TW201905995A - Tangent ribbon integrated adhesive sheet - Google Patents

Abstract

The present invention provides a dicing integration type adhesive sheet, which is suitable for implementing an excellent segmentation on an adhesive sheet in a segmentation extending step performed by using a dicing tape integration type adhesive sheet to obtain a semiconductor chip with an adhesive film by dividing a semiconductor wafer into individual sheets. The dicing tape integration type adhesive sheet X of the present invention comprises a dicing tape 20 and an adhesive sheet. The dicing tape 20 has a laminated structure including a base material 21 and an adhesive layer 22. The adhesive sheet is tightly adhered to the adhesive layer 22 of the dicing tape 20 in a peeling manner. The adhesive sheet is, for example, a film 10 for protecting the back surface of a semiconductor chip. Under the conditions of an initial chuck distance of 16 mm, a temperature of -15 DEG C, and a load increase speed of 1.2 N/min, the adhesive sheet has a breaking strength of 1.2 N or less and a breaking elongation rate of 1.2% or less when performing a tensile test on an adhesive sheet test piece with a width of 2 mm.

Description

Cut tape integrated type adhesive sheet

The present invention relates to a dicing tape-integrated adhesive sheet that can be used in the manufacturing process of a semiconductor device.

In the manufacturing process of a semiconductor device, a semiconductor wafer as a workpiece is bonded with a dicing tape-integrated adhesive sheet of a corresponding size, and then an adhesive film is obtained by singulating the semiconductor wafer. Of semiconductor wafers. Examples of the dicing tape-integrated adhesive sheet include a dicing tape-integrated back surface protective film, a so-called dicing die-bonding film, and the like. The dicing tape-integrated back protective film has a dicing tape including a laminated structure of a substrate and an adhesive layer, and a back protective film in close contact with the adhesive layer, and is used to obtain a semiconductor wafer with back protection for the semiconductor wafer. It is used for semiconductor wafers of comparable size with adhesive film. On the other hand, the cut crystal sticky film has a cut crystal band including a laminated structure of a substrate and an adhesive layer, and a sticky film adhered to the adhesive layer, and is obtained by obtaining an adhesive with a size equivalent to a wafer. It is used in the aspect of a semiconductor wafer with an adhesive film. Techniques related to these cut crystal tape-integrated adhesive sheets are described in, for example, Patent Documents 1 to 4 below. [Prior Art Literature] [Patent Literature]

[Patent Literature 1] Japanese Patent Laid-Open No. 2007-2173 [Patent Literature 2] Japanese Patent Laid-Open No. 2010-177401 [Patent Literature 3] Japanese Patent Laid-Open No. 2011-151360 [Patent Literature 4] Japanese Patent Special Publication No. 2016-213244

[Problems to be solved by the invention]

As one of the methods for obtaining a semiconductor wafer with a sticking crystal by using a die-bonding film, there is known a method of cutting a die-bonding film by extending a die-cutting band in the die-bonding film. . In this method, first, a semiconductor wafer that is a workpiece is bonded to a die-bond film of a die-cut die-bond film. This semiconductor wafer is processed, for example, in such a manner that the semiconductor wafer can be singulated in accordance with the severing of the die-bond film and then singulated into a plurality of semiconductor wafers. Secondly, in order to cut the sticky film by forming a plurality of sticking films on the semiconductor wafer, the sticky film on the self-cutting band is respectively cut, and the cut band of the cut crystal sticky film is extended (extension step for cutting) ). In this extending step, the semiconductor wafer on the die-bonding film is also cut off at a position corresponding to the cut-off portion of the die-bonding film, and the semiconductor wafer is singulated into a plurality of pieces on the die-cutting die-bonding film or the die-cutting band. Semiconductor wafer. Secondly, after undergoing, for example, a cleaning step, each semiconductor wafer and the adhesive film of the size equivalent to the wafer which are closely contacted therewith are self-cutting from the lower side of the dicing tape by the pin member of the picking mechanism, and then on the dicing tape. Pick it up. Thus, a semiconductor wafer with an adhesive film for a sticky crystal film can be obtained. The adhesive-attached semiconductor wafer is fixed to the mounting substrate through the adhesive film through a die attach.

In the case where the dicing tape-integrated type adhesive sheet is used in the cutting extension step as described above, the dicing tape-integrated type adhesive sheet is required to be scheduled to be cut during the extending step. The site is cut appropriately.

The present invention was conceived based on the above situation, and an object thereof is to provide a dicing tape-integrated adhesive sheet suitable for obtaining a singulation of a semiconductor wafer by singulation. In the extension step for cutting using a dicing tape-integrated adhesive sheet for a semiconductor wafer with an adhesive film, a good dicing of the adhesive sheet is achieved. [Technical means to solve the problem]

According to the present invention, there is provided a dicing tape-integrated adhesive sheet. This dicing tape-integrated adhesive sheet includes a dicing tape and an adhesive sheet. The dicing tape has a laminated structure including a substrate and an adhesive layer. The adhesive sheet is closely adhered to the adhesive layer in the dicing tape in a peelable manner. The breaking strength of the adhesive sheet in a tensile test on an adhesive sheet test piece with a width of 2 mm under the conditions of an initial inter-chuck distance of 16 mm, a temperature of -15 ° C, and a load increase rate of 1.2 N / min. It is 1.2 N or less, preferably 1.1 N or less, and more preferably 1 N or less. At the same time, the elongation at break of the adhesive sheet in the tensile test (the ratio of the length of the extension at the break to the length before the extension) is 1.2% or less, preferably 1.1% or less, and more preferably 1 %the following. The dicing tape-integrated adhesive sheet having such a structure can be used in the manufacturing process of a semiconductor device. Specifically, the dicing tape-integrated adhesive sheet of the present invention can be used as a dicing tape-integrated rear protective film formed by using a so-called back protective film for the adhesive sheet to obtain protection for the back of the semiconductor wafer. It is used for a semiconductor wafer with an adhesive film corresponding to the size of the wafer. In addition, the dicing tape-integrated adhesive sheet of the present invention can be used as a dicing die-casting film made of a so-called sticking film to the adhesive sheet, and can be used to obtain a dicing die with a size equivalent to a wafer. The film is then used on the semiconductor wafer side.

Regarding the adhesive sheet of the cut-crystal ribbon-integrated adhesive sheet, as described above, the width was 2 mm under the conditions of an initial chuck distance of 16 mm, -15 ° C, and a load increase rate of 1.2 N / min. The breaking strength in the tensile test performed on the adhesive sheet test piece is 1.2 N or less, preferably 1.1 N or less, and more preferably 1 N or less. In this case, when a semiconductor wafer with an adhesive film is obtained during the manufacturing process of the semiconductor device, the dicing tape-integrated type adhesive sheet is used to perform the slicing extension step. It is preferable that the sheet should act on the cutting force of the adhesive sheet.

As described above, the adhesive sheet of the integrally-cut adhesive tape of the present cut ribbon has a width of 2 mm under the conditions of an initial chuck distance of 16 mm, -15 ° C, and a load increase rate of 1.2 N / min. The elongation at break in the tensile test performed on the adhesive sheet test piece is 1.2% or less, preferably 1.1% or less, and more preferably 1% or less. In this case, when a semiconductor wafer with an adhesive film is obtained during the manufacturing process of the semiconductor device, the dicing tape-integrated type adhesive sheet is used to perform the cutting extension step, and the adhesiveness on the dicing tape is suppressed. The stretched length required for the sheet is preferable.

As described above, the dicing tape-integrated adhesive sheet of the present invention is more suitable for suppressing the cutting force that should be applied to the dicing tape in order to cut off the dicing tape on the dicing tape, and is effective for suppressing The stretched length of the cut adhesive sheet is preferred. Such a cut-to-cut tape-integrated adhesive sheet is suitable for achieving an adhesive sheet when used in a slicing extension step for obtaining a semiconductor wafer with an adhesive film by singulating a semiconductor wafer. Good cut of wood. Specifically, as disclosed in the following examples and comparative examples.

It is preferable that the adhesive sheet of the dicing tape integrated type adhesive sheet has a first layer including an adhesive layer which can be peeled off and adhered to the dicing tape, and a second layer on the first layer. Laminated structure. Such a structure is suitable, for example, to individually express the characteristics required for the side surface of the dicing tape adhesive layer in the adhesive sheet and the characteristics required for the surface for bonding workpieces opposite to the surface. From the viewpoint of simultaneously achieving the functions required for the first layer and the second layer of the adhesive sheet, the value of the ratio of the thickness of the first layer to the thickness of the second layer is preferably 0.2 to 4, and more It is preferably 0.2 to 1.5, more preferably 0.3 to 1.3, and still more preferably 0.6 to 1.1.

In the case where the adhesive sheet of the cut-crystal ribbon-integrated adhesive sheet is a back surface protective film, it is preferable that the first layer has thermosetting properties and the second layer has thermoplastic properties. In the present invention, when the first layer has a thermosetting property and is formed on the surface of the first layer of the back protective film, a high-temperature process such as a so-called re-soldering step is performed after the marking using a laser mark is performed, which is suitable for ensuring the marking information. Visual recognition. In the present invention, the first layer has a thermosetting property and the second layer exhibits a thermoplastic structure. The second layer has a structure that includes, for example, a single thermosetting layer, and is more suitable for the severing step. Good cut off of the back protective film. That is, the above-mentioned constitution in which the first layer of the back surface protective film has thermosetting properties and the second layer exhibits thermoplasticity is preferable in terms of ensuring the visibility of the engraved information and the realization of good severability. .

FIG. 1 is a schematic cross-sectional view of a cut tape integrated type adhesive sheet X according to an embodiment of the present invention. The dicing tape-integrated adhesive sheet X can be used by a user in the manufacturing process of a semiconductor device, and has a laminated structure including a film 10 and a dicing tape 20 as an adhesive sheet. In this embodiment, the film 10 is a back surface protective film bonded to a non-formed surface of a circuit such as a semiconductor wafer as a workpiece. The dicing tape 20 has a laminated structure including a substrate 21 and an adhesive layer 22. The adhesive layer 22 has an adhesive surface 22 a on the film 10 side. The film 10 is in close contact with the adhesive layer 22 or the adhesive surface 22a thereof in a peelable manner. The dicing tape-integrated adhesive sheet X has a disk shape having a size corresponding to a semiconductor wafer or the like as a workpiece. This type of dicing tape-integrated adhesive sheet X is specifically used as a dicing tape-integrated back protective film to obtain an adhesive film having a size equivalent to a wafer with back protection of a semiconductor wafer. Examples of the semiconductor wafer are the following extension steps.

The film 10 as a back surface protective film has a laminated structure including a laser marking layer 11 (first layer) and a wafer mounting layer 12 (second layer). The laser marking layer 11 is located on the side of the dicing tape 20 in the film 10 and is in close contact with the dicing tape 20. Laser marking is applied to the surface of the dicing tape 20 side of the laser marking layer 11 during the manufacturing process of the semiconductor device. In the present embodiment, the laser marking layer 11 contains a thermosetting component and is in a state of being thermally cured. The wafer mounting layer 12 is located on a side where a workpiece such as a semiconductor wafer is bonded in the film 10, and in this embodiment is in an unhardened state and exhibits thermoplasticity.

The laser marking layer 11 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as resin components, and may also have a composition containing a thermoplastic resin having a thermosetting functional group which can react with a hardener to generate a bond. .

Examples of the thermosetting resin when the laser marking layer 11 has a composition containing a thermosetting resin and a thermoplastic resin include epoxy resin, phenol resin, amine resin, unsaturated polyester resin, and polyamine. Urethane resin, silicone resin, and thermosetting polyimide resin. The laser marking layer 11 may contain one type of thermosetting resin or two or more types of thermosetting resin. Epoxy resin tends to have a low content of ionic impurities, such as semiconductor wafers, which is the object of protection of the back surface protective film formed by the film 10 in the following manner. Therefore, it is used as heat in the laser marking layer 11 of the film 10 A curable resin is preferred. Moreover, as a hardening | curing agent for making an epoxy resin show thermosetting property, a phenol resin is preferable.

Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, and hydrogenated bisphenol A epoxy resin. Resin, bisphenol AF epoxy resin, biphenyl epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, phenol novolac epoxy resin, o-cresol novolac epoxy resin, trihydroxybenzene Difunctional epoxy resins or polyfunctional epoxy resins such as methane-based epoxy resins and tetraphenol-based ethane-based epoxy resins. Examples of the epoxy resin include a hydantoin type epoxy resin, an isocyanurate triglycidyl ester type epoxy resin, and a glycidylamine type epoxy resin. The laser marking layer 11 may contain one type of epoxy resin or two or more types of epoxy resin.

