TW201608741A - Illuminating device - Google Patents
Illuminating device Download PDFInfo
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- TW201608741A TW201608741A TW104117514A TW104117514A TW201608741A TW 201608741 A TW201608741 A TW 201608741A TW 104117514 A TW104117514 A TW 104117514A TW 104117514 A TW104117514 A TW 104117514A TW 201608741 A TW201608741 A TW 201608741A
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- light
- emitting
- light source
- emitting portion
- emitting device
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- 239000002096 quantum dot Substances 0.000 claims abstract description 49
- 230000005284 excitation Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 30
- 239000002612 dispersion medium Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- 239000011347 resin Substances 0.000 description 33
- 229920005989 resin Polymers 0.000 description 33
- 239000002245 particle Substances 0.000 description 13
- 230000006866 deterioration Effects 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
本發明提供一種不易熱劣化之發光裝置。 發光裝置1具備發光部30及光源20。發光部30包含量子點。光源20對發光部30出射量子點之激發波長之光。光源20之中,與發光部30為相反側之部分20a之發光強度高於發光部側20b之部分之發光強度。 The present invention provides a light-emitting device that is less susceptible to thermal degradation. The light-emitting device 1 includes a light-emitting unit 30 and a light source 20 . The light emitting unit 30 includes quantum dots. The light source 20 emits light of an excitation wavelength of the quantum dot to the light-emitting portion 30. Among the light sources 20, the light-emitting intensity of the portion 20a opposite to the light-emitting portion 30 is higher than the light-emitting intensity of the portion of the light-emitting portion side 20b.
Description
本發明係關於一種發光裝置。 The present invention relates to a light emitting device.
近年來,使用發光二極體之發光裝置之進步顯著,而被用於液晶之背光源、大型顯示器等。尤其,藉由短波長光之發光元件之半導體材料之發展,而逐漸能夠獲得短波長之光,因此,可使用該短波長之光激發螢光體而獲得更多種波長之光。 In recent years, the improvement of the light-emitting device using the light-emitting diode has been remarkable, and it has been used for a backlight of a liquid crystal, a large display, or the like. In particular, since the short-wavelength light is gradually obtained by the development of the semiconductor material of the light-emitting element of short-wavelength light, the short-wavelength light can be used to excite the phosphor to obtain more wavelengths of light.
自先前以來,便已知有使用量子點之發光裝置。例如,於專利文獻1中,揭示有一種發光裝置,其具備藍色LED(light emitting diode,發光二極體)與密封藍色LED之密封部,且密封部由包含量子點之樹脂組合物所構成。 Light-emitting devices using quantum dots have been known since the prior art. For example, Patent Document 1 discloses a light-emitting device including a blue LED (light emitting diode) and a sealing portion for sealing a blue LED, and the sealing portion is made of a resin composition containing quantum dots. Composition.
[專利文獻1]日本專利特開2010-126596號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-126596
然而,專利文獻1中所揭示之發光裝置的藍色LED之發光面與包含易因熱而劣化之量子點之密封部接觸。又,藍色LED與配置有電極之基板經由接合線而連接。因此,存在如下問題:因藍色LED發光時產生之熱,而使與藍色LED之發光面或接合線接觸之密封部之量子點劣化,從而導致發光強度等降低。 However, the light-emitting surface of the blue LED of the light-emitting device disclosed in Patent Document 1 is in contact with a sealing portion including quantum dots which are easily deteriorated by heat. Further, the blue LED and the substrate on which the electrodes are arranged are connected via a bonding wire. Therefore, there is a problem in that the quantum dots of the sealing portion which is in contact with the light-emitting surface or the bonding wire of the blue LED are deteriorated by the heat generated when the blue LED emits light, and the luminous intensity and the like are lowered.
本發明之主要目的在於提供一種不易熱劣化之發光裝置。 SUMMARY OF THE INVENTION A primary object of the present invention is to provide a light-emitting device that is less susceptible to thermal degradation.
本發明之發光裝置具備包含量子點之發光部、及對發光部出射量子點之激發波長之光之光源,光源之中,與發光部為相反側之部分之發光強度高於發光部側之部分之發光強度。 A light-emitting device according to the present invention includes a light-emitting portion including a quantum dot and a light source that emits light of an excitation wavelength of the quantum dot to the light-emitting portion. Among the light sources, a portion of the light-emitting portion opposite to the light-emitting portion has a higher light-emitting intensity than a portion on the light-emitting portion side. Luminous intensity.
本發明之發光裝置亦可進而具備安裝基板,該安裝基板位於相對於光源與發光部相反之側且安裝有光源,光源覆晶(flip chip)安裝於安裝基板。 The light-emitting device of the present invention may further include a mounting substrate that is disposed on a side opposite to the light source and the light-emitting portion and that has a light source mounted thereon, and the light source is flip-chip mounted on the mounting substrate.
本發明之發光裝置亦可為,發光部與光源隔開設置。 In the light-emitting device of the present invention, the light-emitting portion may be spaced apart from the light source.
