TW201834790A - Chemical mechanical polishing control system and temperature sensing device thereof - Google Patents

Abstract

A chemical mechanical polishing control system and a temperature sensing device thereof are disclosed. The temperature sensing device is disposed in a polishing device of the chemical mechanical polishing control system. The polishing device is controlled by a control device to polish a wafer. The temperature sensing device includes a plurality of detection module, a micro processing module, and a wireless transmission module. The plurality of detection module is used to touch a plurality of temperature sensing points on the wafer for detecting a plurality of temperature signal of the wafer while the wafer is being polished. The micro processing module is used for calculating a temperature gradient value of the wafer based on the plurality of temperature signal. The wireless transmission module is used for transmitting the temperature gradient value to the control device via a wireless transmission protocol.

Description

Chemical mechanical polishing control system and temperature sensing device thereof

The invention relates to a chemical mechanical polishing control system and a temperature sensing device thereof, in particular to a chemical mechanical polishing control system and a temperature sensing device thereof for conveniently measuring temperature of a wafer.

The semiconductor component manufacturing process can be divided into several steps, such as Wafer Fabrication, Wafer Probe, Packaging, and Initial Test and Final Test, among which The wafer processing process can be subdivided into repeated steps such as cleaning, Oxidation, deposition, lithography, etching, and polishing. In the prior art, Chemical Mechanical Polishing (CMP) is the main comprehensive planarization technique in semiconductor manufacturing. The CMP is to place the wafer between the rotatable polishing head and the polishing pad, and then continuously eject the chemical reaction-reacting reagent. A planarization technique that removes a deposited layer on a wafer by interaction between chemical etching and mechanical grinding. In recent years, semiconductor processes have become more and more detailed, and the importance of CMP processes has become more prominent. However, CMP processes require a fast surface inspection tool that can quickly measure surface features to understand wafer surface quality and accuracy. If the CMP process can be controlled in real time, the yield of the wafer process can be improved. When it is found that the quality control standard cannot be achieved, the defective product will be produced and the yield will drop. Therefore, the recycling can be eliminated as early as possible, so as to avoid the subsequent wafer process and waste the manufacturing cost of the wafer.

Therefore, it is necessary to invent a new chemical mechanical polishing control system and its temperature sensing device to solve the lack of prior art.

The main object of the present invention is to provide a temperature sensing device that can conveniently measure the temperature of a wafer.

Another primary object of the present invention is to provide a chemical mechanical polishing control system having the above temperature sensing device.

To achieve the above object, the temperature sensing device of the present invention is incorporated in a polishing apparatus in which a chemical mechanical polishing control system is provided, which is controlled by a control device to polish a wafer. The temperature sensing device includes a plurality of detection modules, a micro processing module and a wireless transmission module. The plurality of detection modules are in contact with a plurality of temperature sensing points on the wafer for detecting a plurality of temperature signals while the wafer is being polished. The micro-processing module is electrically connected to the plurality of detection modules, and the temperature gradient value of the wafer is calculated according to the complex temperature signal. The wireless transmission module is electrically connected to the micro processing module for transmitting a temperature gradient value to the control device via a wireless transmission protocol.

The chemical mechanical polishing control system of the present invention comprises a control device, a polishing device and a temperature sensing device. The polishing device is electrically connected to the control device, and the polishing device is controlled by the control device to polish the wafer. The temperature sensing device includes a plurality of detection modules, a micro processing module and a wireless transmission module. The plurality of detection modules are in contact with a plurality of temperature sensing points on the wafer for detecting a plurality of temperature signals while the wafer is being polished. The micro-processing module is electrically connected to the plurality of detection modules, and the temperature gradient value of the wafer is calculated according to the complex temperature signal. The wireless transmission module is electrically connected to the micro processing module for transmitting the temperature gradient value to the control device via the wireless transmission protocol, thereby adjusting the polishing device.

In order to enable the reviewing committee to better understand the technical contents of the present invention, the preferred embodiments are described below.

Hereinafter, please refer to FIG. 1 for a schematic diagram of the structure of the chemical mechanical polishing control system of the present invention.

The chemical mechanical polishing control system 1 of the present invention includes a control device 10, a polishing device 20, and a temperature sensing device 30. The control device 10 can be made by a hardware device, a software program with a hardware device or a firmware with a hardware device, such as a desktop computer, a notebook computer, etc., but the invention is not limited thereto. this. The control device 10 is electrically connected to the polishing device 20 for adjusting the polishing device 20 such that the polishing device 20 can polish a wafer 2. The temperature sensing device 30 is mounted in the polishing device 20 to directly contact the wafer 2 to be polished, thereby measuring the temperature gradient value of the wafer 2 during polishing.

