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JP5126711B2 - Bonding equipment - Google Patents

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JP5126711B2
JP5126711B2 JP2007235502A JP2007235502A JP5126711B2 JP 5126711 B2 JP5126711 B2 JP 5126711B2 JP 2007235502 A JP2007235502 A JP 2007235502A JP 2007235502 A JP2007235502 A JP 2007235502A JP 5126711 B2 JP5126711 B2 JP 5126711B2
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bonding
laser
laser beam
semiconductor chip
substrate
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JP2009070906A (en
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透 寺田
栄次 田中
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Shibuya Corp
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Shibuya Corp
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Priority to JP2007235502A priority Critical patent/JP5126711B2/en
Priority to US12/207,128 priority patent/US8168920B2/en
Priority to KR1020080089885A priority patent/KR101475953B1/en
Priority to TW097134814A priority patent/TWI403378B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75261—Laser
    • H01L2224/75263—Laser in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Description

本発明は、ボンディング装置の改良に関するもので、詳しくは、電子部品にボンディングヘッドの内側からレーザ光を照射することにより加熱して接合するボンディング装置の改良に関するものである。   The present invention relates to an improvement of a bonding apparatus, and more particularly to an improvement of a bonding apparatus that heats and bonds electronic components by irradiating a laser beam from the inside of a bonding head.

従来より、電子部品にボンディングヘッドの内側からレーザ光を照射することにより加熱して接合するボンディング装置として、次の２つの種類が知られている。第１の方式は、特許文献１に記載されているように、電子部品を吸着保持しているボンディングツールにレーザ光を照射し、ボンディングツールを介して電子部品を加熱する方式である。第２の方式は、特許文献２に示されるように、ボンディングツールをレーザ光が透過可能なものとして電子部品に対し直接レーザ光を照射し、電子部品を加熱する方式である。   2. Description of the Related Art Conventionally, the following two types are known as bonding apparatuses that heat and bond electronic components by irradiating laser beams from the inside of a bonding head. As described in Patent Document 1, the first method is a method of irradiating a bonding tool holding an electronic component with a laser beam and heating the electronic component through the bonding tool. The second method is a method of heating the electronic component by directly irradiating the electronic component with the laser beam by making the bonding tool capable of transmitting the laser beam as disclosed in Patent Document 2.

ボンディングツールを介して電子部品を加熱する第１の方式は、ボンディングツールの冷却手段が必要であったり、ボンディングツールからの輻射熱により電子部品がボンディングされる基板などが加熱される危険があったり、加熱時間が直接加熱と比較して長いというデメリットがあった。他方、直接電子部品にレーザ光を照射して加熱する第２の方式では、加熱時間が短くて済む上、レーザ光の照射を停止することにより電子部品は急速に冷却されるので特別な冷却手段を必要としないというメリットを有していた。   The first method of heating electronic components via the bonding tool requires a cooling means for the bonding tool, or there is a risk that the substrate on which the electronic component is bonded is heated by radiant heat from the bonding tool, There was a demerit that the heating time was longer than direct heating. On the other hand, in the second method of directly irradiating and heating the electronic component with the laser beam, the heating time can be shortened and the electronic component is rapidly cooled by stopping the irradiation of the laser beam. Has the advantage of not requiring.

図３は、上記第２の方式での加熱原理を示す断面説明図であり、図示されるように光源となるレーザ発振器１４と接続された光ファイバ９を通ってきたレーザ光２０は、光ファイバから出射すると拡散するので、直接電子部品たる半導体チップ１にレーザ光２０を照射して加熱する第２の方式でも、出射したレーザ光２０を光路上に設けた集光レンズ１１にて透過集束し、照射領域が半導体チップ１の大きさにほぼ一致するようにして、エネルギを効率よく加熱に使われるようにしていた。   FIG. 3 is a cross-sectional explanatory view showing the heating principle in the second method. As shown in the figure, the laser light 20 that has passed through the optical fiber 9 connected to the laser oscillator 14 serving as the light source is shown in FIG. Therefore, even in the second method in which the semiconductor chip 1 which is an electronic component is directly irradiated with the laser beam 20 and heated, the emitted laser beam 20 is transmitted and focused by the condenser lens 11 provided on the optical path. The energy is efficiently used for heating so that the irradiation area substantially matches the size of the semiconductor chip 1.

