TW201500597A - Functional chromium layer with improved corrosion resistance - Google Patents
Functional chromium layer with improved corrosion resistance Download PDFInfo
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- TW201500597A TW201500597A TW103114078A TW103114078A TW201500597A TW 201500597 A TW201500597 A TW 201500597A TW 103114078 A TW103114078 A TW 103114078A TW 103114078 A TW103114078 A TW 103114078A TW 201500597 A TW201500597 A TW 201500597A
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- chromium layer
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- functional chromium
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- 239000011651 chromium Substances 0.000 title claims abstract description 43
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 229910052804 chromium Inorganic materials 0.000 title claims abstract description 41
- 230000007797 corrosion Effects 0.000 title abstract description 11
- 238000005260 corrosion Methods 0.000 title abstract description 11
- 150000003839 salts Chemical class 0.000 claims abstract description 22
- 238000009713 electroplating Methods 0.000 claims abstract description 21
- NARPMWPOFWHFDX-UHFFFAOYSA-N methanetrisulfonic acid Chemical compound OS(=O)(=O)C(S(O)(=O)=O)S(O)(=O)=O NARPMWPOFWHFDX-UHFFFAOYSA-N 0.000 claims abstract description 20
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 12
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000007747 plating Methods 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 239000004094 surface-active agent Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 5
- OPUAWDUYWRUIIL-UHFFFAOYSA-N methanedisulfonic acid Chemical compound OS(=O)(=O)CS(O)(=O)=O OPUAWDUYWRUIIL-UHFFFAOYSA-N 0.000 claims description 5
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 4
- 125000002467 phosphate group Chemical class [H]OP(=O)(O[H])O[*] 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 150000003871 sulfonates Chemical class 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 3
- AFAXGSQYZLGZPG-UHFFFAOYSA-N ethanedisulfonic acid Chemical compound OS(=O)(=O)CCS(O)(=O)=O AFAXGSQYZLGZPG-UHFFFAOYSA-N 0.000 claims description 3
- FACKKNUWEJWKIC-UHFFFAOYSA-N propane-1,2,3-trisulfonic acid Chemical compound OS(=O)(=O)CC(S(O)(=O)=O)CS(O)(=O)=O FACKKNUWEJWKIC-UHFFFAOYSA-N 0.000 claims description 3
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 150000003863 ammonium salts Chemical class 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 claims description 2
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- LJYOXSMOJRTHIL-UHFFFAOYSA-N propane-1,2-disulfonic acid Chemical compound OS(=O)(=O)C(C)CS(O)(=O)=O LJYOXSMOJRTHIL-UHFFFAOYSA-N 0.000 claims description 2
- MGNVWUDMMXZUDI-UHFFFAOYSA-N propane-1,3-disulfonic acid Chemical compound OS(=O)(=O)CCCS(O)(=O)=O MGNVWUDMMXZUDI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011133 lead Substances 0.000 claims 1
- 239000003054 catalyst Substances 0.000 abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- -1 chromium (VI) compound Chemical class 0.000 description 6
- 239000011550 stock solution Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- ZZTMMVAAULUFCS-UHFFFAOYSA-L disodium;methanedisulfonate Chemical compound [Na+].[Na+].[O-]S(=O)(=O)CS([O-])(=O)=O ZZTMMVAAULUFCS-UHFFFAOYSA-L 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- JWLDKEPWWPTYLJ-UHFFFAOYSA-K trisodium;methanetrisulfonate Chemical compound [Na+].[Na+].[Na+].[O-]S(=O)(=O)C(S([O-])(=O)=O)S([O-])(=O)=O JWLDKEPWWPTYLJ-UHFFFAOYSA-K 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-N ethanesulfonic acid Chemical compound CCS(O)(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-N 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- FWFGVMYFCODZRD-UHFFFAOYSA-N oxidanium;hydrogen sulfate Chemical compound O.OS(O)(=O)=O FWFGVMYFCODZRD-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- UUEFNRLFBIHJFY-UHFFFAOYSA-K trisodium propane-1,2,3-trisulfonate Chemical compound [Na+].[Na+].[Na+].[O-]S(=O)(=O)CC(CS([O-])(=O)=O)S([O-])(=O)=O UUEFNRLFBIHJFY-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/04—Electroplating: Baths therefor from solutions of chromium
- C25D3/10—Electroplating: Baths therefor from solutions of chromium characterised by the organic bath constituents used
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/04—Electroplating: Baths therefor from solutions of chromium
- C25D3/08—Deposition of black chromium, e.g. hexavalent chromium, CrVI
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
本發明係關於鍍敷浴組合物及藉由電鍍沈積功能鉻層之製程。 This invention relates to a plating bath composition and a process for depositing a functional chromium layer by electroplating.
