TW202117943A - Multi-chip three-dimensional stacked package with fan-out structure - Google Patents

Abstract

The invention provides a fan-out multi-chip three-dimensional stacked module package structure, wherein the structure includes at least a plurality of electronic components and an interposer, and the interposer can have a single-sided, double-sided or multi-layer wiring circuit and has 2D or 3D Electrical transmission characteristics; a plurality of electronic components are coupled to the interposer in a coplanar or non-coplanar manner to form a chipset that is covered and filled with an organic material. In addition, there is a circuit that fan-folds from the electronic component to the organic cover, and the cover material may have a plurality of electrical paths connecting one or both ends of the organic cover, the electrical path may be connected to the electronic component, the interposer or the organic layer The line. The goal is to make the packaging structure more functionally integrated, more flexible in design, and smaller in package size.

Description

Fan-out type multi-chip three-dimensional stacked module packaging structure

The present invention provides a fan-out type multi-chip three-dimensional stacked module package structure, which includes at least a plurality of electronic components and intermediary components. The intermediary components can have single-sided, double-sided, or multilayer wiring circuits and have planar or upper and lower electrical properties. (Grounding, telecommunications, power or thermal conductivity) connection And the plurality of electronic components are connected with the intermediary element in a coplanar or non-coplanar manner to form a chip set, and the chip set is completely or partly covered with an organic material; the organic material coated chip set can have from The electronic component fan out to the circuit of the organic coating body, and the coating material can have a plurality of electrical channels connected to one end or both ends of the organic coating body, and the electrical channel can be connected to the chip and to the intermediate component. Connect or connect with the fan-out circuit to the organic coating body. Its purpose is to enable the package structure to have better function integration, more flexible design planning, and reduce the volume of the package body.

In recent years, due to the advent of mobile communications, huge amounts of data, 5G and artificial intelligence, various fields such as logistics, manufacturing, medical care, food, clothing, housing and transportation are inseparable from this category. In this demand, there is a need for electronic products. Requires higher bandwidth, lower delay speed and lower energy consumption. In order to meet these needs, the past semiconductor industry has undergone changes from the vertical supply chain ecology of design, manufacturing, packaging and hardware integration. System factories, foundries, packaging and testing plants, equipment vendors and material vendors will cooperate and reorganize. , Integrating heterogeneous chips with different functions, materials and technologies and system architecture to create high-value terminal products and become the mainstream technology and direction. In each of the three-dimensional package stacking forms, the use of through-hole packaging on the chip can shorten the telecommunications transmission path between the chips and reduce the noise generated by the signal. However, as the circuits of electronic products become more sophisticated, the distribution density of circuit components is too high , Complicated process technology, long design time and high production cost, etc., have caused the rise of heterogeneous integration system construction technology, which will bring the system to higher integration and higher functions. Among them, the modular electronic system architecture with functional modules is more recent important heterogeneous integration trend. The present invention provides a heterogeneous integration architecture of a fan-out multi-chip three-dimensional stacked module packaging architecture, which not only improves the integration of the system, but also has more flexible design planning and reduces the volume of the package.

A conventional stacked integrated circuit chip package, such as US Patent No. 9,679,882, discloses a high-density integrated circuit chip package structure, please refer to Figure 1A; the package structure is formed by stacking chips, with the active surfaces of the chips facing the same direction For stacking, the communication of each chip is through the via hole in the photosensitive material layer to transmit the signal to the photosensitive material table Signal transmission is performed behind the surface. For example, the second chip 132 and the third chip 133 do not use silicon vias as the electrical connection path, but use a plurality of via holes in the photosensitive material and the redistributed circuit to form an electrical connection path. , It is possible to integrate multiple chips. However, the signal transmission method of this stacking method will cause the delay of signal transmission, and there are restrictions on the position of the output/input metal pads of the stacked chips, such as the second chip in Figure 1. 132. The output/input metal pads must be located outside the size of the third chip 133, which means that the size of the second chip 132 must be larger than the size of the third chip 133, or the placement position must be staggered, which limits the choice of chip types. For homogeneous chips The integration and stacking does not apply.

