TW202022438A - Display apparatus - Google Patents
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- TW202022438A TW202022438A TW107144148A TW107144148A TW202022438A TW 202022438 A TW202022438 A TW 202022438A TW 107144148 A TW107144148 A TW 107144148A TW 107144148 A TW107144148 A TW 107144148A TW 202022438 A TW202022438 A TW 202022438A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Layout of the interconnection structure
- H01L23/5286—Arrangements of power or ground buses
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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Abstract
Description
本發明是有關於一種顯示裝置。The present invention relates to a display device.
當顯示裝置融入大眾生活後,消費者已習慣顯示裝置所帶來的便利性,因此顯示裝置已經大幅地應用於各領域中。隨著人們對於顯示品質要求提高,顯示裝置內設有的電子元件密度也隨之提升,走線區會因設置於其兩旁的電子元件所佔有的面積越來越小,走線寬度也隨之限縮。但,限縮走線寬度同時也限制了其電流承載能力。After the display device is integrated into the public life, consumers have become accustomed to the convenience brought by the display device, so the display device has been widely used in various fields. As people’s requirements for display quality increase, the density of electronic components in the display device has also increased. The wiring area will become smaller and smaller due to the electronic components placed on both sides, and the wiring width will follow. Limit shrinkage. However, limiting the trace width also limits its current carrying capacity.
並且,隨著顯示裝置尺寸的加大,走線也會隨之拉長,加上走線寬度限縮的趨勢這兩大因素使得內阻效應更為明顯。走線會隨著內阻效應而產生不可忽略的壓差,導致電路內的電流不穩定,進而影響顯示品質。Moreover, as the size of the display device increases, the traces will also be elongated, and the two major factors of the trend of trace width reduction make the internal resistance effect more obvious. The wiring will produce a non-negligible voltage difference due to the internal resistance effect, which will cause the current in the circuit to be unstable, which will affect the display quality.
本發明提供一種顯示裝置,其具有良好的電流承載能力以及較低的內阻效應。The invention provides a display device which has good current carrying capacity and low internal resistance effect.
在本發明的一實施例中提出一種顯示裝置,包括基板、多個接墊、多條電源線、多條訊號線、多個靜電防護元件以及多個分流元件。顯示裝置具有顯示區。基板包括多個顯示單元,且這些顯示單元設置於顯示區內。這些接墊設置於基板的側邊。這些接墊包括多個電源接墊以及多個訊號接墊。各電源接墊藉由一電源線電性連接於對應的顯示單元。各訊號接墊藉由一訊號線電性連接於對應的顯示單元。這些靜電防護元件設置於顯示區內,且這些顯示單元與這些接墊電性連接。靜電防護元件用以提供靜電宣洩路徑。這些分流元件設置於顯示區內。在這些分流元件中,最靠近這些電源接墊的分流元件與電源接墊之間藉由旁通路徑與對應的電源接墊連通,且旁通路徑繞過至少一顯示單元。In an embodiment of the present invention, a display device is provided, which includes a substrate, a plurality of pads, a plurality of power lines, a plurality of signal lines, a plurality of electrostatic protection components, and a plurality of shunt components. The display device has a display area. The substrate includes a plurality of display units, and these display units are arranged in the display area. These pads are arranged on the sides of the substrate. These pads include multiple power pads and multiple signal pads. Each power pad is electrically connected to the corresponding display unit through a power cord. Each signal pad is electrically connected to the corresponding display unit through a signal line. The electrostatic protection components are arranged in the display area, and the display units are electrically connected to the pads. The electrostatic protection component is used to provide an electrostatic discharge path. These shunt elements are arranged in the display area. Among the shunt elements, the shunt element closest to the power pads and the power pad are connected to the corresponding power pad through a bypass path, and the bypass path bypasses at least one display unit.
基於上述,在本發明實施例的顯示裝置中,電源接墊可由旁通路徑先傳遞電流至最靠近電源接墊的分流元件,最靠近電源接墊的分流元件再進行分流並藉由電源線將電流傳遞至其鄰近的顯示單元與其他的分流元件,以提供電流給整個顯示區內的這些顯示單元。由於旁通路徑繞過顯示單元,因此旁通路徑的走線寬度可設計的較寛,其電流承載能力較佳,且電阻較低,可有效地降低顯示裝置內的內阻效應。Based on the above, in the display device of the embodiment of the present invention, the power pad can first transfer current to the shunt element closest to the power pad through the bypass path, and the shunt element closest to the power pad then shunts the current through the power line The current is transmitted to the adjacent display units and other shunt elements to provide current to these display units in the entire display area. Since the bypass path bypasses the display unit, the trace width of the bypass path can be designed to be wider, its current carrying capacity is better, and the resistance is lower, which can effectively reduce the internal resistance effect in the display device.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below and described in detail in conjunction with the accompanying drawings.