本發明之發光裝置亦可進而具備安裝基板,該安裝基板位於相對於光源與發光部相反之側且安裝有光源,安裝基板具有收容有上述光源及上述發光部之凹部,該發光裝置進而具備蓋住凹部之蓋構件,發光部設置於成為裝置之凹部側之蓋構件之表面之上。 The light-emitting device of the present invention may further include a mounting substrate on a side opposite to the light source and the light-emitting portion and having a light source mounted thereon, the mounting substrate having a concave portion in which the light source and the light-emitting portion are housed, and the light-emitting device further includes a cover The cover member of the recessed portion is provided on the surface of the cover member which is the recessed portion of the device.
本發明之發光裝置亦可進而具備配置於光源之上方且密封發光部之單元。 The light-emitting device of the present invention may further include a unit that is disposed above the light source and that seals the light-emitting portion.
本發明之發光裝置亦可為,光源由LED元件所構成。 In the light-emitting device of the present invention, the light source may be composed of an LED element.
本發明之發光裝置亦可進而具備安裝基板,該安裝基板位於相對於光源與發光部相反之側且安裝有光源,發光部進而包含量子點之分散介質,分散介質之熱導率低於安裝基板之熱導率。 The light-emitting device of the present invention may further include a mounting substrate on a side opposite to the light source and the light-emitting portion and having a light source mounted thereon, the light-emitting portion further including a dispersion medium of quantum dots, and the thermal conductivity of the dispersion medium is lower than the mounting substrate Thermal conductivity.
根據本發明,可提供一種不易熱劣化之發光裝置。 According to the present invention, it is possible to provide a light-emitting device which is less susceptible to thermal deterioration.
1‧‧‧發光裝置 1‧‧‧Lighting device
1a‧‧‧發光裝置 1a‧‧‧Lighting device
1b‧‧‧發光裝置 1b‧‧‧Lighting device
1c‧‧‧發光裝置 1c‧‧‧Lighting device
10‧‧‧安裝基板 10‧‧‧Installation substrate
11‧‧‧第1構件 11‧‧‧1st component
11a、11b‧‧‧焊墊 11a, 11b‧‧‧ pads
11c、11d‧‧‧通孔電極 11c, 11d‧‧‧through hole electrodes
11e、11f‧‧‧端子電極 11e, 11f‧‧‧ terminal electrodes
12‧‧‧第2構件 12‧‧‧2nd component
12a‧‧‧貫通孔 12a‧‧‧through hole
13‧‧‧凹部 13‧‧‧ recess
13a‧‧‧側壁 13a‧‧‧ Sidewall
13b‧‧‧底壁 13b‧‧‧ bottom wall
20‧‧‧光源 20‧‧‧Light source
20a‧‧‧部分 Section 20a‧‧‧
20b‧‧‧部分 Section 20b‧‧‧
30‧‧‧發光部 30‧‧‧Lighting Department
40‧‧‧蓋構件 40‧‧‧covering components
40a‧‧‧內部空間 40a‧‧‧Internal space
50‧‧‧密封空間 50‧‧‧ sealed space
60‧‧‧單元 60‧‧‧ unit
70‧‧‧樹脂 70‧‧‧Resin
圖1係第1實施形態之發光裝置之模式性剖視圖。 Fig. 1 is a schematic cross-sectional view showing a light-emitting device of a first embodiment.
圖2係第2實施形態之發光裝置之模式性剖視圖。 Fig. 2 is a schematic cross-sectional view showing a light-emitting device of a second embodiment.
圖3係第3實施形態之發光裝置之模式性剖視圖。 Fig. 3 is a schematic cross-sectional view showing a light-emitting device of a third embodiment.
圖4係第4實施形態之發光裝置之模式性剖視圖。 Fig. 4 is a schematic cross-sectional view showing a light-emitting device of a fourth embodiment.
以下,對實施本發明之較佳形態進行說明。但,下述之實施形態僅為例示。本發明並不受下述之實施形態任何限定。 Hereinafter, preferred embodiments for carrying out the invention will be described. However, the following embodiments are merely illustrative. The present invention is not limited by the following embodiments.
又,於在實施形態等中所參照之各圖式中,具有實質上同一功能之構件參照同一符號。又,於實施形態等中所參照之圖式係模式性地記載者。圖式中所描繪之物體之尺寸之比率等存在與實物之尺寸之比率等不同之情形。於圖式相互間,亦存在物體之尺寸比率等不同之情形。具體之物體之尺寸比率等應可參酌以下之說明而判斷。 In the drawings, which are referred to in the embodiments and the like, members having substantially the same functions are referred to by the same reference numerals. Moreover, the drawings referred to in the embodiments and the like are schematically described. The ratio of the size of the object depicted in the drawing and the like may be different from the ratio of the size of the object. In the case of patterns, there are also cases where the size ratio of the objects is different. The specific size ratio of the object should be judged by the following instructions.
(第1實施形態) (First embodiment)
圖1係第1實施形態之發光裝置1之模式性剖視圖。 Fig. 1 is a schematic cross-sectional view of a light-emitting device 1 according to a first embodiment.
發光裝置1係當激發光入射時出射與激發光不同之波長之光之裝置。發光裝置1亦可為出射激發光與藉由激發光之照射而產生之光之混合光者。 The light-emitting device 1 is a device that emits light of a wavelength different from that of the excitation light when the excitation light is incident. The light-emitting device 1 may also be a mixed light that emits excitation light and light generated by irradiation of excitation light.
