CN106521574B - A kind of non-cyanide plating solution for copper-plating used and preparation method thereof suitable for width pH and wide current density range - Google Patents
A kind of non-cyanide plating solution for copper-plating used and preparation method thereof suitable for width pH and wide current density range Download PDFInfo
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Abstract
本发明提供了一种适用于宽pH和宽电流密度范围的无氰镀铜电镀液,包括20‑90g/L氨基甲叉二膦酸(AMDP),10‑70g/L肌醇六磷酸(PA)或肌醇六磷酸钠,0.5‑15 g/L焦磷酸盐,3‑25 g/L铜盐。本发明所提供的无氰镀铜电镀液,适用PH范围是6‑13.5,适用电流密度范围为0.2‑4安培/平方分米,镀液配方简单,无毒,没有氰化物污染,在铁基体、镁合金、锌或锌合金基体、浸锌后的铝上直接镀铜,获得铜镀层与基体的结合力优异。
The invention provides a kind of cyanide-free copper plating electroplating solution that is applicable to wide pH and wide current density range, comprises 20-90g/L aminomethylene diphosphonic acid (AMDP), 10-70g/L phytic acid (PA ) or sodium phytic acid, 0.5‑15 g/L pyrophosphate, 3‑25 g/L copper salt. The cyanide-free copper plating solution provided by the present invention has a suitable pH range of 6-13.5 and a suitable current density range of 0.2-4 ampere/square decimeter. The plating solution has a simple formula, is nontoxic, and has no cyanide pollution. , Magnesium alloy, zinc or zinc alloy substrate, and zinc-dipped aluminum are directly plated with copper to obtain excellent bonding between the copper coating and the substrate.
Description
技术领域technical field
本发明属于电镀技术领域,具体涉及一种无氰镀铜电镀液,尤其涉及一种适用于宽pH和宽电流密度范围的无氰镀铜电镀液及其制备方法。The invention belongs to the technical field of electroplating, and in particular relates to a cyanide-free copper-plating electroplating solution, in particular to a cyanide-free copper-plating electroplating solution suitable for wide pH and wide current density ranges and a preparation method thereof.
背景技术Background technique
酸性硫酸铜电镀液在铁、锌或锌合金、镁合金、铝等金属基体直接镀铜会发生置换反应,导致基体与铜镀层的结合力很差。为了获得高结合力,现在工业上广泛使用的是碱性氰化物电镀液。但由于氰化物具有非常大的生物毒性,会产生重大环境和社会安全事故隐患,国家已多次出台淘汰含氰电镀的产业政策。因此无氰镀铜技术的开发很迫切,但也是一个技术难题。目前研究报道比较典型的无氰镀铜体系有碱性焦磷酸盐镀铜、氨基磺酸盐镀铜、柠檬酸盐镀铜、有机膦酸盐镀铜、有机羧酸盐镀铜等。中国发明专利(专利号:85103672)公开了一种碱性无氰电解镀铜液,提出用乙二醇为配位剂。以结构中含磷的化合物为主配位剂的镀铜液是无氰镀铜中最有工业化前途的工艺。如焦磷酸盐镀铜液已在一些钢基体上应用,焦磷酸盐体系所获的铜镀层致密,沉积速度也相对较高,在低电流密度区域也能较快沉积上铜镀层。但以焦磷酸盐为主配位剂的镀铜溶液对pH值控制很严格(一般8.13-8.19),溶液pH值较低时有部分焦磷酸根易水解生成正磷酸根,从而使镀铜溶液失效。为此有研究提出将焦磷酸盐P-O-P键用P-C-P取代,从而发展了以P-C-P键构成的偕二膦酸类化合物为铜配位剂,这类化合物如羟基乙叉二膦酸(HEDP),氨基三甲叉膦酸(ATMP),乙二胺四甲叉膦酸(EDTMP),氨基甲叉二膦酸(AMDP)等,不仅具有焦磷酸盐的表面活性,同时比焦磷酸盐具有更强的铜配位能力,将大大提高了镀液的工艺性能。早在20世纪70年代南京大学配位化学研究所通过攻关最早系统地提出以羟基乙叉二膦酸(HEDP)为主配位剂的碱性无氰镀铜液,且以羟基乙叉二膦酸(HEDP)为主配位剂的碱性无氰镀铜液电化学性能在研究论文中也多次提到(方景礼,马辛卯,陆渭珍.高等学校化学学报,1981,2(3):285-293。郑精武蒋梅燕乔梁,等,CO3 2-对羟基乙叉二膦酸镀铜液的影响研究,物理化学学报,2008,24(9):1733-1738)。中国发明专利(专利号201010136861.4)以公开了一种以氨基甲叉二膦酸(AMDP)为主配位剂的碱性无氰镀铜电镀液。AMDP与HEDP分子结构相比,去掉与中间碳位相连的-CH3,同时接技上了-NH2基团,使得与铜离子的配位能力更强。这种以单一有机膦酸盐为配位剂的镀液,在pH值相对较高时(一般pH>9)高时,因为有机膦酸盐中-OH的充分电离,可使与铜离子配位开成稳定的螯合物。但在生产过程中随着电镀液不断通电使用会使溶液pH接近中性甚至酸性,此时机膦酸盐中-OH不能充分电离,就使得形成铜配位螯合物不稳定,为此现在的无氰电镀液都特别强调溶液pH为碱性,且在9左右。同时还发现单一有机膦酸盐为配位剂的镀液在生产过程中如遇到复杂形状的工件时,在小电流密度区域往往会镀不上铜镀层或太薄,从而使得铜镀层与基体起泡。为了改善以单一有机膦酸盐为配位剂的镀液问题,有文献提出多种有机膦酸盐复配形成的电镀液。如中国发明专利(专利号:200610151222.9)公开了一种锌合金压铸件直接无氰电镀铜的方法,提出用有机膦酸如羟基乙叉二膦酸(HEDP)、氨基三亚甲基膦酸(ATMP)和乙二胺四亚甲基膦酸(EDTMP)构成电镀液可直接在锌合金压铸件基体上电镀铜。上述专利提到的三种有机膦酸盐也都是高pH下才能与铜离子形成稳定的铜配位螯合物。中国发明专利(专利号CN201610065348.8)公开了一种镁合金智能手机壳体的表面电镀铜的镀液,所述镀铜镀液提出的配位剂包含了焦磷酸盐、焦亚磷酸盐、羟基亚乙基二瞵酸和微量的植酸,其中焦磷酸盐和焦亚磷酸盐的含量分别达到240-260g/L和55-65g/L,显然是起主要配位剂作用,因此有可能在溶液pH值较低时有部分焦磷酸根易水解生成正磷酸根,从而使镀铜溶液失效。