TW201815503A - Optical homogenization device and laser bonding apparatus containing the same - Google Patents
Optical homogenization device and laser bonding apparatus containing the same Download PDFInfo
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- 238000000265 homogenisation Methods 0.000 title claims abstract description 47
- 230000003287 optical effect Effects 0.000 title claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000013307 optical fiber Substances 0.000 claims description 29
- 230000000149 penetrating effect Effects 0.000 claims description 29
- 238000003466 welding Methods 0.000 claims description 28
- 238000001179 sorption measurement Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000005253 cladding Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000009434 installation Methods 0.000 claims description 2
- 230000004323 axial length Effects 0.000 claims 3
- 229910000679 solder Inorganic materials 0.000 abstract description 9
- 230000035939 shock Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 50
- 239000000758 substrate Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 24
- 238000007906 compression Methods 0.000 description 10
- 238000007731 hot pressing Methods 0.000 description 9
- 230000006835 compression Effects 0.000 description 8
- 238000003825 pressing Methods 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000002788 crimping Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
- G02B6/0086—Positioning aspects
- G02B6/009—Positioning aspects of the light source in the package
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0267—Integrated focusing lens
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
本發明有關於光均勻化模組及包括其的雷射焊接裝置，特別有關於如下的光均勻化模組及包括其的雷射焊接裝置，即，藉由以輕且緊湊的方式構成光學系，使得當進行雷射焊接時，可精密控制向上下方向驅動用於吸附被附著物(例如，半導體晶片)的吸附頭的伺服電動機，並且可進行借助調整面光源大小的焊接工作。 The present invention relates to a light homogenization module and a laser welding device including the same, and particularly to a light homogenization module and a laser welding device including the same, that is, by constructing an optical system in a light and compact manner , So that when performing laser welding, the servo motor for driving the suction head for suctioning the attached object (for example, semiconductor wafer) in the vertical direction can be precisely controlled, and the welding work by adjusting the size of the surface light source can be performed.
隨著電子產品的小型化及高功能化，從灰塵、濕氣或電氣負荷、機械負荷等各種外部環境保護半導體的封裝方式中，僅藉由現有的引線鍵合方式實現輕薄短小化存在侷限性，因此正在使用倒裝晶片焊接方式。倒裝晶片焊接方式為如下的方式，即，在作為半導體晶片的輸入輸出端子的墊上形成焊料凸塊後，反轉該半導體晶片並直接貼在載體基板或電路帶的電路圖案。 With the miniaturization and higher functionality of electronic products, there are limitations in the packaging methods of various external environmental protection semiconductors such as dust, moisture, electrical loads, mechanical loads, etc., which can only be achieved by the existing wire bonding method. , So flip chip welding is being used. The flip chip soldering method is a method in which, after solder bumps are formed on pads that are input and output terminals of a semiconductor wafer, the semiconductor wafer is inverted and directly stuck to the circuit pattern of the carrier substrate or the circuit tape.
作為用於倒裝晶片焊接的倒裝晶片焊接機，正在開發使用熱壓方式和雷射熱壓方式。在熱壓方式中，在加壓臂的內部內置有紅外線加熱器，且包括在加壓臂的下部具有用於吸附倒裝晶片的吸入孔的加壓頭。 As a flip chip bonding machine for flip chip bonding, a hot pressing method and a laser hot pressing method are being developed. In the hot pressing method, an infrared heater is built into the pressing arm, and includes a pressing head having a suction hole for sucking the flip-chip on the lower portion of the pressing arm.
熱壓方式的倒裝晶片焊接機借助導熱向倒裝晶片以 傳遞熱，因此向倒裝晶片傳遞熱量的速度慢，且為了將倒裝晶片與基板接合需要10~30分鐘，由此存在降低生產率的缺點。 The heat press type flip chip welding machine transfers heat to the flip chip by heat conduction, so the heat transfer rate to the flip chip is slow, and it takes 10 to 30 minutes to join the flip chip to the substrate, thereby reducing productivity Shortcomings.
並且，最近為了使半導體封裝體的厚度變薄，並且降低成本，而向一個基板附著半導體晶片、積體電路(IC)裝置、發光二極體(LED)裝置、電阻器、電容器、電感器、變壓器或繼電器等的電子組件裝置。在積體電路裝置經過熱壓程序的情況下，存在積體電路裝置因接受熱衝擊而產生不良的問題。 Furthermore, recently, in order to reduce the thickness of the semiconductor package and reduce costs, semiconductor wafers, integrated circuit (IC) devices, light-emitting diode (LED) devices, resistors, capacitors, and inductors are attached to one substrate. Electronic component devices such as transformers or relays. In the case where the integrated circuit device has undergone the hot pressing process, there is a problem that the integrated circuit device receives defects due to thermal shock.
為了防止上述問題，在進行熱壓程序後，向基板附著積體電路裝置的情況下，將積體電路裝置附著於借助紅外線加熱器以產生規定熱量變形的基板，因此存在難以將積體電路裝置正常焊接在所定位置的問題。 In order to prevent the above-mentioned problems, when the integrated circuit device is attached to the substrate after the hot pressing process, the integrated circuit device is attached to the substrate that is deformed by a predetermined heat by the infrared heater, so it is difficult to integrate the integrated circuit device The problem of normal welding in the specified position.
另一方面，在雷射熱壓方式中，為了使倒裝晶片的電極端子與基板的焊料凸塊相向，將晶片移動至焊接位置後，向晶片的後部面照射雷射，來一邊對倒裝晶片進行加熱，一邊進行焊接。雷射熱壓方式可實施利用光纖維和光學系向基板局部性地照射雷射的方式。 On the other hand, in the laser thermal pressing method, in order to make the electrode terminals of the flip chip face the solder bumps of the substrate, after moving the wafer to the soldering position, the rear surface of the wafer is irradiated with laser light, and the flip chip The wafer is heated while being soldered. The laser hot pressing method can implement a method of locally irradiating the laser to the substrate using an optical fiber and an optical system.
