TW201413830A - Lift-off device and lift-off method - Google Patents

Abstract

This lift-off apparatus is provided with: a stage, which holds a substrate, and which rotates the held substrate; a mixed fluid forming apparatus that has a gas flow channel, which has a pressurized gas flowing therein, a treatment liquid flow channel, which has a treatment liquid flowing therein, and a nozzle, which is communicated with each of the flow channels, and which jets a mixed fluid containing the treatment liquid brought into a droplet state, said treatment liquid having been formed by mixing the pressurized gas and the treatment liquid; and moving apparatus, which relatively moves the mixed fluid forming apparatus with respect to the stage. The substrate having on the surface thereof a patterned resist and a metal layer film-formed on the resist is held on the stage in a state wherein the substrate is rotated, and the mixed fluid is jetted from the nozzle to the surface of the substrate rotated on the stage, thereby peeling the resist and the metal layer, and forming a patterned metal layer on the surface of the substrate.

Description

Peeling device and peeling method Field of invention

The present invention relates to a stripping apparatus and method for forming a patterned metal layer on a surface of a substrate by removing a resist layer from the surface of the substrate.

Background of the invention

Conventionally, in a stripping process in the process of manufacturing a semiconductor, a method of forming a circuit pattern formed of a metal layer or the like on a surface of a substrate to remove a resist layer disposed on the substrate is a method of immersing the substrate in a chemical solution (for example, Patent Document 1).

According to the method of Patent Document 1, a substrate having a patterned resist layer and a metal layer disposed on the resist layer is prepared, and the substrate is immersed in acetone which is a chemical liquid. The acetone impregnated into the substrate is immersed in the resist layer by the metal layer to swell the resist layer. By peeling off the resist layer and the metal layer from the substrate by this swelling effect, a patterned metal layer can be formed on the surface of the substrate.

In the method of removing the resist layer by the chemical liquid immersion type, a so-called batch type treatment in which a plurality of substrates are collected in one chemical liquid layer and processed is generally performed from the viewpoint of reducing the amount of the chemical liquid used.

Advanced technical literature Patent literature

Patent Document 1 Japanese Patent Laid-Open Publication No. Hei 5-136047

Summary of invention

However, in the method of removing the resist layer by the chemical liquid immersion type, there are also cases in which the swelling effect of the resist layer caused by the chemical liquid is mainly used, the resist layer is removed, and the batch type processing method is employed. Instead of the blade type which processes the substrate piece by piece, the removal speed of the resist layer is slow, and it takes time to remove the expected amount of the resist layer.

On the other hand, recently, the thinning of substrates has progressed, and it has been demanded to develop an efficient peeling apparatus and method thereof which can process such a thin substrate in a short time.

Accordingly, an object of the present invention is to solve the above problems, and to provide a vane peeling apparatus and a peeling method which can perform efficient peeling of a resist layer.

In order to achieve the above object, the present invention is constituted as follows.

According to a first aspect of the present invention, there is provided a peeling device comprising a stage, a mixed fluid forming device and a moving device, the stage holding a substrate and rotating the held substrate; the mixed fluid forming device having a gas flow path through which a pressurized gas passes, a process liquid flow path through which a treatment liquid passes, a flow path connected to each flow path, and a mixture of pressurized gas and a treatment liquid, which are formed by a liquidized solution It a nozzle for mixing fluid; the moving device moves the mixed fluid forming device relative to the table; and the peeling device has a substrate having a patterned resist layer and a metal layer formed on the resist layer on the surface The upper portion is held in a state of rotation, and the mixed fluid is ejected from the surface of the substrate which is rotated on the stage by the nozzle, whereby the resist layer and the metal layer are peeled off, and a patterned metal layer is formed on the surface of the substrate.

According to a second aspect of the present invention, there is provided a peeling apparatus according to the first aspect, wherein the peeling device sprays a mixed fluid on a surface of the substrate to cause the mixed fluid to strike a metal layer on the substrate, thereby causing damage to the metal layer. And peeling off the resist layer and the metal layer.

According to a third aspect of the present invention, there is provided a peeling apparatus according to the first aspect, wherein the peeling apparatus uses an organic solvent as a treatment liquid.

According to a fourth aspect of the present invention, there is provided a peeling device according to any one of the first aspect to the third aspect, wherein the peeling device is a blade type.