藉由電鍍沈積之功能鉻層係用於改良諸如減震器、液壓活塞及諸如此類等產品之磨耗及腐蝕抗性。 The functional chromium layer deposited by electroplating is used to improve wear and corrosion resistance of products such as shock absorbers, hydraulic pistons, and the like.
所用之鍍敷浴組合物包含鉻酸、硫酸根離子、水及烷基-磺酸或其鹽。 The plating bath composition used comprises chromic acid, sulfate ion, water, and an alkyl-sulfonic acid or a salt thereof.
具有莫耳比S:C1:3之烷基-磺酸觸媒揭示於EP 0 196 053 B1中。適宜烷基-磺酸之實例為甲基-磺酸、乙基-磺酸、丙基-磺酸、甲烷-二磺酸及1,2-乙烷-二磺酸。該等烷基-磺酸改良鍍敷期間之陰極電流效率。 With Moerby S:C A 1:3 alkyl-sulfonic acid catalyst is disclosed in EP 0 196 053 B1. Examples of suitable alkyl-sulfonic acids are methyl-sulfonic acid, ethyl-sulfonic acid, propyl-sulfonic acid, methane-disulfonic acid and 1,2-ethane-disulfonic acid. These alkyl-sulfonic acids improve cathode current efficiency during plating.
烷基-聚磺酸、鹵化烷基-聚磺酸及相應鹽(例如甲烷-二磺酸)在鍍敷期間減少鉛陽極之腐蝕之用途揭示於EP 0 452 471 B1中。 The use of alkyl-polysulfonic acids, halogenated alkyl-polysulfonic acids and corresponding salts (e.g., methane-disulfonic acid) to reduce corrosion of lead anodes during plating is disclosed in EP 0 452 471 B1.
作為用於沈積功能鉻層之鍍敷浴組合物中之添加劑之芳香族-三磺酸揭示於US 2,195,409中。自該等鍍敷浴組合物獲得之鉻層明亮且均勻。 Aromatic-trisulphonic acid as an additive in a plating bath composition for depositing a functional chromium layer is disclosed in U.S. Patent 2,195,409. The chromium layer obtained from the plating bath compositions is bright and uniform.
用於沈積具有改良陰極電流效率之功能鉻層且包含丙烷-1,2,3-三磺酸之鍍敷浴組合物揭示於DE 43 05 732 A1中。 A plating bath composition for depositing a functional chromium layer having improved cathode current efficiency and comprising propane-1,2,3-trisulphonic acid is disclosed in DE 43 05 732 A1.
本發明之目標為提供鍍敷浴組合物及利用該鍍敷浴組合物沈積具有改良腐蝕抗性之功能鉻層之製程。 It is an object of the present invention to provide a plating bath composition and a process for depositing a functional chromium layer having improved corrosion resistance using the plating bath composition.
此目標係利用用於沈積功能鉻層之水性電鍍浴來解決,其包含(i)鉻(VI)離子源,(ii)硫酸根離子源及(iii)甲烷-三磺酸或其鹽。 This object is addressed by an aqueous electroplating bath for depositing a functional chromium layer comprising (i) a chromium (VI) ion source, (ii) a sulfate ion source and (iii) methane-trisulphonic acid or a salt thereof.
