TW201843745A - Semiconductor manufacturing device and manufacturing method of semiconductor device - Google Patents

Abstract

When a die is pushed up by a push-up unit, the die may be deformed and may leak to a lower side of the adsorption face of a collet. A semiconductor manufacturing apparatus comprises: a wafer holding table for holding a wafer; and a collet unit for sucking the die from the wafer holding table. The collet unit includes: the collet; and a collet holder for retaining the collet. The collet has: a first portion in contact with the die; a second portion held in the collet holder; a third portion connecting a central portion of the first portion and a central portion of the second portion; and a first suction hole penetrating the first portion, the third portion, and the second portion. The first portion is deformable following deflection of the die.

Description

Semiconductor manufacturing device and method for manufacturing semiconductor device

[0001] This case relates to a semiconductor manufacturing apparatus, and can be applied to, for example, a die attacher having a chuck.

[0002] Generally, in a die attacher that mounts a semiconductor wafer called a die on the surface of, for example, a wiring board or a lead frame (hereinafter collectively referred to as a substrate), an adsorption nozzle such as a chuck is generally used to hold the die. The operation (work) to carry out the bonding by transferring the substrate to the substrate, applying a pressing force, and heating the bonding material is repeated. [0003] In a die bonding process of a semiconductor manufacturing device such as a die bonder, there is a peeling process of peeling a divided die from a semiconductor wafer (hereinafter referred to as a wafer). In the peeling process, the die is jacked by a jacking unit from the back of the dicing tape, the dicing tape held by the die supply section is peeled one by one, and is transferred onto the substrate using an adsorption nozzle such as a chuck. [Prior Art Document] [Patent Document] [0004] [Patent Document 1] Japanese Patent Laid-Open No. 2015-76410

(Problems to be Solved by the Invention) [0005] When the crystal grains are jacked up by the jacking unit, the crystal grains are deformed and bent below the adsorption surface of the chuck, and leakage may occur. The object of this case is to provide a semiconductor manufacturing device that does not lose its vacuum suction force due to leakage even if the crystal grains are deformed. Other problems and novel features can be clearly understood from the description of the explanatory drawings and the drawings. (Means to Solve the Problem) [0006] The outline of the representative of the case is briefly explained as follows. That is, the semiconductor manufacturing apparatus includes: (i) a wafer holding table that holds a wafer; and (ii) a chuck portion that adsorbs a die from the wafer holding table. The chuck is provided with a chuck and a chuck jig holding the chuck. The chuck includes: 第一 a first portion in contact with the die; a second portion held by the chuck jig; a third portion connecting a central portion of the first portion and a central portion of the second portion; The first part, the first suction hole of the third part and the second part. The aforementioned first part can be deformed following the bending of the aforementioned crystal grains. [Effects of the Invention] [0007] According to the semiconductor manufacturing apparatus described above, leakage can be reduced.

