[go: up one dir, main page]

TW201946725A - Polishing pad and polishing method using the polishing pad - Google Patents

Polishing pad and polishing method using the polishing pad Download PDF

Info

Publication number
TW201946725A
TW201946725A TW108113809A TW108113809A TW201946725A TW 201946725 A TW201946725 A TW 201946725A TW 108113809 A TW108113809 A TW 108113809A TW 108113809 A TW108113809 A TW 108113809A TW 201946725 A TW201946725 A TW 201946725A
Authority
TW
Taiwan
Prior art keywords
polishing
polishing pad
adsorption layer
shielding member
platform
Prior art date
Application number
TW108113809A
Other languages
Chinese (zh)
Inventor
矢島利康
二宮大輔
Original Assignee
日商丸石產業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商丸石產業股份有限公司 filed Critical 日商丸石產業股份有限公司
Publication of TW201946725A publication Critical patent/TW201946725A/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention is related to a polishing pad provided with an adsorption layer made of a predetermined silicone composition, which is hard to fall away from a surface plate during a polishing operation. More specifically, it is a polishing pad composed of a substrate, an adsorption layer formed on the substrate, and a polishing layer. The adsorption layer is made of a composition obtained by crosslinking at least one silicone selected from a silicone containing a linear polyorganosiloxane having a vinyl group only at both ends and the likes. The polishing pad is characterized by a ring-shaped shield member provided on the adsorption layer along an outer periphery of the polishing pad. The polishing pad is used with a polishing slurry being supplied onto a polishing layer in a state where the adsorption material is adsorbed and fixed to a surface plate during a polishing operation. The ring-shaped shield member suppresses the polishing slurry from penetrating into an interface between the adsorption layer and the surface plate.

Description

研磨墊及以該研磨墊進行的研磨方法    Polishing pad and polishing method using the same   

本發明係關於在半導體零件、電子零件等所用的被研磨構件之研磨步驟中所使用的研磨墊。尤其是關於在半導體晶圓等的被研磨構件之研磨加工中可有效率地進行研磨墊的更換作業並且可防止研磨墊在研磨作業中偏移及剝離的研磨墊。 The present invention relates to a polishing pad used in a polishing step of a member to be polished used in semiconductor parts, electronic parts, and the like. In particular, the present invention relates to a polishing pad that can efficiently perform a replacement operation of a polishing pad during polishing processing of a member to be polished such as a semiconductor wafer, and can prevent the polishing pad from shifting and peeling during the polishing operation.

在半導體晶圓、顯示器用玻璃基板、硬碟用基板等半導體零件、電子零件的製造過程中,包含用以使基板等的表面平坦化或鏡面化的研磨步驟。研磨步驟係藉由下述方法進行:將研磨墊固定於研磨裝置的平台,一邊對於研磨墊的研磨層表面供應研磨漿液,一邊在加壓狀態下使被研磨構件與研磨墊滑動。 The manufacturing process of semiconductor components such as semiconductor wafers, glass substrates for displays, and substrates for hard disks and electronic components includes a polishing step for flattening or mirror-finishing the surface of a substrate or the like. The polishing step is performed by fixing a polishing pad to a platform of a polishing apparatus, and while supplying a polishing slurry to the surface of the polishing layer of the polishing pad, sliding the member to be polished and the polishing pad under a pressurized state.

關於將研磨墊固定於平台的方法,以往係以使用黏著膠帶等黏著材料的方法為主流,但該固定方法中,研磨墊的更換、固定作業手續繁雜,大幅降低研磨步驟的作業效率。對於固定該研磨墊的問題,已開發了一種可輕易進行固定、更換作業的研磨墊(專利文獻1、2)。 As for a method of fixing the polishing pad to the platform, a method using an adhesive material such as an adhesive tape has been the mainstream in the past. However, in this fixing method, the procedures for replacing and fixing the polishing pad are complicated, and the working efficiency of the polishing step is greatly reduced. Regarding the problem of fixing the polishing pad, there has been developed a polishing pad that can be easily fixed and replaced (Patent Documents 1 and 2).

[先前技術文獻]     [Prior technical literature]     [專利文獻]     [Patent Literature]    

[專利文獻1]日本實用新案登錄第3166396號說明書 [Patent Document 1] Japanese Utility Model Registration No. 3166396

[專利文獻2]日本專利第5765858號說明書 [Patent Document 2] Japanese Patent No. 5765858

此具備吸附層的研磨墊之外觀係顯示於第6圖。該研磨墊係在支撐研磨層的基材之背面側設置由具有吸附作用的既定聚矽氧(silicone)化合物所構成的吸附層。構成該吸附層的聚矽氧化合物,無論是對於玻璃或金屬等材質皆具有吸附作用,其保持力亦佳。關於由該吸附所產生的保持力,可觀察到其剪力(shear force)(水平方向的固定強度)高但剝離力(垂直方向的固定強度)低的特性。該特性適用於將研磨墊固定於平台。這是因為在研磨作業中,研磨墊持續受到水平方向的應力,所以在剪力方面需要高保持力之故。關於垂直方向的保持力,由於研磨墊係被按壓於平台,故並不一定需要很大的保持力。此外,由該聚矽氧化合物所構成之吸附層的吸附效果係在研磨墊的面內為均勻,可從中心部至端部皆發揮均等的保持力。因此,可期待穩定的研磨作業。 The external appearance of this polishing pad provided with an adsorption layer is shown in FIG. 6. This polishing pad is provided with an adsorption layer made of a predetermined silicone compound having an adsorption function on the back surface side of a substrate supporting the polishing layer. The polysiloxane compound constituting the adsorption layer has an adsorption effect on materials such as glass or metal, and has a good holding force. Regarding the holding force due to the adsorption, a characteristic was observed in which the shear force (fixed strength in the horizontal direction) was high but the peeling force (fixed strength in the vertical direction) was low. This feature is suitable for fixing the polishing pad to the platform. This is because the polishing pad continuously receives horizontal stress during the polishing operation, and therefore requires a high holding force in terms of shear force. Regarding the holding force in the vertical direction, since the polishing pad is pressed against the platform, a large holding force is not necessarily required. In addition, the adsorption effect of the adsorption layer composed of the polysiloxane compound is uniform in the surface of the polishing pad, and it can exert an equal holding force from the center portion to the end portion. Therefore, a stable polishing operation can be expected.

另外,該研磨墊亦有可平順地固定於平台且可有效率地進行更換作業的優點。如上所述,研磨墊的吸附層,其剝離力比剪力低,因此,只要於垂直方向將研磨墊輕按壓在平台即可進行固定,亦可輕易進行裝卸。所以,本案申請人所提出的研磨墊,從提升研磨作業之效率化的觀點而言亦為有用。 In addition, the polishing pad has the advantages that it can be smoothly fixed to the platform and can be efficiently replaced. As described above, the adsorption layer of the polishing pad has a lower peeling force than the shear force. Therefore, as long as the polishing pad is gently pressed against the platform in the vertical direction, it can be fixed, and it can be easily mounted and dismounted. Therefore, the polishing pad proposed by the applicant of this case is also useful from the viewpoint of improving the efficiency of the polishing operation.

如上所述,本案申請人所提出之具備既定吸附層的研磨墊,其更換作業的便利性良好,且對於平台的固定能力亦為優良。然而,根據本案發明人等的研究,確認即使在使用這種有用的研磨墊的情況下,雖罕見但有時仍會因為進行研磨作業而發生研磨墊的偏移及部分剝離。該研磨墊的偏移及剝離,並不一定是因為研磨時間的長短或研磨墊的更換頻率而導致吸附層的劣化。此外,並非是經常發生的不良情況,幾乎在所有的研磨環境及條件中亦可沒有問題地進行研磨作業。但是,為了使該研磨墊更加普及,即使只有些微的可能性仍應排除剝離等的不良情況。 As mentioned above, the polishing pad provided by the applicant of the present case with a predetermined adsorption layer has good convenience in replacement and excellent fixing ability to the platform. However, according to the research by the inventors of the present application, it is confirmed that even when such a useful polishing pad is used, the polishing pad may be shifted or partially peeled off due to the polishing operation although it is rare. The deviation and peeling of the polishing pad are not necessarily caused by the deterioration of the adsorption layer due to the length of the polishing time or the frequency of replacement of the polishing pad. In addition, it is not a frequently occurring defect, and polishing operations can be performed without problems in almost all polishing environments and conditions. However, in order to make the polishing pad more popular, even if there is only a slight possibility, the troubles such as peeling should be ruled out.