此目標此外係利用用於將功能鉻層沈積至金屬基材上之製程來解決,其以此順序包含以下步驟:(i)提供金屬基材,(ii)使該基材與包含鉻(VI)離子源、硫酸根離子源及甲烷-三磺酸或其鹽之水性電鍍浴接觸,及(iii)將外電流施加至作為陰極之該基材且從而將功能鉻層沈積至該基材上。 This object is further solved by a process for depositing a functional chromium layer onto a metal substrate, which comprises the steps of: (i) providing a metal substrate, (ii) providing the substrate with chromium (VI) An ion source, a source of sulfate ion, and an aqueous plating bath of methane-trisulphonic acid or a salt thereof, and (iii) applying an external current to the substrate as a cathode and thereby depositing a functional chromium layer on the substrate .
自水性鍍敷浴並藉由本發明之製程沈積之功能鉻層與自包含已知烷基-磺酸之習用電鍍浴組合物沈積之功能鉻層相比具有增加之腐蝕抗性。 The functional chromium layer deposited from the aqueous plating bath and deposited by the process of the present invention has increased corrosion resistance as compared to a functional chromium layer deposited from a conventional electroplating bath composition comprising a known alkyl-sulfonic acid.
本發明之水性電鍍浴包含鉻(VI)離子源、硫酸根離子、甲烷-三磺酸或其鹽及視情況表面活性劑。 The aqueous electroplating bath of the present invention comprises a chromium (VI) ion source, a sulfate ion, methane-trisulfonic acid or a salt thereof, and optionally a surfactant.
鉻(VI)離子源較佳為可溶於鍍敷浴中之鉻(VI)化合物,例如CrO3、Na2Cr2O7及K2Cr2O7,最佳CrO3。本發明電鍍浴較佳中之鉻(VI)離子之濃度在80g/l至600g/l、更佳100g/l至200g/l之範圍內。 The chromium (VI) ion source is preferably a chromium (VI) compound which is soluble in the plating bath, such as CrO 3 , Na 2 Cr 2 O 7 and K 2 Cr 2 O 7 , and most preferably CrO 3 . Preferably, the concentration of chromium (VI) ions in the electroplating bath of the present invention is in the range of from 80 g/l to 600 g/l, more preferably from 100 g/l to 200 g/l.
電鍍浴中所存在之硫酸根離子較佳以硫酸或鍍敷浴可溶性硫酸 鹽(例如Na2SO4)之形式添加。電鍍浴中之硫酸根離子之濃度較佳在1g/l至15g/l、更佳2g/l至6g/l之範圍內。 Sulfate ions present in the plating bath is preferably sulfuric acid or soluble sulfate plating bath (e.g. Na 2 SO 4) is added in the form of. The concentration of the sulfate ion in the plating bath is preferably in the range of from 1 g/l to 15 g/l, more preferably from 2 g/l to 6 g/l.
鉻酸與硫酸鹽之濃度比(wt.-%)較佳在25至200、更佳60至150之範圍內。 The concentration ratio (wt.-%) of chromic acid to sulfate is preferably in the range of 25 to 200, more preferably 60 to 150.
電鍍浴中之烷基-磺酸為甲烷-三磺酸(HC(SO2OH)3)或甲烷-三磺酸與一或多種其他烷基-磺酸之混合物。與甲烷-三磺酸成混合物之適宜其他烷基-磺酸包含甲烷-磺酸、甲烷-二磺酸、乙烷-磺酸、1,2-乙烷-二磺酸、丙基磺酸、1,2-丙烷-二磺酸、1,3-丙烷-二磺酸及1,2,3-丙烷-三磺酸。亦可採用前述磺酸之相應鹽(例如鈉、鉀及銨鹽)代替游離烷基-磺酸或以其與游離烷基-磺酸之混合物形式採用。 The alkyl-sulfonic acid in the electroplating bath is methane-trisulphonic acid (HC(SO 2 OH) 3 ) or a mixture of methane-trisulfonic acid and one or more other alkyl-sulfonic acids. Other alkyl-sulfonic acids suitable for the mixture with methane-trisulfonic acid include methane-sulfonic acid, methane-disulfonic acid, ethane-sulfonic acid, 1,2-ethane-disulfonic acid, propylsulfonic acid, 1,2-propane-disulfonic acid, 1,3-propane-disulfonic acid and 1,2,3-propane-trisulphonic acid. Instead of the free alkyl-sulfonic acid or the mixture of it and the free alkyl-sulfonic acid, it is also possible to use the corresponding salts of the aforementioned sulfonic acids (for example sodium, potassium and ammonium salts).
