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TW201737326A - 保護膜被覆方法 - Google Patents

保護膜被覆方法 Download PDF

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Publication number
TW201737326A
TW201737326A TW105132906A TW105132906A TW201737326A TW 201737326 A TW201737326 A TW 201737326A TW 105132906 A TW105132906 A TW 105132906A TW 105132906 A TW105132906 A TW 105132906A TW 201737326 A TW201737326 A TW 201737326A
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Taiwan
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wafer
protective film
water
annular frame
soluble resin
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TW105132906A
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English (en)
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Taku Iwamoto
Hiroto Yoshida
Junichi Kuki
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Disco Corp
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Abstract

提供一種可以容易去除附著在介隔著保護條帶而支撐晶圓之環狀的框的上表面的液狀樹脂之保護膜被覆方法。一種用水溶性樹脂被覆保護膜到在表面形成有複數個裝置之晶圓的表面之保護膜被覆方法，係在保護膜被覆製程中，包含去除飛散到環狀的框的上表面的水溶性樹脂之水溶性樹脂去除製程。水溶性樹脂去除製程中，一邊旋轉旋轉床臺，一邊把洗淨噴嘴位置到被保持在旋轉床臺的環狀的框的上表面，把洗淨水供給到環狀的框的上表面，並且，把空氣噴嘴位置到鄰接該洗淨噴嘴並位在旋轉方向下游側，以與供給到環狀的框的上表面的洗淨水的移動相反那般供給空氣，一邊暫時性的使洗淨水滯留，一邊朝環狀的框的遠方排出洗淨水。

Description

保護膜被覆方法
本發明有關在半導體晶圓等的晶圓的表面披覆保護膜的保護膜被覆方法。
如所屬技術區域中具有通常知識者所公知的，在半導體裝置製造程序中，藉由在矽等的半導體基板的表面配列成格子狀的分割預定線，區劃出的複數個區域，在該已區劃的區域形成IC、LSI等的裝置。如此形成的半導體晶圓，係沿分割預定線切斷，製造出一個一個的裝置晶片。而且，藉由在藍寶石基板等的表面形成格子狀的分割預定線，區劃出複數個區域，在該已區劃的區域層積氮化鎵系化合物半導體等，形成光裝置之光裝置晶圓，係沿分割預定線被分割成一個一個的發光二極體、雷射二極體等的光裝置晶片，廣泛被利用在電器。