圖1為示出現有光纖維的立體圖。通常，雷射熱壓方式所使用的光纖維1由纖芯2和包層3形成。纖芯2呈內側中空的圓柱形態，包層3沿著長度方向延伸而成，以包圍纖芯2的外周面。與纖芯2相比，包層3由折射率低的材料形成，射入至纖芯2的內側的雷射被全反射，並穿透纖芯2。穿透纖芯2的雷射根據位置具有高斯函數(Gaussian function)形態的能源分佈。即，光纖維1可產生如下的問題，在相同照射區域內，因雷射的能源不均勻而根據電子組件裝置的位置與基板相結合所需的時間不同。並且，當使整體 電子組件裝置與基板相結合時，存在由於對集中雷射能源的部分的電子組件裝置施加過多的熱量，而產生熱衝擊的問題。並且，附著於基板的電子組件裝置的位置可根據半成品而變得不同。因此，需要根據附著於基板的電子組件裝置的位置，調整雷射的照射區域的技術。 FIG. 1 is a perspective view showing a conventional optical fiber. Generally, the optical fiber 1 used in the laser thermal compression method is formed of a core 2 and a cladding 3. The core 2 has a cylindrical shape with a hollow inside, and the cladding 3 extends along the longitudinal direction to surround the outer peripheral surface of the core 2. Compared with the core 2, the cladding 3 is formed of a material with a low refractive index, and the laser light incident on the inside of the core 2 is totally reflected and penetrates the core 2. The laser penetrating the core 2 has an energy distribution in the form of a Gaussian function according to the position. That is, the optical fiber 1 may cause a problem that, in the same irradiation area, the time required for bonding with the substrate varies depending on the position of the electronic component device due to uneven laser energy. In addition, when the entire electronic component device and the substrate are combined, there is a problem that thermal shock is generated by applying excessive heat to the electronic component device where laser energy is concentrated. Also, the position of the electronic component device attached to the substrate may vary depending on the semi-finished product. Therefore, a technique for adjusting the laser irradiation area according to the position of the electronic component device attached to the substrate is required.
韓國核准專利號第10-1416820號(以下，稱之為「現有文獻」)公開如下的用於雷射壓接方式的倒裝晶片焊接的雷射光學裝置，即，當進行倒裝晶片焊接時，該雷射光學裝置藉由利用雷射壓接方式，來向半導體晶片照射維持規定均勻度的方形光束，以對大面積供給均勻的熱源。 Korean Approved Patent No. 10-1416820 (hereinafter referred to as "existing document") discloses a laser optical device for flip chip bonding of the laser compression bonding method, that is, when performing flip chip bonding The laser optical device irradiates the semiconductor wafer with a square beam that maintains a predetermined uniformity by using a laser compression bonding method to supply a uniform heat source to a large area.
韓國核准專利號第10-1416820號公開的雷射光學裝置400，如圖2所示，包括：鏡筒410，借助多個透鏡將藉由光纖維傳遞的雷射光束轉換為方形(square)的雷射光束，以向水平方向輸出；反射鏡430，設置於焊接頭550的上部，藉由講從鏡筒410輸出的水平方向的雷射光束轉換為垂直向下方向，來照射焊接頭550，以作為熱源傳遞至真空附著於焊接下部的擔保體晶片。 The laser optical device 400 disclosed in Korean Approved Patent No. 10-1416820, as shown in FIG. 2, includes: a lens barrel 410, which converts the laser beam transmitted by the optical fiber into a square The laser beam is output in the horizontal direction; the reflecting mirror 430 is provided on the upper part of the welding head 550, and the welding head 550 is irradiated by converting the horizontal laser beam output from the lens barrel 410 into a vertically downward direction, It is used as a heat source to transfer to the guarantor wafer attached to the lower part of the vacuum welding.
在鏡筒410配置有多個透鏡420，多個透鏡420從雷射輸入部411依次配置光束擴展器(Beam Expander)421、準直透鏡(Collimation Lens)422、聚焦透鏡(Focusing Lens)423、非球面透鏡(Aspheric Lens)424、物鏡(Objectice Lens)425。光束擴展器421對藉由雷射輸入部411輸入的雷射光束進行擴張且擴散，準直透鏡422將擴張的雷射光束準直成平行光，聚焦透鏡423調整藉由準直透鏡422準直的雷射光束的焦點，非球面透鏡424借助非球面使雷射光束明顯，物鏡425借助雷射輸出部412向外部輸出雷射光束。 A plurality of lenses 420 are arranged in the lens barrel 410, and the plurality of lenses 420 are sequentially arranged from the laser input unit 411 a beam expander (Beam Expander) 421, a collimating lens (Collimation Lens) 422, a focusing lens (Focusing Lens) 423, non- Spherical lens (Aspheric Lens) 424, objective lens (Objectice Lens) 425. The beam expander 421 expands and diffuses the laser beam input through the laser input unit 411, the collimating lens 422 collimates the expanded laser beam into parallel light, and the focusing lens 423 is adjusted to collimate by the collimating lens 422 The focal point of the laser beam, the aspheric lens 424 makes the laser beam obvious through the aspheric surface, and the objective lens 425 outputs the laser beam to the outside through the laser output unit 412.
根據這些現有文獻，多個透鏡420使具有高斯函數形態的能源分佈的雷射轉換為方形的雷射光束。因此，存在安裝有多個透鏡420的鏡筒410變長、變重的缺點。 According to these existing documents, a plurality of lenses 420 convert a laser having an energy distribution in the form of a Gaussian function into a square laser beam. Therefore, there is a disadvantage that the lens barrel 410 on which a plurality of lenses 420 are mounted becomes long and heavy.
另一方面，在現有光學系中，有包括多種透鏡的產品，該多種透鏡在光纖維安裝準直透鏡，將具有高斯函數形態的能源分佈的雷射轉換為方形雷射光束，且以可調整光束大小的方式實現。這種光學系由於需要在光纖維安裝準直透鏡，因而具有難以製造且費用高的缺點。 On the other hand, in the existing optical system, there are products that include a variety of lenses, which are equipped with collimating lenses on the optical fiber to convert the laser with energy distribution in the form of a Gaussian function into a square laser beam with adjustable The beam size is achieved. Since such an optical system needs to install a collimating lens on the optical fiber, it has the disadvantages of being difficult to manufacture and expensive.
最近上市的半導體晶片中，在焊盤上形成多個電極端子，多個電極端子由以規定高度形成的銅填充劑和以一體的方式形成於該銅填充劑的上部面的傳導性焊料形成。多個電極端子由端子之間的距離小於60μm的小螺距(fine pitch)的方式形成。因此，半導體晶片與基板的排列尤為重要。當半導體晶片與基板的排列變歪時，會產生因半導體晶片的多個電極端子之間的傳導性焊料相互接觸而產生架橋現象，或產生電極端子中的一部分與基板的焊料凸塊不接觸的問題。 In a semiconductor wafer recently marketed, a plurality of electrode terminals are formed on a pad, and the plurality of electrode terminals are formed of a copper filler formed at a predetermined height and a conductive solder formed integrally on the upper surface of the copper filler. The plurality of electrode terminals are formed by a fine pitch with a distance between the terminals of less than 60 μm. Therefore, the arrangement of the semiconductor wafer and the substrate is particularly important. When the arrangement of the semiconductor wafer and the substrate is distorted, a bridging phenomenon may occur due to the conductive solder between the plurality of electrode terminals of the semiconductor wafer, or some of the electrode terminals may not contact the solder bumps of the substrate problem.