Phenol resins function as hardeners for epoxy resins. Examples of such phenol resins include phenol novolac resin, phenol aralkyl resin, cresol novolac resin, third butyl novolac resin, And novolac phenol resins such as nonylphenol novolac resin. Examples of the phenol resin include soluble phenol-type phenol resin and polyhydroxystyrene such as polyparahydroxystyrene. Particularly preferred as the phenol resin in the laser marking layer 11 is a phenol novolak resin or a phenol aralkyl resin. In addition, the laser marking layer 11 may contain one kind of phenol resin as a hardener of the epoxy resin, or may contain two or more kinds of phenol resin as a hardener of the epoxy resin.

When the laser marking layer 11 contains an epoxy resin and a phenol resin as its hardener, the two resins are preferably 1 equivalent to the epoxy group in the epoxy resin, and the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenol resin sufficiently progresses when the laser marking layer 11 is cured.

From the viewpoint of appropriately curing the laser marking layer 11, the content ratio of the thermosetting resin in the laser marking layer 11 is preferably 5 to 60% by mass, and more preferably 10 to 50% by mass.

The thermoplastic resin in the laser marking layer 11 is, for example, one that performs an adhesive function. Examples of the thermoplastic resin when the laser marking layer 11 has a composition containing a thermosetting resin and a thermoplastic resin include acrylic resin, Natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin , Thermoplastic polyimide resin, 6-nylon or 6,6-nylon and other polyamine resins, phenoxy resins, saturated polyester resins such as polyethylene terephthalate or polybutylene terephthalate , Polyamidoamine imine resin, and fluororesin. The laser marking layer 11 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. The acrylic resin is preferred as the thermoplastic resin in the laser marking layer 11 because it has fewer ionic impurities and high heat resistance.

When the laser marking layer 11 contains an acrylic resin as a thermoplastic resin, the acrylic resin is preferably a monomer unit derived from a (meth) acrylic acid ester in a mass ratio. "(Meth) acrylic" means "acrylic" and / or "methacrylic".

Examples of the (meth) acrylic acid ester used as a monomer unit constituting an acrylic resin, that is, the (meth) acrylic acid ester used as a constituent monomer of an acrylic resin include, for example, (meth) acrylic acid alkyl esters, ( Cycloalkyl (meth) acrylate and aryl (meth) acrylate. Examples of the alkyl (meth) acrylate include methyl (meth) acrylate, ethyl, propyl, isopropyl, butyl, isobutyl, second butyl, third butyl, Amyl, isoamyl, hexyl, heptyl, octyl, 2-ethylhexyl, isooctyl, nonyl, decyl, isodecyl, undecyl, dodecyl (i.e. Lauryl ester), tridecyl ester, tetradecyl ester, cetyl ester, octadecyl ester, and eicosyl ester. Examples of the cycloalkyl (meth) acrylate include cyclopentyl and cyclohexyl (meth) acrylic acid. Examples of the aryl (meth) acrylate include phenyl (meth) acrylate and benzyl (meth) acrylate. As a constituent monomer of the acrylic resin, one (meth) acrylate may be used, or two or more (meth) acrylates may be used. The acrylic resin can be obtained by polymerizing a raw material monomer for forming the acrylic resin. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization.

Regarding the acrylic resin, for example, in order to improve cohesion or heat resistance, one or two or more other monomers capable of being copolymerized with a (meth) acrylate may be used as a constituent monomer. Examples of such a monomer include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, acrylamide, and acrylonitrile. . Examples of the carboxyl group-containing monomer include acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, And butenoic acid. Examples of the acid anhydride monomer include maleic anhydride and itaconic anhydride. Examples of the hydroxyl-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, and 6- (meth) acrylate Hydroxyhexyl ester, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, and (4-hydroxymethyl ring) (Hexyl) methyl ester. Examples of the epoxy group-containing monomer include glycidyl (meth) acrylate and methyl glycidyl (meth) acrylate. Examples of the sulfonic acid group-containing monomer include styrenesulfonic acid, allylsulfonic acid, 2- (meth) acrylamido-2-methylpropanesulfonic acid, and (meth) acrylamidopropanesulfonic acid. Acid, and (meth) acrylic acid naphthalenesulfonic acid. Examples of the phosphate group-containing monomer include 2-hydroxyethylpropenylphosphonophosphate.

The acrylic resin contained in the laser marking layer 11 is preferably a copolymer of monomers appropriately selected from butyl acrylate, ethyl acrylate, acrylonitrile, acrylic acid, 2-ethylhexyl acrylate, and glycidyl acrylate. Thing. Such a structure in the film 10 as the back surface protective film is preferable in that the visibility of the engraved information using the laser mark and the good cutting performance described below in the cutting extension step are simultaneously achieved.

When the laser marking layer 11 has a composition containing a thermoplastic resin with a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin used to constitute the acrylic resin containing a thermosetting functional group is preferably a monomer unit derived from a (meth) acrylic acid ester in a mass ratio. As such a (meth) acrylate, for example, the same (meth) acrylate as described above as the constituent monomer of the acrylic resin contained in the laser marking layer 11 can be used. On the other hand, as a thermosetting functional group which comprises the acrylic resin containing a thermosetting functional group, a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group are mentioned, for example. Among these, glycidyl and carboxyl groups can be suitably used. That is, as the acrylic resin containing a thermosetting functional group, an acrylic resin containing a glycidyl group or an acrylic resin containing a carboxyl group can be suitably used. In addition, a curing agent that can react with the thermosetting functional group in the acrylic resin containing the thermosetting functional group is selected. When the thermosetting functional group of the acrylic resin containing a thermosetting functional group is a glycidyl group, as the curing agent, the same phenol resin as described above as the curing agent for epoxy resin can be used.

The composition for forming the laser marking layer 11 preferably contains a thermosetting catalyst. It is preferable to mix | blend a thermosetting catalyst with the laser marking layer formation composition in order to fully advance the hardening reaction of a resin component at the time of hardening of the laser marking layer 11, or to raise the hardening reaction rate. Examples of such a thermosetting catalyst include an imidazole-based compound, a triphenylphosphine-based compound, an amine-based compound, and a trihaloborane-based compound. Examples of the imidazole-based compound include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole. , 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methyl Imidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6- [2'-methyl Imidazolyl- (1 ')]-ethyl mesitylene, 2,4-diamino-6- [2'-undecylimidazolyl- (1')]-ethyl mesityl, 2,4- Diamino-6- [2'-ethyl-4'-methylimidazolyl- (1 ')]-ethylhexyltriamine, 2,4-diamino-6- [2'-methylimidazolyl -(1 ')]-Ethyl-triisotricyanic acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethyl Imidazole. Examples of the triphenylphosphine-based compound include triphenylphosphine, tri (butylphenyl) phosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, and diphenyltolyl Phosphine, tetraphenylphosphonium bromide, methyltriphenylphosphonium bromide, methyltriphenylphosphonium chloride, methoxymethyltriphenylphosphonium chloride, and benzyltriphenylphosphonium chloride. The triphenylphosphine-based compound also includes a compound having a triphenylphosphine structure and a triphenylborane structure. Examples of such compounds include tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra-p-tolylborate, benzyltriphenylphosphonium tetraphenylborate, and triphenylphosphine Triphenylborane. Examples of the amine-based compound include monoethanolamine trifluoroborate and dicyanodiamine. Examples of the trihaloborane-based compound include trichloroborane. The composition for forming a laser marking layer may contain one type of thermosetting catalyst, or may contain two or more types of thermosetting catalyst.

The laser marking layer 11 may contain a filler. It is preferable that the filler is prepared for the laser marking layer 11 in terms of adjusting the elastic modulus of the laser marking layer 11, the drop point strength, and the elongation at break. Examples of the filler include inorganic fillers and organic fillers. Examples of the constituent material of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, Boron nitride, crystalline silicon dioxide, and amorphous silicon dioxide. Examples of the constituent material of the inorganic filler include simple metals such as aluminum, gold, silver, copper, and nickel, or alloys, amorphous carbon, and graphite. Examples of constituent materials of the organic filler include polymethyl methacrylate (PMMA), polyimide, polyimide, imine, polyetheretherketone, polyetherimide, and polyesterimide . The laser marking layer 11 may contain one kind of filler or may contain two or more kinds of fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a sheet shape. When the laser marking layer 11 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.05 to 1 μm. The filler having an average particle diameter of 10 μm or less is preferable in that a sufficient filler-adding effect is obtained in the laser marking layer 11 and heat resistance is ensured. The average particle diameter of the filler can be determined using, for example, a photometric particle size distribution meter (trade name "LA-910", manufactured by Horiba, Ltd.). When the laser marking layer 11 contains a filler, the content of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and even more preferably 20% by mass or more. The content is preferably 50% by mass or less, more preferably 47% by mass or less, and even more preferably 45% by mass or less.

The laser marking layer 11 contains a colorant in this embodiment. The colorant may be a pigment or a dye. Examples of the colorant include a black-based colorant, a cyan-based colorant, a magenta-based colorant, and a yellow-based colorant. The laser marking layer 11 preferably contains a black-based colorant in terms of achieving high visibility of the information engraved on the laser marking layer 11 by the laser marking. Examples of the black-based colorant include azo pigments such as carbon black, graphite (black lead), copper oxide, manganese dioxide, and azomethine azo black, aniline black, perylene black, titanium black, and cyanine Black, activated carbon, ferrite, magnetite, chromium oxide, iron oxide, molybdenum disulfide, composite oxide black pigment, anthraquinone organic black dye, and azo organic black dye. Examples of the carbon black include furnace black, chimney black, acetylene black, thermal carbon black, and lamp black. Examples of the black-based colorant include C.I. Solvent Black 3, C.I. Solvent Black 7, C.I. Solvent Black 22, C.I. Solvent Black 27, C.I. Solvent Black 29, C.I. Solvent Black 34, C.I. Solvent Black 43, and C.I. Solvent Black 70. Examples of the black-based colorant include C.I. direct black 17, C.I. direct black 19, C.I. direct black 22, C.I. direct black 32, C.I. direct black 38, C.I. direct black 51, and C.I. direct black 71. Examples of the black-based colorant include CI acid black 1, CI acid black 2, CI acid black 24, CI acid black 26, CI acid black 31, CI acid black 48, CI acid black 52, CI acid black 107, CI Acid black 109, CI acid black 110, CI acid black 119, and CI acid black 154. Examples of the black-based colorant include C.I. disperse black 1, C.I. disperse black 3, C.I. disperse black 10, and C.I. disperse black 24. Examples of the black-based colorant include C.I. Pigment Black 1 and C.I. Pigment Black 7. The laser marking layer 11 may contain one kind of coloring agent or two or more kinds of coloring agent. The content of the coloring agent in the laser marking layer 11 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and even more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and even more preferably 5% by weight or less. These constitutions regarding the content of the colorant are preferable in terms of achieving higher visibility of the information engraved on the laser marking layer 11 by the laser marking.