作為沿分割預定線分割這樣的半導體晶圓或光裝置晶圓等的晶圓的方法，提案有經由沿形成在晶圓的分割預定線照射脈衝雷射光線，形成雷射加工溝，沿該雷射加工溝藉由機械分斷裝置來割斷的方法。
雷射加工比起切削加工係加工速度可以快速，而且即便是利用藍寶石這類的硬度的高的原材料所做成的晶圓，也可以比較容易加工。但是，沿晶圓的分割預定線照射雷射光線的話，在被照射到的區域熱能集中，產生碎屑，該碎屑附著在裝置的表面，使裝置的品質下降，產生新的問題。
為了消解上述碎屑所致之問題，提案有在晶圓的加工面被覆聚乙烯醇(PVA)等的保護膜，通過保護膜照射雷射光線到晶圓之雷射加工機。(例如，參閱專利文獻1。)
上述專利文獻1揭示的雷射加工機所適用的保護膜的被覆方法，乃是在被保持在旋轉床臺的晶圓的中心部供給聚乙烯醇(PVA)等的水溶性樹脂，經由旋轉床臺，藉由離心力使水溶性樹脂向晶圓的外周圍移動，在晶圓的表面形成保護膜之所謂的旋轉塗布法。
〔先前技術文獻〕 〔專利文獻〕
〔專利文獻1〕日本特開2004-322168號專利公報
然而，晶圓是在被貼著到安裝在環狀的框之保護條帶的表面且被保持在旋轉床臺的狀態下形成保護膜 的緣故，水溶性樹脂飛散附著在環狀的框的上表面。為此，是有在搬運介隔著保護條帶被支撐在環狀的框的晶圓之際，附著在環狀的框的上表面之液狀樹脂發揮如接著劑的作用，無法從搬運單元脫離環狀的框這樣的問題。
而且，提案有在藉由保護膜被覆單元被覆保護膜到晶圓的表面後，對飛散在環狀的框的上表面之水溶性樹脂供給洗淨水，從環狀的框的上表面去除水溶性樹脂；但為了確實去除附著在環狀的框的上表面之水溶性樹脂需要相當的時間，是有無法進行平穩的雷射加工之問題。
本發明為有鑑於上述事實而為之的創作，其主要得技術的課題係提供一種可以容易去除附著在介隔著保護條帶而支撐晶圓之環狀的框的上表面的液狀樹脂之保護膜被覆方法。
為了解決上述主要的技術課題，根據本發明之保護膜被覆方法，係在複數個分割預定線在表面形成格子狀並且在藉由該複數個分割預定線所區劃出的複數個區域形成裝置之晶圓的表面，用水溶性樹脂被覆保護膜；其特徵為，具備：晶圓支撐製程，係介隔著黏著膠帶把晶圓的背面貼著到具有收容晶圓的開口之環狀的框的該開口，用環狀的框支撐晶圓；晶圓保持製程，係在介隔著黏著膠帶把晶圓支撐在環 狀的框之狀態下，把晶圓的表面作為上側保持在旋轉床臺；保護膜被覆製程，係一邊旋轉旋轉床臺一邊把水溶性樹脂滴下到被保持在旋轉床臺之晶圓的表面中央範圍，把水溶性樹脂之保護膜被覆到晶圓的表面；以及水溶性樹脂去除製程，係在該保護膜被覆製程中，去除飛散到環狀的框的上表面之水溶性樹脂；在該水溶性樹脂去除製程中，一邊旋轉旋轉床臺一邊把洗淨噴嘴位置到被保持在旋轉床臺之環狀的框的上表面，而把洗淨水供給到環狀的框的上表面，並且，把空氣噴嘴鄰接到該洗淨噴嘴並位置到旋轉方向下游側，以與被供給到環狀的框的上表面之洗淨水的移動相反那般供給空氣，一邊暫時性的滯留洗淨水一邊朝環狀的框的遠方排出洗淨水。
本發明之保護膜被覆方法，係在該保護膜被覆製程中，包含去除飛散到環狀的框的上表面的水溶性樹脂之水溶性樹脂去除製程。該水溶性樹脂去除製程中，一邊旋轉旋轉床臺，一邊把洗淨噴嘴位置到被保持在旋轉床臺的環狀的框的上表面，把洗淨水供給到環狀的框的上表面，並且，把空氣噴嘴位置到鄰接該洗淨噴嘴並位在旋轉方向下游側，以與供給到環狀的框的上表面的洗淨水的移動相反那般供給空氣，一邊暫時性的使洗淨水滯留，一邊 朝環狀的框的遠方排出洗淨水的緣故，藉由滯留的洗淨水溶解附著在環狀的框的上表面之水溶性樹脂，提升洗淨效果，可以在短時間內有效果地去除水溶性樹脂。從而，消解了在搬運介隔著保護條帶被支撐在環狀的框的晶圓之際，附著在環狀的框的上表面之水溶性樹脂發揮如接著劑的作用，無法從搬運單元脫離環狀的框這樣的問題。