[0009] Hereinafter, embodiments and modifications will be described using drawings. However, in the following description, the same reference numerals are given to the same constituent elements, and redundant descriptions may be omitted. In addition, in order to make the description clearer than the actual form, the drawings may schematically show the width, thickness, shape, and the like of each part, but this is only an example and is not intended to limit the interpreter of the present invention. [Embodiment] [0010] FIG. 1 is a top view showing an outline of a die attacher of an embodiment. FIG. 2 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 1. [0011] The die sticking machine 10 is roughly divided into a die supply section 1, a picking section 2, an intermediate stage section 3, a joint section 4, a transfer section 5, a substrate supply section 6, a substrate carry-out section 7, and monitoring and control sections. Operation control unit 8. [0012] First, the die supply unit 1 supplies the die D mounted on the substrate P. The die supply unit 1 includes a wafer holding table 12 that holds the wafer 11 and an ejection unit 13 indicated by a dotted line from which the die D is ejected from the wafer 11. The die supply unit 1 is moved in the XY direction by a driving means (not shown), and the picked-up die D is moved to the position of the jack unit 13. [0013] The picking section 2 is provided with: (i) a picking head 21 that picks up the die D; (ii) a Y driving section 23 that picks up the picking head 21 in the Y direction; and lifting, rotating, and moving the chuck 22 in the X direction. Each driving part shown. The pick-up head 21 has a chuck part 22 (also referred to in FIG. 2) that holds and holds the jacked-up crystal grains D at the front end, picks up the crystal grains D from the crystal grain supply unit 1, and places them on the intermediate platform 31. The pick-up head 21 includes drive units (not shown) for raising, lowering, rotating, and moving the chuck part 22 in the X direction. [0014] The intermediate stage unit 3 includes an intermediate stage 31 on which the die D is temporarily placed, and a stage identification camera 32 for identifying the die D on the intermediate stage 31. [0015] The bonding portion 4 picks up the die D from the intermediate stage 31, and joins it to the transferred substrate P, or joins it in the form of being laminated on the die that has been bonded to the substrate P. The joint portion 4 includes: (1) a joint head (41) including a chuck (42) (which is also referred to in FIG. 2) for holding and holding the crystal grain D on the tip end in the same manner as the pickup head (21); It moves in the Y direction; and the substrate recognition camera 44 captures a position identification mark (not shown) of the substrate P, and recognizes the joining position. With this configuration, the bonding head 41 corrects the pickup position and posture based on the imaging data of the platform recognition camera 32, picks up the die D from the intermediate platform 31, and bonds the die D to the substrate based on the imaging data of the substrate recognition camera 44. P. [0016] The transfer unit 5 includes a substrate transfer tray 51 on which one or a plurality of substrates P (four in FIG. 1) are placed, and a tray rail 52 in which the substrate transfer tray 51 moves. The transfer unit 5 has the same structure in parallel. The first and second transfer sections. The substrate transfer tray 51 is moved by driving a nut (not shown) provided on the substrate transfer tray 51 with a ball screw (not shown) provided along the tray rail 52. With this configuration, the substrate transfer tray 51 mounts the substrate P with the substrate supply unit 6 and moves to the bonding position along the tray rail 52. After the bonding, the substrate transfer tray 51 moves to the substrate transfer unit 7 and passes the substrate P to the substrate transfer unit. 7. The first and second transfer units are driven independently of each other, and while the die D is bonded to the substrate P placed on one of the substrate transfer trays 51, the other substrate transfer tray 51 is to carry out the substrate P and return to the substrate The supply unit 6 prepares for placing a new substrate P and the like. [0017] The control device 8 is provided with: (i) a memory that stores programs (software) for monitoring and controlling the operations of the various parts of the die attach machine 10; and a central processing unit (CPU) that implements the storage of the programs in the memory. Program. [0018] Next, the configuration of the crystal grain supply unit 1 will be described with reference to FIGS. 3 and 4. FIG. 3 is a diagram showing an external perspective view of a die supply unit. FIG. 4 is a schematic cross-sectional view showing a main part of a crystal grain supply unit. [0019] The die supply unit 1 includes a wafer holding table 12 that moves in the horizontal direction (XY direction), and a jack unit 13 that moves in the vertical direction. The wafer holding table 12 includes: (1) an expansion ring 15 that holds the wafer ring 14; and a support ring 17 that positions the dicing tape 16 that is held on the wafer ring 14 and has a plurality of crystal grains D adhered to it horizontally . The jack-up unit 13 is arranged inside the support ring 17. [0020] The die supply unit 1 lowers the expansion ring 15 holding the wafer ring 14 when the die D is pushed up. As a result, the dicing tape 16 held by the wafer ring 14 will be stretched, and the interval between the crystal grains D will be enlarged. Sexual improvement. In addition, as the thickness is reduced, the adhesive that adheres the crystal grains to the substrate changes from a liquid state to a thin film state. A die attach film (DAF) is attached between the wafer 11 and the dicing tape 16. Thin film-like adhesive material of 18. For the wafer 11 having the die-bonding film 18, dicing is performed on the wafer 11 and the die-bonding film 18. Therefore, in