The laser marking layer 11 may optionally contain one or two or more other components. Examples of the other components include a flame retardant, a silane coupling agent, and an ion trapping agent. Examples of the flame retardant include antimony trioxide, antimony pentoxide, and brominated epoxy resin. Examples of the silane coupling agent include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropyl Methyldiethoxysilane. Examples of the ion trapping agent include aluminum magnesium carbonates, bismuth hydroxide, and antimony hydrous oxide (for example, "IXE-300" manufactured by Toa Synthesis Co., Ltd.), and zirconium phosphate of a specific structure (for example, manufactured by Toa Synthesis Co., Ltd.) "IXE-100"), magnesium silicate (such as "Kyoword 600" manufactured by Kyowa Chemical Industry Co., Ltd.), and aluminum silicate (such as "Kyoword 700" manufactured by Kyowa Chemical Industry Co., Ltd.). Compounds that can form complexes between metal ions can also be used as ion trapping agents. Examples of such compounds include triazole-based compounds, tetrazole-based compounds, and bipyridine-based compounds. Among these, a triazole-based compound is preferred from the viewpoint of the stability of the complex formed between the metal ions. Examples of such triazole-based compounds include 1,2,3-benzotriazole, 1- {N, N-bis (2-ethylhexyl) aminomethyl} benzotriazole, and carboxybenzene Benzotriazole, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-third-butylphenyl) -5-chlorobenzotriazole , 2- (2-hydroxy-3-tert-butyl-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3,5-di-tert-pentylphenyl) Benzotriazole, 2- (2-hydroxy-5-third octylphenyl) benzotriazole, 6- (2-benzotriazolyl) -4-third octyl-6'-third Butyl-4'-methyl-2,2'-methylenebisphenol, 1- (2,3-dihydroxypropyl) benzotriazole, 1- (1,2-dicarboxydiethyl) Benzotriazole, 1- (2-ethylhexylaminomethyl) benzotriazole, 2,4-ditripentyl-6-{(H-benzotriazol-1-yl) methyl } Phenol, 2- (2-hydroxy-5-third butylphenyl) -2H-benzotriazole, 3- [3-third butyl-4-hydroxy-5- (5-chloro-2H- Benzotriazol-2-yl) phenyl] octyl propionate, 2-ethylhexyl-3- [3-tert-butyl-4-hydroxy-5- (5-chloro-2H-benzotriazole- 2-yl) phenyl] propionate, 2- (2H-benzotriazol-2-yl) -6- (1-methyl-1-phenylethyl) -4- (1,1,3 , 3-tetramethylbutyl) phenol, 2- ( 2H-benzotriazol-2-yl) -4-third butylphenol, 2- (2-hydroxy-5-methylphenyl) benzotriazole, 2- (2-hydroxy-5-third Octylphenyl) -benzotriazole, 2- (3-tert-butyl-2-hydroxy-5-methylphenyl) -5-chlorobenzotriazole, 2- (2-hydroxy-3, 5-di-third-pentylphenyl) benzotriazole, 2- (2-hydroxy-3,5-di-third-butylphenyl) -5-chlorobenzotriazole, 2- [2-hydroxy- 3,5-bis (1,1-dimethylbenzyl) phenyl] -2H-benzotriazole, 2,2'-methylenebis [6- (2H-benzotriazol-2-yl ) -4- (1,1,3,3-tetramethylbutyl) phenol], 2- [2-hydroxy-3,5-bis (α, α-dimethylbenzyl) phenyl] -2H -Benzotriazole and methyl 3- [3- (2H-benzotriazol-2-yl) -5-tert-butyl-4-hydroxyphenyl] propanoate. Further, a specific hydroxyl-containing compound such as a hydroquinone compound, a hydroxyanthraquinone compound, or a polyphenol compound can also be used as an ion trapping agent. Specific examples of such a hydroxyl-containing compound include 1,2-benzenediol, alizarin, anthraquinol, tannin, gallic acid, methyl gallate, and pyrogallol.

The wafer mounting layer 12 in the film 10 may have a composition containing a thermosetting resin and a thermoplastic resin as a resin component, or may have a composition containing a thermoplastic resin having a thermosetting functional group that can react with a hardener to generate a bond. .

Examples of the thermosetting resin when the wafer mounting layer 12 has a composition containing a thermosetting resin and a thermoplastic resin include epoxy resin, phenol resin, amine resin, unsaturated polyester resin, and polyamine. Urethane resin, silicone resin, and thermosetting polyimide resin. The wafer mounting layer 12 may contain one type of thermosetting resin or two or more types of thermosetting resin. Epoxy resin tends to have a low content of ionic impurities, such as corrosion of semiconductor wafers, which may be the object of protection of the back surface protective film formed by the film 10 in the following manner. Therefore, the heat in the wafer mounting layer 12 of the film 10 A curable resin is preferred.

Examples of the epoxy resin in the wafer mounting layer 12 include those described above as the thermosetting resin when the laser marking layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. Phenol novolac epoxy resin, o-cresol novolac epoxy resin, biphenyl epoxy resin, trihydroxyphenylmethane epoxy resin, and tetraphenol ethane epoxy resin are used as hardeners. The phenol resin has sufficient reactivity and is excellent in heat resistance, so it is preferable as the epoxy resin in the wafer mounting layer 12.

As the phenol resin that can be used as the hardener of the epoxy resin in the wafer mounting layer 12, for example, the phenol resin described above as the hardener of the epoxy resin in the laser marking layer 11 is mentioned above. The wafer mounting layer 12 may contain one kind of phenol resin as a hardener of the epoxy resin, and may also contain two or more kinds of phenol resin as a hardener of the epoxy resin.

When the wafer mounting layer 12 contains an epoxy resin and a phenol resin as its hardener, the two resins are preferably 1 equivalent to the epoxy group in the epoxy resin, and the hydroxyl group in the phenol resin is preferably 0.5 to 2.0 equivalents, more preferably 0.8 to 1.2 equivalents. Such a configuration is preferable in that the curing reaction of the epoxy resin and the phenol resin is sufficiently advanced when the wafer mounting layer 12 is cured.

From the viewpoint of appropriately curing the wafer mounting layer 12, the content ratio of the thermosetting resin in the wafer mounting layer 12 is preferably 5 to 60% by mass, and more preferably 10 to 50% by mass.

The thermoplastic resin in the wafer mounting layer 12 is, for example, one that performs an adhesive function. When the wafer mounting layer 12 has a composition containing a thermosetting resin and a thermoplastic resin, the thermoplastic resin can be exemplified when the laser marking layer 11 has a composition containing a thermosetting resin and a thermoplastic resin. Thermoplastic resin narrator. The wafer mounting layer 12 may contain one kind of thermoplastic resin, or may contain two or more kinds of thermoplastic resins. The acrylic resin is preferred as the thermoplastic resin in the wafer mounting layer 12 because it has fewer ionic impurities and high heat resistance.

In a case where the wafer mounting layer 12 contains an acrylic resin as a thermoplastic resin, the acrylic resin is preferably a monomer unit derived from a (meth) acrylic acid ester in a mass ratio. As a (meth) acrylic acid ester constituting a monomer unit of such an acrylic resin, for example, the constituent sheet of the acrylic resin in the case where the acrylic resin is contained as the thermoplastic resin as the laser marking layer 11 described above can be used. (Meth) acrylate. As a constituent monomer of the acrylic resin in the wafer mounting layer 12, one (meth) acrylate may be used, or two or more (meth) acrylates may be used. In addition, in order to improve the cohesive force or heat resistance of the acrylic resin, for example, one or two or more other monomers capable of being copolymerized with a (meth) acrylate may be used as a constituent monomer. As such a monomer, for example, those described above as the other monomer capable of being copolymerized with the (meth) acrylic acid ester constituting the acrylic resin in the laser marking layer 11 can be used.

The acrylic resin contained in the wafer mounting layer 12 is preferably a copolymer of monomers appropriately selected from butyl acrylate, ethyl acrylate, acrylonitrile, acrylic acid, 2-ethylhexyl acrylate, and glycidyl acrylate. Thing. Such a structure in the film 10 which is a back surface protective film is preferable in that the adhesive property to a workpiece and the good cutting property described below in the cutting extension step are achieved simultaneously.

When the wafer mounting layer 12 has a composition containing a thermoplastic resin with a thermosetting functional group, as the thermoplastic resin, for example, an acrylic resin containing a thermosetting functional group can be used. The acrylic resin used to constitute the acrylic resin containing a thermosetting functional group is preferably a monomer unit derived from a (meth) acrylic acid ester in a mass ratio. As such a (meth) acrylate, for example, the same (meth) acrylate as described above as the constituent monomer of the acrylic resin contained in the laser mark layer 11 can be used. On the other hand, as a thermosetting functional group which comprises the acrylic resin containing a thermosetting functional group, a glycidyl group, a carboxyl group, a hydroxyl group, and an isocyanate group are mentioned, for example. Among these, glycidyl and carboxyl groups can be suitably used. In addition, a curing agent that can react with the thermosetting functional group in the acrylic resin containing the thermosetting functional group is selected. When the thermosetting functional group of the acrylic resin containing a thermosetting functional group is a glycidyl group, as the curing agent, the same phenol resin as described above as the curing agent for epoxy resin can be used.

The composition for forming the wafer mounting layer 12 is preferably free of a thermosetting catalyst. In the case where a thermosetting catalyst is formulated in the composition for forming the wafer mounting layer 12, as the thermosetting catalyst, for example, the heat tunable in the composition for forming a laser mark layer described above can be used. Hardened catalyst narrator.

The wafer mounting layer 12 may also contain a filler. Filling the wafer mounting layer 12 with filler is preferable in terms of adjusting the elastic modulus of the wafer mounting layer 12, the strength of the drop point, and the elongation at break. Examples of the filler in the wafer mounting layer 12 include those described above as the filler in the laser marking layer 11. The wafer mounting layer 12 may contain one kind of filler or two or more kinds of fillers. The filler may have various shapes such as a spherical shape, a needle shape, and a sheet shape. When the wafer mounting layer 12 contains a filler, the average particle diameter of the filler is preferably 0.005 to 10 μm, and more preferably 0.05 to 1 μm. A structure in which the average particle diameter of the filler is 10 μm or less is preferable in that a sufficient filler-adding effect is obtained in the wafer mounting layer 12 and heat resistance is secured. When the wafer mounting layer 12 contains a filler, the content of the filler is preferably 10% by mass or more, more preferably 15% by mass or more, and even more preferably 20% by mass or more. The content is preferably 50% by mass or less, more preferably 47% by mass or less, and even more preferably 45% by mass or less.

The wafer mounting layer 12 may contain a colorant. As the coloring agent in the wafer mounting layer 12, for example, the coloring agent described above as the coloring agent in the laser marking layer 11 may be mentioned. In terms of ensuring a high contrast between the marking portion formed with the laser mark and the other portions on the laser marking layer 11 side in the film 10 and achieving good visibility of the marking information, the wafer The mounting layer 12 preferably contains a black-based colorant. The wafer mounting layer 12 may contain one kind of coloring agent or two or more kinds of coloring agent. The content of the toner in the wafer mounting layer 12 is preferably 0.5% by weight or more, more preferably 1% by weight or more, and even more preferably 2% by weight or more. The content is preferably 10% by weight or less, more preferably 8% by weight or less, and even more preferably 5% by weight or less. These constitutions regarding the content of the colorant are preferable in terms of achieving the above-mentioned good visibility of the engraved information formed using the laser mark.

The wafer mounting layer 12 may optionally contain one or two or more other components. Examples of the other components include a flame retardant, a silane coupling agent, and an ion trapping agent specifically described above with respect to the laser marking layer 11.

The thickness of the film 10 having a laminated structure including the laser marking layer 11 and the wafer mounting layer 12 is preferably 8 μm or more, more preferably 10 μm or more, and preferably 20 μm or less, and more preferably 15 μm or less. The value of the ratio of the thickness of the laser marking layer 11 (the first layer) to the thickness of the wafer mounting layer 12 (the second layer) is preferably 0.2 to 4, more preferably 0.2 to 1.5, and even more preferably 0.3. ~ 1.3, more preferably 0.6 ~ 1.1.

The above film 10 (adhesive sheet as a back surface protective film) was tested on a film with a width of 2 mm under the conditions of an initial chuck distance of 16 mm, a temperature of -15 ° C, and a load increase rate of 1.2 N / min. The tensile strength in a tensile test performed on a flexible sheet test piece is 1.2 N or less, preferably 1.1 N or less, and more preferably 1 N or less. At the same time, the elongation at break of the film 10 in this tensile test (the ratio of the length of the extension at the break to the length before the extension) is 1.2% or less, preferably 1.1% or less, and more preferably 1% or less . The breaking strength and elongation at break can be measured in a tensile test using a TMA testing machine (trade name "TMA Q400", manufactured by TA Instruments). In this measurement, a test piece cut out from the film 10 and set on a test machine was used. After 5 minutes of holding at -15 ° C, the operating mode of the test machine was set to the tensile mode, as described above. The tensile test was performed under conditions of an initial distance of 16 mm between chucks, -15 ° C, and a load increasing speed of 1.2 N / min. The adjustment of the breaking strength and the elongation at break of the film 10 can be adjusted by adjusting the composition of the constituent monomers of the thermoplastic resin such as an acrylic resin contained in each layer in the film 10, or adjusting the thickness of each layer in the film 10. get on.

The base material 21 of the dicing tape integrated type adhesive sheet X in the dicing tape integrated type adhesive sheet X is an element which functions as a support in the dicing tape 20 or the dicing tape integrated type adhesive sheet X. The substrate 21 is, for example, a plastic substrate. As the plastic substrate, a plastic film can be suitably used. Examples of the constituent material of the plastic substrate include polyolefin, polyester, polyurethane, polycarbonate, polyetheretherketone, polyimide, polyetherimide, polyimide, and wholly aromatic. Groups of polyamines, polyvinyl chloride, polyvinylidene chloride, polyphenylene sulfide, aromatic polyamines, fluororesins, cellulose resins, and silicone resins. Examples of the polyolefin include low-density polyethylene, linear low-density polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, and homopolymers. Polypropylene, polybutene, polymethylpentene, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene- (meth) acrylic copolymer, ethylene- (meth) acrylate copolymer, ethylene-butyl Olefin copolymer, and ethylene-hexene copolymer. Examples of the polyester include polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate. The substrate 21 may include one type of material, or may include two or more types of materials. The base material 21 may have a single-layer structure or a multilayer structure. When the adhesive layer 22 on the base material 21 is UV-curable as described below, it is preferable that the base material 21 has UV permeability. When the substrate 21 includes a plastic film, it may be an unstretched film, a uniaxially stretched film, or a biaxially stretched film. In this embodiment, the substrate 21 is preferably a substrate made of polyvinyl chloride or a substrate made of ethylene-vinyl acetate copolymer.