1‧‧‧雷射加工機
2‧‧‧裝置外殼
3‧‧‧夾盤床臺
4‧‧‧雷射光線照射單元
42‧‧‧聚光器
5‧‧‧攝像單元
6‧‧‧顯示單元
7‧‧‧保護膜被覆裝置
71‧‧‧旋轉床臺機構
711‧‧‧旋轉床臺
74‧‧‧水溶性樹脂供給單元
741‧‧‧樹脂供給噴嘴
75‧‧‧洗淨水供給單元
751‧‧‧洗淨水噴嘴
76‧‧‧空氣供給單元
760‧‧‧空氣噴嘴
10‧‧‧半導體晶圓
101‧‧‧分割預定線
102‧‧‧裝置
110‧‧‧保護膜
11‧‧‧環狀的框
12‧‧‧黏著膠帶
13‧‧‧卡匣
14‧‧‧暫置單元
15‧‧‧被加工物搬出搬入單元
16‧‧‧第1被加工物搬運單元
17‧‧‧第2被加工物搬運單元
〔圖1〕為具備用於實施本發明之保護膜被覆方法的保護膜被覆裝置之雷射加工機的立體圖。
〔圖2〕為把在圖1表示的雷射加工機所裝備的保護膜被覆裝置的一部分予以破斷來表示的立體圖。
〔圖3〕為表示把在圖2表示的保護膜被覆裝置的旋轉床臺位置到被加工物搬入搬出位置的狀態之剖視圖。
〔圖4〕為表示把在圖2表示的保護膜被覆裝置的旋轉床臺位置到作業位置的狀態之剖視圖。
〔圖5〕為作為被加工物的半導體晶圓的立體圖。
〔圖6〕為實施晶圓支撐製程之半導體晶圓的立體圖。
〔圖7〕為表示保護膜被覆製程之說明圖。
〔圖8〕為表示水溶性樹脂去除製程之說明圖。
〔圖9〕為表示藉由在圖1表示的雷射加工機所實施的雷射加工溝形成製程之說明圖。
以下，有關本發明之保護膜被覆方法的適合的實施方式，參閱附圖詳細說明之。
於圖1，表示裝備有用於實施本發明之保護膜被覆方法的保護膜被覆裝置之雷射加工機的立體圖。
圖1表示的雷射加工機1，係具備略長方體狀的裝置外殼2。在該裝置外殼2內，作為保持被加工物之被加工物保持單元的夾盤床臺3配設成可移動在切削進給方向也就是箭頭X所表示的方向。夾盤床臺3，係具備吸附夾盤支撐臺31、以及安裝在該吸附夾盤支撐臺31上的吸附夾盤32，藉由未圖示的吸引單元把被加工物也就是例如圓盤狀的半導體晶圓保持在該吸附夾盤32的表面也就是載置面上。而且，夾盤床臺3，係藉由未圖示的旋轉機構構成可以旋動。在如此構成之夾盤床臺3的吸附夾盤支撐臺31，配設有用於固定後述的環狀的框之夾鉗34。
圖示的雷射加工機1，係具備雷射光線照射單元4。雷射光線照射單元4，係具備：雷射光線振盪單元41、以及把藉由該雷射光線振盪單元而振盪之雷射光線予以聚光之聚光器42。
雷射加工機1，係具備：拍攝被保持在上述夾盤床臺3的吸附夾盤32上的被加工物的表面，藉由從上述雷射光線照射單元4的聚光器41所照射的雷射光線檢測應加工的區域之攝像單元5。該攝像單元5，係除了在 本實施方式中藉由可見光線進行拍攝之通常的攝像元件(CCD)之外，還可以用對被加工物照射紅外線之紅外線照明單元、捕捉藉由該紅外線照明單元所照射的紅外線之光學系統、輸出與藉由該光學系統所捕捉到的紅外線對應的電訊號之攝像元件(紅外線CCD)等來構成，把拍攝到的影像訊號送到後述的控制單元。而且，圖示的雷射加工機，係具備：表示藉由攝像單元5所拍攝到的影像之顯示單元6。
雷射加工機1，係具備：在加工前的被加工物也就是晶圓的表面(加工面)被覆保護膜之保護膜被覆裝置7。有關該保護膜被覆裝置7，參閱圖2至圖4說明之。保護膜被覆裝置7，係具備：旋轉床臺機構71、以及包圍該旋轉床臺機構71而配設之洗淨水接受單元72。旋轉床臺機構71，係具備：旋轉床臺711、旋轉驅動該旋轉床臺711之電動馬達712、以及把該電動馬達712支撐在上下方向且可移動之支撐機構713。旋轉床臺711係具備：利用多孔性材料所形成的上表面成為保持被加工物的保持面之吸附夾盤711a，該吸附夾盤711a連通到未圖示的吸引單元。