Acidic copper sulfate electroplating solution will undergo displacement reaction when direct copper plating on metal substrates such as iron, zinc or zinc alloy, magnesium alloy, aluminum, etc., resulting in poor bonding between the substrate and the copper coating. In order to obtain high binding force, alkaline cyanide plating solution is widely used in industry now. However, because cyanide has very high biological toxicity, it will cause major environmental and social safety hazards. The country has repeatedly issued industrial policies to eliminate cyanide-containing electroplating. Therefore, the development of cyanide-free copper plating technology is very urgent, but it is also a technical problem. The current research reports that the typical cyanide-free copper plating systems include alkaline pyrophosphate copper plating, sulfamate copper plating, citrate copper plating, organic phosphonate copper plating, organic carboxylate copper plating, etc. Chinese invention patent (patent number: 85103672) discloses a kind of alkaline cyanide-free electrolytic copper plating solution, proposes to use ethylene glycol as complexing agent. The copper plating bath with phosphorus-containing compounds in the structure as the main complexing agent is the most promising process in cyanide-free copper plating. For example, the pyrophosphate copper plating solution has been applied on some steel substrates. The copper coating obtained by the pyrophosphate system is dense, and the deposition rate is relatively high, and the copper coating can be deposited quickly in the low current density area. However, the copper plating solution with pyrophosphate as the main complexing agent has strict pH control (generally 8.13-8.19). fail. For this reason, some studies have proposed to replace the POP bond of pyrophosphate with PCP, thus developing gem-diphosphonic acid compounds composed of PCP bonds as copper complexing agents. Such compounds such as hydroxyethylidene diphosphonic acid (HEDP), amino Trimethylene phosphonic acid (ATMP), ethylenediamine tetramethylene phosphonic acid (EDTMP), aminomethylene diphosphonic acid (AMDP), etc., not only have the surface activity of pyrophosphate, but also have stronger copper than pyrophosphate The coordination ability will greatly improve the process performance of the plating solution. As early as the 1970s, the Institute of Coordination Chemistry of Nanjing University first systematically proposed the alkaline cyanide-free copper plating solution with hydroxyethylidene diphosphonic acid (HEDP) as the main complexing agent through research, and the hydroxyethylidene diphosphine The electrochemical performance of the alkaline cyanide-free copper plating solution of acid (HEDP) as the main complexing agent is also repeatedly mentioned in research papers (Fang Jingli, Ma Xinmao, Lu Weizhen. Chemical Journal of Universities, 1981, 2 (3): 285-293. Zheng Jingwu, Jiang Meiyan, Qiaoliang, et al., Study on the Effect of CO 3 2- P-Hydroxyethylidene Diphosphonic Acid Copper Plating Solution, Acta Physicochemical Sinica, 2008, 24(9): 1733-1738). The Chinese invention patent (Patent No. 201010136861.4) discloses an alkaline cyanide-free copper plating solution with aminomethylene diphosphonic acid (AMDP) as the main complexing agent. Compared with the molecular structure of HEDP, the -CH3 connected to the middle carbon position is removed, and the -NH2 group is added at the same time, which makes the coordination ability with copper ions stronger. This kind of plating solution using a single organic phosphonate as a complexing agent, when the pH value is relatively high (generally pH > 9), because the sufficient ionization of -OH in the organic phosphonate can make it complex with copper ions Bit open