Twice of thermal conductivity coefficient, less than five times of the thermal conductivity coefficient of the substrate.

12. crystal grain support plate according to claim 10, which is characterized in that the substrate is sapphire substrate, those transfer members Material include gallium nitride, those micro elements be micro-led and those micro elements material include gallium nitride.

13. crystal grain support plate according to claim 10, which is characterized in that the thermal expansion coefficient of those transfer members and the substrate Thermal expansion coefficient difference no more than the substrate thermal expansion coefficient 50 percent and be not more than the substrate thermal expansion The 10 of coefficient.

14. crystal grain support plate according to claim 10, which is characterized in that the adhesion coating has multiple adhesions for separating setting Block, each adhesion block are located at the second surface of one of those transfer members.

15. crystal grain support plate according to claim 14, which is characterized in that the second surface of each transfer member forms one Groove, each adhesion block are located in the groove of one of those transfer members.

16. crystal grain support plate according to claim 10, which is characterized in that the adhesion coating cover the upper surface of the substrate with Those transfer members.

17. crystal grain support plate according to claim 16, which is characterized in that the adhesion coating is big in the thickness on the first surface In the adhesion coating in the thickness on the second surface of each transfer member.