TWI791940B - Forming method, forming device and manufacturing method of article - Google Patents
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- TWI791940B TWI791940B TW109101923A TW109101923A TWI791940B TW I791940 B TWI791940 B TW I791940B TW 109101923 A TW109101923 A TW 109101923A TW 109101923 A TW109101923 A TW 109101923A TW I791940 B TWI791940 B TW I791940B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/708—Mark formation
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Auxiliary Devices For And Details Of Packaging Control (AREA)
Abstract
一種形成方法,其為使用第1裝置與第2裝置在基板上的1個層形成圖案者,按基板進行包含以下程序的處理:標記形成程序,其為在前述第1裝置在基板上形成標記者;第1形成程序,其為在前述第1裝置在基板上形成第1圖案者;和第2形成程序,其為在前述第2裝置在基板上形成第2圖案者;前述處理的模式方面,包含進行在前述第1裝置就前述標記的位置進行計測的計測程序,並根據該計測程序的計測結果而控制前述第2圖案的形成的第1模式、和省略前述計測程序,而根據前次的計測程序的計測結果控制前述第2圖案的形成的第2模式。A forming method for forming a pattern on one layer of a substrate using a first device and a second device, wherein a process including the following procedure is performed for each substrate: a mark forming process, which is to form a mark on a substrate by the first device or; the first forming process, which is to form the first pattern on the substrate in the aforementioned first device; and the second forming process, which is to form the second pattern on the substrate in the aforementioned second device; the mode of the aforementioned processing , including performing a measurement program for measuring the position of the aforementioned mark in the aforementioned first device, and controlling the formation of the aforementioned second pattern based on the measurement result of the measurement program, and a first mode in which the aforementioned measurement program is omitted, and based on the previous The measurement result of the measurement program controls the second mode of formation of the aforementioned second pattern.
Description
本發明涉及在基板上的1個層形成圖案的形成方法、形成裝置、及物品之製造方法。The present invention relates to a method for forming a single-layer pattern on a substrate, a device for forming it, and a method for manufacturing an article.
近年來,尤其於液晶顯示裝置是基板尺寸大型化,現今需要不浪費地利用基板。為此,已提出稱為所謂的MMG(Multi Model on Glass)的技術,使用複數個裝置,以複數個裝置分擔進行往在基板上的1個層之複數個區域的圖案形成(專利文獻1參照)。In recent years, especially in liquid crystal display devices, the size of the substrate has increased, and it is now necessary to use the substrate without waste. For this reason, the technology called so-called MMG (Multi Model on Glass) has been proposed, using a plurality of devices, and performing pattern formation to a plurality of regions of one layer on the substrate with a plurality of devices (see Patent Document 1 ).
在MMG技術,透過複數個裝置形成於基板上的1個層的複數個圖案整體的尺寸與位置可被用作為圖案形成精度的評估指標。為了使如此的圖案形成精度提升,在專利文獻1,透過複數個裝置中的一者將對準標記形成於基板上,以該對準標記的位置為基準而以各裝置在基板上形成圖案。
[先前技術文獻]
[專利文獻]In MMG technology, the overall size and position of a plurality of patterns formed in one layer on a substrate by a plurality of devices can be used as an evaluation index of pattern formation accuracy. In order to improve such pattern forming accuracy, in
[專利文獻1]日本特開2005-092137號公報[Patent Document 1] Japanese Patent Laid-Open No. 2005-092137
[發明所欲解決之問題][Problem to be solved by the invention]
在MMG技術,雖由於往基板上的圖案形成以複數個裝置分擔效率佳地進行因而在處理量方面有利,惟需要進一步的處理量的提升。The MMG technology is advantageous in terms of throughput because the patterning on the substrate is efficiently shared by a plurality of devices, but further improvement in throughput is required.
所以,本發明目的在於提供為了使處理量提升時有利的技術。 [解決問題之技術手段]Therefore, an object of the present invention is to provide an advantageous technique for increasing the throughput. [Technical means to solve the problem]
為了達成上述目的,作為本發明的一態樣的形成方法為一種形成方法,其為使用第1裝置與第2裝置在基板上的1個層形成圖案者,按基板進行包含以下程序的處理:標記形成程序,其為在前述第1裝置在基板上形成標記者;第1形成程序,其為在前述第1裝置在基板上形成第1圖案者;和第2形成程序,其為在前述第2裝置在基板上形成第2圖案者;前述處理的模式方面,包含進行在前述第1裝置就前述標記的位置進行計測的計測程序並根據該計測程序的計測結果而控制前述第2圖案的形成的第1模式、和省略前述計測程序而根據前次的計測程序的計測結果控制前述第2圖案的形成的第2模式。In order to achieve the above-mentioned object, the formation method as an aspect of the present invention is a formation method that uses the first device and the second device to form a pattern on one layer on the substrate, and performs processing including the following procedures for each substrate: A mark forming process for forming a mark on a substrate by the first device; a first forming process for forming a first pattern on the substrate by the first device; and a second forming process for forming a mark on the substrate by the
本發明的進一步之目的或其他態樣將透過在以下參照圖式進行說明之優選實施方式從而加以明確化。 [對照先前技術之功效]Further objects and other aspects of the present invention will be clarified through preferred embodiments described below with reference to the drawings. [compared to the effect of prior art]
依本發明時,例如可提供為了使處理量提升時有利的技術。According to the present invention, for example, it is possible to provide an advantageous technique for increasing the throughput.
本發明的其他特徵及優點將透過參照圖式下的以下的說明而明朗化。另外,圖式中,對相同或同樣的構成,標注相同的參考符號。Other features and advantages of the present invention will be clarified through the following description with reference to the drawings. In addition, in the drawings, the same or similar configurations are denoted by the same reference signs.