本發明係鑒於以上的背景而完成,其係針對具有由既定聚矽氧組成物所構成之吸附層的研磨墊,提供一種能夠抑制從平台剝離之情形等的研磨墊。並且,亦揭示使用此研磨墊的研磨方法。 The present invention has been made in view of the above-mentioned background, and is directed to a polishing pad having an adsorption layer composed of a predetermined polysiloxane composition, and provides a polishing pad capable of suppressing the occurrence of peeling from a platform and the like. The polishing method using the polishing pad is also disclosed.

本案發明人等,為了上述目的,針對具備既定吸附層之研磨墊,研究關於在研磨作業中發生從平台剝離等的主要原因。結果發現研磨漿液有時會侵入研磨墊的吸附層與平台間的界面,可能因此而引起剝離等。研磨漿液係以「使包含膠質二氧化矽、氧化鋁、氧化鈰、鑽石等之磨粒分散於溶劑而成者」作為基本構成的懸浮液。經本案發明人等研究的結果,發現根據研磨漿液的構成、成分,而有使其對於研磨墊與平台間之界面的侵入性變大之情形。尤其發現經成分調整而黏性低的研磨漿液,其對於界面的侵入性變高。 In order to achieve the above-mentioned object, the inventors of the present invention have studied the cause of peeling from the platen and the like during a polishing operation with respect to a polishing pad having a predetermined adsorption layer. As a result, it was found that the polishing slurry sometimes penetrated into the interface between the adsorption layer of the polishing pad and the platen, which may cause peeling and the like. The polishing slurry is a suspension composed of "a dispersion of abrasive particles containing colloidal silica, alumina, cerium oxide, diamond, etc. in a solvent" as a basic structure. As a result of studies conducted by the inventors of the present case, it was found that the invasiveness of the polishing slurry to the interface between the polishing pad and the platform may increase depending on the composition and composition of the polishing slurry. In particular, it has been found that a polishing slurry having a low viscosity after adjusting the composition has high invasiveness to an interface.

黏性低的研磨漿液,係搭配由研磨墊與平台之間的微細間隙所造成的毛細管現象之影響,較容易侵入界面。此外,漿液蓄積於界面的狀態,係對於由聚矽氧組成物所構成之吸附層而言為不佳的狀態,其會導致吸附力降低。因為該吸附力降低,而導致研磨墊從平台剝離或偏移。 The low-viscosity abrasive slurry is more easily penetrated into the interface due to the capillary effect caused by the fine gap between the polishing pad and the platform. In addition, the state where the slurry is accumulated at the interface is in a poor state for an adsorption layer composed of a polysiloxane composition, which causes a decrease in the adsorption force. Because the adsorption force is reduced, the polishing pad is peeled off or shifted from the platform.

然而,即使研磨墊之吸附層能力降低的主要原因在於研磨漿液,亦難以輕易地改變其成分、構成。構成研磨漿液的磨粒及溶劑等的成分、構成,一般係根據被研磨構件之材質以及所要求的研磨精度等而經最佳化。就算研磨漿液可能會影響特定研磨墊,也無法輕易允許會影響研磨精度等的變更之實施。 However, even if the main reason for the decrease in the capacity of the adsorption layer of the polishing pad is the polishing slurry, it is difficult to easily change its composition and structure. The components and structure of the abrasive grains and the solvent constituting the polishing slurry are generally optimized according to the material of the member to be polished, the required polishing accuracy, and the like. Even if the polishing slurry may affect a specific polishing pad, it is not easy to allow the implementation of changes that affect polishing accuracy and the like.

於是,本案發明人等藉由改良研磨墊的構成,而解決從平台剝離等的問題。具體而言,為了抑制研磨漿液侵入研磨墊的吸附層與平台間的界面,而在作為研磨墊背面的吸附層表面上配置屏蔽構件。 Then, the inventors of the present invention solved the problems such as peeling from the platform by improving the structure of the polishing pad. Specifically, in order to prevent the polishing slurry from entering the interface between the adsorption layer and the platform of the polishing pad, a shielding member is disposed on the surface of the adsorption layer which is the back surface of the polishing pad.

亦即,本發明係一種研磨墊,其係由基材、形成於該基材之一面的吸附層、以及形成於該基材之另一面的研磨層所構成;其中,該研磨墊係在研磨作業時將該吸附層吸附、固定於平台並將研磨漿液供給至該研磨層上而使用者;該吸附層包含由選自下列聚矽氧中之至少1種聚矽氧所交聯成的組成物:包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷的聚矽氧、包含在兩末端及側鏈具有乙烯基之直鏈狀聚有機矽氧烷的聚矽氧、包含僅在末端具有乙烯基之分支狀聚有機矽氧烷的聚矽氧、以及包含在末端及側鏈具有乙烯基之分支狀聚有機矽氧烷的聚矽氧;並且,為了抑制該研磨漿液侵入該吸附層與該平台間之界面,而在吸附層上具備沿著研磨墊外周的環狀屏蔽構件。 That is, the present invention is a polishing pad, which is composed of a substrate, an adsorption layer formed on one surface of the substrate, and a polishing layer formed on the other surface of the substrate; wherein the polishing pad is formed during polishing During operation, the adsorption layer is adsorbed, fixed on the platform, and the grinding slurry is supplied to the grinding layer, and the user; the adsorption layer includes a composition composed of at least one polysilicone selected from the following polysilicones Product: Polysiloxane containing a linear polyorganosiloxane having a vinyl group only at both ends, polysiloxane containing a linear polyorganosiloxane having a vinyl group at both ends and side chains, containing polysiloxane A polysiloxane containing a branched polyorganosiloxane having a vinyl group at a terminal end, and a polysiloxane containing a branched polyorganosiloxane having a vinyl group at a terminal and side chain; The interface between the adsorption layer and the platform is provided with an annular shielding member along the outer periphery of the polishing pad on the adsorption layer.

以下詳細說明本發明之研磨墊。如上所述,本發明係與以往 技術(專利文獻1、2)相同地,是以基材與形成於基材表面及背面的研磨層及吸附層之組合作為基本構成。並且,其特徵係在吸附層表面具備沿著研磨墊外周的環狀屏蔽構件。 The polishing pad of the present invention will be described in detail below. As described above, the present invention is basically the same as the conventional technology (Patent Documents 1 and 2), in which a base material is combined with a polishing layer and an adsorption layer formed on the front and back surfaces of the base material. In addition, it is characterized in that an annular shielding member is provided on the surface of the adsorption layer along the outer periphery of the polishing pad.

第1圖係顯示將本發明之具備環狀屏蔽構件的研磨墊固定於平台之狀態的具體例的圖。從第1圖可得知,本發明之研磨墊,其直徑係設定為大於平台的外徑。此外,該研磨墊中,具有固定寬度與厚度的環狀屏蔽構件係接合於作為背面的吸附層之外緣。另外,在此例中,環狀屏蔽構件的內徑與平台的外徑大致相等。 FIG. 1 is a view showing a specific example of a state in which the polishing pad provided with the ring-shaped shielding member of the present invention is fixed to a stage. As can be seen from Fig. 1, the diameter of the polishing pad of the present invention is set larger than the outer diameter of the table. In this polishing pad, a ring-shaped shielding member having a fixed width and thickness is bonded to the outer edge of the adsorption layer as the back surface. In addition, in this example, the inner diameter of the ring-shaped shielding member is substantially equal to the outer diameter of the platform.