為求方便說明本發明實施例的顯示裝置的架構,顯示裝置可處於在方向D1、D2、D3所建構的一三維空間中。方向D1、D2、D3兩兩互為垂直。In order to facilitate the description of the structure of the display device of the embodiment of the present invention, the display device may be in a three-dimensional space constructed in the directions D1, D2, and D3. The directions D1, D2, and D3 are perpendicular to each other.
圖1為本發明一實施例的一種顯示裝置的上視示意圖。圖2為圖1的顯示裝置的側視圖。FIG. 1 is a schematic top view of a display device according to an embodiment of the invention. Fig. 2 is a side view of the display device of Fig. 1.
請先參照圖1,巨觀來說,於本實施例中,顯示裝置100具有顯示區DR。顯示區DR為顯示裝置100中用以顯示影像畫面的區域。請參照圖2,於本實施例中,顯示裝置100具有彼此相對的顯示側DS與背側BS。使用者可位於顯示側DS以觀賞顯示區DR所顯示的影像畫面。背對於顯示側DS的一側為背側BS。Please refer to FIG. 1 first. In macro terms, in this embodiment, the
圖3為圖1中的區域A的放大示意圖。圖4為圖3中剖線A-A’的剖面示意圖。圖5為圖3中剖線B-B’的剖面示意圖。圖6為圖1的顯示裝置的局部電路圖。FIG. 3 is an enlarged schematic diagram of area A in FIG. 1. Fig. 4 is a schematic cross-sectional view of the section line A-A' in Fig. 3. Fig. 5 is a schematic cross-sectional view taken along line B-B' in Fig. 3. Fig. 6 is a partial circuit diagram of the display device of Fig. 1.
請參照圖3至圖6,於本實施例中,顯示裝置100包括基板110、閘極驅動電路120、資料驅動電路130、電源供應器140、多個接墊150、多條電源線PSL、多條訊號線SL、多個靜電防護元件ESD與多個分流元件DE。於以下的段落中會詳細地說明上述各元件與其具有的功用。3-6, in this embodiment, the
請參照圖3、圖4與圖5,基板110為由多個半導體疊層所構成的半導體基板,且例如是畫素陣列基板(Pixel array substrate)。於本實施例中,基板110例如是薄膜電晶體基板(Thin film transistor substrate, TFT substrate),但不以此為限。基板110包括多個顯示單元DU。這些顯示單元DU例如是以矩陣的方式排列於顯示區DR內,且用以於顯示區DR內顯示出影像畫面。各顯示單元DU包括至少一子畫素PX。於本實施例中,子畫素PIX的數量以一個為例,於其他的實施例中,子畫素PX的數量亦可以是多個,本發明並不以此為限。Please refer to FIG. 3, FIG. 4, and FIG. 5, the
請參照圖5,閘極驅動電路120與資料驅動電路130依據影像資料來分別提供閘極訊號與資料訊號以驅動這些顯示單元DU而顯示影像畫面。Referring to FIG. 5, the gate driving circuit 120 and the data driving circuit 130 respectively provide a gate signal and a data signal according to the image data to drive the display units DU to display an image frame.