並且，雷射熱壓方式可由在吸附半導體晶片的狀態下，對於基板一邊壓接半導體裝置，一邊進行雷射焊接的方式實施。但是，若用於吸附半導體晶片的吸附頭的平整度變得不同，則因半導體晶片的電極端子不能正確地對基板的焊料凸塊傳遞壓接力，從而可產生焊接不良。並且，在雷射熱壓方式中，在對於基板的半導體晶片的壓接力過大的情況下，半導體晶片的多個電極端子之間的傳導性焊料相互接觸，從而可產生架橋現象。 In addition, the laser thermocompression method can be implemented by a method of performing laser welding while crimping the semiconductor device to the substrate in a state where the semiconductor wafer is attracted. However, if the flatness of the suction head for sucking the semiconductor wafer becomes different, the electrode terminals of the semiconductor wafer cannot accurately transmit the crimping force to the solder bumps of the substrate, which may cause soldering defects. In addition, in the laser thermocompression method, when the crimping force against the semiconductor wafer of the substrate is excessively large, the conductive solder between the plurality of electrode terminals of the semiconductor wafer contacts each other, and a bridging phenomenon may occur.
並且，雷射熱壓方式在借助半導體晶片吸附半導體晶 片的狀態下，使用相對於基板進行上下移動的伺服電動機。因此，在雷射熱壓方式中，在光均勻化模組中安裝有多個透鏡的鏡筒的長度短且輕，才能更準確的控制伺服電動機。 In addition, the laser hot pressing method uses a servo motor that moves up and down relative to the substrate in a state where the semiconductor wafer is attracted by the semiconductor wafer. Therefore, in the laser thermal compression method, the length of the lens barrel with multiple lenses installed in the light homogenization module is short and light, so that the servo motor can be controlled more accurately.
本發明基於如上所述的背景而提出，本發明提供如下光均勻化模組及包括其的雷射焊接裝置，即，藉由以輕且緊湊的方式實現光學系，當進行雷射焊接時，可精密控制向上下方向驅動用於吸附被附著物(例如，半導體晶片)的吸附頭的伺服電動機。 The present invention is proposed based on the above background. The present invention provides a light homogenization module and a laser welding device including the same, that is, by implementing the optical system in a light and compact manner, when performing laser welding, It is possible to precisely control the servo motor that drives the suction head for suctioning the adherend (for example, semiconductor wafer) in the up and down directions.
並且，本發明提供製造費用低廉，且可進行借助調整面光源大小的焊接工作的光均勻化模組及包括其的雷射焊接裝置。 In addition, the present invention provides a light homogenization module and a laser welding device including the same, which can be manufactured at a low cost and can perform welding by adjusting the size of the surface light source.
可藉由對以下的實施例進行的說明來容易理解本發明的其他目的。 The other objects of the present invention can be easily understood by describing the following examples.
為了實現上述目的本發明提供如下的光均勻化模組，該光均勻化模組包括：光纖維，數值孔徑(NA)為0.2以上且0.3以下，具有使雷射穿透的纖芯以及包圍該纖芯且沿著長度方向延伸的包層；導光部，使從該光纖維射出的雷射成為具有均勻的能源分佈的面光源；鏡筒，以相互隔開的方式安裝有多個透鏡模組，用於使從該導光部射出的面光源照射被附著物的照射區域；以及鏡筒驅動部，使該多個透鏡模組單獨進行上升或下降，以調整面光源的照射區域的範圍和加熱溫度。 In order to achieve the above object, the present invention provides a light homogenization module including: an optical fiber, a numerical aperture (NA) of 0.2 or more and 0.3 or less, a fiber core that penetrates a laser, and a surrounding The core is a cladding extending in the longitudinal direction; the light guide part makes the laser emitted from the optical fiber into a surface light source with a uniform energy distribution; the lens barrel is installed with a plurality of lens molds spaced apart from each other Group for irradiating the surface light source emitted from the light guide part to the irradiation area of the attached object; and the lens barrel driving part to individually raise or lower the plurality of lens modules to adjust the range of the irradiation area of the surface light source And heating temperature.
本發明的光均勻化模組的特徵在於，就導光部而言，使用具有高穿透率的母材作為使雷射穿透的介質，以剖面為四方形的正六面體的方式形成，以與該光纖維具有0.2mm以上且0.5mm以下的隔開距離的方式設置，在與雷射穿透的光軸水平的側面形成全反射塗敷膜，在與該光軸垂直的上部面和下部面形成無反射塗敷膜。 The light homogenization module of the present invention is characterized in that, as for the light guide section, a base material having a high transmittance is used as a medium through which the laser penetrates, and is formed in a regular hexahedron with a square cross section. It is arranged so as to have a separation distance of 0.2 mm or more and 0.5 mm or less from the optical fiber, and a total reflection coating film is formed on the side surface horizontal to the optical axis through which the laser penetrates, and on the upper surface perpendicular to the optical axis and A non-reflective coating film is formed on the lower surface.
本發明的光均勻化模組的特徵在於，多個透鏡模組包括：聚光透鏡，用於對從導光部射出的雷射進行聚光；準直透鏡(Collimation Lens)，用於將穿透該聚光透鏡的雷射準直成平行光；以及聚焦透鏡，用於調整由該準直透鏡準直的雷射的焦點。 The light homogenization module of the present invention is characterized in that a plurality of lens modules include: a condenser lens for condensing the laser light emitted from the light guide portion; a collimation lens (Collimation Lens) for The laser transmitted through the condenser lens is collimated into parallel light; and a focusing lens is used to adjust the focus of the laser collimated by the collimating lens.
本發明的光均勻化模組的特徵在於，多個透鏡模組還包括：第一圓柱透鏡，用於調整穿透聚焦透鏡的雷射的第一軸方向長度；以及第二圓柱透鏡，用於調整穿透該第一圓柱透鏡的雷射的第二軸方向長度，該第一軸方向長度與第二軸方向長度相互正交。 The light homogenization module of the present invention is characterized in that the plurality of lens modules further includes: a first cylindrical lens for adjusting the length of the laser beam passing through the focusing lens in the first axis direction; and a second cylindrical lens for The length of the laser beam penetrating the first cylindrical lens in the second axis direction is adjusted, and the length in the first axis direction and the length in the second axis direction are orthogonal to each other.