しかし、ボンディング装置では、組立調整時などにボンディングツールが電子部品を吸着保持していない状態でレーザ光２０を発振する場合があるが、レーザ光２０の集光点１２（光径が最も小さくなる点）は非常に強力なエネルギを有する点となるため、誤って集光点１２やその近傍に載置ステージや基板等があると、それらを損傷破壊してしまうという危険があった。   However, in the bonding apparatus, there is a case where the laser beam 20 is oscillated in a state where the bonding tool does not suck and hold the electronic component at the time of assembly adjustment or the like, but the condensing point 12 of the laser beam 20 (the light diameter is the smallest). Point) has a very strong energy, and if there is a mounting stage or a substrate in the vicinity of the condensing point 12 or its vicinity, there is a risk of damaging or destroying them.

更に、ボンディング装置での生産時でも、半導体チップ１の材料として多いシリコンはレーザ光２０たる赤外光を良く吸収するが、吸収率は約６〜７割であって、残りのレーザ光２０は半導体チップ１を透過するため、半導体チップ１を透過したレーザ光２０は基板等に照射されることになり、半導体チップ１を透過して弱くなったといえども、集光点１２では基板を損傷したり、加熱させたりするエネルギを有していることもある。その上、基板が加熱され膨張した状態でボンディングするとバンプと電極の位置がずれてボンディングされた製品が不良品になることがあった。   Further, even during production in the bonding apparatus, silicon, which is a large amount of material for the semiconductor chip 1, absorbs infrared light as the laser beam 20 well, but the absorption rate is about 60 to 70%, and the remaining laser beam 20 is Since the laser beam 20 that has passed through the semiconductor chip 1 is irradiated to the substrate and the like because it passes through the semiconductor chip 1, the substrate 12 is damaged at the condensing point 12 even though it is weakened through the semiconductor chip 1. Or have energy to heat. In addition, when bonding is performed in a state where the substrate is heated and expanded, the positions of the bumps and the electrodes are displaced, and the bonded product may be defective.

特許第３３６８４９４号特許公報Japanese Patent No. 3368494 特許第３１９５９７０号特許公報Japanese Patent No. 3195970

本発明は、集光手段によるレーザ光の集光点をボンディングヘッド内部の負圧を付与される空部に設定することにより、ボンディングツールが電子部品を吸着保持していない状態でレーザ光が発振された場合や、電子部品を透過したレーザ光によりステージや基板などが照射された場合でも、ステージや基板などに損傷や加熱膨張を起こさせる危険のないボンディング装置を提供することを目的とする。

In the present invention, the laser beam oscillates in a state where the bonding tool does not hold the electronic component by suction by setting the condensing point of the laser beam by the condensing means to the empty portion to which the negative pressure is applied inside the bonding head. It is an object of the present invention to provide a bonding apparatus in which there is no risk of causing damage or heating expansion to a stage or a substrate even when the stage or the substrate is irradiated with a laser beam transmitted through an electronic component.

