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TW201440186A - 堆疊式晶圓雙倍資料率封裝 - Google Patents

堆疊式晶圓雙倍資料率封裝 Download PDF

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Publication number
TW201440186A
TW201440186A TW103102793A TW103102793A TW201440186A TW 201440186 A TW201440186 A TW 201440186A TW 103102793 A TW103102793 A TW 103102793A TW 103102793 A TW103102793 A TW 103102793A TW 201440186 A TW201440186 A TW 201440186A
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TW
Taiwan
Prior art keywords
memory die
die
wiring
package
redistribution layer
Prior art date
Application number
TW103102793A
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English (en)
Other versions
TWI525770B (zh
Inventor
Jun Zhai
Original Assignee
Apple Inc
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Application filed by Apple Inc filed Critical Apple Inc
Publication of TW201440186A publication Critical patent/TW201440186A/zh
Application granted granted Critical
Publication of TWI525770B publication Critical patent/TWI525770B/zh

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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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Abstract

本發明提供一種用於一PoP(封裝上封裝)封裝中之頂部封裝，其包括兩個堆疊之記憶體晶粒，其中一重新分佈層(RDL)在晶粒之間。該第一記憶體晶粒囊封於一囊封物中且耦接至該RDL之一頂部表面。一第二記憶體晶粒耦接至該RDL之一底部表面。該第二記憶體晶粒藉由一毛細管底部填充材料抑或一非導電膏而耦接至該RDL。該RDL包括在記憶體晶粒中之每一者與在晶粒的一周邊上耦接至該RDL之一或多個端子之間的佈線。

Description

堆疊式晶圓雙倍資料率封裝
本發明係關於用於封裝半導體裝置之半導體封裝及方法。更特定言之，本發明係關於用於記憶器晶粒之PoP(封裝上封裝)的頂部封裝。
封裝上封裝(「PoP」)技術已隨著對較低成本、較高效能、增加的積體電路密度及增加的封裝密度之需求在半導體工業中持續著而變得逐漸流行。隨著對愈來愈小封裝的急切要求增加，晶粒及封裝的整合(例如，系統單晶片(「SoC」)技術與記憶體技術之「預堆疊」或整合)允許較薄的封裝。此預堆疊已變為薄且細間距PoP封裝的關鍵組件。
減小封裝(例如，PoP封裝中的頂部封裝(記憶體封裝)或底部封裝(SoC封裝))之大小的一個限制為用於封裝中的基板之大小。已使用薄基板及/或空心基板(例如，層壓基板)來減小封裝之大小至某些位準。然而，可需要大小的進一步減小以便為下一代裝置提供甚至更小的封裝。