在本發明電鍍浴中氧化成甲烷-三磺酸或其鹽之甲烷-三磺酸或其鹽之前體可用作甲烷-三磺酸或其鹽之部分或唯一來源。 The methane-trisulphonic acid or its salt precursor which is oxidized to methane-trisulphonic acid or a salt thereof in the electroplating bath of the present invention can be used as a partial or sole source of methane-trisulphonic acid or a salt thereof.
本發明鍍敷浴中之甲烷-三磺酸或其鹽之濃度較佳在2mmol/l至80mmol/l、更佳4mmol/l至60mmol/l之範圍內。 The concentration of methane-trisulphonic acid or a salt thereof in the plating bath of the present invention is preferably in the range of 2 mmol/l to 80 mmol/l, more preferably 4 mmol/l to 60 mmol/l.
若採用甲烷-三磺酸與其他烷基-磺酸之混合物,則甲烷-三磺酸及其他烷基-磺酸或前述之鹽之總濃度較佳在4mmol/l至160mmol/l、更佳12mmol/l至120mmol/l之範圍內。 If a mixture of methane-trisulphonic acid and another alkyl-sulfonic acid is used, the total concentration of methane-trisulfonic acid and other alkyl-sulfonic acids or the aforementioned salts is preferably from 4 mmol/l to 160 mmol/l, more preferably It is in the range of 12 mmol/l to 120 mmol/l.
所沈積功能鉻層內部之高數量之微觀裂縫係合意的,此乃因由此而達成高腐蝕抗性及期望機械性質(例如減少之內應力)。與功能鉻層內之巨觀裂縫相比微觀裂縫不會延伸至下伏基材之表面且從而不會造成下伏基材材料(其通常為鋼)之腐蝕。 A high number of microscopic cracks within the deposited functional chromium layer are desirable because of the high corrosion resistance and desired mechanical properties (e.g., reduced internal stress). The microcracks do not extend to the surface of the underlying substrate as compared to the macroscopic cracks in the functional chromium layer and thus do not cause corrosion of the underlying substrate material, which is typically steel.
甲烷-三磺酸或其鹽或與其他烷基-磺酸之混合物之成份使得高數量之期望微觀裂縫在每cm之功能鉻層表面200個至1000個、更佳450個至750個微觀裂縫之範圍內,如在含有氫氧化鈉及K3[Fe(CN)6]之水溶液中蝕刻後利用光學顯微鏡所測定。對沿各線之微觀裂縫數計數且然後利用下式計數每cm之微觀裂縫數: 每cm之微觀裂縫=(每條線之平均裂縫數):(以cm表示之線長度) The composition of methane-trisulphonic acid or its salt or a mixture with other alkyl-sulfonic acids results in a high number of desired microscopic cracks in the range of 200 to 1000, more preferably 450 to 750 micro cracks per cm of the functional chromium layer surface. Within the range, it is measured by an optical microscope after etching in an aqueous solution containing sodium hydroxide and K 3 [Fe(CN) 6 ]. Count the number of microscopic cracks along each line and then count the number of micro cracks per cm using the following formula: Microcracks per cm = (average number of cracks per line): (line length in cm)
與作為唯一烷基-磺酸之甲烷-二磺酸鈉鹽或丙烷-1,2,3-三磺酸鈉鹽相比,利用甲烷-三磺酸或其鹽作為觸媒增加微觀裂縫數及腐蝕抗性。此顯示於實例1至3中。 Compared with the methane-disulfonic acid sodium salt or the propane-1,2,3-trisulphonic acid sodium salt as the sole alkyl-sulfonic acid, the methane-trisulphonic acid or its salt is used as a catalyst to increase the micro crack number and Corrosion resistant. This is shown in Examples 1 to 3.
