TW202138931A - Exposure device, pattern-forming device, and exposure method to suppress the reduction of pattern-forming accuracy in MMG technology - Google Patents

Abstract

[Subject] Suppresses the decrease in the accuracy of pattern formation in the MMG technology. [Solution] The exposure apparatus for scanning and exposing the first pattern on the substrate has: a mark forming section that forms a plurality of alignment marks on the substrate; and a first measurement section that measures the positions of the plurality of alignment marks formed by penetrating the mark forming section And an output unit for outputting the position information of the alignment mark measured by the first measuring unit in order to be used in another exposure device for exposing the second pattern; wherein the mark forming unit is formed at the first substrate position and includes at least 2 After the first mark group of the two alignment marks, the substrate is moved to a second substrate position including at least two components in a direction that includes a component perpendicular to the straight line connecting the two alignment marks of the first mark group. The second mark group of the alignment mark scans and exposes the first pattern in a direction that moves the substrate from the first substrate position to the second substrate position.

Description

Exposure device, pattern forming device and exposure method

The present invention relates to an exposure device that exposes a pattern on a substrate, a pattern forming device that forms a pattern, and an exposure method.

In recent years, in flat panel displays (FPD), the size of the mask has increased. Nowadays, it is necessary to use the substrate as the base of the panel without waste. For this reason, a technique called MMG (Multi Model on Glass) in which a plurality of panels of different sizes are formed on a single substrate has been proposed (refer to Patent Document 1). In such MMG technology, the overall size and position of a plurality of patterns of a layer formed on a substrate by a plurality of devices are used as an evaluation index of the accuracy of pattern formation. [Prior Technical Literature]

[Patent Document 1] JP 2005-092137 A [The problem to be solved by the invention]

In a plurality of devices used in MMG technology, individual differences may occur in pattern formation characteristics. In this case, the positional relationship of the plurality of patterns respectively formed by the plurality of devices is shifted from the target position, making it difficult to accurately form the pattern on the substrate.

Therefore, an object of the present invention is to provide a technique that is advantageous in order to suppress the decrease in the accuracy of pattern formation in the MMG technique.

[Technical means to solve the problem]

In order to achieve the above object, an exposure apparatus as an aspect of the present invention is an exposure apparatus that scans and exposes a first pattern on a substrate, and exposes a second pattern in an area different from the area where the first pattern is exposed. The first pattern that is scanned and exposed before exposure in a different exposure device has: a mark forming portion that forms a plurality of alignment marks on the substrate; and a first measurement portion that measures through the mark forming portion The positions of the plurality of alignment marks thus formed; and an output unit for outputting the position information of the alignment marks measured by the first measurement unit in order to be usable in another exposure device that exposes the second pattern; wherein, After the mark forming portion forms a first mark group including at least two alignment marks on the first substrate position, the substrate is moved to include a straight line connecting the two alignment marks of the first mark group to be perpendicular The second substrate position in the direction of the component forms a second mark group including at least two alignment marks, and the first pattern is scanned and exposed in a direction that moves the substrate from the first substrate position to the second substrate position .

The further purpose or other aspects of the present invention will be clarified by the preferred embodiments described below with reference to the drawings. Other features of the present invention will be clarified by the following embodiments (refer to the drawings). [Compared with the effect of the previous technology]

According to the present invention, for example, it is possible to provide a technique that is advantageous in order to suppress a decrease in the accuracy of pattern formation in the MMG technique.

In the following, preferred embodiments of the present invention will be described in detail based on the drawings.

<First Embodiment> The formation system according to the first embodiment of the present invention will be described. The forming system of the present embodiment is a system that executes the so-called MMG technique in which a plurality of patterning devices are used to form patterns in areas different from each other in one layer on a substrate. Examples of the pattern forming device include an exposure device that scans and exposes a substrate and transfers the pattern of a mask to the substrate, an imprint device that uses a mold to form a pattern of an imprint material on the substrate, and a pattern that uses a charged particle beam to form a pattern on the substrate. Devices, etc.

