TW201714204A - Processing fluid supply device, substrate processing system, and processing fluid supply method - Google Patents
Processing fluid supply device, substrate processing system, and processing fluid supply method Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
Abstract
Description
本發明係關於供給處理液之處理液供給裝置、具備該供給裝置之基板處理系統、及供給處理液之處理液供給方法。作為使用處理液之處理之對象的基板,包含有例如半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(FED;Field Emission Display)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板等。 The present invention relates to a processing liquid supply device that supplies a processing liquid, a substrate processing system including the supply device, and a processing liquid supply method that supplies the processing liquid. The substrate to be processed by the processing liquid includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for a disk, and a disk. A substrate, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, or the like.
於下述專利文獻1中,揭示有將處理液供給至基板處理部之處理液供給裝置。上述處理液供給裝置包含有:處理液槽,其貯存處理液;處理液配管,其連接處理液槽與基板處理部;及閥,其用以開閉處理液配管。上述處理液供給裝置進一步包含有:加壓單元,其採用所謂的加壓壓送方式,利用氣體對處理液槽之內部之處理液進行加壓,藉此使該處理液移動至處理液配管。 Patent Document 1 listed below discloses a processing liquid supply device that supplies a processing liquid to a substrate processing unit. The processing liquid supply device includes a processing liquid tank that stores a processing liquid, a processing liquid pipe that connects the processing liquid tank and the substrate processing unit, and a valve that opens and closes the processing liquid pipe. The processing liquid supply device further includes a pressurizing unit that pressurizes the processing liquid inside the processing liquid tank by a so-called pressurized pressure feeding method, thereby moving the processing liquid to the processing liquid pipe.
[專利文獻1]日本專利特開2000-21703號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-21703
在如此之處理液供給裝置中,若自基板處理部側被通知不需供給,基板處理部側之閥便會在處理液槽及處理液配管之內部維持為被加壓之狀態下被關閉。因此,在閥關閉以後,處理液槽及處理液配管之內部的壓力仍保持為被加壓之狀態。 In the processing liquid supply device, when it is notified that the supply is not required from the substrate processing unit side, the valve on the substrate processing unit side is closed while the inside of the processing liquid tank and the processing liquid pipe is maintained pressurized. Therefore, after the valve is closed, the pressure inside the treatment liquid tank and the treatment liquid piping is maintained in a pressurized state.
由於利用高壓之加壓氣體持續加壓,因此大量之氣體(氮氣等惰性氣體)便溶入處理液槽及處理液配管之內部之處理液中。因為氣體對液體之溶解度與其壓力成比例,所以在處於高壓狀態之處理液配管之內部,會有氣體大量地溶入於處理液之可能性。 Since the pressurized gas of high pressure is continuously pressurized, a large amount of gas (an inert gas such as nitrogen) is dissolved in the treatment liquid inside the treatment liquid tank and the treatment liquid piping. Since the solubility of the gas to the liquid is proportional to the pressure, there is a possibility that a large amount of gas is dissolved in the treatment liquid inside the treatment liquid pipe in a high pressure state.
若被供給至基板之處理液(可列舉例如有機溶劑等)中含有氣泡,於藉由處理液之液體與氣泡所形成之氣液界面便會吸引而聚集處理液中所包含之微小的異物,而成長為微粒。其結果,會有於乾燥後之基板表面產生微粒之可能性。而且,若處理液中所包含之氣泡量多,氣液界面便會大面積化而存在產生微粒之問題顯著化之可能性。 When a treatment liquid (for example, an organic solvent or the like) supplied to the substrate contains air bubbles, the gas-liquid interface formed by the liquid and the air bubbles of the treatment liquid attracts and collects minute foreign matter contained in the treatment liquid. And grow into particles. As a result, there is a possibility that particles are generated on the surface of the substrate after drying. Further, when the amount of the bubbles contained in the treatment liquid is large, the gas-liquid interface is increased in area, and there is a possibility that the problem of generation of particles is remarkable.
如此之問題不僅於將有機溶劑供給至基板的情形時會產生,於將其他種類之處理液供給至基板的情形時亦存在相同之問題。 Such a problem arises not only in the case where an organic solvent is supplied to the substrate, but also in the case where other kinds of the treatment liquid are supplied to the substrate.
因此,本發明一目的在於提供可減低供給之處理液所包含之氣泡量之處理液供給裝置及處理液供給方法。 Therefore, an object of the present invention is to provide a processing liquid supply device and a processing liquid supply method capable of reducing the amount of bubbles contained in a supply of a processing liquid.
又,本發明另一目的在於提供可抑制或防止微粒產生之基板處理系統。 Further, another object of the present invention is to provide a substrate processing system capable of suppressing or preventing generation of particles.
本發明提供一種處理液供給裝置,係將處理液供給至對基板實施使用處理液之處理之處理單元者,其包含有:處理液槽,其貯存處理液;第1處理液配管,其連接上述處理單元與上述處理液槽;開閉單元,其用以開閉上述第1處理液配管;加壓單元,其利用氣體 對上述處理液槽之內部之處理液進行加壓,藉此使該處理液移動至上述第1處理液配管;壓力調整單元,其用以調整上述處理液槽之內部之壓力;及控制裝置,其為了停止處理液自上述處理液供給裝置朝向上述處理單元之供給,而於上述開閉單元關閉之前控制上述壓力調整單元,使處於加壓狀態之上述處理液槽之內部逐漸地大氣開放,並於該大氣開放開始後關閉上述開閉單元。 The present invention provides a processing liquid supply device that supplies a processing liquid to a processing unit that performs a treatment using a processing liquid on a substrate, and includes a processing liquid tank that stores a processing liquid, and a first processing liquid pipe that is connected to the above a processing unit and the processing liquid tank; an opening and closing unit for opening and closing the first processing liquid pipe; and a pressurizing unit for utilizing the gas Pressurizing the treatment liquid inside the treatment liquid tank to move the treatment liquid to the first treatment liquid pipe; the pressure adjustment unit for adjusting the pressure inside the treatment liquid tank; and a control device In order to stop the supply of the processing liquid from the processing liquid supply device toward the processing unit, the pressure adjusting unit is controlled to open the inside of the processing liquid tank in a pressurized state before the opening and closing unit is closed, and The opening and closing unit is closed after the opening of the atmosphere is started.
根據該構成,於處理液自處理液供給裝置朝向處理單元之供給停止時,控制裝置於開閉單元關閉之前,使因加壓單元而處於加壓狀態之處理液槽之內部逐漸地大氣開放,而於大氣開放開始後關閉上述開閉單元。由於在處理液槽內部之減壓開始後關閉開閉單元,因此,於關閉開閉單元之後,處理液槽之內部及第1處理液配管之內部便被維持在較上述之加壓狀態更為減壓之狀態。由於氣體對液體之溶解度與其壓力成比例,因此在處於該減壓狀態之處理液配管之內部,並不會有較大量之氣體溶入。由於處理液之溶存氣體量較少,因此可減低在處理液中所產生之氣泡量。 According to this configuration, when the supply of the processing liquid from the processing liquid supply device to the processing unit is stopped, the control device gradually opens the atmosphere inside the processing liquid tank that is pressurized by the pressurizing unit before the opening and closing unit is closed. The above-mentioned opening and closing unit is closed after the opening of the atmosphere. Since the opening and closing unit is closed after the pressure reduction in the inside of the processing liquid tank is started, the inside of the processing liquid tank and the inside of the first processing liquid pipe are maintained at a lower pressure than the above-described pressurized state after the opening and closing unit is closed. State. Since the solubility of the gas to the liquid is proportional to the pressure, a large amount of gas is not dissolved inside the treatment liquid pipe in the decompressed state. Since the amount of dissolved gas in the treatment liquid is small, the amount of bubbles generated in the treatment liquid can be reduced.
又,由於逐漸地進行處理液槽之內部之大氣開放,因此亦可抑制或防止溶入於處理液之氣體在該減壓過程中作為氣泡而出現。 Further, since the atmosphere inside the treatment liquid tank is gradually opened, it is possible to suppress or prevent the gas dissolved in the treatment liquid from appearing as bubbles in the decompression process.
藉此,可提供能減低供給之處理液所包含之氣泡量之處理液供給裝置。 Thereby, it is possible to provide a processing liquid supply device capable of reducing the amount of bubbles contained in the supplied processing liquid.
在本發明一實施形態中,上述控制裝置係於上述處理液槽之內部之壓力下降至大氣壓後,關閉上述開閉單元。 In one embodiment of the present invention, the control device closes the opening and closing unit after the pressure inside the processing liquid tank drops to atmospheric pressure.
根據該構成,由於在處理液槽之內部之壓力下降至大氣壓後便關閉開閉單元,因此,於關閉開閉單元後,處理液槽之內部及 第1處理液配管之內部便被維持為大氣壓。因此,可更進一步減低溶入處理液槽之內部及第1處理液配管之內部之處理液的溶存氣體量。因此,可更進一步減低處理液之氣泡量。 According to this configuration, since the opening and closing unit is closed after the pressure inside the treatment liquid tank is lowered to the atmospheric pressure, the inside of the treatment liquid tank is closed after the opening and closing unit is closed. The inside of the first treatment liquid pipe is maintained at atmospheric pressure. Therefore, the amount of dissolved gas of the treatment liquid dissolved in the inside of the treatment liquid tank and the inside of the first treatment liquid pipe can be further reduced. Therefore, the amount of bubbles of the treatment liquid can be further reduced.
所包含上述處理液供給裝置亦可進一步包含用以檢測上述處理液槽之內部之壓力的壓力計,上述控制裝置係在自上述大氣開放開始經過既定時間之時間點時上述壓力計之檢測值未達既定之臨限值之情形時判斷為錯誤狀態。 The processing liquid supply device may further include a pressure gauge for detecting a pressure inside the processing liquid tank, wherein the control device is not detected at a time point when a predetermined time has elapsed since the opening of the atmosphere It is judged to be an error state when the predetermined threshold value is reached.
根據該構成,於自大氣開放開始經過既定時間之時間點時壓力值未達既定之臨限值之情形時判斷為錯誤狀態。藉此,可防止處理液槽之內部之減壓速度過快,因而可更有效地減低處理液所包含之氣泡量。 According to this configuration, the error state is judged to be an error state when the pressure value does not reach the predetermined threshold value at the time point when the predetermined time elapses from the opening of the atmosphere. Thereby, the decompression speed inside the treatment liquid tank can be prevented from being excessively fast, so that the amount of bubbles contained in the treatment liquid can be more effectively reduced.
上述處理液裝置亦可進一步包含有連通上述處理液槽之內部與大氣之大氣連通配管,上述壓力調整單元包含有用以開閉上述大氣連通配管之大氣開閉閥。 The treatment liquid device may further include an atmosphere communication pipe that communicates between the inside of the treatment liquid tank and the atmosphere, and the pressure adjustment unit includes an atmosphere on-off valve that opens and closes the atmosphere communication pipe.
根據該構成,藉由打開大氣開閉閥而打開大氣連通配管,可使處理液槽之內部大氣開放。因此,可利用簡單之構造來實現能使處理液槽之內部大氣開放之構成。 According to this configuration, by opening the atmosphere opening and closing valve and opening the atmosphere communication pipe, the internal atmosphere of the treatment liquid tank can be opened. Therefore, it is possible to realize a configuration in which the internal atmosphere of the processing liquid tank can be opened by a simple structure.
於上述大氣連通配管亦可設置有孔口。於該情形時,由於孔口被設置於大氣連通配管,因此氣體難以通過大氣連通配管之內部。因此,即使打開大氣連通配管,處理液槽之內部也不會一口氣地減壓,而是該內部之壓力會花費某種程度之時間而逐漸地降低。因此,可利用簡單之構造來實現能使處理液槽之內部逐漸地大氣開放之構成。 The atmosphere communication pipe may be provided with an orifice. In this case, since the orifice is provided in the atmosphere communication pipe, it is difficult for the gas to communicate with the inside of the pipe through the atmosphere. Therefore, even if the atmosphere communication pipe is opened, the inside of the treatment liquid tank is not decompressed in one breath, but the internal pressure is gradually lowered in a certain amount of time. Therefore, it is possible to realize a configuration in which the inside of the processing liquid tank is gradually opened to the atmosphere by a simple structure.
上述處理液裝置亦可進一步包含有連通上述處理液槽 之內部與大氣之大氣連通配管,上述壓力調整單元包含有調整上述大氣連通配管之開度之開度調整單元。 The processing liquid device may further include a communication liquid tank connected to the processing solution The inside communicates with the atmosphere of the atmosphere, and the pressure adjustment unit includes an opening adjustment unit that adjusts an opening degree of the atmosphere communication pipe.