本發明的雷射焊接裝置包括：基座，包括支撐被附著物使其固定的固定部以及用於移動該固定部的驅動部；晶片供給裝置，用於供給要向被附著物接合的半導體晶片；晶片轉移模組，包括用於支撐從該晶片供給裝置供給的半導體晶片的支撐板，以及用於向左右方向驅動該支撐板的支撐板驅動模組；吸附頭，用於吸附借助該晶片轉移模組移送的半導體晶片，根據晶片對齊控制信號進行旋轉；光均勻化模組，形成於該吸附頭的上部，藉由將高斯形態的雷射光束轉換為面光源，來照射被附著物的照射區域；驅動模組，用於向上下方向驅動該吸附頭和光均勻化模組，使得半導體晶片安裝於被附著物；視覺模組，包括圖像拍攝模組以及拍攝模組移 送部，該圖像拍攝模組用於產生吸附於該吸附頭的半導體晶片的圖像和固定於該基座的被附著物的圖像，該拍攝模組移送部用於使圖像拍攝模組移動至該吸附頭與基座之間；以及控制部，用於控制整體結構的工作。 The laser welding apparatus of the present invention includes: a pedestal including a fixing portion that supports and fixes an attached object and a driving portion for moving the fixed portion; and a wafer supply device for supplying a semiconductor wafer to be bonded to the attached object ; A wafer transfer module, including a support plate for supporting the semiconductor wafer supplied from the wafer supply device, and a support plate drive module for driving the support plate in the left and right directions; an adsorption head for adsorbing and transferring by the wafer The semiconductor wafer transferred by the module rotates according to the wafer alignment control signal; the light homogenization module is formed on the upper part of the adsorption head, and irradiates the attached object by converting the Gaussian laser beam into a surface light source Area; drive module, used to drive the suction head and the light homogenization module in the up and down direction, so that the semiconductor chip is installed on the attached object; the vision module, including the image shooting module and the shooting module transfer section, the image The photographing module is used to generate the image of the semiconductor wafer adsorbed on the adsorption head and the image of the attached object fixed on the base, and the photographing module transfer part is used to move the image photographing module to the adsorption head Between the base and the control part, used to control the work of the overall structure.
該控制部可包括排列位置控制部，利用從視覺模組產生的吸附於吸附頭的半導體晶片的圖像和固定於基座的圖像，向吸附頭的驅動部輸出晶片對齊控制信號，並向基座的驅動部輸出基座位置控制信號；安裝控制部，用於控制該驅動模組，以使吸附於該吸附頭的晶片安裝於被附著物；以及光均勻化模組控制部，用於控制該光均勻化模組，以使從該光均勻化模組轉換的面光源照射被附著物的照射區域。 The control section may include an arrangement position control section, which uses the image of the semiconductor wafer adsorbed to the suction head and the image fixed to the pedestal generated from the vision module to output a wafer alignment control signal to the drive section of the suction head, and to The driving part of the base outputs the base position control signal; the mounting control part is used to control the driving module so that the chip adsorbed to the suction head is mounted on the attached object; and the light homogenization module control part is used to The light homogenization module is controlled so that the surface light source converted from the light homogenization module illuminates the irradiation area of the attached object.
如上所述，本發明的光均勻化模組的導光部使用具有高穿透率的母材作為使雷射穿透的介質，以剖面為四方形的正六面體的方式形成，與光纖維具有0.2mm以上且0.5mm以下的隔開距離，在與雷射穿透的光軸水平的側面形成全反射塗敷膜，在與該光軸垂直的上部面和下部面形成無反射塗敷膜，從而可具有如下的優點，即，藉由以輕且緊湊的方式實現光學系，當進行雷射焊接時，可精密控制向上下方向驅動用於吸附被附著物(例如，半導體晶片)的吸附頭的伺服電動機。 As described above, the light guide portion of the light homogenization module of the present invention uses a base material with high transmittance as a medium for laser penetration, and is formed in the form of a regular hexahedron with a square cross section. With a separation distance of 0.2 mm or more and 0.5 mm or less, a total reflection coating film is formed on the side surface horizontal to the optical axis through which the laser penetrates, and a non-reflection coating film is formed on the upper surface and the lower surface perpendicular to the optical axis , Which can have the advantage that by implementing the optical system in a light and compact manner, when laser welding is performed, it can be precisely controlled to drive the suction for adsorbing the adherend (for example, semiconductor wafer) in the up and down direction The servo motor of the head.
本發明的均勻化模組包括：聚光透鏡，用於對從該導光部射出的雷射進行聚光；準直透鏡(Collimation Lens)，用於將穿透該聚光透鏡的雷射準直成平行光；聚焦透鏡，用於調整由該準直 透鏡準直的雷射的焦點；第一圓柱透鏡，用於調整穿透該聚焦透鏡的雷射的第一軸方向長度；以及第二圓柱透鏡，用於調整穿透該第一圓柱透鏡的雷射的第二軸方向長度，該第一軸方向長度與第二軸方向長度相互正交，從而存在製造費用低廉，且可藉由調整面光源大小來進行焊接工作的優點。 The homogenization module of the present invention includes: a condensing lens for condensing the laser beam emitted from the light guide portion; a collimation lens (Collimation Lens) for collimating the laser penetrating the condensing lens Straight into parallel light; a focusing lens for adjusting the focal point of the laser collimated by the collimating lens; a first cylindrical lens for adjusting the length of the laser in the first axis direction penetrating the focusing lens; and a second The cylindrical lens is used to adjust the length of the laser beam penetrating the first cylindrical lens in the second axis direction. The length of the first axis direction and the length of the second axis direction are orthogonal to each other. The advantages of surface light source for welding work.
1‧‧‧光纖維 1‧‧‧ optical fiber
2‧‧‧纖芯 2‧‧‧Core
3‧‧‧包層 3‧‧‧cladding
10‧‧‧基板 10‧‧‧ substrate
11‧‧‧電子組件裝置 11‧‧‧Electronic component device
12‧‧‧積體電路裝置 12‧‧‧Integrated circuit device
100‧‧‧雷射熱壓焊接裝置 100‧‧‧Laser hot press welding device
105‧‧‧晶片供給裝置 105‧‧‧chip supply device
110‧‧‧晶片轉移模組 110‧‧‧chip transfer module
115‧‧‧被附著物移送模組 115‧‧‧ Attachment transfer module
120‧‧‧光均勻化模組 120‧‧‧Light homogenization module
130‧‧‧吸附頭 130‧‧‧Adsorption head
140‧‧‧基座 140‧‧‧Dock
150‧‧‧視覺模組 150‧‧‧vision module
160‧‧‧驅動模組 160‧‧‧Drive module
170‧‧‧雷射產生器 170‧‧‧Laser generator
180‧‧‧真空產生器 180‧‧‧Vacuum generator
400‧‧‧雷射光學裝置 400‧‧‧Laser optics
410‧‧‧鏡筒 410‧‧‧tube
411‧‧‧雷射輸入部 411‧‧‧Laser input
412‧‧‧雷射輸出部 412‧‧‧Laser output section
420‧‧‧透鏡 420‧‧‧Lens
421‧‧‧光束擴展器 421‧‧‧beam expander
422‧‧‧準直透鏡 422‧‧‧collimating lens
423‧‧‧聚焦透鏡 423‧‧‧focus lens
424‧‧‧非球面透鏡 424‧‧‧Aspherical lens
425‧‧‧物鏡 425‧‧‧Objective
430‧‧‧反射鏡 430‧‧‧Reflecting mirror
550‧‧‧焊接頭 550‧‧‧welding head
1210‧‧‧光纖維 1210‧‧‧Optical Fiber
1220‧‧‧導光部 1220‧‧‧Light guide
1230‧‧‧透鏡模組 1230‧‧‧Lens module
1231‧‧‧聚光透鏡 1231‧‧‧Condenser lens
1232‧‧‧準直透鏡 1232‧‧‧collimating lens
1233‧‧‧聚焦透鏡 1233‧‧‧focus lens
1234‧‧‧第一圓柱透鏡 1234‧‧‧First cylindrical lens
1235‧‧‧第二圓柱透鏡 1235‧‧‧Second cylindrical lens
A1‧‧‧第一照射區域 A1‧‧‧First irradiation area
A2‧‧‧第二照射區域 A2‧‧‧Second irradiation area
A3‧‧‧第三照射區域 A3‧‧‧The third irradiation area
圖1為示出現有光纖維的立體圖。 FIG. 1 is a perspective view showing a conventional optical fiber.