the peeling process, the wafer 11 and the die bonding film 18 are peeled from the dicing tape 16. In the following, the existence of the die-bonding film 18 is ignored, and the peeling process will be described. [0021] Next, the jacking unit will be described using FIG. 5. FIG. 5 is a top view of the jacking unit of FIG. 4. [0022] The jacking unit 13 is roughly divided into a jacking unit 131 and a peripheral portion 132 surrounding the jacking unit 131. The jack-up block portion 131 includes a first block 131a and a second block 131b located inside the first block 131a. The peripheral portion 132 is a plurality of suction holes 132a. [0023] Next, the technology reviewed by the inventors of this case (hereinafter referred to as a comparative example) will be described with reference to FIGS. 6 and 7. Fig. 6 is a longitudinal sectional view showing a chuck portion and a jacking unit of a comparative example. Fig. 7 is a bottom view of the chuck portion of Fig. 6. [0024] As shown in FIG. 6, the chuck portion 22R is a rubber sheet holder 24R having a rubber sheet 25R and a rubber sheet holder 25R. The rubber sheet 25R is provided with a vacuum suction hole 251R. A vacuum suction hole 26R is provided in the center of the rubber sheet holder 24R, and a vacuum suction groove 27R is provided on the upper side of the rubber sheet 25R of the rubber sheet holder 24R. As shown in FIG. 7, the rubber sheet 25R has a rectangular shape similar to the crystal grain D in the plane, and has the same size as the crystal grain D. The thickness of the rubber sheet 25R is approximately 5 mm. The jacking unit 13 is the same as the jacking unit 13 of the embodiment. [0025] The picking operation of the comparative example starts when the intended die D (peeling target die) on the dicing tape 16 is positioned on the jack unit 13 and the chuck portion 22R. Once the positioning is completed, a vacuum is drawn through the suction holes 132 a or the gaps 131 c and 131 d of the jacking unit 13, whereby the cutting tape 16 is attracted to the upper surface of the jacking unit 13. In this state, the chuck portion 22R will fall toward the device surface of the die D while dropping and landing. Here, once the jacking portion 131 of the main portion of the jacking unit 13 rises, the crystal grain D rises while being held between the chuck portion 22R and the jacking portion 131, but the peripheral portion of the cutting tape 16 is maintained Since the vacuum suction is applied to the peripheral portion 132 of the jack block 131, tension is generated around the crystal grain D. As a result, the dicing tape 16 is peeled off around the crystal grain D. However, on the other hand, at this time, the periphery of the crystal grain D receives stress on the lower side and forms a bend. In this way, a gap is formed between the lower surface of the chuck and air flows into the vacuum suction system (leakage) of the chuck 22R. If it leaks once and the crystal grains D leave, it will no longer be possible to keep the crystal grains D below the adsorption surface. [0026] In a multilayer package in which a plurality of dies are mounted three-dimensionally on a wiring substrate, in order to prevent an increase in package thickness, it is required to form the thickness of the dies to be thinner than about 20 μm (for example, 10 to 15 μm). The grains are easily bent. [0027] Next, the clip head according to the embodiment will be described with reference to FIGS. 8 to 12. FIG. 8 is a cross-sectional view illustrating a chuck portion of the embodiment, and is a view showing a state before the chuck chuck is attached. FIG. 9 is a cross-sectional view illustrating a chuck of the embodiment, and is a view showing a state after the chuck chuck is attached. Fig. 10 is a diagram illustrating a chuck jig of the embodiment. Fig. 10 (A) is a cross-sectional view taken along line A1-A2 of (B), (B) is a plan view, and (C) is a view of a support part inserted into a chuck chuck. Floor plan. FIG. 11 is a diagram illustrating a chuck (when the crystal grain size is large) of the embodiment. FIG. 11 (A) is a cross-sectional view taken along line A1-A2 of FIG. 11 (B) is a plan view. FIG. 12 is a view illustrating a chuck (when the grain size is small) of the embodiment, FIG. 12 (A) is a cross-sectional view taken along line A1-A2 of (B), and (B) is a plan view. [0028] The chuck head 22 is a chuck jig 222 having a chuck chuck 221 and a holding chuck 221. [0029] The chuck chuck 221 is made of, for example, silicone rubber, and has a chuck section (first part) 221a that adsorbs the crystal grain D, a holding part (second part) 221b that is inserted into the chuck jig 222, and is provided with The connecting portion (third portion) 221d of the vacuum suction hole (first suction hole) 221c. The chuck portion 221 a has a rectangular shape similar to the crystal grain D, and is smaller than the crystal grain D. The thickness of the chuck portion 221a is 0.5 to 1 mm. [0030] The chuck jig 222 includes a space portion 222a inserted into the holding portion 221b, a tubular portion 222b extending from the space portion 222a to the upper portion, pressing an outer peripheral portion 222c of a peripheral portion of the chuck portion 221a, and a holding portion 221b. Fixed and released joystick 222d. A vacuum suction hole (second suction hole) 222e is provided in the center of the tubular portion 222b, and is configured to be connected to the vacuum suction hole 221c. A spring 222f is mounted on the control lever 222d and its rotation shaft, and the control lever 222d will use the spring 222f's spring force to press in the direction of the arrow. [0031] When the chuck chuck 221 is put into the chuck jig 222 and the lever 222d is released, the chuck chuck 221 is held by the force of the spring 222f. When the joystick 222d is held, the chuck chuck 221 can be easily removed. As shown in FIG. 10 (C), the side surface of the holding portion 221b of the chuck chuck 221 serves as a guide, and the horizontal and θ directions are