According to a fifth aspect of the present invention, there is provided a peeling method comprising the following processes: (1) a substrate having a patterned resist layer on a surface and a metal layer formed on the resist layer; (2) forming a mixed fluid containing the liquidized liquid by mixing the pressurized gas with the treatment liquid; and (3) spraying the surface of the substrate in a state of being rotated The fluid is mixed, the resist layer and the metal layer are stripped, and a patterned metal layer is formed on the surface of the substrate.

According to a sixth aspect of the present invention, there is provided a peeling method according to the fifth aspect, wherein in the process of forming a metal layer, a mixed fluid is sprayed on a surface of the substrate to cause the mixed fluid to strike the metal layer on the substrate. borrow Thus, the metal layer is damaged, and the resist layer and the metal layer are peeled off.

According to a seventh aspect of the present invention, there is provided a peeling method according to the fifth aspect, wherein the peeling method uses an organic solvent as a treatment liquid.

According to an eighth aspect of the present invention, there is provided a peeling method according to any one of the fifth aspect to the seventh aspect, wherein the peeling method is a blade type.

In the blade type peeling device and the peeling method, peeling of the resist layer can be performed efficiently.

1‧‧‧ peeling device

2‧‧‧Chemical chamber

3‧‧‧Leaning chamber

4‧‧‧Substrate transport device

5‧‧‧Substrate

6‧‧‧Warm arm

7,8‧‧

9,20‧‧‧ support devices

10,21‧‧‧ Mixed fluid forming device

11,22‧‧‧Mobile devices

12,23‧‧‧1st flow path

13,24‧‧‧2nd flow path

14‧‧‧Nozzles

15,26‧‧‧Compressed gas supply

16‧‧‧Processing fluid supply source

17‧‧‧Rotary axis

18,28‧‧‧ Container

19,29‧‧‧Pipe

27‧‧‧ pure water supply source

30‧‧‧Rotary axis

31‧‧‧Resist layer

32‧‧‧metal layer

33‧‧‧ crack

34‧‧‧ circuit graphics

35‧‧‧Mamma

A‧‧‧ Convergence location

B‧‧‧ Confluence

C _L ‧‧‧ Pressure rises

P‧‧‧impact pressure

S1-S7‧‧‧ steps

V ₀ , V _F ‧‧‧ speed

X, Y, Z‧‧ Direction

The above aspects and features of the present invention are set forth in the description which follows in conjunction with the preferred embodiments of the appended drawings.

Fig. 1 is a top plan view of a peeling device according to an embodiment of the present invention.

Figure 2 is a cross-sectional view of the chemical chamber of the stripping device of Figure 1.

Figure 3 is a cross-sectional view of the rinsing chamber of the stripping device of Figure 1.

Figure 4 is a flow chart showing the stripping process performed by the stripping device of Figure 1.

5(a) to 5(e) are explanatory views of the principle of peeling off the resist layer and the metal layer from the substrate.

6(a) to 6(d) are explanatory views of the action of the mixed fluid on the resist layer and the metal layer.

Form for implementing the invention

Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

Fig. 1 is a top view of a peeling device 1 according to an embodiment of the present invention. The peeling device 1 includes a chemical chamber 2, a rinse chamber 3, and a substrate transfer device 4.

In the chemical chamber 2, the surface of the substrate 5 is patterned to form a patterned metal layer. In the rinsing chamber 3, the substrate subjected to patterning in the chemical chamber 2 is subjected to a surface cleaning treatment (so-called rinsing treatment) for removing impurities remaining on the surface of the substrate 5. The substrate transfer device 4 is a device that transports the substrate 5 from the chemical chamber 2 to the rinsing chamber 3. The substrate transfer device 4 has a rotary grip arm 6 that grips the substrate 5 with a front end portion. The front end of the grip arm 6 is configured to be movable in a section between the stage 7 in the chemical chamber 2 on which the substrate 5 is placed and the stage 8 in the rinsing chamber 3. In addition, in FIG. 1, only the structure required is illustrated, and other structures are expediently omitted.

Next, the internal structure of each of the two chambers of the peeling device 1 configured as described above, the keying chamber 2, and the rinsing chamber 3 will be described.

2 is a cross-sectional view showing the structure of the device inside the chemical chamber 2. A stage 7, a table support device 9, a mixed fluid forming device 10, and a moving device 11 are provided in the chemical chamber 2.