圖2為示出現有光均勻化模組的立體圖。 2 is a perspective view showing a conventional light homogenization module.
圖3為用於說明本發明雷射熱壓焊接裝置的例示圖。 FIG. 3 is an illustration for explaining the laser thermal compression welding apparatus of the present invention.
圖4為示出本發明一實施例的光均勻化模組的例示圖。 FIG. 4 is an illustration showing a light homogenization module according to an embodiment of the invention.
圖5為示出本發明一實施例的穿透第一圓柱透鏡的雷射的照射區域的例示圖。 FIG. 5 is an illustration showing an irradiation area of a laser penetrating a first cylindrical lens according to an embodiment of the invention.
圖6為示出本發明一實施例的穿透第二圓柱透鏡的雷射的照射區域的例示圖。 6 is an illustration showing an irradiation area of a laser penetrating through a second cylindrical lens according to an embodiment of the invention.
圖7為示出本發明一實施例的光均勻化模組的雷射的照射區域的例示圖。 FIG. 7 is an illustration showing the laser irradiation area of the light homogenization module according to an embodiment of the invention.
以下，參照附圖說明本發明。但是，本發明能夠以多種不同形式來實現，因此，不限定於在這裡說明的實施例。而且，為了明確說明本發明，在附圖中省略與說明無關的部分，在整個說明書中，對類似的部分使用類似的元件符號。 Hereinafter, the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different forms, so it is not limited to the embodiments described here. In addition, in order to clearly explain the present invention, parts that are not related to the description are omitted in the drawings, and similar element symbols are used for similar parts throughout the specification.
本說明書中所使用的術語僅為了說明特定的實施例而被使用，並非意圖限定本發明。若在文意上沒有明顯不同的意 思，則單數形式表述包括複數形式表述。在本說明書中，「包括」或「具有」等術語是指在說明書中所記載的特徵、數目、步驟、動作、結構要素、組件或它們的組合的存在，而應理解為不預先排除一個或一個以上的其他特徵、數目、步驟、動作、結構要素、組件或它們的組合的存在或附加功能性。 The terminology used in this specification is used only to describe specific embodiments, and is not intended to limit the present invention. If there is no obvious difference in meaning, the singular expression includes the plural expression. In this specification, the terms "including" or "having" refer to the existence of the features, numbers, steps, actions, structural elements, components, or combinations thereof described in the specification, and should be understood as not precluding one or The presence or additional functionality of more than one other feature, number, step, action, structural element, component, or combination thereof.
如圖3所示，本發明的雷射熱壓焊接裝置100可大致包括晶片供給裝置105、晶片轉移模組110、被附著物移送模組115、光均勻化模組120、吸附頭130、基座140、視覺模組150、驅動模組160、雷射產生器170以及真空產生器180。 As shown in FIG. 3, the laser thermal compression welding apparatus 100 of the present invention may generally include a wafer supply device 105, a wafer transfer module 110, an attached object transfer module 115, a light homogenization module 120, an adsorption head 130, and a substrate The base 140, the vision module 150, the driving module 160, the laser generator 170 and the vacuum generator 180.
晶片供給裝置105可包括將晶片從晶片分離的噴射模組和將分離的晶片反轉後安裝在支撐板的翻轉模組。晶片轉移模組110可包括用於支撐從晶片供給裝置105供給的晶片的支撐板和用於使支撐板左右驅動的支撐板驅動模組。被附著物移送模組115將被附著物P從上傳器移送至基座140，在基座140被雷射熱壓焊接的被附著物P被移送至下傳器。被附著物P為用於附著電子組件裝置和積體電路裝置等的半導體裝置的基板，可以是在銅填充劑上形成焊料S的。 The wafer supply device 105 may include an injection module that separates the wafer from the wafer and an inversion module that mounts the support plate after inverting the separated wafer. The wafer transfer module 110 may include a support plate for supporting wafers supplied from the wafer supply device 105 and a support plate drive module for driving the support plate left and right. The attached object transfer module 115 transfers the attached object P from the uploader to the base 140, and the attached object P welded to the base 140 by laser thermal compression is transferred to the down conveyor. The adherend P is a substrate for attaching a semiconductor device such as an electronic component device, an integrated circuit device, and the like, and the solder S may be formed on a copper filler.
如圖4所示，光均勻化模組120可大致包括光纖維1210、使從該光纖維射出的雷射轉換為具有均勻的能源分佈的面光源的導光部1220、使從導光部1220射出的面光源照射被附著物P的照射區域的多個透鏡模組1230。 As shown in FIG. 4, the light homogenization module 120 may generally include an optical fiber 1210, a light guide 1220 that converts laser light emitted from the optical fiber into a surface light source with a uniform energy distribution, and a secondary light guide 1220 The emitted surface light source illuminates the plurality of lens modules 1230 in the irradiation area of the adherend P.
光纖維1210具有纖芯2和包層3，該纖芯2的內側穿透雷射，該包層3包圍該纖芯2，且沿著長度方向延伸。與纖芯2相比，包層3由折射率低的材料實現，入射至纖芯2的內側的雷 射全反射，從而穿透纖芯2。光纖維1210的數值孔徑為0.2以上且0.3以下。數值孔徑的單位為弧度(radian)，光纖維1210的數值孔徑與從光纖維1210射出的雷射的發散角(θ)成正比。 The optical fiber 1210 has a core 2 and a cladding 3. The inner side of the core 2 penetrates the laser. The cladding 3 surrounds the core 2 and extends in the longitudinal direction. Compared with the core 2, the cladding 3 is realized by a material with a low refractive index, and the laser incident on the inner side of the core 2 is totally reflected, thereby penetrating the core 2. The numerical aperture of the optical fiber 1210 is 0.2 or more and 0.3 or less. The unit of the numerical aperture is radian, and the numerical aperture of the optical fiber 1210 is proportional to the divergence angle (θ) of the laser beam emitted from the optical fiber 1210.