第１の発明は、上記課題を解決するため、電子部品を吸着保持するボンディングツールを有するボンディングヘッドと、ボンディングツールに保持された電子部品にボンディングヘッドの内側からレーザ光を照射して加熱するレーザ加熱手段とを備えたボンディング装置に次の手段を採用する。
第１に、レーザ加熱手段は、光源からのレーザ光を集束する集光手段を有するものとする。
第２に、集光手段によるレーザ光の集光点をボンディングヘッド内部の負圧を付与される空部に設ける。
In order to solve the above-mentioned problems, a first invention includes a bonding head having a bonding tool that holds electronic components by suction, and a laser that irradiates and heats the electronic components held by the bonding tool from the inside of the bonding head. The following means is adopted for a bonding apparatus provided with a heating means.
First, it is assumed that the laser heating unit has a condensing unit that focuses the laser beam from the light source.
Secondly, the condensing point of the laser beam by the condensing means is provided in the empty portion to which a negative pressure is applied inside the bonding head.

本発明は、集光手段によるレーザ光の集光点をボンディングヘッド内部の負圧を付与される空部に設けることにより、組立調整時のレーザ発振や半導体チップの透過光があっても、基板や載置ステージに損傷や加熱膨張を起こさせる危険のないボンディング装置となった。
In the present invention, a laser beam condensing point by a condensing means is provided in a hollow portion to which a negative pressure is applied inside the bonding head, so that even if there is laser oscillation during assembly adjustment or transmitted light of a semiconductor chip, the substrate And the bonding device has no danger of causing damage or heating expansion to the mounting stage.

以下、図面に従って、実施例と共に本発明の実施の形態について説明する。実施例におけるボンディング装置は、電子部品である半導体チップ１を基板２にボンディングする装置である。尚、図１中符号１３は、半導体チップ１を載置固定し、位置合わせのため移動可能とされた載置ステージ１３である。   Hereinafter, embodiments of the present invention will be described together with examples according to the drawings. The bonding apparatus in the embodiment is an apparatus for bonding a semiconductor chip 1 as an electronic component to a substrate 2. Reference numeral 13 in FIG. 1 denotes a mounting stage 13 on which the semiconductor chip 1 is mounted and fixed and can be moved for alignment.

ボンディング装置は、半導体チップ１を吸着保持するボンディングツール３を先端部（下端部）に有するボンディングヘッド４を備えており、移動可能とされている。即ち、ボンディングヘッド４は、チップ供給位置でボンディングツール３に半導体チップ１を吸着保持し、ボンディング位置に移動して、下降して基板２に半導体チップ１を搭載し、加熱して接続し、冷却後固定してボンディングを完了し、上昇して、再度、チップ供給位置に戻る動作を繰り返す。   The bonding apparatus includes a bonding head 4 having a bonding tool 3 for sucking and holding the semiconductor chip 1 at the tip (lower end), and is movable. That is, the bonding head 4 sucks and holds the semiconductor chip 1 on the bonding tool 3 at the chip supply position, moves to the bonding position, descends, mounts the semiconductor chip 1 on the substrate 2, is connected by heating, and is cooled. Thereafter, the bonding is completed to complete the bonding, and the operation of raising and returning to the chip supply position is repeated.

ボンディングヘッド４の内部は、空部５とされ、該空部５には、ボンディングツール３に保持された半導体チップ１をボンディングヘッド４の内側からレーザ光を照射して加熱するレーザ加熱装置６が配置されている。該レーザ加熱装置６が本願発明の特徴となる。   The inside of the bonding head 4 is an empty portion 5, and a laser heating device 6 for heating the semiconductor chip 1 held by the bonding tool 3 by irradiating a laser beam from the inside of the bonding head 4 is provided in the empty portion 5. Has been placed. The laser heating device 6 is a feature of the present invention.

ボンディングヘッド４の下端部にはボンディングツール３が装着されている。ボンディングツール３は、実施例では熱膨張が小さく、レーザ光２０の透過性の良い石英ガラスが用いられているが、レーザ光２０を透過する素材であれば良い。ボンディングツール３の中央部には、半導体チップ１を吸着保持するための吸着孔１９が形成されている。更に、ボンディングツール３のボンディングヘッド４内部側に位置する表面（図１中では上面）には、反射防止膜が形成されている。   A bonding tool 3 is attached to the lower end of the bonding head 4. In the embodiment, the bonding tool 3 is made of quartz glass that has a small thermal expansion and has a high transmittance of the laser beam 20, but any material that transmits the laser beam 20 may be used. A suction hole 19 for sucking and holding the semiconductor chip 1 is formed at the center of the bonding tool 3. Further, an antireflection film is formed on the surface (upper surface in FIG. 1) located on the inner side of the bonding head 4 of the bonding tool 3.