In addition, the "1 layer on the substrate" to which the MMG technology related to the present invention is applied may be, for example, the first layer that is initially formed on a bare board that has not yet been patterned, but it is not limited to this, and may be the second layer or later. . In this embodiment, an example in which a latent image pattern is formed on one resist layer on a substrate using a formation system having a plurality of exposure devices will be described. Here, in terms of the substrate, for example, a glass plate, a semiconductor wafer, etc. can be applied, but in this embodiment, an example in which a glass plate is used as the substrate will be described. In addition, in the following, only "one layer on the substrate" may be referred to as "on the substrate".

FIG. 1 is a schematic diagram illustrating the overall structure of the forming system 100 of this embodiment. Let the direction perpendicular to the surface of the substrate W be the Z direction, and let the direction perpendicular to the Z direction be the X and Y directions. The forming system 100 includes a first exposure device 10, a second exposure device 20, a conveying unit 30, and a main control unit 40. The transport unit 30 transports the substrate W to the first exposure device 10 and the second exposure device 20. The main control unit 40 is constituted by, for example, a computer having a CPU and a memory, and controls the entire system 100 as a whole. In addition, the main control unit 40 controls the transfer of data and information between the first exposure device 10 and the second exposure device 20.

FIG. 2 is a diagram illustrating a configuration example of the first exposure device 10. The first exposure apparatus 10 has a pattern forming part 11, a mark forming part 12, a mark measuring part 13, and a control part 14. The pattern forming unit 11 includes a light source 11a, an illumination optical system 11b, a mask stage 11c, a projection optical system 11d, and a substrate stage 11e. The mask table 11c is a stage that can hold the mask M and move. The illumination optical system 11b uses light from the light source 11a to illuminate the mask M. The substrate stage 11e is a stage that can move the substrate W while holding it. The mask M and the substrate W are arranged at an optically conjugate position via the projection optical system 11d. The projection optical system 11d projects the pattern of the mask M illuminated by the illumination optical system 11b onto the substrate W, and a latent image pattern is formed on the resist layer on the substrate W.

The mark forming unit 12 forms an alignment mark on the substrate W based on information indicating the coordinates of the target position where the alignment mark should be formed. The mark measuring section 13 measures the position of the alignment mark formed through the mark forming section 12. The control unit 14 is composed of, for example, a computer with a CPU, a memory, etc., and controls the pattern forming unit 11, the mark forming unit 12, and the mark measurement unit 13 according to the device coordinate system (that is, controls each process through the first exposure device 10) . In addition, the control unit 14 functions as an output unit that outputs data and information obtained in the first exposure device 10 in order to be usable in the second exposure device 20. In this embodiment, although the control unit 14 is configured to be a different body from the main control unit 40, it may be a component of the main control unit 40.

The second exposure device 20 has a pattern forming unit 21, a mark measurement unit 23, and a control unit 24. The second exposure apparatus 20 of the present embodiment is different from the first exposure apparatus 10 in that the mark forming portion is not provided, and the other configuration is the same. That is, the pattern forming part 21 and the mark measuring part 23 of the second exposure apparatus 20 can be configured to be the same as the pattern forming part 11 and the mark measuring part 13 of the first exposure apparatus 10, respectively. In addition, the second exposure device 20 may also be provided with a mark forming portion. The pattern forming part 21 forms a latent image pattern in an exposure area different from the exposure area of the pattern formed on the board|substrate W by the 1st exposure apparatus 10, for example. The mark measuring section 23 measures the position of the alignment mark formed through the mark forming section 12 of the first exposure device 10. The control unit 24 is composed of, for example, a computer having a CPU, a memory, etc., and controls the pattern forming unit 21 and the mark measurement unit 23 according to the device coordinate system (that is, controls each process through the second exposure device 20). In the present embodiment, although the control unit 24 is configured to be a different body from the main control unit 40, it may also be a component of the main control unit 40.