In one embodiment of the present invention, the temperature sensing device 30 can include a plurality of detection modules 31, a micro processing module 32, and a wireless transmission module 33. The plurality of detection modules 31 are configured to contact a plurality of temperature sensing points 2a, 2b, 2c, 2d, and 2e on the wafer 2 for obtaining a plurality of temperature signals when the wafer 2 is polished. Please refer to FIG. 1A as a schematic diagram of the position of the detection module of the present invention on the wafer. For example, in one embodiment of the present invention, the temperature sensing device 30 includes five detecting modules 31, and the five detecting modules 31 measure a center temperature sensing point 2a and two paths of the wafer 2. The temperature sensing points 2b, 2c and the temperature signals of the two circumferential direction temperature sensing points 2d, 2e, wherein the temperature sensing points 2b, 2c and the central temperature sensing point 2a are on the same straight line, the temperature sensing point The 2d, 2e and temperature sensing points 2b are located on the same circumferential radius. It should be noted that the positions and the numbers of the temperature sensing points 2a to 2e described above are merely illustrative, and the present invention is not limited thereto.

The micro-processing module 32 is electrically connected to the plurality of detecting modules 31 for instantaneously calculating the temperature gradient value of the wafer 2 according to the complex temperature signals, since the positions of the temperature sensing points 2a to 2e are respectively located in the crystal The center point of the circle 2, the radial direction and the circumferential direction, so that a more accurate temperature gradient value can be obtained. The wireless transmission module 33 is electrically connected to the micro processing module 32 for transmitting the temperature gradient value to the control device 10 of the chemical mechanical polishing control system 1 by wireless transmission. The wireless transmission method may be Wi-Fi, Bluetooth, near field communication, etc., but the present invention is not limited thereto. When the control device 10 receives the current temperature gradient value of the wafer 2 via the wireless transmission module 33, the characteristics of the current wafer 2 can be further analyzed to moderately adjust the polishing device 20. For example, the control device 10 further calculates a concentration gradient value of the wafer 2 currently undergoing a chemical reaction, thereby adjusting the polishing process of the wafer by the polishing device 20 according to the concentration gradient value, but the invention is not limited thereto.

2 and FIG. 3, FIG. 2 is a schematic view showing the appearance of the polishing apparatus of the chemical mechanical polishing control system of the present invention, and FIG. 3 is a schematic side view of the polishing apparatus of the chemical mechanical polishing control system of the present invention.

In one embodiment of the invention, the polishing apparatus 20 includes a polishing head 21, a polishing pad 22, and a showerhead 23. The polishing head 21 is fixed to the wafer 2 and connected to the first rotating shaft 24 to rotate the wafer 2 at a fixed point. The plurality of detecting modules 31 are disposed in the polishing head 21 to directly contact the wafer 2. The polishing pad 22 is connected to the second rotating shaft 25 to rotate in the opposite direction by the second rotating shaft 25, wherein the wafer 2 is disposed between the polishing head 21 and the polishing pad 22, and the polishing head 21 and the polishing pad 22 rotate simultaneously. The polishing pad 22 mechanically polishes the wafer 2. When the nozzle 23 rotates the polishing head 21 and the polishing pad 22, the nozzle 23 sprays a polishing liquid 231 on the polishing pad 22, whereby the polishing liquid 231 can be placed between the wafer 2 and the polishing pad 22 to provide a wafer. 2 chemical reaction during polishing. In this way, since the plurality of detection modules 31 directly contact the wafer 2, the plurality of detection modules 31 can detect the plurality of temperature signals while the wafer 2 is polished, that is, the micro processing module. 32 can instantly transfer the temperature gradient value of the wafer 2 to the control device 10, and let the control device 10 adjust the process of the polishing device 20 at any time to reduce the probability of wafer 2 being damaged. It should be noted that the construction of the polishing apparatus 20 shown in FIGS. 2 and 3 is merely illustrative, and the present invention does not limit the polishing apparatus 20 of the same configuration to perform chemical mechanical polishing of the wafer 2.

In addition to being configurable as a hardware device, a software program, a firmware, or a combination thereof, each of the above modules may also be configured by a circuit loop or other suitable type; and, in addition to being individually configurable, each module may also be combined. Type configuration. In addition, the present embodiment is merely illustrative of preferred embodiments of the present invention, and in order to avoid redundancy, all possible combinations of variations are not described in detail. However, those of ordinary skill in the art will appreciate that the various modules or components described above are not necessarily required. In order to implement the invention, other well-known modules or elements of more detail may also be included. Each module or component may be omitted or modified as needed, and no other modules or components may exist between any two modules.