請參照圖4,電源供應器140為用以提供電源的電子元件。Please refer to FIG. 4, the
請參照圖3、圖4與圖5,這些接墊150設置於基板110的側邊SE,且依據功能的不同可分為多個電源接墊152與多個訊號接墊154(於圖3中以不同方式標示)。於本實施例中,電源接墊152係指與電源傳輸有關的接墊,而訊號接墊154係指與訊號傳輸有關的接墊。於本實施例中,依據傳輸的訊號不同,這些訊號接墊154又可分為多個第一訊號接墊154a與多個第二訊號接墊154b,這些第一訊號接墊124a設置於基板110的側邊SE,而這些第二訊號接墊154b則設置基板110的另一側邊(示於圖5)。這些第一訊號接墊154a傳輸的訊號不同於這些第二訊號接墊154b傳輸的訊號。詳細來說,資料驅動電路130與這些第一訊號接墊154a電性連接,這些第一訊號接墊154a所傳輸的訊號為資料訊號。另一方面,閘極驅動電路120與這些第二訊號接墊154b電性連接,這些第二訊號接墊154b所傳輸的訊號為閘極訊號。換言之,各第一訊號接墊154a作為資料接墊,且各第二訊號接墊154b作為閘極接墊。3, 4 and 5, these
請參照圖3,各電源線PSL係為用以連接各電源接墊152與顯示單元DU的連接線。這些電源線PSL(以兩條示意)大致上在方向D2上延伸。Please refer to FIG. 3, each power line PSL is a connection line for connecting each
請參照圖3,各訊號線SL係為用以連接一訊號接墊154與對應的顯示單元DU的連接線。詳細來說,這些訊號線SL依據傳輸的訊號不同而分為多條第一訊號線SL1與多條第二訊號線SL2。這些第一訊號線SL1大致上在方向D2上延伸。這些第二訊號線SL2大致上在方向D1上延伸。於本實施例中,這些第一訊號線SL1例如是用以傳遞閘極訊號,這些第二訊號線SL2例如是用以傳遞資料訊號,但不以此為限。各第一訊號接墊154a與對應的第一訊號線SL1電性連接。各第二訊號接墊154b與對應的第二訊號線SL2電性連接。第一訊號線SL1的延伸方向不同於第二訊號線SL2的延伸方向,且例如是彼此互為垂直。Please refer to FIG. 3, each signal line SL is a connection line used to connect a
靜電防護元件ESD係用以提供靜電宣洩路徑的電子元件。靜電防護元件ESD可以是多個薄膜電晶體T(Transistor thin film, TFT)、多個二極體(Diode)、多個電阻、多個電容元件或上述多種元件的電子元件的組合。請參照圖4、圖5與圖6,於本實施例中,靜電防護元件ESD包括多個薄膜電晶體T。The electrostatic protection component ESD is an electronic component used to provide an electrostatic discharge path. The electrostatic protection element ESD may be multiple thin film transistors T (Transistor thin film, TFT), multiple diodes (Diode), multiple resistors, multiple capacitive elements, or a combination of the above multiple electronic elements. Please refer to FIG. 4, FIG. 5 and FIG. 6, in this embodiment, the electrostatic protection device ESD includes a plurality of thin film transistors T.
分流元件DE係指在三維空間內將電流以不同方向進行分流的導電分流結構。於本實施例中,分流元件140為導電貫孔。The shunt element DE refers to a conductive shunt structure that shunts current in different directions in a three-dimensional space. In this embodiment, the
於以下的段落中會介紹顯示裝置100剖面的具體架構。The specific structure of the cross-section of the
圖4示出的是如圖3中電源接墊152至子畫素PX之間的剖面。圖5示出的是如圖3中訊號接墊154至子畫素PX之間的剖面。圖4與圖5的剖面大體上類似,但仍有些許差異。FIG. 4 shows the cross section from the
首先,先介紹圖4與圖5相似之處。First, first introduce the similarities between Figure 4 and Figure 5.
請參照圖4與圖5,於本實施例中,基板110更包括基材SB、多層金屬層M以及多層絕緣層I。基材SB包括相對的第一表面S1與第二表面S2。第一表面S1朝向顯示側DS。第二表面S2朝向背側BS。這些金屬層M例如包括第一至第三金屬層M1~M3。這些絕緣層I例如包括第一至第五絕緣層I1~I5。這些金屬層M與這些絕緣層I依序堆疊於基材SB的第一表面S1上,且這些絕緣層I例如分別設有對應的貫孔,以使對應的金屬層M灌入於貫孔中而於基板110內形成多個導電貫孔(未示出),以使電流能於層與層之間流動。4 and 5, in this embodiment, the
請再參照圖4與圖5,子畫素PX包括微型發光元件E、開關元件(未示出於圖4與圖5)以及驅動元件TD
。於本實施例中,微型發光元件E例如是微型發光二極體(Micro LED)或次毫米發光二極體(Mini LED),其包括磊晶層EPL以及與磊晶層EPL電性連接的第一、第二電極E1、E2。驅動元件TD
包括閘極GD
、通道層CD
、源極SD
與汲極DD
。另一方面,靜電防護元件ESD的薄膜電晶體T埋設於基板110內。薄膜電晶體T包括閘極GT
、通道層CT
、源極ST
與汲極DT
。第一金屬層M1貫穿第一、第二絕緣層I1、I2,並作為驅動元件TD
與薄膜電晶體T的閘極GT
、源極ST
與汲極DT
。第二、第三金屬層M2、M3分別灌入於第三至第五絕緣層I3~I5之間的貫孔而形成在微型發光元件E與驅動元件TD
之間的多個導電貫孔。此外,於金屬層M3與第一、第二電極E1、E2之間可增設透明導電層TCO,以助於導電。4 and 5 again, the sub-pixel PX includes a micro light emitting element E, a switching element (not shown in FIGS. 4 and 5), and a driving element T D. In this embodiment, the micro light emitting element E is, for example, a micro light emitting diode (Micro LED) or a sub-millimeter light emitting diode (Mini LED), which includes an epitaxial layer EPL and a second layer electrically connected to the epitaxial layer EPL. 1. The second electrodes E1 and E2. The drive element comprises a gate T D G D, the channel layer C D, the source and drain electrodes S D D D. On the other hand, the thin film transistor T of the electrostatic protection device ESD is embedded in the
接著,說明圖4與圖5之間的差異。Next, the difference between FIG. 4 and FIG. 5 will be explained.