發光裝置1具有安裝基板10。安裝基板10具有成為基材之第1構件11、及成為框材之第2構件12。第2構件12設置於第1構件11之上。於第2構件12,設置有開口至第1構件11之貫通孔12a。藉由該貫通孔12a而構成凹部13。再者,貫通孔12a係朝向第1構件11側前端變細。因此,凹部13之側壁13a相對於第1構件11之主面傾斜。 The light emitting device 1 has a mounting substrate 10. The mounting substrate 10 has a first member 11 that serves as a substrate and a second member 12 that serves as a frame member. The second member 12 is provided on the first member 11. The second member 12 is provided with a through hole 12a that opens to the first member 11. The concave portion 13 is configured by the through hole 12a. Further, the through hole 12a is tapered toward the tip end of the first member 11 side. Therefore, the side wall 13a of the recessed portion 13 is inclined with respect to the main surface of the first member 11.
安裝基板10可由任意材料構成。安裝基板10例如可由低溫共燒陶瓷等陶瓷、金屬、樹脂、玻璃等構成。構成第1構件11之材料與構成第2構件12之材料既可相同,亦可不同。於構成第1構件11之材料與構成第2構件12之材料相同之情形時,熱膨脹係數相同,故可抑制因發光時產生之熱所導致之第1構件11與第2構件12的剝離。 The mounting substrate 10 can be constructed of any material. The mounting substrate 10 can be made of, for example, ceramic such as low-temperature co-fired ceramic, metal, resin, glass, or the like. The material constituting the first member 11 and the material constituting the second member 12 may be the same or different. When the material constituting the first member 11 is the same as the material constituting the second member 12, since the coefficient of thermal expansion is the same, peeling of the first member 11 and the second member 12 due to heat generated during light emission can be suppressed.
於安裝基板10之第1構件11之一面之上,設置有焊墊11a、11b。焊墊11a、11b係藉由通孔電極11c、11d而與設置於第1構件11之另一面之上的端子電極11e、11f連接。 Solder pads 11a and 11b are provided on one surface of the first member 11 of the mounting substrate 10. The pads 11a and 11b are connected to the terminal electrodes 11e and 11f provided on the other surface of the first member 11 by the via electrodes 11c and 11d.
於安裝基板10之凹部13之底壁13b之上,配置有光源20。光源20覆晶安裝於安裝基板10之第1構件11。此處,所謂「覆晶安裝」係指在設置於安裝基板之安裝面上之焊墊(凸塊)之上配置電子零件,將電子零件之電極與焊墊藉由焊料等導電材而接合,藉此安裝電子零件。具體而言,本實施形態中,光源20位於焊墊11a、11b之上。光源20之電極係經由焊料等導電材而與焊墊11a、11b接合。 A light source 20 is disposed on the bottom wall 13b of the recess 13 of the mounting substrate 10. The light source 20 is flip-chip mounted on the first member 11 of the mounting substrate 10. Here, the "flip-chip mounting" means that an electronic component is placed on a bonding pad (bump) provided on a mounting surface of a mounting substrate, and an electrode of the electronic component and the pad are joined by a conductive material such as solder. This allows you to install electronic parts. Specifically, in the present embodiment, the light source 20 is placed on the pads 11a and 11b. The electrode of the light source 20 is bonded to the pads 11a and 11b via a conductive material such as solder.
光源20例如可由LED(Light Emitting Diode)元件、LD(Laser Diode,雷射二極體)元件等構成。本實施形態中,對光源20由LED元件構成之例進行說明。 The light source 20 can be configured by, for example, an LED (Light Emitting Diode) element, an LD (Laser Diode) element, or the like. In the present embodiment, an example in which the light source 20 is constituted by an LED element will be described.
於凹部13內,配置有發光部30。發光部30與光源20收容於凹部13內。亦即,發光部30係於凹部13內以供來自光源20之光入射之方式配置。具體而言,發光部30係於光源20之上以蓋住光源20之方式配置。 The light emitting unit 30 is disposed in the recess 13 . The light emitting unit 30 and the light source 20 are housed in the recess 13 . That is, the light-emitting portion 30 is disposed in the concave portion 13 so that light from the light source 20 is incident. Specifically, the light-emitting portion 30 is disposed on the light source 20 so as to cover the light source 20 .
發光部30包含量子點。發光部30既可包含1種量子點,亦可包含複數種量子點。藉由含有複數種量子點,可使轉換光之色調具有一定範圍。 The light emitting unit 30 includes quantum dots. The light-emitting portion 30 may include one type of quantum dot or a plurality of quantum dots. By containing a plurality of quantum dots, the color tone of the converted light can be made to have a certain range.
量子點係當量子點之激發光入射時出射與激發光不同之波長之光。自量子點出射之光之波長依存於量子點之粒徑。即,可藉由使量子點之粒徑變化而調整所獲得之光之波長。因此,量子點之粒徑係設為與欲獲得之光之波長相應之粒徑。量子點之粒徑通常為2nm~10nm左右。 The quantum dot system emits light of a wavelength different from the excitation light when the excitation light of the equivalent sub-point is incident. The wavelength of the light emerging from the quantum dots depends on the particle size of the quantum dots. That is, the wavelength of the obtained light can be adjusted by changing the particle diameter of the quantum dot. Therefore, the particle diameter of the quantum dot is set to a particle diameter corresponding to the wavelength of the light to be obtained. The particle size of the quantum dots is usually about 2 nm to 10 nm.