[About pattern formation accuracy] Next, the accuracy of pattern formation determined by the formation system 100 will be described with reference to FIG. 3. The first pattern P1 is formed through the pattern forming portion 11 of the first exposure device 10. The second pattern P2 is formed in an exposure area different from the exposure area in which the first pattern P1 is formed through the pattern forming portion 21 of the second exposure device 20. In the example shown in FIG. 3, although the first pattern P1 and the second pattern P2 are formed on the rectangular substrate W with the same size on the substrate, they are not limited to this, and may have different sizes and sizes. number.

The formation accuracy of the pattern determined by the formation system 100 can be evaluated based on the overall size and position of the pattern formed on the substrate. The size of the entire pattern formed on the substrate can be defined by, for example, a first index TP (Total Pitch) indicating the length of the diagonal of the entire pattern formed on the substrate. In the present embodiment, the lower right end point EP1 of the first pattern P1 formed on the substrate by the first exposure device 10 and the upper left end point EP2 of the second pattern P2 formed on the substrate by the second exposure device 20 The length of the connected straight line can be determined as the first index TP. On the other hand, the position of the entire pattern formed on the substrate can be defined by, for example, a second index CS (Center Shift) indicating the position of the center point of the entire pattern formed on the substrate. In this embodiment, the center point of the straight line connecting the end point EP1 and the end point EP2 can be determined as the second index CS.

[Comparative example] The comparative example of this embodiment is an example in the case where the pattern forming part 11 of the first exposure apparatus 10 forms three alignment marks on the substrate W. As shown in FIG. In the example shown in FIG. 4, three marks AM1 to AM3 are formed in the vicinity of the four corners of the rectangular substrate W so as not to be arranged on the same straight line. When the three marks AM1 to AM3 are formed on the substrate W in this way, the X-direction offset, the Y-direction offset, and the rotation around the Z axis of the substrate W can be obtained from the measurement results of the positions of the three marks AM1 to AM3. , X-direction magnification, Y-direction magnification.

In the forming system 100, it is necessary to form a pattern on the substrate W so that the above-mentioned first index TP and the second index CS fall within the allowable range, respectively. In the case of two mark forming portions 12, the following order can be considered: first, the mark AM1 and the mark AM2 are formed at the same time as shown in FIG. 5(a); The stage 11e moves in the Y direction to form the mark AM3.

However, in the first exposure apparatus 10, there may be errors caused by the substrate stage 11e moving in a direction shifted from the Y direction as shown in FIG. 5(c), that is, errors caused by the drift of the substrate stage 11e may sometimes occur . Hereinafter, this error is referred to as drift of the substrate stage 11e. When there is a drift of the substrate stage 11e, the position where the mark AM3 is formed is formed at a position shifted from the originally expected position to be formed.

Based on the measurement results of the positions of the marks AM1 to AM3 formed in this way, the drift of the substrate stage 11e cannot be accurately obtained. Therefore, it may become difficult to form a pattern on the substrate W so that the first index TP and the second index CS fall within the allowable range, respectively. In terms of specific examples, the control unit 24 may erroneously determine the drift of the substrate stage 11e and the deviation of the rotation direction around the Z axis when the substrate W is placed on the substrate stage 11e, which may reduce the accuracy of pattern formation. In addition, when the drift of the substrate stage occurs in the second exposure device 20, and when the drift of the substrate stage occurs in both the first exposure device 10 and the second exposure device 20, the pattern formation accuracy may be reduced.

[Pattern Formation Process of this Embodiment] In this embodiment, in order to determine the drift of the substrate stage 11e, not the formation of three alignment marks as shown in FIG. 4 but the formation of four marks AM1 to AM4 as shown in FIG. 6. In order to improve the correction accuracy of pattern formation, it is preferable to form the four marks AM1 to AM4 in the vicinity of the four corners of the substrate W, and the area connecting the four marks AM1 to AM4 includes the area connected by the first exposure device 10 and the second exposure device 10 and the second exposure device. The exposure area where the exposure device 20 performs exposure. Through the measurement of the four alignment marks, the drift of the substrate stage 11e can also be accurately determined. In terms of specific examples, the control unit 24 can determine whether there is drift of the substrate stage 11e as shown in FIG. 7(a) and when the substrate W is placed on the substrate stage 11e as shown in FIG. 7(b) In the case of the deviation of the rotation direction around the Z axis. Accordingly, when drift of the substrate stage 11e occurs, the second exposure device 20, which is also controlled by the control unit 24, performs correction corresponding to the drift of the substrate stage 11e during pattern formation, so that pattern formation can be suppressed Decrease in accuracy.