根據該構成,藉由調整大氣連通配管之開度,可調整大氣連通配管內部之氣體的通過容易度。因此,於處理液槽之內部之大氣開放時,藉由將大氣連通配管之開度設為較低,可使對處理液槽之內部進行大氣開放開始起至該內部減壓至大氣壓為止之時間變長。因此,可利用簡單之構造來實現能使處理液槽之內部逐漸地大氣開放之構成。 According to this configuration, by adjusting the opening degree of the atmosphere communication pipe, the ease of passage of the gas inside the atmosphere communication pipe can be adjusted. Therefore, when the atmosphere inside the processing liquid tank is opened, the opening of the atmosphere communication pipe can be made low, and the time from when the inside of the processing liquid tank is opened to when the internal pressure is reduced to the atmospheric pressure can be performed. lengthen. Therefore, it is possible to realize a configuration in which the inside of the processing liquid tank is gradually opened to the atmosphere by a simple structure.
上述處理液槽亦可包含有複數個處理液槽,上述第1處理液配管包含有被連接至各處理液槽之個別配管、及連接上述複數個個別配管之各者與上述處理單元之共通配管,上述開閉單元包含有對各個別配管進行開閉之個別開閉閥、及對上述共通配管進行開閉之共通開閉閥。 The processing liquid tank may include a plurality of processing liquid tanks, and the first processing liquid piping includes an individual piping connected to each of the processing liquid tanks, and a common piping connecting the plurality of individual pipings and the processing unit The opening and closing unit includes an individual opening and closing valve that opens and closes each of the separate pipes, and a common opening and closing valve that opens and closes the common pipe.
根據該構成,於處理液自處理液供給裝置朝向處理單元之供給停止時,控制裝置於共通開閉閥及個別開閉閥關閉之前使處於加壓狀態之處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉開閉單元。藉此,即使為設置複數個處理液槽之情形時,仍可減低於處理液所產生之氣泡量。 According to this configuration, when the supply of the processing liquid from the processing liquid supply device to the processing unit is stopped, the control device gradually opens the inside of the processing liquid tank in the pressurized state before the common opening and closing valve and the individual opening and closing valve are closed. The opening and closing unit is closed after the opening of the atmosphere begins. Thereby, even in the case where a plurality of processing liquid tanks are provided, the amount of bubbles generated by the treatment liquid can be reduced.
被貯存於上述處理液槽之處理液亦可包含有有機溶劑。 The treatment liquid stored in the treatment liquid tank may also contain an organic solvent.
於使用有機溶劑作為處理液之情形時,有機溶劑其大部分為易燃性液體,無法藉由泵壓送方式來輸送有機溶劑,而使用前述之加壓單元,來進行有機溶劑對於處理單元之輸送(加壓壓送方式)。於該情形時,可減低處理液供給裝置供給之有機溶劑所包含之氣泡量。 When an organic solvent is used as the treatment liquid, most of the organic solvent is a flammable liquid, and the organic solvent cannot be transported by pumping, and the above-mentioned pressurizing unit is used to carry out the organic solvent to the treatment unit. Delivery (pressurized pressure feed method). In this case, the amount of bubbles contained in the organic solvent supplied from the treatment liquid supply device can be reduced.
又,本發明提供一種基板處理系統,其包含對基板實施 使用處理液之處理之處理單元、及上述處理液供給裝置,上述處理單元包含有:吐出部,其用以吐出應供給至上述基板之處理液;第2處理液配管,其連接上述第1處理液配管與上述吐出部;及處理液閥,其用以開閉上述第2處理液配管;上述控制裝置包含有:控制裝置,其為了停止處理液自上述處理液配管對上述吐出部之供給,而關閉上述處理液閥,然後控制上述壓力調整單元使上述處理液槽之內部減壓。 Moreover, the present invention provides a substrate processing system including performing on a substrate a processing unit that uses a treatment liquid and a processing liquid supply device, wherein the processing unit includes a discharge unit that discharges a processing liquid to be supplied to the substrate, and a second processing liquid pipe that connects the first processing a liquid pipe and the discharge unit; and a process liquid valve for opening and closing the second process liquid pipe; and the control device includes: a control device for stopping supply of the process liquid from the process liquid pipe to the discharge unit; The treatment liquid valve is closed, and then the pressure adjustment unit is controlled to decompress the inside of the treatment liquid tank.
根據該構成,於處理液來自吐出部之吐出停止時,控制裝置首先關閉處理液閥而停止處理液自處理液配管對吐出部之供給,接著使處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉上述開閉單元。 According to this configuration, when the discharge of the treatment liquid from the discharge unit is stopped, the control device first closes the treatment liquid valve, stops the supply of the treatment liquid from the treatment liquid pipe to the discharge portion, and then gradually opens the inside of the treatment liquid tank to the atmosphere. The above-mentioned opening and closing unit is closed after the opening of the atmosphere.
由於在處理液槽內部之減壓開始後關閉開閉單元,因此於關閉開閉單元之後,處理液槽之內部及第1處理液配管之內部便被維持為較上述加壓狀態更減壓之狀態。由於氣體對液體之溶解度與其壓力成比例,因此在處於該減壓狀態之處理液配管之內部,並不會有較大量之氣體溶入。因此,可減低溶入處理液槽之內部及第1處理液配管之內部之處理液的溶存氣體量。由於處理液之溶存氣體量較少,因此可減低在處理液中所產生之氣泡量。 Since the opening and closing unit is closed after the start of the pressure reduction in the inside of the processing liquid tank, the inside of the processing liquid tank and the inside of the first processing liquid pipe are maintained in a state of being depressurized more than the above-described pressurized state after the opening and closing unit is closed. Since the solubility of the gas to the liquid is proportional to the pressure, a large amount of gas is not dissolved inside the treatment liquid pipe in the decompressed state. Therefore, the amount of dissolved gas of the treatment liquid dissolved in the inside of the treatment liquid tank and the inside of the first treatment liquid pipe can be reduced. Since the amount of dissolved gas in the treatment liquid is small, the amount of bubbles generated in the treatment liquid can be reduced.
又,由於逐漸地進行處理液槽之內部之大氣開放,因此亦可抑制或防止溶入於處理液之氣體在該減壓過程中作為氣泡而出現之情形。 Further, since the atmosphere inside the treatment liquid tank is gradually opened, it is possible to suppress or prevent the gas dissolved in the treatment liquid from appearing as bubbles in the decompression process.
藉此,可減低被供給至處理單元之處理液所包含之氣泡量。藉此,可提供能抑制或防止在基板上產生微粒之基板處理系統。 Thereby, the amount of bubbles contained in the treatment liquid supplied to the treatment unit can be reduced. Thereby, a substrate processing system capable of suppressing or preventing generation of particles on the substrate can be provided.
在本發明一實施形態中,上述處理液閥亦可被配置於較上述開閉單元更上方。於該情形時,在將開閉單元配置於較處理液閥 更下方之情形,為了使被貯存於處理液槽之處理液抵達處理單元,需要利用更高壓來壓送處理液槽之內部之處理液。於該情形時,供給時處理液槽及第1處理液配管之內部之壓力變得更高,其結果,會有使前述產生氣泡之問題進一步顯著化之可能性。 In an embodiment of the invention, the processing liquid valve may be disposed above the opening and closing unit. In this case, the opening and closing unit is disposed in the processing liquid valve Further, in order to allow the treatment liquid stored in the treatment liquid tank to reach the treatment unit, it is necessary to pressurize the treatment liquid inside the treatment liquid tank with a higher pressure. In this case, the pressure inside the processing liquid tank and the first processing liquid piping at the time of supply becomes higher, and as a result, there is a possibility that the problem of the occurrence of the above-described bubbles is further remarkable.
然而,由於使處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉開閉單元,因此可更進一步減低被供給至處理單元之處理液所包含之氣泡量,藉此,可更進一步抑制或防止基板上微粒之產生。 However, since the inside of the processing liquid tank is gradually opened to the atmosphere, and the opening and closing unit is closed after the opening of the atmosphere, the amount of bubbles contained in the processing liquid supplied to the processing unit can be further reduced, thereby further suppressing Or prevent the generation of particles on the substrate.
上述處理液供給裝置亦可被配置於較上述處理單元更下層。 The processing liquid supply device may be disposed below the processing unit.
根據該構成,由於將處理液供給裝置設置於下層,因此第1處理液配管之配管長度會變長。因此,於第1處理液配管之內部局部地存在有高壓之部分,藉此,亦存在有使前述產生氣泡之問題進一步顯著化之可能性。 According to this configuration, since the processing liquid supply device is installed in the lower layer, the length of the pipe of the first processing liquid pipe becomes long. Therefore, a portion having a high pressure is locally present inside the first treatment liquid pipe, and there is a possibility that the problem of the occurrence of the bubble is further increased.
然而,由於使處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉開閉單元,因此可更進一步減低被供給至處理單元之處理液所包含之氣泡量,藉此,可更進一步抑制或防止基板上微粒之產生。 However, since the inside of the processing liquid tank is gradually opened to the atmosphere, and the opening and closing unit is closed after the opening of the atmosphere, the amount of bubbles contained in the processing liquid supplied to the processing unit can be further reduced, thereby further suppressing Or prevent the generation of particles on the substrate.
又,本發明提供一種處理液供給方法,係於處理液供給裝置中所執行者,上述處理液供給裝置包含有:處理液槽,其貯存處理液;第1處理液配管,其連接對基板實施使用處理液之處理之處理單元與上述處理液槽;開閉單元,其用以開閉上述第1處理液配管;及加壓單元,其利用氣體對上述處理液槽之內部之處理液進行加壓,藉此使該處理液移動至上述第1處理液配管;其中,為了停止處理液 自上述處理液供給裝置朝向上述處理單元之供給,而使處於加壓狀態之上述處理液槽之內部逐漸地大氣開放,並於該大氣開放開始後關閉上述開閉單元。 Moreover, the present invention provides a processing liquid supply method, which is performed by a processing liquid supply device including: a processing liquid tank for storing a processing liquid; and a first processing liquid pipe connected to the substrate a treatment unit for treating the treatment liquid and the treatment liquid tank; an opening and closing unit for opening and closing the first treatment liquid pipe; and a pressurizing unit for pressurizing the treatment liquid inside the treatment liquid tank by gas Thereby, the treatment liquid is moved to the first treatment liquid pipe; wherein, in order to stop the treatment liquid The supply of the processing liquid supply device to the processing unit is gradually opened to the inside of the processing liquid tank in a pressurized state, and the opening and closing unit is closed after the opening of the atmosphere.
根據本方法,於處理液自處理液供給裝置朝向處理單元之供給停止時,控制裝置於開閉單元關閉之前,使因加壓單元而處於加壓狀態之處理液槽之內部逐漸地大氣開放,並於大氣開放開始後關閉上述開閉單元。由於在處理液槽內部之減壓開始後關閉開閉單元,因此於關閉開閉單元之後,處理液槽之內部及第1處理液配管之內部便被維持為較前述之加壓狀態更減壓之狀態。由於氣體對液體之溶解度與其壓力成比例,因此在處於該減壓狀態之處理液配管之內部,並不會有較大量之氣體溶入。因此,可減低溶入處理液槽之內部及第1處理液配管之內部之處理液的溶存氣體量。由於處理液之溶存氣體量較少,因此可減低在處理液中所產生之氣泡量。 According to the method, when the supply of the treatment liquid from the treatment liquid supply device to the treatment unit is stopped, the control device gradually opens the atmosphere inside the treatment liquid tank which is pressurized by the pressurizing unit before the opening and closing unit is closed, and The above-mentioned opening and closing unit is closed after the opening of the atmosphere. Since the opening and closing unit is closed after the start of the pressure reduction in the inside of the processing liquid tank, the inside of the processing liquid tank and the inside of the first processing liquid pipe are maintained at a state of being decompressed more than the above-described pressurized state after the opening and closing unit is closed. . Since the solubility of the gas to the liquid is proportional to the pressure, a large amount of gas is not dissolved inside the treatment liquid pipe in the decompressed state. Therefore, the amount of dissolved gas of the treatment liquid dissolved in the inside of the treatment liquid tank and the inside of the first treatment liquid pipe can be reduced. Since the amount of dissolved gas in the treatment liquid is small, the amount of bubbles generated in the treatment liquid can be reduced.