When the dicing tape-integrated type adhesive sheet X is used to shrink the dicing tape 20 or the substrate 21 by, for example, local heating, it is preferable that the substrate 21 has heat shrinkability. In addition, when the substrate 21 includes a plastic film, the substrate 21 is preferably a biaxially stretched film in terms of enabling the dicing tape 20 or the substrate 21 to achieve isotropic thermal shrinkage. The heat shrinkage rate of the cut crystal strip 20 or the substrate 21 under the conditions of a heating temperature of 100 ° C. and a heat treatment time of 60 seconds is preferably 2 to 30%, more preferably 2 to 25%, and even better. It is 3 to 20%, and more preferably 5 to 20%. The thermal shrinkage rate refers to at least one thermal shrinkage rate in a so-called MD (Machine Direction) direction and a so-called TD (Transverse Direction) direction.

The surface on the side of the adhesive layer 22 in the base material 21 may also be subjected to a physical treatment, a chemical treatment, or a primer treatment for improving the adhesion with the adhesive layer 22. Examples of the physical treatment include a corona treatment, a plasma treatment, a sandblasting and extinction processing treatment, an ozone exposure treatment, a flame exposure treatment, a high-voltage electric shock exposure treatment, and an ionizing radiation treatment. Examples of the chemical treatment include a chromic acid treatment.

The thickness of the base material 21 is preferably 40 μm or more from the viewpoint of ensuring the strength for the base material 21 to function as a support in the dicing tape 20 or the dicing tape-integrated adhesive sheet X. , More preferably 50 μm or more, and even more preferably 60 μm or more. In addition, from the viewpoint of achieving moderate flexibility in the dicing tape 20 or the dicing tape-integrated adhesive sheet X, the thickness of the substrate 21 is preferably 200 μm or less, and more preferably 180 μm or less. It is more preferably 150 μm or less.

The adhesive layer 22 of the dicing tape 20 contains an adhesive. The adhesive may be an adhesive capable of intentionally reducing the adhesive force by an external action during the use of the dicing tape-integrated adhesive sheet X (adhesive capable of reducing adhesive force), or may be In the use of the dicing tape-integrated type adhesive sheet X, an adhesive agent (the adhesive agent does not reduce the adhesion force) that hardly decreases or does not decrease due to an external action. Regarding the use of a pressure-reducible adhesive or a pressure-reducible adhesive as the adhesive in the adhesive layer 22, a single-chip semiconductor wafer using a dicing tape-integrated adhesive sheet X may be used. The use method of the dicing tape-integrated type adhesive sheet X such as the method and condition of the tableting is appropriately selected.

In the case of using a pressure-reducible adhesive as the adhesive in the adhesive layer 22, during the use of the dicing tape-integrated adhesive sheet X, the use of the adhesive layer 22 separately shows relatively high The state of adhesion and the state showing relatively low adhesion. For example, in the case where the dicing tape-integrated adhesive sheet X is used in the following stretching steps, in order to suppress or prevent the film 10 from bulging or peeling from the adhesive layer 22, the state of high adhesive force of the adhesive layer 22 is used. On the other hand, in the following picking step for picking a semiconductor wafer with a film from the dicing tape 20 of the self-cutting tape integrated type adhesive sheet X, in order to easily pick up the semiconductor wafer with a film from the adhesive layer 22, The low adhesive state of the adhesive layer 22 is utilized.

Examples of such adhesives capable of reducing the adhesive force include, for example, an adhesive (radiation-curable adhesive) capable of being hardened by radiation irradiation during use of the dicing tape-integrated adhesive sheet X (radiation-curable adhesive) or heating and foaming. Adhesives, etc. In the adhesive layer 22 of this embodiment, one type of adhesive capable of reducing adhesive force may be used, or two or more types of adhesive capable of reducing adhesive force may be used. In addition, the entirety of the adhesive layer 22 may be formed of a pressure-reducible adhesive, or a part of the adhesive layer 22 may be formed of a pressure-reducible adhesive. For example, when the adhesive layer 22 has a single-layer structure, the entirety of the adhesive layer 22 may be formed of an adhesive with a reduced adhesive force, or it may be a specific part of the adhesive layer 22 (for example, as a workpiece bonding) The central area of the target area is formed by a pressure-reducible adhesive, and other parts (for example, the area where the ring frame is attached to the target area and located outside the central area) are formed by a non-reduced pressure-sensitive adhesive. . In the case where the adhesive layer 22 has a multilayer structure, all the layers constituting the multilayer structure may be formed of a pressure-reducible adhesive, or a part of the multilayer structure may be formed of a pressure-reducible adhesive. Formed.

Examples of the radiation-curable adhesive used for the adhesive layer 22 include adhesives of a type that hardens by irradiation with electron beam, ultraviolet rays, alpha rays, beta rays, gamma rays, or X-rays, and are particularly suitable. An adhesive (ultraviolet-curing adhesive) of a type hardened by ultraviolet irradiation is used.

Examples of the radiation-curable adhesive used for the adhesive layer 22 include base polymers such as acrylic polymers as acrylic adhesives, and radiation polymerizability with functional groups such as a radiation-polymerizable carbon-carbon double bond. Additive type radiation hardening adhesive of monomer component or oligomer component.

It is preferable that the said acryl-type polymer contains the monomer unit derived from a (meth) acrylic acid ester by the mass ratio. Examples of the (meth) acrylic acid ester as a monomer unit constituting the acrylic polymer, that is, the (meth) acrylic acid ester as the constituting monomer of the acrylic polymer include, for example, an alkyl (meth) acrylate, Cycloalkyl (meth) acrylate and aryl (meth) acrylate are more specifically the same as those described above for the acrylic resin in the laser marking layer 11 of the film 10 ( (Meth) acrylate. As a constituent monomer of the acrylic polymer, one (meth) acrylate may be used, or two or more (meth) acrylates may be used. As a constituent monomer of an acrylic polymer, 2-ethylhexyl acrylate and lauryl acrylate are mentioned preferably. In addition, the ratio of the (meth) acrylic acid ester in all the constituent monomers of the acrylic polymer is such that the adhesive layer 22 appropriately exhibits basic characteristics such as adhesion to the (meth) acrylic acid ester. It is preferably 40% by mass or more, and more preferably 60% by mass or more.

The acrylic polymer may contain, for example, monomer units derived from one or two or more other monomers capable of being copolymerized with a (meth) acrylate in order to improve its cohesion or heat resistance. Examples of such a monomer include a carboxyl group-containing monomer, an acid anhydride monomer, a hydroxyl group-containing monomer, an epoxy group-containing monomer, a sulfonic acid group-containing monomer, a phosphate group-containing monomer, acrylamide, and propylene. Nitrile is, more specifically, the exemplified above as the other monomer capable of being copolymerized with the (meth) acrylate of the acrylic resin in the laser marking layer 11 constituting the film 10.

The acrylic polymer may include a monomer unit derived from a polyfunctional monomer capable of copolymerizing with a monomer component such as a (meth) acrylate in order to form a crosslinked structure in a polymer skeleton thereof. Examples of such a polyfunctional monomer include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, Neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (methyl) Acrylate, polyglycidyl (meth) acrylate, polyester (meth) acrylate, and urethane (meth) acrylate. "(Meth) acrylate" means "acrylate" and / or "methacrylate". As a constituent monomer of the acrylic polymer, one kind of polyfunctional monomer may be used, or two or more kinds of polyfunctional monomers may be used. The ratio of the polyfunctional monomer in the total constituent monomers of the acrylic polymer is preferably such that the adhesive layer 22 appropriately exhibits basic characteristics such as adhesion to a (meth) acrylate. 40% by mass or less, more preferably 30% by mass or less.

The acrylic polymer can be obtained by polymerizing a raw material monomer for forming the acrylic polymer. Examples of the polymerization method include solution polymerization, emulsion polymerization, block polymerization, and suspension polymerization. From the viewpoint of a high degree of cleanliness in the method for manufacturing a semiconductor device using the dicing tape 20 or the dicing tape-integrated adhesive sheet X, the dicing tape 20 or the diced-strap integrated adhesive sheet is preferred. The low molecular weight substance in the adhesive layer 22 in X is small, so the number average molecular weight of the acrylic polymer is preferably 100,000 or more, more preferably 200,000 to 3 million.

In order to increase the number-average molecular weight of a base polymer such as an acrylic polymer, the adhesive layer 22 or the adhesive used to constitute it may contain, for example, an external crosslinking agent. Examples of the external crosslinking agent for reacting with a base polymer such as an acrylic polymer to form a crosslinking structure include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking Agent. The content of the external crosslinking agent in the adhesive layer 22 or the adhesive used to constitute it is preferably 5 parts by mass or less, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the base polymer.

Examples of the radiation-polymerizable monomer component for constituting the radiation-curable adhesive include (meth) acrylic acid urethane, trimethylolpropane tri (meth) acrylate, and pentaerythritol tris (methyl) Acrylate), pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, and 1,4-butanediol di (meth) acrylic acid ester. Examples of the radiation-polymerizable oligomer component constituting the radiation-curable adhesive include various types such as urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based. The oligomer is preferably one having a molecular weight of about 100 to 30,000. The total content of the radiation polymerizable monomer component or oligomer component in the radiation-curable adhesive is determined within a range in which the adhesive force of the adhesive layer 22 to be formed can be appropriately reduced, and is relative to an acrylic polymer, etc. 100 parts by mass of the base polymer, preferably 5 to 500 parts by mass, and more preferably 40 to 150 parts by mass. In addition, as the additive radiation-curable adhesive, for example, those disclosed in Japanese Patent Laid-Open No. 60-196956 can be used.

Examples of the radiation-hardening adhesive used for the adhesive layer 22 include functional groups such as a carbon-carbon double bond having a polymerizable side chain or a polymer main chain and a polymer polymer chain terminal having radiation polymerizability. Radiation-hardening adhesive based on the base polymer. Such an internal radiation-hardening adhesive is preferable in that it suppresses an unintended time-dependent change in the adhesive property caused by the movement of the low-molecular-weight component in the adhesive layer 22 to be formed.

As the base polymer contained in the internal radiation-curable adhesive, an acrylic polymer is preferably used as a basic skeleton. As the acrylic polymer constituting such a basic skeleton, the above-mentioned acrylic polymer can be used. As a method for introducing an acrylic polymer with a radiation-polymerizable carbon-carbon double bond, for example, a method in which a raw material monomer containing a monomer having a specific functional group (first functional group) is copolymerized to After the acrylic polymer is obtained, a compound having a specific functional group (second functional group) capable of reacting with the first functional group to be bonded and a radiation polymerizable carbon-carbon double bond is maintained at the carbon-carbon In the state of radiation polymerizability of a double bond, a condensation reaction or addition reaction with an acrylic polymer is performed.

Examples of the combination of the first functional group and the second functional group include a carboxyl group and an epoxy group, an epoxy group and a carboxyl group, a carboxyl group and an aziridinyl group, an aziridinyl group and a carboxyl group, a hydroxyl group and an isocyanate group, and isopropyl group. Cyanate and hydroxyl. Among these combinations, a combination of a hydroxyl group and an isocyanate group, or a combination of an isocyanate group and a hydroxyl group is preferable from the viewpoint of easiness of tracking the reaction. In addition, since it is technically difficult to produce a polymer having a highly reactive isocyanate group, from the standpoint of ease of production or acquisition of the acrylic polymer, the acrylic polymer side is more preferable. In the case where the first functional group is a hydroxyl group and the second functional group is an isocyanate group. In this case, examples of the isocyanate compound having a radiation polymerizable carbon-carbon double bond and an isocyanate group as a second functional group, that is, an isocyanate compound containing a radiation polymerizable unsaturated functional group include, for example ,: Methacrylic acid isocyanate, 2-methacryloxyethyl isocyanate (MOI), and m-isopropenyl-α, α-dimethylbenzyl isocyanate.