automatically aligned. FIG. 10 (C) shows a state before the holding portion 221b is fixed by the joystick 222d. [0032] The outer periphery of the bottom surface of the chuck chuck 221 (the chuck portion 221a) has the same rectangular shape as the crystal grain D, and has the same size as the crystal grain D. The outer periphery of the bottom surface of the chuck portion 221a may be larger or smaller than the crystal grain D. As shown in FIG. 11, when the size of the crystal grain D is large, the chuck portion 221 a is enlarged. As shown in FIG. 12, when the size of the crystal grain D is small, the chuck portion 221 a is reduced. The chuck jig 222 is common regardless of the size of the die D, and the size of the die D can be changed by preparing a chuck chuck that changes only the size of the chuck portion 221a of the chuck 221. In addition, in FIG. 11, the area of the bottom surface of the chuck holder 222 is approximately the same as the area of the bottom surface of the chuck section 221 a. However, in FIG. 12, the area of the bottom surface of the chuck section 221 a is larger than the bottom surface of the chuck section 222. Area is smaller. Further, the holding portion 221b has a rectangular shape in plan view, and in FIGS. 11 and 12, the area of the upper surface of the holding portion 221b is smaller than the area of the bottom surface of the chuck portion 221a. The cross section of the connecting portion 221d is annular, and the outer diameter of the annular portion is smaller than that of the holding portion 221b. [0033] Next, the picking operation of the chuck of the embodiment will be described with reference to FIGS. 5, 13 and 14. 13 is a cross-sectional view of a chuck portion and a jacking unit of the embodiment. 14 is a flowchart showing a processing flow of a pickup operation. [0034] Step S1: The control unit 8 moves the wafer holding table 12 so that the picked-up die D will be directly above the jacking unit 13, and positions the peeling target die on the jacking unit 13 and the chuck portion 22. . The jacking unit 13 is moved so that the upper surface of the jacking unit 13 will contact the back surface of the dicing tape 16. At this time, as shown in FIG. 13 (A), the control unit 8 makes the blocks 131a, 131b of the jack block 131 form the same plane as the surface of the peripheral portion 132, and passes through the suction hole 132a of the peripheral portion 132 and the block. The gaps 131 c and 131 d are evacuated to thereby attract the cutting tape 16 to the upper surface of the jack unit 13. [0035] Step S2: As shown in FIG. 13 (A), the control unit 8 lowers the chuck portion 22 while evacuating the chuck portion 22 so as to land on the die D to be peeled, and presses the die D. The crystal grains D are adsorbed by the chuck portion 221a and the vacuum suction hole 221c having the vacuum suction hole 221c. [0036] Step S3: The control unit 8 raises the first block 131a and the second block 131b of the jacking block portion 131 of the main portion of the jacking unit 13. As a result, the crystal grain D rises while being held between the chuck portion 22 and the jacking portion 131, but the peripheral portion of the dicing tape 16 is maintained to be vacuum-adsorbed to the periphery portion 132 of the jacking portion 131. Tension is generated around the grain D, and as a result, the dicing tape 16 is peeled off around the grain D. On the other hand, at this time, as shown in FIG. 13 (B), the periphery of the crystal grain D receives stress on the lower side and forms a bend. However, since the chuck portion 221a is thin and soft, the chuck portion 221a of the chuck 221 The occurrence of leakage is suppressed by following the bending of the mating grain D. At this time, the peripheral portion of the chuck portion 221 a is separated from the bottom surface of the chuck jig 222. The jacking height of the jacking block portion 131 is smaller than the jacking height of the comparative example. [0037] Step S4: The control unit 8 raises the chuck portion 22. Thereby, as shown in FIG.13 (C), the crystal grain D is peeled from the dicing tape 16. [0038] Step S5: The control unit 8 causes the blocks 131a and 131b of the jack block 131 to form the same plane as the surface of the peripheral portion 132, and stops the suction hole 132a and the gap 131c between the blocks through the peripheral portion 132. Adsorption of the dicing tape 16 of 131d. The control unit 8 moves the jack unit 13 so that the upper surface of the jack block 131 is separated from the back surface of the dicing tape 16. [0039] The control unit 8 repeats steps S1 to S5 and picks up good grains of the wafer 11. [0040] In addition, the chuck portion of the embodiment is mounted on the pickup head 21 and picks up the die D from the die supply unit 1 and is placed on the intermediate platform 31. However, it can also be used as a bonding head to be bonded to the substrate P or the like. Use of chucks. 15 is a cross-sectional view of a chuck and a substrate. As shown in FIG. 15, since the upper surface of the chuck portion 221 a of the chuck chuck 221 is in contact with the bottom surface of the chuck holder 222 (the outer peripheral portion 222 c and the bottom surface of the joystick 222 d), bonding to the substrate P and the like is possible. [0041] Next, a method for manufacturing a semiconductor device using the die attacher of the embodiment will be described with reference to FIG. 16. FIG. 16 is a flowchart showing a method of manufacturing a semiconductor device. [0042] Step S11: The wafer ring 14 holding the dicing tape 16 to which the die D divided from the wafer 11 is attached is housed in a wafer cassette (not shown), and carried into the die attacher 10. The control unit 8 supplies the wafer ring 14 to the die supply unit 1 from a wafer cassette filled with the wafer ring 14. Then, the substrate P is prepared and carried into the die attacher 10. The control unit 8 uses the substrate supply unit 6 to place the substrate P on the substrate transfer