例如,作為若照射波長300nm~440nm之紫外~近紫外之激發光則發出藍色之可見光(波長440nm~480nm之螢光)之量子點之具體例,可列舉粒徑為2.0nm~3.0nm左右之CdSe/ZnS之微晶等。作為若照射波長300nm~440nm之紫外~近紫外之激發光及波長440nm~480nm之藍色之激發光則發出綠色之可見光(波長為500nm~540nm 之螢光)之量子點之具體例,可列舉粒徑為3.0nm~3.3nm左右之CdSe/ZnS之微晶等。作為若照射波長300nm~440nm之紫外~近紫外之激發光及波長440nm~480nm之藍色之激發光則發出黃色之可見光(波長為540nm~595nm之螢光)之量子點之具體例,可列舉粒徑為3.3nm~4.5nm左右之CdSe/ZnS之微晶等。作為若照射波長300nm~440nm之紫外~近紫外之激發光及波長440nm~480nm之藍色之激發光則發出紅色之可見光(波長為600nm~700nm之螢光)之量子點之具體例,可列舉粒徑為4.5nm~10nm左右之CdSe/ZnS之微晶等。 For example, a specific example of a quantum dot which emits blue visible light (fluorescence of a wavelength of 440 nm to 480 nm) when irradiated with ultraviolet to near-ultraviolet excitation light having a wavelength of 300 nm to 440 nm is exemplified by a particle diameter of about 2.0 nm to 3.0 nm. Crystallites of CdSe/ZnS, etc. As the excitation light of ultraviolet to near-ultraviolet light having a wavelength of 300 nm to 440 nm and the blue excitation light having a wavelength of 440 nm to 480 nm, green visible light is emitted (wavelength is 500 nm to 540 nm). Specific examples of the quantum dots of the fluorescent light include crystallites of CdSe/ZnS having a particle diameter of about 3.0 nm to 3.3 nm. Specific examples of quantum dots that emit yellow visible light (fluorescence with a wavelength of 540 nm to 595 nm) when irradiated with excitation light of ultraviolet to near ultraviolet light having a wavelength of 300 nm to 440 nm and blue light having a wavelength of 440 nm to 480 nm are exemplified. The crystallites of CdSe/ZnS having a diameter of about 3.3 nm to 4.5 nm are used. Specific examples of quantum dots that emit red visible light (fluorescence with a wavelength of 600 nm to 700 nm) when irradiated with excitation light of ultraviolet to near ultraviolet light having a wavelength of 300 nm to 440 nm and blue light having a wavelength of 440 nm to 480 nm are exemplified. The crystallites of CdSe/ZnS having a diameter of about 4.5 nm to 10 nm are used.
發光部30包含使量子點分散之分散介質。分散介質只要為能夠使量子點較佳地分散者,則無特別限定。分散介質例如可為樹脂等固體,亦可為液體。本實施形態中,對分散介質為樹脂之例進行說明。作為較佳地使用之樹脂之具體例,例如可列舉聚矽氧樹脂、環氧樹脂、丙烯酸系樹脂等。 The light-emitting portion 30 includes a dispersion medium that disperses quantum dots. The dispersion medium is not particularly limited as long as it can disperse the quantum dots. The dispersion medium may be, for example, a solid such as a resin, or may be a liquid. In the present embodiment, an example in which the dispersion medium is a resin will be described. Specific examples of the resin to be preferably used include, for example, a polyoxyxylene resin, an epoxy resin, and an acrylic resin.
發光部30除包含樹脂與量子點以外,亦可進而包含例如光分散劑等。作為較佳地使用之光散射劑之具體例,例如可列舉氧化鋁粒子、二氧化鈦粒子、氧化矽粒子等高反射無機化合物粒子及高反射白色樹脂粒子等。如此,藉由使發光部30含有光散射劑,可減小發光部11中之發光強度之面內不均。 The light-emitting portion 30 may further contain, for example, a light dispersant or the like in addition to the resin and the quantum dot. Specific examples of the light-scattering agent to be used preferably include highly-reflecting inorganic compound particles such as alumina particles, titania particles, and cerium oxide particles, and highly-reflecting white resin particles. As described above, by including the light-scattering agent in the light-emitting portion 30, the in-plane unevenness of the light-emission intensity in the light-emitting portion 11 can be reduced.
發光部30亦可由複數層發光層之積層體構成。於此情形時,複數層發光層可包含含有出射互不相同之波長之光之量子點之複數個發光層。例如,可藉由包含含有出射第1波長之光之量子點之第1發光層、與含有出射第2波長之光之量子點之第2發光層的複數個發光層之積層體構成發光部30。藉由積層複數個發光層,可測定第一發光層之色調,並對照所獲得之色調而調整第二發光層之色調,因此可抑制批次間之色調不均。 The light-emitting portion 30 may be composed of a laminate of a plurality of light-emitting layers. In this case, the plurality of light-emitting layers may include a plurality of light-emitting layers including quantum dots that emit light of mutually different wavelengths. For example, the light-emitting unit 30 can be configured by a laminate including a first light-emitting layer including quantum dots that emit light of the first wavelength and a plurality of light-emitting layers including a second light-emitting layer that emits quantum dots of light having a second wavelength. . By stacking a plurality of light-emitting layers, the color tone of the first light-emitting layer can be measured, and the color tone of the second light-emitting layer can be adjusted in accordance with the obtained color tone, so that uneven color tone between batches can be suppressed.