另外,在研磨作業中,一邊將研磨漿液供給至研磨層上,一邊使研磨墊旋轉。供給至研磨層表面的研磨漿液,如第2圖所示,因為離心力而高速往外周側展開潤濕,到達研磨墊的側面。此時,本發明的研磨墊中,與吸附層接合的屏蔽構件會阻擋研磨漿液,而防止漿液被捲入研磨墊的背面側。再者,因為在研磨作業時研磨墊高速旋轉,故被阻擋的研磨漿液會從環狀屏蔽構件往外側飛散。藉此,使研磨漿液無法侵入吸附層與平台間之界面,而維持吸附層的密合狀態。 In the polishing operation, the polishing pad is rotated while the polishing slurry is supplied onto the polishing layer. As shown in FIG. 2, the polishing slurry supplied to the surface of the polishing layer spreads and wets to the outer peripheral side at high speed due to centrifugal force, and reaches the side surface of the polishing pad. At this time, in the polishing pad of the present invention, the shielding member bonded to the adsorption layer blocks the polishing slurry and prevents the slurry from being caught on the back side of the polishing pad. Furthermore, since the polishing pad rotates at a high speed during the polishing operation, the blocked polishing slurry is scattered from the ring-shaped shielding member to the outside. This prevents the polishing slurry from intruding into the interface between the adsorption layer and the platform, and maintains the adhesion state of the adsorption layer.

如此,本發明之特徵係將研磨墊的直徑設為稍微大於平台,並且在成為寬幅部分的吸附層上設置環狀屏蔽構件。以下更詳細說明本發明之研磨墊以及使用該研磨墊的研磨方法。首先說明研磨墊的各個構成。 As described above, the present invention is characterized in that the diameter of the polishing pad is slightly larger than that of the stage, and a ring-shaped shielding member is provided on the adsorption layer which becomes a wide portion. Hereinafter, the polishing pad of the present invention and a polishing method using the polishing pad will be described in more detail. First, each structure of a polishing pad is demonstrated.

(A)本發明之研磨墊的構成 (A) Composition of the polishing pad of the present invention

本發明之研磨墊,係由基材、研磨層、吸附層、以及環狀屏蔽構件所構成。 The polishing pad of the present invention is composed of a base material, a polishing layer, an adsorption layer, and a ring-shaped shielding member.

(A-1)基材 (A-1) Substrate

基材係用以支撐研磨層及吸附層的構件,且為用以確保研磨墊之操作性的構件。基材係由薄的有機物所構成的圓形薄片狀構件。基材較佳係由 斷裂強度210至290MPa、斷裂伸度80至130%的樹脂材料所構成。更佳為斷裂強度210至240MPa、斷裂伸度110至130%。此外,該拉伸強度係在乾燥時所測量的值。 The substrate is a member for supporting the polishing layer and the adsorption layer, and is a member for ensuring the operability of the polishing pad. The substrate is a circular sheet-like member made of a thin organic substance. The substrate is preferably composed of a resin material having a breaking strength of 210 to 290 MPa and a breaking elongation of 80 to 130%. More preferably, the breaking strength is 210 to 240 MPa and the breaking elongation is 110 to 130%. The tensile strength is a value measured during drying.

基材的構成材料,具體而言為聚酯、聚乙烯、聚苯乙烯、聚丙烯、尼龍、胺基甲酸酯(urethane)、聚偏二氯乙烯(polyvinylidene chloride)、聚氯乙烯等樹脂。較佳為聚酯系樹脂材料,例如聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN),特佳為PET。基材可為單層,亦可由多種樹脂形成多層結構。 The constituent materials of the substrate are specifically resins such as polyester, polyethylene, polystyrene, polypropylene, nylon, urethane, polyvinylidene chloride, and polyvinyl chloride. Polyester resin materials such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN) are preferred, and PET is particularly preferred. The substrate may be a single layer, or a multilayer structure may be formed from a plurality of resins.

基材的形狀與尺寸,亦即研磨墊的形狀與尺寸可適用圓形或方形者。如上所述,本發明的研磨墊,係以使直徑大於平台之直徑的方式調整尺寸。如後所述,具體而言,相對於平台的直徑,較佳係多出10mm至50mm。平台的尺寸,可根據被研磨材的尺寸及同時研磨的數量而選擇任意的外徑。此外,研磨墊的直徑(最大徑)大多是設定於100mm至2000mm的範圍。 The shape and size of the substrate, that is, the shape and size of the polishing pad can be round or square. As described above, the polishing pad of the present invention is adjusted in size so that the diameter is larger than the diameter of the table. As described later, specifically, it is preferable that it is 10 mm to 50 mm more than the diameter of the platform. The size of the platform can be selected according to the size of the material to be ground and the number of simultaneous grinding. In addition, the diameter (maximum diameter) of the polishing pad is often set in the range of 100 mm to 2000 mm.

(A-2)研磨層 (A-2) Polished layer

研磨層如其名稱所示,係用以研磨被研磨構件的層。研磨層係適當保持所供給之研磨漿液,以對於被研磨構件表面進行研磨。本發明的研磨層可適用以往用於一般研磨墊的研磨布。例如,可適用由尼龍、聚胺基甲酸酯、聚對苯二甲酸乙二酯等所形成的不織布、發泡成形體等。此外,其表面(研磨面)的形狀不限於平坦狀,亦可適當地形成用以保持研磨劑的溝槽等。作為研磨層的研磨布,其厚度較佳為0.5至3mm。 The polishing layer is a layer for polishing a member to be polished, as its name indicates. The polishing layer holds the supplied polishing slurry appropriately to polish the surface of the member to be polished. The polishing layer of the present invention can be applied to a polishing cloth conventionally used for a general polishing pad. For example, a non-woven fabric made of nylon, polyurethane, polyethylene terephthalate, etc., a foamed molded body, and the like can be applied. In addition, the shape of the surface (polishing surface) is not limited to a flat shape, and a groove or the like for holding an abrasive may be appropriately formed. The polishing cloth as the polishing layer preferably has a thickness of 0.5 to 3 mm.

研磨層較佳係牢固地接合於基材。研磨層與基材之接合方法可採用習知的方法,較佳為例如藉由接著劑或黏著劑等而接合。 The polishing layer is preferably firmly bonded to the substrate. The polishing layer and the substrate may be joined by a conventional method, and preferably, for example, is joined by an adhesive or an adhesive.

(A-3)吸附層 (A-3) Adsorption layer

吸附層係藉由源自其構成材料的吸附作用而將研磨墊固定於平台的構件。如上所述,吸附層係由聚矽氧組成物所構成,基本上係與上述本案發明人等提出之以往的研磨墊(專利文獻1、2)中所使用者相同。亦即,構成吸附層的聚矽氧組成物,係由選自下列聚矽氧中之至少1種聚矽氧所交聯成的組成物:包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷的聚矽氧、包含在兩末端及側鏈具有乙烯基之直鏈狀聚有機矽氧烷的聚矽氧、包含僅在末端具有乙烯基之分支狀聚有機矽氧烷的聚矽氧、以及包含在末端及側鏈具有乙烯基之分支狀聚有機矽氧烷的聚矽氧。 An adsorption layer is a member which fixes a polishing pad to a platform by the adsorption | suction effect derived from the constituent material. As described above, the adsorption layer is composed of a polysiloxane composition, and is basically the same as that used in the conventional polishing pads (Patent Documents 1 and 2) proposed by the inventors of the present invention. That is, the polysiloxane composition constituting the adsorption layer is a composition composed of at least one polysiloxane selected from the following polysiloxanes: a linear polymer having a vinyl group only at both ends Polysiloxanes containing organosiloxanes, polysiloxanes containing linear polyorganosiloxanes having vinyl groups at both ends and side chains, polysiloxanes containing branched polyorganosiloxanes having vinyl groups only at the ends Siloxane, and polysiloxane containing branched polyorganosiloxanes having a vinyl group at the terminal and side chains.

上述聚矽氧的具體例,可列舉如化1之化合物以作為直鏈狀聚有機矽氧烷的例子。此外,可列舉如化2之化合物以作為分枝狀聚有機矽氧烷的例子。 Specific examples of the above-mentioned polysiloxane include a compound such as Chemical Formula 1 as an example of a linear polyorganosiloxane. In addition, a compound such as the compound 2 can be cited as an example of a branched polyorganosiloxane.

Figure TW201946725A_D0001
Figure TW201946725A_D0001

(式中,R表示下述有機基,n表示整數) (In the formula, R represents the following organic group, and n represents an integer.)

Figure TW201946725A_D0002
Figure TW201946725A_D0002

(式中,R表示下述有機基,m、n表示整數) (In the formula, R represents the following organic group, and m and n represent integers.)