在光纖維1210的數值孔徑小於0.2弧度的情況下，因雷射的發散角小，而不被轉換為具有在導光部1220均勻化的能源分佈的面光源。相反地，在光纖維1210的數值孔徑大於0.3弧度的情況下，從光纖維1210射出的雷射光束中的一部分不被射入至導光部1220，即，產生雷射光束的損失。 When the numerical aperture of the optical fiber 1210 is less than 0.2 radians, the laser beam has a small divergence angle and is not converted into a surface light source having a uniform energy distribution in the light guide 1220. Conversely, in the case where the numerical aperture of the optical fiber 1210 is greater than 0.3 radians, part of the laser beam emitted from the optical fiber 1210 is not incident on the light guide 1220, that is, a loss of the laser beam occurs.
導光部1220與光纖維1210以具有0.2mm以上且0.5mm以下的隔開距離的方式設置。導光部1220的長度1.0m以上且1.5m以下。當導光部1220的長度為1.0m以下時，從導光部1220的內部散射後輸出的雷射的光學均勻性降低，從而導致被附著物P的照射區域的溫度分佈不均勻。另一方面，當導光部1220的長度為1.5m以上時，雷射的光學均勻性非常優秀，但因光均勻化模組的整體長度加長，而導致製造費用上升，且不方便保存及移送光均勻化模組。 The light guide 1220 and the optical fiber 1210 are provided so as to have a separation distance of 0.2 mm or more and 0.5 mm or less. The length of the light guide 1220 is 1.0 m or more and 1.5 m or less. When the length of the light guide portion 1220 is 1.0 m or less, the optical uniformity of the laser light output after scattering from the inside of the light guide portion 1220 is reduced, resulting in uneven temperature distribution in the irradiation area of the adherend P. On the other hand, when the length of the light guide 1220 is 1.5 m or more, the optical uniformity of the laser is excellent, but the overall length of the light homogenization module is increased, resulting in an increase in manufacturing costs and inconvenient storage and transfer Light homogenization module.
就導光部1220而言，使用具有高穿透率的母材作為使雷射穿透的介質、以剖面為四方形的正六面體的方式形成，在與雷射穿透的光軸水平的側面形成全反射塗敷膜，在與該光軸垂直的上部面和下部面形成無反射塗敷膜。由此，可防止穿透導光部1220的雷射光束向外部損失。 For the light guide portion 1220, a base material having a high transmittance is used as a medium for penetrating the laser, and is formed in a regular hexahedron with a square cross section, at a level that is parallel to the optical axis through which the laser penetrates A total reflection coating film is formed on the side surface, and a non-reflection coating film is formed on the upper surface and the lower surface perpendicular to the optical axis. This can prevent the laser beam penetrating the light guide 1220 from being lost to the outside.
多個透鏡模組1230安裝於鏡筒，且可包括：聚光透鏡1231，用於對從該導光部1220射出的雷射進行聚光；準直透鏡1232，用於將穿透該聚光透鏡1231的雷射準直成平行光；以及聚 焦透鏡1233，用於調整由該準直透鏡1232準直的雷射的焦點。 A plurality of lens modules 1230 is mounted on the lens barrel, and may include: a condenser lens 1231 for condensing the laser beam emitted from the light guide portion 1220; a collimating lens 1232 for condensing the penetrating light The laser of the lens 1231 is collimated into parallel light; and a focusing lens 1233 is used to adjust the focus of the laser collimated by the collimating lens 1232.
在吸附頭130中，在上部安裝有透明窗，在下部安裝有吸附模組，側面可包括：頭架，用於形成貫通內部空間與外部的貫通孔；固定架，用於固定安裝於頭架的透明窗和吸附模組；吸附模組，藉由形成突出形成於底部面的吸附面和從內部空間貫通至吸附面的吸入孔來吸附晶片；以及吸附頭驅動部，根據晶片對齊控制信號以旋轉吸附頭130。 In the adsorption head 130, a transparent window is installed on the upper part, and an adsorption module is installed on the lower part. The side may include: a head frame for forming a through hole penetrating the internal space and the outside; a fixing frame for fixing and mounting on the head frame The transparent window and the suction module; the suction module sucks the wafer by forming a suction surface protruding from the bottom surface and a suction hole penetrating from the internal space to the suction surface; and the suction head drive unit according to the wafer alignment control signal to Rotate the suction head 130.
透明窗和吸附模組的材質可由石英(quartz)、藍寶石實現。與由石英實現的吸附模組相比，由藍寶石實現的吸附模組的穿透率相對低，但研究發現，即使長時間使用，也能具有比石英更優秀的耐久性。吸附頭130的吸附模組的底部面可形成發射塗敷層。反射塗敷層可用於調整雷射的穿透量。 The material of the transparent window and the adsorption module can be realized by quartz and sapphire. Compared with the adsorption module realized by quartz, the penetration rate of the adsorption module realized by sapphire is relatively low, but studies have found that even if used for a long time, it can have better durability than quartz. The bottom surface of the suction module of the suction head 130 may form an emission coating layer. The reflective coating can be used to adjust the amount of laser penetration.
基座140可由用於支撐且固定借助被附著物移送模組115移送的被附著物P的固定部(例如，真空吸盤)，和按照基座位置調整控制信號以移動基座的2軸驅動部或5軸驅動部等的機構構成。 The base 140 may include a fixing part (for example, a vacuum chuck) for supporting and fixing the adherend P transferred by the adherend transfer module 115, and a 2-axis drive part for adjusting the control signal according to the base position to move the base Or a 5-axis drive unit and other mechanisms.
視覺模組150可包括：圖像拍攝模組，用於產生吸附於吸附模組的吸附面的晶片的C圖像和安裝於基座140的被附著物P的圖像；以及模組移送部，將圖像拍攝模組移動至吸附頭130與基座140之間。 The vision module 150 may include: an image capturing module for generating a C image of a wafer adsorbed on the suction surface of the suction module and an image of an attached object P mounted on the base 140; and a module transfer section , Move the image capturing module between the suction head 130 and the base 140.
驅動模組160用於控制晶片供給裝置105、晶片轉移模組110、被附著物移送模組115、光均勻化模組120、吸附頭130、基座140、視覺模組150、雷射產生器170以及真空產生器180的工作。 The driving module 160 is used to control the wafer supply device 105, the wafer transfer module 110, the attachment transfer module 115, the light homogenization module 120, the suction head 130, the base 140, the vision module 150, and the laser generator 170 and the operation of the vacuum generator 180.
作為一例，驅動模組160可包括排列位置控制部，該排列位置控制部利用從視覺模組150產生的、吸附於吸附模組的吸附面的晶片C的圖像和被附著物P的圖像，向吸附頭130的吸附頭驅動部和基座的驅動部輸出晶片對齊控制信號和基座位置控制信號。 As an example, the drive module 160 may include an arrangement position control unit that uses the image of the wafer C and the image of the attached object P generated from the vision module 150 and adsorbed on the suction surface of the suction module , The wafer alignment control signal and the pedestal position control signal are output to the suction head driving portion of the suction head 130 and the pedestal driving portion.