以下,參照圖式詳細說明實施方式。另外,以下的實施方式非限定申請專利範圍的發明者。於實施方式雖記載複數個特徵,惟不限於此等複數個特徵的全部為發明必須者,此外複數個特徵亦可任意進行組合。再者,圖式中,對相同或同樣的構成標注相同的參考符號,重複之說明省略。Embodiments will be described in detail below with reference to the drawings. In addition, the following embodiments do not limit the inventors of the claims. Although plural features are described in the embodiments, all of these plural features are not limited to being essential to the invention, and plural features may be combined arbitrarily. In addition, in the drawing, the same reference numerals are assigned to the same or similar configurations, and overlapping explanations are omitted.
[系統構成]
就涉及本發明的形成系統100(形成裝置)進行說明。形成系統100為執行所謂的MMG(Multi Model on Glass)技術的系統,使用複數個光刻裝置,在基板上的1個層(相同層)之彼此不同的位置分別形成圖案。光刻裝置方面,舉例如就基板進行曝光而將遮罩的圖案轉印於基板的曝光裝置、使用模具在基板上形成壓印材的圖案的壓印裝置、使用帶電粒子束在基板上形成圖案的描繪裝置等。[System Components]
The forming system 100 (forming apparatus) related to the present invention will be described. The forming
此外,適用涉及本發明的MMG技術的「基板上的1個層」例如可為在尚未形成圖案的裸板上最初形成的層(所謂的第1層),惟不限於此,亦可為第2層以後。在本實施方式,使用具有複數個曝光裝置的形成系統100,就在基板上的一個抗蝕層(感光劑)形成圖案(潛在圖案)之例進行說明。於此,基板W方面,例如可適用玻璃板、半導體晶圓等,而在本實施方式,就使用玻璃板作為基板W之例進行說明。此外,在以下,有時僅將「基板上的1個層」稱為「基板上」。In addition, the "one layer on the substrate" to which the MMG technology related to the present invention is applied may be, for example, the first layer (so-called first layer) formed on a bare board that has not yet been patterned. After 2 floors. In this embodiment, an example in which a pattern (latent pattern) is formed on one resist layer (photosensitive agent) on a substrate using the forming
圖1為就形成系統100的整體構成進行繪示的示意圖。形成系統100可包含第1曝光裝置10(第1裝置)、第2曝光裝置20(第2裝置)、搬送部30、和主控制部40。搬送部30將基板W搬送至第1曝光裝置10及第2曝光裝置20。主控制部40例如以具有CPU、記憶體之電腦而構成,總體地控制形成系統100的整體,同時可控制在第1曝光裝置10與第2曝光裝置20之間的資料、資訊的轉送。FIG. 1 is a schematic diagram illustrating the overall structure of a forming
第1曝光裝置10例如可包含圖案形成部11(第1形成部)、標記形成部12、標記計測部13(第1計測部)、和控制部14。圖案形成部11將遮罩M的圖案轉印於基板上從而在基板上形成第1圖案P1。例如,圖案形成部11根據顯示應形成第1圖案P1的目標位置座標之第1資訊(例如設計資料),在基板上的第1區域形成第1圖案P1。標記形成部12根據顯示應形成對準標記的目標位置座標之資訊(例如設計資料),在基板上形成對準標記。標記計測部13就透過標記形成部12形成的對準標記的位置進行計測。控制部14例如由具有CPU、記憶體等的電腦構成,依裝置座標系而控制圖案形成部11、標記形成部12及標記計測部13(亦即,控制透過第1曝光裝置10所為之各處理)。在示於圖1之例,控制部14雖設為與主控制部40是不同形體,惟亦可設為主控制部40的構成要素。The
第2曝光裝置20例如可包含圖案形成部21(第2形成部)、標記計測部23(第2計測部)、和控制部24。在本實施方式的第2曝光裝置20,雖未設置標記形成部,惟亦可設置標記形成部。圖案形成部21將遮罩M的圖案轉印於基板上從而在基板上形成第2圖案P2。例如,圖案形成部21根據顯示應形成第2圖案P2的目標位置座標之第2資訊(例如設計資料),在與形成第1圖案P1的第1區域不同的基板上的第2區域形成第2圖案P2。標記計測部23就透過第1曝光裝置10的標記形成部12形成的對準標記的位置進行計測。控制部24例如由具有CPU、記憶體等的電腦構成,依裝置座標系而控制圖案形成部21及標記計測部23(亦即,控制透過第2曝光裝置20所為的各處理)。在示於圖1之例,控制部24雖設為與主控制部40是不同形體,惟亦可設為主控制部40的構成要素。The
接著,就第1曝光裝置10的具體的構成例進行說明。圖2為就第1曝光裝置10的構成例進行繪示的圖。於此,第2曝光裝置20比起第1曝光裝置10,雖在未設置標記形成部12方面不同,惟其他構成可為相同。亦即,第2曝光裝置20的圖案形成部21及標記計測部23可構成為分別與第1曝光裝置10的圖案形成部11及標記計測部13相同。Next, a specific configuration example of the
第1曝光裝置10作為圖案形成部11可包含照明光學系統11b、遮罩台11c、投影光學系統11d、和基板載台11e。照明光學系統11b使用來自光源11a的光而就遮罩M進行照明。遮罩台11c被構成為可保持遮罩M而移動。投影光學系統11d將形成於遮罩M的圖案投影於基板W。基板載台11e被構成為可保持基板W而移動。在如此般構成的第1曝光裝置10,遮罩M與基板W隔著投影光學系統11d分別被配置於光學上共軛的位置(投影光學系統11d的物面及像面),透過投影光學系統11d在基板上投影遮罩M的圖案。藉此,可在基板上的抗蝕層形成潛在圖案。The
此外,在示於圖2的第1曝光裝置10,設置上述的標記形成部12(12a、12b)與標記計測部13(13a、13b)。標記形成部12將帶電粒子束等的能量照射於基板上從而在基板上形成對準標記。在以下,有時將透過標記形成部12形成於基板上的對準標記稱為「標記AM」。標記計測部13就透過標記形成部12形成於基板上的標記AM進行檢測從而就標記AM的位置進行計測。例如,標記計測部13包含具有影像感測器與光學元件的範圍顯示器(離軸檢測器),可根據基板W的位置(XY方向)與在該範圍顯示器的視野內的標記AM的位置而就標記AM的位置進行計測。於此,在示於圖2之例,雖設置標記形成部12與標記計測部13各2個,惟不限於2個,亦可為3個以上,亦可為1個。Moreover, in the
[關於圖案形成精度]
接著,就透過形成系統100(第1曝光裝置10、第2曝光裝置20)之往基板上的第1圖案P1、第2圖案P2、及標記AM的形成進行說明。圖3為就透過形成系統100形成於基板上的第1圖案P1、第2圖案P2及標記AM的配置例進行繪示的圖。[About pattern forming precision]
Next, the formation of the first pattern P1, the second pattern P2, and the mark AM on the substrate through the formation system 100 (the