The radiation-curable adhesive used for the adhesive layer 22 preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include α-keto alcohol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, and dibenzene Ketone compounds, 9-oxosulfur Compounds, camphorquinone, haloketone, fluorenylphosphine oxide, and fluorenyl phosphate. Examples of the α-keto alcohol-based compound include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, α-hydroxy-α, α'-dimethylphenethyl Ketones, 2-methyl-2-hydroxyphenylacetone, and 1-hydroxycyclohexylphenyl ketone. Examples of the acetophenone-based compound include methoxyacetophenone, 2,2-dimethoxy-1,2-diphenylethane-1-one, and 2,2-diethoxybenzene. Ethyl ketone and 2-methyl-1- [4- (methylthio) -phenyl] -2-olinylpropane-1. Examples of the benzoin ether-based compound include benzoin diethyl ether, benzoin isopropyl ether, and anisole methyl ether. Examples of the ketal-based compound include benzophenone dimethyl ketal. Examples of the aromatic sulfonyl chloride-based compound include 2-naphthalenesulfonyl chloride. Examples of the photoactive oxime-based compound include 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime. Examples of the benzophenone-based compound include benzophenone, benzophenone benzoic acid, and 3,3'-dimethyl-4-methoxybenzophenone. As 9-oxysulfur Examples of compounds are 9-oxysulfur , 2-chloro9-oxysulfur 2-methyl 9-oxysulfur 2,4-dimethyl 9-oxosulfur Isopropyl 9-oxysulfur , 2,4-dichloro 9-oxysulfur , 2,4-diethyl 9-oxysulfur , And 2,4-diisopropyl 9-oxysulfur . The content of the photopolymerization initiator in the radiation-curable adhesive in the adhesive layer 22 is, for example, 0.05 to 20 parts by mass based on 100 parts by mass of the base polymer such as an acrylic polymer.

The above-mentioned heat-foamable adhesive for the adhesive layer 22 is an adhesive containing a component (foaming agent, heat-expandable microspheres, etc.) that expands or expands by heating. Examples of the foaming agent include various inorganic foaming agents and organic foaming agents. Examples of the heat-expandable microspheres include microspheres formed by encapsulating a substance that expands easily by heating in a shell. Examples of the inorganic foaming agent include ammonium carbonate, ammonium bicarbonate, sodium bicarbonate, ammonium nitrite, sodium boron hydride, and azides. Examples of the organic blowing agent include chlorofluoroalkanes such as trichloromonofluoromethane or dichloromonofluoromethane, azobisisobutyronitrile, azodimethylformamide, and azo such as barium azodicarboxylate. Compounds, hydrazine such as p-toluenesulfonylhydrazine or diphenylsulfonium-3,3'-disulfonylhydrazine, 4,4'-oxybis (benzenesulfonylhydrazine), allylbis (sulfonylhydrazine) Compounds, p-toluenesulfonylurea urea or 4,4'-oxybis (benzenesulfonamido urea) and other aminourea compounds, 5-phosphono-1,2,3,4-thiotris Compounds such as triazole and N, N'-dinitrosopentamethylenetetramine or N, N'-dimethyl-N, N'-dinitroso p-xylylenediamine and other N -A nitroso compound. Examples of the substance that is configured to constitute the thermally expandable microspheres as described above and swell easily by vaporization upon heating include isobutane, propane, and pentane. By using a coacervation method, an interfacial polymerization method, or the like, a substance that swells due to vaporization by heating is enclosed in a shell-forming substance to produce a thermally expandable microsphere. As the shell-forming substance, a substance that exhibits thermal melting properties or a substance that can be broken by the effect of thermal expansion of the enclosed substance can be used. Examples of such a substance include vinylidene chloride-acrylonitrile copolymer, polyvinyl alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, polyvinylidene chloride, and polyfluorene .

Examples of the non-reducible pressure-sensitive adhesives include, for example, pressure-sensitive adhesives in which the radiation-curable adhesive described in the above-mentioned adhesive-reducible pressure-sensitive adhesives is hardened by radiation irradiation, or so-called pressure-sensitive adhesives. Agent. Radiation-curable adhesives can show the adhesiveness caused by the polymer component even when the adhesive strength is reduced by radiation curing, depending on the type and content of the polymer component contained in the radiation-curable adhesive. In the use mode, the adhesive force that can be used to adhere to the adherend is exerted. In the adhesive layer 22 of this embodiment, one type of non-reducing adhesive may be used, or two or more types of non-reducing adhesive may be used. In addition, the entirety of the adhesive layer 22 may be formed of a non-reducing adhesive type, or a part of the adhesive layer 22 may be formed of a non-reducing adhesive type. For example, in the case where the adhesive layer 22 has a single-layer structure, the entirety of the adhesive layer 22 may be formed of a non-reduced adhesive, or as described above, a specific part of the adhesive layer 22 (such as a ring) The area of the bonding target area of the frame-like frame and the area outside the bonding target area of the wafer) is formed by a non-reducing adhesive, and other parts (for example, the central area of the bonding target area of the wafer) are adhered. Force-reducing adhesives are formed. In the case where the adhesive layer 22 has a multilayer structure, all layers constituting the multilayer structure may be formed of a non-reducing adhesive, or a part of the multilayer structure may be composed of a non-reducing adhesive. Formed.

On the other hand, as the pressure-sensitive adhesive used for the adhesive layer 22, for example, an acrylic adhesive or a rubber-based adhesive using an acrylic polymer as a base polymer can be used. In the case where the adhesive layer 22 contains an acrylic adhesive as a pressure-sensitive adhesive, the acrylic polymer as the base polymer of the acrylic adhesive preferably contains the largest amount of (methyl ) Acrylic monomer units. Examples of such an acrylic polymer include the acrylic polymer described above with respect to the radiation-curable adhesive.

The adhesive layer 22 or the adhesive for constituting the adhesive layer 22 may contain, in addition to the above-mentioned components, a cross-linking accelerator, an adhesion-imparting agent, an anti-aging agent, a colorant such as a pigment or a dye, and the like. The colorant may also be a compound that is colored by irradiation with radiation. Examples of such compounds include leuco dyes.

The thickness of the adhesive layer 22 is preferably 2 to 20 μm, more preferably 3 to 17 μm, and even more preferably 5 to 15 μm. Such a configuration is preferable, for example, in a case where the adhesive layer 22 contains a radiation-curable adhesive, in order to obtain a balance between the adhesion force of the adhesive layer 22 to the film 10 before and after radiation hardening.

The dicing tape-integrated adhesive sheet X having the above structure can be produced, for example, in the following manner.

In the production of the film 10 in the dicing tape-integrated adhesive sheet X, first, a resin film (the first resin film) constituting the laser marking layer 11 and a resin film (the first resin film constituting the wafer mounting layer 12) are separately produced. 2 resin film). The first resin film can be produced by applying a resin composition for forming a laser mark layer on a specific separator to form a resin composition layer, drying the composition layer by heating, and hardening. Examples of the separator include a polyethylene terephthalate (PET) film, a polyethylene film, a polypropylene film, and a release agent such as a fluorine-based release agent or a long-chain alkyl acrylate-based release agent. Surface-coated plastic film or paper. Examples of the coating method of the resin composition include roll coating, screen coating, and gravure coating. In the production of the first resin film, the heating temperature is, for example, 90 to 160 ° C, and the heating time is, for example, 2 to 4 minutes. On the other hand, the second resin film can be produced by applying a resin composition for forming a wafer mounting layer to a specific spacer to form a resin composition layer, and then combining the resin composition layer by heating. The layers were dry. In the production of the second resin film, the heating temperature is, for example, 90 to 150 ° C, and the heating time is, for example, 1 to 2 minutes. In the above manner, the first and second resin films described above can be produced in the form of a separator. Then, the exposed surfaces of the first and second resin films are bonded to each other. Thereby, the above-mentioned film 10 having a laminated structure of the laser marking layer 11 and the wafer mounting layer 12 is manufactured.

The dicing tape 20 of the dicing tape integrated type adhesive sheet X can be produced by providing an adhesive layer 22 on the prepared substrate 21. For example, the resin substrate 21 can be produced by a calendering film method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a coextrusion method, and a dry lamination method. Film method. If necessary, a specific surface treatment is performed on the film or substrate 21 after film formation. When the adhesive layer 22 is formed, for example, after preparing an adhesive composition for forming an adhesive layer, the composition is first coated on a substrate 21 or a specific spacer to form an adhesive composition layer. Examples of the method for applying the adhesive composition include roll coating, screen coating, and gravure coating. Next, in the adhesive composition layer, if necessary, it is dried by heating, and if necessary, a crosslinking reaction is caused. The heating temperature is, for example, 80 to 150 ° C, and the heating time is, for example, 0.5 to 5 minutes. In the case where the adhesive layer 22 is formed on the separator, the adhesive layer 22 accompanying the separator is adhered to the substrate 21, and then the separator is peeled off. Thereby, the above-mentioned dicing tape 20 having a laminated structure of the substrate 21 and the adhesive layer 22 is manufactured.

In the production of the dicing tape-integrated adhesive sheet X, secondly, the laser marking layer 11 side of the film 10 is bonded to the adhesive layer 22 side of the dicing tape 20. The bonding temperature is, for example, 30 to 50 ° C, and the bonding pressure (linear pressure) is, for example, 0.1 to 20 kgf / cm. In the case where the adhesive layer 22 contains the radiation hardening adhesive as described above, the adhesive layer 22 may be irradiated with radiation such as ultraviolet rays before the bonding, or may be adhered from the side of the substrate 21 after the bonding The agent layer 22 is irradiated with radiation such as ultraviolet rays. Alternatively, such a radiation may not be performed during the manufacturing process of the dicing tape-integrated adhesive sheet X (in this case, the adhesive may be used during the use of the dicing-belt-integrated adhesive sheet X. Layer 22 is radiation hardened). When the adhesive layer 22 is an ultraviolet curing type, the ultraviolet irradiation amount for curing the adhesive layer 22 is, for example, 50 to 500 mJ / cm ² . The irradiated area (irradiated area R) in the dicing tape-integrated adhesive sheet X where the adhesive force reduction measure of the adhesive layer 22 is performed is the area of the adhesive film 10 of the adhesive layer 22 as shown in FIG. 1 The area other than its periphery.

In the above manner, a dicing tape-integrated adhesive sheet X can be produced. In the dicing tape-integrated adhesive sheet X, a separator (not shown) may be provided on the film 10 side so as to cover at least the film 10. When the size of the film 10 is smaller than the adhesive layer 22 of the dicing tape 20 and there is an area where the adhesive layer 22 does not adhere to the film 10, for example, the separator may also cover at least the form of the film 10 and the adhesive layer 22 Settings. The separator is an element for protecting the film 10 or the adhesive layer 22 from being exposed, and is peeled from the film when the dicing tape-integrated adhesive sheet X is used.

2 to 7 show an example of a method for manufacturing a semiconductor device using the above-mentioned dicing tape-integrated adhesive sheet X.

In this semiconductor device manufacturing method, first, as shown in FIGS. 2 (a) and 2 (b), a modified region 30 a is formed on a semiconductor wafer W. The semiconductor wafer W includes a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been fabricated on the first surface Wa side of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T1 having the adhesive surface T1a is bonded to the first surface Wa side of the semiconductor wafer W, the semiconductor wafer W is held in the wafer processing tape T1. From the side opposite to the wafer processing tape T1, the semiconductor wafer W is irradiated with laser light having a condensing point directed toward the inside of the wafer along its predetermined division line, and a modification is formed in the semiconductor wafer W by the ablation by multiphoton absorption.质 tent 30a. The modified region 30a is a fragile region for separating the semiconductor wafer W into a semiconductor wafer unit. A method of forming a modified region 30a on a predetermined division line by laser light irradiation in a semiconductor wafer is described in detail in, for example, Japanese Patent Laid-Open No. 2002-192370. Therefore, laser light irradiation in this embodiment The conditions are appropriately adjusted within the range of the following conditions, for example.

[Laser light irradiation conditions] (A) Semiconductor laser Laser light source laser excitation Nd: YAG (Neodymium-doped Yttrium Aluminium Garnet, neodymium-doped yttrium aluminum garnet) laser wavelength of 1064 nm laser light spot cross-sectional area of 3.14 × 10 ^{- 8} cm ² oscillating form Q switching pulse repetition frequency below 100 kHz Pulse width below 1 μs Output laser quality below TEM00 Polarization characteristics Linear polarization (B) Condensing lens magnification 100 times or less NA 0.55 Transmission for laser light wavelength 100% or less (C) The moving speed of the stage on which the semiconductor substrate is placed is 280 mm / s or less

Next, in a state where the semiconductor wafer W is held by the wafer processing tape T1, the semiconductor wafer W is thinned to a specific thickness by a grinding process from the second surface Wb, as shown in FIG. 2 (c ), A semiconductor wafer 30A that can be singulated into a plurality of semiconductor wafers 31 is formed (wafer thinning step). In the semiconductor wafer 30A, the modified region 30a is exposed on the second surface Wb side.