As an example of the method of correcting the pattern formation position, the control unit 24 controls the driving and rotation of an optical element (for example, two parallel flat plates) that is one of the components of the projection optical system of the second exposure device 20. By driving and rotating the optical element, the exposure position on the substrate W can be corrected (for example, the Y direction is the direction of scanning exposure, and the magnification of the X direction is the direction perpendicular to the direction of scanning exposure).

In addition, in the first exposure device 10 and the second exposure device 20 used in the formation system 100, individual differences may occur due to the deviation of the exposure center specific to the device. The characteristic refers to, for example, the error of the device coordinate system and the error that occurs when the substrate W is placed. In this way, when an individual difference in characteristics occurs between the first exposure device 10 and the second exposure device 20, the positional relationship between the first pattern P1 formed by the first exposure device 10 and the second pattern P2 formed by the second exposure device 20 may be Offset from the target position relationship. As a result, the first index TP, which is the size of the entire pattern, and the second index CS, which is the position of the entire pattern, may not fall within the allowable range. For example, even if the accuracy required by the first index TP is within 10 μm, it may not fall within the allowable range.

Therefore, in the formation system 100 of the present embodiment, the position of the alignment mark measured by the mark measurement section 13 of the first exposure device 10 and the position of the alignment mark measured by the mark measurement section 23 of the second exposure device 20 are obtained. The difference in location. Based on this difference, the exposure area of the second pattern P2 formed on the substrate W is corrected in the coordinate system of the second exposure device 20. Specifically, it is determined that the shift in the positional relationship between the first pattern P1 and the second pattern P2 due to the individual difference in the pattern formation characteristics of the first exposure device 10 and the second exposure device 20 is corrected. The exposure area of the second pattern P2 on the substrate W.

In addition, in the present embodiment, the exposure area of the second pattern P2 is corrected by calculating the difference. However, for example, the first pattern P1 and the second pattern P1 may be determined in each of the first exposure device 10 and the second exposure device 20. The method of exposing the area of the second pattern P2.

Hereinafter, the pattern formation process on the substrate W in the formation system 100 of this embodiment will be described with reference to FIG. 8. FIG. 8 is a flowchart illustrating the pattern formation process on the substrate W related to this embodiment. The procedures shown in the flowchart of FIG. 8 can be executed based on the control through the main control unit 40. In addition, in FIG. 8, although the number of mark forming portions 12 is assumed to be two, the number of mark forming portions 12 may be one, or there may be three or more. In addition, in FIG. 8, the number of marker measurement units 13 and 23 is assumed to be two, but the number of marker measurement units 13 may be one, or there may be three or more.

In step S11, the substrate W is transported to the first exposure apparatus 10 through the transport section 30. In step S12, based on the information indicating the coordinates of the target position to be formed, in the coordinate system of the first exposure device 10, the mark AM1 and the mark AM2 are simultaneously formed on the substrate W through the mark forming portion 12 of the first exposure device 10 (the first 1 tag group). That is, the mark AM1 and the mark AM2 (first mark group) are formed on the target position coordinates in the coordinate system of the first exposure device 10.

In step S13, in the coordinate system of the first exposure device 10, the mark measurement unit 13 of the first exposure device 10 measures the difference between the marks AM1 and AM2 (first mark group) formed on the substrate W in the process of S12. Location.

In step S14, in order to move the substrate W to the substrate position for forming the marks AM3 and AM4 (the second mark group), the substrate stage 11e holding the substrate W is moved.

In step S15, based on the information indicating the coordinates of the target position to be formed, in the coordinate system of the first exposure device 10, the mark AM3 and the mark AM4 are simultaneously formed on the substrate W through the mark forming portion 12 of the first exposure device 10 (the first 2 tag group). That is, the mark AM3 and the mark AM4 (the second mark group) are formed at the target position coordinates in the coordinate system of the first exposure device 10. At this time, when there is a drift of the substrate stage 11e, the mark AM3 and the mark AM4 (the second mark group) are formed at a position shifted from the original position as shown in FIG. 7(a).