從而，旋轉床臺711、載置被加工物也就是晶圓到吸附夾盤711a，經由未圖示吸引單元作用負壓來緊附的方式把晶圓保持在吸附夾盤711上。尚且，旋轉床臺711係形成比後述的環狀的框的內周大、比外周小的外徑，從而，後述的環狀的框被保持在旋轉床臺711的上表面的話，環狀的框的外周圍部變成從旋轉床臺711的外周 突出到外側的狀態。上述電動馬達712，係在其驅動軸712a的上端連結上述旋轉床臺711。上述支撐機構713，係利用複數根(本實施方式為3根)的支撐腳713a、以及分別連結該支撐腳713a且被安裝到電動馬達712之複數根(本實施方式為3根)的氣缸713b所構成。如此構成之支撐機構713，係經由作動氣缸713b的方式，把電動馬達712及旋轉床臺711，位置到在圖3表示的上方位置也就是被加工物搬入搬出位置、以及在圖4表示的下方位置也就是作業位置。
上述洗淨水接受單元72，係具備：洗淨水接受容器721、支撐該洗淨水接受容器721之3根(於圖2表示有2根)的支撐腳722、以及被安裝到上述電動馬達712的驅動軸712a之蓋構件723。洗淨水接受容器721係如圖3及圖4所表示，利用圓桶狀的外側壁721a與底壁721b與內側壁721c所構成。在底壁721b的中央部設有上述電動馬達712的驅動軸712a所插通的孔721d，形成從該孔721d的周緣突出到上方的內側壁721c。而且，如圖2所表示，在底壁721b設有排液口721e，在該排液口721e連接排液軟管724。上述蓋構件723係形成圓盤狀，具備從其外周圍緣突出到下方的罩殼723a。如此構成之蓋構件723，係電動馬達712及旋轉床臺711位置到在圖4表示的作業位置的話，則位置在罩殼723a隔有間隙與構成上述洗淨水接受容器721之內側壁721c的外側重合的位置。
保護膜被覆裝置7，係具備：對被保持在上述旋轉床臺711之加工前的被加工物也就是晶圓的加工面，供給液狀的水溶性樹脂之水溶性樹脂供給單元74。水溶性樹脂供給單元74，係具備：朝向被保持在旋轉床臺711之加工前的晶圓的加工面供給水溶性樹脂之樹脂供給噴嘴741、以及使該樹脂供給噴嘴741搖動之可以正轉、反轉的電動馬達742，樹脂供給噴嘴741連接到未圖示水溶性樹脂液供給源。樹脂供給噴嘴741，係利用水平延伸的噴嘴部741a、以及從該噴嘴部741a延伸到下方的支撐部741b所構成，配設支撐部741b插通在構成上述洗淨液回收容器721的底壁721b所設之未圖示的插通孔，連接到未圖示的水溶性樹脂液供給源。
保護膜被覆裝置7，係具備：用於供給洗淨水到被保持在上述旋轉床臺711之後述的環狀的框及加工後的晶圓之洗淨水供給單元75。洗淨水供給單元75，係供給把附著到被保持在旋轉床臺711之後述的環狀的框之水溶性樹脂予以洗淨之洗淨水，並且，具備朝向被保持在旋轉床臺711之加工後的晶圓供給洗淨水之洗淨噴嘴751、以及使該洗淨噴嘴751搖動之可以正轉、反轉的電動馬達752，該洗淨噴嘴751連接到未圖示洗淨水供給源。洗淨噴嘴751，係利用水平延伸且末端部朝下方彎曲的噴嘴部751a、以及從該噴嘴部751a的基端往下方延伸之支撐部751b所構成，配設支撐部751b插通在構成上述洗淨液回收容器721的底壁721b所設之未圖示的插通孔，連接到 未圖示的洗淨水供給源。
而且，保護膜被覆裝置7，係如圖2所表示，具備：用於供給空氣到被保持在上述旋轉床臺711之後述的環狀的框之空氣供給單元76。空氣供給單元76，係具備：供給空氣到被保持在上述旋轉床臺711之後述的環狀的框的上表面之空氣噴嘴760、以及使該空氣噴嘴760搖動之可以正轉、反轉的電動馬達(未圖示)，該空氣噴嘴760連接到未圖示空氣供給源。空氣噴嘴760，係利用末端部向下方傾斜且在末端具備複數個噴出口761a之噴嘴部761、以及從該噴嘴部761的基端朝下方延伸之支撐部762所構成，配設支撐部762插通在構成上述洗淨液回收容器721的底壁721b所設之未圖示的插通孔，連接到未圖示的空氣供給源。尚且，噴嘴部761的複數個噴出口761a係配列在水平方向，分別設成稍稍傾斜朝向下方。