into a stable chelate. However, in the production process, as the electroplating solution is continuously energized, the pH of the solution will be close to neutral or even acidic. At this time, the -OH in the phosphonate cannot be fully ionized, which makes the formation of copper coordination chelates unstable. Therefore, the current Cyanide-free electroplating solutions all emphasize that the pH of the solution is alkaline, and it is around 9. At the same time, it is also found that when the plating solution with a single organic phosphonate as a complexing agent encounters workpieces with complex shapes in the production process, the copper coating is often not plated or is too thin in the low current density area, so that the copper coating and the substrate bubbly. In order to improve the problem of the plating solution using a single organic phosphonate as a complexing agent, some literatures propose an electroplating solution formed by compounding multiple organic phosphonates. For example, the Chinese invention patent (patent number: 200610151222.9) discloses a method for direct cyanide-free electroplating of zinc alloy die castings. ) and ethylenediaminetetramethylenephosphonic acid (EDTMP) constitute the electroplating solution, which can directly electroplate copper on the zinc alloy die casting substrate. The three organic phosphonates mentioned in the above patents can form stable copper coordination chelates with copper ions only at high pH. Chinese invention patent (patent number CN201610065348.8) discloses a plating solution for electroplating copper on the surface of a magnesium alloy smart phone casing. The complexing agent proposed in the copper plating solution includes pyrophosphate, pyrophosphite, Hydroxyethylene diphosphonic acid and trace amounts of phytic acid, in which the content of pyrophosphate and pyrophosphite reach 240-260g/L and 55-65g/L respectively, obviously act as the main complexing agent, so it is possible When the pH value of the solution is low, some pyrophosphate radicals are easily hydrolyzed to form orthophosphate radicals, thereby rendering the copper plating solution ineffective.
发明内容Contents of the invention
本发明提供了一种适用于宽pH和宽电流密度范围的无氰镀铜电镀液,解决了现有含氰化物镀液带来的环境污染严重,而不含氰化物镀液会导致镀层与基体结合力不佳,尤其在低电流密度区域镀层会出现鼓泡现象,镀液长期运行不稳定,适用的溶液pH范围窄等问题。The invention provides a cyanide-free copper electroplating solution suitable for wide pH and wide current density range, which solves the serious environmental pollution caused by the existing cyanide-containing plating solution, and the cyanide-free plating solution will cause the plating layer to be damaged. The substrate bonding force is not good, especially in the low current density area, there will be bubbling phenomenon in the coating, the long-term operation of the plating solution is unstable, and the pH range of the applicable solution is narrow.
本发明解决技术问题所采用的技术方案为:The technical solution adopted by the present invention to solve technical problems is:
一种适用于宽pH和宽电流密度范围的无氰镀铜电镀液,包括20-90g/L氨基甲叉二膦酸(AMDP),10-70g/L肌醇六磷酸(PA)或肌醇六磷酸钠,0.5-15g/L焦磷酸盐和3-25g/L铜盐。焦磷酸盐的添加量0.5-15g/L最佳,当其添加量低于0.5g/L时,镀层出现鼓泡现象;当其添加量高于15g/L时,镀层鼓泡甚至脱皮,镀层结合力均较差。A cyanide-free copper plating solution suitable for wide pH and wide current density range, including 20-90g/L aminomethylene diphosphonic acid (AMDP), 10-70g/L phytic acid (PA) or inositol Sodium hexaphosphate, 0.5-15g/L pyrophosphate and 3-25g/L copper salt. The best addition amount of pyrophosphate is 0.5-15g/L. When the addition amount is lower than 0.5g/L, the coating will bubble; The binding force is poor.