又,由於逐漸地進行處理液槽之內部之大氣開放,因此亦可抑制或防止溶入於處理液之氣體在該減壓過程中作為氣泡而出現之情形。 Further, since the atmosphere inside the treatment liquid tank is gradually opened, it is possible to suppress or prevent the gas dissolved in the treatment liquid from appearing as bubbles in the decompression process.
藉此,可提供能減低供給之處理液所包含之氣泡量之處理液供給方法。 Thereby, it is possible to provide a processing liquid supply method capable of reducing the amount of bubbles contained in the supplied processing liquid.
本發明前述之目的或其他之目的、特徵及效果,係藉由參照隨附圖式且進行如下所述之實施形態之說明而明確。 The above and other objects, features and advantages of the present invention will be apparent from
1‧‧‧基板處理系統 1‧‧‧Substrate processing system
2‧‧‧處理單元 2‧‧‧Processing unit
3‧‧‧有機溶劑供給裝置 3‧‧‧Organic solvent supply device
4‧‧‧基板處理裝置 4‧‧‧Substrate processing device
5‧‧‧第1控制裝置 5‧‧‧1st control device
6‧‧‧第2控制裝置 6‧‧‧2nd control device
7‧‧‧處理腔室 7‧‧‧Processing chamber
8‧‧‧有機溶劑噴嘴 8‧‧‧Organic solvent nozzle
9‧‧‧有機溶劑槽 9‧‧‧Organic solvent tank
10‧‧‧有機溶劑個別配管 10‧‧‧Individual solvent individual piping
11‧‧‧有機溶劑共通配管 11‧‧‧Organic solvent common piping
12‧‧‧流量計 12‧‧‧ Flowmeter
13‧‧‧共通開閉閥 13‧‧‧Common opening and closing valve
14‧‧‧個別開閉閥 14‧‧‧Individual opening and closing valves
15‧‧‧加壓單元 15‧‧‧ Pressurizing unit
16‧‧‧壓力計 16‧‧‧ pressure gauge
17‧‧‧大氣連通配管 17‧‧‧Atmospheric communication piping
18‧‧‧大氣開閉閥 18‧‧‧Atmospheric opening and closing valve
19‧‧‧固定孔口 19‧‧‧Fixed orifice
20‧‧‧加壓氣體配管 20‧‧‧ Pressurized gas piping
21‧‧‧加壓閥 21‧‧‧Pressure valve
22‧‧‧處理側配管 22‧‧‧Processing side piping
23‧‧‧處理側共通配管 23‧‧‧Processing side common piping
24‧‧‧處理側分支配管 24‧‧‧Processing side branch piping
25‧‧‧有機溶劑閥 25‧‧‧Organic Solvent Valve
26‧‧‧旋轉夾頭 26‧‧‧Rotary chuck
27‧‧‧藥液噴嘴 27‧‧‧Drug nozzle
28‧‧‧沖洗液噴嘴 28‧‧‧ rinse liquid nozzle
29‧‧‧旋轉基座 29‧‧‧Rotating base
30‧‧‧旋轉驅動單元 30‧‧‧Rotary drive unit
31‧‧‧藥液閥 31‧‧‧Drug valve
32‧‧‧藥液配管 32‧‧‧Pharmaceutical piping
33‧‧‧沖洗液閥 33‧‧‧ rinse valve
34‧‧‧沖洗液配管 34‧‧‧ rinse liquid piping
41‧‧‧液膜 41‧‧‧ liquid film
42‧‧‧異物 42‧‧‧ Foreign objects
43‧‧‧氣泡 43‧‧‧ bubbles
103‧‧‧有機溶劑供給裝置 103‧‧‧Organic solvent supply device
106‧‧‧第3控制裝置 106‧‧‧3rd control device
218‧‧‧開度調整單元 218‧‧‧ opening adjustment unit
D‧‧‧延遲 D‧‧‧Delay
W‧‧‧基板 W‧‧‧Substrate
圖1係顯示本發明一實施形態之基板處理系統之構成之示意圖。 Fig. 1 is a schematic view showing the configuration of a substrate processing system according to an embodiment of the present invention.
圖2係自水平方向觀察上述基板處理系統所具備之處理單元之內 部之示意圖。 2 is a view of the processing unit provided in the substrate processing system viewed from a horizontal direction Schematic diagram of the department.
圖3係顯示在上述基板處理裝置中所執行之吐出停止控制之流程圖。 Fig. 3 is a flow chart showing the discharge stop control executed in the above substrate processing apparatus.
圖4係顯示在有機溶劑供給裝置中所執行之吐出停止控制之流程圖。 Fig. 4 is a flow chart showing the discharge stop control executed in the organic solvent supply device.
圖5係顯示基板處理系統中吐出停止控制之有機溶劑閥、共通開閉閥、個別開閉閥及大氣開閉閥之開閉狀態,暨壓力計之測量值之時機圖。 Fig. 5 is a timing chart showing the measured values of the organic solvent valve, the common opening and closing valve, the individual opening and closing valves, and the atmospheric opening and closing valve of the discharge stop control in the substrate processing system, and the measured values of the pressure gauge.
圖6係顯示自有機溶劑槽內部之大氣開放開始至大氣開放為止之減壓狀況之圖。 Fig. 6 is a view showing a state of decompression from the opening of the atmosphere inside the organic solvent tank to the opening of the atmosphere.
圖7係顯示有機溶劑之液膜所包含微小的異物在基板表面上之狀態之圖。 Fig. 7 is a view showing a state in which a small foreign matter contained in a liquid film of an organic solvent is on the surface of a substrate.
圖8係顯示另一形態之基板處理系統之構成之示意圖。 Fig. 8 is a schematic view showing the configuration of a substrate processing system of another embodiment.
圖9係顯示本發明之變形例之圖。 Fig. 9 is a view showing a modification of the present invention.
圖1係自水平方向觀察本發明一實施形態之基板處理系統1之示意圖。基板處理系統1係對作為基板W之一例之半導體晶圓一次一片地進行處理之單片式系統。基板處理系統1包含有:處理單元2,其對基板W進行處理;及有機溶劑供給裝置3,其係對該處理單元2供給作為處理液之一例之有機溶劑之處理液供給裝置。處理單元2及有機溶劑供給裝置3係相互獨立之單元(可使其等相互獨立地移動之單元)。亦即,如圖1所示,基板處理系統1係例示為具備有:基板處理裝置4,其包含處理單元2;及有機溶劑供給裝置3,其係配置於離開基板處理裝置4之位置。基板處理裝置4係設置於無塵室,另 一方面,有機溶劑供給裝置3係設置於被稱為設備放置區(sub-fab)之、無塵室之下層空間(例如地下層)。基板處理系統1進一步包含有:第1控制裝置5,其對基板處理裝置4所具備之裝置或閥之開閉進行控制;及第2控制裝置6,其對有機溶劑供給裝置3所具備之裝置或閥之開閉進行控制。 Fig. 1 is a schematic view of a substrate processing system 1 according to an embodiment of the present invention as seen from a horizontal direction. The substrate processing system 1 is a one-chip system in which a semiconductor wafer as an example of the substrate W is processed one at a time. The substrate processing system 1 includes a processing unit 2 that processes the substrate W, and an organic solvent supply device 3 that supplies the processing unit 2 with a processing liquid supply device that is an organic solvent as an example of the processing liquid. The processing unit 2 and the organic solvent supply device 3 are mutually independent units (units that can be moved independently of each other). That is, as shown in FIG. 1, the substrate processing system 1 is exemplified by a substrate processing apparatus 4 including a processing unit 2 and an organic solvent supply device 3 disposed at a position away from the substrate processing apparatus 4. The substrate processing device 4 is disposed in a clean room, and In one aspect, the organic solvent supply device 3 is disposed in a space below the clean room (for example, a subterranean layer) called a sub-fab. The substrate processing system 1 further includes: a first control device 5 that controls opening and closing of a device or a valve provided in the substrate processing device 4; and a second control device 6 that is provided to the organic solvent supply device 3 or The valve is opened and closed for control.
又,處理單元2既可為對基板W一次一片地進行處理之單片式單元,亦可為對複數片基板W一次性地進行處理之批次式單元。圖1係顯示處理單元2為單片式單元之例。又,在圖1中,雖圖示有機溶劑供給裝置3僅有1個,但於設有複數種有機溶劑之情形時,亦可設置對應於其液體種類之數量的有機溶劑供給裝置3。 Further, the processing unit 2 may be a one-chip unit that processes the substrate W one at a time, or may be a batch type unit that processes the plurality of substrates W at one time. FIG. 1 shows an example in which the processing unit 2 is a one-chip unit. In addition, although only one organic solvent supply apparatus 3 is shown in FIG. 1, when a plurality of organic solvents are provided, the organic solvent supply device 3 corresponding to the liquid type may be provided.
處理單元2包含有:箱形之處理腔室7,其具有內部空間;有機溶劑噴嘴(吐出部)8,其用以將有機溶劑供給至在處理腔室7內被保持為水平姿勢之基板W(參照圖2)。在該實施形態中,處理單元2係設置有複數個。複數個處理單元係如圖1所示般被配置為例如三層構造,且在圖1中雖省略圖示,但於各層部分例如配置有4個處理單元。在該實施形態中,該處理單元2雖列舉有機溶劑供給裝置3對應於共12個處理單元2而將藥液供給至該等所有之處理單元2者為例,但亦可為,有機溶劑供給裝置3對應於一部分之處理單元2之各者(例如被疊層於縱向上之3個處理單元2之各者)而將藥液供給至該一部分之處理單元2者。 The processing unit 2 includes a box-shaped processing chamber 7 having an internal space, and an organic solvent nozzle (discharge portion) 8 for supplying an organic solvent to the substrate W held in the horizontal position in the processing chamber 7. (Refer to Figure 2). In this embodiment, the processing unit 2 is provided in plural. A plurality of processing units are arranged, for example, in a three-layer structure as shown in FIG. 1. Although not shown in FIG. 1, four processing units are disposed in each layer portion, for example. In this embodiment, the processing unit 2 exemplifies the case where the organic solvent supply device 3 supplies the chemical liquid to all of the processing units 2 corresponding to a total of 12 processing units 2, but may be an organic solvent supply. The device 3 supplies the chemical solution to the processing unit 2 of the portion corresponding to each of the processing units 2 (for example, each of the three processing units 2 stacked in the vertical direction).
有機溶劑供給裝置3包含有:複數個(在圖1中例如為2個)有機溶劑槽(處理液槽)9,其貯存有機溶劑;有機溶劑個別配管(個別配管)10,其係連接於各有機溶劑槽9;及有機溶劑共通配管(共通配管)11,其連接複數個(在圖1中例如為2個)有機溶劑個別配管10之各 者與處理單元2側。被貯存於有機溶劑槽9之有機溶劑例如為IPA(異丙醇;Isopropyl Alcohol)。於各有機溶劑個別配管10介設有對有機溶劑個別配管10進行開閉之個別開閉閥(開閉單元)14。於有機溶劑共通配管11,自有機溶劑槽9側起依序介設有用以測量流通於有機溶劑共通配管11之有機溶劑之流量的流量計12、及對有機溶劑共通配管11進行開閉之共通開閉閥(開閉單元)13。有機溶劑個別配管10及有機溶劑共通配管11係使用PFA(四氟乙烯-全氟烷氧基乙烯基醚共聚物;perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer)等具有耐藥性之樹脂所形成。藉由有機溶劑個別配管10與有機溶劑共通配管11,構成有第1處理液配管。 The organic solvent supply device 3 includes a plurality of (for example, two in FIG. 1) organic solvent tanks (treatment liquid tanks) 9 for storing organic solvents, and an organic solvent individual piping (individual piping) 10, which are connected to each The organic solvent tank 9 and the organic solvent common pipe (common pipe) 11 are connected to each of a plurality of (for example, two in FIG. 1) organic solvent individual pipes 10 And the processing unit 2 side. The organic solvent stored in the organic solvent tank 9 is, for example, IPA (isopropyl alcohol; Isopropyl Alcohol). Each of the organic solvent individual pipes 10 is provided with an individual opening and closing valve (opening and closing means) 14 that opens and closes the organic solvent individual pipe 10. In the organic solvent common pipe 11, a flow meter 12 for measuring the flow rate of the organic solvent flowing through the organic solvent common pipe 11 and a common opening and closing for opening and closing the organic solvent common pipe 11 are sequentially disposed from the organic solvent tank 9 side. Valve (opening and closing unit) 13. The organic solvent individual pipe 10 and the organic solvent common pipe 11 are made of a resin resistant resin such as PFA (tetrafluoroethylene-perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer). form. The organic solvent individual pipe 10 and the organic solvent common pipe 11 constitute a first treatment liquid pipe.