在圖4中,第二金屬層M2分為兩方向延伸。第二金屬層M2的一部分大體上沿著方向D2延伸,並貫穿局部的第三絕緣層I3後形成分流元件DE(導電貫孔)並再延伸至基板110的側邊SE處。在基板110的側邊SE處,第一金屬層M1與電源接墊152分設於第二金屬層M2的兩側,第二金屬層M2與第一金屬層M1與電源接墊152兩者形成電接觸。另一方面,在圖4中,第二金屬層M2的另一部分沿方向D3的反方向貫穿局部的第三絕緣層I3後與薄膜電晶體T的源極ST
形成電接觸。於本發明的實施例中,所謂的「元件A與元件B之間形成電接觸」係指元件A與元件B電性連接,且互相接觸之意。In FIG. 4, the second metal layer M2 extends in two directions. A part of the second metal layer M2 extends substantially along the direction D2, penetrates a part of the third insulating layer I3 to form a shunt element DE (conductive through hole) and then extends to the side SE of the
此外,電源接墊152可藉由側導線SW以與設置於第二表面S2的電源供應器140電性連接。並且,側導線SW與電源接墊152之間可設有透明導電層TCO,以助於導電。In addition, the
圖5大致類似於圖4,其主要差異在於:第二金屬層M2並未與薄膜電晶體T的源極ST
形成電接觸。並且,訊號接墊154(第一訊號接墊154a或第二訊號接墊154b)亦可藉由類似於圖4的側導線SW以與設置於第二表面S2的閘極驅動電路120或資料驅動電路130電性連接。FIG. 5 is substantially similar to Figure 4, the main difference is that: a second metal layer M2 is not the source electrode of the thin film transistor T S T electrical contact. In addition, the signal pad 154 (the
於以下的段落中會大致介紹顯示裝置100中的走線佈局方式。In the following paragraphs, the wiring layout of the
請參照圖3,這些第一訊號線SL1與這些第二訊號線SL2於基板110上交錯設置。每一個顯示單元DU藉由對應的第一訊號線SL1與對應的第一訊號接墊154a電性連接,且藉由對應的第二訊號線SL2與對應的第二訊號接墊154b電性連接。因此,閘極驅動電路120與資料驅動電路130可分別傳送閘極訊號與資料訊號來驅動這些顯示單元DU以顯示影像畫面。應注意的是,為求清楚繪示,在兩電源線PSL之間的各顯示單元DU亦有第一、第二訊號線SL1、SL2連接,但於圖3省略示出在任二電源接墊152之間的訊號線SL。Please refer to FIG. 3, the first signal lines SL1 and the second signal lines SL2 are alternately arranged on the
請再參照圖3,在這些分流元件DE中,最靠近這些電源接墊152的分流元件DE’藉由一旁通路徑BPL與對應的電源接墊152連通。此旁通路徑BPL繞過至少一顯示單元DU。更具體來說,旁通路徑BPL的至少一部分的一側設有顯示單元DU,而此部分的另一側則不設有顯示單元DU。Referring to FIG. 3 again, among the shunt elements DE, the shunt element DE' closest to the
承上述,在本實施例的顯示裝置100中,電源接墊152可由旁通路徑BPL先傳遞電流至最靠近電源接墊152的分流元件DE’,分流元件DE’再進行分流並藉由電源線PSL將電流傳遞至其鄰近的顯示單元DU與其他的分流元件DE,以提供電流給整個顯示區DR內的這些顯示單元DU。由於旁通路徑BPL繞過顯示單元DU,因此旁通路徑BPL的走線寬度可設計的較寛,其電流承載能力較佳,且電阻較低,可有效地降低顯示裝置100內的內阻效應。In view of the above, in the
接著,介紹顯示裝置100中的電路佈局方式。Next, the circuit layout method in the
於本實施例中,靜電防護元件ESD包括多個薄膜電晶體T,且例如是包括第一至第六薄膜電晶體T1~T6。為求簡要示意,於圖6中,藉由圖式中之連接方式,當靜電脈衝電流(ESD pulse)傳入時,這些薄膜電晶體T就會如同產生二p-n接面的二極體元件(p-n junction diode elements)的功效。於本發明實施例中所稱的薄膜電晶體T的正端與負端係指薄膜電晶體T等效於二極體後,二極體所具有的正端與負端。In this embodiment, the electrostatic protection device ESD includes a plurality of thin film transistors T, and for example, includes first to sixth thin film transistors T1 to T6. For a brief illustration, in Figure 6, through the connection method in the diagram, when an ESD pulse is introduced, these thin film transistors T will be like a diode element with two pn junctions ( pn junction diode elements). In the embodiment of the present invention, the positive and negative ends of the thin film transistor T refer to the positive and negative ends of the thin film transistor T after the diode is equivalent to a diode.