作为优选,所述铜盐是硫酸铜、氯化铜、碱式碳酸铜和硝酸铜中的至少一种。Preferably, the copper salt is at least one of copper sulfate, copper chloride, basic copper carbonate and copper nitrate.
作为优选,所述焦磷酸盐是焦磷酸钾和/或焦磷酸钠。Preferably, the pyrophosphate is potassium pyrophosphate and/or sodium pyrophosphate.
本发明同时提供了一种适用于宽pH和宽电流密度范围的无氰镀铜电镀液的制备方法,将氨基甲叉二膦酸、肌醇六磷酸或肌醇六磷酸钠,焦磷酸盐用水溶解混合,然后加入铜盐充分搅拌混合,再加入氢氧化钠或氢氧化钾调节溶液pH至6-13.6,搅拌溶解即得所述的无氰镀铜溶液。The present invention simultaneously provides a kind of preparation method of the cyanide-free copper plating electroplating solution that is applicable to wide pH and wide current density range, and aminomethylene diphosphonic acid, phytic acid or sodium phytic acid, pyrophosphate water Dissolving and mixing, then adding copper salt and fully stirring and mixing, then adding sodium hydroxide or potassium hydroxide to adjust the pH of the solution to 6-13.6, stirring and dissolving to obtain the cyanide-free copper plating solution.
作为优选,所述铜盐是硫酸铜、氯化铜、碱式碳酸铜和硝酸铜中的至少一种。Preferably, the copper salt is at least one of copper sulfate, copper chloride, basic copper carbonate and copper nitrate.
作为优选,所述焦磷酸盐是焦磷酸钾和/或焦磷酸钠。Preferably, the pyrophosphate is potassium pyrophosphate and/or sodium pyrophosphate.
作为优选,所述氨基甲叉二膦酸浓度为20-90g/L,肌醇六磷酸或肌醇六磷酸钠浓度为10-70g/L,焦磷酸盐浓度为0.5-15g/L,铜盐浓度为3-25g/L。Preferably, the concentration of aminomethylene diphosphonic acid is 20-90g/L, the concentration of phytic acid or sodium phytate is 10-70g/L, the concentration of pyrophosphate is 0.5-15g/L, and the concentration of copper salt The concentration is 3-25g/L.
本发明的有益效果为:The beneficial effects of the present invention are:
1、本发明所提供的无氰镀铜电镀液,适用pH范围是6-13.5,适用电流密度范围为0.2-4安培/平方分米。1. The applicable pH range of the cyanide-free copper plating solution provided by the present invention is 6-13.5, and the applicable current density range is 0.2-4 ampere/square decimeter.
2、以氨基甲叉二膦酸(AMDP)和肌醇六磷酸(PA)为铜复合配位剂,焦磷酸盐为辅助添加剂,发挥了各自的优点,形成了互补。以氨基甲叉二膦酸(AMDP)为主配位剂之一,在强碱性pH范围内(pH=9~13.5),与传统的HEDP配位剂体系和现有的镀液体系相比,不仅可以与铜形成更稳定的配位化合物,而且深镀能力比氰化物镀铜体系提高了34%。2. Aminomethylene diphosphonic acid (AMDP) and phytic acid (PA) are used as copper complex complexing agents, and pyrophosphate is used as auxiliary additives, which give full play to their respective advantages and form a complementarity. Aminomethylene diphosphonic acid (AMDP) is used as one of the main complexing agents, in the strong alkaline pH range (pH=9~13.5), compared with the traditional HEDP complexing agent system and the existing plating solution system , not only can form a more stable coordination compound with copper, but also the deep plating ability is increased by 34% compared with the cyanide copper plating system.