有機溶劑供給裝置3係加壓壓送方式之液體供給裝置。因此,有機溶劑供給裝置3進一步具備有:加壓單元15,其使有機溶劑槽9內之有機溶劑經由有機溶劑個別配管10移動至有機溶劑共通配管11;壓力計16,其用以測量有機溶劑槽9內部之壓力;新液供給單元(未圖示),其將來自有機溶劑供給源之有機溶劑的新液供給至有機溶劑槽9;及液量感測器(未圖示),其用以檢測被貯存於有機溶劑槽9內部之液量(例如液面水平)。加壓單元15、壓力計16、新液供給單元及液量感測器係於每個有機溶劑槽9各設置1個。由於IPA為易燃性液體,因此於採用泵壓送方式之情形時,必須實施防爆對策等。為了謀求裝置之簡化,有機溶劑供給裝置3係採用加壓壓送方式。 The organic solvent supply device 3 is a liquid supply device of a pressurized pressure feed method. Therefore, the organic solvent supply device 3 further includes a pressurizing unit 15 that moves the organic solvent in the organic solvent tank 9 to the organic solvent common pipe 11 via the organic solvent individual pipe 10, and a pressure gauge 16 for measuring the organic solvent. a pressure inside the tank 9; a new liquid supply unit (not shown) that supplies a new liquid from the organic solvent of the organic solvent supply source to the organic solvent tank 9; and a liquid amount sensor (not shown) for The amount of liquid (for example, the liquid level) stored in the inside of the organic solvent tank 9 is detected. The pressurizing unit 15, the pressure gauge 16, the new liquid supply unit, and the liquid amount sensor are provided in each of the organic solvent tanks 9. Since IPA is a flammable liquid, it is necessary to implement explosion-proof measures when using the pump pressure feeding method. In order to simplify the apparatus, the organic solvent supply device 3 is a pressurized pressure feed method.
又,有機溶劑供給裝置3進一步具備有:大氣連通配管17,其連通有機溶劑槽9之內部與大氣;及大氣開閉閥(壓力調整單元)18,其對各大氣連通配管17進行開閉。大氣連通配管17及大氣開閉閥18係設置於每個有機溶劑槽9。於大氣連通配管17,在大氣開閉 閥18之下游側(大氣側)設置有固定孔口(孔口)19。 Further, the organic solvent supply device 3 further includes an atmosphere communication pipe 17 that communicates with the inside of the organic solvent tank 9 and the atmosphere, and an atmospheric on-off valve (pressure adjustment unit) 18 that opens and closes each of the atmosphere communication pipes 17. The atmosphere communication pipe 17 and the atmosphere on-off valve 18 are provided in each of the organic solvent tanks 9. Connected to the atmosphere at the atmosphere 17, opening and closing at the atmosphere A downstream side (atmosphere side) of the valve 18 is provided with a fixing orifice (aperture) 19.
各加壓單元15包含有:加壓氣體配管20,其流通有加壓用之高壓氣體(例如氮氣等之惰性氣體);及加壓閥21,其對加壓氣體配管20進行開閉。藉由打開加壓閥21,來自加壓氣體配管20之高壓氣體便被供給至有機溶劑槽9。在該供給狀態下,有機溶劑槽9內部之壓力、及與該有機溶劑槽9對應之配管10、11內部之壓力係保持為高壓(在該實施形態下,例如為2氣壓左右)。 Each pressurizing unit 15 includes a pressurized gas pipe 20 through which a high-pressure gas for pressurization (for example, an inert gas such as nitrogen gas) flows, and a pressurizing valve 21 that opens and closes the pressurized gas pipe 20. The high pressure gas from the pressurized gas pipe 20 is supplied to the organic solvent tank 9 by opening the pressurizing valve 21. In this supply state, the pressure inside the organic solvent tank 9 and the pressure inside the pipes 10 and 11 corresponding to the organic solvent tank 9 are maintained at a high pressure (for example, about 2 atmospheres in this embodiment).
各有機溶劑槽9係藉由間隔壁而被區隔為容器狀。有機溶劑槽9之間隔壁例如使用不鏽鋼而形成,其整個內表面係使用PTFE(聚四氟乙烯;polytetra-fluoro ethylene)加以塗佈。各有機溶劑槽9之容量為數公升~數十公升。 Each of the organic solvent tanks 9 is partitioned into a container shape by a partition wall. The partition walls of the organic solvent tank 9 are formed, for example, using stainless steel, and the entire inner surface thereof is coated with PTFE (polytetrafluoroethylene). The capacity of each organic solvent tank 9 is several liters to several tens of liters.
有機溶劑係自複數個有機溶劑槽9中所選擇之1個有機溶劑槽9被供給至處理單元2側。而且,若貯存於使用中之一有機溶劑槽9之有機溶劑用完,有機溶劑之供給來源便被切換為另一有機溶劑槽9,而使貯存於該另一有機溶劑槽9之有機溶劑被供給至處理單元2側。 The organic solvent is supplied to the processing unit 2 side from one organic solvent tank 9 selected from the plurality of organic solvent tanks 9. Further, if the organic solvent stored in one of the organic solvent tanks 9 in use is used up, the supply source of the organic solvent is switched to another organic solvent tank 9, and the organic solvent stored in the other organic solvent tank 9 is It is supplied to the processing unit 2 side.
此時,可自新液供給單元(未圖示)將有機溶劑之新液供給至變空之有機溶劑槽9(一有機溶劑槽9)。再者,由於處於加壓狀態之有機溶劑槽9之內部呈高壓狀態,因此於該有機溶劑之供給之前,打開與一有機溶劑槽9對應之大氣開閉閥18,而將該一有機溶劑槽9之內部自高壓狀態減壓至大氣壓,藉此可進行有機溶劑之新液朝向有機溶劑槽9之供給。 At this time, a new liquid of the organic solvent can be supplied from the fresh liquid supply unit (not shown) to the empty organic solvent tank 9 (an organic solvent tank 9). Further, since the inside of the organic solvent tank 9 in a pressurized state is in a high pressure state, the atmosphere opening and closing valve 18 corresponding to the organic solvent tank 9 is opened before the supply of the organic solvent, and the organic solvent tank 9 is opened. The inside is decompressed from the high pressure state to the atmospheric pressure, whereby the supply of the new liquid of the organic solvent to the organic solvent tank 9 can be performed.
有機溶劑之供給來源的切換,係藉由對被介設於各有機溶劑個別配管10之個別開閉閥14進行開閉而進行。亦即,個別開閉 閥14係作為用以切換供給來源之有機溶劑槽9之切換用閥而發揮功能。 The switching of the supply source of the organic solvent is performed by opening and closing the individual opening and closing valves 14 which are interposed in the respective individual pipes 10 of the organic solvent. That is, individual opening and closing The valve 14 functions as a switching valve for switching the organic solvent tank 9 of the supply source.
第2控制裝置6例如使用微電腦而構成。第2控制裝置6具有CPU(中央處理單元)等之運算單元、固定記憶體裝置、硬式磁碟機等之儲存單元、及輸出輸入單元。於儲存單元記憶有供運算單元執行之程式。 The second control device 6 is configured using, for example, a microcomputer. The second control device 6 includes an arithmetic unit such as a CPU (Central Processing Unit), a fixed memory device, a storage unit such as a hard disk drive, and an output input unit. A program for execution by the arithmetic unit is stored in the storage unit.
第2控制裝置6係依據預先被設定於儲存單元之程式,而對共通開閉閥13、個別開閉閥14、大氣開閉閥18、加壓閥21等進行開閉。又,流量計12及壓力計16之檢測輸出被輸入至第2控制裝置6。 The second control device 6 opens and closes the common opening and closing valve 13, the individual opening and closing valve 14, the air opening and closing valve 18, the pressure valve 21, and the like in accordance with a program set in advance in the storage unit. Further, the detection outputs of the flow meter 12 and the pressure gauge 16 are input to the second control device 6.
於將貯存於一有機溶劑槽9之有機溶劑供給至處理單元2側時,第2控制裝置6在關閉與另一有機溶劑槽9對應之個別開閉閥14之狀態下,打開與一有機溶劑槽9對應之個別開閉閥14,且打開共通開閉閥13。又,第2控制裝置6打開與一有機溶劑槽9對應之加壓閥21。藉此,高壓氣體被供給至一有機溶劑槽9,並藉由此時之供給壓(氮壓),使貯存於一有機溶劑槽9之有機溶劑被壓送出相對應之有機溶劑個別配管10,經由該有機溶劑個別配管10而被移動至有機溶劑共通配管11。藉此,有機溶劑自有機溶劑供給裝置3朝向處理單元2被供給。在該有機溶劑之供給狀態下,一有機溶劑槽9內部之壓力、及與該一有機溶劑槽9對應之配管10、11內部之壓力,被保持為高壓(例如為2氣壓左右)。 When the organic solvent stored in the organic solvent tank 9 is supplied to the processing unit 2 side, the second control device 6 opens and closes an organic solvent tank while closing the individual opening and closing valves 14 corresponding to the other organic solvent tank 9. 9 corresponds to the individual opening and closing valve 14, and the common opening and closing valve 13 is opened. Further, the second control device 6 opens the pressurizing valve 21 corresponding to the organic solvent tank 9. Thereby, the high-pressure gas is supplied to the organic solvent tank 9, and the organic solvent stored in the organic solvent tank 9 is pressure-fed out to the corresponding organic solvent individual piping 10 by the supply pressure (nitrogen pressure) at that time. The organic solvent common pipe 10 is moved to the organic solvent common pipe 11 . Thereby, the organic solvent is supplied from the organic solvent supply device 3 toward the processing unit 2. In the supply state of the organic solvent, the pressure inside the organic solvent tank 9 and the pressure inside the pipes 10 and 11 corresponding to the organic solvent tank 9 are maintained at a high pressure (for example, about 2 atmospheres).
又,於將貯存於另一有機溶劑槽9之有機溶劑供給至處理單元2側時,第2控制裝置6在關閉與一有機溶劑槽9對應之個別開閉閥14之狀態下,打開與另一有機溶劑槽9對應之個別開閉閥14,且打開共通開閉閥13。又,第2控制裝置6打開與另一有機溶劑槽9 對應之加壓閥21。藉此,高壓氣體被供給至另一有機溶劑槽9,並藉由此時之供給壓(氮壓),使貯存於另一有機溶劑槽9之有機溶劑被壓送出相對應之有機溶劑個別配管10,經由該有機溶劑個別配管10而被移動至有機溶劑共通配管11。藉此,有機溶劑自有機溶劑供給裝置3朝向處理單元2側被供給。在該有機溶劑之供給狀態下,另一有機溶劑槽9內部之壓力、及與該另一有機溶劑槽9對應之配管10、11內部之壓力,被保持為高壓(例如為2氣壓左右)。 Further, when the organic solvent stored in the other organic solvent tank 9 is supplied to the processing unit 2 side, the second control device 6 opens and the other state in a state where the individual opening and closing valve 14 corresponding to the organic solvent tank 9 is closed. The organic solvent tank 9 corresponds to the individual opening and closing valve 14 and opens the common opening and closing valve 13. Further, the second control device 6 is opened with another organic solvent tank 9 Corresponding pressure valve 21. Thereby, the high-pressure gas is supplied to the other organic solvent tank 9, and the organic solvent stored in the other organic solvent tank 9 is pressure-fed out to the corresponding organic solvent individual piping by the supply pressure (nitrogen pressure) at this time. 10 is moved to the organic solvent common pipe 11 via the organic solvent individual pipe 10 . Thereby, the organic solvent is supplied from the organic solvent supply device 3 toward the processing unit 2 side. In the supply state of the organic solvent, the pressure inside the other organic solvent tank 9 and the pressure inside the pipes 10 and 11 corresponding to the other organic solvent tank 9 are maintained at a high pressure (for example, about 2 atmospheres).
再者,在以下之說明中,將對處理單元2側進行有機溶劑供給中之有機溶劑槽9,稱為「現在之有機溶劑槽9」。 In the following description, the organic solvent tank 9 in the organic solvent supply to the processing unit 2 side is referred to as "the current organic solvent tank 9".