The Republic of China Patent Publication No. I3953185 proposes a thin three-dimensional stacked package structure using an embedded chip carrier. In this structure, the first electronic component chip 201 and the second electronic component chip 202 are attached to each other with the electronic components facing outwards. The chip carrier 206 is used to carry the electronic component chip set. Through the through-hole structure on the chip carrier between the chips, the electronic component chip telecommunication and the through-holes on the chip carrier are connected to each other to achieve the purpose of vertical signal conduction and three-dimensional stack packaging. However, the signal transmission between the chips must transmit the signals to each other through vias, which will cause signal delays in high-speed transmission applications, and there is no more explanation on how to transmit signals with more than two chips.

In view of the heterogeneous integration trend of modular electronic system architecture with functional modules, under the requirements of mobile communication and high-speed computing, how to reduce the production cost, intellectual property cost, production complexity and time to market of highly integrated chips A high-density, reusable, high-speed transmission, and high-reliability architecture, and the design and assembly of multiple microelectronic component packaging structures that can be adjusted flexibly according to application requirements and functions are currently urgent problems.

In view of the lack of the aforementioned technology, a stacked electronic package with multiple electronic components with a high degree of system integration will become an important framework for applications in the fields of mobile communications, massive data, 5G, and artificial intelligence. The present invention has the following objectives: The present invention proposes a utilization fan Out-type multi-chip three-dimensional stacked module packaging structure, this structure contains at least a plurality of electronic components and intermediary components, the intermediary components can have single-sided, double-sided or multi-layer wiring circuit and have planar or upper and lower electrical (grounding, telecommunications, Power or thermal conductivity) connection function; and the plurality of electronic components are coplanar or The non-coplanar way is connected with the intermediate element to form a chip set, and the chip set is completely or partly covered with organic material; the chip set covered with organic material may have a circuit fan-out from the electronic component to the organic covering body, and The cladding material can have a plurality of electrical channels connected to one end or both ends of the organic cladding body, and the electrical channels can be connected with the chip, connected with the intermediate element or with the circuit fan-out to the organic cladding body Phase connection. Its purpose is to enable the package structure to have higher transmission speed, better function integration, more flexible design planning, and reduce the volume of the package body.

One purpose of the present invention is to improve the transmission speed and integration problems between electronic components. This architecture can effectively stack and transmit chips with required functions, and at least one electronic component and an intermediate component have an active component layer to an active component layer structure. It is installed, and then configured with other electronic components in an optimal way to form a new form of chip module, which greatly improves the integration of various homogenous or heterogeneous electronic components.

Another purpose of the present invention is the flexibility of design. For each application requirement, the required functional electronic components can be placed in this structure, so as to achieve high-efficiency electrical transmission in the package module, and the matching and use of each unit. , To optimize the overall system performance.

Another object of the present invention is to reduce the thickness of the electronic component stacked package structure. The present invention stacks a plurality of electronic components and intermediate components in a coplanar or non-coplanar manner, and then re-distributes the circuit and a plurality of electrical channels in a fan-out type. For integration, this method can effectively reduce the height of the chip stack package structure.

In order to achieve the foregoing objectives, the fan-out multi-chip three-dimensional stacked module package structure proposed by the present invention includes at least a plurality of electronic components and intermediary components. The intermediary components can have single-sided, double-sided or multilayer wiring circuits and have flat or The upper and lower electrical connection function; and the plurality of electronic components are connected with the intermediate element in a coplanar or non-coplanar manner to form a chip set, and the chip set is completely or partially covered with an organic material; the chip set covered by the organic material It can have circuits that fan out from the electronic component to the organic coating, and the coating material can have a plurality of electrical channels connected to one end or both ends of the organic coating, and the electrical channels can be connected to the chip and The intermediate element is connected or connected with the circuit from the fan-out to the organic covering body.

The foregoing and other objects, features, and advantages of the present invention will be referred to in the following The detailed description of the preferred embodiment is more clear.

The invention discloses a multi-chip three-dimensional stacked packaging structure. In detail, the present invention uses a multi-chip integrated packaging design method to stack and package electronic chips to form an integrated structure with higher integration and reduced packaging volume. The embodiments of the present invention are described in detail as follows. Only the preferred embodiments described are described, and are not intended to limit the present invention.