化1、化2中之取代基(R)的具體例,可列舉如:甲基、乙基、丙基等烷基,苯基、甲苯基等芳基,或是此等基的碳原子所鍵結之氫原子的一部分或全部經鹵素原子、氰基等取代之同種或不同種的未取代或取代之脂肪族不飽和基除外的1價烴基。較佳係其至少50莫耳%為甲基者。取代基可為不同種亦可為同種。此外,此聚矽氧烷可單獨亦可為2種以上的混合物。 Specific examples of the substituent (R) in Chemical Formula 1 and Chemical Formula 2 include alkyl groups such as methyl, ethyl, and propyl, aryl groups such as phenyl and tolyl, or carbon atoms of these groups. Some or all of the bonded hydrogen atoms are substituted with halogen atoms, cyano groups, and the like, or unsubstituted or substituted aliphatic unsaturated groups of the same or different type, and are monovalent hydrocarbon groups. Preferably, at least 50 mole% is methyl. The substituents may be different or the same. The polysiloxane may be used alone or as a mixture of two or more.

構成吸附層的聚矽氧,其數量平均分子量若為30000至100000則具有適當的吸附作用。惟,調整表面粗度時,所使用之聚矽氧的數量平均分子量與製造段階之燒製溫度會造成影響。為了容易發揮適當的表面粗度,聚矽氧之數量平均分子量較佳為30000至60000。 The polysiloxane that constitutes the adsorption layer has a proper adsorption effect if the number average molecular weight is 30,000 to 100,000. However, when adjusting the surface roughness, the number average molecular weight of the polysilicon used and the firing temperature of the manufacturing stage will affect. In order to easily exhibit an appropriate surface roughness, the number average molecular weight of the polysiloxane is preferably 30,000 to 60,000.

吸附層的厚度較佳為20至50μm。此外,基材的厚度較佳為50至200μm。基材與吸附層較佳為緊密接合。 The thickness of the adsorption layer is preferably 20 to 50 μm. In addition, the thickness of the substrate is preferably 50 to 200 μm. The base material and the adsorption layer are preferably closely bonded.

吸附層可藉由在基材上塗布含有上述聚矽氧成分的塗布液並進行燒製而形成。藉由燒製而進行聚有機矽氧烷的交聯反應,在密合於 基材的狀態下形成吸附層。所使用之塗布液包含上述直鏈狀、分枝狀聚有機矽氧烷化合物與交聯劑。交聯劑可為習知者,可舉例如有機氫化聚矽氧烷。有機氫化聚矽氧烷係在1分子中具有至少3個與矽原子鍵結的氫原子,從實用上而言,較佳係將分子中具有2個≡SiH鍵者設為到總量的50重量%為止,並將剩餘部分設為分子中包含至少3個SiH鍵者。塗布液亦可包含在交聯反應中所使用的鉑系觸媒。塗布液可為無溶劑型、溶劑型、乳膠(emulsion)型的任一形態。塗布液塗布後的燒製,較佳係在120至180℃加熱60至150秒。 The adsorption layer can be formed by applying a coating liquid containing the above-mentioned polysiloxane component onto a substrate and firing it. The cross-linking reaction of the polyorganosiloxane is performed by firing to form an adsorption layer in a state of being closely adhered to the substrate. The coating liquid used includes the above-mentioned linear and branched polyorganosiloxane compound and a crosslinking agent. The cross-linking agent may be a conventional one, and may be, for example, an organic hydrogenated polysiloxane. The organic hydrogenated polysiloxane has at least 3 hydrogen atoms bonded to silicon atoms in one molecule. Practically, it is preferable to set the number of molecules having two ≡SiH bonds in the molecule to 50 in total. Up to 3% by weight, and the remainder is set to include at least 3 SiH bonds in the molecule. The coating liquid may contain a platinum-based catalyst used in the crosslinking reaction. The coating liquid may be in any form of a solventless type, a solvent type, and an emulsion type. The firing after the coating liquid is applied is preferably heated at 120 to 180 ° C for 60 to 150 seconds.

(A-4)環狀屏蔽構件 (A-4) Ring-shaped shielding member

如上所述,本發明之研磨墊之特徵係在吸附層的面上具備沿著研磨墊外周的環狀屏蔽構件。該屏蔽構件,係用以將研磨作業中所供給之研磨漿液阻擋在研磨墊的外周部分,而使研磨漿液不會侵入吸附層與平台間之界面者。 As described above, the polishing pad of the present invention is characterized by including an annular shielding member on the surface of the adsorption layer along the outer periphery of the polishing pad. The shielding member is used to block the polishing slurry supplied during the polishing operation to the outer peripheral portion of the polishing pad, so that the polishing slurry does not enter the interface between the adsorption layer and the platform.

屏蔽構件係具有固定的寬度與厚度的環狀形狀。其垂直方向的剖面形狀,基本上設為矩形(第3圖(a)),但亦可設為對於下端部的單側或兩側進行倒角的形狀(第3圖(b)至(d))。藉由進行倒角而形成傾斜,使研磨漿液從屏蔽構件的排液變得良好。屏蔽構件的下端部的倒角,可為直線狀的傾斜(錐狀)(第3圖(b)、(d)),亦可為曲線狀的傾斜(曲面)(第3圖(c))。此外,剖面形狀中,可為對於外側或內側(平台側)的一邊端部進行倒角,亦可為對於兩端部皆進行倒角。 The shield member has a ring shape having a fixed width and thickness. The cross-sectional shape in the vertical direction is basically rectangular (Figure 3 (a)), but it can also be chamfered on one or both sides of the lower end (Figures 3 (b) to (d) )). By performing the chamfering to form the inclination, the drainage of the polishing slurry from the shield member becomes favorable. The chamfer of the lower end portion of the shield member may be linearly inclined (tapered) (Figs. 3 (b) and (d)), or may be curved (curved) (Fig. 3 (c)). . In addition, the cross-sectional shape may be chamfered on one side end portion on the outer side or inner side (on the platform side), or may be chamfered on both end portions.

環狀屏蔽構件的寬度較佳係設為5mm以上。這是因為若為了阻擋研磨漿液使其不會到達平台,則需要某種程度的寬度之故。此外,環狀屏蔽構件的內徑必須大於平台的外徑。研磨墊係使吸附層與平台密合而使用者,因此,環狀屏蔽構件的寬度必須設為在研磨墊之半徑與平台之 半徑的差值以下。如後所述,研磨墊的直徑與平台的直徑之差值較佳係設為50mm以下,故環狀屏蔽構件的寬度較佳係設為25mm以下。此外,環狀屏蔽構件的內面,亦可與平台側面密合。此外,亦可不密合,而是在環狀屏蔽構件的內面與平台的側面之間產生間隙。 The width of the annular shield member is preferably 5 mm or more. This is because a certain degree of width is required in order to block the grinding slurry from reaching the platform. In addition, the inner diameter of the annular shielding member must be larger than the outer diameter of the platform. The polishing pad is designed so that the adsorption layer and the platform are in close contact with the user. Therefore, the width of the ring-shaped shielding member must be equal to or smaller than the difference between the radius of the polishing pad and the radius of the platform. As described later, the difference between the diameter of the polishing pad and the diameter of the stage is preferably set to 50 mm or less, so the width of the annular shield member is preferably set to 25 mm or less. In addition, the inner surface of the ring-shaped shielding member may be closely adhered to the side surface of the platform. In addition, a gap may be generated between the inner surface of the ring-shaped shielding member and the side surface of the platform instead of being tightly sealed.

另外,關於環狀屏蔽構件的厚度(高度),較佳係設為10mm至50mm。這是因為若為了阻擋研磨漿液使其不會到達平台,則需要適當的高度之故。 The thickness (height) of the ring-shaped shielding member is preferably 10 mm to 50 mm. This is because an appropriate height is required to prevent the grinding slurry from reaching the platform.