此外,在較高電流密度下亦獲得增加數量之期望微觀裂縫(實例3),而在已知烷基-磺酸(例如甲烷-二磺酸)之情形下在較高電流密度下微觀裂縫數減少(實例1)。鍍敷期間之較高電流密度值係合意的,此乃因鍍敷速度由此而增加。 In addition, an increased number of desired microcracks are obtained at higher current densities (Example 3), while microcracks at higher current densities in the case of known alkyl-sulfonic acids (eg, methane-disulfonic acid) Reduced (Example 1). Higher current density values during plating are desirable because of the increased plating speed.
本發明電鍍浴視情況進一步包含減少在鍍敷液體頂部不期望發泡體之形成之表面活性劑。表面活性添加劑係選自包含以下之群:全氟化磺酸鹽表面活性劑(tenside)、全氟化磷酸鹽表面活性劑、全氟化膦酸鹽表面活性劑、部分氟化磺酸鹽表面活性劑、部分氟化磷酸鹽表面活性劑、部分氟化膦酸鹽表面活性劑及其混合物。 The electroplating bath of the present invention optionally further comprises a surfactant which reduces the formation of undesirable foams on top of the plating liquid. The surface active additive is selected from the group consisting of a perfluorinated sulfonate surfactant (tenside), a perfluorinated phosphate surfactant, a perfluorinated phosphonate surfactant, and a partially fluorinated sulfonate surface. An active agent, a partially fluorinated phosphate surfactant, a partially fluorinated phosphonate surfactant, and mixtures thereof.
可選表面活性劑之濃度較佳在0.05g/l至4g/l、更佳0.1g/l至2.5g/l之範圍內。 The concentration of the optional surfactant is preferably in the range of from 0.05 g/l to 4 g/l, more preferably from 0.1 g/l to 2.5 g/l.
在鍍敷期間所施加之電流密度較佳係在10A/dm2至250A/dm2、更佳40A/dm2至200A/dm2之範圍內。欲鍍敷有功能鉻層之基材用作電鍍期間之陰極。 The current density applied during plating is preferably in the range of 10 A/dm 2 to 250 A/dm 2 , more preferably 40 A/dm 2 to 200 A/dm 2 . A substrate to be plated with a functional chromium layer is used as a cathode during electroplating.
陰極電流效率係在電鍍功能鉻層期間實際用於在陰極處沈積金屬(鉻)之電流百分比。 The cathode current efficiency is the percentage of current actually used to deposit metal (chromium) at the cathode during the plating of the functional chromium layer.
本發明製程之較佳電流效率在50A/dm2之電流密度下為22%。 The preferred current efficiency of the process of the invention is at a current density of 50 A/dm 2 twenty two%.
本發明電鍍浴之溫度在鍍敷期間較佳保持在10℃至80℃之範圍內、更佳在45℃至70℃之範圍內且最佳50℃至60℃。 The temperature of the electroplating bath of the present invention is preferably maintained in the range of 10 ° C to 80 ° C during the plating, more preferably in the range of 45 ° C to 70 ° C and most preferably 50 ° C to 60 ° C.
在本發明製程中較佳應用惰性陽極。 An inert anode is preferably used in the process of the present invention.
適宜惰性陽極係由(例如)鈦或經一或多種鉑族金屬、其合金及/或其氧化物塗敷之鈦合金製得。該塗層較佳係由鉑金屬、氧化銥或其混合物組成。該等惰性陽極使得與鉛陽極相比在電鍍期間之較高電流密度及由此之較高鍍敷速率成為可能。 Suitable inert anodes are made, for example, from titanium or a titanium alloy coated with one or more platinum group metals, alloys thereof and/or oxides thereof. The coating preferably consists of platinum metal, cerium oxide or a mixture thereof. These inert anodes make it possible to have a higher current density during plating and thus a higher plating rate than lead anodes.