通常將一或多個記憶體晶粒置於PoP封裝之頂部封裝中。相對容易達成在頂部封裝中使用單一記憶體晶粒(例如，單一8GB(十億位元組)DDR(雙倍資料率)記憶體晶粒)(例如，至封裝上的端子之連接可靠且容易形成，且頂部封裝具有相對較薄的輪廓)。然而，單一記憶 體晶粒可不為更新且更強大裝置提供足夠能力。因此，需要更大記憶體能力的裝置通常需要在頂部封裝中之兩個或兩個以上晶粒(例如，兩個或兩個以上8GB DDR記憶體晶粒)。
將兩個記憶體晶粒置入頂部封裝中之典型組態將垂直地堆疊記憶體晶粒(例如，將一個記憶體晶粒直接堆疊在另一記憶體晶粒之上)。垂直地堆疊記憶體晶粒會減小頂部封裝之總厚度。然而，垂直地堆疊晶粒產生將兩個晶粒連接至封裝上的端子之問題。通常，使用記憶體晶粒的頂部(其中堆疊中的底部記憶體晶粒之至少部分突出到頂部記憶體晶粒之邊緣以外)與頂部封裝之基板上的端子之間的導線結合將晶粒連接至端子。然而，使用導線結合會增加頂部封裝之高度，因為導線結合路徑要間隔開以防止不同導線結合與每一記憶體晶粒短接。另外，導線結合可提供高阻抗路徑，高阻抗路徑減小記憶體晶粒與端子之間的信號完整性及/或電源完整性。克服關於導線結合之問題之可能的解決方案為在頂部封裝中提供自記憶體晶粒至端子之矽穿孔(TSV)。然而，提供TSV需要特殊的記憶體晶粒，增加若干額外的製程步驟，且相對較昂貴。
在某些實施例中，PoP封裝之頂部封裝包括兩個記憶體晶粒。第一記憶體晶粒可至少部分囊封於囊封物中。第一記憶體晶粒之底部表面可耦接至重新分佈層(RDL)。第二記憶體晶粒可耦接至RDL之底部表面。在一些實施例中，使用毛細管底部填充材料之回焊將第二記憶體晶粒耦接至RDL。在一些實施例中，使用與非導電膏之熱壓縮結合將第二記憶體晶粒耦接至RDL。
RDL可包括在第一記憶體晶粒與在晶粒的周邊上耦接至RDL之一或多個第一端子之間的佈線。RDL亦可包括在第二記憶體晶粒與在晶粒的周邊上耦接至RDL之一或多個第二端子之間的電分離佈線。第一 記憶體晶粒與第一端子之間的佈線可與第二記憶體晶粒與第二端子之間的佈線電隔離。RDL減小頂部封裝之總厚度，且改良頂部封裝中之信號及電源完整性。
100‧‧‧頂部封裝
100'‧‧‧頂部封裝
102A‧‧‧記憶體晶粒
102B‧‧‧晶粒
104‧‧‧囊封物
106‧‧‧重新分佈層(RDL)
106'‧‧‧重新分佈層(RDL)
108A‧‧‧連接件
108B‧‧‧連接件
110A‧‧‧佈線
110B‧‧‧佈線
112A‧‧‧端子
112B‧‧‧端子
114‧‧‧端子
將藉由參考當結合隨附圖式進行時對根據本發明之當前較佳但仍然說明性實施例之以下詳細描述更完整瞭解本發明之方法及設備的特徵及優點，其中：圖1描繪具有耦接至記憶體晶粒之重新分佈層的經囊封記憶體晶粒之橫截面表示。
圖2描繪耦接至第二記憶體晶粒之圖1之經囊封記憶體晶粒的實施例之橫截面表示。
圖3描繪具有與重新分佈層耦接之兩個偏移記憶體晶粒之頂部封裝的實施例之橫截面表示。
圖4描繪圖3中所描繪之實施例的仰視圖表示。
圖5描繪具有與重新分佈層耦接之兩個記憶體晶粒之頂部封裝的另一實施例之橫截面表示。
雖然本發明易受各種修改及替代形式之影響，但在圖式中以舉例方式展示了其特定實施例，且將在本文中對其進行詳細描述。該等圖式可不按比例繪製。應理解，該等圖式及對其之詳細描述並非意欲將本發明限於所揭示的特定形式，而正相反，本發明將涵蓋屬於附加申請專利範圍所界定的本發明之精神及範疇內的所有修改、等效物及替代物。
圖1至圖3描繪用於形成用於PoP(「封裝上封裝」)封裝中之頂部封裝之製程流程的實施例之步驟之橫截面表示。圖1描繪具有耦接至用於形成頂部封裝100之記憶體晶粒之重新分佈層的經囊封記憶體晶 粒之橫截面表示。記憶體晶粒102A至少部分囊封於囊封物104中。在某些實施例中，晶粒102A之底部表面由囊封物104曝露(未覆蓋)。舉例而言，晶粒102A可為半導體晶片，諸如導線結合晶粒或覆晶晶粒。在某些實施例中，晶粒102A為DDR(雙倍資料率)晶粒(例如，8GB DDR晶粒)。舉例而言，囊封物104可為聚合物或模製化合物，諸如包覆模製件或曝露之模製物。