來自有機溶劑供給裝置3之有機溶劑,係經由通過基板處理裝置4內部之處理側配管(第2處理液配管)22而被供給至各處理單元2所包含之有機溶劑噴嘴8。處理側配管22包含有:處理側共通配管23,其係連接於有機溶劑共通配管11;及處理側分支配管24,其連接各有機溶劑噴嘴8與處理側共通配管23。於處理側分支配管24,介設有用以對處理側分支配管24進行開閉之有機溶劑閥25。在有機溶劑自有機溶劑供給裝置3朝向處理單元2側被供給之狀態下,藉由第2控制裝置6打開有機溶劑閥25,使有機溶劑被供給至各處理單元2所包含之有機溶劑噴嘴8。又,處理側共通配管23及處理側分支配管24係使用PFA(四氟乙烯-全氟烷氧基乙烯基醚共聚物;perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer)等具有耐藥性之樹脂而形成。 The organic solvent from the organic solvent supply device 3 is supplied to the organic solvent nozzle 8 included in each processing unit 2 via the processing-side piping (second processing liquid piping) 22 inside the substrate processing apparatus 4. The processing-side common pipe 22 includes a processing-side common pipe 23 connected to the organic solvent common pipe 11 and a processing-side branch pipe 24 that connects the respective organic solvent nozzles 8 and the processing-side common piping 23 . An organic solvent valve 25 for opening and closing the processing side branch pipe 24 is interposed in the processing side branch pipe 24. When the organic solvent is supplied from the organic solvent supply device 3 toward the processing unit 2, the organic solvent valve 25 is opened by the second control device 6, and the organic solvent is supplied to the organic solvent nozzle 8 included in each processing unit 2. . Further, the treatment-side common piping 23 and the treatment-side branch piping 24 are resistant to chemicals such as PFA (perfluoro-alkylvinyl-ether-tetrafluoro-ethlene-copolymer). Formed from a resin.
圖2係朝水平方向觀察處理單元2之內部之示意圖。 2 is a schematic view of the inside of the processing unit 2 as viewed in the horizontal direction.
處理單元2進一步包含有:旋轉夾頭26,其在處理腔室7內以水平姿勢保持一片基板W,並使基板W繞通過基板W中心之鉛 垂的旋轉軸線旋轉;藥液噴嘴27,其用以對被旋轉夾頭26所保持之基板W供給藥液;及沖洗液噴嘴28,其用以對被旋轉夾頭26所保持之基板W供給沖洗液。 The processing unit 2 further includes a rotary chuck 26 that holds a substrate W in a horizontal posture in the processing chamber 7 and causes the substrate W to pass around the center of the substrate W. The vertical axis of rotation rotates; a liquid medicine nozzle 27 for supplying the liquid medicine to the substrate W held by the rotary chuck 26; and a rinse liquid nozzle 28 for supplying the substrate W held by the rotary chuck 26. Washing fluid.
旋轉夾頭26包含有:圓板狀之旋轉基座29,其大致水平地保持基板W而可繞鉛垂軸線旋轉;及馬達等之旋轉驅動單元30,其使該旋轉基座29繞鉛垂軸線旋轉。藥液噴嘴27及沖洗液噴嘴28既可分別為基板W上之藥液及沖洗液之著液位置被固定之固定噴嘴,亦可為藥液及沖洗液之著液位置在基板W之旋轉中心至基板W之周緣之範圍內移動之掃描噴嘴。 The rotary chuck 26 includes a disk-shaped rotary base 29 that substantially horizontally holds the substrate W to be rotatable about a vertical axis, and a rotary drive unit 30 of a motor or the like that causes the rotary base 29 to be vertically The axis rotates. The chemical liquid nozzle 27 and the rinsing liquid nozzle 28 may be fixed nozzles in which the liquid medicine position of the liquid medicine and the rinsing liquid on the substrate W are fixed, or the liquid liquid position of the chemical liquid and the rinsing liquid may be at the rotation center of the substrate W. A scanning nozzle that moves into the range of the periphery of the substrate W.
藥液噴嘴27係連接於介設有藥液閥31之藥液配管32。藥液被供給至藥液噴嘴27。被供給至藥液噴嘴27之藥液,例如包含硫酸、醋酸、硝酸、鹽酸、氫氟酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如TMAH:四甲基氫氧化銨等)、及界面活化劑、防腐蝕劑中之至少一者之液體。 The chemical liquid nozzle 27 is connected to the chemical liquid pipe 32 through which the chemical liquid valve 31 is disposed. The chemical liquid is supplied to the chemical liquid nozzle 27. The chemical liquid supplied to the chemical liquid nozzle 27 includes, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acid (for example, citric acid, oxalic acid, etc.), and an organic base (for example, TMAH: four A liquid of at least one of methyl alkoxide or the like and an interface activator or an anticorrosive agent.
沖洗液噴嘴28係連接於介設有沖洗液閥33之沖洗液配管34。作為沖洗液之一例之純水(去離子水:Deionized Water)被供給至沖洗液噴嘴28。被供給至沖洗液噴嘴28之沖洗液並不限定於純水,亦可為碳酸水、電解離子水、氫水、臭氧水、及稀釋濃度(例如10~100ppm左右)之鹽酸水中之任一者。 The rinse liquid nozzle 28 is connected to the rinse liquid pipe 34 through which the rinse liquid valve 33 is disposed. Pure water (deionized water) as an example of the rinsing liquid is supplied to the rinsing liquid nozzle 28. The rinse liquid supplied to the rinse liquid nozzle 28 is not limited to pure water, and may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm). .
第1控制裝置5例如使用電腦而構成。第1控制裝置5具有CPU等之運算單元、固定記憶體裝置、硬式磁碟機等之儲存單元、及輸出輸入單元。於儲存單元記憶有供運算單元執行之程式。第1控制裝置5係依據預先被設定於儲存單元之程式,而對旋轉驅動單元30等之動作進行控制。此外,第1控制裝置5對有機溶劑閥25、藥液閥 31、沖洗液閥33等之開閉動作等進行控制。又,第1控制裝置5(基板處理裝置4)係設置為可與第2控制裝置6(有機溶劑供給裝置3)相互地通信。 The first control device 5 is configured using, for example, a computer. The first control device 5 includes an arithmetic unit such as a CPU, a fixed memory device, a storage unit such as a hard disk drive, and an output input unit. A program for execution by the arithmetic unit is stored in the storage unit. The first control device 5 controls the operation of the rotary drive unit 30 or the like in accordance with a program set in advance in the storage unit. Further, the first control device 5 pairs the organic solvent valve 25 and the chemical liquid valve 31. The opening and closing operations of the flushing liquid valve 33 and the like are controlled. Further, the first control device 5 (substrate processing device 4) is provided to be communicable with the second control device 6 (organic solvent supply device 3).
如圖1及圖2所示,於基板處理裝置4所包含之處理單元2之處理開始前,第1控制裝置5將供給要求信號傳送至有機溶劑供給裝置3。若有機溶劑供給裝置3收到供給要求信號,第2控制裝置6便打開與現在之有機溶劑槽9對應之個別開閉閥14,且打開共通開閉閥13,且打開與現在之有機溶劑槽9對應之加壓閥21。藉此,成為有機溶劑可自有機溶劑供給裝置3經由有機溶劑共通配管11而朝向處理單元2供給之狀態。在有機溶劑供給裝置3供給有機溶劑之狀態下,現在之有機溶劑槽9內部之壓力、及與該有機溶劑槽9對應之配管10、11內部之壓力,被保持為高壓(例如為2氣壓左右)。 As shown in FIGS. 1 and 2, before the start of the process of the processing unit 2 included in the substrate processing apparatus 4, the first control device 5 transmits a supply request signal to the organic solvent supply device 3. When the organic solvent supply device 3 receives the supply request signal, the second control device 6 opens the individual opening and closing valve 14 corresponding to the current organic solvent tank 9, opens the common opening and closing valve 13, and opens to correspond to the current organic solvent tank 9. Pressurizing valve 21. Thereby, the organic solvent can be supplied from the organic solvent supply device 3 to the processing unit 2 via the organic solvent common pipe 11 . In the state where the organic solvent supply device 3 supplies the organic solvent, the pressure inside the organic solvent tank 9 and the pressure inside the pipes 10 and 11 corresponding to the organic solvent tank 9 are maintained at a high pressure (for example, about 2 atmospheres). ).
如圖2所示,於在處理單元2對基板W進行使用處理液(藥液、沖洗液及有機溶劑)之處理時,第1控制裝置5藉由旋轉夾頭26一邊水平地保持基板W,一邊使該基板W繞鉛垂之軸線旋轉。於該狀態下,第1控制裝置5打開藥液閥31,使藥液自藥液噴嘴27朝向基板W之上表面吐出。被供給至基板W之藥液,藉由因基板W之旋轉所產生之離心力而在基板W上向外擴散,並自基板W之上表面周緣部朝基板W之周圍被排出。第1控制裝置5於使來自藥液噴嘴27之藥液之吐出停止後,藉由打開沖洗液閥33,而使沖洗液自沖洗液噴嘴28朝向旋轉狀態之基板W之上表面吐出。藉此,使基板W上之藥液藉由沖洗液所沖洗掉。第1控制裝置5於使來自沖洗液噴嘴28之沖洗液之吐出停止後,藉由打開有機溶劑閥25,而使有機溶劑自有機溶劑噴嘴8朝向旋轉狀態之基板W之上表面吐出。藉此,使基板W上 之沖洗液被置換為有機溶劑。然後,第1控制裝置5藉由利用旋轉夾頭26使基板W高速旋轉,而使基板W乾燥。如此,進行對基板W之一連串之處理。 As shown in FIG. 2, when the processing unit 2 processes the substrate W with the processing liquid (chemical liquid, rinsing liquid, and organic solvent), the first control device 5 holds the substrate W horizontally by rotating the chuck 26. The substrate W is rotated about the vertical axis. In this state, the first control device 5 opens the chemical liquid valve 31, and discharges the chemical liquid from the chemical liquid nozzle 27 toward the upper surface of the substrate W. The chemical liquid supplied to the substrate W is diffused outward on the substrate W by the centrifugal force generated by the rotation of the substrate W, and is discharged from the peripheral portion of the upper surface of the substrate W toward the periphery of the substrate W. After the discharge of the chemical liquid from the chemical liquid nozzle 27 is stopped, the first control device 5 opens the rinse liquid valve 33, and discharges the rinse liquid from the rinse liquid nozzle 28 toward the upper surface of the substrate W in the rotated state. Thereby, the liquid medicine on the substrate W is washed away by the rinsing liquid. After the discharge of the rinse liquid from the rinse liquid nozzle 28 is stopped, the first control device 5 opens the organic solvent valve 25 to discharge the organic solvent from the organic solvent nozzle 8 toward the upper surface of the substrate W in the rotated state. Thereby, the substrate W is made The rinse solution is replaced with an organic solvent. Then, the first control device 5 causes the substrate W to be dried at a high speed by the spin chuck 26 to dry the substrate W. In this way, a series of processes for the substrate W are performed.
圖3係顯示在基板處理裝置4所執行之吐出停止控制之流程圖。圖4係顯示在有機溶劑供給裝置3所執行之吐出停止控制之流程圖。圖5係顯示基板處理系統1中吐出停止控制之有機溶劑閥25、共通開閉閥13、個別開閉閥14及大氣開閉閥18之開閉狀態,暨壓力計16之測量值之時機圖。圖6係顯示自有機溶劑槽9之內部之大氣開放開始至大氣開放為止之減壓狀況之圖。 FIG. 3 is a flow chart showing the discharge stop control executed by the substrate processing apparatus 4. Fig. 4 is a flow chart showing the discharge stop control executed by the organic solvent supply device 3. FIG. 5 is a timing chart showing the measured values of the organic solvent valve 25, the common opening and closing valve 13, the individual opening and closing valve 14, and the atmospheric opening and closing valve 18 in the substrate processing system 1 and the opening and closing state of the atmospheric opening and closing valve 18. Fig. 6 is a view showing a state of decompression from the opening of the atmosphere inside the organic solvent tank 9 to the opening of the atmosphere.
在處理單元2中,若成為有機溶劑自有機溶劑噴嘴8之吐出時機,第1控制裝置5便打開有機溶劑閥25。藉此,使有機溶劑自有機溶劑噴嘴8被吐出。 In the processing unit 2, when the organic solvent is discharged from the organic solvent nozzle 8, the first control device 5 opens the organic solvent valve 25. Thereby, the organic solvent is discharged from the organic solvent nozzle 8.