tray 51. [0043] Step S12: The control unit 8 picks up the dies that have been divided according to steps S1 to S5 from the wafer. [0044] Step S13: The control unit 8 mounts the picked-up dies on the substrate P or laminates the bonded dies. The control unit 8 mounts the die D picked up from the wafer 11 on the intermediate stage 31, picks up the die D again from the intermediate stage 31 with the bonding head 41, and joins the transferred substrate P. [0045] Step S14: The control unit 8 uses the substrate carrying-out unit 7 to obtain the substrate P to which the die D is bonded from the substrate carrying tray 51. The substrate P is carried out from the die attacher 10. [0046] The chuck of the embodiment is provided with a vacuum suction hole only in the center portion of the chuck, and the remaining outer portion has a suction cup structure that is easily deformed. In addition, it has a structure in which the chuck can be detached from the chuck by one touch. [0047] Since the reduction of the chuck holding force due to leakage can be prevented, it can be picked up at a low jacking height. Since the vacuum suction hole is provided only in the center portion, there is no need to design the structure according to the grain size. With a clamp structure that prevents deformation in the upward direction, it can be used for joining. Since the amount of jacking can be reduced, it is possible to reduce the stress of the crystal grains. [0048] <Modifications> Below, some representative modifications will be mentioned. In the following description of the modification example, the same reference numerals as those of the above-mentioned embodiment may be used for portions having the same configuration and function as those described in the above-mentioned embodiment. In addition, the description of such a part can appropriately refer to the description of the above-mentioned embodiment within a technically non-contradictory range. In addition, a part of the above-mentioned embodiment and all or a part of the plural modification examples can be appropriately combined in a range that is not technically contradictory. [0049] (Modification 1) In the embodiment, the jacking unit 13 is used when the die D is peeled from the dicing tape 16, but instead of the jacking unit 13, other means to assist the adsorption of the chuck may be used. A crystal sticking machine according to a fifth modification using this method will be described with reference to FIGS. 17 and 18. [0050] FIG. 17 is a cross-sectional view for explaining the concept of a die bonder according to Modification 1. FIG. 17 (A) corresponds to FIG. 13 (A), and FIG. 17 (B) corresponds to FIG. 13 (B). FIG. 17 (C) corresponds to FIG. 13 (C). FIG. 18 is a cross-sectional view for explaining a means for assisting a die bonder according to a modification. [0051] As shown in FIG. 17 (A), the control unit 8 lowers the chuck portion 22 while evacuating the chuck portion 22 so as to land on the die D to be peeled, and pushes the die D to push The chuck portion 221a and the vacuum suction hole 221c having the vacuum suction hole 221c adsorb the crystal grains D. [0052] As shown in FIG. 17 (B), when the control unit 8 raises the chuck portion 22 that adsorbs the crystal grain D, the control unit 8 causes the dicing tape 16 to use the same assisting means as the raising of the jack block 131. Deformation. [0053] As shown in FIG. 17 (C), the control unit 8 raises the chuck portion 22 to separate the crystal grain D from the dicing tape 16. [0054] As shown in FIG. 18 (A), the control unit 8 expands the balloon structure 13A to assist the crystal grain D at the same time as the chuck portion 22 is raised. [0055] As shown in FIG. 18 (B), the control unit 8 raises the assist block 13B in synchronization with the chuck raising of the chuck portion 22. The assist block 13B has a structure similar to that of the second block 131b of the jacking unit 13, for example, and performs the same operation. [0056] As shown in FIG. 18 (C), in a manner that the dicing tape 16 under the target crystal grain D can be deformed to some extent, the control unit 8 adsorbs and holds only the outer periphery of the crystal grain D by the adsorption unit 13C. The suction portion 13C has, for example, a structure similar to that of the peripheral portion 132 of the jacking unit 13 and causes the same operation. [Modification 2] FIG. 19 is a diagram illustrating a chuck chuck according to Modification 2. FIG. 19 (A) is a cross-sectional view taken along line A1-A2 of (B) and (C) (D), and FIG. 19 ( B), (C), and (D) are plan views. The chuck chuck 221B of the second modification is to securely secure the suction force between the chuck chuck 221B and the crystal grain D. The bottom of the chuck part 221a2 is provided with a groove VT2 having a width and a height that is not crushed by the suction force. The groove VT2 is formed to extend radially from the vacuum suction hole 221c. Therefore, even if the suction vacuum from the vacuum suction hole 221c in the center absorbs the crystal grains D that are in contact with the chuck portion 221a2, when the flow path of the suction vacuum is blocked around the vacuum suction hole 221c, the suction vacuum will also flow from the groove VT2. It is guided to the outer peripheral part, and the crystal grains can be adsorbed stably and continuously. The shape of the groove is not limited to that shown in FIG. 19 (B), and may be a shape shown in FIGS. 19 (C) and 19 (D). In FIG. 19 (C), a concentric circular groove having the vacuum suction hole 221c as a center is connected to a straight groove passing through the horizontal and vertical directions of the vacuum suction hole 221c to form a groove VT2. In FIG. 19 (D), the grooves connected to the vacuum suction holes 221c are arranged in a grid shape to form the grooves VT2. [0058] (Modification 3) FIG. 20 is a diagram illustrating a chuck chuck of Modification 3. FIG. 20 (A) is a cross-sectional view taken along line A1-A2 of FIG. 20 (B) is a plan view. The