第1圖案P1可透過第1曝光裝置10的圖案形成部11,形成於基板上的第1區域。第2圖案P2可透過第2曝光裝置20的圖案形成部21,形成於與形成第1圖案P1的第1區域不同的基板上的第2區域。在示於圖3之例,第1圖案P1及第2圖案P2雖被以相同的尺寸(size)形成於基板上各1個,惟不限於此,亦可為彼此不同的尺寸、方向、個數。The first pattern P1 can pass through the
此外,標記AM可透過第1曝光裝置10的標記形成部12形成於在與形成第1圖案P1及第2圖案P2的區域(第1區域、第2區域)不同的區域之複數處。在示於圖3之例,以3個標記AM1~AM3未被配置於相同直線上的方式,形成於基板W的角部附近。如此般將3個標記AM1~AM3形成於基板上時,可根據3個標記AM1~AM3的位置的計測結果,求出X方向偏移、Y方向偏移、旋轉、X方向倍率、Y方向倍率。In addition, the mark AM can be formed in a plurality of areas different from the area (first area, second area) where the first pattern P1 and the second pattern P2 are formed through the
於此,透過形成系統100(MMG技術)之圖案的形成精度可根據形成於基板上的圖案整體的尺寸與位置進行評價。形成於基板上的圖案整體的尺寸例如可由表示在形成於基板上的圖案整體之對角線的長度的第1指標TP(Total Pitch)而界定。在示於圖3之例,將透過第1曝光裝置10形成於基板上的第1圖案P1的右下的端點EP1、和透過第2曝光裝置20形成於基板上的第2圖案P2的左上的端點EP2連結的直線的長度被界定為第1指標TP。另一方面,形成於基板上的圖案整體的位置例如可由表示在形成於基板上的圖案整體之中心點的位置的第2指標CS(Center Shift)界定。在示於圖3之例,將端點EP1與端點EP2連結的直線之中心點被界定為第2指標CS。Here, the pattern forming accuracy of the forming system 100 (MMG technology) can be evaluated based on the overall size and position of the pattern formed on the substrate. The size of the entire pattern formed on the substrate can be defined, for example, by a first index TP (Total Pitch) indicating the length of the diagonal line of the entire pattern formed on the substrate. In the example shown in FIG. 3 , the end point EP1 of the lower right of the first pattern P1 formed on the substrate through the
[歷來的圖案形成方法]
接著,就使用了採用MMG技術的上述的形成系統100的圖案形成處理,一面參照圖4~圖6一面進行說明。於此,使用圖4~圖6D在以下說明的圖案形成處理為可成為本發明的前提之技術。[Conventional pattern forming method]
Next, pattern forming processing using the above-described forming
圖4為就使用了MMG技術的圖案形成處理進行繪示的流程圖。示於圖4的流程圖的各程序可被基於透過主控制部40之控制而執行。圖5為就在形成系統100之處理流程(數據流)進行繪示的圖。此外,圖6A~6D為就以圖案形成處理在基板上形成圖案的樣子隨時間推移進行繪示的圖。在圖6A~6D,示出基板W與標記計測部13a、13b的位置關係、及透過第1曝光裝置10與第2曝光裝置10形成於基板上的圖案。在以下,就於基板上的Shot1~Shot3中的各者透過第1曝光裝置10形成第1圖案、於基板上的Shot4透過第2曝光裝置20形成第2圖案之例進行說明。FIG. 4 is a flowchart illustrating a pattern forming process using the MMG technique. Each program shown in the flowchart of FIG. 4 can be executed based on the control by the
在S101,透過搬送部30將基板W搬送至第1曝光裝置10(圖5的處理(1))。在S102,根據顯示應形成標記AM的目標位置之資訊(例如設計資料),透過第1曝光裝置10的標記形成部12a、12b在基板上形成複數個標記AM(圖5的處理(2))。透過標記形成部12a、12b之標記AM的形成可被基於第1曝光裝置10的座標系而控制。藉此,如示於圖6A,可在基板W的角部附近形成3個標記AM1~AM3。In S101, the board|substrate W is conveyed to the
在S103,根據第1曝光裝置10的座標系,透過第1曝光裝置10的標記計測部13a、13b,就在S102的程序形成於基板上的複數個標記AM的位置進行計測(圖5的處理(3))。例如,如示於圖6B,一面使標記計測部13a、13b與基板W相對移動於XY方向,一面透過標記計測部13a、13b就基板上的複數個標記AM的位置進行計測。如此般透過標記計測部13就複數個標記AM的位置進行計測,使得可從複數個標記AM的位置關係,求出在第1曝光裝置10內之基板W的X方向偏移、Y方向偏移、旋轉(θ方向)、X方向倍率及Y方向倍率。此外,在S103計測的複數個標記AM的位置資訊被對第2曝光裝置20通知(圖5的處理(4))。複數個標記AM的位置資訊如後述般可用於算出一校正值,該校正值為就因裝置內的溫度(例如投影光學系統的溫度)等在第1曝光裝置10與第2曝光裝置20的裝置內環境的差所致的基板W的倍率差進行校正者。In S103, based on the coordinate system of the
在S104,根據顯示應形成第1圖案P1的目標尺寸及目標位置的第1資訊(例如設計資料),透過第1曝光裝置10的圖案形成部11在基板上形成第1圖案P1(圖5的處理(5))。目標位置例如指相對於標記AM之目標相對位置。此外,透過圖案形成部11之第1圖案P1的形成可被基於第1曝光裝置10的座標系而進行。例如,在S104的程序,根據在S103的程序計測的複數個標記AM的位置資訊,以第1圖案P1被形成於第1資訊所示的目標位置的方式,透過基板載台11e進行基板W的定位(XY方向)。並且,如示於圖6C,依示於第1資訊的目標尺寸,在基板上的Shot1~Shot3中的各者形成第1圖案P1。In S104, according to the first information (such as design data) showing the target size and target position where the first pattern P1 should be formed, the first pattern P1 is formed on the substrate through the
在S105,透過搬送部30將基板W從第1曝光裝置10搬送至第2曝光裝置(圖5的處理(6)~(7))。在S105的程序,例如為了使第2曝光裝置形成於基板上的第2圖案的方向與以第1曝光裝置10形成於基板上的第1圖案的方向不同之方式,將基板W搬送至第2曝光裝置20。具體而言,透過搬送部30,將從第1曝光裝置10搬出的基板W旋轉90度而搬送至第2曝光裝置20。In S105, the board|substrate W is conveyed from the