然後,若成為吐出停止時機(在圖3之步驟S1為是),第1控制裝置5便關閉有機溶劑閥25(圖3之步驟S2)。然後,於第1控制裝置5判斷基板處理裝置4為有機溶劑不需供給之狀態之情形時(在圖3之步驟S3為是),第1控制裝置5便對有機溶劑供給裝置3傳送不需供給信號(圖3之步驟S4)。又,於並非吐出停止時機之情形(在圖3之步驟S1為否)、判斷為並非有機溶劑不需供給之狀態之情形(在圖3之步驟S3為否)、及傳送不需供給信號後,圖3所示之處理便返回。 Then, when the discharge stop timing is reached (YES in step S1 in Fig. 3), the first control device 5 closes the organic solvent valve 25 (step S2 in Fig. 3). Then, when the first control device 5 determines that the substrate processing device 4 is in a state where the organic solvent is not required to be supplied (YES in step S3 of FIG. 3), the first control device 5 does not need to transmit the organic solvent supply device 3. The signal is supplied (step S4 of Fig. 3). In addition, in the case where the stop timing is not issued (NO in step S1 of FIG. 3), it is determined that the organic solvent is not in a state of being supplied (NO in step S3 of FIG. 3), and after the supply of the signal is not required. The process shown in Figure 3 returns.
所謂有機溶劑不需供給之狀態,係指基板處理裝置4已不需供給更多有機溶劑之狀態。作為有機溶劑不需供給之狀態的一例,可列舉在一處理單元2之有機溶劑之吐出的結束時間點,另一處理單元2之有機溶劑之吐出已結束之狀態。又,除了另一處理單元2 之有機溶劑之吐出結束以外,亦可將在其後短暫之期間,基板處理裝置4所包含之處理單元2並無有機溶劑之吐出預定的情形,增加至有機溶劑不需供給之狀態的成立條件中。 The state in which the organic solvent is not supplied is a state in which the substrate processing apparatus 4 does not need to supply more organic solvent. An example of a state in which the organic solvent is not required to be supplied is a state in which the discharge of the organic solvent in the processing unit 2 is completed, and the discharge of the organic solvent in the other processing unit 2 is completed. Also, in addition to another processing unit 2 In addition to the completion of the discharge of the organic solvent, the processing unit 2 included in the substrate processing apparatus 4 may not have a predetermined discharge state of the organic solvent, and may be added to the condition in which the organic solvent is not supplied. in.
若收到來自基板處理裝置4之不需供給信號(在圖4之步驟T1為是)、第2控制裝置6便打開與現在之有機溶劑槽9對應之大氣開閉閥18(圖4之步驟T2)。 When the supply signal from the substrate processing apparatus 4 is not received (YES in step T1 of FIG. 4), the second control unit 6 opens the atmospheric on-off valve 18 corresponding to the current organic solvent tank 9 (step T2 of FIG. 4). ).
藉由打開大氣開閉閥18,使有機溶劑槽9之內部被減壓。然而,由於固定孔口19係設置於大氣連通配管17,因此氣體難以通過大氣連通配管17之內部。因此,即便打開大氣連通配管17,有機溶劑槽9之內部也不會一口氣被減壓,該內部之壓力會花費某程度之時間逐漸地降低。亦即,自有機溶劑槽9內部之大氣開放開始至該內部壓力下降到大氣壓為止,將花費某程度之時間。藉由將大氣開閉閥18與固定孔口19加以組合,可實現能使處於加壓狀態之有機溶劑槽9之內部逐漸地大氣開放之構成。 The inside of the organic solvent tank 9 is depressurized by opening the atmospheric opening and closing valve 18. However, since the fixed orifice 19 is provided in the atmosphere communication pipe 17, it is difficult for the gas to communicate with the inside of the pipe 17 through the atmosphere. Therefore, even if the atmosphere communication pipe 17 is opened, the inside of the organic solvent tank 9 is not depressurized at a time, and the internal pressure is gradually lowered for a certain period of time. That is, it takes a certain amount of time from the start of the opening of the atmosphere inside the organic solvent tank 9 until the internal pressure drops to the atmospheric pressure. By combining the atmospheric opening and closing valve 18 and the fixed orifice 19, it is possible to gradually open the atmosphere of the organic solvent tank 9 in a pressurized state.
再者,如圖5所示,於有機溶劑閥25之關閉與大氣開閉閥18之開放之間,存在有既定之延遲D。 Further, as shown in FIG. 5, there is a predetermined delay D between the closing of the organic solvent valve 25 and the opening of the atmosphere opening and closing valve 18.
接著,第2控制裝置6參照與現在之有機溶劑槽9對應之壓力計16之檢測輸出,來調查現在之有機溶劑槽9之內部是否被減壓至大氣壓(圖4之步驟T3)。然後,若現在之有機溶劑槽9內部之壓力下降至大氣壓(在圖4之步驟T3為是),第2控制裝置6便關閉共通開閉閥13及個別開閉閥14(圖4之步驟T4)。因此,閥13、14之關閉以後,有機溶劑槽9之內部、有機溶劑個別配管10之內部及有機溶劑共通配管11之內部,便被維持為大氣壓。由於氣體對液體之溶解度與其壓力成比例,因此大氣壓之液體並不會有較大量之氣體溶入。因此, 可減低溶入有機溶劑槽9之內部、有機溶劑個別配管10之內部及有機溶劑共通配管11之內部之有機溶劑的溶存氣體量。 Next, the second control device 6 refers to the detection output of the pressure gauge 16 corresponding to the current organic solvent tank 9, and checks whether or not the inside of the organic solvent tank 9 is reduced to atmospheric pressure (step T3 in Fig. 4). Then, when the pressure inside the organic solvent tank 9 is lowered to the atmospheric pressure (YES in step T3 in Fig. 4), the second control unit 6 closes the common opening and closing valve 13 and the individual opening and closing valve 14 (step T4 in Fig. 4). Therefore, after the valves 13 and 14 are closed, the inside of the organic solvent tank 9, the inside of the organic solvent individual pipe 10, and the inside of the organic solvent common pipe 11 are maintained at atmospheric pressure. Since the solubility of the gas to the liquid is proportional to its pressure, the liquid at atmospheric pressure does not have a relatively large amount of gas dissolved therein. therefore, The amount of dissolved gas of the organic solvent dissolved in the inside of the organic solvent tank 9, the inside of the organic solvent individual pipe 10, and the organic solvent common pipe 11 can be reduced.
於現在之有機溶劑槽9內部之壓力高於大氣壓之情形時(在圖4之步驟T3為否),接著,第2控制裝置6對自大氣開閉閥18之開啟(亦即,大氣開放)起是否已經過既定時間(X秒(例如5秒左右))進行調查(圖4之步驟T5)。然後,若自大氣開閉閥18之開啟起經過X秒(在圖4之步驟T5為是),第2控制裝置6便參照與現在之有機溶劑槽9對應之壓力計16之檢測輸出(圖4之步驟T6)。此時,為自大氣開放起經過X秒後之測量值(測量壓力)未達臨限值(設定為較大氣壓略為高壓之既定的臨限值)之情形時,第2控制裝置6便判斷為錯誤狀態。 When the pressure inside the organic solvent tank 9 is higher than the atmospheric pressure (NO in step T3 of FIG. 4), then the second control device 6 starts from the opening of the atmospheric opening and closing valve 18 (that is, the atmosphere is open). Whether or not the predetermined time (X seconds (for example, about 5 seconds)) has been investigated (step T5 of Fig. 4). Then, if X seconds elapse from the opening of the atmospheric on-off valve 18 (YES in step T5 of FIG. 4), the second control unit 6 refers to the detection output of the pressure gauge 16 corresponding to the current organic solvent tank 9 (FIG. 4). Step T6). At this time, when the measured value (measured pressure) after X seconds has elapsed since the opening of the atmosphere has not reached the threshold value (set to a predetermined threshold value in which the large air pressure is slightly high), the second control device 6 determines that Error status.
第2控制裝置6具備記憶體(未圖示)。於該記憶體係儲存有壓力值之臨限值。如圖6所示,臨限值係自大氣開放開始X秒後之下限壓力值,於測量值未達該臨限值之情形時,若有機溶劑槽9內部之減壓速度過快,被作為急速減壓而判斷為錯誤狀態。圖6所示之虛線係錯誤狀態。圖6所示之兩點鏈線為並非錯誤之狀態(OK之狀態)。若有機溶劑槽9內部之減壓速度過快,便會有溶存於有機溶劑之氣體在該減壓過程中作為氣泡(微氣泡)而出現之可能性。因此,第2控制裝置6便將有機溶劑槽9內部之減壓速度較既定速度快之情形作為錯誤狀態而檢出。 The second control device 6 is provided with a memory (not shown). The threshold value of the pressure value is stored in the memory system. As shown in Fig. 6, the threshold value is the lower limit pressure value after X seconds from the start of the atmosphere opening. If the measured value does not reach the threshold value, if the decompression speed inside the organic solvent tank 9 is too fast, it is taken as It is judged to be in an error state by rapid decompression. The dotted line shown in Fig. 6 is an error state. The two-point chain line shown in Fig. 6 is in a state of not being erroneous (OK state). When the decompression rate inside the organic solvent tank 9 is too fast, there is a possibility that a gas dissolved in the organic solvent appears as bubbles (microbubbles) during the depressurization. Therefore, the second control device 6 detects that the decompression speed inside the organic solvent tank 9 is faster than the predetermined speed as an error state.
若第2控制裝置6判斷為錯誤狀態,便進行既定之錯誤處理(圖4之步驟T7)。作為錯誤處理,可列舉將錯誤狀態之發生儲存於記錄檔,或者自基板處理裝置4或有機溶劑供給裝置3發出警報之情形等。 When the second control device 6 determines that it is in an error state, it performs a predetermined error process (step T7 in Fig. 4). The error processing includes a case where the occurrence of an error state is stored in the recording file, or an alarm is issued from the substrate processing apparatus 4 or the organic solvent supply device 3.
又,於未收到不需供給信號之情形(圖4之步驟T1為 否)、自大氣開閉閥18之開啟起未經過X秒之情形(圖4之步驟T5為否)、測量值為臨限值以上之情形(圖4之步驟T5為是)、閥13、14之關閉後及錯誤處理之結束後,圖4所示之處理便返回。 Moreover, in the case where the signal is not required to be supplied (step T1 of FIG. 4 is No), when X seconds have not elapsed since the opening of the atmospheric opening and closing valve 18 (NO in step T5 of Fig. 4), the measured value is above the threshold value (YES in step T5 of Fig. 4), valves 13, 14 After the shutdown and the end of the error processing, the processing shown in Fig. 4 is returned.
圖7係顯示有機溶劑之液膜41所包含微小的異物42在基板W表面上之狀態之圖。藉由將有機溶劑供給至基板W之表面,而於基板W之表面形成有機溶劑之液膜41。 Fig. 7 is a view showing a state in which the fine foreign matter 42 contained in the liquid film 41 of the organic solvent is on the surface of the substrate W. A liquid film 41 of an organic solvent is formed on the surface of the substrate W by supplying an organic solvent to the surface of the substrate W.
存在有自有機溶劑噴嘴8所吐出之有機溶劑含有氣泡43之情形。若有機溶劑之液膜41中含有氣泡43,便藉由有機溶劑之液體與氣泡43而形成氣液界面。有機溶劑所包含微小的異物42會被吸引而聚集至該氣液界面,而成長為既定大小之微小微粒。其結果,存在有乾燥後之基板W表面會產生微小微粒之可能性。而且,若有機溶劑之液膜41中所包含之氣泡量較多,便存在有氣液界面大面積化而使微小微粒產生之問題顯著化之可能性。 There is a case where the organic solvent discharged from the organic solvent nozzle 8 contains the air bubbles 43. When the liquid film 41 of the organic solvent contains the air bubbles 43, the gas-liquid interface is formed by the liquid of the organic solvent and the air bubbles 43. The minute foreign matter 42 contained in the organic solvent is attracted to the gas-liquid interface, and grows into minute particles of a predetermined size. As a result, there is a possibility that fine particles are generated on the surface of the substrate W after drying. Further, when the amount of the bubbles contained in the liquid film 41 of the organic solvent is large, there is a possibility that the gas-liquid interface has a large area and the problem of generation of fine particles is remarkable.