2A to 2H are schematic cross-sectional diagrams of the structure of the electronic chip stacked package unit of the present invention, for explaining the structure of the stacked unit of the present invention. The first electronic component 201 in FIG. 2A, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the first electronic component can be an active electronic component, a passive Electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The second electronic element chip 202, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the second electronic element layer, the electronic element can be an active electronic element , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The intermediate element 203 has a double-sided wiring circuit and has the function of planar and upper and lower electrical connection. The active layer of at least one of the first electronic element and the second electronic element faces the intermediate element, and is redistributed with the intermediate element The circuit is connected to form a chip set 207; the material of the intermediary element can be silicon, germanium, silicon oxide, aluminum oxide, organic material, or a mixture of the above elements or a combination of other elements. The organic coating material 208 encapsulates the chip set in a partial coating manner, and the chip set may have a circuit 209 fanned out from the electronic component to the side of the organic coating body. The electrical channel 210 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body; the electrical channel material can be copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials; the electrical channel is also a good heat conductor, with the characteristics of heat conduction.

In FIG. 2B, the first electronic component 201, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the first electronic component can be an active electronic component, a passive Electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The second electronic component chip 202, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; In the second electronic component layer, the electronic component can be an active electronic component, a passive electronic component, a sensing component, a test component, a microelectromechanical chip or a combination of the above electronic components. The intermediate element 203 has a double-sided wiring circuit and has the function of planar and upper and lower electrical connection. The active layer of at least one of the first electronic element and the second electronic element faces the intermediate element, and is redistributed with the intermediate element The circuit is connected to form a chip set 207; the material of the intermediary element can be silicon, germanium, silicon oxide, aluminum oxide, organic material, or a mixture of the above elements or a combination of other elements. The organic cladding material 208 encapsulates the chip set in a completely encapsulated manner, and the chip set may have a circuit 209 fanned out from the electronic component to the side of the organic cladding body. The electrical channel 210 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body; the electrical channel material can be copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials; the electrical channel is also a good heat conductor, with the characteristics of heat conduction.

As shown in FIG. 2C, the first electronic component 201, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the first electronic component can be an active electronic component, Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The second electronic element chip 202, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the second electronic element layer, the electronic element can be an active electronic element , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The intermediate element 203 has a single-sided wiring circuit and has the function of planar and upper and lower electrical connection. The active layer of at least one of the first electronic element and the second electronic element faces the intermediate element and is re-wired with the intermediate element The circuit is connected to form a chip set 207; the material of the intermediary element can be silicon, germanium, silicon oxide, aluminum oxide, organic material, or a mixture of the above elements or a combination of other elements. The organic coating material 208 encapsulates the chip set in a partial coating manner, and the chip set may have a circuit 209 fanned out from the electronic component to the side of the organic coating body. The electrical channel 210 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body; the electrical channel material can be copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials; the electrical channel is also a good heat conductor, with the characteristics of heat conduction.

As depicted in Figure 2D, the first electronic component 201, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the first electronic component can be an active electronic component , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The second electronic element chip 202, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the second electronic element layer, the electronic element can be an active electronic element , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The intermediate element 203 has a double-sided wiring circuit and has the function of planar and upper and lower electrical connection. The active layer of at least one of the first electronic element and the second electronic element faces the intermediate element, and is redistributed with the intermediate element The circuit is connected to form a chip set 207; the material of the intermediary element can be silicon, germanium, silicon oxide, aluminum oxide, organic material, or a mixture of the above elements or a combination of other elements. The organic coating material 208 encapsulates the chip set in a partial coating manner, and the chip set may have circuits 209 and 211 fanned out from the electronic components to both sides of the organic coating body. The electrical channel 210 is located in the organic cladding body, and the electrical channel fan-out is connected to the lines on both sides of the organic cladding body; the electrical channel material can be copper, nickel, iron, aluminum, cobalt, gold, or A combination of the above metal material alloys or other conductive materials; the electrical channel is also a good heat conductor, with the characteristics of heat conduction.