回到圖1繼續說明，雷射加工機1，係具備：載置有把作為被加工物也就是晶圓之後述的半導體晶圓予以收容的卡匣之卡匣載置部13a。在卡匣載置部13a藉由未圖示的升降單元配設可上下移動之卡匣床臺131，在該卡匣床臺131上載置卡匣13。
雷射加工機1，係具備：把被收納在上述卡匣13之加工前的半導體晶圓搬出到被配設在暫置部14a之暫置單元14並且把加工後的半導體晶圓搬入到卡匣13之被加工物搬出搬入單元15、把被搬出到暫置單元14之加工前的半導體晶圓搬運到保護膜被覆裝置7並且把藉由保 護膜被覆裝置7被覆了保護膜到表面之半導體晶圓10搬運到上述夾盤床臺3上之第1被加工物搬運單元16、以及把在夾盤床臺3上被雷射加工過的半導體晶圓10搬運到保護膜被覆裝置7之第2被加工物搬運單元17。
雷射加工機1係構成如以上般，以下說明有關使用雷射加工機1，被覆保護膜到被加工物也就是晶圓的表面，施以雷射加工之晶圓的加工方法。於圖5，表示作為被加工物也就是晶圓的半導體晶圓的立體圖。圖5表示的半導體晶圓10係利用矽晶圓所構成，藉由在表面10a形成格子狀之複數個分割預定線101被區劃成複數個區域，在該被區劃過的區域形成IC、LSI等的裝置102。
在被覆保護膜到上述半導體晶圓10的表面，沿分割預定線101施以雷射加工方面，首先，實施在具有收容晶圓的開口之環狀的框的該開口，介隔著黏著膠帶，貼著晶圓的背面，用環狀的框支撐晶圓之晶圓支撐製程。亦即，如圖6所表示，像覆蓋環狀的框11的內側開口部那般，在安裝有外周圍部的黏著膠帶12的表面貼著半導體晶圓10的背面10b。從而，半導體晶圓10係介隔著黏著膠帶12被支撐到環狀的框11。尚且，在圖6表示的實施方式中，表示有在外周圍部被安裝到環狀的框11之黏著膠帶12的表面貼著半導體晶圓10的背面之例，但也可以在半導體晶圓10的背面貼著黏著膠帶12並且同時把黏著膠帶12的外周圍部安裝到環狀的框11。如此介隔著黏著膠帶12被支撐在環狀的框11之半導體晶圓10，係把 加工面也就是表面10a作為上側，收容到圖1所表示的雷射加工機1的卡匣13。
有關如上述般在介隔著黏著膠帶12被收容到卡匣13之環狀的框11支撐的加工前的半導體晶圓10(以下，簡單稱為半導體晶圓10)的表面被覆水溶性樹脂的保護膜，係藉由未圖示的升降單元讓卡匣床臺131上下運動，把被收容在指定的位置的半導體晶圓10位置到搬出位置。接著，被加工物搬出搬入單元15進退作動，把位置在搬出位置的半導體晶圓10搬出到被配設在暫置部14a之暫置單元14。被搬出到暫置單元14的半導體晶圓10，係藉由暫置單元14，被對位到指定的位置。接著，藉由暫置單元14而已被對位的加工前的半導體晶圓10，係藉由第1被加工物搬運單元16的旋旋動作，被搬運到構成保護膜被覆裝置7之旋轉床臺711的吸附夾盤711a上，在介隔著黏著膠帶12被支撐在環狀的框11的狀態下被吸引保持在該吸附夾盤711a(晶圓保持製程)。此時，旋轉床臺711係位置在圖3表示的被加工物搬入搬出位置，水溶性樹脂供給單元74的樹脂供給噴嘴741與洗淨水供給單元75的洗淨噴嘴751及上述空氣供給單元76的空氣噴嘴760係如圖2及圖3所表示，位置在離隔旋轉床臺711的上方之待機位置。