在S106,根據第2曝光裝置20的座標系,透過第2曝光裝置20的標記計測部23,就在S102的程序形成於基板上的複數個標記AM的位置進行計測(圖5的處理(8))。例如,如示於圖6D,一面使標記計測部23與基板W在XY方向上相對移動,一面透過標記計測部23就基板上的複數個標記AM的位置進行計測。如此般透過標記計測部23就複數個標記AM的位置進行計測,使得可從複數個標記AM的位置關係,求出在第2曝光裝置20內之基板W的X方向偏移、Y方向偏移、旋轉(θ方向)、X方向倍率及Y方向倍率。In S106, based on the coordinate system of the
在S107,求出在第1曝光裝置10與第2曝光裝置20的基板W的倍率差,決定為了校正該倍率差用的校正值(圖5的處理(9))。例如,主控制部40根據在S103計測的複數個標記AM的位置關係求出在第1曝光裝置10的基板W的倍率,根據在S106計測的複數個標記AM的位置關係求出在第2曝光裝置20的基板W的倍率。藉此,可求出在裝置間的基板W的倍率差,決定為了校正該倍率差用的校正值。In S107, the difference in magnification of the substrate W between the
在S108,根據顯示應形成第2圖案P2的目標尺寸及目標位置的第2資訊(例如設計資料),透過第2曝光裝置20的圖案形成部21在基板上形成第2圖案P2(圖5的處理(10))。目標位置例如指相對於標記AM之目標相對位置。此外,透過圖案形成部21之第2圖案P2的形成可被基於第2曝光裝置20的座標系而進行。例如,在S108的程序,根據在S106的程序計測的複數個標記AM的位置資訊,以第2圖案P2被形成於第2資訊所示的目標位置的方式,透過基板載台進行基板W的定位(XY方向)。並且,根據在S107決定的校正值,校正第2資訊所示的目標尺寸,依校正的目標尺寸,在基板上的Shot4形成第2圖案P2。In S108, according to the second information (such as design data) showing the target size and target position where the second pattern P2 should be formed, the second pattern P2 is formed on the substrate through the
在S109,透過搬送部30從第2曝光裝置10搬出基板W。在S110,判定是否存在接下來要進行圖案形成處理的基板W(下個基板W)。存在下個基板W的情況下返回S101,無下個基板W的情況下結束。In S109 , the substrate W is carried out from the
在上述的圖案形成處理,透過第1曝光裝置10在基板上形成複數個標記AM,以第1曝光裝置10及第2曝光裝置20中的各者就該複數個標記AM的位置進行計測。並且,從該計測結果,決定為了校正在第1曝光裝置10與第2曝光裝置20的基板W的倍率差用的校正值,依透過該校正值而校正的目標尺寸在基板上形成圖案。藉此,在第1曝光裝置10與第2曝光裝置20發生裝置內環境的差的情況下,仍可使第1指標TP及第2指標CP落入期望的精度範圍,使圖案的形成精度提升。另一方面,在使用了MMG技術之形成系統100,雖以複數個裝置分擔效率佳地進行往基板上的圖案形成,故在處理量方面有利,惟包含將標記AM形成於基板上的程序的部分處理量會降低。因此,在形成系統100,需要進一步的處理量的提升。In the pattern forming process described above, the
所以,涉及本發明的形成系統100連續進行往複數個基板W的圖案形成處理而在透過標記形成部12形成於基板上的複數個標記AM的位置已穩定的情況下,省略在第1曝光裝置10的該複數個標記AM的位置的計測。藉此,可使處理量提升。Therefore, the forming
具體而言,按基板進行的圖案形成處理的模式方面,可包含第1模式與第2模式。第1模式為如下的模式:進行在第1曝光裝置10就複數個標記AM的位置進行計測的計測程序,根據在該計測程序的計測結果而控制在第2曝光裝置20的第2圖案P2的形成。另一方面,第2模式為如下的模式:省略在第1曝光裝置10的計測程序,根據前次的計測程序的計測結果,控制在第2曝光裝置20的第2圖案P2的形成。在第1模式的過去複數次的圖案形成處理中的計測程序的計測結果的變動落入容許範圍的情況下,使圖案形成處理的模式從第1模式轉移至第2模式。Specifically, the mode of the pattern forming process for each substrate can include a first mode and a second mode. The first mode is a mode in which the position of the plurality of marks AM is measured in the
例如,在曝光裝置,對複數個基板W連續進行曝光時,隨之致使裝置內的溫度(例如投影光學系統的溫度)上升,同時搬送至該裝置內的基板W的溫度亦上升而引起熱脹。一般情況下,裝置內的溫度上升至既定的溫度時飽和而穩定,故隨之基板W的熱脹飽和而穩定,透過標記形成部12形成於基板上的複數個標記AM的位置亦會穩定。亦即,基板W的熱脹飽和後可對複數個基板W在大致上相同的基板上的位置形成複數個標記AM。為此,可將在往一個基板W的圖案形成處理時進行計測的複數個標記AM的位置資訊,利用於往後續的基板W的圖案形成處理時。For example, in an exposure apparatus, when a plurality of substrates W are continuously exposed, the temperature inside the apparatus (for example, the temperature of the projection optical system) rises accordingly, and the temperature of the substrate W transported into the apparatus also rises, causing thermal expansion. . Generally, when the temperature in the device rises to a predetermined temperature, it becomes saturated and stable. Therefore, the thermal expansion of the substrate W becomes saturated and stable, and the positions of the plurality of marks AM formed on the substrate through the
<第1實施方式>
就使用了採用MMG技術的上述的形成系統100的第1實施方式的圖案形成處理,一面參照圖7~圖8一面進行說明。圖7為就使用了MMG技術的圖案形成處理進行繪示的流程圖。示於圖7的流程圖的各程序可被基於透過主控制部40之控制而執行。圖8為就在形成系統100之處理流程(數據流)進行繪示的圖。<First Embodiment>
The pattern forming process of the first embodiment using the above-described forming
在S201,透過搬送部30將基板W搬送至第1曝光裝置10(圖8的處理(1))。在S202,透過第1曝光裝置10的標記形成部12在基板上形成複數個標記AM(圖8的處理(2))。S201~S202的程序與示於圖4的流程圖的S101~S102的程序相同,故此處省略詳細的說明。In S201, the board|substrate W is conveyed to the
在S203,判斷透過標記形成部12形成於基板上的複數個標記AM的位置是否穩定(亦即,形成於基板上的標記AM的位置的穩定性)。該判斷例如可由主控制部40進行。判斷為形成於基板上的複數個標記AM的位置未穩定的情況下進至S204,執行在就複數個標記AM的位置進行計測的第1模式下的圖案形成處理。另一方面,判斷為複數個標記AM的位置已穩定的情況下進至S205,執行省略複數個標記AM的位置的計測的第2模式下的圖案形成處理。In S203 , it is determined whether the positions of the plurality of marks AM formed on the substrate by the