2E, the first electronic component 201, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the first electronic component can be an active electronic component, a passive Electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The second electronic element chip 202, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the second electronic element layer, the electronic element can be an active electronic element , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The third electronic component chip 212, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the third electronic component layer, the electronic component can be an active electronic component , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The intermediate element 203 has a double-sided wiring circuit and has the function of planar and upper and lower electrical connection. The active layer of at least one of the aforementioned multiple electronic elements faces the intermediate element and is connected with the redistributed circuit of the intermediate element to form a chip set 207; The material of the intermediate element can be silicon, germanium, silicon oxide, aluminum oxide, organic materials, or a mixture of the above elements or a combination of other elements. The organic coating material 208 encapsulates the chip set in a completely encapsulated manner, and the chip set may have a circuit 209 fanned out from the electronic component to the side of the organic coating body. The electrical channel 210 is located in the organic cladding body, and the electrical channel is connected with the circuit fan-out to the organic cladding body; the electrical channel material can be copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials; the electrical channel is also a good heat conductor with the property of heat conduction.

In the first electronic component 201 in FIG. 2F, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the first electronic component can be an active electronic component, a passive electronic component Components, sensing components, test components, MEMS chips or a combination of the above electronic components. The second electronic element chip 202, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the second electronic element layer, the electronic element can be an active electronic element , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The intermediate element 203 has a multi-layer wiring circuit and has the function of plane and upper and lower electrical connections. The active layer of at least one of the first electronic element and the second electronic element faces the intermediate element and is re-routed with the intermediate element The chipset 207 is formed by connecting; the material of the intermediary element can be silicon, germanium, silicon oxide, aluminum oxide, organic material, or a mixture of the above elements or a combination of other kinds of elements. The organic coating material 208 encapsulates the chip set in a partial coating manner, and the chip set may have a circuit 209 fanned out from the electronic component to the side of the organic coating body. The electrical channel 210 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body; the electrical channel material can be copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials; the electrical channel is also a good heat conductor, with the characteristics of heat conduction.

As depicted in Figure 2G, the first electronic component 201, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the first electronic component can be an active electronic component , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The second electronic component chip 202, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics Together; the second electronic component layer, the electronic component can be an active electronic component, a passive electronic component, a sensing component, a test component, a microelectromechanical chip or a combination of the above electronic components. The intermediate element 203 has a double-sided wiring circuit and has the function of planar and upper and lower electrical connection. The active layer of at least one of the first electronic element and the second electronic element faces the intermediate element, and is redistributed with the intermediate element The circuit is connected to form a chip set 207; the material of the intermediary element can be silicon, germanium, silicon oxide, aluminum oxide, organic material, or a mixture of the above elements or a combination of other elements. The organic coating material 208 encapsulates the chip set in a partial coating manner, and the chip set may have a circuit 209 fanned out from the electronic component to the side of the organic coating body. The electrical channel 210 is located in the organic cladding body, and the electrical channel is connected to the fan-out circuit to the organic cladding body; the electrical channel material can be copper, nickel, iron, aluminum, cobalt, gold, or A combination of the above metal material alloys or other conductive materials; the electrical channel is also a good heat conductor, with the characteristics of heat conduction. The second electrical channel 220 is located in the organic cladding body, and the electrical channel is connected with the intermediate element and the fan-out circuit to the organic cladding body is connected; the electrical channel material can be copper, nickel, iron, Aluminum, cobalt, gold, or a combination of the above metal material alloys or other conductive materials.

As depicted in Figure 2H, the first electronic component 201, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the first electronic component can be an active electronic component , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The second electronic element chip 202, the material composition of the chip can be silicon, germanium, tin, carbon, or a combination of the above elements and other elements with semiconductor characteristics; the second electronic element layer, the electronic element can be an active electronic element , Passive electronic components, sensing components, test components, MEMS chips or a combination of the above electronic components. The intermediate element 203 has a double-sided wiring circuit and has the function of planar and upper and lower electrical connection. The active layer of at least one of the first electronic element and the second electronic element faces the intermediate element, and is redistributed with the intermediate element The circuit is connected to form a chip set 207; the material of the intermediary element can be silicon, germanium, silicon oxide, aluminum oxide, organic material, or a mixture of the above elements or a combination of other elements. The organic coating material 208 encapsulates the chip set in a partial coating manner, and the chip set may have circuits 209 and 211 fanned out from the electronic components to both sides of the organic coating body. The electrical channel 210 is located in the organic cladding body, and the electrical channel is connected with the circuits on both sides of the fan-out to the organic cladding body; the electrical channel material can be copper, nickel, iron, Aluminum, cobalt, gold, or a combination of the above metal material alloys or other conductive materials; the electrical channel is also a good heat conductor and has the characteristics of heat conduction. The second electrical channel 220 is located in the organic cladding body, and the electrical channel is connected with the intermediate element and the fan-out circuit to the organic cladding body is connected; the electrical channel material can be copper, nickel, iron, Aluminum, cobalt, gold, or a combination of the above metal material alloys or other conductive materials.