發光部30雖可填充至凹部13之整體,但本實施形態中係設置於 凹部13之一部分。 The light-emitting portion 30 can be filled in the entire concave portion 13, but in the present embodiment, it is provided in One part of the recess 13.
凹部13係由蓋構件40蓋住。蓋構件40與安裝基板10接合。藉由蓋構件40與安裝基板10而劃分形成有密封空間50。光源20與發光部30密封於該密封空間50內。 The recess 13 is covered by the cover member 40. The cover member 40 is joined to the mounting substrate 10. The sealed space 50 is defined by the cover member 40 and the mounting substrate 10. The light source 20 and the light emitting portion 30 are sealed in the sealed space 50.
蓋構件40較佳為由無機材構成。具體而言,蓋構件40必須為具有透光性者,故而較佳為例如由玻璃、陶瓷等構成。如此,藉由將蓋構件40設為無機材,可抑制氧或水分侵入密封空間50內,因此可抑制因與氧或水分接觸所致之量子點之劣化。 The cover member 40 is preferably made of an inorganic material. Specifically, since the cover member 40 must be translucent, it is preferably made of, for example, glass, ceramics or the like. As described above, by making the lid member 40 an inorganic material, it is possible to suppress entry of oxygen or moisture into the sealed space 50, and thus it is possible to suppress deterioration of quantum dots due to contact with oxygen or moisture.
發光裝置1中,光源20對發光部30出射包含發光部30中所含之量子點之激發波長之光的光。若來自光源20之光對發光部30入射,則發光部30中所含之量子點出射與量子點之粒徑相應之波長之光。自發光裝置1出射該量子點之發光、或量子點之發光與來自光源20之光之混合光。 In the light-emitting device 1, the light source 20 emits light including the excitation wavelength of the quantum dots included in the light-emitting portion 30 to the light-emitting portion 30. When the light from the light source 20 is incident on the light-emitting portion 30, the quantum dots included in the light-emitting portion 30 emit light of a wavelength corresponding to the particle diameter of the quantum dot. The self-luminous device 1 emits light of the quantum dots or mixed light of the quantum dots and light from the light source 20.
發光裝置1中,安裝基板10之第1構件11位於相對於光源20與發光部30相反之側。而且,光源20覆晶安裝於第1構件11。因此,光源20之中,與發光部30為相反側之部分20a之發光強度高於發光部30側之部分20b之發光強度。由此,可將包含量子點之發光部30與光源20之成為高溫之部分隔離。又,若光源20為覆晶安裝,則無需利用接合線進行光源20與第1構件11之連接。其結果為,可抑制因自光源20或接合線產生之熱而導致發光部30中所含之量子點劣化。因此,可實現不易熱劣化之發光裝置1。 In the light-emitting device 1, the first member 11 of the mounting substrate 10 is located on the opposite side of the light source 20 and the light-emitting portion 30. Further, the light source 20 is flip-chip mounted on the first member 11. Therefore, among the light sources 20, the light-emitting intensity of the portion 20a opposite to the light-emitting portion 30 is higher than the light-emitting intensity of the portion 20b on the light-emitting portion 30 side. Thereby, the light-emitting portion 30 including the quantum dots can be isolated from the portion of the light source 20 that is at a high temperature. Moreover, when the light source 20 is flip-chip mounted, it is not necessary to connect the light source 20 and the first member 11 by a bonding wire. As a result, deterioration of the quantum dots contained in the light-emitting portion 30 due to heat generated from the light source 20 or the bonding wires can be suppressed. Therefore, the light-emitting device 1 which is not easily deteriorated thermally can be realized.
於發光部30由在LED元件或LD元件等之發光時伴有較大程度之發熱之元件所構成的情形時,光源20易達到高溫。因此,隨著光源20之發光,發光部30容易劣化。因此,使光源20之與發光部30為相反側之部分20a之發光強度高於發光部30側之部分20b之發光強度更為有效。 When the light-emitting portion 30 is constituted by an element that emits a large amount of heat when the LED element or the LD element emits light, the light source 20 easily reaches a high temperature. Therefore, as the light source 20 emits light, the light-emitting portion 30 is easily deteriorated. Therefore, it is more effective to make the light-emitting intensity of the portion 20a of the light source 20 opposite to the light-emitting portion 30 higher than the light-emitting intensity of the portion 20b on the side of the light-emitting portion 30.