Next, as shown in FIG. 3 (a), the semiconductor wafer 30A held on the wafer processing tape T1 is bonded to the film 10 of the dicing tape-integrated adhesive sheet X or the wafer mounting layer 12 thereof. Thereafter, as shown in FIG. 3 (b), the wafer processing tape T1 is peeled from the semiconductor wafer 30A.

For example, from the side of the base material 21 of the dicing tape 20, the laser marking layer 11 of the film 10 in the dicing tape integrated type adhesive sheet X is irradiated with laser to perform laser marking (laser marking step) . With this laser mark, various information such as text information or graphic information is given to each semiconductor element which is subsequently singulated into a semiconductor wafer. In this step, a plurality of semiconductor elements in the semiconductor wafer 30A can be efficiently laser-marked together in a laser-marking process. Examples of the laser used in this step include a gas laser and a solid laser. Examples of the gas laser include a carbon dioxide laser (CO ₂ laser) and an excimer laser. Examples of the solid laser include Nd: YAG laser.

In the case where the adhesive layer 22 in the dicing tape-integrated adhesive sheet X is a radiation-hardening adhesive layer, it can also replace the above-mentioned radiation during the manufacturing process of the dicing tape-integrated adhesive sheet X. After bonding the semiconductor wafer 30A to the film 10, the adhesive layer 22 is irradiated with radiation such as ultraviolet rays from the side of the substrate 21. The irradiation amount is, for example, 50 to 500 mJ / cm ² . The region where the dicing tape-integrated adhesive sheet X is irradiated as a measure for reducing the adhesive force of the adhesive layer 22 (irradiated region R shown in FIG. 1) is, for example, the region of the bonding film 10 of the adhesive layer 22 Other than its periphery.

Next, after attaching the ring frame 41 to the adhesive layer 22 in the dicing tape-integrated adhesive sheet X, as shown in FIG. 4 (a), the dicing tape with the semiconductor wafer 30A is attached. The integrated adhesive sheet X is fixed to the holder 42 of the extension device.

Next, as shown in FIG. 4 (b), the first stretching step (cooling stretching step) under relatively low temperature conditions is performed, the semiconductor wafer 30A is singulated into a plurality of semiconductor wafers 31, and the dicing tape is integrated. Then, the film 10 of the sexual sheet X is cut into a small film 10 ′ to obtain a semiconductor wafer 31 with a film. In this step, the hollow cylinder-shaped jacking member 43 provided in the extension device abuts on the dicing tape 20 at the lower side of the dicing tape-integrated adhesive sheet X in the figure, and rises to attach a semiconductor crystal. The dicing tape 20 of the round 30A dicing tape-integrated adhesive sheet X extends in a two-dimensional direction including the semiconductor wafer 30A in the radial direction and the circumferential direction. This elongation is performed under the condition that a tensile stress of, for example, 1 to 100 MPa is generated in the dicing tape 20. The temperature condition in this step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The extension speed (the speed at which the jacking member 43 rises) in this step is, for example, 1 to 500 mm / second. The amount of extension in this step (the distance the jacking member 43 rises) is, for example, 50 to 200 mm. By such a cooling and extending step, the film 10 of the dicing tape-integrated adhesive sheet X is cut into small pieces of film 10 'to obtain a film-attached semiconductor wafer 31. Specifically, in this step, a crack is formed in the fragile modified region 30 a in the semiconductor wafer 30A, and singulation to the semiconductor wafer 31 occurs. At the same time, in this step, in the film 10 in close contact with the adhesive layer 22 of the dicing tape 20 to be extended, the deformation of each region of the semiconductor wafer 30A in close contact with each semiconductor wafer 31 is suppressed, and the other On the other hand, the tensile stress generated in the dicing tape 20 acts on the portion facing the crack formation portion of the wafer in a state where such deformation suppression effect is not generated. As a result, the portion of the film 10 facing the crack formation portion facing the semiconductor wafer 31 was cut. After this step, as shown in FIG. 4 (c), the jacking member 43 is lowered to release the extended state of the dicing tape 20.

Next, as shown in FIG. 5 (a), the second stretching step under relatively high temperature conditions is performed, and the distance (separation distance) between the film-attached semiconductor wafers 31 is increased. In this step, the hollow cylinder-shaped jacking member 43 provided in the stretching device is raised again, and the cut band 20 of the cut band integrated type adhesive sheet X is extended. The temperature condition in the second stretching step is, for example, 10 ° C or higher, and preferably 15 to 30 ° C. The extension speed (the speed at which the jacking member 43 rises) in the second extension step is, for example, 0.1 to 10 mm / second. The extension amount in the second extension step is, for example, 3 to 16 mm. In this step, the separation distance of the film-attached semiconductor wafer 31 is enlarged to such an extent that the film-attached semiconductor wafer 31 can be appropriately picked from the dicing tape 20 in the following picking step. After this step, as shown in FIG. 5 (b), the jacking member 43 is lowered to release the extended state of the dicing tape 20. From the viewpoint of suppressing the separation distance of the semiconductor wafer 31 with a film on the dicing tape 20 from being narrowed after the stretched state is released, it is preferable to hold the diced tape 20 to a larger area than the semiconductor wafer 31 before the unclamped state is released. The outer portion is heated to shrink it.

Secondly, after the cleaning step of washing the semiconductor wafer 31 side with the film-attached semiconductor wafer 31 with a cleaning solution such as water as needed, as shown in FIG. Film of the semiconductor wafer 31 (pickup step). For example, the semiconductor wafer 31 with a film to be picked up is held on the lower side of the dicing tape 20 by lifting the pin member 44 of the picking mechanism and jacking the dicing tape 20 therebetween, and then sucked and held by the suction jig 45. . In the picking-up step, the jacking speed of the pin member 44 is, for example, 1 to 100 mm / sec, and the jacking amount of the pin member 44 is, for example, 50 to 3000 μm.

Next, as shown in FIG. 7, the semiconductor wafer 31 with a film is flip-chip mounted on the mounting substrate 51. Examples of the mounting substrate 51 include a lead frame, a TAB (Tape Automated Bonding) film, and a wiring substrate. The semiconductor wafer 31 is electrically connected to the mounting substrate 51 via a bump 52. Specifically, an electrode pad (not shown) included in the circuit formation surface side of the semiconductor wafer 31 and a terminal portion (not shown) included in the mounting substrate 51 are electrically connected through the bump 52. The bump 52 is, for example, a solder bump. A thermally cured underfill 53 is interposed between the semiconductor wafer 31 and the mounting substrate 51. For example, flip-chip mounting of the semiconductor wafer 31 to the mounting substrate 51 is achieved by a so-called reflow step in a state where the mounting substrate 51 is accompanied by a semiconductor wafer 31 with a film attached thereto.

In the above manner, a semiconductor device in which a film 10 'as a protective film is provided on the back surface of the semiconductor wafer 31 can be manufactured.

In the method for manufacturing a semiconductor device, instead of the above-mentioned configuration in which the semiconductor wafer 30A is bonded to the dicing tape-integrated adhesive sheet X, the semiconductor wafer 30B manufactured as follows may be bonded to the dicing tape. Integrated adhesive sheet X.

In the manufacturing of the semiconductor wafer 30B, first, as shown in FIGS. 8 (a) and 8 (b), a dividing groove 30 b is formed in the semiconductor wafer W (dividing groove forming step). The semiconductor wafer W includes a first surface Wa and a second surface Wb. Various semiconductor elements (not shown) have been produced on the side of the first surface Wa of the semiconductor wafer W, and wiring structures and the like (not shown) required for the semiconductor elements have been formed on the first surface Wa. In this step, after the wafer processing tape T2 having the adhesive surface T2a is bonded to the second surface Wb side of the semiconductor wafer W, the semiconductor wafer W is held in the wafer processing tape T2, A rotating blade such as a dicing device is used to form a dividing groove 30 b of a specific depth on the first surface Wa side of the semiconductor wafer W. The division groove 30b is a space for separating the semiconductor wafer W into a semiconductor wafer unit (the division groove 30b is schematically represented by a thick line in FIGS. 8 and 9).

Next, as shown in FIG. 8 (c), the wafer processing tape T3 having the adhesive surface T3a is bonded to the first surface Wa side of the semiconductor wafer W, and the wafer processing tape T2 is removed from the semiconductor wafer W. Peel off.

Next, as shown in FIG. 8 (d), the semiconductor wafer W is thinned to a specific thickness by a grinding process from the second surface Wb while the semiconductor wafer W is held by the wafer processing tape T3. (Wafer thinning step). The grinding processing can be performed using a grinding processing device equipped with a grinding stone. With this wafer thinning step, in this embodiment, a semiconductor wafer 30B that can be singulated into a plurality of semiconductor wafers 31 is formed. Specifically, the semiconductor wafer 30B includes a portion (connection portion) where the portion of the wafer that is singulated into a plurality of semiconductor wafers 31 is connected on the second surface Wb side. The thickness of the connecting portion of the semiconductor wafer 30B, that is, the distance between the second surface Wb of the semiconductor wafer 30B and the front end on the second surface Wb side of the dividing groove 30b is, for example, 1 to 30 μm.

9 (a) and 9 (b) specifically show a first stretching step (cooling stretching step) performed after bonding the semiconductor wafer 30B to the dicing tape-integrated adhesive sheet X. In this step, the hollow cylinder-shaped jacking member 43 provided in the extension device abuts on the dicing tape 20 on the lower side of the dicing tape-integrated adhesive sheet X in the figure, and rises to attach the semiconductor wafer. The dicing tape 20 of the 30C dicing tape-integrated adhesive sheet X extends in a two-dimensional direction including the semiconductor wafer 30B in the radial direction and the circumferential direction. This elongation is performed under the condition that a tensile stress of, for example, 15 to 32 MPa is generated in the dicing tape 20. The temperature condition in the cooling and stretching step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The extension speed (the speed at which the jacking member 43 rises) in the cooling extension step is, for example, 0.1 to 100 mm / second. The amount of extension in the cooling and extending step is, for example, 3 to 16 mm.

In this step, the semiconductor wafer 30B is cut at a thin-walled and easily cracked portion, and singulation into the semiconductor wafer 31 occurs. At the same time, in this step, in the film 10 which is in close contact with the adhesive layer 22 of the dicing tape 20 to be extended, the deformation of each region in which each semiconductor wafer 31 is in close contact is suppressed. In the portion where the 31 divided grooves face each other, the tensile stress generated in the dicing tape 20 functions in a state where such deformation suppression effect is not generated. As a result, a portion of the film 10 facing the division groove between the semiconductor wafer 31 and the semiconductor wafer 31 was cut. The thus-obtained film-attached semiconductor wafer 31 is a mounting step in a semiconductor device manufacturing process after the pick-up step described above with reference to FIG. 6.

In the method for manufacturing a semiconductor device, the wafer thinning step shown in FIG. 10 may be performed instead of the wafer thinning step described above with reference to FIG. 8 (d). After the process described above with reference to FIG. 8 (c), in the wafer thinning step shown in FIG. 10, the semiconductor wafer W is held in the wafer processing tape T3 by The grinding process of the two-sided Wb thins the wafer to a specific thickness to form a semiconductor wafer divided body 30C including a plurality of semiconductor wafers 31 and held in the wafer processing tape T3. In this step, the following method (the first method) may be adopted, that is, the wafer is ground until the dividing groove 30b itself is exposed on the second surface Wb side, or the following method (the second method) may be adopted, that is, from the first method The wafer on the second surface Wb is ground to the front of the division groove 30b, and thereafter, a crack is generated between the division groove 30b and the second surface Wb by the pressing force of the self-rotating grinding stone on the wafer, thereby forming a semiconductor wafer. Split body 30C. Depending on the method used, the depth of the dividing groove 30b formed as described above with reference to Figs. 8 (a) and 8 (b) from the first surface Wa is appropriately determined. In FIG. 10, the division groove 30b which passed the 1st method, or the division groove 30b which passed the 2nd method, and the crack connected to it are shown typically with a thick line. After the semiconductor wafer split body 30C produced in this manner is bonded to the dicing tape-integrated adhesive sheet X instead of the semiconductor wafer 30A, the steps described above with reference to FIGS. 3 to 6 may be performed.