於此,就判斷標記AM的位置的穩定性的一例進行說明。例如,主控制部40就過去進行標記AM的計測程序的複數個基板W中的各者,取得標記AM的位置的計測結果。並且,在過去複數次的計測程序的計測結果的變動落入容許範圍的情況下,判斷為透過標記形成部12形成於基板上的複數個標記的位置已穩定。Here, an example of determining the stability of the position of the mark AM will be described. For example, the
將具體的標記AM的位置的計測結果(dx、dy、dθ)、和計測結果的變動的容許範圍(tx、ty、tθ)示於以下。在以下之例,作為標記AM的位置的過去的計測結果,示出在最後進行圖案形成處理的基板W(最後的基板W)方面的計測結果、和比其之前進行圖案形成處理的基板W方面的計測結果。此外,計測結果方面,採用透過標記計測部13計測出的標記AM的位置與應形成標記AM的目標位置(基準)的偏移量。再者,在與最後的基板W方面的計測結果的比較中使用的計測結果的個數(亦即,比最後的基板W之前進行圖案形成處理的基板W的個數)設定為3個。因此,在以下之例,示出比最後的基板W還1個~3個前的基板W方面的計測結果。以下之例的情況下,最後的基板W方面的計測結果與比其1個~3個前的基板W方面的計測結果的差全部落入容許範圍內,故可判斷為透過標記形成部12形成於基板上的複數個標記的位置已穩定。The specific measurement results (dx, dy, dθ) of the position of the marker AM and the tolerance range (tx, ty, tθ) of the fluctuation of the measurement results are shown below. In the following example, as the past measurement results of the position of the mark AM, the measurement results of the substrate W subjected to the pattern forming process last (the last substrate W) and the substrate W subjected to the pattern forming process before it are shown. measurement results. In addition, as a measurement result, the amount of deviation between the position of the mark AM measured by the
・計測結果的變動的容許範圍 X方向的容許範圍tx:2μm Y方向的容許範圍ty:2μm θ方向的容許範圍tθ:2度 作為比較對象之過去的基板的個數:3個 ・最後的基板方面的計測結果 X方向的偏移量dx:1μm Y方向的偏移量dy:1μm θ方向的偏移量dθ:1度 ・1個前的基板方面的計測結果 X方向的偏移量dx:1μm Y方向的偏移量dy:1μm θ方向的偏移量dθ:1度 ・2個前的基板方面的計測結果 X方向的偏移量dx:1.5μm Y方向的偏移量dy:1.5μm θ方向的偏移量dθ:1.5度 ・3個前的基板方面的計測結果 X方向的偏移量dx:2μm Y方向的偏移量dy:2μm θ方向的偏移量dθ:2度・Allowable range of fluctuations in measurement results Allowable range tx in X direction: 2μm Allowable range in Y direction ty: 2μm Allowable range tθ in θ direction: 2 degrees Number of conventional substrates to be compared: 3 ・Measurement results of the final substrate Offset dx in X direction: 1μm Offset dy in Y direction: 1μm Offset dθ in θ direction: 1 degree ・Measurement results on the substrate side one month ago Offset dx in X direction: 1μm Offset dy in Y direction: 1μm Offset dθ in θ direction: 1 degree ・Measurement results for two boards ago Offset dx in X direction: 1.5μm Offset dy in Y direction: 1.5μm Offset dθ in θ direction: 1.5 degrees ・Measurement results for boards three years ago Offset dx in X direction: 2μm Offset dy in Y direction: 2μm Offset dθ in θ direction: 2 degrees
在上述之例中,雖進行最後的基板W方面的計測結果與比其之前的基板W方面的計測結果的比較,惟不限於此。例如,亦可在包含最後的基板W的過去的複數個基板W方面的計測結果的平均落入容許範圍的情況下,判斷為複數個標記的位置已穩定。此外,亦可不斷累積在第1曝光裝置10的複數個標記AM的計測結果、裝置內環境的狀態、標記計測時的裝置設定等,根據就計測結果的傾向進行分析的結果,判斷為複數個標記的位置已穩定。計測結果的傾向的分析手段方面,例如可使用過去的基板W方面的計測結果的近似資料,或使用累積複數個曝光裝置的計測結果、裝置內環境的資料而透過機器學習進行分析的結果。再者,對既定的個數的基板進行計測結果時,亦可比較最近的數個份的基板W的計測結果彼此,在該差落入容許範圍的情況下,判斷為複數個標記的位置已穩定。In the above-mentioned example, although the measurement result of the last substrate W was compared with the measurement result of the substrate W before it, the present invention is not limited thereto. For example, when the average of the measurement results of the past plurality of substrates W including the last substrate W falls within the allowable range, it may be determined that the positions of the plurality of marks have stabilized. In addition, the measurement results of the plurality of marks AM in the
其他穩定性判斷的方法方面,亦可採用根據設於第1曝光裝置10的複數個標記形成部12a、12b的物理上的相對位置進行穩定性判斷的方法。本實施方式的情況下,複數個標記形成部12a、12b安裝於投影光學系統11d,因投影光學系統11d的溫度變動使得投影光學系統11d的形狀發生變化,隨此複數個標記形成部12a、12b的相對位置發生變化。為此,亦可設置就複數個標記形成部12a、12b的相對位置進行計測的計測機構,根據該計測機構的計測結果,在該相對位置的變動落入容許範圍的情況下,判斷為複數個標記的位置已穩定。此外,亦可設置就投影光學系統11d的熱變形量進行計測的計測機構,根據該計測結果,判斷為複數個標記的位置已穩定。As another method of stability judgment, a method of performing stability judgment based on the physical relative positions of the plurality of