具體來說,第二薄膜電晶體T2、第三薄膜電晶體T3與第五薄膜電晶體T5的多個負端電性連接於第一電位ESD_VH 。第一薄膜電晶體T1、第三薄膜電晶體T3與第四薄膜電晶體T4的多個正端電性連接於第二電位ESD_VL 。第二電位ESD_VL 低於第一電位ESD_VH 。第二薄膜電晶體T2的正端與第一薄膜電晶體T1的一負端電性連接於一訊號線SL(例如是第一訊號線SL1)。第四薄膜電晶體T4的一負端與第五薄膜電晶體T5的一正端電性連接於一電源線PSL。Specifically, the multiple negative terminals of the second thin film transistor T2, the third thin film transistor T3, and the fifth thin film transistor T5 are electrically connected to the first potential ESD_V H. The multiple positive terminals of the first thin film transistor T1, the third thin film transistor T3, and the fourth thin film transistor T4 are electrically connected to the second potential ESD_V L. The second potential ESD_V L is lower than the first potential ESD_V H. The positive terminal of the second thin film transistor T2 and a negative terminal of the first thin film transistor T1 are electrically connected to a signal line SL (for example, the first signal line SL1). A negative terminal of the fourth thin film transistor T4 and a positive terminal of the fifth thin film transistor T5 are electrically connected to a power line PSL.
當一靜電脈衝電流Iesd
被突然地施加於第一訊號線SL1時,靜電脈衝電流Iesd
依序經過第二薄膜電晶體T2、具有第一電位ESD_VH
的一走線,並使第三薄膜電晶體T3崩潰(Breakdown)、具有第二電位ESD_VL
的另一走線、經過第四薄膜電晶體T4。接著再經由電源線PSL傳遞至電容Cs。據此,靜電防護元件ESD可防止靜電損傷顯示裝置100內其他的電子元件。應注意的是,以上只是簡要地說明靜電防護元件ESD的一種靜電宣洩路徑,本發明並不以此為限制。因此,靜電防護元件ESD可防止靜電損傷顯示裝置100內其他的電子元件。When an electrostatic pulse current I esd is suddenly applied to the first signal line SL1, the electrostatic pulse current I esd sequentially passes through the second thin film transistor T2, a trace with the first potential ESD_V H , and causes the third thin film transistor T3 crash (Breakdown), having a second potential trace to another ESD_V L, through the fourth thin film transistor T4. Then it is transferred to the capacitor Cs via the power line PSL. Accordingly, the electrostatic protection device ESD can prevent electrostatic damage to other electronic components in the
於以下的段落中會大致地介紹顯示裝置100中的作動方式。In the following paragraphs, the operation mode of the
請參照圖3並搭配圖6,圖6內已具體地示出子畫素PIX內的微型發光元件E、開關元件TS 與驅動元件TD ,且開關元件TS 與驅動元件TD 個別的閘極GS 、GD 、源極SS 、SD 與汲極DS 、DD 皆已示出。開關元件TS 之汲極DS 電性連接於驅動元件TD 的閘極GD 。開關元件TS 之源極SS 電性連接於第一訊號線SL1而接收資料訊號。開關元件TS 之閘極GS 電性連接於第二訊號線SL2而接收閘極訊號。驅動元件TD 之源極SD 電性連接於分流元件DE’、電源線PSL與旁通路徑BPL。驅動元件TD 之汲極DD 電性連接於微型發光元件E。驅動元件TD 驅動微型發光元件E,微型發光元件E對應發出光束,以使子畫素PX顯示出對應的光束,而使整個顯示區DR內的這些顯示單元DU顯示影像畫面。Please refer to FIG. 3 in conjunction with FIG. 6. FIG. 6 has specifically shown the micro light emitting element E, the switching element T S and the driving element T D in the sub-pixel PIX, and the switching element T S and the driving element T D are separate gate G S, G D, a source S S, S D and drain D S, D D have switched shown. The drain D S of the switching element T S is electrically connected to the gate G D of the driving element T D. The source S S of the switching element T S is electrically connected to the first signal line SL1 to receive the data signal. The gate G S of the switching element T S is electrically connected to the second signal line SL2 to receive the gate signal. Source driving element T D S D of the electrode is electrically connected to the shunt element DE ', the power supply line PSL and the bypass path BPL. Drain D D T D is electrically driving element is connected to the micro light-emitting element E. Driving the drive element T D micro light-emitting element E, micro light-emitting element emits a light beam corresponding to E, so that the corresponding sub-pixels PX display light beam, so that the entire display area of the display unit DU DR within a display image screen.