FIGS. 11 (a) and 11 (b) specifically show a first stretching step (cooling stretching step) performed after bonding the semiconductor wafer split body 30C to the dicing tape-integrated adhesive sheet X. In this step, the hollow cylinder-shaped jacking member 43 provided in the extension device abuts on the dicing tape 20 on the lower side of the dicing tape-integrated adhesive sheet X in the figure, and rises to attach the semiconductor crystal The dicing tape integrated type 20 of the circular cut body 30C has the dicing tape 20 of the adhesive sheet X extending in a two-dimensional direction including the semiconductor wafer dicing body 30C in the radial direction and the circumferential direction. This elongation is performed under the condition that a tensile stress of, for example, 1 to 100 MPa is generated in the dicing tape 20. The temperature condition in this step is, for example, 0 ° C or lower, preferably -20 to -5 ° C, more preferably -15 to -5 ° C, and even more preferably -15 ° C. The extension speed (the speed at which the jacking member 43 rises) in this step is, for example, 1 to 500 mm / second. The amount of extension in this step is, for example, 50 to 200 mm. By such a cooling and extending step, the film 10 of the dicing tape-integrated adhesive sheet X is cut into a small film 10 ′ to obtain a film-attached semiconductor wafer 31. Specifically, in this step, in the film 10 which is in close contact with the adhesive layer 22 of the dicing tape 20 to be extended, the deformation of each region where the semiconductor wafer 31 is in close contact with each semiconductor wafer 31 is suppressed, and On the one hand, the tensile stress generated in the dicing tape 20 functions at a portion facing the dividing groove 30b between the semiconductor wafer 31 and the state where the deformation suppressing effect is not generated. As a result, a portion of the film 10 facing the dividing groove 30 b between the film 10 and the semiconductor wafer 31 is cut. The film-attached semiconductor wafer 31 thus obtained is subjected to the mounting step in the manufacturing process of the semiconductor device after the pick-up step described above with reference to FIG. 6.

Regarding the film 10 (adhesive sheet as a back surface protective film) in the dicing tape-integrated adhesive sheet X that can be used in the semiconductor device manufacturing process as described above, for example, the distance between the initial chucks is 16 The tensile strength of a film test piece (adhesive sheet test piece) with a width of 2 mm under a condition of mm, -15 ° C, and a load increase rate of 1.2 N / min is 1.2 N or less, preferably 1.1 N or less, more preferably 1 N or less. Such a configuration, for example, is obtained when the semiconductor wafer 31 with a film is obtained in the manufacturing process of the semiconductor device as described above, and the slicing tape-integrated adhesive sheet X is used to perform the cutting extension step (the first extension step described above). It is preferable in terms of suppressing the cutting force that should be applied to the film 10 in order to cut the film 10 on the dicing tape 20.

Regarding the film 10 in the dicing tape-integrated adhesive sheet X (adhesive sheet as a back surface protective film), as described above, the distance between the initial chucks is 16 mm, -15 ° C, and the load increasing speed is 1.2 N. The elongation at break in a tensile test performed on a film test piece (adhesive sheet test piece) having a width of 2 mm under a condition of 1 mm / min is 1.2% or less, preferably 1.1% or less, and more preferably 1% or less. Such a configuration, for example, is obtained when the semiconductor wafer 31 with a film is obtained in the manufacturing process of the semiconductor device as described above, and the slicing tape-integrated adhesive sheet X is used to perform the cutting extension step (the first extension step described above). It is preferable in terms of suppressing the stretched length required for cutting the film 10 on the dicing tape 20.

As described above, the dicing tape-integrated adhesive sheet X is better for suppressing the cutting force that should be applied to the film 10 in order to cut the film 10 on the dicing tape 20, and for suppressing the film for cutting. A stretched length of 10 is preferred. Such a dicing tape-integrated adhesive sheet X is suitable for achieving good severing of the film 10 when it is used in the severing extension step.

As described above, the film 10 in the dicing tape-integrated adhesive sheet X has a laser marking layer 11 (first layer) including an adhesive layer 22 that is in close contact with the dicing tape 20 in a peelable manner, and the above A laminated structure of the wafer mounting layer 12 (second layer). Such a structure is suitable for individually exhibiting the characteristics required for the side surface of the dicing tape adhesive layer in the film 10 and the characteristics required for the surface for bonding workpieces opposite to the surface. As described above, the value of the ratio of the thickness of the laser marking layer 11 to the thickness of the wafer mounting layer 12 is preferably 0.2 to 4, more preferably 0.2 to 1.5, more preferably 0.3 to 1.3, and even more preferably 0.6 to 1.1. Such a configuration is preferable in that the functions required for the laser marking layer 11 (the first layer) and the wafer mounting layer 12 (the second layer) in the film 10 are simultaneously achieved.

The dicing tape-integrated adhesive sheet X of this embodiment is a dicing tape-integrated back protective film. As described above, the laser marking layer 11 has thermosetting properties and the wafer mounting layer 12 exhibits thermoplasticity. The laser marking layer 11 has a thermosetting property. When the surface of the laser marking layer 11 of the film 10 is subjected to high-temperature processes such as a so-called re-soldering step after the marking using the laser marking is performed, it is suitable to ensure the visual recognition of the marking information. Sex. In addition, the laser marking layer 11 has thermosetting properties, and the wafer mounting layer 12 has a thermoplastic composition suitable for achieving good cutting of the film 10 in the cutting extension step. That is, the above-mentioned configuration in which the laser marking layer 11 in the film 10 has thermosetting properties and the wafer mounting layer 12 exhibits thermoplasticity is compared with the film 10 in terms of ensuring the visibility of the engraved information and achieving good severability. good.

In the dicing tape-integrated adhesive sheet X, the thickness of the film 10 as described above is preferably 8 μm or more, more preferably 10 μm or more, and preferably 20 μm or less, and more preferably 15 μm or less. Such a configuration is preferable in that the above-mentioned good severability of the film 10 is achieved. [Example]

[Example 1] <Production of the back surface protective film> In the production of the back surface protective film in the dicing tape-integrated adhesive sheet, first, a first resin film constituting a laser marking layer (LM layer) and A second resin film constituting a wafer mounting layer (WM layer).

In the production of the first resin film, first, an acrylic resin A ₁ (trade name "Teisan Resin SG-P3", weight average molecular weight of 850,000, glass transition temperature Tg of 12 ° C, manufactured by Nagase chemteX Co., Ltd.) 100 parts by mass, epoxy resin B ₁ (trade name "KI-3000-4", manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) 51.5 parts by mass, epoxy resin B ₂ (trade name "JER YL980", Mitsubishi Chemical Corporation) 22 parts by mass, phenol resin C ₁ (trade name "MEH7851-SS", manufactured by Meiwa Chemical Co., Ltd.) 76.5 parts by mass, filler (trade name "SO-25R", silicon dioxide, average particle size 0.5 μm , Manufactured by Admatechs Co., Ltd.) 187.5 parts by mass, black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 15 parts by mass, and thermosetting catalyst (trade name "Curezol 2PZ", Shikoku 22 parts by mass of the product is added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 36% by mass. Next, the resin composition was applied on a polysiloxane release surface of a PET separator (thickness: 50 μm) having a polysiloxane release surface using a dispenser to form a resin composition layer. Next, the composition layer was dried and thermally cured by heating at 130 ° C for 2 minutes, and a first resin film (film constituting a laser marking layer) having a thickness of 8 μm was produced on a PET spacer.

In the production of the second resin film, first, 100 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase chemteX Co., Ltd.) and epoxy resin B ₃ (trade name "EPPN- "501HY", manufactured by Nippon Kayaku Co., Ltd.) 65.5 parts by mass, phenol resin C ₂ (trade name "MEH7851-H", manufactured by Meiwa Chemical Co., Ltd.) 84.5 parts by mass, filler (trade name "SO-25R", two Silicon oxide, with an average particle diameter of 0.5 μm, manufactured by Admatechs Co., Ltd., 177 parts by mass, and 15 parts by mass of a black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) were added to methyl ethyl The ketone was mixed, and a resin composition having a solid content concentration of 36% by mass was obtained. Next, the resin composition was applied on a polysiloxane release surface of a PET separator (thickness: 50 μm) having a polysiloxane release surface using a dispenser to form a resin composition layer. Next, the composition layer was dried by heating at 130 ° C for 2 minutes, and an uncured second resin film (film constituting a wafer mounting layer) having a thickness of 7 μm was produced on a PET spacer.

Using a laminator, the first resin film on the PET separator and the second resin film on the PET separator were bonded together. Specifically, the exposed surfaces of the first and second resin films were bonded to each other under conditions of a temperature of 100 ° C and a pressure of 0.85 MPa. In the above manner, the back surface protective film of Example 1 was produced. The composition of the laser marking layer (LM layer) and the wafer mounting layer (WM layer) in Example 1 and each of the following Examples and Comparative Examples is shown in Tables 1 and 2 (in Tables 1 and 2, they represent The unit of each numerical value of the composition of each layer is the relative "mass part" in the layer).

<Creation of cut crystal strips> In a reaction vessel provided with a cooling tube, a nitrogen introduction tube, a thermometer, and a stirring device, 100 parts by mass of 2-ethylhexyl acrylate and 19 parts by mass of 2-hydroxyethyl acrylate were polymerized. A mixture of 0.4 parts by mass of benzamidine peroxide as an initiator and 80 parts by mass of toluene as a polymerization solvent was stirred at 60 ° C for 10 hours under a nitrogen atmosphere (polymerization reaction). Thereby, a polymer solution containing the acrylic polymer P ₁ was obtained. Next, a mixture containing the polymer solution containing the acrylic polymer P ₁ , 2-methacryloxyethyl isocyanate (MOI), and dibutyltin dilaurate as an addition reaction catalyst was mixed in It stirred at 50 degreeC in air atmosphere for 60 hours (addition reaction). To the reaction solution, the formulation amount of the MOI with respect to the acrylic polymer P ₁₁₀₀ parts by mass of 12 parts by mass, the blending amount of di-butyl tin acrylic polymer P with respect to ₁₁₀₀ parts by mass 0.1 parts by mass of . By this addition reaction, a polymer solution containing an acrylic polymer P ₂ having a methacrylate group in a side chain is obtained. Next, ₂ parts by mass of a polyisocyanate compound (trade name "Coronate L", manufactured by Tosoh Co., Ltd.) and 2 parts by mass of photopolymerization with 100 parts by mass of the acrylic polymer P ₂ were added to the polymer solution. An initiator (trade name "Irgacure 369", manufactured by BASF) and toluene were mixed and mixed to obtain an adhesive composition having a solid content concentration of 28% by mass. Next, using an applicator, the adhesive composition was coated on the silicone release surface with a PET separator (thickness: 50 μm) having a silicone release surface, to form an adhesive composition layer. Next, the composition layer was heated and dried at 120 ° C. for 2 minutes to form an adhesive layer having a thickness of 5 μm on a PET separator. Next, using a bonding machine, a base material made of ethylene-vinyl acetate copolymer (EVA) (trade name "NRW # 125", thickness 125 μm, manufactured by Gunze Co., Ltd.) was bonded to the adhesive at room temperature. The exposed side of the layer. Then, the bonded body was stored at 23 ° C. for 72 hours. In the above manner, a cut crystal band is produced.

<Creation of the back-surface protective film with integrated crystal cutting tape> The back-surface protective film of Example 1 with a PET spacer was punched into a 330 mm diameter circle. The above-mentioned cut crystal band with a PET spacer was punched into a circle having a diameter of 370 mm. Then, the PET spacer on the laser marking layer side is peeled off from the back protective film, and the PET spacer is peeled off from the dicing tape, and then the laser marking layer side exposed on the back protective film is cut off with the cutting machine using a laminator. The side of the adhesive layer exposed by the crystal ribbon is bonded. In this bonding, the bonding speed was set to 10 mm / min, the temperature condition was set to 40 ° C, and the pressure condition was set to 0.15 MPa. In addition, the bonding is performed while the position alignment is performed so that the center of the dicing tape is aligned with the center of the back protective film. In the above manner, a dicing tape-integrated back surface protective film of Example 1 having a laminated structure including a dicing tape and a back surface protective film was produced.

[Example 2] In the production of the second resin film (resin film constituting the wafer mounting layer), an acrylic resin A ₂ (trade name "Teisan Resin SG-N50") was used, and the weight average molecular weight was 450,000. The glass was transferred temperature Tg of 0 ℃, Nagase chemteX Co., Ltd.) ₁₁₀₀ parts by mass 100 parts by mass instead of the acrylic resin A, and the filler (trade name "SO-25R", Admatechs Co., Ltd.) the content of the mass to 217 Except for 177 parts by mass, the cut-crystal-belt-integrated back protective film of Example 2 was produced in the same manner as the cut-crystal-belt-integrated back protective film of Example 1.

[Example 3] In the production of the second resin film (resin film constituting the wafer mounting layer), 100 mass of acrylic resin A ₂ (trade name "Teisan Resin SG-N50", manufactured by Nagase chemteX Co., Ltd.) was used. Parts instead of 100 parts by mass of acrylic resin A ₁ and the content of filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) was set to 265 parts by mass instead of 177 parts by mass. The dicing tape-integrated back protective film of 1 was produced in the same manner as in the dicing tape-integrated back protective film of Example 3.