ボンディングヘッド４には、吸引通路７が形成されており、空部５は、該吸引通路７とボンディングヘッド４の下端に装着されたボンディングツール３の吸着孔１９以外は、密閉されている。更に、吸引通路７は、吸引装置８と接続されているため、吸引装置８により真空吸引することにより、ボンディングヘッド４内の空部５は負圧を付与され、ボンディングツール３の吸着孔１９に半導体チップ１を吸着保持可能となる。   A suction passage 7 is formed in the bonding head 4, and the empty portion 5 is sealed except for the suction passage 7 and the suction hole 19 of the bonding tool 3 attached to the lower end of the bonding head 4. Further, since the suction passage 7 is connected to the suction device 8, the vacuum portion 5 in the bonding head 4 is given a negative pressure by vacuum suction by the suction device 8, and the suction hole 19 of the bonding tool 3 is applied to the suction hole 19. The semiconductor chip 1 can be sucked and held.

レーザ加熱装置６は、光源となるレーザ発振器１４と、レーザ発振器１４と接続されておりボンディングヘッド４内にレーザ出射口１０を位置させた光ファイバ９と、該出射口１０から出射されたのレーザ光２０を集束する集光手段たる集光レンズ１１と、レーザ光２０の照射範囲を限定するための遮蔽板１５を有する。尚、光ファイバ９から出射されたレーザ光２０は、拡散して集光レンズ１１に入射するため、レーザ光２０の集光点１２は、集光レンズ１１の焦点位置より下方に設けられている。   The laser heating device 6 includes a laser oscillator 14 serving as a light source, an optical fiber 9 connected to the laser oscillator 14 and having the laser emission port 10 positioned in the bonding head 4, and a laser emitted from the emission port 10. It has the condensing lens 11 which is a condensing means which condenses the light 20, and the shielding board 15 for limiting the irradiation range of the laser beam 20. FIG. Since the laser light 20 emitted from the optical fiber 9 is diffused and enters the condenser lens 11, the condensing point 12 of the laser light 20 is provided below the focal position of the condenser lens 11. .

レーザ発振器１４は、レーザ光２０を連続して発振する。実施例でのレーザ発振器１４は、ボンディングヘッド４とは別体で装備されているが、一体的に設けたものであっても良い。光ファイバ９のレーザ出射口１０は、図１の実施例では、ボンディングツール３に対向して下向きに設置されている。勿論、図２に示すように反射鏡１７を設けることにより、向きを限定されることのないものとなる。   The laser oscillator 14 oscillates the laser beam 20 continuously. The laser oscillator 14 in the embodiment is provided separately from the bonding head 4, but may be provided integrally. In the embodiment of FIG. 1, the laser emission port 10 of the optical fiber 9 is installed facing downward to the bonding tool 3. Of course, by providing the reflecting mirror 17 as shown in FIG. 2, the direction is not limited.

集光レンズ１１は、図１の実施例では１枚の凸レンズを用いているが、図２で２枚用いるように複数枚のレンズを用いても良い。集光レンズ１１は、ボンディングヘッド４内のホルダ１６に支持されている。集光レンズ１１によるレーザ光の集光点１２は、ボンディングヘッド４の内部である空部５内に設けている。尚、集光レンズ１１の表裏面は反射防止膜が形成されている。また、集光手段として、凹面鏡を使用しても良い。   The condensing lens 11 uses a single convex lens in the embodiment of FIG. 1, but a plurality of lenses may be used as in FIG. The condenser lens 11 is supported by a holder 16 in the bonding head 4. A condensing point 12 of the laser beam by the condensing lens 11 is provided in the empty portion 5 inside the bonding head 4. An antireflection film is formed on the front and back surfaces of the condenser lens 11. Moreover, you may use a concave mirror as a condensing means.