S204為在第1模式的圖案形成處理進行的程序,為與示於圖4的流程圖的S103同樣的程序。在S204,透過第1曝光裝置10的標記計測部13,就在S202的程序形成於基板上的複數個標記AM的位置進行計測(圖8的處理(3-2)),將計測出的複數個標記AM的位置資訊向第2曝光裝置20通知(圖8的處理(4))。S204 is a procedure performed in the pattern forming process in the first mode, and is the same procedure as S103 shown in the flowchart of FIG. 4 . In S204, the positions of the plurality of marks AM formed on the substrate in the procedure of S202 are measured by the
S205為在第2模式的圖案形成處理進行的處理。在S205,透過標記計測部13之標記AM的位置的計測被省略(圖8的處理(3-1)),將在前次的計測程序獲得的計測結果(複數個標記AM的位置資訊)向第2曝光裝置20通知(圖8的處理(4))。S205 is processing performed in the pattern forming processing in the second mode. In S205, the measurement of the position of the mark AM by the
S206~S208為與示於圖4的流程圖的S104~S106同樣的程序,故該程序的說明省略。另外,S206~S208的程序對應於圖8的處理(5)~(8)。S206 to S208 are the same procedures as S104 to S106 shown in the flowchart of FIG. 4 , and therefore description of the procedures will be omitted. In addition, the procedure of S206-S208 corresponds to process (5)-(8) of FIG. 8.
在S209,求出在第1曝光裝置10與第2曝光裝置20的基板W的倍率差,決定為了校正該倍率差用的校正值(圖8的處理(9))。例如,主控制部40根據在S204或S205從第1曝光裝置10通知的複數個標記AM的位置資訊求出在第1曝光裝置10的基板W的倍率。此外,根據在S208計測出的複數個標記AM的位置資訊求出在第2曝光裝置20的基板W的倍率。藉此,可求出在裝置間的基板W的倍率差,決定為了校正該倍率差用的校正值。In S209, the difference in magnification of the substrate W between the
S210為與示於圖4的流程圖的S108同樣的程序,對應於圖8的處理(10)。在S210,根據在S209決定的校正值,校正第2資訊所示的目標尺寸,依校正的目標尺寸,在基板上形成第2圖案P2。在S211,透過搬送部30從第2曝光裝置10搬出基板W。在S212,判定是否存在接下來要進行圖案形成處理的基板W(下個基板W)。存在下個基板W的情況下返回S201,無下個基板W的情況下結束。於此,於S203,判斷為透過標記形成部12形成於基板上的複數個標記的位置已穩定的情況下,於下個基板W亦選擇第2模式。S210 is the same procedure as S108 shown in the flowchart of FIG. 4 and corresponds to the process (10) of FIG. 8 . In S210, according to the correction value determined in S209, the target size indicated by the second information is corrected, and the second pattern P2 is formed on the substrate according to the corrected target size. In S211 , the substrate W is carried out from the
如上述,在本實施方式,判斷透過標記形成部12形成於基板上的複數個標記AM的位置是否穩定,判斷為複數個標記AM的位置已穩定的情況下,省略透過標記計測部13之標記AM的計測。藉此,可削減透過標記計測部13之標記AM的計測所需的時間,可使處理量提升。As described above, in the present embodiment, it is judged whether the positions of the plurality of marks AM formed on the substrate through the
<第2實施方式>
就使用了採用MMG技術的上述的形成系統100的第2實施方式的圖案形成處理,一面參照圖9A~圖10一面進行說明。在第2實施方式,於第2模式,按事前設定的複數個基板中的各者在第1曝光裝置10(標記計測部13)進行標記AM的計測程序。並且,在第2模式進行的計測程序的計測結果的變動未落入容許範圍的情況下,使圖案形成處理的模式從第2模式轉移至第1模式。<Second Embodiment>
The pattern forming process of the second embodiment using the above-described forming
圖9A~9B為就使用了MMG技術的圖案形成處理進行繪示的流程圖。示於圖9A~9B的流程圖的各程序可被基於透過主控制部40之控制而執行。圖10為就在形成系統100之處理流程(數據流)進行繪示的圖。於此,相對於示於圖7的流程圖,示於圖9A~9B的流程圖是S201~S212為同樣的程序,新追加S213~S217。S213~S217為判斷是否從第2模式往第1模式轉移的程序,對應於圖10的處理(4)。在以下,就與示於圖7的流程圖不同點進行說明。9A-9B are flowcharts illustrating a pattern forming process using the MMG technique. Each program shown in the flowcharts of FIGS. 9A to 9B can be executed based on the control by the
於S203,判斷為形成於基板上的複數個標記AM的位置未穩定的情況下進至S204,執行第1模式下的圖案形成處理。另一方面,判斷為複數個標記AM的位置已穩定的情況下進至S213,執行第2模式下的圖案形成處理。When it is determined in S203 that the positions of the plurality of marks AM formed on the substrate are not stable, the process proceeds to S204, and the pattern forming process in the first mode is executed. On the other hand, when it is determined that the positions of the plurality of marks AM are stabilized, the process proceeds to S213, and the pattern forming process in the second mode is executed.