chuck chuck 221C of the third modification is a block including a space SP provided in the outer peripheral portion of the bottom of the chuck portion 221a3 to ensure the suction force, and a block provided near the center to maintain the position of the crystal grain D during the suction. Department BLK. The block portions BLK are four grooves VT3 provided between the four rectangular blocks BL and each of the blocks BL to guide the suction vacuum to the space SP of the outer peripheral portion. Thereby, the crystal grains D can be stably adsorbed in a state where the deformation of the crystal grains D during the adsorption is prevented as much as possible. The material of the block BL is to ensure the flexibility of the suction pad 221a3 as a whole, and to ensure the followability of the outer peripheral portion after the suction. In order to prevent deformation of the central portion, a material having a higher hardness than the suction pad 221a3 may be used. [0059] (Modification 4) FIG. 21 is a diagram illustrating a chuck chuck according to Modification 4, FIG. 21 (A) is a cross-sectional view taken along line A1-A2 of (B), and FIG. 21 (B) is a plan view. The chuck chuck 221D of the fourth modification is for increasing the area for securing the suction surface (groove), and includes a plurality of elongated rounded partition walls PW at the bottom of the chuck section 221a4. The spoke PW is formed to extend radially from the vacuum suction hole 221c in the center to form the groove VT4. The configuration interval is set at intervals at which the partition PW is not deformed in consideration of the strength and vacuum of the partition PW. Thereby, the adsorption force to the crystal grains is further improved, and the peripheral followability can be ensured. [0060] (Modification 5) FIG. 22 is a cross-sectional view illustrating a chuck chuck according to Modification 5. FIG. 22 (A) is a cross-sectional view taken along the line A1-A2 of FIG. 22 (B) is a plan view. The chuck chuck 221E according to the fifth modification is configured by a pin QP having a pyramidal shape (for example, a quadrangular pyramid) instead of the slender, rounded partition PW of the fourth modification. In the chuck chuck 221E, pyramid-shaped pins QP are provided in an array at the bottom of the chuck section 221a5 to form a groove VT5. Thereby, the same effect as the modification 4 can be obtained. [0061] (Modification 6) FIG. 23 is a cross-sectional view illustrating a chuck chuck according to Modification 6. FIG. 23 (A) is a cross-sectional view taken along line A1-A2 of (B), and FIG. 23 (B) is a plan view. The chuck chuck 221F of the modification 6 is provided with the chuck part 221a6 which consists of two layers of the plate and film of an elastic material. That is, the chuck portion 221a6 includes an upper layer portion PL and a lower layer portion SH. The upper layer PL is a plate (metal plate or resin plate) made of an elastic material, for example, a metal plate having spring elasticity, and has a plate thickness of about 0.03 to 0.3 mm. Further, the holding portion 221b and the connecting portion 221d are also constituted by the same members as the upper layer portion PL. The lower layer portion SH is a rubber-like elastomer, such as a film, and is made of the same silicone rubber as in the example. [0062] In addition, the upper layer portion PL is smaller in configuration than the lower layer portion SH, and only the outer peripheral portion is made of rubber, whereby followability can be easily obtained. [0063] The inventions developed by the present inventors have been specifically described based on the embodiments and the modified examples, but the present invention is not limited to the above-mentioned embodiments and modified examples, and various modifications can be implemented as a matter of course. [0064] For example, the crystal grain adsorption surface of the sucker portion of Modifications 3, 4, and 5 may be adhered to a sheet of an elastic material into a block shape, a round shape, or a pyramid shape in the same manner as in Modification 6. This constitutes the grooves VT3, VT4, and VT5 that guide the suction vacuum. [0065] Further, in Modification 6, the rubber material of the lower layer portion may be pasted only on the outer peripheral portion of the upper layer portion PL to constitute the chuck portion 221a6. Thereby, the chuck chuck 221 can be configured inexpensively and with high accuracy. [0066] In Modification 6, the upper layer portion PL may not be a plate made of an elastic material, but may be formed by arranging elastic wires such as piano wires as an umbrella and attaching the lower layer portion SL of a rubber material. Suction cup portion 221a4. [0067] In the embodiment, an example is described in which a die-bonding film is used, but a preform portion for applying an adhesive may be provided on the substrate instead of using the die-bonding film. [0068] Furthermore, in the embodiment, a description is given regarding picking up a die from a die supply section and placing it on an intermediate stage, and using a bonding head to join the die placed on the intermediate stage to a substrate die. Machine, but is not limited to this, and is applicable to a semiconductor manufacturing apparatus that picks up a die from a die supply unit. For example, it can also be applied to a die attacher that does not have an intermediate platform and a pick-up head, and uses a bonding head to bond the die of the die supply section to the substrate. In addition, it can be applied to a flip-chip machine without an intermediate platform, picking up a die from a die supply part, rotating the die picking head to the upper side, transferring the die to a bonding head, and bonding the bonding head to the substrate. In addition, it can be applied to a grain sorting machine that does not have an intermediate platform and a bonding head, and places the grains picked up by the pick-up head from the grain supply section on a tray or the like.