The stage 7 transports the substrate 5 to the stage on which the substrate 5 in the chemical chamber 2 is placed and held by a transfer device (not shown). The stage supporting device 9 has a function of supporting the table 7 and rotating the table 7 around the rotating shaft 17 extending in the vertical direction. The mixed fluid forming apparatus 10 is disposed above the stage 7 and mixes the gas (N ₂ in the present embodiment) pressurized with the surface of the substrate 5 placed on the stage 7 with the treatment liquid (in the present embodiment, IPA (different) An organic solvent such as propanol) is formed by spraying a mixed fluid containing a liquidized solution. The mobile device 11 is a device that moves the mixed fluid forming device 10. The moving device 11 moves the mixed fluid forming device 10 along the direction along the surface of the substrate 5 (in the X direction in the present embodiment), so that the injection position of the mixed fluid can be adjusted. Further, the particle size of the liquidized liquid to be treated in the present embodiment is, for example, 2 μm to 20 μm.

The mixed fluid forming apparatus 10 in the chemical chamber 2 has a first flow path (gas flow path) 12 through which pressurized gas passes, a second flow path (process liquid flow path) through which the treatment liquid passes, and communication Each of the flow paths 12 and 13 is formed by mixing a pressurized gas and a treatment liquid to form a nozzle 14 that is sprayed with a mixed fluid of the liquidized liquid. The first flow path 12 is connected to a pressurized gas supply source 15 that holds a pressurized gas, and the pressurized gas can be supplied from the pressurized gas supply source 15 as needed. In the present embodiment, the pressure of the supplied pressurized gas is set to, for example, 0.2 MPa to 0.5 MPa. Further, the second flow path 13 is similarly connected to the processing liquid supply source 16 that holds the processing liquid, and if necessary, supplies the organic solvent as the processing liquid from the processing liquid supply source 16. The downstream end of the first flow path 12 and the downstream end of the second flow path 13 intersect at the meeting point A (the upstream end of the nozzle 14), and the mixed fluid is formed at the meeting point A.

Further, in the mixed fluid forming apparatus 10, the first flow path 12 and the nozzle 14 are arranged to extend in the vertical direction. On the other hand, the second flow path 13 is disposed to extend in the horizontal direction perpendicular to the extending direction of the first flow path 12 and the nozzle 14. According to this configuration, by mixing the pressurized gas supplied to the lower side of the lead direction with the processing liquid supplied in the horizontal direction at the meeting point A, a mixed fluid containing the liquidized solution can be formed. Here, the vertical velocity of the pressurized gas supplied to the first flow path 12 is set to be substantially larger than the horizontal velocity of the processing liquid supplied to the second flow path 13. Therefore, the mixed fluid mixed with these is also ejected from the nozzle 14 in the vertical direction at a rapid speed which is approximately the same as the speed at which the pressurized gas is supplied.

Further, the position of the nozzle 14 of the mixed fluid forming device 10 is set by the moving device 11 so that the injection position of the mixed fluid ejected from the nozzle 14 is eccentric from the rotation axis 17 of the surface of the substrate 5.

A container 18 that covers the substrate 5 and the stage 7 is placed in the chemical chamber 2, and an opening provided at the bottom of the container 18 as one end and the other end is connected to the pipe 19 of the processing liquid supply source 16. The container 18 is configured to prevent the mixed fluid sprayed from the mixed fluid forming device 10 and to be scattered outside the chemical chamber 2, and to deliver the concentrated mixed fluid to the piping 19. The piping 19 collects the mixed fluid concentrated in the container 18 and filters the components (metal or the like) other than the processing liquid with a filter device not shown, and then sends it to the processing liquid supply source 16. Thereby, the treatment liquid can be reused, and the filtered metal can be reused.

Figure 3 is a cross-sectional view showing the structure of the apparatus inside the rinsing chamber 3. As shown in FIG. 3, the internal structure of the chamber 3 is substantially in common with the internal structure of the aforementioned chemical chamber 2. Specifically, the stage 8 is provided in the rinsing chamber 3, the stage supporting device 20, the mixed fluid forming device 21, and the moving device 22. The table 8, the table supporting device 20, the mixed fluid forming device 21, and the moving device 22 correspond to the table 7, the table supporting device 9, the mixed fluid forming device 10, and the moving device 11, respectively, in the chemical chamber 2. Since the structures and functions are the same as those described above, the detailed description thereof will be omitted. In the mixed fluid forming device 21, the first flow path 23 is connected to the first flow path 12 in the chemical chamber 2 in the same manner. The pressurized gas supply source 26 of the gas (for example, N ₂ ) is different from the second flow path 13 in the chamber 2, and is connected to the pure water supply source 27 having pure water. That is, a mixed fluid of pressurized gas and pure water is formed as a mixed fluid formed at the junction B of the mixed fluid forming device 21. Thus, the mixed fluid forming device 21 in the rinsing chamber 3 and the mixed fluid forming device 10 in the chemical chamber 2 have different compositions of the injected mixed fluid, and the shapes of the internal flow paths and the nozzles are common.