請再參照圖4與圖6,電源供應器140所提供的電流可從電源接墊152進入顯示區DR內,並先經過分流元件DE’後,並主要在第二金屬層M2內進行平面式的電流分佈,其中平面為由方向D1、D2所構成的平面,而較不需要經過層與層之間的導電貫孔,由於層與層間的導電貫孔具有較高的阻抗,本實施例的顯示裝置100大幅地降低了電流於層與層之間傳遞的機率,因此本實施例的顯示裝置100具有較低的內阻。4 and FIG. 6 again, the current provided by the
請再參照圖5與圖6,閘極驅動電路120或資料驅動電路130所提供的訊號可從第一、第二訊號接墊154a、154b進入顯示區DR內,並主要在第一金屬層M1傳遞訊號。5 and 6, the signal provided by the gate driving circuit 120 or the data driving circuit 130 can enter the display area DR from the first and
在此必須說明的是,以下的實施例沿用上述實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。It must be noted here that the following embodiments use the element numbers and part of the content of the above embodiments, wherein the same or similar numbers are used to represent the same or similar elements, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, which will not be repeated here.
圖7為本發明另一實施例的顯示裝置的上視示意圖。圖8為圖7中的區域B的放大示意圖。圖9為圖8中剖線C-C’的剖面示意圖。圖10為圖8中剖線D-D’的剖面示意圖。圖11為圖8的顯示裝置的局部電路圖。FIG. 7 is a schematic top view of a display device according to another embodiment of the invention. FIG. 8 is an enlarged schematic diagram of area B in FIG. 7. Fig. 9 is a schematic cross-sectional view of the section line C-C' in Fig. 8. Fig. 10 is a schematic cross-sectional view taken along the line D-D' in Fig. 8. FIG. 11 is a partial circuit diagram of the display device of FIG. 8.
請參照圖7與圖8,顯示裝置100a大致類似於顯示裝置100,其主要差異在於:顯示裝置100a的佈局方式與架構與顯示裝置100稍有不同。詳言之,請先參照圖7,電源接墊152包括至少一電源輸入接墊152I與至少一電源輸出接墊152O(分別皆以兩個為範例,但不以此為限)。這些電源輸入接墊152I與這些電源輸出接墊152O設置於二訊號接墊154a之間。並且,最靠近這些電源接墊152的二分流元件DE’分別藉由二旁通路徑BPL延伸至側邊SE,並再藉由位於側邊的走線連接至電源接墊152。Referring to FIGS. 7 and 8, the
圖9示出的是電源輸入接墊152I至子畫素PX之間的剖面。圖10示出的是電源輸出接墊152O至子畫素PX之間的剖面。FIG. 9 shows a cross section between the
請先參照圖9,於本實施例中,基板110a大致上類似於圖4的基板110,其主要差異在於:第三絕緣層I3設有多個貫孔,以供第二金屬層M2灌入形成多個導電貫孔,其中第二金屬層M2與驅動元件TD
的源極SD
與汲極DD
電接觸,且與靜電防護元件ESD的薄膜電晶體T的源極ST
電性連接。並且,第三金屬層M3與電源輸入接墊152I電性連接。Please refer to FIG. 9 first. In this embodiment, the
在圖10大致類似於圖9,其主要差異在於:其剖面架構略有不同,具體而言:第四絕緣層I4設有多個貫孔,以供第三金屬層M3灌入形成多個導電貫孔,以使第三金屬層M3與第二金屬層M2電性連接,因此第三金屬層M3可藉由第二金屬層M2與靜電防護元件ESD的薄膜電晶體T的源極ST 電性連接。並且,第三金屬層M3與電源輸出接墊152O電性連接。Figure 10 is roughly similar to Figure 9, the main difference is: the cross-sectional structure is slightly different, specifically: the fourth insulating layer I4 is provided with multiple through holes for the third metal layer M3 to fill in to form multiple conductive through hole, so that the third metal layer M3 M2 is electrically connected to the second metal layer, the third metal layer M3 may be the source of the second metal layer M2 by the thin film transistor T is the source ESD electrostatic protection element electrically S T Sexual connection. In addition, the third metal layer M3 is electrically connected to the power output pad 152O.