其次,說明環狀屏蔽構件的構成材料。本發明的環狀屏蔽構件,係用以將在研磨面的表面展開的研磨漿液擋住而使其不會到達研磨墊背面側之平台者。若考慮到此功能,可使用具有吸液性的材料作為屏蔽構件的材質。藉由具有吸水性的環狀屏蔽構件來吸收研磨漿液,有可有效地阻止研磨漿液到達平台的情況。 Next, constituent materials of the ring-shaped shielding member will be described. The annular shielding member of the present invention is used to block the polishing slurry spread on the surface of the polishing surface so that it does not reach the platform on the back side of the polishing pad. Taking this function into consideration, a liquid-absorbent material can be used as the material of the shielding member. The absorption of the polishing slurry by the ring-shaped shielding member having water absorption may effectively prevent the polishing slurry from reaching the platform.

不過,該屏蔽構件的吸水性若太高,則有從成為過度濕潤狀態的屏蔽構件滲出的漿液會被吸入平台之間隙的疑慮。此外,若大量吸收研磨漿液,環狀屏蔽構件的重量增大,則可能對於研磨墊的旋轉狀態有所影響。因此,當環狀屏蔽構件具備吸水性時,係要求設為適度的吸水性。具體而言,屏蔽構件較佳係在溫度20℃浸漬於水中1小時後之質量增加率(1小時吸水率)為60%重量以下者。 However, if the water absorption of the shielding member is too high, there is a concern that the slurry exuding from the shielding member in an excessively wet state may be sucked into the gap of the platform. In addition, if a large amount of polishing slurry is absorbed and the weight of the ring-shaped shielding member is increased, the rotation state of the polishing pad may be affected. Therefore, when the ring-shaped shielding member is provided with a water-absorbing property, it is required to be a moderate water-absorbing property. Specifically, the shielding member is preferably one having a mass increase rate (water absorption rate for 1 hour) of 60% by weight or less after being immersed in water at a temperature of 20 ° C for 1 hour.

惟,對於環狀屏蔽構件而言,吸水性並非必要的功能。這是因為若藉由如上所述般適當設定屏蔽構件的形狀及尺寸,即可有效地使研磨漿液飛散,而能夠達成目的之故。若考慮到由吸收研磨漿液而導致之質量增加,則亦有以屏蔽構件不具備吸水性為較佳的情況。因此,亦可由無吸水性的材料或吸水性低的材料來構成環狀屏蔽構件。在此情況下,可將屏蔽構件的1小時吸水率設為0%至1%以下。 However, water absorption is not a necessary function for the annular shielding member. This is because if the shape and size of the shield member are appropriately set as described above, the polishing slurry can be effectively scattered and the purpose can be achieved. In consideration of the increase in mass due to absorption of the polishing slurry, it may be preferable that the shielding member does not have water absorption. Therefore, the annular shielding member may be formed of a material having no water absorption or a material having low water absorption. In this case, the 1-hour water absorption of the shielding member may be set to 0% to 1%.

環狀屏蔽構件的構成材料,係可使用纖維素、橡膠(丁二烯橡膠、氯平橡膠等)、乙烯系樹脂(聚乙烯醇(PVA)、乙烯-乙酸乙烯酯(EVA)、氯乙烯(PVC)等)、苯乙烯系樹脂(聚苯乙烯(PS)等)、聚碳酸酯(PC)、氟樹脂(鐵氟龍(註冊商標):PTFE等)、聚胺基甲酸酯(PU)。可使用由該等材料所構成且具有纖維、不織布、發泡體、多孔質體、塊體(緻密體)之形態結構的屏蔽構件。 As the constituent materials of the ring-shaped shielding member, cellulose, rubber (butadiene rubber, chloroprene rubber, etc.), vinyl resin (polyvinyl alcohol (PVA), ethylene-vinyl acetate (EVA), vinyl chloride ( (PVC), etc.), styrene resin (polystyrene (PS), etc.), polycarbonate (PC), fluororesin (Teflon (registered trademark): PTFE, etc.), polyurethane (PU) . A shielding member composed of these materials and having a morphological structure of fibers, nonwoven fabrics, foams, porous bodies, and bulk (dense bodies) can be used.

環狀屏蔽構件較佳係牢固地接合於吸附層。這是因為,研磨漿液若侵入環狀屏蔽構件與吸附層間之界面,則具有發生屏蔽構件剝離的疑慮。因此,和研磨層與基材之接合或基材與吸附層之接合的情況相同,較佳係以接著劑或黏著劑等將屏蔽構件接合於吸附層。 The ring-shaped shielding member is preferably firmly bonded to the adsorption layer. This is because if the polishing slurry penetrates the interface between the annular shielding member and the adsorption layer, there is a concern that the shielding member peels off. Therefore, as in the case where the polishing layer is bonded to the substrate or the substrate is bonded to the adsorption layer, the shielding member is preferably bonded to the adsorption layer with an adhesive or an adhesive.

此外,亦可在屏蔽構件的表面上形成與吸附層相同之由聚矽氧組成物所構成之吸附層,並使其與研磨墊的吸附層接合。本發明中所使用之聚矽氧組成物係在同種材料之間發揮強力的接合力。此時,不僅是在水平方向,在垂直方向上亦可牢固地接合。只要是這種吸附層彼此之接合,即不會發生研磨漿液的侵入,可防止屏蔽構件的剝離。 In addition, an adsorption layer composed of a polysiloxane composition, which is the same as the adsorption layer, may be formed on the surface of the shielding member and bonded to the adsorption layer of the polishing pad. The polysiloxane composition used in the present invention exerts a strong bonding force between the same materials. At this time, not only the horizontal direction but also the vertical direction can be firmly joined. As long as the adsorption layers are bonded to each other, the intrusion of the polishing slurry does not occur, and peeling of the shielding member can be prevented.

B.使用本發明之研磨墊的研磨方法 B. Polishing method using the polishing pad of the present invention

繼而,說明使用本發明之研磨墊的研磨方法。本發明之研磨方法,其基本步驟係與使用以往之具有吸附層之研磨墊的方法為共通。亦即,將研磨墊吸附固定於平台,一邊供給研磨漿液一邊使研磨墊旋轉,同時將被研磨構件按壓於研磨墊,以進行研磨作業。將研磨墊載置於平台上,從研磨層側將研磨墊朝向平台方向按壓,藉此而完成研磨墊的固定。此時,不需要嚴謹地以均勻的力按壓整面,只要輕撫研磨層的表面並按壓,即可發揮吸附層的吸附作用。 Next, a polishing method using the polishing pad of the present invention will be described. The basic method of the polishing method of the present invention is the same as the method using a conventional polishing pad having an adsorption layer. That is, the polishing pad is adsorbed and fixed on the platform, the polishing pad is rotated while the polishing slurry is supplied, and the member to be polished is pressed against the polishing pad to perform the polishing operation. The polishing pad is placed on the platform, and the polishing pad is pressed toward the platform from the polishing layer side, thereby fixing the polishing pad. At this time, it is not necessary to press the entire surface with rigorous uniform force, as long as the surface of the polishing layer is lightly touched and pressed, the adsorption effect of the adsorption layer can be exerted.

本發明的研磨方法之特色係在於選定所使用之研磨墊的尺 寸。本發明中,使用直徑大於平台之直徑(外徑)的研磨墊。本發明之研磨墊中,因為係將沿著研磨墊外周的環狀屏蔽構件接合於吸附層,故必須使研磨墊的直徑平台達與其寬度相當的長度以上。研磨墊的直徑與平台的直徑之差值,較佳係設為10mm以上50mm以下。這是考慮到上述屏蔽構件之寬度的較佳值(5mm)而設定者。此外,若研磨墊過度大於平台,則旋轉動作會變得不穩定,而有在研磨墊表面產生歪曲或波動的疑慮。 The polishing method of the present invention is characterized by selecting the size of the polishing pad to be used. In the present invention, a polishing pad having a diameter larger than the diameter (outer diameter) of the stage is used. In the polishing pad of the present invention, since the annular shielding member along the outer periphery of the polishing pad is bonded to the adsorption layer, the diameter plateau of the polishing pad must be equal to or longer than its width. The difference between the diameter of the polishing pad and the diameter of the platen is preferably 10 mm or more and 50 mm or less. This is set in consideration of a preferable value (5 mm) of the width of the shielding member. In addition, if the polishing pad is excessively larger than the stage, the rotation operation becomes unstable, and there is a concern that distortion or fluctuation may occur on the polishing pad surface.