With the temperature sensing device 10 and the chemical mechanical polishing control system 1 of the present invention, it is convenient to measure the temperature of the wafer 2 at any time when the wafer 2 is manufactured, and the yield of the wafer 2 can be effectively improved.

It should be noted that the above is only an embodiment, and is not limited to the embodiment. For example, those who do not depart from the basic structure of the present invention should be bound by the scope of the patent, and the scope of the patent application shall prevail.

1‧‧‧Chemical mechanical grinding control system

10‧‧‧Control device

20‧‧‧ grinding device

21‧‧‧ polishing head

22‧‧‧ polishing pad

23‧‧‧Spray

231‧‧‧Slurry

24‧‧‧First shaft

25‧‧‧second shaft

30‧‧‧Temperature sensing device

31‧‧‧Multiple detection modules

32‧‧‧Micro Processing Module

33‧‧‧Wireless Transmission Module

2‧‧‧ wafer

2a, 2b, 2c, 2d, 2e‧‧‧ temperature sensing points

1 is a schematic view showing the structure of a chemical mechanical polishing control system of the present invention. FIG. 1A is a schematic diagram showing the position of a plurality of detection modules of the present invention on a wafer. 2 is a schematic view showing the appearance of a polishing apparatus of the chemical mechanical polishing control system of the present invention. Figure 3 is a side elevational view of the polishing apparatus of the chemical mechanical polishing control system of the present invention.

Claims (8)

A temperature sensing device is disposed in a polishing device of a chemical mechanical polishing control system, wherein the polishing device is controlled by the control device to polish a wafer; the temperature sensing device comprises: a plurality of detection modes The group is in contact with a plurality of temperature sensing points on the wafer for detecting a plurality of temperature signals while the wafer is being polished; and a micro processing module electrically connecting the plurality of detection modules Calculating a temperature gradient value of the wafer according to the complex temperature signal; and a wireless transmission module electrically connecting the microprocessor module to transmit the temperature gradient value via a wireless transmission protocol To the control device. The temperature sensing device of claim 1, wherein the temperature sensing device comprises five detection modules. The temperature sensing device of claim 2, wherein the five detecting modules measure a center temperature sensing point, two radial temperature sensing points, and two circumferential temperature senses of the wafer. a temperature signal of the measuring point, wherein the two radial temperature sensing points are on the same line as the central temperature sensing point, and the two circumferential temperature sensing points are in the same position as one of the radial temperature sensing points On the radius of the circumference. A chemical mechanical polishing control system comprising: a control device; a polishing device electrically connected to the control device, the polishing device is controlled by the control device to polish a wafer; and a temperature sensing device, including The plurality of detection modules are in contact with a plurality of temperature sensing points on the wafer for detecting a plurality of temperature signals while the wafer is being polished; a micro processing module electrically connecting the The plurality of detection modules are configured to calculate a temperature gradient value of the wafer based on the plurality of temperature signals; and a wireless transmission module electrically connected to the microprocessor module for transmitting via a wireless transmission protocol The temperature gradient value is transmitted to the control device to adjust the polishing device. The chemical mechanical polishing control system of claim 4, wherein the temperature sensing device comprises five detection modules. The chemical mechanical polishing control system of claim 5, wherein the five detection modules measure a central temperature sensing point, two radial temperature sensing points, and two circumferential temperatures of the wafer. a temperature signal of the sensing point, wherein the two radial temperature sensing points are on the same line as the central temperature sensing point, and the two circumferential temperature sensing points are in a radial temperature sensing point On the same radius of the circumference. The chemical mechanical polishing control system according to any one of claims 4 to 6, wherein the polishing apparatus comprises: a polishing head fixed to the wafer and connected to a first rotating shaft to make the wafer system Rotating at a certain point; a polishing pad is coupled to a second rotating shaft for rotation by the second rotating shaft, wherein the wafer is disposed between the polishing head and the polishing pad, and the polishing head and the polishing head When the polishing pad is rotated simultaneously, the polishing pad is used for polishing the wafer; and a nozzle is used to spray a polishing liquid on the polishing pad when the polishing head and the polishing pad rotate, thereby the polishing liquid It can be placed between the wafer and the polishing pad to provide a chemical reaction during polishing of the wafer. The chemical mechanical polishing control system of claim 7, wherein the plurality of detection modules are disposed in the polishing head for contacting the wafer while the wafer is being polished.