[Example 4] In the production of the second resin film (resin film constituting the wafer mounting layer), an acrylic resin A ₃ (trade name "Teisan Resin SG-708-6") was used, and the weight average molecular weight was 700,000. The glass transition temperature Tg is 4 ° C, 100 parts by mass of Nagase chemteX Co., Ltd.) instead of 100 parts by mass of acrylic resin A ₁ and the content of the filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) is set to Except for 265 parts by mass, instead of 177 parts by mass, the dicing tape-integrated back protective film of Example 4 was produced in the same manner as the dicing tape-integrated back protective film of Example 1.

[Example 5] In the production of the second resin film (resin film constituting the wafer mounting layer を), an acrylic resin A ₄ (trade name "Teisan Resin SG-70L", manufactured by Nagase chemteX Co., Ltd.) 100 was used. Except for mass parts replacing 100 mass parts of the acrylic resin A ₁ , the cut-crystal-belt-integrated back protective film of Example 5 was produced in the same manner as the cut-crystal-belt-integrated back protective film of Example 1.

[Example 6] In the production of the back protective film, the thickness of the laser marking layer was set from 8 μm to 20 μm, and the thickness of the wafer mounting layer was set from 7 μm to 5 μm. In the same manner as the dicing tape-integrated back protective film of Example 1, a dicing tape-integrated back protective film of Example 6 was produced.

[Example 7] In the production of the back protective film, the thickness of the laser marking layer was set from 8 μm to 5 μm, and the thickness of the wafer mounting layer was set from 7 μm to 5 μm. In the same manner as the dicing tape-integrated back protective film of Example 1, the dicing tape-integrated back protective film of Example 7 was produced.

[Example 8] In the production of the back protective film, the thickness of the laser marking layer was set from 8 μm to 10 μm, and the thickness of the wafer mounting layer was set from 7 μm to 15 μm. In the same manner as the dicing tape-integrated back protective film of Example 1, a dicing tape-integrated back protective film of Example 8 was produced.

[Comparative Example 1] 100 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase chemteX Co., Ltd.), and epoxy resin B ₃ (trade name "EPPN-501HY", Japan Chemical Industries, Ltd.) Co., Ltd.) 70 parts by mass, phenol resin C ₂ (trade name "MEH7851-SS", manufactured by Meiwa Chemical Co., Ltd.) 80 parts by mass, filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 175 15 parts by mass of black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 30% by mass Thing. Next, the resin composition was coated on a polysiloxane release surface of a PET separator (thickness: 50 μm) having a polysiloxane release surface using a dispenser to form a resin composition layer. Next, the composition layer was dried by heating at 130 ° C. for 2 minutes, and a back surface protective film having a thickness of 25 μm was produced on a PET separator. Then, the back protection film of Comparative Example 1 was used in place of the back protection film of Example 1. Except that, the cut of Comparative Example 1 was produced in the same manner as that of the cut-ribbon-integrated back protection film of Example 1. Ribbon integrated back protection film.

[Comparative Example 2] 100 parts by mass of acrylic resin A ₁ (trade name "Teisan Resin SG-P3", manufactured by Nagase chemteX Co., Ltd.) and epoxy resin B ₁ (trade name "KI-3000-4", new Nippon Steel & Sumitomo Chemical Co., Ltd.) 50 parts by mass, epoxy resin B ₂ (trade name "JER YL980", manufactured by Mitsubishi Chemical Corporation) 20 parts by mass, phenol resin C ₁ (trade name "MEH7851-SS"), Meiwa Chemical Co., Ltd.) 75 parts by mass, filler (trade name "SO-25R", manufactured by Admatechs Co., Ltd.) 175 parts by mass, and black dye (trade name "OIL BLACK BS", manufactured by Orient Chemical Industries Co., Ltd.) 15 parts by mass was added to methyl ethyl ketone and mixed to obtain a resin composition having a solid content concentration of 30% by mass. Next, the resin composition was applied on a polysiloxane release surface of a PET separator (thickness: 50 μm) having a polysiloxane release surface using a dispenser to form a resin composition layer. Next, the composition layer was dried by heating at 130 ° C. for 2 minutes, and a back surface protective film having a thickness of 25 μm was produced on a PET separator. Then, the back protection film of Comparative Example 2 was used in place of the back protection film of Example 1. Except that, the cut of Comparative Example 2 was produced in the same manner as that of the cut-ribbon-integrated back protection film of Example 1. Ribbon integrated back protection film.

[Comparative Example 3] In the production of the back surface protective film, the thickness of the wafer mounting layer was changed from 7 μm to 17 μm. Except that, the same manner as that of the dicing tape-integrated back surface protective film of Example 1 was used. , A dicing tape-integrated back protective film of Comparative Example 3 was produced.

<Break strength and elongation at break of the back surface protective film> For each film test piece (width 2 mm × length 20 mm) cut out from the back surface protective films of Examples 1 to 8 and Comparative Examples 1 to 3, TMA was used for measurement. The breaking strength (N) and elongation at break (%) in a tensile test performed by a testing machine (trade name "TMA Q400", manufactured by TA Instruments). This tensile test is for a film test piece for measurement. After 5 minutes of holding at -15 ° C, the operating mode of the testing machine is set to the tensile mode. The initial distance between the chucks is 16 mm,- It was carried out under the conditions of 15 ° C and a load increasing rate of 1.2 N / min. When the load of the TMA tester used is not broken at 1.2 N, the breaking strength is evaluated as "exceeding 1.2", and the breaking elongation is evaluated as exceeding the elongation (%) under the load of 1.2 N. These results are shown in Tables 1 and 2.

<Severability of the back surface protective film> The above-mentioned bonding steps and the first extension step for cutting (cooling extension) were performed by using the above-mentioned each crystal-cut-belt-integrated back surface protective film of Examples 1 to 8 and Comparative Examples 1 to 3. Step), and a second extension step (normal temperature extension step) for separation.

In the bonding step, the semiconductor wafer segment held on the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) is bonded to the back surface protective film of the dicing tape integrated back surface protective film. Then, the wafer processing tape is peeled from the semiconductor wafer division. During lamination, a laminator was used, the temperature condition was set to 80 ° C, and the pressure condition was set to 0.15 MPa. In addition, a semiconductor wafer division system is formed and prepared as follows. First, a bare wafer (12 inches in diameter and 780 μm in thickness) was held in a wafer processing tape (trade name "V12S-R2-P", manufactured by Nitto Denko Corporation) together with the ring frame. , Manufactured by Tokyo Chemical Industry Co., Ltd.) From one side, a cutting device (trade name "DFD6260", manufactured by Disco Co., Ltd.) is used to form a singulation groove (width 25 μm, depth 330 μm, forming a grid of 0.8 mm × 0.8 mm in a block). Next, the wafer processing tape (trade name "UB-3083D", manufactured by Nitto Denko Corporation) was bonded to the surface of the dividing groove, and then the wafer processing tape (trade name "V12S-R2-P") was attached. Stripped from wafer. Thereafter, the wafer was thinned to a thickness of 300 by grinding from the other side of the wafer (the side where the dividing groove is not formed) using a back-side polishing device (trade name "DGP8760", manufactured by Disco Co., Ltd.). μm. In the above manner, a semiconductor wafer divided body is formed (in a state of being held on a wafer processing tape). The semiconductor wafer segment includes a plurality of semiconductor wafers (0.8 mm × 0.8 mm).

The cooling extension step is performed in a cooling extension unit using a wafer isolation device (trade name "Chip Isolator DDS2300", manufactured by Disco Co., Ltd.). Specifically, first, a 12-inch diameter SUS ring frame (manufactured by Disco Co., Ltd.) was attached at room temperature to the above-mentioned dicing tape-integrated back protective film with a semiconductor wafer segment. Cut crystal with adhesive layer. Next, the dicing tape-integrated back protective film is set in the device, and the dicing tape with the dicing tape-integrated back protective film of the semiconductor wafer division is extended in the cooling extension unit of the device. In this cooling and stretching step, the temperature was -15 ° C, the stretching speed (raising speed) was 100 mm / sec, and the stretching amount (raising amount) was 15 mm.

The room temperature extension step is performed in a room temperature extension unit using a wafer isolation device (trade name "Chip Isolator DDS2300", manufactured by Disco Co., Ltd.). Specifically, the dicing tape with the dicing tape-integrated back protective film with the semiconductor wafer divided body after the above-mentioned cooling and extending step is extended in the normal temperature stretching unit of the device. In the normal temperature stretching step, the temperature was 23 ° C., the stretching speed was 1 mm / sec, and the stretching amount was 15 mm. Thereafter, a heat shrinking treatment is performed on the peripheral edge portion on the outer side of the wafer-integrated back protective film extended at room temperature from the workpiece bonding area. In this treatment, the heating temperature was 200 ° C.

Regarding the severability of the back protective film, after the above process using the integrated cut-belt type back protective film, the situation where the cut of the back protective film is cut across the entire area is evaluated as excellent (◎), and the back protective The case where the film produced a cut of more than 90% and less than 100% of the planned cut line was evaluated as good (○), and the case where the cut generated by the back protective film did not reach 90% of the planned cut line was evaluated as bad (×) . The evaluation results are shown in Tables 1 and 2.

[Evaluation] According to the back surface protective films of Examples 1 to 8, in the extension step using a dicing tape-integrated back surface protective film in order to obtain a semiconductor wafer with a back surface protective film, a good cut can be achieved.

[Table 1]

[Table 2]

10‧‧‧ film (adhesive sheet)

10'‧‧‧ film (adhesive sheet)

11‧‧‧Laser Marker Layer

12‧‧‧ Wafer mounting layer

20‧‧‧ cut crystal ribbon

21‧‧‧ substrate

22‧‧‧ Adhesive layer

22a‧‧‧ Adhesive surface

30a‧‧‧Modified area

30b‧‧‧ split slot

30A‧‧‧Semiconductor wafer

30B‧‧‧Semiconductor wafer

30C‧‧‧Semiconductor Wafer Split

31‧‧‧semiconductor wafer

41‧‧‧ ring frame

42‧‧‧ retainer

43‧‧‧ jacking member

44‧‧‧pin member

45‧‧‧Adsorption fixture

51‧‧‧Mounting base

52‧‧‧ bump

53‧‧‧ Underfill

R‧‧‧ Irradiated area

T1‧‧‧ Wafer Processing Tape

T1a‧‧‧ Adhesive surface

T2‧‧‧ Wafer Processing Tape

T2a‧‧‧ Adhesive surface

T3‧‧‧ Wafer Processing Tape

T3a‧‧‧ Adhesive surface

W‧‧‧Semiconductor wafer

Wa‧‧‧Part 1

Wb‧‧‧Part 2

X‧‧‧ cut crystal tape integrated type adhesive sheet

FIG. 1 is a schematic cross-sectional view of a dicing tape-integrated adhesive sheet according to an embodiment of the present invention. FIG. 2 shows part of the steps in a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 3 shows part of the steps in a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 4 shows part of the steps in a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 5 shows part of the steps of a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 6 shows part of the steps of a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 7 shows part of the steps of a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 8 shows part of the steps in a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 9 shows part of the steps in a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 10 shows part of the steps of a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1. FIG. 11 shows part of the steps of a method for manufacturing a semiconductor device using the dicing tape-integrated adhesive sheet shown in FIG. 1.

Claims (7)

A dicing tape-integrated adhesive sheet includes: a dicing tape having a laminated structure including a substrate and an adhesive layer; and an adhesive sheet that is in close contact with the dicing tape in a peelable manner. The above adhesive layer; and the above-mentioned adhesive sheet was pulled on a test piece of adhesive sheet having a width of 2 mm under the conditions of an initial inter-chuck distance of 16 mm, -15 ° C, and a load increasing speed of 1.2 N / min The breaking strength in the tensile test is 1.2 N or less and the elongation at break is 1.2% or less. For example, the dicing tape-integrated adhesive sheet of claim 1, wherein the adhesive sheet has a laminated layer including a first layer of the adhesive layer in close contact with the dicing tape and a second layer on the first layer structure. For example, the dicing tape-integrated adhesive sheet of claim 2, wherein the ratio of the thickness of the first layer to the thickness of the second layer is 0.2 to 4. The dicing tape-integrated adhesive sheet according to any one of claims 1 to 3, wherein the adhesive sheet is a back surface protective film. For example, the dicing tape-integrated adhesive sheet of claim 2 or 3, wherein the adhesive sheet is a back surface protective film, and the first layer is thermosetting. The dicing tape-integrated adhesive sheet according to claim 5, wherein the second layer described above is thermoplastic. For example, the dicing tape-integrated adhesive sheet of claim 2 or 3, wherein the adhesive sheet is a back protective film, and the second layer is thermoplastic.