此外,如上所述,在將研磨墊固定於平台時,研磨墊的環狀屏蔽構件的側面與該平台的側面可接觸、密合,亦可互相隔開。 In addition, as described above, when the polishing pad is fixed to the platform, the side surface of the ring-shaped shielding member of the polishing pad and the side surface of the platform may be in contact with each other, or may be spaced apart from each other.

可在留意上述研磨墊的選定之同時,亦在將其吸附固定於平台之後進行一般的研磨作業。本發明中,作為對象的被研磨構件的材質、形狀、尺寸係完全無限制。 While paying attention to the selection of the above-mentioned polishing pads, general polishing operations can also be performed after they are fixed on the platform by adsorption. In the present invention, the material, shape, and size of the object to be polished are completely unlimited.

研磨作業中,係將研磨漿液供給至被研磨構件與研磨墊之間。在該研磨作業時所供給的研磨漿液的構成(磨粒的材質、粒徑、溶劑種類、漿液濃度等)或添加劑(界面活性劑、增黏劑等)的有無、種類並無限制。惟本發明對於使用低黏性之研磨漿液的研磨作業為特別有用。這是因為低黏性的研磨漿液容易入侵吸附層與平台間之接合界面之故。本發明為有效的研磨漿液係在20℃時的黏度為10mPa‧s以下的研磨漿液。此外,對於3mPa‧s以下的研磨漿液亦有效,對於1.5mPa‧s以下的研磨漿液亦有用。即使為0.01mPa‧s的低黏度漿液,亦不易發生研磨墊的剝離。 During the polishing operation, the polishing slurry is supplied between the member to be polished and the polishing pad. There are no restrictions on the composition (the material of the abrasive grains, the particle size, the type of solvent, the concentration of the slurry, etc.) or the presence or absence of additives (surfactants, thickeners, etc.) and types of the polishing slurry supplied during this polishing operation. However, the present invention is particularly useful for grinding operations using a low-viscosity grinding slurry. This is because the low-viscosity abrasive slurry easily penetrates the bonding interface between the adsorption layer and the platform. The present invention is an effective polishing slurry whose polishing viscosity at 20 ° C is 10 mPa · s or less. In addition, it is also effective for polishing slurry of 3 mPa · s or less, and also effective for polishing slurry of 1.5 mPa · s or less. Even with a low viscosity slurry of 0.01 mPa · s, peeling of the polishing pad is unlikely to occur.

依序研磨被研磨構件,在觀察到研磨墊有消耗時進行更換。此時,與以往相同地,若與研磨墊往上方錯位移動並使空氣進入界面,即可輕易解除研磨墊的固定。然後,將相同構成的新研磨墊固定於平台而繼續進行研磨作業。 The members to be polished are sequentially polished and replaced when it is observed that the polishing pad is consumed. At this time, as in the past, if the polishing pad is moved upside from the polishing pad and air enters the interface, the fixing of the polishing pad can be easily released. Then, a new polishing pad having the same structure was fixed to the table and the polishing operation was continued.

本發明之研磨墊,係具有由既定聚矽氧組成物所構成之吸附層,並在該吸附層表面具備環狀屏蔽構件。根據本發明,可防止因研磨漿液侵入吸附層與平台之間而導致之研磨墊的偏移或剝離。藉此,即使在長時間的研磨作業中,亦不會因為研磨墊的不良情況而中斷作業,可進行有效率的作業。此外,本發明中,確保了吸附層原來的功能,故研磨墊之更換、固定作業的操作性亦佳。 The polishing pad of the present invention has an adsorption layer composed of a predetermined polysiloxane composition, and is provided with a ring-shaped shielding member on the surface of the adsorption layer. According to the present invention, it is possible to prevent the polishing pad from shifting or peeling due to the intrusion of the polishing slurry between the adsorption layer and the platform. Thereby, even in a long-term polishing operation, the operation is not interrupted due to the defect of the polishing pad, and an efficient operation can be performed. In addition, in the present invention, the original function of the adsorption layer is ensured, so the operability of replacing and fixing the polishing pad is also good.

第1圖係說明將本發明之研磨墊固定於平台之狀態的圖。 FIG. 1 is a diagram illustrating a state where the polishing pad of the present invention is fixed to a stage.

第2圖係說明依據本發明進行研磨作業時之研磨漿液之動作狀態的圖。 Fig. 2 is a diagram illustrating the operation state of a polishing slurry when a polishing operation is performed according to the present invention.

第3圖係顯示環狀屏蔽構件的剖面形狀之一例的圖。 FIG. 3 is a diagram showing an example of a cross-sectional shape of a ring-shaped shielding member.

第4圖係說明本實施態樣所製造之研磨墊的外觀與剖面構成的圖。 FIG. 4 is a diagram illustrating the appearance and cross-sectional structure of the polishing pad manufactured in this embodiment.

第5圖係本實施態樣所使用之研磨裝置的概略圖。 Fig. 5 is a schematic diagram of a polishing apparatus used in this embodiment.

第6圖係說明具備吸附層之研磨墊的構成的圖。 FIG. 6 is a diagram illustrating the configuration of a polishing pad provided with an adsorption layer.

以下說明本發明之較佳實施態樣。本實施態樣中,係製造在以往之具備吸附層的研磨墊上接合有環狀屏蔽構件的研磨墊,並進行矽晶圓的研磨作業。 Hereinafter, preferred embodiments of the present invention will be described. In this embodiment, a polishing pad having a ring-shaped shielding member bonded to a conventional polishing pad having an adsorption layer is manufactured, and a polishing operation of a silicon wafer is performed.

第4圖係顯示本實施態樣所製造的研磨墊之外觀的圖。本實 施態樣所製造的研磨墊為圓形的薄片,表面上具有研磨層,背面具有吸附層。研磨層及吸附層係由基材所支撐。此外,在吸附層上具備沿著研磨墊(吸附層)外周的環狀屏蔽構件。 FIG. 4 is a view showing the appearance of the polishing pad manufactured in this embodiment. The polishing pad manufactured in this embodiment is a circular sheet, which has a polishing layer on the surface and an adsorption layer on the back. The polishing layer and the adsorption layer are supported by a substrate. In addition, the adsorption layer is provided with a ring-shaped shielding member along the outer periphery of the polishing pad (adsorption layer).

此處,說明本實施態樣之研磨墊的各構成構件與製造步驟。首先,基材係由作為樹脂材料之PET所構成的圓形薄片(厚度50μm,外徑850mm)。在該基材的一面(背面)上塗布含有包含聚有機矽氧烷之聚矽氧成分的塗布液,而形成吸附層。塗布液為無溶劑型聚矽氧液,其係在100重量份的包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷的聚矽氧(分子量30000)中,包含0.6重量份的交聯劑、2重量份的鉑觸媒。將該塗布液塗布於基材後,於150至160℃燒製100秒,使聚矽氧進行交聯,而形成吸附層。交聯後之吸附層的厚度為30μm。 Here, each constituent member and manufacturing process of the polishing pad of this embodiment are demonstrated. First, the substrate is a circular sheet (thickness: 50 μm, outer diameter: 850 mm) made of PET, which is a resin material. A coating liquid containing a polysiloxane component containing a polyorganosiloxane is applied on one surface (back surface) of the substrate to form an adsorption layer. The coating liquid is a non-solvent type polysiloxane, which contains 0.6 parts by weight of 100 parts by weight of polysiloxane (molecular weight 30,000) containing a linear polyorganosiloxane having a vinyl group only at both ends. Crosslinking agent, 2 parts by weight of platinum catalyst. After this coating liquid is applied to a substrate, it is fired at 150 to 160 ° C for 100 seconds to crosslink the polysiloxane to form an adsorption layer. The thickness of the adsorption layer after crosslinking was 30 μm.

形成於基材之另一面的研磨層,係牛皮(suede)質感的通用型酯系研磨布(型號7355-000FE),且為絨毛(nap)長度450μm的圓形研磨布(厚度1.37mm)。本實施態樣中,在上述形成有吸附層之基材的另一面,以丙烯酸系接著劑接著有研磨層。 The abrasive layer formed on the other side of the substrate is a general-purpose ester abrasive cloth (model 7355-000FE) with a suede texture and a circular abrasive cloth (thickness 1.37mm) with a nap length of 450 μm. In this aspect, an abrasive layer is adhered to the other surface of the substrate on which the adsorption layer is formed with an acrylic adhesive.