遮蔽板１５は、集光レンズ１１を通過したレーザ光２０が、照射されるべき半導体チップ１からはみ出さないようするためのものである。遮蔽板１５は、図１に示す第１実施例では存在するが、図２に示されるように集光レンズ１１のみで照射範囲が半導体チップ１に限定する調整が可能な場合は設けなくとも良い。   The shielding plate 15 is for preventing the laser light 20 that has passed through the condenser lens 11 from protruding from the semiconductor chip 1 to be irradiated. Although the shielding plate 15 exists in the first embodiment shown in FIG. 1, it is not necessary to provide the shielding plate 15 when the irradiation range can be adjusted only by the condenser lens 11 as shown in FIG. 2. .

レーザ光２０が、半導体チップ１からはみ出していると基板２に照射されて基板２が加熱されて、膨張する危険を有している。基板２が樹脂からなるような場合にはシリコンからなる基板２に比べて大きく膨張してしまう。基板２が加熱され膨張した状態でボンディングするとバンプと電極の位置がずれる上、冷却して元に戻った場合でも半導体チップ１が曲がったりして、不良品になることがあった。遮蔽板１５はこの危険を回避するために設けられている。   If the laser beam 20 protrudes from the semiconductor chip 1, there is a risk that the substrate 2 is irradiated and heated to expand the substrate 2. When the substrate 2 is made of a resin, the substrate 2 is greatly expanded as compared with the substrate 2 made of silicon. When bonding is performed in a state where the substrate 2 is heated and expanded, the positions of the bumps and the electrodes are shifted, and even when the substrate 2 is cooled and returned to the original state, the semiconductor chip 1 may bend and become defective. The shielding plate 15 is provided to avoid this danger.

尚、ボンディングヘッド４内のボンディングツール３の斜め上方には、ボンディングツール３に吸着された半導体チップ１に照射されたレーザ光２０の反射光を検出するための反射光検出器１８を設けている。反射光検出器１８は、ボンディングヘッド４が、チップ供給位置とボンディング位置との間で往復移動することから、光ファイバ９が繰り返し、しごかれ断線することがあるので、そのような事態を検出しようとするために設けられたものである。   A reflected light detector 18 for detecting the reflected light of the laser beam 20 irradiated on the semiconductor chip 1 attracted to the bonding tool 3 is provided obliquely above the bonding tool 3 in the bonding head 4. . The reflected light detector 18 detects such a situation because the bonding head 4 reciprocates between the chip supply position and the bonding position, so that the optical fiber 9 may be repeatedly broken. It is provided to try.

以下、ボンディングの動作について説明すると、先ず、ボンディング位置では、載置ステージ１３上に基板２が供給される。他方、チップ供給位置では、ボンディングヘッド４が半導体チップ１をボンディングツール３に吸着保持する。その後、ボンディングヘッド４は、ボンディング位置に移動し、下降し、荷重制御をしながら、レーザ光２０を半導体チップ１に向かって照射し、半導体チップ１を加圧加熱してボンディングする。レーザ光２０の照射をＯＦＦにすると冷却され、半導体チップ１は、基板２に固着される。その後、ボンディングヘッド４は、上昇し、次のボンディング動作を繰り返すことになる。   Hereinafter, the bonding operation will be described. First, the substrate 2 is supplied onto the mounting stage 13 at the bonding position. On the other hand, at the chip supply position, the bonding head 4 sucks and holds the semiconductor chip 1 on the bonding tool 3. Thereafter, the bonding head 4 moves to the bonding position, descends, and irradiates the semiconductor chip 1 with the laser beam 20 while controlling the load, and pressurizes and heats the semiconductor chip 1 for bonding. When the irradiation of the laser beam 20 is turned off, the semiconductor chip 1 is cooled and the semiconductor chip 1 is fixed to the substrate 2. Thereafter, the bonding head 4 moves up and repeats the next bonding operation.