本發明鍍敷浴亦可利用習用鉛陽極來操作。 The plating bath of the present invention can also be operated using conventional lead anodes.
當使用該等惰性陽極時形成鉻(III)離子。作為基於鉻(VI)離子之功能鉻電鍍浴中之烷基-磺酸之甲烷-三磺酸及/或其鹽對鉻(III)離子極為敏感。 Chromium (III) ions are formed when such inert anodes are used. The methane-trisulphonic acid and/or its salt as an alkyl-sulfonic acid in a chromium (VI) ion-based functional chromium plating bath is extremely sensitive to chromium (III) ions.
在本發明之較佳實施例中,將另一金屬之陽離子(例如銀離子、鉛離子及其混合物)添加至電鍍浴。因此,可使鉻(III)離子之負面影響降至最小。另一金屬之離子之濃度較佳在0.005g/l至5g/l、更佳0.01g/l至3g/l之範圍內。 In a preferred embodiment of the invention, a cation of another metal (e.g., silver ions, lead ions, and mixtures thereof) is added to the electroplating bath. Therefore, the negative effects of chromium (III) ions can be minimized. The concentration of the ion of the other metal is preferably in the range of from 0.005 g/l to 5 g/l, more preferably from 0.01 g/l to 3 g/l.
本發明提供功能鉻電鍍浴及將功能鉻層沈積至基材上從而具有在高電流密度下亦獲得之增加之腐蝕抗性的製程。 The present invention provides a functional chromium plating bath and a process for depositing a functional chromium layer onto a substrate to provide increased corrosion resistance also at high current densities.
現將參照以下非限制性實例對本發明加以闡釋。 The invention will now be illustrated with reference to the following non-limiting examples.
在含有氫氧化鈉及K3[Fe(CN)6]之水溶液中蝕刻鉻層之表面後利用光學顯微鏡測定微觀裂縫數。測定計算平均微觀裂縫數之沿若干具有相同長度之線之微觀裂縫數,且然後將其除以線長度(以cm給出)以提供「平均微觀裂縫數」(裂縫/cm)。 The number of microcracks was measured by an optical microscope after etching the surface of the chromium layer in an aqueous solution containing sodium hydroxide and K 3 [Fe(CN) 6 ]. The number of microscopic cracks along the number of lines having the same length was calculated for the average microscopic crack number, and then divided by the line length (given in cm) to provide "average micro crack number" (crack/cm).
根據ISO 9227 NSS(中性鹽霧測試)測定功能鉻層之腐蝕抗性。 The corrosion resistance of the functional chromium layer was determined according to ISO 9227 NSS (Neutral Salt Spray Test).
在實例1至3中使用含有250g/l CrO3、3.2g/l硫酸根離子及2ml/l之表面活性劑之水性電鍍浴儲備溶液。將不同量之烷基-磺酸添加至此儲備溶液中,然後沈積功能鉻層。 3 using aqueous surface 3.2g / l of sulfate ion and 2ml / l of the active agents of the electroplating bath stock solution containing 250g / l CrO 3 in Example 1 to. Different amounts of alkyl-sulfonic acid were added to this stock solution and a functional chromium layer was deposited.
烷基-磺酸為以2g/l至12g/l(7.6mmol/l至45.4mmol/l)之濃度添 加至儲備溶液中之甲烷-二磺酸二鈉鹽。此烷基-磺酸揭示於EP 0 452 471 B1中。 The alkyl-sulfonic acid is added in a concentration of from 2 g/l to 12 g/l (7.6 mmol/l to 45.4 mmol/l). Add to the methane-disulfonic acid disodium salt in the stock solution. This alkyl-sulfonic acid is disclosed in EP 0 452 471 B1.
表1總結在不同濃度之作為唯一烷基-磺酸之甲烷-二磺酸二鈉鹽下測定之平均微觀裂縫數(鍍敷浴溫度:58℃,電流密度:50A/dm2)。 Table 1 summarizes the average number of microcracks measured at different concentrations of methane-disulfonic acid disodium salt as the sole alkyl-sulfonic acid (plating bath temperature: 58 ° C, current density: 50 A/dm 2 ).