In step S16, in the coordinate system of the first exposure device 10, the mark measurement unit 13 of the first exposure device 10 measures the difference between the marks AM3 and the marks AM4 (the second mark group) formed on the substrate W in the procedure of S15. Location. Through the process of S13 and the process of S16, the mark coordinate information C1 of the position coordinates of the marks AM1 to AM4 displayed in the coordinate system of the first exposure device 10 can be obtained. This mark coordinate information C1 has an error component CM1 inherently generated in the first exposure device 10 and a formation error component CMX of the alignment mark passing through the mark forming portion 12.

In step S17, based on the position information showing the coordinates of the target position where the first pattern P1 should be formed, the first pattern is formed on the substrate W through the pattern forming section 11 of the first exposure device 10 in the coordinate system of the first exposure device 10 P1.

In step S21, the substrate W is transported from the first exposure apparatus 10 to the second exposure apparatus 20 through the transport section 30. In step S22, in the coordinate system of the second exposure device 20, the marks AM1 to AM4 (first mark Group and the 2nd marker group). Thereby, the mark coordinate information C2 of the position coordinates of the marks AM1 to AM4 (the first mark group and the second mark group) displayed in the coordinate system of the second exposure device 20 can be obtained. This mark coordinate information C2 has an error component CM2 inherently generated in the second exposure device 20 and a formation error component CMX of the alignment mark passing through the mark forming portion 12.

In step S23, the correction value CV used when forming the second pattern P2 on the substrate W is obtained in the coordinate system of the second exposure device 20. The correction value CV is used to correct the individual difference in the characteristics of the first exposure device 10 and the second exposure device 20, that is, it is used to correct errors inherently generated in the first exposure device 10 and inherent in the second exposure device 20. The difference of the error caused by the ground can be obtained by the following equation (1).

CV=C2-C1 =(CM2+CMX)-(CM1+CMX) =CM2-CM1 …(1) In equation (1), the difference between the mark coordinate information C1 obtained by the first exposure device 10 in the process of S16 and the mark coordinate information C2 obtained by the second exposure device 20 in the process of S22 is calculated as the correction value CV. The mark coordinate information C1 and the mark coordinate information C2 commonly include the formation error component CMX of the alignment mark. For this reason, the correction value CV is the difference between the error component CM1 inherently generated in the first exposure device 10 and the error component CM2 inherently generated in the second exposure device 20 after removing the formation error component CMX of the alignment mark. Therefore, when the formation error component CMX of the alignment mark passing through the mark forming portion 12 is generated, the correction by difference in this embodiment is preferable.

In step S24, based on the position information showing the coordinates of the target position where the second pattern P2 should be formed, the second pattern is formed on the substrate W through the pattern forming portion 21 of the second exposure device 20 in the coordinate system of the second exposure device 20 P2. At this time, the position of the second pattern P2 formed on the substrate W is determined in the coordinate system of the second exposure device 20 based on the correction value CV obtained in the program of S23. As a result, the first index TP as the size of the entire pattern and the second index CS as the position of the entire pattern can each fall within the allowable range. In step S25, the substrate W is transported out of the second exposure apparatus 20 through the transport section 30.

As described above, the forming system 100 of this embodiment determines that the second exposure device 20 is formed on the substrate based on the difference between the mark coordinate information C1 obtained in the first exposure device 10 and the mark coordinate information C2 obtained in the second exposure device 20 The position of the second pattern P2 on W. In addition, by forming four alignment marks as shown in FIG. 6, the drift of the substrate stage 11e can also be obtained, so that the reduction of the pattern formation accuracy due to the MMG technology can be prevented.

In terms of other effects of this embodiment, compared to the case where the number of alignment marks is three, the correction accuracy of each correction component (especially the X-direction magnification and Y-direction magnification of the substrate W) can be improved, and it can also be expected to use The effect of improving the accuracy of pattern formation through MMG technology.