此外,在本實施例中,關於訊號接墊154至子畫素PX之間的剖面大致上與圖5相似,於此不再贅述。In addition, in this embodiment, the cross-section between the
於以下的段落中會大致介紹顯示裝置100a中的電路佈局方式。In the following paragraphs, the circuit layout of the
請參照圖11,顯示裝置100a中的電路佈局大致類似於顯示裝置100中的電路佈局,其主要差異在於:電源輸入接墊152I與電源輸出接墊152O分別藉由二不同的旁通路徑BPL來與對應最靠近的分流元件DE’連接。11, the circuit layout in the
請再參照圖9與圖11,電源供應器140所提供的電流可從電源輸入接墊152I進入顯示區DR內,並先經過分流元件DE’後,並主要在第三金屬層M2內進行平面式的電流分佈,其中平面為由方向D1、D2所構成的平面,而不需經過較多的貫孔,因此本實施例的顯示裝置100a具有較低的內阻。9 and FIG. 11 again, the current provided by the
請參照圖10與圖11,接續圖9,當電流經過微型發光元件E後會再經由第三金屬層M3以及電源輸出接墊152O而導出顯示區DR。Please refer to FIG. 10 and FIG. 11, continuing from FIG. 9, when the current passes through the micro light emitting element E, the display area DR is derived through the third metal layer M3 and the power output pad 152O.
因此,於本實施例中,圖9中示出的電源輸入接墊152I至顯示單元DU的驅動元件TD
的電流路徑為一電流輸入路徑。圖10中示出的顯示單元DU的微型發光元件E至電源輸出接墊152O的電流路徑為一電流輸出路徑。電流輸入路徑與電流輸出路徑分別位於基板110a內的不同金屬層M2、M3。Accordingly, in the present embodiment, FIG. 9 shows the power input pads to the
綜上所述,在本發明實施例的顯示裝置中,電源接墊可由旁通路徑先傳遞電流至最靠近電源接墊的分流元件,最靠近電源接墊的分流元件再進行分流並藉由電源線將電流傳遞至其鄰近的顯示單元與其他的分流元件,以提供電流給整個顯示區內的這些顯示單元。由於旁通路徑繞過顯示單元,因此旁通路徑的走線寬度可設計的較寛,其電流承載能力較佳,且電阻較低,可有效地降低顯示裝置內的內阻效應。To sum up, in the display device of the embodiment of the present invention, the power pad can first transfer current through the bypass path to the shunt component closest to the power pad, and the shunt component closest to the power pad then shunts the current through the power supply. The wire transfers current to its neighboring display units and other shunt elements to provide current to these display units in the entire display area. Since the bypass path bypasses the display unit, the trace width of the bypass path can be designed to be wider, its current carrying capacity is better, and the resistance is lower, which can effectively reduce the internal resistance effect in the display device.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above by the embodiments, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.