在S213,判斷是否為進行透過標記計測部13之標記AM的位置的計測(計測程序)的基板W。如上述,在第2模式,按事前設定的複數個基板中的各者進行在標記計測部13的標記AM的計測程序。非進行計測程序的基板W的情況下進至S205,為進行計測程序的基板W的情況下進至S214。In S213, it is determined whether or not it is the substrate W on which the measurement of the position of the mark AM passing through the mark measurement unit 13 (measurement program) is performed. As mentioned above, in the 2nd mode, the measurement process of the mark AM in the
在S214,透過第1曝光裝置10的標記計測部13,就在S202的程序形成於基板上的複數個標記AM的位置進行計測,將計測出的複數個標記AM的位置資訊向第2曝光裝置20通知。在S215,判斷在第2模式進行的計測程序的計測結果的變動是否落入容許範圍。具體而言,判斷在第2模式今次進行的計測程序的計測結果與前次進行的計測程序的計測結果的差是否落入容許範圍。計測結果的變動落入容許範圍的情況下進至S216,決定在第2模式進行對於下個基板W之圖案形成處理後,進至S206。另一方面,計測結果的變動未落入容許範圍的情況下進至S217,決定以第1模式進行對於下個基板W之圖案形成處理後,進至S206。In S214, the position of the plurality of marks AM formed on the substrate in the procedure of S202 is measured by the
於此,在上述之例中,雖根據在第2模式進行的計測程序的計測結果的變動而判斷是否往第1模式轉移,惟不限於此。例如,亦可設置就基板的溫度或裝置內的溫度進行計測的機構,在基板的溫度變動或裝置內的溫度變動未落入容許範圍的情況下從第2模式往第1模式轉移。此外,亦可設置就投影光學系統11d的聚焦特性進行計測的機構,在聚焦特性的變動未落入容許範圍的情況下從第2模式往第1模式轉移。再者,亦可在複數個標記形成部12a、12b的相對位置的變動未落入容許範圍的情況下從第2模式轉移至第1模式。Here, in the above example, whether or not to shift to the first mode is determined based on a change in the measurement result of the measurement program performed in the second mode, but the present invention is not limited thereto. For example, a mechanism for measuring the temperature of the substrate or the temperature in the device may be provided, and the second mode may be switched to the first mode when the temperature fluctuation of the substrate or the temperature fluctuation in the device is not within the allowable range. In addition, a mechanism for measuring the focus characteristic of the projection
如上述,在本實施方式,判斷在第2模式進行的計測程序的計測結果的變動是否落入容許範圍。並且,在計測結果的變動落入容許範圍的情況下使第2模式繼續,在計測結果的變動未落入容許範圍的情況下予以轉移至第1模式。藉此,於轉移至第2模式後,亦可在透過標記形成部12形成於基板上的複數個標記AM的位置變不穩定的情況下轉移至第1模式,使往基板上的圖案形成精度提升。As described above, in the present embodiment, it is judged whether or not the variation in the measurement result of the measurement program performed in the second mode falls within the allowable range. Then, the second mode is continued when the fluctuation of the measurement result falls within the allowable range, and shifts to the first mode when the fluctuation of the measurement result does not fall within the allowable range. Thereby, after shifting to the second mode, it is also possible to shift to the first mode when the positions of the plurality of marks AM formed on the substrate by the
<物品之製造方法的實施方式> 本發明之實施方式相關的物品之製造方法適於製造例如半導體裝置等之微型裝置、具有微細構造的元件等之物品。本實施方式的物品之製造方法包含以下程序:在塗佈於基板的感光劑利用上述的曝光裝置形成潛像圖案(將基板進行曝光);和將以該程序形成潛像圖案的基板進行顯影(加工)。再者,如此之製造方法包含其他周知的程序(氧化、成膜、蒸鍍、摻雜、平坦化、蝕刻、抗蝕層剝離、切割、接合、封裝等)。本實施方式的物品之製造方法比起歷來的方法,在物品的性能、品質、生產性、生產成本中的至少一者方面有利。<Embodiments of the manufacturing method of the article> The method of manufacturing an article according to the embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The manufacturing method of the article of the present embodiment includes the following steps: forming a latent image pattern on the photosensitive agent coated on the substrate using the above-mentioned exposure device (exposing the substrate); and developing the substrate on which the latent image pattern is formed by this procedure ( processing). Furthermore, such manufacturing methods include other well-known procedures (oxidation, film formation, evaporation, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method of manufacturing an article according to this embodiment is advantageous in at least one of article performance, quality, productivity, and production cost compared to conventional methods.
<其他實施例> 本發明亦可將實現上述的實施方式的1個以上的功能的程式透過網路或記憶媒體而提供至系統或裝置,以該系統或裝置的電腦中的1個以上的處理器將程式讀出並執行的處理從而實現。此外,亦可透過實現1個以上的功能的電路(例如,ASIC)而實現。<Other Examples> In the present invention, a program for realizing one or more functions of the above-mentioned embodiments may be provided to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device may be used to read the program And the processing performed is thus achieved. In addition, it can also be realized by a circuit (for example, ASIC) that realizes one or more functions.