In addition, the number of alignment marks formed in this embodiment may be 5 or more. For example, as shown in FIG. 9, when there are six alignment marks, there are marks AM5 and 6 between marks AM1 to 4, so that correction components can be added. Specifically, it is possible to correct the non-linear component of the X-direction magnification and the Y-direction magnification of the substrate W. In this way, increasing the number of alignment marks makes it possible to expect the effect of improving the accuracy of pattern formation through the MMG technology.

<Second Embodiment> In the first embodiment, a case where the marks AM1 to AM4 are formed on the substrate W through the mark forming portion 12 of the first exposure device 10 will be described. In contrast, in the present embodiment, a description will be given of a case where the marks AM1 to AM4 are formed on the substrate W through an apparatus other than the first exposure apparatus 10. That is, the substrate W is transported to the first exposure apparatus 10 through the transport section 30 in a state where the marks AM1 to AM4 are formed on the substrate W. In this case, it is not necessary to provide the mark forming part 12 of the first exposure apparatus 10 shown in FIG. 2. The reason for providing the mark forming portion 12 is, for example, when the pattern formation accuracy of the alignment mark formed by a device other than the first exposure device 10 becomes insufficient, in order to align the mark forming portion 12 The mark is formed on the substrate W again.

The pattern formation process on the substrate W in the formation system 100 of this embodiment is the same except for the formation procedure of the alignment mark. The procedures other than the procedure of S12 and the procedure of S15 shown in the flowchart of the first embodiment of FIG. 8 are the same.

As described above, in this embodiment, the alignment mark is formed on an external device, and the difference between the mark coordinate information C1 in the first exposure device 10 and the mark coordinate information C2 in the second exposure device 20 is used to determine the size of the second pattern P2. Exposure area. In addition, by forming four alignment marks, the drift of the substrate stage 11e can also be obtained, so that the reduction of the pattern formation accuracy due to the MMG technology can be prevented.

In terms of other effects of this embodiment, compared to the case where the number of alignment marks is three, the correction accuracy of each correction component (especially the X-direction magnification and Y-direction magnification of the substrate W) can be improved, and it can also be expected to use The effect of improving the accuracy of pattern formation through MMG technology.

In addition, the number of alignment marks formed in this embodiment may be 5 or more. For example, as shown in FIG. 9, when there are six alignment marks, there are marks AM5 and 6 between marks AM1 to 4, so that correction components can be added. Specifically, it is possible to correct the non-linear component of the X-direction magnification and the Y-direction magnification of the substrate W. In this way, increasing the number of alignment marks makes it possible to expect the effect of improving the accuracy of pattern formation through the MMG technology.

<Implementation of the manufacturing method of the article> The method of manufacturing an article related to the embodiment of the present invention is suitable for manufacturing, for example, a flat panel display (FPD). The manufacturing method of the article of the present embodiment includes a process of forming a latent image pattern on a photosensitive agent coated on a substrate using the above-mentioned exposure device (a process of exposing a substrate), and a process of forming a latent image pattern on the substrate by this process. Perform the development process. Furthermore, such a manufacturing method includes other well-known procedures (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, cutting, bonding, packaging, etc.). The manufacturing method of the article of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the conventional method.

<Other Examples> The present invention can also provide a program that realizes one or more functions of the above-mentioned embodiments to a system or device through a network or a storage medium, and read the program by one or more processors in the computer of the system or device And the processing performed is thus realized. In addition, it can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

Although the preferred embodiments of the present invention have been described above, the present invention is of course not limited to these embodiments, and various changes and modifications can be made within the scope of the gist of the present invention.