3A to 3F are the second embodiment of the present invention, which is the structure of the electronic chip stacked package unit of the present invention. In FIG. 3A, the intermediate element 303 has a double-sided wiring circuit, and has the function of planar and upper and lower electrical connection. In the first electronic component 301 and the second electronic component chip 302, the active layer of at least one of the electronic components faces the intermediate component, and is connected with the redistribution circuit of the intermediate component to form a chip group 307. The organic coating material 308 encapsulates the chip set in a partial coating manner, and the chip set may have a circuit 309 fanned out from the electronic component to the side of the organic coating body. The electrical channel 310 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body. The telecommunication contact 314 is located on the outside of the electronic packaging structure and can be used to connect with other semiconductor components or as a test contact or as an electronic packaging structure with test functions; the telecommunication contact can be printed by screen printing, stencil printing, and roller Formed by type coating, inkjet coating, ball planting, photolithography or other suitable methods; the telecommunications contact material can be tin, silver, indium, copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials.

In FIG. 3B, the intermediate element 303 has a double-sided wiring circuit and has the function of planar and upper and lower electrical connection. In the first electronic component 301 and the second electronic component chip 302, the active layer of at least one of the electronic components faces the intermediate component, and is connected with the redistribution circuit of the intermediate component to form a chip group 307. The organic cladding material 308 encapsulates the chip set in a completely encapsulated manner, and the chip set may have a circuit 309 fanned out from the electronic component to the side of the organic cladding body. The electrical channel 310 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body. The telecommunication contact 314 is located on the outside of the electronic packaging structure and can be used to connect with other semiconductor components or as a test contact or as an electronic packaging structure with test functions; the telecommunication contact can be printed by screen printing, stencil printing, and roller Formed by type coating, inkjet coating, ball planting, photolithography or other suitable methods; the telecommunications contact material can be tin, silver, indium, copper, nickel, iron, aluminum, cobalt, gold, or more Metal material alloy or other species A combination of conductive materials.

As shown in FIG. 3C, the intermediate element 303 has a single-sided wiring circuit and has the function of planar and upper and lower electrical connection. In the first electronic component 301 and the second electronic component chip 302, the active layer of at least one of the electronic components faces the intermediate component, and is connected with the redistribution circuit of the intermediate component to form a chip group 307. The organic coating material 308 encapsulates the chip set in a partial coating manner, and the chip set may have a circuit 309 fanned out from the electronic component to the side of the organic coating body. The electrical channel 310 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body. The telecommunication contact 314 is located on the outside of the electronic packaging structure and can be used to connect with other semiconductor components or as a test contact or as an electronic packaging structure with test functions; the telecommunication contact can be printed by screen printing, stencil printing, and roller Formed by type coating, inkjet coating, ball planting, photolithography or other suitable methods; the telecommunications contact material can be tin, silver, indium, copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials.

As depicted in FIG. 3D, the intermediate element 303 has a double-sided wiring circuit, and has the function of planar and upper and lower electrical connection. In the first electronic component 301 and the second electronic component chip 302, the active layer of at least one of the electronic components faces the intermediate component, and is connected with the redistribution circuit of the intermediate component to form a chip group 307. The organic coating material 308 encapsulates the chip set in a partial coating manner, and the chip set may have circuits 309 and 311 fanned out from the electronic components to both sides of the organic coating body. The electrical channel 310 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body. The telecommunication contact 314 is located on the outside of the electronic packaging structure and can be used to connect with other semiconductor components or as a test contact or as an electronic packaging structure with test functions; the telecommunication contact can be printed by screen printing, stencil printing, and roller Formed by type coating, inkjet coating, ball planting, photolithography or other suitable methods; the telecommunications contact material can be tin, silver, indium, copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials.