Further, a container 28 corresponding to the container 18 of the chemical chamber 2 and a pipe 29 corresponding to the pipe 19 of the chemical chamber 2 are provided in the elution chamber 3. Since the container 28 is common to the container 18 of the chemical chamber 2, the description thereof will be omitted. The pipe 29 is not connected to the pure water supply source 27 except for the pipe 19 of the chemical chamber 2, and only the used mixed fluid is discharged. This is because the mixed fluid used in the rinsing chamber 3 does not contain a material to be reused such as a treatment liquid.

The procedure for the peeling treatment by the peeling device 1 including the chemical chamber 2 and the rinsing chamber 3 configured as described above will be described using a flowchart of FIG.

First, the substrate 5 is carried into the chemical chamber 2 by using a transfer device (not shown) (step S1). The substrate 5 loaded therein is placed and held on the stage 7 in the chemical chamber 2 as shown in Fig. 2 .

Next, the stage 7 holding the substrate 5 is rotated (step S2). Specifically, the substrate supporting device 9 rotates the stage 7 around the rotating shaft 17. Thereby, the substrate 5 placed on the stage 7 is also rotated about the common rotating shaft 17.

Next, the mixed fluid is ejected from the substrate 14 in the state of being rotated from the nozzle 14 of the mixed fluid forming device 10 (step S3). Specifically, in the mixed fluid forming device 10, the pressurized gas and the treatment liquid are mixed to form a mixed fluid containing the dropletized treatment liquid, and the mixed fluid is used as the ejection port from the nozzle 14 toward the substrate 5 located below. injection. At this time, including the meridian The dropletized mixed fluid is ejected while the substrate 5 is rotated, and the ejecting position of the mixed fluid is eccentric from the rotating shaft 17, and further, while the moving device 11 moves the mixed fluid forming device 10 in the horizontal direction, the movement is performed. injection. According to this ejection method, the mixed fluid containing the liquidized solution can be uniformly sprayed onto the entire surface of the substrate 5.

Here, the patterning direction of the substrate 5 by the ejection of the mixed fluid will be described using FIG. As shown in FIG. 5(a), the substrate 5 is formed with a patterned resist layer 31 and a metal layer 32 formed on the resist layer 31 at the time of loading into the chemical chamber 2. When the mixed liquid containing the liquidized liquid is sprayed from above on the substrate 5, the liquidized liquid of the mixed fluid is hit as the outermost metal layer 32, thereby causing damage. Thereby, as shown in FIG. 5(b), a crack 33 which is a minute crack is formed in the metal layer 32. When the crack 33 is formed, the mixed fluid can reach the resist layer 31 inside the metal layer 32 by the crack 33. When the mixed fluid reaches the resist layer 31, as shown in Fig. 5(c), the resist layer 31 is swollen by the swelling action of the organic solvent in the mixed fluid. When the resist layer 31 is swollen, the adhesion between the substrate 5 and the resist layer 31 can be lowered. In this state, when the ejection of the mixed fluid to the substrate 5 is continued, the resist layer 31 can be physically peeled off from the substrate 5. At this time, the metal layer 32 located around the resist layer 31 is simultaneously peeled off from the substrate 5. Thereby, as shown in FIG. 5(d), only the metal layer 32 directly attached to the substrate 5 remains on the substrate 5. The metal layer 32 retains a portion of the metal layer that is not required for the circuit pattern 34 of the burr 35, and the burr 35 can be physically removed by continuing to spray the mixed fluid. Therefore, as shown in Fig. 5(e), only the desired circuit pattern 34 can be retained. In addition, here, one of the injuries forms a crack. In the case of 33, the form of the damage is not limited to the crack 33, and in other forms, the peeling of the resist layer 31 by the swelling action of the above organic solvent may be performed.