3、肌醇六磷酸在酸性范围内就能与许多金属离子形成稳定的配位化合物,现在常用作金属管道清洗剂或水质的除垢剂。因此以肌醇六磷酸(PA)为主配位剂之一,在弱碱性、中性甚至弱酸性的pH范围内(pH=6~9),与传统的HEDP配位剂体系和现有的镀液体系相比,都可以与铜形成更稳定的配位化合物。这不仅意味着在配制溶液时可以用宽的pH范围,而且也可以避免溶液使用过程中因pH值上下波动要不断调整甚至报废的问题,提高溶液操作容忍度,生产操作方便。3. In the acidic range, phytic acid can form stable coordination compounds with many metal ions, and is now commonly used as a cleaning agent for metal pipes or a descaling agent for water quality. Therefore, phytic acid (PA) is used as one of the main complexing agents, in the pH range of weakly alkaline, neutral or even weakly acidic (pH=6-9), and the traditional HEDP complexing agent system and the existing Compared with the plating solution system, it can form a more stable coordination compound with copper. This not only means that a wide pH range can be used when preparing the solution, but also can avoid the problem of constant adjustment or even scrapping of the solution due to the fluctuation of the pH value during the use of the solution, improve the tolerance of the solution operation, and facilitate production and operation.
4、焦磷酸盐体系所获的铜镀层致密,沉积速度也相对较高,在低电流密度区域也能较快沉积上铜镀层。因此以焦磷酸盐为辅助添加剂,与传统的HEDP配位剂体系和现有的镀液体系相比,不仅解决:复杂形状的工件电镀时,因电流密度分布不均匀导致在小电流密度区域镀不上铜镀层或太薄,从而使得铜镀层与基体起泡的问题;而且还可以避免溶液pH值较低时有部分焦磷酸根水解而使镀铜溶液失效的问题。4. The copper coating obtained by the pyrophosphate system is dense, and the deposition rate is relatively high, and the copper coating can be deposited quickly in the low current density area. Therefore, using pyrophosphate as an auxiliary additive, compared with the traditional HEDP complexing agent system and the existing plating solution system, not only solves: when complex-shaped workpieces are electroplated, due to uneven current density distribution, plating in small current density areas No copper plating layer or too thin, so that the copper plating layer and the substrate are foamed; and it can also avoid the problem that part of the pyrophosphate is hydrolyzed when the pH value of the solution is low, which makes the copper plating solution invalid.
5、该镀液配方简单,无毒,没有氰化物污染,在铁基体、镁合金、锌或锌合金基体、浸锌后的铝上直接镀铜,获得铜镀层与基体的结合力优异。5. The formula of the plating solution is simple, non-toxic, and free from cyanide pollution. Direct copper plating on iron substrates, magnesium alloys, zinc or zinc alloy substrates, and galvanized aluminum can obtain excellent bonding between the copper coating and the substrate.
附图说明Description of drawings
图1为霍尔槽阴极试片中,焦磷酸钾添加量对镀层结合力的影响。Figure 1 shows the effect of the amount of potassium pyrophosphate added on the bonding force of the coating in the Hall cell cathode test piece.
具体实施方式Detailed ways
下面结合具体实施例对本发明进行进一步描述,但本发明的保护范围并不仅限于此:The present invention is further described below in conjunction with specific embodiment, but protection scope of the present invention is not limited thereto:
实施例1Example 1
实施例1:Example 1:
按下列配比制备宽pH和宽电流密度适用范围的无氰镀铜电镀液。A cyanide-free copper plating solution with wide pH and wide current density applicable range is prepared according to the following ratio.
将称量好的亚甲基二膦酸和五水硫酸铜分别用去离子水溶解混合,在搅拌中加入氢氧化钾溶液并充分搅拌,如因氢氧化钾加入使pH过高可用硫酸调整至指定的pH值。Dissolve and mix the weighed methylene diphosphonic acid and copper sulfate pentahydrate with deionized water respectively, add potassium hydroxide solution while stirring and stir thoroughly, if the pH is too high due to the addition of potassium hydroxide, it can be adjusted to specified pH.
所得溶液中,调节溶液温度30℃,以阴极电流密度为1A/dm2在直径Φ2毫米钢丝基体上镀覆约5微米的铜镀层,电镀时间为15分钟,按ASTM B452-2002用缠绕法测试结合力完好。In the obtained solution, adjust the temperature of the solution to 30°C, and plate a copper coating of about 5 microns on the steel wire substrate with a diameter of Φ2 mm at a cathode current density of 1A/dm2. The electroplating time is 15 minutes, and the winding method is tested according to ASTM B452-2002. Bonding is intact.
实施例2:Example 2:
按下列配比制备宽pH和宽电流密度适用范围的无氰镀铜电镀液。A cyanide-free copper plating solution with wide pH and wide current density applicable range is prepared according to the following ratio.