As shown in FIG. 3E, the intermediate element 303 has a double-sided wiring circuit and has the function of planar and upper and lower electrical connection. The active layer of at least one of the first electronic component 301, the second electronic component chip 302 and the third electronic component 312 faces the intermediate component and is connected to the redistributed circuit of the intermediate component to form a chip group 307. Organic coating material 308, with partial coating The chip set is covered in a way, and the chip set can have a circuit 309 fanned out from the electronic component to the side of the organic covering body. The electrical channel 310 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body. The telecommunication contact 314 is located on the outside of the electronic packaging structure and can be used to connect with other semiconductor components or as a test contact or as an electronic packaging structure with test functions; the telecommunication contact can be printed by screen printing, stencil printing, and roller Formed by type coating, inkjet coating, ball planting, photolithography or other suitable methods; the telecommunications contact material can be tin, silver, indium, copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials.

In FIG. 3F, the intermediate element 303 has a multilayer wiring circuit, and has the function of planar and upper and lower electrical connection. In the first electronic component 301 and the second electronic component chip 302, the active layer of at least one of the electronic components faces the intermediate component, and is connected with the redistribution circuit of the intermediate component to form a chip group 307. The organic coating material 308 encapsulates the chip set in a partial coating manner, and the chip set may have a circuit 309 fanned out from the electronic component to the side of the organic coating body. The electrical channel 310 is located in the organic cladding body, and the electrical channel is connected to the circuit fan-out to the organic cladding body. The telecommunication contact 314 is located on the outside of the electronic packaging structure and can be used to connect with other semiconductor components or as a test contact or as an electronic packaging structure with test functions; the telecommunication contact can be printed by screen printing, stencil printing, and roller Formed by type coating, inkjet coating, ball planting, photolithography or other suitable methods; the telecommunications contact material can be tin, silver, indium, copper, nickel, iron, aluminum, cobalt, gold, or more A combination of metal material alloys or other conductive materials.

4 is a third embodiment of the present invention, illustrating a cross-sectional schematic diagram of the relative positions of the electrical channels and the telecommunication contacts of the electronic component stacked package unit structure of the present invention. As shown in FIG. 4A, the relative positions of the electrical channels, fan-out lines, and telecommunication contacts are illustrated in FIGS. 4B to 4D, including: an organic coating material 408, which contains an electrical channel 410, FIG. 4B It is illustrated that the telecommunication contact 414 is located directly below one end of the electrical channel 410, and the telecommunication contact 415 is located directly above the other end of the electrical channel 410. 4C illustrates that the telecommunications contact 414 is located directly below one end of the electrical channel 410, and the telecommunications contact 416 is located above the fan-out line 411 connected to the electrical channel 410. FIG. 4D illustrates that the telecommunication contact 417 is located under the fan-out circuit connected to the electrical channel 410, and the telecommunication contact 416 is located at the connection to the electrical channel 410 Connect the fan-out line 411 above. In addition, the aforementioned telecommunication contacts 414, 415, 416, and 417 can all be connected with the test signals of the electronic components inside the aforementioned package structure to form an electronic package structure with test functions.

5 is a fourth embodiment of the present invention, illustrating a schematic diagram of the electrical channel structure of the electronic component stacked package unit structure of the present invention. 5A and 5B illustrate the electrical channel 510 in the stacked package unit 500 in the architecture of the present invention, and the shape of the electrical channel 510 may have a turning shape.

6 is a fifth embodiment of the present invention, illustrating that the electronic component stacked package unit structure of the present invention can form a non-coplanar three-dimensional stacked electronic package structure by using a plurality of the electronic package structure unit bodies, wherein the electronic package structure is located The electrical channel can use the aforementioned fan-out circuit to the organic cladding body for telecommunications transmission, so that the plurality of electronic packaging structure unit bodies are electrically connected as shown in Figs. 6A to 6C. 6A shows that the electronic component stacked package unit 200 is connected to the fan-out circuit 209 of another electronic component stacked package unit 200 through a circuit 209 fan-out from the electronic component to one side of the organic cladding body. FIG. 6B shows that the electronic component stacked package unit 300 is connected to the telecommunication contact 314 of another electronic component stacked package unit 300 through the telecommunication contact 314.