Here, the mechanism by which the resist layer 31 and the metal layer 32 on the substrate 5 can be peeled off will be further described using FIG. 6. FIG 6 (a), when the metal layer by the resist layer 31 from the top 32 to the fluid mixture injection velocity V _0, the process of the droplet of the fluid mixture of liquid already impinging metal layer 32, FIG. 6 As shown in (b), the impact pressure P is generated in the metal layer 32 and the resist layer 31, and the pressure rise C _L in the vertical direction due to the resultant force of the reflected waves is generated. Thereby, as shown in FIG. 6(c), the liquidized liquid is expanded in the horizontal direction at the speed V _F . Thereby, the force in the horizontal direction acts to exert a peeling force in the horizontal direction of the metal layer 32 and the resist layer 31 disposed thereunder. In the peeling device 1 of the present embodiment, the peeling force in the horizontal direction and the swelling effect of the resist layer 31 by the organic solvent in the mixed fluid are combined to promote peeling of the resist layer 31 and the metal layer 32. Therefore, in the peeling apparatus 1 of the present embodiment, the treatment liquid removing method of the chemical liquid immersion type which removes the resist layer mainly by the swelling effect of the resist layer of the chemical liquid can be used, and the treatment liquid to be used can be reduced. The amount and the peeling force of the equivalent or more resist layers 31 can be achieved.

Further, the ejection of the mixed fluid in the above step S3 is performed in a state where the substrate 5 is rotated. Therefore, the metal layer 32 removed by the mixed fluid does not stay on the surface of the substrate 5, and the centrifugal force caused by the rotation of the substrate 5 can be scattered to the periphery of the substrate 5 together with the used mixed fluid. That is, it is possible to suppress the removed metal layer 32 from adhering to the surface of the substrate 5. Further, the used mixed fluid scattered around the substrate 5 is collected in the container 18 and collected into the piping. 19. As described above, the treatment liquid contained in the mixed fluid can be reused, and the metal layer 32 can be reused for other purposes. Thus, by operating the various components contained in the used mixed fluid, the running cost of the peeling device 1 can be reduced.

After the ejection of the mixed fluid of the step S3 is completed, the ejection of the mixed fluid is stopped, and at the same time, the rotation of the substrate 5 is stopped.

By performing the steps S1-S3 above, the patterning process of forming the patterned metal layer on the surface of the substrate 5 is completed.

After the patterning process is completed, the substrate 5 is then carried into the rinsing chamber 3 (step S4). Specifically, the substrate transfer device 4 holds the substrate 5 of the stage 7 placed in the chemical chamber 2 at the front end of the grip arm 6. Thereafter, the grip arm 6 is rotated while holding the substrate 5, and the substrate 5 is moved above the stage 5 in the rinsing chamber 3. Thereafter, as shown in FIG. 3, the substrate 5 is placed on the stage 8, and the holding by the holding arm 6 is released.

Next, the stage 8 holding the substrate 5 is rotated (step S5). The substrate supporting device 20 rotates the table 8 around the rotating shaft 30, and the substrate 5 placed on the table 8 also rotates around the common rotating shaft 30.

Then, the substrate 5 in the rotated state is ejected from the nozzle 25 of the mixed fluid forming device 21 (step S6). The mixed fluid forming means 21 from the rinsing chamber 3 sprays a mixed fluid of pressurized gas and pure water as described above. When such a mixed fluid is sprayed onto the surface of the substrate 5 in a state of being rotated, impurities such as particles remaining on the surface of the substrate 5 are cleaned by purification of pure water, and are removed from the surface of the substrate 5 to the periphery thereof. .

After the spraying of the mixed fluid is completed, the surface of the substrate 5 is then dried (step S7). Specifically, a gas (e.g., N ₂ ) is sprayed on the surface of the substrate 5 in a state of being rotated using a gas ejecting apparatus (not shown) different from the mixed fluid ejecting apparatus 21. By spraying such a gas, the liquid remaining on the surface of the substrate 5 can be scattered around the substrate 5, and the surface of the substrate 5 can be dried. The liquid scattered around the substrate 5 is concentrated in the container 28 and recovered to the piping 29 for discharge.

By the above steps S5-S7, the rinsing treatment of the surface of the substrate 5 on which the patterned metal layer is formed is completed.

As described above, by performing the steps S1 to S7, the patterning process and the rinsing process of the surface of the substrate 5 are performed, and the peeling process of the peeling device 1 is completed.