就更有效地抑制發光裝置1之熱劣化之觀點而言,發光部30之分散介質之熱導率較佳為低於安裝基板10之熱導率,更佳為安裝基板10之熱導率之0.5倍以下,進而較佳為0.25倍以下。其原因在於,藉由此種方式,光源20之熱優先地傳遞至安裝基板10側,而不易傳遞至發光部30,故而發光部30中所含之量子點不易熱劣化。 The thermal conductivity of the dispersion medium of the light-emitting portion 30 is preferably lower than the thermal conductivity of the mounting substrate 10, and more preferably the thermal conductivity of the mounting substrate 10, from the viewpoint of more effectively suppressing thermal deterioration of the light-emitting device 1. 0.5 times or less, further preferably 0.25 times or less. This is because the heat of the light source 20 is preferentially transmitted to the side of the mounting substrate 10 and is not easily transmitted to the light-emitting portion 30. Therefore, the quantum dots contained in the light-emitting portion 30 are not easily thermally deteriorated.
如圖1所示,於獲得在凹部13內以蓋住光源20之方式設置有發光部30之發光裝置1b時,以蓋住裝置本體10之凹部13內所配置之光源20之方式,使用滴管等將使量子點(視需要包含光分散劑)分散之樹脂滴下至光源20上。繼而,於空氣或水分較少之環境下使樹脂層乾燥而形成發光部30。其後,於裝置本體10上放置蓋構件40,將蓋構件40與裝置本體10接合。藉由此種方式,如圖1所示,可獲得在凹部13內以蓋住光源20之方式設置有發光部30之發光裝置1。 As shown in FIG. 1, when the light-emitting device 1b in which the light-emitting portion 30 is provided to cover the light source 20 in the concave portion 13, the light source 20 disposed in the concave portion 13 of the device body 10 is used, and the drop is used. A tube or the like will drip the resin in which the quantum dots (optionally containing a light dispersing agent) are dispersed onto the light source 20. Then, the resin layer is dried in an environment where air or moisture is small to form the light-emitting portion 30. Thereafter, the cover member 40 is placed on the apparatus body 10 to engage the cover member 40 with the apparatus body 10. In this manner, as shown in FIG. 1, the light-emitting device 1 in which the light-emitting portion 30 is provided in the recess 13 so as to cover the light source 20 can be obtained.
以下,對本發明之較佳實施形態之其他例進行說明。於以下之說明中,使具有與上述第1實施形態實質上共通之功能之構件參照共通之符號,並省略說明。 Hereinafter, other examples of preferred embodiments of the present invention will be described. In the following description, members having functions substantially the same as those in the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
(第2實施形態) (Second embodiment)
圖2係第2實施形態之發光裝置1a之模式性剖視圖。 Fig. 2 is a schematic cross-sectional view showing a light-emitting device 1a according to a second embodiment.
第1實施形態之發光裝置1中,對發光部30於凹部13之底壁13b之上以覆蓋光源20之方式設置之例進行了說明。但,於本發明中,發光部之位置只要為可供來自光源之光入射之位置即可,並無特別限定。 In the light-emitting device 1 of the first embodiment, an example in which the light-emitting portion 30 is provided on the bottom wall 13b of the concave portion 13 so as to cover the light source 20 has been described. However, in the present invention, the position of the light-emitting portion is not particularly limited as long as it is a position at which light from the light source is incident.
如圖2所示,第2實施形態之發光裝置1a中,發光部30設置於成為凹部13側之蓋構件40之表面之上。發光部30係設置於蓋構件40露出於凹部13之面之實質整體之上。發光部30與光源20隔開。於發光部30與光源20之間設置有間隙。因此,光源20之熱不易藉由發光部30傳遞。由此,發光部30中所含之量子點不易熱劣化。因此,可更有效地抑制發光裝置1a之熱劣化。 As shown in FIG. 2, in the light-emitting device 1a of the second embodiment, the light-emitting portion 30 is provided on the surface of the cover member 40 which is the recess 13 side. The light-emitting portion 30 is provided on substantially the entire surface of the cover member 40 exposed on the concave portion 13. The light emitting unit 30 is spaced apart from the light source 20. A gap is provided between the light emitting unit 30 and the light source 20. Therefore, the heat of the light source 20 is not easily transmitted by the light emitting portion 30. Thereby, the quantum dots contained in the light-emitting portion 30 are not easily thermally deteriorated. Therefore, thermal deterioration of the light-emitting device 1a can be more effectively suppressed.
再者,此種發光部30例如可藉由於蓋構件40之上塗佈包含量子點與樹脂之漿料並使其乾燥而形成。 Further, such a light-emitting portion 30 can be formed, for example, by applying a slurry containing a quantum dot and a resin onto the cover member 40 and drying it.
(第3實施形態) (Third embodiment)
圖3係第3實施形態之發光裝置1b之模式性剖視圖。 Fig. 3 is a schematic cross-sectional view showing a light-emitting device 1b according to a third embodiment.
如圖3所示,本實施形態之發光裝置1b中,發光部30於光源20之上方設置於與光源20隔開設置之單元60內。發光部30密封於單元60之內部空間40a內。 As shown in FIG. 3, in the light-emitting device 1b of the present embodiment, the light-emitting portion 30 is provided above the light source 20 in a unit 60 provided spaced apart from the light source 20. The light emitting portion 30 is sealed in the internal space 40a of the unit 60.