The preferred embodiments of the present invention are described above, and if you are familiar with the skills in this field, you can make some modifications without departing from the spirit of the present invention. The scope of patent protection is more dependent on the scope of the attached patent application and its equivalent fields. set.

110‧‧‧Tin ball

112‧‧‧Metal layer under the ball

114‧‧‧Rewiring

132‧‧‧Second chip

133‧‧‧third chip

141‧‧‧wafer

200‧‧‧Electronic chip stacked package unit structure

201‧‧‧The first electronic component

202‧‧‧Second electronic component

203‧‧‧Intermediary components

204‧‧‧First wiring circuit

205‧‧‧Second wiring circuit

206‧‧‧Electrical connection bump

207‧‧‧Chipset

208‧‧‧Organic coating

209‧‧‧The first fan-out line

210‧‧‧Electrical channel

211‧‧‧The second fan-out line

212‧‧‧Third electronic component

213‧‧‧Intermediate components for multilayer wiring circuits

220‧‧‧Second electrical channel

300‧‧‧Electronic chip stacked package unit structure

301‧‧‧The first electronic component

302‧‧‧Second electronic component

303‧‧‧Intermediary components

304‧‧‧First wiring circuit

305‧‧‧Second wiring circuit

306‧‧‧Electrical connection bump

307‧‧‧Chipset

308‧‧‧Organic coating

309‧‧‧The first fan-out line

310‧‧‧Electrical channel

311‧‧‧The second fan-out line

312‧‧‧Third electronic component

313‧‧‧Intermediate components for multilayer wiring circuits

314‧‧‧Telecom Contact

400‧‧‧Electronic chip stacked package unit structure

401‧‧‧The first electronic component

402‧‧‧Second electronic component

403‧‧‧Intermediary components

404‧‧‧First wiring circuit

405‧‧‧Second wiring circuit

406‧‧‧Electrical connection bump

408‧‧‧organic coating

409‧‧‧The first fan-out line

410‧‧‧electrical channel

414‧‧‧Telecom Contact

415‧‧‧Telecom contacts directly connected to electrical channels

416‧‧‧Telecom contacts connected to electrical channels by wiring circuits

500‧‧‧Electronic chip stacked package unit structure

501‧‧‧First electronic component

502‧‧‧Second electronic component

503‧‧‧Intermediary components

504‧‧‧First wiring circuit

505‧‧‧Second wiring circuit

506‧‧‧Electrical connection bump

508‧‧‧Organic coating

509‧‧‧The first fan-out line

510‧‧‧Electrical channel

514‧‧‧Telecom Contact

600‧‧‧Electronic chip stack package structure

601‧‧‧First electronic chip stack package unit structure

602‧‧‧Second electronic chip stacked package unit structure

603‧‧‧The first fan-out line

604‧‧‧The second fan-out line

605‧‧‧The third electronic chip stack package unit structure

606‧‧‧The fourth electronic chip stacked package unit structure

607‧‧‧Telecom Contact

The preferred embodiment of the present invention will be explained in more detail in the following description with the following figures:

FIG. 1A is a schematic diagram of a conventional multi-chip integrated stacked chip package structure using a plurality of vias in a photosensitive material and re-layout lines to form electrical communication paths.

2A to 2H are the first embodiment of the present invention, and are cross-sectional views of the structure of the electronic chip stack package unit of the present invention.

3A to 3F are the second embodiment of the present invention, and are cross-sectional views of the structure of the electronic chip stack package unit of the present invention.

4A to 4D show the third embodiment of the present invention, in which the telecommunication contact point may not be above or below the via hole.

Figure 5 is a fourth embodiment of the present invention, in which the electrical channel may have a turning shape.

FIG. 6 is a fifth embodiment of the present invention, in which the electronic component stacked packaging unit structure can form a three-dimensional stacked structure by using a plurality of the electronic packaging structure unit bodies.