[0069]

1‧‧‧Crystal Supply Department

11‧‧‧ wafer

13‧‧‧ jacking unit

16‧‧‧ Cutting Tape

2‧‧‧Pick up department

21‧‧‧Pickup head

22‧‧‧ Clip head

221‧‧‧ Suction Chuck

221a‧‧‧Suction cup

221b‧‧‧holding department

221c‧‧‧Vacuum suction hole

221d‧‧‧Connection Department

222‧‧‧Chuck fixture

222a‧‧‧Ministry of Space

222b‧‧‧Tube

222c‧‧‧ Peripheral

222d‧‧‧ Joystick

222e‧‧‧Vacuum suction hole

222f‧‧‧Spring

3‧‧‧Middle Platform Department

31‧‧‧ intermediate platform

4‧‧‧ Junction

41‧‧‧Joint head

8‧‧‧Control Department

10‧‧‧ Sticky Crystal Machine

D‧‧‧ Grain

P‧‧‧ substrate

[0008] FIG. 1 is a conceptual diagram of a sticky crystal machine according to an embodiment viewed from above. FIG. 2 is a diagram illustrating the operation of the pickup head and the bonding head when viewed from the direction of arrow A in FIG. 1. FIG. 3 is a diagram showing an external perspective view of the die supply unit of FIG. 1. FIG. 4 is a schematic cross-sectional view showing a main part of the crystal grain supply unit of FIG. 1. FIG. 5 is a top view of the jacking unit of FIG. 4. FIG. 6 is a cross-sectional view of a chuck portion and a jacking unit of a comparative example. FIG. 7 is a bottom view of the chuck of the comparative example. FIG. 8 is a cross-sectional view illustrating a chuck portion of the embodiment. FIG. 9 is a cross-sectional view illustrating a chuck portion of the embodiment. 10 is a cross-sectional view and a plan view illustrating a chuck jig of the embodiment. FIG. 11 is a cross-sectional view and a plan view illustrating a chuck chuck of the embodiment. FIG. 12 is a cross-sectional view and a plan view illustrating a chuck chuck of the embodiment. FIG. 13 is a cross-sectional view of the chuck portion and the jacking unit of the embodiment. FIG. 14 is a flowchart for explaining a pick-up operation of the die attacher of the embodiment. FIG. 15 is a cross-sectional view of a chuck and a substrate of the embodiment. 16 is a flowchart showing a method of manufacturing a semiconductor device according to the embodiment. 17 is a cross-sectional view for explaining a concept of a crystal sticking machine according to a first modification. FIG. 18 is a cross-sectional view for explaining a means for assisting the die bonder according to the first modification. 19 is a cross-sectional view and a plan view illustrating a chuck chuck according to a second modification. 20 is a cross-sectional view and a plan view illustrating a chuck chuck according to a third modification. 21 is a cross-sectional view and a plan view illustrating a chuck chuck according to a fourth modification. 22 is a cross-sectional view and a plan view illustrating a chuck chuck according to a fifth modification. 23 is a cross-sectional view and a plan view illustrating a chuck chuck according to a sixth modification.