若實施了加工前的半導體晶圓10保持在保護膜被覆裝置7的旋轉床臺711上的晶圓保持製程的話，把旋轉床臺711位置到作業位置，並且，驅動構成水溶性樹 脂供給單元74的樹脂供給噴嘴741的電動馬達742，如圖7的(a)所表示，把樹脂供給噴嘴741的噴嘴部741a的噴出口位置到被保持在旋轉床臺711上的半導體晶圓10的中心部上方。接著，以箭頭A所表示方向用指定的旋轉速度(例如60rpm)、指定時間(例如100秒間)旋轉旋轉床臺711，並且，從樹脂供給噴嘴741的噴嘴部741a以指定量(例如4~5毫米公升/分左右)滴下液狀的水溶性樹脂100。尚且，作為水溶性樹脂，圖示的實施方式中是使用聚乙烯醇(PVA：Poly Vinyl Alcohol)。
如此，經由在被保持在旋轉床臺711的雷射加工前的半導體晶圓10的表面10a(加工面)的中央範圍以4~5毫米公升/分左右滴下聚乙烯醇等的水溶性樹脂100，以60rpm的旋轉速度、100秒旋轉旋轉床臺711的方式，如圖7的(b)所表示，在半導體晶圓10的表面10a(加工面)被覆有厚度為0.2~1μm的保護膜110(保護膜被覆製程)。該保護膜被覆製程中，水溶性樹脂100係藉由離心力朝向環狀的框11流動甚至於飛散，如圖7的(b)所表示，附著到環狀的框11的上表面。
若實施了上述的保護膜被覆製程的話，實施去除附著在環狀的框11的上表面的水溶性樹脂100之水溶性樹脂去除製程。亦即，如圖8的(a)所表示，驅動洗淨水供給單元75的電動馬達752，把洗淨噴嘴751的噴嘴部751a的噴出口位置到被保持在旋轉床臺711上之環狀的框11的上方。而且，驅動空氣供給單元76之未圖 示的電動馬達，把具備構成空氣噴嘴760的噴嘴部761的複數個噴出口761a(參閱圖2)之末端部鄰接到洗淨噴嘴751的噴嘴部751a，位置到旋轉床臺711的旋轉方向下游側。此時，為了不讓被被覆在半導體晶圓10的表面的保護膜110損傷，設在噴嘴部761的末端部之複數個噴出口761a(參閱圖2)位置到自環狀的框11的內側傾斜朝向外側。接著，以箭頭A表示的方向用例如90rpm的旋轉速度一邊旋轉旋轉床臺711一邊從噴嘴部751a的噴出口以140毫米公升/分供給洗淨水77，並且，從空氣噴嘴760的噴嘴部761以3公升/分、15秒的期間供給空氣。該結果，被供給到環狀的框11的上表面之洗淨水77，係從旋轉床臺711的旋轉方向下游側，藉由從空氣噴嘴760的噴嘴部761供給與移動相反的空氣，一邊暫時性的滯留一邊被排出到環狀的框11的外側。為此，藉由滯留的洗淨水，溶解附著在環狀的框11的上表面之水溶性樹脂，提升洗淨效果，如圖8的(b)所表示，可以在短時間內有效果地去除附著在環狀的框11的上表面之水溶性樹脂。
若如上述般在半導體晶圓10的加工面也就是表面10a形成保護膜110，並且，去除附著在環狀的框11的上表面之水溶性樹脂的話，把旋轉床臺711位置到圖3表示的被加工物搬入搬出位置，並且，解除被保持在旋轉床臺711之半導體晶圓10的吸引保持。接著，旋轉床臺711上的半導體晶圓10，係藉由第1被加工物搬運單元16，被搬運到夾盤床臺3的吸附夾盤32上。此時，第1 被加工物搬運單元16，係吸引保持介隔著黏著膠帶12支撐半導體晶圓10之環狀的框11的上表面，並搬運到夾盤床臺3；附著在環狀的框11的上表面之水溶性樹脂已如上述般被去除的緣故，消解了水溶性樹脂發揮如接著劑的作用無法從第1被加工物搬運單元16脫離環狀的框11之問題。
若如上述，把介隔著黏著膠帶12被環狀的框11支撐的半導體晶圓10搬運到夾盤床臺3的吸附夾盤32上的話，經由作動未圖示的吸引單元，貼著了半導體晶圓10的黏著膠帶12側被吸引保持在該吸附夾盤32。而且，環狀的框11係藉由夾鉗34被固定。此時，附著在環狀的框11的上表面之水溶性樹脂係如上述般已被去除的緣故，不會有水溶性樹脂發揮如接著劑的作用而固著夾鉗34的情況。如此，吸引保持半導體晶圓10的夾盤床臺3，係藉由未圖示的移動單元，位置到配設在雷射光線照射單元4之攝像單元5的正下方。