發明不限於上述實施方式,在不從發明的精神及範圍脫離之下,可進行各種的變更及變形。因此,撰寫申請專利範圍以公開發明的範圍。The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the scope of the patent application is drafted to disclose the scope of the invention.
10:第1曝光裝置 11:圖案形成部 12:標記形成部 13:標記計測部 20:第2曝光裝置 21:圖案形成部 23:標記計測部 30:搬送部 40:主控制部 100:形成系統10: The first exposure device 11: Pattern forming department 12:Mark forming part 13: Mark measurement department 20: The second exposure device 21: Pattern forming department 23: Mark measurement department 30:Transportation Department 40: Main Control Department 100:Formation System
圖式含於說明書中,構成其一部分,示出本發明的實施方式,與其記述一起用於說明本發明的原理。 [圖1]就形成系統的整體構成進行繪示的示意圖。 [圖2]就第1曝光裝置的構成例進行繪示的圖。 [圖3]就形成於基板上的第1圖案P1、第2圖案P2、及標記AM的配置例進行繪示的圖。 [圖4]就圖案形成處理進行繪示的流程圖。 [圖5]就在形成系統之處理流程進行繪示的圖。 [圖6A]就將圖案形成於基板上的樣子隨時間推移進行繪示的圖。 [圖6B]就將圖案形成於基板上的樣子隨時間推移進行繪示的圖。 [圖6C]就將圖案形成於基板上的樣子隨時間推移進行繪示的圖。 [圖6D]就將圖案形成於基板上的樣子隨時間推移進行繪示的圖。 [圖7]就第1實施方式的圖案形成處理進行繪示的流程圖。 [圖8]就在第1實施方式的形成系統之處理流程進行繪示的圖。 [圖9A]就第2實施方式的圖案形成處理進行繪示的流程圖。 [圖9B]就第2實施方式的圖案形成處理進行繪示的流程圖。 [圖10]就在第2實施方式的形成系統之處理流程進行繪示的圖。The drawings are included in the specification and constitute a part thereof, illustrate embodiments of the present invention, and serve to explain the principle of the present invention together with the description. [Fig. 1] A schematic diagram showing the overall configuration of the formation system. [ Fig. 2 ] A diagram showing a configuration example of a first exposure device. [ Fig. 3 ] A diagram showing an arrangement example of the first pattern P1, the second pattern P2, and the marks AM formed on the substrate. [ Fig. 4 ] A flow chart showing pattern forming processing. [ Fig. 5 ] A diagram showing the processing flow of the forming system. [FIG. 6A] A graph showing how a pattern is formed on a substrate over time. [FIG. 6B] A graph showing how a pattern is formed on a substrate over time. [FIG. 6C] A graph showing how a pattern is formed on a substrate over time. [FIG. 6D] A graph showing how a pattern is formed on a substrate over time. [ Fig. 7] Fig. 7 is a flowchart showing pattern forming processing in the first embodiment. [ Fig. 8] Fig. 8 is a diagram showing a processing flow of the forming system in the first embodiment. [FIG. 9A] A flowchart showing pattern forming processing in the second embodiment. [ Fig. 9B ] A flowchart showing pattern forming processing in the second embodiment. [ Fig. 10 ] A diagram showing a processing flow of the forming system in the second embodiment.
10:第1曝光裝置 10: The first exposure device
11:圖案形成部 11: Pattern forming department
12:標記形成部 12:Mark forming part
13:標記計測部 13: Mark measurement department
14:控制部 14: Control Department
20:第2曝光裝置 20: The second exposure device
21:圖案形成部 21: Pattern forming department
23:標記計測部 23: Mark measurement department
24:控制部 24: Control Department
30:搬送部 30:Transportation Department
40:主控制部 40: Main Control Department
100:形成系統 100:Formation System
W:基板 W: Substrate
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JPH1064782A (en) * | 1996-08-14 | 1998-03-06 | Nikon Corp | Scanning aligner |
JP2004294770A (en) * | 2003-03-27 | 2004-10-21 | Dainippon Printing Co Ltd | Exposure method and exposure system |
TW201203312A (en) * | 2010-01-07 | 2012-01-16 | Hoya Corp | Method of manufacturing a photomask, photomask, and method of manufacturing a display device |
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JP2000284492A (en) * | 1999-03-30 | 2000-10-13 | Seiko Epson Corp | Exposure apparatus, exposure method, and storage medium storing program |
JP4353498B2 (en) * | 2002-04-30 | 2009-10-28 | キヤノン株式会社 | Management apparatus and method, device manufacturing method, and computer program |
JP2004172471A (en) * | 2002-11-21 | 2004-06-17 | Nikon Corp | Exposure method and apparatus |
JP2005092137A (en) | 2003-09-19 | 2005-04-07 | Nikon Corp | Aligner and exposure method |
WO2007077901A1 (en) * | 2005-12-28 | 2007-07-12 | Nikon Corporation | Exposure system, device manufacturing system, exposure method and device manufacturing method |
JP2011009309A (en) * | 2009-06-23 | 2011-01-13 | Canon Inc | Exposure system, control apparatus of exposure apparatus, and method of manufacturing device |
JP5762072B2 (en) * | 2011-03-24 | 2015-08-12 | 株式会社Screenホールディングス | Position detection method, pattern drawing method, pattern drawing apparatus, and computer program |
KR101890793B1 (en) * | 2014-06-12 | 2018-08-22 | 에이에스엠엘 네델란즈 비.브이. | Lithographic apparatus and exposure method |
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JPH1064782A (en) * | 1996-08-14 | 1998-03-06 | Nikon Corp | Scanning aligner |
JP2004294770A (en) * | 2003-03-27 | 2004-10-21 | Dainippon Printing Co Ltd | Exposure method and exposure system |
TW201203312A (en) * | 2010-01-07 | 2012-01-16 | Hoya Corp | Method of manufacturing a photomask, photomask, and method of manufacturing a display device |
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KR102661409B1 (en) | 2024-04-29 |
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JP7336201B2 (en) | 2023-08-31 |
TW202101125A (en) | 2021-01-01 |
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CN113439238B (en) | 2024-09-17 |
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