又,參照圖1而如前所述,有機溶劑供給裝置3之設置場所為基板處理裝置4之下層(下層設置)。換言之,閥13、14係配置於較有機溶劑閥25更下方。於該情形時,為了使被貯存於有機溶劑槽9之有機溶劑抵達處理單元2,需要以更高壓來壓送有機溶劑槽9內之有機溶劑。於該情形時,槽等9、10、11內部之壓力變得更高,其結果,存在有使氣泡產生之問題更進一步顯著化之可能性。 Further, as described above with reference to Fig. 1, the installation place of the organic solvent supply device 3 is the lower layer (lower layer) of the substrate processing apparatus 4. In other words, the valves 13 and 14 are disposed below the organic solvent valve 25. In this case, in order to allow the organic solvent stored in the organic solvent tank 9 to reach the treatment unit 2, it is necessary to pressurize the organic solvent in the organic solvent tank 9 at a higher pressure. In this case, the pressure inside the grooves 9, 10, and 11 becomes higher, and as a result, there is a possibility that the problem of generating bubbles is further remarkable.
又,由於將有機溶劑供給裝置3設置於下層,因此有機溶劑共通配管11之配管長度較長(例如為5~10m)。因此,於有機溶劑共通配管11之內部局部地存在有高壓之部分,藉此,亦存在使前述之氣泡產生之問題進一步顯著化之可能性。 Moreover, since the organic solvent supply device 3 is provided in the lower layer, the pipe length of the organic solvent common pipe 11 is long (for example, 5 to 10 m). Therefore, a portion having a high pressure is locally present inside the organic solvent common pipe 11, and there is a possibility that the problem of the bubble generation described above is further enhanced.
此處,為了有助於本實施形態之特徵及功效的理解,作 為參考例而對其他形態之基板處理系統進行討論。 Here, in order to contribute to the understanding of the features and effects of the present embodiment, Other forms of substrate processing systems are discussed for reference.
圖8係顯示其他形態之基板處理系統之構成之示意圖。 Fig. 8 is a view showing the configuration of a substrate processing system of another form.
於其他形態中,對與本發明一實施形態所示之各部分對應之部分,賦予與圖1~圖6之情形相同之參照符號而加以顯示,並省略其說明。 In the other aspects, portions corresponding to those in the first embodiment of the present invention are denoted by the same reference numerals as in the case of FIGS. 1 to 6 and the description thereof is omitted.
其他形態之基板處理系統,具備有:有機溶劑供給裝置103;及第3控制裝置106,其對有機溶劑供給裝置103進行控制。第3控制裝置106係藉由電腦所構成。有機溶劑供給裝置103與前述之有機溶劑供給裝置3相異之點,在於廢除大氣連通配管17(參照圖1)、大氣開閉閥18(參照圖1)及壓力計16(參照圖1)的部分。其他構成則與前述之有機溶劑供給裝置3相同。 The substrate processing system of another form includes an organic solvent supply device 103 and a third control device 106 that controls the organic solvent supply device 103. The third control device 106 is constituted by a computer. The difference between the organic solvent supply device 103 and the above-described organic solvent supply device 3 is that the atmospheric communication pipe 17 (see FIG. 1), the atmospheric opening and closing valve 18 (see FIG. 1), and the pressure gauge 16 (see FIG. 1) are discarded. . The other configuration is the same as that of the organic solvent supply device 3 described above.
在此種有機溶劑供給裝置103中,若收到來自基板處理裝置4之不需供給信號(若有機溶劑閥25被關閉),第3控制裝置106便接著關閉共通開閉閥13及個別開閉閥14。在如前述般供給有機溶劑之狀態之有機溶劑供給裝置3中,現在之有機溶劑槽9及與該有機溶劑槽9對應之配管10、11(以下,有時會稱為「槽等9、10、11」)內部之壓力被保持為高壓(例如為2氣壓左右)。由於不釋放槽等9、10、11內部之壓力,而關閉共通開閉閥13及個別開閉閥14,因此於閥13、14之關閉以後,槽等9、10、11內部之壓力仍會被保持為高壓之狀態。 In the organic solvent supply device 103, if a supply signal is not received from the substrate processing device 4 (if the organic solvent valve 25 is closed), the third control device 106 then closes the common on-off valve 13 and the individual on-off valve 14 . In the organic solvent supply device 3 in a state in which the organic solvent is supplied as described above, the organic solvent tank 9 and the pipes 10 and 11 corresponding to the organic solvent tank 9 (hereinafter, may be referred to as "slots, etc. 9, 10" , 11") The internal pressure is maintained at a high pressure (for example, about 2 atmospheres). Since the common opening and closing valve 13 and the individual opening and closing valve 14 are closed without releasing the pressure inside the grooves 9, 10, and 11, the pressure inside the grooves 9, 10, and 11 is maintained after the valves 13 and 14 are closed. The state of high pressure.
由於持續利用高壓之加壓氣體進行壓送,因此大量的氣體(氮氣等之惰性氣體)便會溶入槽等9、10、11內部之有機溶劑中。除此之外,亦存在配管10、11外之環境氣體(例如氧)會穿透由PFA所構成之配管10、11之管壁,而溶入以液密狀態存在於配管10、11內部之有機溶劑中之可能性。藉由「氣體對液體之溶解度與其壓力成比例」 之亨利定律(Henry's law),處於高壓狀態之配管10、11之內部,亦存在環境氣體(例如氧)大量地溶入有機溶劑之可能性。其結果,存在有被吐出至基板W之有機溶劑所包含之氣泡量增多之可能性。 Since the pressure is continuously supplied by the pressurized gas of a high pressure, a large amount of gas (an inert gas such as nitrogen) is dissolved in the organic solvent inside the tanks 9, 10, and 11. In addition, the ambient gas (for example, oxygen) outside the pipes 10 and 11 penetrates the pipe wall of the pipes 10 and 11 made of PFA, and the solution is present in the liquid-tight state inside the pipes 10 and 11. The possibility in organic solvents. By "the solubility of gas to liquid is proportional to its pressure" Henry's law, inside the pipes 10, 11 under high pressure, there is also the possibility that a large amount of ambient gas (for example, oxygen) is dissolved in the organic solvent. As a result, there is a possibility that the amount of bubbles contained in the organic solvent discharged to the substrate W increases.
又,因為於閥13、14之關閉以後,槽等9、10、11內部之壓力仍被保持為高壓之狀態,因此在處理單元2中進行有機溶劑之再吐出時,若有機溶劑閥25為了自有機溶劑噴嘴8吐出有機溶劑而被打開,則一直被保持為高壓之有機溶劑(尤其有機溶劑共通配管11內部之有機溶劑)便會急速減壓,而存在溶存於其內部之氣體成為氣泡,而導致大量發泡之可能性。 Further, since the pressure inside the grooves 9, 10, and 11 is maintained at a high pressure after the valves 13 and 14 are closed, when the organic solvent is re-discharged in the processing unit 2, the organic solvent valve 25 is When the organic solvent is discharged from the organic solvent nozzle 8 and the organic solvent is kept at a high pressure (especially, the organic solvent in the organic solvent common pipe 11), the gas is rapidly decompressed, and the gas dissolved in the inside becomes a bubble. The possibility of a large amount of foaming.
相對於此,根據該實施形態,於處理液自有機溶劑供給裝置3朝向處理單元2之供給停止時,第3控制裝置106便於共通開閉閥13及個別開閉閥14之關閉之前,打開大氣連通配管17,使處於加壓狀態之有機溶劑槽9之內部逐漸地大氣開放,並於有機溶劑槽9內部之壓力下降至大氣壓之後,關閉共通開閉閥13及個別開閉閥14。因此,於閥13、14之關閉以後,有機溶劑槽9之內部、有機溶劑個別配管10之內部及有機溶劑共通配管11之內部,便被維持為大氣壓。 On the other hand, according to the embodiment, when the supply of the processing liquid from the organic solvent supply device 3 to the processing unit 2 is stopped, the third control device 106 opens the atmosphere communication pipe before the closing of the common opening and closing valve 13 and the individual opening and closing valve 14 is facilitated. 17. The inside of the organic solvent tank 9 in a pressurized state is gradually opened to the atmosphere, and after the pressure inside the organic solvent tank 9 is lowered to the atmospheric pressure, the common opening and closing valve 13 and the individual opening and closing valve 14 are closed. Therefore, after the valves 13 and 14 are closed, the inside of the organic solvent tank 9, the inside of the organic solvent individual pipe 10, and the inside of the organic solvent common pipe 11 are maintained at atmospheric pressure.
溶入大氣壓之液體的氣體量較少。因此,可減低溶入有機溶劑槽9之內部、有機溶劑個別配管10之內部及有機溶劑共通配管11之內部的有機溶劑之溶存氣體量。因為溶入有機溶劑之溶存氣體量較少,所以可減低有機溶劑中所產生之氣泡量。 The amount of gas dissolved in the liquid at atmospheric pressure is small. Therefore, the amount of dissolved gas in the organic solvent dissolved in the inside of the organic solvent tank 9, the inside of the organic solvent individual pipe 10, and the organic solvent common pipe 11 can be reduced. Since the amount of dissolved gas dissolved in the organic solvent is small, the amount of bubbles generated in the organic solvent can be reduced.
又,在處理單元2進行有機溶劑之再吐出時,有機溶劑個別配管10之內部及有機溶劑共通配管11之內部被保持為加壓狀態,有機溶劑閥25在該狀態下被打開。於該再吐出時,伴隨著有機溶劑閥25之開啟,在配管10、11內部雖會發生減壓,但由於溶入配管 10、11內部之有機溶劑之溶存氣體量較少,因此可減低伴隨著減壓而於有機溶劑中產生之氣泡量。 When the processing unit 2 re-discharges the organic solvent, the inside of the organic solvent individual pipe 10 and the inside of the organic solvent common pipe 11 are maintained in a pressurized state, and the organic solvent valve 25 is opened in this state. At the time of this re-discharging, the pressure of the inside of the pipes 10 and 11 is decompressed with the opening of the organic solvent valve 25, but the pipe is dissolved. Since the amount of dissolved gas in the organic solvent inside 10 and 11 is small, the amount of bubbles generated in the organic solvent accompanying the pressure reduction can be reduced.
又,由於逐漸地進行有機溶劑槽9內部之大氣開放,因此亦可抑制或防止溶入有機溶劑之氣體,在該減壓過程中成為氣泡而出現之情形。 Further, since the atmosphere inside the organic solvent tank 9 is gradually opened, it is possible to suppress or prevent the gas dissolved in the organic solvent, and it may become a bubble during the depressurization.
藉此,可減低自有機溶劑供給裝置3供給至處理單元2之有機溶劑所包含之氣泡量。 Thereby, the amount of bubbles contained in the organic solvent supplied from the organic solvent supply device 3 to the processing unit 2 can be reduced.
以上,雖已對本發明一實施形態進行說明,但本發明亦可以其他形態實施。 Although an embodiment of the present invention has been described above, the present invention may be embodied in other forms.
例如,在前述之實施形態中,雖根據壓力計16之測量值來判斷有機溶劑槽9內部之壓力下降至大氣壓,但亦可藉由壓力計16之測量值檢測有機溶劑槽9內部之壓力下降至既定壓力,且藉由自該檢測後經過既定時間,來判斷有機溶劑槽9內部之壓力下降至大氣壓。 For example, in the above-described embodiment, the pressure inside the organic solvent tank 9 is lowered to the atmospheric pressure based on the measured value of the pressure gauge 16, but the pressure drop inside the organic solvent tank 9 can be detected by the measured value of the pressure gauge 16. The pressure inside the organic solvent tank 9 is lowered to atmospheric pressure by a predetermined pressure and by a predetermined time from the detection.
又,雖已說明設為在有機溶劑槽9內部之壓力下降至大氣壓後關閉共通開閉閥13及個別開閉閥14,但只要在大氣開放開始後,亦可設為在下降至大氣壓前的時間點關閉共通開閉閥13及個別開閉閥14。 In addition, although the common on-off valve 13 and the individual on-off valve 14 are closed after the pressure inside the organic solvent tank 9 is lowered to the atmospheric pressure, the time may be set to be before the atmospheric pressure is started. The common opening and closing valve 13 and the individual opening and closing valve 14 are closed.
又,雖已說明設為固定孔口19與大氣開閉閥18分別地被介設於大氣連通配管17,但孔口亦可被設置於大氣開閉閥18本身。亦即,亦可設置附有孔口之閥來作為大氣開閉閥18。 In addition, it has been described that the fixed orifice 19 and the atmosphere opening and closing valve 18 are respectively disposed in the atmosphere communication pipe 17, but the orifice may be provided in the atmosphere opening and closing valve 18 itself. That is, a valve with an orifice may be provided as the atmosphere opening and closing valve 18.