此外,環狀屏蔽構件之材質係由纖維素系不織布(吸水率30%)所構成。屏蔽構件的尺寸係外徑850mm、內徑800mm(寬度25mm)、厚度10mm。此外,關於本實施態樣中的研磨墊的直徑與環狀屏蔽構件的內徑,係考量後述研磨試驗中使用之研磨裝置的平台的外徑尺寸而設定。亦即,相對於平台的外徑800mm,將研磨墊的直徑設定為比其大50mm,並且將環狀屏蔽構件的內徑設定為與平台的外徑大致相等。再者,本實施態樣中,係以丙烯酸系接著劑將該環狀屏蔽構件接著於吸附層。藉此而製成本實施態樣之研磨墊。 In addition, the material of the ring-shaped shielding member is composed of a cellulose-based nonwoven fabric (30% water absorption). The dimensions of the shielding member are 850 mm in outer diameter, 800 mm in inner diameter (25 mm in width), and 10 mm in thickness. The diameter of the polishing pad and the inner diameter of the ring-shaped shielding member in this embodiment are set in consideration of the outer diameter of the platform of the polishing apparatus used in the polishing test described later. That is, the diameter of the polishing pad is set to be larger than the outer diameter of the platform by 800 mm, and the inner diameter of the annular shielding member is set to be substantially equal to the outer diameter of the platform. In this embodiment, the ring-shaped shielding member is adhered to the adsorption layer with an acrylic adhesive. Thereby, the polishing pad of this embodiment is manufactured.

其次,使用本實施態樣之研磨墊進行研磨試驗。該研磨試驗, 係在如第5圖所示的研磨裝置的平台(外徑800mm,SUS製)上安裝本實施態樣的研磨墊,以矽晶圓(φ8英吋)作為被研磨構件而進行研磨。安裝研磨墊時,將環狀屏蔽構件嵌入平台,從研磨層上方加壓。然後,將作為被研磨構件的矽晶圓按壓於研磨層上並使其旋轉,同時將研磨漿液滴下(流量150ml/min)至研磨層,以進行研磨作業。 Next, a polishing test was performed using the polishing pad of this embodiment. This polishing test was carried out by mounting a polishing pad of this embodiment on a platform (outer diameter 800 mm, manufactured by SUS) of a polishing apparatus as shown in FIG. Grinding. When the polishing pad is installed, the ring-shaped shielding member is embedded in the platform and pressurized from above the polishing layer. Then, the silicon wafer as a member to be polished is pressed onto the polishing layer and rotated, and the polishing slurry is dropped (flow rate 150 ml / min) to the polishing layer to perform the polishing operation.

研磨漿液,係使用將包含膠質二氧化矽作為研磨粒子的市售研磨劑(商品名稱Glanzox,Fujimiinc股份有限公司製)以純水與界面活性劑稀釋而成者(研磨劑:純水:界面活性劑=70:25:5)。該研磨漿液之黏度為0.7mPa.s。 The polishing slurry is obtained by diluting pure water with a surfactant using a commercially available abrasive (brand name Glanzox, manufactured by Fujimiinc Co., Ltd.) containing colloidal silica as abrasive particles (abrasive: pure water: interface activity) Agent = 70: 25: 5). The viscosity of the grinding slurry was 0.7 mPa. s.

其他研磨條件如下所述。 Other polishing conditions are as follows.

‧研磨壓力:0.163kgf/cm2 ‧Grinding pressure: 0.163kgf / cm 2

‧研磨墊之旋轉速度:45rpm ‧Rotating speed of polishing pad: 45rpm

‧被研磨構件之旋轉速度:47rpm ‧Rotating speed of the member to be ground: 47rpm

‧研磨頭之搖動速度:250mm/min ‧Shaking speed of grinding head: 250mm / min

‧研磨時間:60min、480min ‧Grinding time: 60min, 480min

在以上述各研磨時間進行研磨作業後,以目視確認研磨墊與平台之密合狀態,調查研磨墊是否偏移或剝離。結果,無論在以60min的短時間進行研磨或以480min的長時間進行研磨,皆未觀察到研磨墊的偏移或剝離。此外,在以純水洗淨研磨作業後的晶圓並使其乾燥後,觀察被研磨面,結果完全未觀察到明顯的傷痕。 After the polishing operation is performed at each of the above polishing times, the close state of the polishing pad and the table is visually confirmed, and it is investigated whether the polishing pad is shifted or peeled. As a result, no deviation or peeling of the polishing pad was observed whether the polishing was performed in a short time of 60 minutes or the polishing was performed in a long time of 480 minutes. In addition, after the wafer after the polishing operation was washed with pure water and dried, the surface to be polished was observed, and as a result, no obvious scratch was observed at all.

比較例:為了與本實施態樣的研磨墊做比較,使用具備吸附層的以往的研磨墊(第6圖)進行研磨試驗。該比較例的研磨墊,基本上與本實施態樣的研磨墊為相同的構成,在基材的各面具備研磨層與吸附層。研磨層及吸附層的構成材料及製造步驟係與本實施態樣的研磨墊相同。然 而,吸附層上未接合環狀屏蔽構件。此外,比較例的研磨墊的外徑係與平台的外徑為約略相等。 Comparative example: In order to compare with the polishing pad of this embodiment, the polishing test was performed using the conventional polishing pad (FIG. 6) provided with the adsorption layer. The polishing pad of this comparative example has basically the same structure as the polishing pad of this embodiment, and includes a polishing layer and an adsorption layer on each surface of the substrate. The constituent materials and manufacturing steps of the polishing layer and the adsorption layer are the same as those of the polishing pad of this embodiment. However, the ring-shaped shielding member was not bonded to the adsorption layer. The outer diameter of the polishing pad of the comparative example is approximately equal to the outer diameter of the stage.

將比較例的研磨墊與實施態樣相同地吸附固定於平台,以與上述相同的研磨條件進行研磨,結果,在以60min的短時間進行的研磨時,未觀察到研磨墊的偏移、剝離。然而,在以480min的長時間進行研磨時,在經過250min的時候,開始發生研磨墊的偏移,並且發生剝離的問題。因此,可確認本發明中之吸附層上之環狀屏蔽構件的效果。 The polishing pad of the comparative example was adsorbed and fixed to a platform in the same manner as in the embodiment, and was polished under the same polishing conditions as described above. As a result, no polishing pad shift or peeling was observed during polishing in a short time of 60 minutes. . However, when polishing was performed for a long time of 480 minutes, the polishing pad shift started when 250 minutes passed, and the problem of peeling occurred. Therefore, the effect of the ring-shaped shielding member on the adsorption layer in the present invention can be confirmed.

[產業上之可利用性]     [Industrial availability]    

如以上所說明,本發明之研磨墊,即使在長時間的研磨作業中,亦不會從平台偏移或剝離,而可維持固定狀態。根據本發明,可在維持吸附層所具有之便利性的狀態下進行穩定的研磨作業。根據本發明,即使對於邁向大徑化、大面積化的晶圓及顯示器面板,亦可形成高精度的研磨面。 As described above, the polishing pad of the present invention does not shift or peel off from the platform even during a long-term polishing operation, and can maintain a fixed state. According to the present invention, a stable polishing operation can be performed while maintaining the convenience provided by the adsorption layer. According to the present invention, it is possible to form a polished surface with high accuracy even for wafers and display panels that are becoming larger in diameter and larger in area.