10: The first exposure device 11: Pattern forming part 12: Mark formation part 13: Mark measurement department 20: The second exposure device 21: Pattern forming part 23: Mark measurement department 30: Transport Department 40: Main Control Department 100: Formation system

[Fig. 1] is a schematic diagram showing the overall structure of the forming system. [Fig. 2] A diagram showing the configuration of the first exposure device. [Fig. 3] is a graph showing the index of pattern formation accuracy. [Fig. 4] is a drawing showing the pattern formation in the comparative example. [Fig. 5] is a diagram showing the order of formation of alignment marks in a comparative example. [Fig. 6] is a diagram showing the pattern formation of 4 alignment marks. [Fig. 7] is a diagram showing the positional deviation of the substrate that can be discriminated through 4 alignment marks. [Fig. 8] is a flowchart showing the pattern forming process. [Fig. 9] is a diagram showing a substrate on which 6 alignment marks are formed.

Claims (17)

An exposure device is an exposure device that scans and exposes a first pattern on a substrate, and scans and exposes the first pattern before exposure in a different exposure device that exposes the second pattern in an area different from the area where the first pattern is exposed By, It has: A mark forming part, which forms the alignment mark on the substrate; A measuring part which measures the position of the alignment mark formed through the aforementioned mark forming part; and An output unit that outputs position information of the alignment mark measured by the first measurement unit in order to be usable in another exposure device that exposes the second pattern; Wherein, after the mark forming portion forms a first mark group including at least two alignment marks on the first substrate position, the substrate is moved to include a straight line connecting the two alignment marks of the first mark group. The second substrate position in the direction of the vertical component forms a second mark group including at least two alignment marks, The scanning exposure of the first pattern is performed in a direction in which the substrate is moved from the position of the first substrate to the position of the second substrate. Such as the exposure device of claim 1, which further has a plurality of mark forming portions for forming alignment marks on the substrate, At least two alignment marks of the first mark group are simultaneously formed by the plurality of mark forming portions, and at least two alignment marks of the second mark group are simultaneously formed by the plurality of mark forming portions. The exposure apparatus according to claim 1, wherein the first pattern is exposed without using the position information of the alignment mark measured by the measuring section. The exposure apparatus according to claim 1, wherein the area connecting the alignment marks of the first mark group and the second mark group includes an area where the first pattern and the second pattern are exposed on the substrate. The exposure apparatus according to claim 1, wherein the exposure of the first pattern and the second pattern exposes the latent image pattern on the substrate. An exposure device that scans and exposes a second pattern in an area different from the area where the aforementioned first pattern is exposed after exposure in another exposure device that exposes a first pattern on a substrate, It has a measurement unit that aligns the position of the first mark group including at least two alignment marks formed on the substrate, and includes moving the substrate to include relative to the two alignments of the first mark group. Measure the position of the second mark group of at least two alignment marks formed in a state where the straight line connecting the mark is perpendicular to the direction of the component, Scan exposure based on the position information of the first mark group and the second mark group measured by the other exposure device, and the position information of the first mark group and the second mark group measured by the measurement unit The aforementioned second pattern. The exposure apparatus according to claim 6, wherein the second mark group is scanned and exposed in a direction moving from the substrate position when the first mark group is measured by the measurement unit to the substrate position when the second mark group is measured. pattern. The exposure apparatus of claim 6, which further has a substrate stage holding the aforementioned substrate, The deviation from the target position of the substrate through the movement of the substrate stage is corrected, and the second pattern is scanned and exposed on the substrate. The exposure apparatus according to claim 6, wherein the position shift from the target position in the rotation direction of the substrate when the substrate is placed on the substrate stage is determined based on the position shift from the target position of the substrate through the movement of the substrate stage As a result of the position shift, the second pattern is scanned and exposed on the substrate. The exposure device of claim 6, wherein the position of the first mark group and the second mark group measured by the other exposure device, and the first mark group and the second mark group measured by the measurement unit The difference between the positions of the two mark groups is scanned and exposed on the substrate with the second pattern. The exposure apparatus according to claim 6, wherein the area connecting the alignment marks of the first mark group and the second mark group includes an area where the first pattern and the second pattern are exposed on the substrate. The exposure apparatus according to claim 6, wherein the exposure of the first pattern and the second pattern exposes the latent image pattern on the substrate. A pattern forming device is a pattern forming device that forms a first pattern on a substrate, and forms the first pattern before pattern formation in another pattern forming device that forms a second pattern in a region different from the region where the first pattern is formed. 