驅動模組160可包括：光均勻化模組120；用於驅動吸附頭130的機構，例如氣缸驅動部；以及安裝控制部，用於控制氣缸驅動部，以使吸附於吸附頭130的晶片C安裝於被附著物P。 The driving module 160 may include: a light homogenizing module 120; a mechanism for driving the suction head 130, such as a cylinder driving part; and an installation control part for controlling the cylinder driving part so that the wafer C adsorbed on the suction head 130 Attached to the attachment P.
驅動模組160可包括：鏡筒驅動部，使該多個透鏡模組1230單獨進行上升或下降，以調整面光源的照射區域的範圍和加熱溫度；以及光均勻化模組控制部，用於控制鏡筒驅動部。 The driving module 160 may include: a lens barrel driving part, which individually raises or lowers the plurality of lens modules 1230 to adjust the range and heating temperature of the irradiation area of the surface light source; and a light homogenization module control part for Control the lens barrel driver.
如圖4所示，多個透鏡模組1230還可包括：第一圓柱透鏡1234，用於調整穿透該聚焦透鏡1233的雷射的第一軸方向長度；以及第二圓柱透鏡1235，用於調整穿透該第一圓柱透鏡1234的雷射的第二軸方向長度，該第一軸方向長度與第二軸方向長度相互正交。 As shown in FIG. 4, the plurality of lens modules 1230 may further include: a first cylindrical lens 1234 for adjusting the length of the laser beam passing through the focusing lens 1233 in the first axis direction; and a second cylindrical lens 1235 for The length of the laser beam penetrating the first cylindrical lens 1234 in the second axis direction is adjusted, and the length in the first axis direction and the length in the second axis direction are orthogonal to each other.
圖5為示出本發明一實施例的穿透第一圓柱透鏡的雷射的照射區域的例示圖。圖6為示出本發明一實施例的穿透第二圓柱透鏡的雷射的照射區域的例示圖。 FIG. 5 is an illustration showing an irradiation area of a laser penetrating a first cylindrical lens according to an embodiment of the invention. 6 is an illustration showing an irradiation area of a laser penetrating through a second cylindrical lens according to an embodiment of the invention.
在圖5中，第一圓柱透鏡1234可調整穿透聚光透鏡121的雷射的第一軸方向長度。參照圖5，第一圓柱透鏡1234在立起圓柱的狀態下，呈向縱軸剖切的形狀，第一圓柱透鏡1234設置於聚光透鏡121的下部，且第一圓柱透鏡1234的凸出的面可以朝向上側的方式配置。穿透第一圓柱透鏡1234的雷射的照射區域可 由縮減第一軸方向長度的方式設置。作為一例，由於照射區域的第一軸方向長度縮減，因而穿透第一圓柱透鏡1234的雷射的照射區域可從第一照射區域A1轉換為第二照射區域A2。 In FIG. 5, the first cylindrical lens 1234 can adjust the length of the laser beam penetrating the condenser lens 121 in the first axis direction. Referring to FIG. 5, the first cylindrical lens 1234 is in a shape cut along the longitudinal axis in the state of standing up. The first cylindrical lens 1234 is disposed at the lower portion of the condenser lens 121, and the convex of the first cylindrical lens 1234 is convex. The surface can be arranged so as to face upward. The irradiation area of the laser penetrating the first cylindrical lens 1234 can be set by reducing the length in the first axis direction. As an example, since the length of the irradiation area in the first axis direction is reduced, the irradiation area of the laser penetrating the first cylindrical lens 1234 can be converted from the first irradiation area A1 to the second irradiation area A2.
在圖6中，第二圓柱透鏡1235可調整穿透第一圓柱透鏡1234的雷射的第二軸方向長度。此時，第二軸方向長度與第一軸方向長度相互正交。參照圖6，第二圓柱透鏡1235與第一圓柱透鏡1234呈相同的形狀。第二圓柱透鏡1235設置於第一圓柱透鏡1234的下部，凸出的面以朝向上側的方式配置，並且其方向可以與第一圓柱透鏡1234正交的方式配置。像這樣穿透第二圓柱透鏡1235的雷射的照射區域可由縮減第二軸方向長度的方式設置。作為一例，由於照射區域的第二軸方向長度縮減，因而穿透第二圓柱透鏡1235的雷射的照射區域可從第二照射區域A2轉換為第三照射區域A3。 In FIG. 6, the second cylindrical lens 1235 can adjust the length of the laser beam passing through the first cylindrical lens 1234 in the second axis direction. At this time, the length in the second axis direction and the length in the first axis direction are orthogonal to each other. 6, the second cylindrical lens 1235 and the first cylindrical lens 1234 have the same shape. The second cylindrical lens 1235 is provided at the lower portion of the first cylindrical lens 1234, the convex surface is arranged to face upward, and its direction can be arranged to be orthogonal to the first cylindrical lens 1234. The irradiation area of the laser light penetrating the second cylindrical lens 1235 in this way can be set by reducing the length in the second axis direction. As an example, since the length of the irradiation area in the second axis direction is reduced, the irradiation area of the laser penetrating the second cylindrical lens 1235 can be converted from the second irradiation area A2 to the third irradiation area A3.
第一圓柱透鏡1234及第二圓柱透鏡1235可容易地調整雷射的照射區域的形狀。此時，第一圓柱透鏡1234及第二圓柱透鏡1235不侷限於一實施例，只要是能夠容易地調整雷射的照射區域的第一軸方向長度及第二軸方向長度的結構，均可包括在一實施例中。作為一例，第一圓柱透鏡1234及第二圓柱透鏡1235可以凸出的面朝向下部的方式配置，上部面凹面的透鏡可配置於第一圓柱透鏡1234及第二圓柱透鏡1235的位置。 The first cylindrical lens 1234 and the second cylindrical lens 1235 can easily adjust the shape of the laser irradiation area. At this time, the first cylindrical lens 1234 and the second cylindrical lens 1235 are not limited to one embodiment, and any structure that can easily adjust the length in the first axis direction and the length in the second axis direction of the laser irradiation area may include In an embodiment. As an example, the first cylindrical lens 1234 and the second cylindrical lens 1235 may be arranged such that the convex surface faces downward, and the lens with the upper concave surface may be arranged at the position of the first cylindrical lens 1234 and the second cylindrical lens 1235.
在這種情況下，可藉由調整雷射的照射區域來使第一軸方向長度和第二軸方向長度拉長。即，只要是第一圓柱透鏡1234及第二圓柱透鏡1235可藉由調整雷射的照射區域的第一軸方向長度和第二軸方向長度，來調整照射區域的橫向及縱向的長度比例， 則均可包括在一實施例。 In this case, the length in the first axis direction and the length in the second axis direction can be elongated by adjusting the irradiation area of the laser. That is, as long as the first cylindrical lens 1234 and the second cylindrical lens 1235 can adjust the length of the laser irradiation area in the first axis direction and the length of the second axis to adjust the length ratio of the irradiation area in the horizontal and vertical directions, then Both can be included in an embodiment.