發光裝置1b中,由於藉由單元60而使發光部30與光源20隔離,故而更有效地抑制了光源20之熱傳遞至發光部30。因此,發光部30中所含之量子點不易熱劣化。因此,可進而有效地抑制發光裝置1b之熱劣化。 In the light-emitting device 1b, since the light-emitting portion 30 is isolated from the light source 20 by the unit 60, heat transfer from the light source 20 to the light-emitting portion 30 is more effectively suppressed. Therefore, the quantum dots contained in the light-emitting portion 30 are not easily thermally deteriorated. Therefore, the thermal deterioration of the light-emitting device 1b can be further effectively suppressed.
就進而有效地抑制光源20之熱傳遞至發光部30之觀點而言,較佳為單元60之熱導率較低。單元60之熱導率例如較佳為30以下,更佳為10以下。單元60之熱導率通常為1以上。單元60例如可由玻璃、陶瓷、樹脂等構成。 In view of effectively suppressing the heat transfer from the light source 20 to the light-emitting portion 30, it is preferable that the thermal conductivity of the unit 60 is low. The thermal conductivity of the unit 60 is, for example, preferably 30 or less, more preferably 10 or less. The thermal conductivity of unit 60 is typically 1 or greater. The unit 60 may be composed of, for example, glass, ceramic, resin, or the like.
(第4實施形態) (Fourth embodiment)
圖4係第4實施形態之發光裝置之模式性剖視圖。 Fig. 4 is a schematic cross-sectional view showing a light-emitting device of a fourth embodiment.
第2實施形態中,對位於光源20與發光部30之間的密封空間50由空間構成之例進行了說明。但,本發明並不限定於該構成。 In the second embodiment, an example in which the sealed space 50 between the light source 20 and the light-emitting portion 30 is constituted by a space has been described. However, the present invention is not limited to this configuration.
如圖4所示,第4實施形態之發光裝置1c中,於密封空間50中填充有樹脂70。於此情形時,可減小樹脂70與發光部30之間之折射率差、以及樹脂70與光源20之間之折射率差。因此,可提高光之出射效率。 As shown in FIG. 4, in the light-emitting device 1c of the fourth embodiment, the resin 70 is filled in the sealed space 50. In this case, the difference in refractive index between the resin 70 and the light-emitting portion 30 and the difference in refractive index between the resin 70 and the light source 20 can be reduced. Therefore, the light emission efficiency can be improved.
樹脂70例如可由聚矽氧樹脂、環氧樹脂、丙烯酸系樹脂等構成。 The resin 70 can be composed of, for example, a polyoxyxylene resin, an epoxy resin, an acrylic resin, or the like.
樹脂70亦可包含光分散劑。於此情形時,可進而提高自光源20向發光部30之光之均一性。 The resin 70 may also contain a light dispersing agent. In this case, the uniformity of light from the light source 20 to the light-emitting portion 30 can be further improved.
如圖4所示,於獲得在密封空間50中填充有樹脂70之發光裝置1c時,首先,以蓋住裝置本體10之凹部13內所配置之光源20之方式,使用滴管等將樹脂70(視需要包含光分散劑)滴下至光源20上,並進行乾燥。其次,於蓋構件40之一表面,塗佈使量子點(視需要包含光分散劑)分散之樹脂並使其乾燥而形成樹脂層。其後,以發光部30收容於裝置本體10之凹部13之方式,於裝置本體10上放置蓋構件40,將蓋構件30與裝置本體10接合。藉由此種方式,如圖4所示,可獲得於密封空間50中填充有樹脂70之發光裝置1c。 As shown in FIG. 4, when the light-emitting device 1c in which the resin 70 is filled in the sealed space 50 is obtained, first, the resin 70 is used by using a dropper or the like so as to cover the light source 20 disposed in the concave portion 13 of the apparatus body 10. (If necessary, a light dispersing agent is included) is dropped onto the light source 20 and dried. Next, a resin which disperses a quantum dot (optionally containing a photo-dispersing agent) is applied to one surface of the lid member 40 and dried to form a resin layer. Thereafter, the cover member 40 is placed on the apparatus body 10 such that the light-emitting portion 30 is housed in the recess 13 of the apparatus body 10, and the cover member 30 is joined to the apparatus body 10. In this manner, as shown in FIG. 4, the light-emitting device 1c filled with the resin 70 in the sealed space 50 can be obtained.