僅當在儲備溶液中使用窄濃度範圍之觸媒甲烷-二磺酸二鈉鹽時獲得高數量之期望微觀裂縫。 A high number of desired micro cracks are obtained only when a narrow concentration range of catalyst methane-disulfonic acid disodium salt is used in the stock solution.
表2總結對於具有18.9mmol/l(5g/l)之甲烷-二磺酸二鈉鹽作為唯一烷基-磺酸之電鍍浴組合物在不同電流密度下測定之平均微觀裂縫數。 Table 2 summarizes the average number of microcracks measured at different current densities for electroplating bath compositions having 18.9 mmol/l (5 g/l) of methane-disulfonic acid disodium salt as the sole alkyl-sulfonic acid.
期望微觀裂縫之數量隨電流密度增加而下降。 It is expected that the number of micro cracks will decrease as the current density increases.
根據ISO 9227 NSS在192h之中性鹽霧測試後測定出形成不期望紅鏽(在192h後>0.1%之表面積由紅鏽敷蓋)。 Undesired red rust was formed after a 192 h neutral salt spray test according to ISO 9227 NSS (>0.1% surface area after 192 h was covered with red rust).
烷基-磺酸為以14.3mmol/l(5g/l)之濃度添加至儲備溶液中之丙 烷-1,2,3-三磺酸三鈉鹽。此烷基-二磺酸揭示於DE 43 05 732 A1中。 The alkyl-sulfonic acid is added to the stock solution at a concentration of 14.3 mmol/l (5 g/l). Alkane-1,2,3-trisulphonic acid trisodium salt. This alkyl-disulfonic acid is disclosed in DE 43 05 732 A1.
50A/dm2之電流效率及55℃之鍍敷浴溫度為17.4%且在該等條件下沈積之鉻層中之微觀裂縫數為160個裂縫/cm。 The current efficiency of 50 A/dm 2 and the plating bath temperature of 55 ° C were 17.4% and the number of micro cracks in the chromium layer deposited under these conditions was 160 cracks/cm.
已根據ISO 9227 NSS在24h之中性鹽霧測試後測定出形成不期望紅鏽(在24h後>0.1%之表面積由紅鏽敷蓋)。 Undesired red rust was formed after a 24 h neutral salt spray test according to ISO 9227 NSS (>0.1% surface area after 24 h was covered with red rust).
烷基-磺酸為以6.2mmol/l至37.2mmol/l(2g/l至12g/l)之濃度添加至儲備溶液中之甲烷-三磺酸三鈉鹽。 The alkyl-sulfonic acid is a methane-trisulphonic acid trisodium salt added to the stock solution at a concentration of 6.2 mmol/l to 37.2 mmol/l (2 g/l to 12 g/l).
表3總結在不同濃度之作為唯一烷基-磺酸之甲烷-三磺酸三鈉鹽下測定之平均微觀裂縫數(鍍敷浴溫度:58℃,電流密度:50A/dm2)。 Table 3 summarizes the average number of microcracks measured at different concentrations of methane-trisulphonic acid trisodium salt as the sole alkyl-sulfonic acid (plating bath temperature: 58 ° C, current density: 50 A/dm 2 ).
表4總結對於具有24.8mmol/l(8g/l)之甲烷-三磺酸三鈉鹽作為唯一烷基-磺酸之電鍍浴組合物在不同電流密度下測定之平均微觀裂縫數。 Table 4 summarizes the average number of microcracks measured at different current densities for an electroplating bath composition having 24.8 mmol/l (8 g/l) of methane-trisulphonic acid trisodium salt as the sole alkyl-sulfonic acid.
在施加之整個電流密度範圍中獲得高數量之期望微觀裂縫。 A high number of desired micro cracks are obtained over the entire range of current densities applied.
根據ISO 9227 NSS直至552h之中性鹽霧測試才測定出形成不期望紅鏽。 Undesired red rust formation was determined according to ISO 9227 NSS up to 552 h neutral salt spray test.
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