夾盤床臺3位置到攝像單元5的正下方的話，藉由攝像單元5及未圖示的控制單元，實行用於進行在半導體晶圓10形成第1方向之分割預定線101、以及沿分割預定線101照射雷射光線之雷射光線照射單元4的聚光器42的對位之圖案匹配等的影像處理，貫徹雷射光線照射位置的對準。而且，也對相對於形成在半導體晶圓10之上述第1方向而直角延伸的分割預定線101，同樣貫徹雷射光線照射位置的對準。此時，在形成有半導體晶圓 10的分割預定線101之表面10a已形成有保護被覆膜110，在保護膜110不是透明的情況下是可以用紅外線拍攝，從表面來進行對準。
如以上般檢測在被保持在夾盤床臺3上的半導體晶圓10所形成的分割預定線101，進行雷射光線照射位置的對準的話，如在圖9的(a)所表示，把夾盤床臺3移動到照射雷射光線的雷射光線照射單元4的聚光器42所位置的雷射光線照射區域，把指定的分割預定線101位置到聚光器42的正下方。此時，如在圖9的(a)所表示，半導體晶圓10係位置在，分割預定線101的其中一端(圖9的(a)中為左端)位置在聚光器42的正下方的位置。尚且，圖9的(a)及(b)中，省略固定環狀的框11之夾鉗34。接著，一邊從雷射光線照射單元4的聚光器42照射脈衝雷射光線，一邊使夾盤床臺3以指定的加工進給速度移動在圖9的(a)中以箭頭X1所表示的方向。接著，如在圖9的(b)所表示，若分割預定線101的另一端(圖9的(b)中為右端)到達聚光器42的正下位置的話，停止脈衝雷射光線的照射並且停止夾盤床臺3的移動。該雷射加工溝形成製程中，把脈衝雷射光線的聚光點P對焦到分割預定線101的表面附近。
經由上述的雷射加工溝形成製程，如圖9的(c)表示，在半導體晶圓10的分割預定線101形成雷射加工溝120。此時，即便因為雷射光線的照射產生碎屑130，該碎屑130係因為保護膜110被遮斷，不會附著在 裝置102及結合墊等。接著，把上述的雷射加工溝形成製程實施到半導體晶圓10之全部的分割預定線101。
若沿半導體晶圓10之全部的分割預定線101實施了上述的雷射加工溝形成製程的話，保持半導體晶圓10的夾盤床臺3，係回到最初吸引保持半導體晶圓10的位置，在此解除半導體晶圓10的吸引保持並且解除環狀的框11的夾鉗34所致之固定。接著，半導體晶圓10，係藉由第2被加工物搬運單元17，被搬運到構成保護膜被覆裝置7的旋轉床臺711的吸附夾盤711a上，且被吸引保持在該吸附夾盤711a。此時，第2被加工物搬運單元17，係吸引保持介隔著黏著膠帶12支撐半導體晶圓10之環狀的框11的上表面，並搬運到構成保護膜被覆裝置7的旋轉床臺711；附著在環狀的框11的上表面之水溶性樹脂已如上述般被去除的緣故，消解了水溶性樹脂發揮如接著劑的作用無法從第2被加工物搬運單元17脫離環狀的框11之問題。尚且。水溶性樹脂供給單元74的樹脂供給噴嘴741與洗淨水供給單元75的洗淨噴嘴751及上部空氣供給單元76的空氣噴嘴760係如圖2及圖3所表示，位置在離隔旋轉床臺711的上方之待機位置。