再者,作為用於填充密封空間之樹脂70,使用表面張力較小之樹脂或對成為框材之第2構件12潤濕性較大之樹脂,藉此,於使其乾燥時,更易獲得中央部之厚度較薄且朝向外側厚度漸增之填充密封空間50的樹脂層。又,作為用於使成為發光部30之量子點(視需要包含光分散劑)分散之樹脂,使用表面張力較大之樹脂或對蓋構件40潤濕性較小之樹脂,藉此,更易獲得中央部之厚度較厚且朝向外側厚度漸減之樹脂層,而更易獲得於發光部30之至少周緣部發光部30之厚度朝向外側漸減之發光裝置1。再者,於第2及第4實施形態中,作為於蓋構件40之一表面形成發光部30之方法,對塗佈使量子點分散之樹脂並直接於蓋構件40之一表面形成發光部30之方法進行了說明,但本發明並不限定於該方法。例如,亦可將使量子點分散之樹脂填充至具有所需形狀之模具中而成形,並使其乾燥,藉此預先形成發光部30,並使用已調整折射率之接著劑將所成形之發光部30接著於蓋構件40之一表面。藉由此種方式,可大量生產相同形狀之發光部30,可抑制因發光部之厚度等之形狀導致之色調不均。 Further, as the resin 70 for filling the sealed space, a resin having a small surface tension or a resin having a large wettability to the second member 12 serving as the frame member is used, whereby the center is more easily obtained when it is dried. The resin layer filling the sealed space 50 is thinner and thicker toward the outside. Further, as a resin for dispersing quantum dots (including a photo-dispersing agent) to be the light-emitting portion 30, a resin having a large surface tension or a resin having a small wettability to the lid member 40 is used, whereby it is more easily obtained. The central portion has a thick resin layer which is gradually reduced in thickness toward the outer side, and is more easily obtained in the light-emitting device 1 in which the thickness of the light-emitting portion 30 of the light-emitting portion 30 is gradually decreased toward the outer side. Further, in the second and fourth embodiments, as a method of forming the light-emitting portion 30 on one surface of the lid member 40, the resin that disperses the quantum dots is applied and the light-emitting portion 30 is formed directly on one surface of the lid member 40. The method has been described, but the present invention is not limited to the method. For example, a resin in which quantum dots are dispersed may be filled in a mold having a desired shape to be formed and dried, whereby the light-emitting portion 30 is formed in advance, and the formed light is formed using an adhesive having a refractive index adjusted. The portion 30 is then on one of the surfaces of the cover member 40. According to this aspect, the light-emitting portion 30 having the same shape can be mass-produced, and unevenness in color tone due to the shape of the thickness of the light-emitting portion or the like can be suppressed.
1‧‧‧發光裝置 1‧‧‧Lighting device
10‧‧‧安裝基板 10‧‧‧Installation substrate
11‧‧‧第1構件 11‧‧‧1st component
11a、11b‧‧‧焊墊 11a, 11b‧‧‧ pads
11c、11d‧‧‧通孔電極 11c, 11d‧‧‧through hole electrodes
11e、11f‧‧‧端子電極 11e, 11f‧‧‧ terminal electrodes
12‧‧‧第2構件 12‧‧‧2nd component
12a‧‧‧貫通孔 12a‧‧‧through hole
13‧‧‧凹部 13‧‧‧ recess
13a‧‧‧側壁 13a‧‧‧ Sidewall
13b‧‧‧底壁 13b‧‧‧ bottom wall
20‧‧‧光源 20‧‧‧Light source
20a‧‧‧部分 Section 20a‧‧‧
20b‧‧‧部分 Section 20b‧‧‧
30‧‧‧發光部 30‧‧‧Lighting Department
40‧‧‧蓋構件 40‧‧‧covering components
50‧‧‧密封空間 50‧‧‧ sealed space
Claims (7)
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JP2014125839 | 2014-06-18 |
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TW104117514A TW201608741A (en) | 2014-06-18 | 2015-05-29 | Illuminating device |
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JP (1) | JPWO2015194296A1 (en) |
KR (1) | KR20170020306A (en) |
CN (1) | CN106104824A (en) |
TW (1) | TW201608741A (en) |
WO (1) | WO2015194296A1 (en) |
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TWI823371B (en) * | 2020-01-31 | 2023-11-21 | 日商日亞化學工業股份有限公司 | Planar light source |
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JP4231418B2 (en) * | 2004-01-07 | 2009-02-25 | 株式会社小糸製作所 | Light emitting module and vehicle lamp |
JP2006135002A (en) * | 2004-11-04 | 2006-05-25 | Koito Mfg Co Ltd | Light emitting device and vehicle lamp |
JP5209177B2 (en) * | 2005-11-14 | 2013-06-12 | 新光電気工業株式会社 | Semiconductor device and manufacturing method of semiconductor device |
JP2007273498A (en) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | Wavelength converter and light emitting device |
JP5483669B2 (en) | 2008-11-26 | 2014-05-07 | 昭和電工株式会社 | Liquid curable resin composition, method for producing cured resin containing nanoparticle phosphor, method for producing light emitting device, light emitting device and lighting device |
CN103443941A (en) * | 2011-03-31 | 2013-12-11 | 松下电器产业株式会社 | Semiconductor light-mitting device |
GB201109065D0 (en) * | 2011-05-31 | 2011-07-13 | Nanoco Technologies Ltd | Semiconductor nanoparticle-containing materials and light emitting devices incorporating the same |
CN103650183B (en) * | 2011-06-30 | 2017-02-22 | 松下知识产权经营株式会社 | Light-emitting device |
JP2014096419A (en) * | 2012-11-07 | 2014-05-22 | Stanley Electric Co Ltd | Optoelectronic device |
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- 2015-05-19 WO PCT/JP2015/064304 patent/WO2015194296A1/en active Application Filing
- 2015-05-19 CN CN201580013121.2A patent/CN106104824A/en active Pending
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TWI823371B (en) * | 2020-01-31 | 2023-11-21 | 日商日亞化學工業股份有限公司 | Planar light source |
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CN106104824A (en) | 2016-11-09 |
WO2015194296A1 (en) | 2015-12-23 |
KR20170020306A (en) | 2017-02-22 |
JPWO2015194296A1 (en) | 2017-04-20 |
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