並且，第一圓柱透鏡1234與第二圓柱透鏡1235可相互置換位置。即，穿透凸透鏡121的雷射相比第一圓柱透鏡1234先穿透第二圓柱透鏡1235，因而也可在調整照射區域的第二軸方向長度後，調整第一軸方向長度。 In addition, the first cylindrical lens 1234 and the second cylindrical lens 1235 can exchange positions with each other. That is, the laser light penetrating the convex lens 121 penetrates the second cylindrical lens 1235 before the first cylindrical lens 1234, so the length in the first axis direction can also be adjusted after adjusting the length in the second axis direction of the irradiation area.
圖7為示出本發明一實施例的光均勻化模組的雷射的照射區域的例示圖。在基板10可安裝電子組件裝置11、積體電路裝置12等的半導體裝置。本發明的光均勻化模組120可容易地調整照射區域的形狀及寬度，以使雷射僅照射附著於基板10的電子組件裝置11。 FIG. 7 is an illustration showing the laser irradiation area of the light homogenization module according to an embodiment of the invention. A semiconductor device such as an electronic component device 11 and an integrated circuit device 12 can be mounted on the substrate 10. The light homogenization module 120 of the present invention can easily adjust the shape and width of the irradiation area so that the laser light illuminates only the electronic component device 11 attached to the substrate 10.
作為一例，參照圖7，第三照射區域A3可調整為僅包括電子組件裝置11。因此，在積體電路裝置12附著於基板10的狀態下，即使實施雷射熱壓程序，光均勻化模組120也可防止向積體電路裝置12施加熱衝擊。並且，在基板10安置電子組件裝置11，且實施雷射熱壓程序後，附著積體電路裝置12的情況下，光均勻化模組120可使雷射無法照射用於附著積體電路裝置12的位置，因此可容易地附著積體電路裝置12。 As an example, referring to FIG. 7, the third irradiation area A3 may be adjusted to include only the electronic component device 11. Therefore, in the state where the integrated circuit device 12 is attached to the substrate 10, even if the laser thermal pressing process is performed, the light homogenization module 120 can prevent the thermal shock from being applied to the integrated circuit device 12. In addition, after the electronic component device 11 is placed on the substrate 10 and the laser thermal pressing process is performed, the integrated circuit device 12 is attached, and the light homogenization module 120 can prevent the laser from irradiating the attached integrated circuit device 12 Position, the integrated circuit device 12 can be easily attached.
例如，光均勻化模組120可在一個基板10上安裝電子組件裝置11和積體電路裝置12的狀態下實施雷射熱壓程序，也可在基板上僅安裝電子組件裝置11的狀態下，實施雷射熱壓程序後，在基板10附著積體電路裝置12。在雷射熱壓程序中適用光均勻化模組100的情況下，為了將電子組件裝置11附著於基板10，需要1秒至2秒左右的時間。即，在使用本發明的雷射熱壓焊接裝置100的情況下，由於雷射熱壓程序的整體時間被縮短，可實現迅 速生產半導體封裝體。 For example, the light homogenization module 120 may implement the laser hot pressing process in a state where the electronic component device 11 and the integrated circuit device 12 are mounted on one substrate 10, or may only be mounted on the substrate, After the laser hot pressing procedure is performed, the integrated circuit device 12 is attached to the substrate 10. When the light homogenization module 100 is applied to the laser thermal compression process, it takes about 1 second to 2 seconds to attach the electronic component device 11 to the substrate 10. That is, in the case of using the laser thermal compression bonding apparatus 100 of the present invention, since the overall time of the laser thermal compression process is shortened, rapid production of semiconductor packages can be realized.
並且，如前所述，光均勻化模組120可藉由使穿透光纖維110的雷射的能源均勻，來在照射區域內使雷射的能源均勻。因此，位於照射區域內的電子組件裝置11可均勻附著於基板10。光均勻化模組120使照射區域外的能源非常小，因此可防止位於照射區域外的積體電路裝置12產生熱衝擊。光均勻化模組120可以在一個基板10上附著電子組件裝置11及積體電路裝置12的方式形成，因此可減少作為半成品的半導體封裝體的整體集成，且因降低成本而經濟實惠。 Moreover, as described above, the light homogenization module 120 can make the energy of the laser uniform in the irradiation area by making the energy of the laser penetrating through the optical fiber 110 uniform. Therefore, the electronic component device 11 located in the irradiation area can be uniformly attached to the substrate 10. The light homogenization module 120 makes the energy outside the irradiation area very small, and thus can prevent the integrated circuit device 12 located outside the irradiation area from generating thermal shock. The light homogenization module 120 can be formed by attaching the electronic component device 11 and the integrated circuit device 12 on one substrate 10, so that the overall integration of the semiconductor package as a semi-finished product can be reduced, and it is economical by reducing the cost.
以上，雖然參照附圖中所示的實施例來說明瞭本發明，以使本發明所屬技術領域的普通技術人員可容易地理解且再現本發明，但這僅為例示，只要是本發明所屬技術領域的普通技術人員，就可以理解可對本發明進行多種變形及藉由等同的其他的實施例來實施本發明。因此，應理解為以上所描述的實施例在所有方面上僅用於舉例，而不用於限定本發明。例如，能夠以分散的方式實施以單一形式說明的各結構要素，同樣也能夠以結合的形式實施以分散的方式說明的結構要素。因此，本發明真正的技術保護範圍應藉由所記載的發明要求保護範圍來定義。 In the above, although the present invention has been described with reference to the embodiments shown in the drawings so that those of ordinary skill in the technical field to which the present invention belongs can easily understand and reproduce the present invention, this is merely an example as long as it is the technology to which the present invention belongs Those of ordinary skill in the art can understand that the present invention can be modified in various ways and implemented by equivalent other embodiments. Therefore, it should be understood that the above-described embodiments are only used as examples in all aspects and are not intended to limit the present invention. For example, each structural element described in a single form can be implemented in a decentralized manner, and structural elements described in a decentralized manner can also be implemented in a combined form. Therefore, the true technical protection scope of the present invention should be defined by the claimed protection scope of the invention.
如前所述，以發明的最佳具體實施方式說明發明的具體實施方式。 As described above, the specific embodiments of the invention will be described in the best embodiments of the invention.
本說明書的技術可利用於雷射回流裝置。 The technology in this manual can be used in laser reflow devices.
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| TWI806524B (en) * | 2022-03-28 | 2023-06-21 | 東捷科技股份有限公司 | Soldering equipment for electronic devices |
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| TWI693119B (en) * | 2019-03-06 | 2020-05-11 | 台灣愛司帝科技股份有限公司 | Laser heating device for fixing led |
| TWI806524B (en) * | 2022-03-28 | 2023-06-21 | 東捷科技股份有限公司 | Soldering equipment for electronic devices |
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