１実施例に係るボンディング装置の概要を示す断面説明図Cross-sectional explanatory drawing which shows the outline | summary of the bonding apparatus which concerns on 1 Example. 他実施例に係るボンディングヘッドを示す断面説明図Sectional explanatory drawing which shows the bonding head which concerns on another Example. 従来のボンディング装置における加熱原理を示す断面説明図Cross-sectional explanatory drawing showing the heating principle in conventional bonding equipment

符号の説明Explanation of symbols

１．．．．．．半導体チップ
２．．．．．．基板
３．．．．．．ボンディングツール
４．．．．．．ボンディングヘッド
５．．．．．．空部
６．．．．．．レーザ加熱装置
７．．．．．．吸引通路
８．．．．．．吸引装置
９．．．．．．光ファイバ
１０．．．．．レーザ出射口
１１．．．．．集光レンズ
１２．．．．．集光点
１３．．．．．載置ステージ
１４．．．．．レーザ発振器
１５．．．．．遮蔽板
１６．．．．．ホルダ
１７．．．．．反射鏡
１８．．．．．反射検出器
１９．．．．．吸着孔
２０．．．．．レーザ光 1. . . . . . Semiconductor chip . . . . . Substrate 3. . . . . . Bonding tool 4. . . . . . 4. Bonding head . . . . . Empty part 6. . . . . . 6. Laser heating device . . . . . Suction passage 8. . . . . . 8. Suction device . . . . . Optical fiber 10. . . . . Laser exit 11. . . . . Condensing lens 12. . . . . Condensing point 13. . . . . Placement stage 14. . . . . Laser oscillator 15. . . . . Shield plate 16. . . . . Holder 17. . . . . Reflector 18. . . . . Reflection detector 19. . . . . Adsorption hole 20. . . . . Laser light

Claims (1)

電子部品を吸着保持するボンディングツールを有するボンディングヘッドと、
ボンディングツールに保持された電子部品にボンディングヘッドの内側からレーザ光を照射して加熱するレーザ加熱手段とを備えたボンディング装置において、
レーザ加熱手段は光源からのレーザ光を集束する集光手段を有し、
集光手段によるレーザ光の集光点をボンディングヘッド内部の負圧を付与される空部に設けたことを特徴とするボンディング装置。 A bonding head having a bonding tool for sucking and holding electronic components;
In a bonding apparatus comprising a laser heating means for irradiating and heating an electronic component held by a bonding tool from the inside of a bonding head,
The laser heating means has a condensing means for focusing the laser light from the light source,
A bonding apparatus characterized in that a condensing point of laser light by a condensing means is provided in an empty portion to which a negative pressure is applied inside a bonding head.
JP2007235502A 2007-09-11 2007-09-11 Bonding equipment Active JP5126711B2 (en)

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Application Number Priority Date Filing Date Title
JP2007235502A JP5126711B2 (en) 2007-09-11 2007-09-11 Bonding equipment
US12/207,128 US8168920B2 (en) 2007-09-11 2008-09-09 Bonding device
KR1020080089885A KR101475953B1 (en) 2007-09-11 2008-09-11 Bonding device
TW097134814A TWI403378B (en) 2007-09-11 2008-09-11 Bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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JP5126711B2 true JP5126711B2 (en) 2013-01-23

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JP6064388B2 (en) * 2012-06-28 2017-01-25 澁谷工業株式会社 Bonding head

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JPH0671135B2 (en) * 1989-01-26 1994-09-07 富士電機株式会社 IC chip soldering method
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