100、100a:顯示裝置110、110a:基板120:閘極驅動電路130:資料驅動電路140:電源供應器150:接墊152:電源接墊152I:電源輸入接墊152O:電源輸出接墊154:訊號接墊154a:第一訊號接墊154b:第二訊號接墊A、B:區域A-A’、B-B’、C-C’、D-D’:剖線BS:背側BPL:旁通路徑CD、CT:通道層CS:電容D1~D3:方向DR:顯示區DS:顯示側DE、DE’:分流元件DD、DT、DS:汲極DU:顯示單元E1:第一電極E2:第二電極E:微型發光元件EPL:磊晶層ESD:靜電防護元件ESD_VH:第一電位ESD_VL:第二電位GD、GT、GS:閘極I:絕緣層I1:第一絕緣層I2:第二絕緣層I3:第三絕緣層I4:第四絕緣層I5:第五絕緣層M:金屬層M1:第一金屬層M2:第二金屬層M3:第三金屬層PX:子畫素PSL:電源線SD、ST:源極S1:第一表面S2:第二表面SB:基材SE:側邊SL:訊號線SL1:第一訊號線SL2:第二訊號線T:薄膜電晶體T1:第一薄膜電晶體T2:第二薄膜電晶體T3:第三薄膜電晶體T4:第四薄膜電晶體T5:第五薄膜電晶體T6:第六薄膜電晶體TD:驅動元件TS:開關元件TCO:透明導電層100, 100a: display device 110, 110a: substrate 120: gate drive circuit 130: data drive circuit 140: power supply 150: pad 152: power pad 152I: power input pad 152O: power output pad 154: Signal pad 154a: first signal pad 154b: second signal pad A, B: area A-A', B-B', C-C', D-D': cut line BS: back side BPL: Bypass path C D , C T : channel layer C S : capacitance D1~D3: direction DR: display area DS: display side DE, DE': shunt element D D , D T , D S : drain DU: display unit E1: a first electrode E2: the second electrode E: micro light-emitting element EPL: epitaxial layer ESD: electrostatic protection element ESD_V H: a first potential ESD_V L: the second potential G D, G T, G S : gate I: Insulating layer I1: first insulating layer I2: second insulating layer I3: third insulating layer I4: fourth insulating layer I5: fifth insulating layer M: metal layer M1: first metal layer M2: second metal layer M3: The third metal layer PX: subpixel PSL: the power cord S D, S T: source S1: a first surface S2: second surface SB: base SE: side SL: signal lines SL1: the first signal line SL2 : Second signal line T: thin film transistor T1: first thin film transistor T2: second thin film transistor T3: third thin film transistor T4: fourth thin film transistor T5: fifth thin film transistor T6: sixth thin film Transistor T D : Driving element T S : Switching element TCO: Transparent conductive layer
圖1為本發明一實施例的一種顯示裝置的上視示意圖。 圖2為圖1的顯示裝置的側視圖。 圖3為圖1中的區域A的放大示意圖。 圖4為圖3中剖線A-A’的剖面示意圖。 圖5為圖3中剖線B-B’的剖面示意圖。 圖6為圖1的顯示裝置的局部電路圖。 圖7為本發明另一實施例的顯示裝置的上視示意圖。 圖8為圖7中的區域B的放大示意圖。 圖9為圖8中剖線C-C’的剖面示意圖。 圖10為圖8中剖線D-D’的剖面示意圖。 圖11為圖8的顯示裝置的局部電路圖。FIG. 1 is a schematic top view of a display device according to an embodiment of the invention. Fig. 2 is a side view of the display device of Fig. 1. FIG. 3 is an enlarged schematic diagram of area A in FIG. 1. Fig. 4 is a schematic cross-sectional view of the section line A-A' in Fig. 3. Fig. 5 is a schematic cross-sectional view taken along line B-B' in Fig. 3. Fig. 6 is a partial circuit diagram of the display device of Fig. 1. FIG. 7 is a schematic top view of a display device according to another embodiment of the invention. FIG. 8 is an enlarged schematic diagram of area B in FIG. 7. Fig. 9 is a schematic cross-sectional view of the section line C-C' in Fig. 8. Fig. 10 is a schematic cross-sectional view taken along the line D-D' in Fig. 8. FIG. 11 is a partial circuit diagram of the display device of FIG. 8.
110:基板 110: substrate
150:接墊 150: pad
152:電源接墊 152: Power supply pad
154:訊號接墊 154: signal pad
154a:第一訊號接墊 154a: The first signal pad
A:區域 A: area
BPL:旁通路徑 BPL: Bypass path
D1~D3:方向 D1~D3: Direction
DR:顯示區 DR: display area
DE、DE’:分流元件 DE, DE’: shunt element
DU:顯示單元 DU: display unit
ESD:靜電防護元件 ESD: Electrostatic protection components
PX:子畫素 PX: Sub-pixel
PSL:電源線 PSL: Power cord
S1:第一表面 S1: First surface
SL:訊號線 SL: signal line
SE:側邊 SE: side
SL1:第一訊號線 SL1: The first signal line
SL2:第二訊號線 SL2: Second signal line
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