在某些實施例中，重新分佈層(RDL)106耦接至晶粒102A。RDL 106可耦接至晶粒102A之底部表面。RDL 106亦可耦接至囊封物104。 RDL 106可包括若干材料，諸如(但不限於)PI(聚醯亞胺)、PBO(聚苯并噁唑)、BCB(苯并環丁烯)及WPR(晶圓光阻劑，諸如在商品名WPR下市售的清漆型酚醛樹脂及聚(羥基苯乙烯)(PHS)，WPR包括WPR-1020、WPR-1050及WPR-1201(WPR為日本東京JSR公司的註冊商標))。可使用此項技術中已知的技術(例如，用於聚合物沈積之技術)將RDL 106形成於晶粒102A及囊封物104上。
在某些實施例中，使用一或多個連接件108A耦接晶粒102A及RDL 106。連接件108A可包括將晶粒102A耦接至RDL 106中之佈線110A的定位襯墊或其他端子。舉例而言，連接件108A可包括用於將佈線110A耦接至晶粒102A之鋁或銅定位襯墊或塗佈有焊料或塗佈有Sn的定位襯墊。
在形成RDL 106之後，端子112A、112B可耦接至RDL，如圖1中所示。端子112A、112B可位於晶粒102A之周邊上。端子112A、112B可用以將頂部封裝100耦接至底部封裝(例如，SoC封裝)以形成PoP封裝。端子112A、112B可包括鋁、銅或另一合適導電材料。在一些實施例中，端子112A、112B塗佈有焊料或塗佈有Sn。在某些實施例中，端子112A經由佈線110A及連接件108A耦接至晶粒102A。
圖2描繪耦接至晶粒102A及RDL 106之晶粒102B之實施例的橫截 面表示。舉例而言，晶粒102B可為覆晶半導體晶片。在某些實施例中，晶粒102B為DDR(雙倍資料率)晶粒(例如，8GB DDR晶粒)。在一些實施例中，晶粒102B等同於晶粒102A。可翻轉晶粒102B以使得端子114(通常位於晶粒之底部上)可耦接至RDL 106上之連接件108B。端子114可為銅或鋁端子。在一些實施例中，端子114塗佈有焊料或塗佈有Sn。
在端子114與連接件108B接觸之後，可用材料116將晶粒102B耦接至RDL 106及晶粒102A，如圖3中所示。晶粒102B可耦接至RDL 106之底部表面(例如，RDL之與耦接至晶粒102A的表面對置之表面)。材料116可為電絕緣材料。在某些實施例中，在使RDL及晶粒接觸之前將材料116預施加至RDL 106或晶粒102B之表面。舉例而言，材料116可為聚合物或環氧樹脂材料，諸如底部填充材料或非導電膏。舉例而言，材料116可為用於覆晶結合製程中之毛細管底部填充材料，諸如快速固化底部填充材料或低剖面底部填充材料。通常，材料116為電絕緣材料，其在用於端子114及連接件108B中之材料的熔融溫度(例如，焊料熔融溫度)或低於該等熔融溫度的溫度固化。
在一些實施例中，若端子114為銅，則材料116為非導電膏，且使用熱壓縮結合製程(例如，覆晶熱壓縮結合製程)將端子114耦接(結合)至連接件108B。可使用之覆晶熱壓縮結合設備之實例為可購自Toray Engineering Co.,Ltd.(日本東京)之FC3000覆晶結合機。在一些實施例中，材料116為毛細管底部填充材料，且使用大規模回焊製程(例如，使用焊料回焊爐)將端子114耦接(結合)至連接件108B。
在一些實施例中，在耦接端子114與連接件108B之後將端子112A、112B耦接至RDL 106。用以耦接端子114與連接件108B之相同製程可用以將端子112A、112B耦接至RDL 106。舉例而言，可使用用以耦接端子114與連接件108B之相同大規模回焊製程來耦接端子 112A、112B。
將晶粒102B上之端子114耦接至RDL 106中之連接件108B會將晶粒102B耦接至RDL中之佈線110B。佈線110B可為晶粒102B提供至端子112B之連接，而佈線110A提供端子112A與晶粒102B之間的連接。舉例而言，佈線110A及佈線110B可為RDL 106中之金屬線。在某些實施例中，佈線110B與RDL 106中之佈線110A電隔離。電隔離佈線110A及佈線110B允許晶粒102A及晶粒102B分別經由端子112A及端子112B個別地連接至底部封裝。