200‧‧‧Electronic chip stacked package unit structure

201‧‧‧The first electronic component

202‧‧‧Second electronic component

203‧‧‧Intermediary components

204‧‧‧First wiring circuit

205‧‧‧Second wiring circuit

206‧‧‧Electrical connection bump

207‧‧‧Chipset

208‧‧‧Organic coating

209‧‧‧The first fan-out line

210‧‧‧Electrical channel

211‧‧‧The second fan-out line

Claims (15)

An electronic packaging structure comprising at least: a plurality of electronic components and intermediary components. The intermediary components can have single-sided, double-sided or multilayer wiring circuits and have planar or upper and lower electrical (grounding, telecommunications, power, or thermal conductivity) connection functions; And the plurality of electronic components are connected with the intermediary element in a coplanar or non-coplanar manner to form a chip set, and the chip set is completely or partially covered with an organic material; the chip set covered by the organic material may have a fan The circuit out of the organic cladding body, and the cladding material can have a plurality of electrical channels connected to one end or both ends of the organic cladding body, and the electrical channels can be connected to the chip, to the intermediate element, or to The fan-out line is connected to the organic cladding body. For example, the electronic packaging structure of the first item of the patent application, wherein the active layer of at least one of the plurality of electronic components faces the intermediate component and is connected to the redistributed circuit of the intermediate component. For example, in the electronic packaging structure of the first item of the patent application, the material of the intermediate element can be silicon, germanium, silicon oxide, aluminum oxide, organic material, or a mixture of the above elements or a combination of other elements. For example, the electronic packaging structure of the first item of the scope of patent application has a plurality of telecommunication contacts on at least one side of the electronic packaging structure, and the telecommunication contacts can be used for connection with other semiconductor components or used as test contacts. For example, in the electronic packaging structure of the first item of the patent application, the electronic components mentioned can be active electronic components, passive electronic components, sensing components, test components, micro-electromechanical chips or a combination of the above electronic components. For example, in the electronic packaging structure of the first item in the scope of the patent application, the electrical channel can be copper, nickel, iron, aluminum, cobalt, gold, or a combination of the above metal material alloys or other conductive materials. For example, in the electronic packaging structure of the first item of the scope of patent application, the electrical channel is also a good thermal conductor and has the characteristic of heat conduction. For example, in the electronic packaging structure of the first item of the patent application, the electrical channels described therein can be formed by machining, dry etching, wet etching, laser drilling or other suitable methods. For example, in the electronic packaging structure of the first item of the patent application, the electrical channels described therein can be formed by mechanical drilling, laser drilling, dry and wet etching or other suitable methods. For example, the electronic packaging structure of item 3 of the scope of patent application, the telecommunications contacts mentioned in it, can use screen printing, stencil printing, roller coating, inkjet coating, ball planting, lithography technology or other suitable methods form. For example, in the electronic packaging structure of item 1 of the scope of application, the electrical channels mentioned therein can be linear vias or structures with turns. For example, in the electronic package structure of item 3 of the scope of application, the electrical channels mentioned therein can be linear vias or structures with turns. For example, in the electronic packaging structure of item 3 of the scope of patent application, the telecommunications contact material can be tin, silver, indium, copper, nickel, iron, aluminum, cobalt, gold, or the above metal material alloy or other kinds of materials. A combination of conductive materials. For example, in the electronic packaging structure of item 3 of the scope of patent application, the telecommunications contacts can be connected with the test signals of the electronic components in the aforementioned packaging structure to form an electronic packaging structure with test functions. For example, the electronic packaging structure of item 1 of the scope of patent application can form a non-coplanar three-dimensional stacked electronic packaging structure by a plurality of the electronic packaging structure unit bodies, wherein the The electrical channel of the electronic packaging structure can use the aforementioned circuit from the fan-out to the organic cladding body for telecommunications transmission, so that the plurality of electronic packaging structure unit bodies are electrically connected. For the electronic packaging structure of item 3 of the scope of application, the telecommunications contacts at both ends of the electrical channel may or may not be located at the vertical position of the end of the electrical channel. For example, the electronic packaging structure of the first item of the scope of patent application, the telecommunication channel can be a linear structure or a structure with at least one turning point. Such as the electronic packaging structure of the first item in the scope of patent application, the thickness of the organic cladding body may be equal to or not equal to the thickness of the chip set. For example, the electronic packaging structure of the first item of the scope of patent application, wherein the covering area is made of organic materials, and this area can be used for glue injection, screen printing, stencil printing, roller coating, inkjet coating, and laminating , Hot pressing or other suitable way to form.

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