若加工後的半導體晶圓10被保持在保護膜被覆裝置7的旋轉床臺711上的話，實行洗淨半導體晶圓10之洗淨製程。亦即，把旋轉床臺711位置到作業位置，並且，驅動洗淨水供給單元75之未圖示的電動馬達，把洗淨噴嘴751的噴嘴部751a的噴出口位置到被保 持在旋轉床臺711上的半導體晶圓10的中心部上方。接著，以例如800rpm的旋轉速度一邊旋轉旋轉床臺711一邊從噴嘴部751a的噴出口噴出例如0.2MPa左右的洗淨水，洗淨半導體晶圓10的加工面也就是表面10a。此時，驅動未圖示的電動馬達，使從洗淨水供給噴嘴751的噴嘴部751a的噴出口所噴出的洗淨水，以從與保持在旋轉床臺711之半導體晶圓10的中心正對的位置一直到與外周圍部正對的位置為止所需角度範圍，做搖動。該結果，被覆在半導體晶圓10的表面10a之保護膜110係如上述般藉由水溶性的樹脂來形成的緣故，可以容易洗掉保護膜110，並且，也可以去除在雷射加工時所產生的碎屑130。
上述的洗淨製程結束的話，實行把已洗淨的半導體晶圓10予以乾燥之乾燥製程。亦即，把洗淨噴嘴751位置到待機位置，經由以例如3000rpm的旋轉速度、15秒左右旋轉旋轉床臺711的方式，旋轉乾燥半導體晶圓10的表面。
若如上述實施了洗淨製程及乾燥製程的話，停止旋轉床臺711的旋轉，把旋轉床臺711位置到圖3表示的被加工物搬入搬出位置，並且，解除被保持在旋轉床臺711之半導體晶圓10的吸引保持。接著，旋轉床臺711上的加工後的半導體晶圓10，係藉由第1被加工物搬運單元16，搬運到被配設在暫置部14a之暫置單元14。被搬運到暫置單元14之加工後的半導體晶圓10，係藉由被 加工物搬出單元15，被收納在卡匣13的指定位置。
10‧‧‧半導體晶圓
10a‧‧‧表面
11‧‧‧環狀的框
12‧‧‧黏著膠帶
77‧‧‧洗淨水
110‧‧‧保護膜
711‧‧‧旋轉床臺
751‧‧‧洗淨水噴嘴
751a‧‧‧噴嘴部
760‧‧‧空氣噴嘴
761‧‧‧噴嘴部

Claims (1)

  1. 一種保護膜被覆方法，係在複數個分割預定線在表面形成格子狀並且在藉由該複數個分割預定線所區劃出的複數個區域形成裝置之晶圓的表面，用水溶性樹脂被覆保護膜；其特徵為，具備：晶圓支撐製程，係介隔著黏著膠帶把晶圓的背面貼著到具有收容晶圓的開口之環狀的框的該開口，用環狀的框支撐晶圓；晶圓保持製程，係在介隔著黏著膠帶把晶圓支撐在環狀的框之狀態下，把晶圓的表面作為上側保持在旋轉床臺；保護膜被覆製程，係一邊旋轉旋轉床臺一邊把水溶性樹脂滴下到被保持在旋轉床臺之晶圓的表面中央範圍，把水溶性樹脂之保護膜被覆到晶圓的表面；以及水溶性樹脂去除製程，係在該保護膜被覆製程中，去除飛散到環狀的框的上表面之水溶性樹脂；在該水溶性樹脂去除製程中，一邊旋轉旋轉床臺一邊把洗淨噴嘴位置到被保持在旋轉床臺之環狀的框的上表面，而把洗淨水供給到環狀的框的上表面，並且，把空氣噴嘴鄰接到該洗淨噴嘴並位置到旋轉方向下游側，以與被供給到環狀的框的上表面之洗淨水的移動相反那般供給空氣，一邊暫時性的滯留洗淨水一邊朝環狀的框的遠方排出洗淨水。
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JP5607387B2 (ja) * 2010-03-02 2014-10-15 株式会社ディスコ レーザー加工装置
JP6061710B2 (ja) * 2013-02-01 2017-01-18 株式会社ディスコ 樹脂被覆装置
JP2014154874A (ja) * 2013-02-07 2014-08-25 Toshiba Corp 膜厚モニタ装置、研磨装置および膜厚モニタ方法
JP6295094B2 (ja) * 2014-02-06 2018-03-14 株式会社ディスコ ウェーハの加工方法
JP6289961B2 (ja) * 2014-03-27 2018-03-07 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法

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