圖1至圖3中所示之佈線110A及佈線110B在圖式中出於簡單起見僅展示為一個端子112A耦接至晶粒102A，且一個端子112B耦接至晶粒102B。應理解，對於耦接至每一記憶體晶粒之端子中的每一者而言存在額外佈線，且佈線可呈由熟習此項技術者所預期的任何組態。
如圖3中所示，晶粒102B自晶粒102A偏移。使晶粒102A與晶粒102B偏移會使連接件108A與連接件108B偏移(例如，在晶粒之間產生交錯凸塊型樣)。使連接件108A與連接件108B偏移允許RDL 106(例如，RDL 106為單一層RDL)中之佈線的單一層(例如，界定佈線110A及佈線110B之金屬線的單一層)。單一層RDL 106係可能的，因為連接件108A及108B不重疊，這允許佈線110A及佈線110B在相同層中而無用於晶粒102A及晶粒102B的在個別佈線之間的任何電連接件。
圖4描繪圖3中所描繪之頂部封裝100之實施例的仰視圖表示。佈線110A將連接件108A連接至端子112A，且佈線110B將連接件108B連接至端子112B。如圖4中所示，晶粒102A與晶粒102B之間的偏移使連接件108A與連接件108B偏移。因為連接件108A與連接件108B偏移(未重疊)，所以佈線110A及佈線110B兩者可皆在RDL 106中的相同層中而無電連接(短接)的分離佈線。
在一些實施例中，晶粒102A及晶粒102B未偏移，且連接件108A 及連接件108B對準(例如，連接件重疊)。圖5描繪頂部封裝100'的實施例的橫截面表示，其中晶粒102A及晶粒102B耦接而無在晶粒之間的偏移。因為連接件108A及108B在頂部封裝100'中重疊，所以RDL106'可包括兩個或兩個以上佈線層(例如，RDL 106'為2L(兩層)RDL)。多個佈線層(例如，佈線110A在一個層中且佈線110B在另一層中)可用以禁止個別佈線之間的電接觸(例如，使佈線110A與佈線110B電隔離)，且允許晶粒102A及晶粒102B分別經由端子112A及端子112B個別地連接至底部封裝。
如圖3及圖5中所示，RDL 106(或RDL 106')在頂部封裝100中的存在允許將晶粒102A、102B經由端子112A、112B結合及電耦接至底部封裝。端子112A、112B可位於晶粒102A、102B之周邊上。由於不必使用導線結合或使頂部封裝的高度增加之其他連接技術，使用RDL 106將晶粒102A、102B耦接至在晶粒之周邊上的端子112A、112B會減小頂部封裝100之總厚度。
另外，相比於通常用於記憶體封裝(例如，在PoP封裝中之頂部封裝)之基板，RDL 106可為相對較薄的層。舉例而言，單一層RDL可具有小於約10μm的厚度(例如，約5μm)，而典型有機基板具有約200μm或200μm以上的厚度。因此，在頂部封裝100中使用RDL 106會減小頂部封裝及含有頂部封裝之PoP封裝的總厚度，對於單一層RDL尤其如此。舉例而言，頂部封裝100可具有在約200μm與300μm之間的厚度，其中頂部封裝之厚度的實質上大部分係歸因於晶粒102A與晶粒102B之組合厚度。減小頂部封裝100之厚度可允許電路密度或封裝密度的增加，且改良使用頂部封裝之裝置的效能。
相比於使用導線結合技術形成的連接，在RDL 106中使用佈線110A、110B亦可降低晶粒102A、102B與端子112A、112B之間的阻抗。可經由在RDL 106中使用高導電率金屬線及/或減小晶粒與端子上 的連接件之間的路徑長度(例如，晶粒與端子之間的較短互連)而降低阻抗。導線結合通常包括環形或圓形路徑以允許連接至晶粒及基板的上表面。因此，在RDL中使用佈線可使路徑長度變短，此係因為提供了在晶粒與端子之間的更直接連接(例如，不需要圓形或環形路徑)。另外，晶粒102A、102B、連接件108A、108B、佈線110A、110B及/或端子112A、112B之間的耦接可比導線結合連接更強健。
相比於使用晶粒與端子之間的導線結合形成的頂部封裝，減小晶粒102A、102B與端子112A、112B之間的阻抗可在頂部封裝100(或頂部封裝100')中提供較佳信號及電源完整性。提供較佳信號及電源完整性可改良裝置效能。另外，在頂部封裝100中利用RDL 106可減小良率損失(相比於使用導線結合的頂部封裝)且藉由改良之良率而潛在地減小製造成本。