1 pattern person, It has: A mark forming part, which forms the alignment mark on the substrate; A measuring part which measures the position of the alignment mark formed through the aforementioned mark forming part; and An output unit for outputting position information of the alignment mark measured by the measurement unit in order to be usable in another pattern forming device that forms the second pattern; After the mark forming portion forms a first mark group including at least two alignment marks on the first substrate position, the substrate is moved to include a straight line connecting the two alignment marks of the first mark group to be perpendicular In the second substrate position in the direction of the component, a second mark group including at least two alignment marks is formed. A pattern forming device that forms a second pattern in a region different from the region where the first pattern is formed after the pattern is formed in another pattern forming device that forms a first pattern on a substrate, It has a measurement unit that aligns the position of the first mark group including at least two alignment marks formed on the substrate, and includes moving the substrate to include relative to the two alignments of the first mark group. Measure the position of the second mark group of at least two alignment marks formed in a state where the straight line connecting the mark is perpendicular to the direction of the component, Based on the position information of the first mark group and the second mark group measured by the other pattern forming device, and the position information of the first mark group and the second mark group measured by the measurement unit, it is formed The aforementioned second pattern. An exposure method comprising a first process of exposing a first pattern on a substrate with a first exposure device, and exposing a second pattern in an area different from the area where the first pattern on the substrate is exposed by a second exposure device The second procedure is to expose the pattern on the substrate, The aforementioned first procedure includes: A first mark forming process, which is to form at least two alignment marks on the aforementioned substrate at a position of the first substrate; A first measurement procedure, which measures the positions of at least two alignment marks formed by the aforementioned first mark formation procedure; A moving procedure, which is to move the substrate in a direction including a component perpendicular to a straight line connecting the two alignment marks formed by the first mark forming procedure; A second mark forming process, which is a process of forming at least two alignment marks on the substrate at the position of the substrate moved by the moving process; A second measurement procedure, which measures the positions of at least two alignment marks formed by the aforementioned second mark formation procedure; and A first exposure process, which is a process that scans one side in the direction in which the substrate is moved by the above-mentioned moving process, and exposes the first pattern on the substrate on the other side; The aforementioned second procedure includes: A third measurement program that measures the position of the alignment mark measured by the first measurement program and the second measurement program; and The second exposure procedure is to scan and expose the second pattern on the substrate based on the measurement results of the alignment marks in the first measurement procedure, the second measurement procedure, and the third measurement procedure. A method of manufacturing an article, which includes: A procedure for exposing a pattern on a substrate using the exposure method as in claim 15, and A procedure for processing the aforementioned substrate with a pattern exposed by the aforementioned procedure, Among them, an article is manufactured from the aforementioned substrate to be processed. A memory medium for performing a first program for exposing a first pattern on a substrate using a first exposure device, and exposing a region different from the area where the first pattern on the substrate is exposed by a second exposure device The program of the second program of the second pattern, It executes the first procedure and the second procedure, The aforementioned first procedure includes: A first mark forming process, which is to form at least two alignment marks on the aforementioned substrate at a position of the first substrate; A first measurement procedure, which measures the positions of at least two alignment marks formed by the aforementioned first mark formation procedure; A moving procedure, which is to move the substrate in a direction including a component perpendicular to a straight line connecting the two alignment marks formed by the first mark forming procedure; A second mark forming process, which is a process of forming at least two alignment marks on the substrate at the position of the substrate moved by the moving process; A second measurement procedure, which measures the positions of at least two alignment marks formed by the aforementioned second mark formation procedure; and A first exposure procedure, which is one side scanning in the direction in which the aforementioned substrate is moved by the aforementioned movement procedure, and one side exposing the aforementioned first pattern on the aforementioned substrate; The aforementioned second procedure includes: A third measurement program that measures the position of the alignment mark measured by the first measurement program and the second measurement program; and The second exposure procedure is to scan and expose the second pattern on the substrate based on the measurement results of the alignment marks in the first measurement procedure, the second measurement procedure, and the third measurement procedure.

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