又,亦可如圖9所示,取代固定孔口19而設置用以調整大氣連通配管17之開度之開度調整單元218。開度調整單元218既可為如圖9所示之流量調整閥,亦可為可變孔口(流量調整孔口)。 Further, as shown in FIG. 9, instead of the fixing orifice 19, an opening degree adjusting unit 218 for adjusting the opening degree of the atmosphere communication pipe 17 may be provided. The opening adjustment unit 218 may be a flow adjustment valve as shown in FIG. 9 or a variable orifice (flow adjustment orifice).
雖未圖示,但流量調整閥包含有:閥身,於其內部設置有閥座;閥體,其對閥座進行開閉;及致動器,其使閥體在開位置與閉位置之間移動。作為致動器,可採用電動馬達或汽缸等。又,作為流量調整閥,可採用針閥(needle valve)、膜片閥(diaphragm valve)、蝶形閥(butterfly valve)等各種形式。 Although not shown, the flow regulating valve includes a valve body in which a valve seat is provided, a valve body that opens and closes the valve seat, and an actuator that causes the valve body to be between an open position and a closed position. mobile. As the actuator, an electric motor, a cylinder, or the like can be employed. Further, as the flow rate adjusting valve, various forms such as a needle valve, a diaphragm valve, and a butterfly valve may be employed.
又,該開度調整單元218亦可與大氣開閉閥18合併使用,於該開度調整單元218具有開閉功能之情形時,亦可廢除大氣開閉閥18。 Further, the opening degree adjusting unit 218 may be used in combination with the atmosphere opening and closing valve 18. When the opening degree adjusting unit 218 has an opening and closing function, the atmosphere opening and closing valve 18 may be abolished.
又,亦可不設置固定孔口19或開度調整單元218。於該情形時,第2控制裝置6亦可藉由將大氣開閉閥18之開放速度設為低速,而實現使有機溶劑槽9之內部逐漸地大氣開放。 Further, the fixing opening 19 or the opening degree adjusting unit 218 may not be provided. In this case, the second control device 6 can also gradually open the inside of the organic solvent tank 9 by setting the opening speed of the atmospheric opening and closing valve 18 to a low speed.
又,用以調整有機溶劑槽9內部之壓力之壓力調整單元,不需設置於大氣連通配管17。壓力調整單元例如亦可直接設置於有機溶劑槽9。 Further, the pressure adjusting means for adjusting the pressure inside the organic solvent tank 9 does not need to be provided in the atmosphere communication pipe 17. The pressure adjustment unit can also be disposed directly in the organic solvent tank 9, for example.
又,在前述之實施形態中,雖已列舉有機溶劑供給裝置3具備有複數個有機溶劑槽9之情形為例而進行說明,但有機溶劑供給裝置3亦可僅具備1個有機溶劑槽9。於該情形時,由於不需切換供給來源之有機溶劑槽,因此可廢除有機溶劑個別配管10及個別開閉閥14。 In the above-described embodiment, the organic solvent supply device 3 is described as an example in which a plurality of organic solvent tanks 9 are provided. However, the organic solvent supply device 3 may include only one organic solvent tank 9. In this case, since the organic solvent tank of the supply source is not required to be switched, the organic solvent individual pipe 10 and the individual opening and closing valve 14 can be abolished.
又,亦可為有機溶劑供給裝置3不僅包含用以供給有機溶劑之機構,還包含用以供給其他藥液之機構的構成。亦即,亦可為與其他藥液供給裝置共通化之構成。 Further, the organic solvent supply device 3 may include not only a mechanism for supplying an organic solvent but also a mechanism for supplying another chemical liquid. In other words, it may be configured to be common to other chemical supply devices.
又,在前述之實施形態中,雖已列舉IPA作為自有機溶劑供給裝置3所供給之有機溶劑為例進行說明,但除了IPA以外,還 可採用甲醇、乙醇、丙酮、氫氟醚(HEF,Hydro Fluoro Ether)及乙二醇(EG,Ethylene Glycol)等之有機溶劑。 In addition, in the above-described embodiment, IPA is described as an organic solvent supplied from the organic solvent supply device 3, but in addition to IPA, An organic solvent such as methanol, ethanol, acetone, hydrofluoroether (HEF, Hydro Fluoro Ether) or ethylene glycol (EG, Ethylene Glycol) may be used.
又,在前述之說明中,雖已說明設為處理單元2及有機溶劑供給裝置3相互獨立之單元,但處理單元2及有機溶劑供給裝置3亦可為共通之裝置的一部分。亦即,基板處理系統亦可具備包含處理單元2及有機溶劑供給裝置3之基板處理裝置。於該情形時,亦可使用將第1及第2控制裝置5、6整合後之控制裝置。 Further, in the above description, the unit in which the processing unit 2 and the organic solvent supply device 3 are independent of each other has been described. However, the processing unit 2 and the organic solvent supply device 3 may be a part of a common device. That is, the substrate processing system may include a substrate processing apparatus including the processing unit 2 and the organic solvent supply device 3. In this case, a control device in which the first and second control devices 5 and 6 are integrated may be used.
又,雖已列舉供給有機溶劑之有機溶劑供給裝置3為例來說明處理液供給裝置,但處理液供給裝置並不限定於供給有機溶劑者,亦可為供給藥液或沖洗液等者。 In addition, the organic solvent supply device 3 that supplies an organic solvent is exemplified to describe the treatment liquid supply device. However, the treatment liquid supply device is not limited to the case where the organic solvent is supplied, and the chemical solution or the rinse solution may be supplied.
又,在前述之實施形態中,雖已提出半導體晶圓來作為處理對象之基板W,但並不限定於半導體晶圓,亦可將例如液晶顯示裝置用玻璃基板、電漿顯示器用基板、FED用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板等其他種類之基板作為處理對象。 Further, in the above-described embodiment, the semiconductor wafer is proposed as the substrate W to be processed, but the semiconductor wafer is not limited thereto, and for example, a glass substrate for a liquid crystal display device, a substrate for a plasma display panel, or a FED may be used. Other types of substrates such as a substrate, a substrate for a disk, a substrate for a magnetic disk, a substrate for a magnetic disk, a substrate for a mask, a ceramic substrate, and a substrate for a solar cell are used as processing targets.
雖已對本發明之實施形態詳細地進行說明,但該等僅為用於使本發明之技術性內容明確化之具體例,本發明不應限定於該等具體例而進行解釋,本發明之範圍僅由隨附之申請專利範圍所限定。 The embodiments of the present invention have been described in detail, but these are only specific examples for clarifying the technical contents of the present invention, and the present invention is not limited to the specific examples, and the scope of the present invention is It is only limited by the scope of the attached patent application.
本申請案係對應於2015年9月28日對日本專利廳所提出之日本專利特願2015-189918號,該申請案之全部揭示係藉由引用而併入至本文中。 The present application is directed to Japanese Patent Application No. 2015-189918, the entire disclosure of which is hereby incorporated by reference.
1‧‧‧基板處理系統 1‧‧‧Substrate processing system
2‧‧‧處理單元 2‧‧‧Processing unit
3‧‧‧有機溶劑供給裝置 3‧‧‧Organic solvent supply device
4‧‧‧基板處理裝置 4‧‧‧Substrate processing device
5‧‧‧第1控制裝置 5‧‧‧1st control device
6‧‧‧第2控制裝置 6‧‧‧2nd control device
7‧‧‧處理腔室 7‧‧‧Processing chamber
8‧‧‧有機溶劑噴嘴 8‧‧‧Organic solvent nozzle
9‧‧‧有機溶劑槽 9‧‧‧Organic solvent tank
10‧‧‧有機溶劑個別配管 10‧‧‧Individual solvent individual piping
11‧‧‧有機溶劑共通配管 11‧‧‧Organic solvent common piping
12‧‧‧流量計 12‧‧‧ Flowmeter
13‧‧‧共通開閉閥 13‧‧‧Common opening and closing valve
14‧‧‧個別開閉閥 14‧‧‧Individual opening and closing valves
15‧‧‧加壓單元 15‧‧‧ Pressurizing unit
16‧‧‧壓力計 16‧‧‧ pressure gauge
17‧‧‧大氣連通配管 17‧‧‧Atmospheric communication piping
18‧‧‧大氣開閉閥 18‧‧‧Atmospheric opening and closing valve
19‧‧‧固定孔口 19‧‧‧Fixed orifice
20‧‧‧加壓氣體配管 20‧‧‧ Pressurized gas piping
21‧‧‧加壓閥 21‧‧‧Pressure valve
22‧‧‧處理側配管 22‧‧‧Processing side piping
23‧‧‧處理側共通配管 23‧‧‧Processing side common piping
24‧‧‧處理側分支配管 24‧‧‧Processing side branch piping
25‧‧‧有機溶劑閥 25‧‧‧Organic Solvent Valve
Claims (12)
Applications Claiming Priority (2)
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JP2015189918A JP6667241B2 (en) | 2015-09-28 | 2015-09-28 | Processing liquid supply device, substrate processing system and processing liquid supply method |
JP2015-189918 | 2015-09-28 |
Publications (2)
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TW201714204A true TW201714204A (en) | 2017-04-16 |
TWI644344B TWI644344B (en) | 2018-12-11 |
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TW105126375A TWI644344B (en) | 2015-09-28 | 2016-08-18 | Processing liquid supply device, substrate processing system, and processing liquid supply method |
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JP (1) | JP6667241B2 (en) |
KR (1) | KR102184477B1 (en) |
CN (1) | CN108025335B (en) |
TW (1) | TWI644344B (en) |
WO (1) | WO2017056617A1 (en) |
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US11077461B2 (en) * | 2017-06-15 | 2021-08-03 | The Boeing Company | Apparatus and methods for use in applying a fluid to a surface |
JP7267088B2 (en) * | 2019-05-10 | 2023-05-01 | 東京エレクトロン株式会社 | Tanks, substrate processing equipment, and methods of using tanks |
CN110197801A (en) * | 2019-05-14 | 2019-09-03 | 清华大学 | A kind of storage device and substrate equipment for after-treatment of processing substrate liquid |
CN110429046B (en) * | 2019-06-19 | 2024-12-27 | 清华大学 | Fluid supply device for substrate drying and substrate drying equipment |
CN110531794A (en) * | 2019-08-30 | 2019-12-03 | 北京北方华创微电子装备有限公司 | Fluid pressure control device and method, cleaning solution supplying mechanism |
KR102548294B1 (en) * | 2020-04-24 | 2023-06-28 | 세메스 주식회사 | Unit for supplying liquid, apparatus for treating substrate and method for treating substrate |
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JP2000021703A (en) * | 1998-07-02 | 2000-01-21 | Dainippon Screen Mfg Co Ltd | Method and device for supplying processing liquid |
JP3764280B2 (en) * | 1998-09-22 | 2006-04-05 | シーケーディ株式会社 | Chemical supply system |
JP2000173902A (en) * | 1998-12-08 | 2000-06-23 | Dainippon Screen Mfg Co Ltd | Substrate treatment system |
JP2004273984A (en) * | 2003-03-12 | 2004-09-30 | Dainippon Screen Mfg Co Ltd | Method and device for substrate processing |
JP4421956B2 (en) * | 2003-07-18 | 2010-02-24 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and processing method |
JP2005040670A (en) * | 2003-07-24 | 2005-02-17 | Shibaura Mechatronics Corp | Coating device |
JP4553256B2 (en) * | 2005-06-24 | 2010-09-29 | 東京エレクトロン株式会社 | Substrate processing system and control method thereof |
JP5854668B2 (en) * | 2011-07-07 | 2016-02-09 | 芝浦メカトロニクス株式会社 | Gas-liquid mixed fluid generating apparatus, gas-liquid mixed fluid generating method, processing apparatus, and processing method |
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2015
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2016
- 2016-07-05 CN CN201680052890.8A patent/CN108025335B/en active Active
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- 2016-07-05 WO PCT/JP2016/069933 patent/WO2017056617A1/en active Application Filing
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TWI644344B (en) | 2018-12-11 |
JP2017064582A (en) | 2017-04-06 |
KR102184477B1 (en) | 2020-11-30 |
JP6667241B2 (en) | 2020-03-18 |
CN108025335B (en) | 2021-03-19 |
WO2017056617A1 (en) | 2017-04-06 |
KR20180031781A (en) | 2018-03-28 |
CN108025335A (en) | 2018-05-11 |
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