鑒於本描述，對於熟習此項技術者而言，本發明之各種態樣的進一步修正及替代性實施例將為顯而易見的。因此，本描述應被認為僅為說明性的且係為了教示熟習此項技術者執行本發明之目的。應理解，本文中展示且描述的本發明之形式應被視為目前較佳實施例。元件及材料可替代本文中說明及描述之元件及材料，各部分且製程可反轉，且可獨立利用本發明之某些特徵，以上所有部分對具有本發明之本描述之益處的熟習此項技術者將為顯而易見的。在不脫離如在以下申請專利範圍中所述的本發明之精神及範疇的情況下，可對本文中描述之元件作出改變。
100‧‧‧頂部封裝
102A‧‧‧記憶體晶粒
102B‧‧‧晶粒
106‧‧‧重新分佈層(RDL)
108A‧‧‧連接件
108B‧‧‧連接件
110A‧‧‧佈線
110B‧‧‧佈線
112A‧‧‧端子
112B‧‧‧端子

Claims (14)

  1. 一種半導體裝置封裝，其包含：一第一記憶體晶粒，其至少部分地囊封於一囊封物中，其中該第一記憶體晶粒之至少一個表面曝露；一重新分佈層，其耦接至該第一記憶體晶粒之該曝露之表面；一第二記憶體晶粒，其耦接至該重新分佈層；及複數個端子，其耦接至該重新分佈層，其中該等端子之一第一集合經由該重新分佈層耦接至該第一記憶體晶粒，且該等端子之一第二集合經由該重新分佈層耦接至該第二記憶體晶粒。
  2. 如請求項1之封裝，其中該等端子在該第一記憶體晶粒之一周邊及該第二記憶體晶粒之一周邊上耦接至該重新分佈層。
  3. 如請求項1之封裝，其中該重新分佈層包含在該第一記憶體晶粒與端子之該第一集合之間的一第一佈線及在該第二記憶體晶粒與端子之該第二集合之間的一第二佈線，且其中該第一佈線及該第二佈線電隔離。
  4. 如請求項1之封裝，其中該第二記憶體晶粒覆晶耦接至該重新分佈層。
  5. 如請求項1之封裝，其中該第二記憶體晶粒耦接於該重新分佈層之與該第一記憶體晶粒對置的一表面上。
  6. 如請求項1之封裝，其進一步包含該第一記憶體晶粒與該重新分佈層之間的連接件之一第一集合及該第二記憶體晶粒與該重新分佈層之間的連接件之一第二集合，其中連接件之該第一集合自連接件之該第二集合偏移。
  7. 一種半導體裝置封裝，其包含： 一模製材料，其中一第一記憶體晶粒至少部分地圍封於該模製材料中；一重新分佈層，其耦接至該模製材料之一底部表面；一第二記憶體晶粒，其耦接至該重新分佈層之一底部表面；及複數個端子，其在該第一記憶體晶粒之一周邊及該第二記憶體晶粒之一周邊上耦接至該重新分佈層的該底部表面；其中該重新分佈層包含佈線，該佈線將該第一記憶體晶粒耦接至該等端子之一第一集合，且將該第二記憶體晶粒耦接至該等端子之一第二集合。
  8. 如請求項7之封裝，其中該重新分佈層中之該佈線包含在該第一記憶體晶粒與端子之該第一集合之間的一第一佈線及在該第二記憶體晶粒與端子之該第二集合之間的一第二佈線，且其中該第一佈線及該第二佈線電隔離。
  9. 如請求項7之封裝，其中該佈線包含在該重新分佈層中之一單一佈線層。
  10. 如請求項7之封裝，其中端子之該第一集合與端子之該第二集合電隔離。
  11. 一種用於形成一半導體裝置封裝之方法，其包含：提供一第一記憶體晶粒，其至少部分地囊封於一囊封物中，其中該第一記憶體晶粒之至少一個表面曝露；將一重新分佈層耦接至該第一記憶體晶粒；將複數個端子耦接至該重新分佈層，其中該等端子之一第一集合經由該重新分佈層耦接至該第一記憶體晶粒；及將一第二記憶體晶粒耦接至該重新分佈層，其中該等端子之一第二集合經由該重新分佈層耦接至該第二記憶體晶粒。
  12. 如請求項11之方法，其進一步包含在該重新分佈層中提供佈線，其中該佈線包含在該第一記憶體晶粒與端子之該第一集合之間的一第一佈線及在該第二記憶體晶粒與端子之該第二集合之間的一第二佈線，且其中該第一佈線及該第二佈線電隔離。
  13. 如請求項11之方法，其進一步包含將該重新分佈層耦接至該囊封物。
  14. 如請求項11之方法，其中該重新分佈層經定位於該第一記憶體晶粒與該第二記憶體晶粒之間。
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