Claims (5)

一種研磨墊,其係由基材、形成於該基材之一面的吸附層、以及形成於該基材之另一面的研磨層所構成;其中,該研磨墊係在研磨作業時將該吸附層吸附、固定於平台並將研磨漿液供給至該研磨層上而使用者;該吸附層包含由選自下列聚矽氧中之至少1種聚矽氧所交聯成的組成物:包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷的聚矽氧、包含在兩末端及側鏈具有乙烯基之直鏈狀聚有機矽氧烷的聚矽氧、包含僅在末端具有乙烯基之分支狀聚有機矽氧烷的聚矽氧、以及包含在末端及側鏈具有乙烯基之分支狀聚有機矽氧烷的聚矽氧;為了抑制該研磨漿液侵入該吸附層與該平台間之界面,而在吸附層上具備沿著研磨墊外周的環狀屏蔽構件。     A polishing pad is composed of a substrate, an adsorption layer formed on one surface of the substrate, and a polishing layer formed on the other surface of the substrate; wherein, the polishing pad is formed by the adsorption layer during a polishing operation. Adsorb, fix on the platform and supply the grinding slurry to the grinding layer, and the user; the adsorption layer contains a composition crosslinked by at least one polysiloxane selected from the group consisting of the following: Polysiloxane containing a linear polyorganosiloxane having a vinyl group at the end, polysiloxane containing a linear polyorganosiloxane having a vinyl group at both ends and side chains, and polysiloxane containing a group having a vinyl group only at the end. Polysiloxane of branched polyorganosiloxane and polysiloxane containing branched polyorganosiloxane having vinyl groups at the end and side chains; in order to prevent the grinding slurry from entering the interface between the adsorption layer and the platform A ring-shaped shielding member is provided on the adsorption layer along the outer periphery of the polishing pad.     如申請專利範圍第1項所述之研磨墊,其中,屏蔽構件的剖面形狀為矩形、或是下端部的單側或兩側經倒角的矩形。     The polishing pad according to item 1 of the scope of patent application, wherein the cross-sectional shape of the shielding member is rectangular, or one side or both sides of the lower end are chamfered rectangles.     如申請專利範圍第1或2項所述之研磨墊,其中,屏蔽構件之寬度為5mm以上,厚度為10mm以上50mm以下。     The polishing pad according to item 1 or 2 of the scope of patent application, wherein the width of the shielding member is 5 mm or more and the thickness is 10 mm or more and 50 mm or less.     如申請專利範圍第1至3項中任一項所述之研磨墊,其中,屏蔽構件係由纖維、橡膠、乙烯系樹脂、苯乙烯系樹脂、聚碳酸酯、氟樹脂、聚胺基甲酸酯中的任一種材料所構成。     The polishing pad according to any one of claims 1 to 3, wherein the shielding member is made of fiber, rubber, vinyl resin, styrene resin, polycarbonate, fluororesin, polyurethane It is composed of any one of the esters.     一種研磨方法,其係使用如申請專利範圍第1至4項中任一項所述之研磨墊而進行研磨作業者;其中,使用直徑大於該平台之直徑且在吸附層上具備環狀屏蔽構件的研磨墊, 將該研磨墊吸附固定於該平台,對於研磨墊的研磨層供給研磨漿液以進行研磨作業。     A polishing method using a polishing pad as described in any one of claims 1 to 4 of the scope of patent application for a polishing operation; wherein a diameter larger than the diameter of the platform is used and an annular shielding member is provided on the adsorption layer The polishing pad is adsorbed and fixed on the platform, and a polishing slurry is supplied to the polishing layer of the polishing pad to perform a polishing operation.    
TW108113809A 2018-05-08 2019-04-19 Polishing pad and polishing method using the polishing pad TW201946725A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-089603 2018-05-08
JP2018089603A JP7026943B2 (en) 2018-05-08 2018-05-08 Polishing pad and polishing method using the polishing pad

Publications (1)

Publication Number Publication Date
TW201946725A true TW201946725A (en) 2019-12-16

Family

ID=68468265

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108113809A TW201946725A (en) 2018-05-08 2019-04-19 Polishing pad and polishing method using the polishing pad

Country Status (5)

Country Link
JP (1) JP7026943B2 (en)
KR (1) KR102639470B1 (en)
CN (1) CN111819033B (en)
TW (1) TW201946725A (en)
WO (1) WO2019216301A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230173637A1 (en) * 2020-03-26 2023-06-08 Fujibo Holdings, Inc. Polishing pad, polishing unit, polishing device, and method for manufacturing polishing pad
KR20240049977A (en) 2022-10-11 2024-04-18 건국대학교 글로컬산학협력단 Apparatus for preparing slightly acidic hypochlorous acid water and method for preparing slightly acidic hypochlorous acid water using the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3175511B2 (en) * 1994-12-26 2001-06-11 住友金属工業株式会社 Polishing device and polishing pad attaching / detaching device
JP2842865B1 (en) * 1997-08-22 1999-01-06 九州日本電気株式会社 Polishing equipment
JPH11243135A (en) * 1998-02-26 1999-09-07 Kyocera Corp Vacuum suction cup
JP4041577B2 (en) * 1998-03-16 2008-01-30 スピードファム株式会社 Surface plate of polishing apparatus and polishing pad attaching method
US6227950B1 (en) * 1999-03-08 2001-05-08 Speedfam-Ipec Corporation Dual purpose handoff station for workpiece polishing machine
US6464576B1 (en) * 1999-08-31 2002-10-15 Rodel Holdings Inc. Stacked polishing pad having sealed edge
JP2003510826A (en) * 1999-09-29 2003-03-18 ロデール ホールディングス インコーポレイテッド Polishing pad
JP3992092B2 (en) 2000-04-07 2007-10-17 東京エレクトロン株式会社 Sample polishing apparatus, sample polishing method, and polishing pad
JP4686010B2 (en) 2000-07-18 2011-05-18 ニッタ・ハース株式会社 Polishing pad
US7201647B2 (en) * 2002-06-07 2007-04-10 Praxair Technology, Inc. Subpad having robust, sealed edges
US6783437B1 (en) 2003-05-08 2004-08-31 Texas Instruments Incorporated Edge-sealed pad for CMP process
JP2006255809A (en) * 2005-03-15 2006-09-28 Disco Abrasive Syst Ltd Polishing device
JP5061308B2 (en) * 2007-01-05 2012-10-31 フジコピアン株式会社 Adhesive sheet
JP5310259B2 (en) 2009-05-26 2013-10-09 信越半導体株式会社 Polishing apparatus and workpiece polishing method
JP4680314B1 (en) * 2010-02-04 2011-05-11 東邦エンジニアリング株式会社 Auxiliary plate for polishing pad and method for regenerating polishing pad using the same
JP5789870B2 (en) 2011-09-14 2015-10-07 東邦エンジニアリング株式会社 Auxiliary plate and polishing apparatus for polishing pad having anti-soaking structure
JP5765858B2 (en) 2012-12-04 2015-08-19 丸石産業株式会社 Polishing pad
JP6074245B2 (en) * 2012-12-07 2017-02-01 ニッタ・ハース株式会社 Polishing pad

Also Published As

Publication number Publication date
JP2019195855A (en) 2019-11-14
WO2019216301A1 (en) 2019-11-14
JP7026943B2 (en) 2022-03-01
CN111819033B (en) 2022-05-13
CN111819033A (en) 2020-10-23
KR20210006325A (en) 2021-01-18
KR102639470B1 (en) 2024-02-21

Similar Documents

Publication Publication Date Title
JP5765858B2 (en) Polishing pad
US10201886B2 (en) Polishing pad and method for manufacturing the same
TWI543843B (en) Retention pad
TW201946725A (en) Polishing pad and polishing method using the polishing pad
JP3166396U (en) Polishing pad
JPH08339979A (en) Holder for substrate to be polished and polishing method for substrate
TWI740042B (en) Polishing method using a polishing pad having an adsorption layer
JP2008023625A (en) Workpiece retaining material
CN111867781B (en) Substrate for polishing pad and polishing method using the same
JP5503049B2 (en) Holding pad
JP2009061524A (en) Holding pad
CN104552033A (en) Method for manufacturing polishing pad and polishing apparatus
JP2011003691A (en) Pad transfer mechanism for semiconductor substrate
JP2011000670A (en) Substrate holder
JP2000308961A (en) Affixing plate and manufacture of same
JP2012179704A (en) Polishing tape, and polishing method and polishing device using the polishing tape
JP2003231051A (en) Polishing device and polishing method
JP2004090121A (en) Single-side polishing device for plate body, back pad used for the device, and its manufacturing method
CN118983219A (en) A wafer adsorption method
TW202041324A (en) Surface plate for polishing apparatus, polishing apparatus and polishing method
JP2015100888A (en) Holding pad
TW201507814A (en) Methods for manufacturing polishing pad and polishing apparatus