将称量好的亚甲基二膦酸和二水氯化铜分别用去离子水溶解混合,在搅拌中加入氢氧化钠溶液并充分搅拌,如因氢氧化钾加入使pH过高可用硫酸调整至指定的pH值。Dissolve and mix the weighed methylene diphosphonic acid and copper chloride dihydrate with deionized water respectively, add sodium hydroxide solution during stirring and stir thoroughly, if the pH is too high due to the addition of potassium hydroxide, it can be adjusted with sulfuric acid to the specified pH.
所得溶液中,调节溶液温度50℃,以阴极电流密度为0.5A/dm2在直径Φ2毫米钢丝基体上镀覆约5微米的铜镀层,电镀时间为30分钟,按ASTM B452-2002用缠绕法测试结合力完好。In the obtained solution, adjust the temperature of the solution to 50°C, and plate a copper coating of about 5 microns on the steel wire substrate with a diameter of Φ2 mm at a cathode current density of 0.5 A/dm2. The electroplating time is 30 minutes, and the winding method is used according to ASTM B452-2002. The test binding is intact.
实施例3:Example 3:
按下列配比制备宽pH适用范围的无氰镀铜电镀液Prepare a cyanide-free copper plating electroplating solution with a wide pH range according to the following ratio
将称量好的亚甲基二膦酸和二水氯化铜分别用去离子水溶解混合,在搅拌中加入氢氧化钠溶液并充分搅拌,如因氢氧化钾加入使pH过高可用硫酸调整至指定的pH值。Dissolve and mix the weighed methylene diphosphonic acid and copper chloride dihydrate with deionized water respectively, add sodium hydroxide solution during stirring and stir thoroughly, if the pH is too high due to the addition of potassium hydroxide, it can be adjusted with sulfuric acid to the specified pH.
所得溶液中,调节溶液温度55℃,以阴极电流密度为2A/dm2在直径Φ2毫米钢丝基体上镀覆约5微米的铜镀层,电镀时间为7分钟,按ASTM B452-2002用缠绕法测试结合力完好。In the obtained solution, adjust the temperature of the solution to 55°C, and plate a copper coating of about 5 microns on the steel wire substrate with a diameter of Φ2 mm at a cathode current density of 2 A/dm2. The electroplating time is 7 minutes, and the winding method is tested according to ASTM B452-2002. Bonding is intact.
比较例1Comparative example 1
采用和实施例1相同的配方,不同的是焦磷酸钾添加量为0.4g/L。Adopt the same formula as Example 1, the difference is that the addition of potassium pyrophosphate is 0.4g/L.
比较例2Comparative example 2
采用和实施例1相同的配方,不同的是焦磷酸钾添加量为16g/L。Adopt the same formula as Example 1, the difference is that the addition of potassium pyrophosphate is 16g/L.
采用霍尔槽做实验,将实施例1-3,比较例I-2的镀液在钢基板上直接镀铜,然后通过酸性镀铜和镀镍使镀层加厚,并在300℃烘箱中加热30min后,迅速取出在水中淬中,观察不同电流密度区的镀层鼓泡现象。发现焦磷酸盐添加量在本发明所提出的0.5-15g/L内,镀层都没有鼓泡,而超出本发明提出的范围,则镀层有鼓泡甚至脱皮,特别是在低电流密度区域,结合力不好的现象更明显。为霍尔槽阴极试片中,焦磷酸钾添加量对镀层结合力的影响图见附图1。Using the Hall cell as an experiment, the plating solutions of Examples 1-3 and Comparative Example I-2 are directly plated copper on the steel substrate, and then the coating is thickened by acidic copper plating and nickel plating, and heated in a 300°C oven After 30 minutes, quickly take it out and quench it in water, and observe the bubbling phenomenon of the coating in different current density areas. It is found that the addition of pyrophosphate is within the 0.5-15g/L proposed by the present invention, and the coating does not have bubbling, but beyond the range proposed by the present invention, the coating has bubbling or even peeling, especially in the low current density area, combined with The phenomenon of poor strength is more obvious. In the Hall cell cathode test piece, the effect diagram of the addition of potassium pyrophosphate on the bonding force of the coating is shown in Figure 1.
以上仅列举了本发明的优选实施方案,本发明的保护范围并不限制于此,本领域技术人员在本发明权利要求范围内所作的任何改变均落入本发明保护范围内。The above only lists preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereto. Any changes made by those skilled in the art within the scope of the claims of the present invention all fall within the protection scope of the present invention.
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