Claims (19)

A semiconductor manufacturing apparatus is characterized by comprising: a wafer holding table holding a wafer; and a chuck portion that adsorbs a die from the wafer holding table; the chuck portion includes: a chuck; and a chuck holding the chuck. A chuck, The chuck is provided with: a first portion in contact with the die; held by a second portion of the chuck; 第三 a third portion connecting a central portion of the first portion and a central portion of the second portion ; And a first suction hole penetrating through the first portion, the third portion, and the second portion, the first portion may be deformed following the bending of the crystal grains. For example, in the semiconductor manufacturing device of claim 1, wherein the upper surface of the first portion is in contact with the bottom surface of the chuck and deformed in accordance with the bending of the crystal grain, the peripheral portion of the first portion is removed from the chuck. The underside of the jig is left. For example, the semiconductor manufacturing device according to item 1 of the patent application, wherein: the first part and the second part are planes as rectangular, and the area of the upper surface of the second part is smaller than the area of the bottom surface of the first part. For example, the semiconductor manufacturing device according to item 1 of the application, wherein the chuck is made of silicone rubber. For example, the semiconductor manufacturing apparatus according to item 4 of the application, wherein the thickness of the first part is 0.5 to 1 mm. For example, the semiconductor manufacturing device according to the first patent application range, wherein the chuck is configured by attaching a rubber-like elastic body to a metal plate or a resin plate having spring elasticity. For example, the semiconductor manufacturing apparatus according to item 6 of the application, wherein the thickness of the metal plate is 0.03 to 0.3 mm. For example, the semiconductor manufacturing device according to claim 6 or 7, wherein the size of the metal plate is smaller than that of the rubber-like elastomer. For example, the semiconductor manufacturing device according to the first item of the patent application scope, wherein the first part is a groove having a width and a height which is not crushed by the suction force at the bottom. For example, the semiconductor manufacturing device of the first patent application range, wherein the first part is provided with: The space of the suction section is used to ensure the adsorption force located at the outer periphery; A plurality of blocks are located near the center, while maintaining the suction The position of the aforementioned crystal grains; and a groove, which is located between the plurality of blocks, and guides the suction vacuum to the space of the outer peripheral portion. For example, the semiconductor manufacturing device according to the first patent application range, wherein the first part is provided with: a plurality of slender 楕 round partitions; and grooves between the 壁 partitions; the plurality of partition walls are arranged from the first suction hole. Into spokes. For example, the semiconductor manufacturing device of the scope of application for a patent, wherein the chuck jig is provided with: pressing an outer peripheral portion of a peripheral portion of the first portion; a space portion inserted into the second portion; a tube extending from the space portion to the upper portion And a joystick for fixing and liberating the second portion, wherein a second suction hole is provided in the center of the tubular portion, and is configured to be connected to the first suction hole. For example, the semiconductor manufacturing device according to item 12 of the patent application, wherein the chuck fixture is further provided with a spring, the lever is used to fix the second part by the spring pressure of the spring, and is resisted by the spring pressure of the spring The force is applied to the aforementioned joystick to liberate the aforementioned second part. For example, the semiconductor manufacturing apparatus of the scope of application for patent No. 1 further includes: (1) a jacking unit that sucks and lifts the above-mentioned crystal grains under a dicing tape; and (ii) a pick-up head that is equipped with the aforementioned chuck. For example, the semiconductor manufacturing device under the scope of application for patent No. 14 further includes: (1) an intermediate stage for mounting the crystal grains picked up by the aforementioned pick-up head; and a bonding head for the wafers to be mounted on the intermediate stage. The grains are bonded to the substrate or the bonded grains. For example, the semiconductor manufacturing device according to item 1 of the application, wherein the crystal grains further include a crystal grain bonding film between the crystal grains and the dicing tape. A method for manufacturing a semiconductor device, comprising: (a) preparing a semiconductor manufacturing device as described in any one of claims 1 to 16 of a patent application scope; (b) preparing to hold a dicing tape having a crystal grain Wafer ring process; and (c) the process of picking up the aforementioned die with the aforementioned chuck. For example, the method for manufacturing a semiconductor device according to item 17 of the scope of patent application, further comprising: (d) a process of preparing a substrate; and (e) a process of bonding the aforementioned crystal grains to the aforementioned substrate or the crystal grains already bonded. For example, the method of manufacturing a semiconductor device according to item 18 of the patent application, wherein: (c) the above-mentioned project further includes a process of placing the picked-up grains on an intermediate platform, and (ii) the above-mentioned (e) project further includes the above-mentioned intermediate platform The process of picking up the aforementioned grains.