According to the peeling apparatus 1 of the present embodiment, the substrate 5 having the patterned resist layer 31 on the surface and the metal layer 32 formed on the resist layer 31 is held on the stage 7 in a state of being rotated, and the substrate is held. The surface of the fifth surface is sprayed from the nozzle 14 by mixing the pressurized gas and the treatment liquid to form a mixed fluid containing the liquidized solution, and the resist layer 31 and the metal layer 32 are peeled off to form a surface on the substrate 5. There is a patterned metal layer 32 (circuit pattern 34). Thereby, since the resist layer 31 can be peeled off by the physical peeling force by the peeling force in the horizontal direction by the liquid-repellent liquid in the mixed fluid, the resist layer 31 can be performed in a short time. The efficient blade peeling device 1 is removed. Further, the amount of the treatment liquid to be used can be reduced as compared with the method of removing the resist layer by the chemical liquid immersion type.

Further, since the organic solvent is used as the treatment liquid, the swelling effect of the organic solvent can be utilized in conjunction with the peeling of the resist layer 31, so that the more efficient removal of the resist layer 31 can be performed.

Further, the mixture is sprayed from the nozzle 14 of the mixed fluid forming device 10 The fluid impinges on the surface of the substrate 5 at a high speed by the propulsive force of the pressurized gas supplied at a high speed downward in the vertical direction. Thereby, the burrs 35 of the metal layer 32 which are generated when the resist layer 31 is peeled off can be effectively removed.

Further, since the mixed fluid is ejected while the substrate 5 is rotated, the metal layer 32 removed by the mixed fluid can be scattered around the substrate 5 together with the used mixed fluid, so that reattachment to the substrate 5 can be suppressed. The surface.

Further, in the chemical chamber 2, the used mixed fluid is recovered in the pipe 19, and impurities such as metal are filtered, and then sent to the processing liquid supply source 16. Thereby, the treatment liquid and the metal such as the organic solvent contained in the used mixed fluid can be reused, and the running cost of the peeling device 1 can be reduced.

Further, the structure of the peeling device 1 is a vane type two-chamber system, and the processing process to be carried out can be simplified, and the entire device can be miniaturized.

By using the peeling apparatus 1 of the above-described embodiment, the substrate 5 is subjected to a peeling treatment, and as a result, the removal rate of the resist layer 31 can be increased by 5 to 10 times as compared with the chemical liquid-immersed resist layer removing method.

Further, in the present embodiment, a case has been described in which the above-described case is formed by mixing the pressurized gas and the treatment liquid to form a treatment liquid containing the dropletized liquid when the surface of the substrate 5 is patterned. The mixed fluid is sprayed. For example, the following method is also considered. The foregoing method uses a plunger type pump, and replaces the aforementioned mixed fluid by spraying non-droplet high-pressure water (mixture of pressurized gas and pure water). The resist layer and the metal layer (hereinafter referred to as high pressure mode) are mainly removed by the physical force of the direct direction of water.

However, according to the high pressure method, since the resist layer 31 is peeled off mainly by the physical force of the vertical direction of water, the pressure of the water needs to be kept very high. Therefore, liquid leakage occurs in the joint portion or the like in the spray device for spraying water, or a large amount of particles are generated from the spray device, and the substrate 5 or the metal layer 32 is excessively damaged by the water sprayed from the spray device. The situation. Further, when the pressure of the water sprayed in the high pressure mode is constant, since the peeling force of the resist layer gradually decreases with time, the resist layer 31 cannot be effectively removed. Therefore, in order to maintain the peeling force of the resist layer 31, it is necessary to spray while appropriately changing the pressure of the water. Further, since the plunger type pump structure is employed, the sliding portion of the pump structure is deteriorated by use, and therefore the pressure of the sprayed water is weakened. Moreover, since the used fluid path is ejected by the ejection, it cannot be reused.

In the high-pressure method, as described above, the peeling device 1 according to the present embodiment is peeled off by the physical peeling force including the peeling force in the horizontal direction caused by the liquidized solution in the mixed fluid. Since the resist layer 31 can suppress the pressure of the injected fluid to a low pressure (about 1/30 of that of the high pressure method), and can achieve a peeling force equivalent to that of the plunger method, and even if the injection is performed at a certain pressure, The peeling force of the resist layer 31 is not lowered and can be maintained. Since the patterning process can be performed at a low pressure, damage to the substrate 5 or the metal layer 32 can be suppressed, and it can also correspond to a thin substrate 5 (for example, a thickness of 150-200 μm). Further, it is possible to suppress the occurrence of leakage of the joint portion in the injection device and suppress the generation of particles. Further, since the mixed fluid forming device 10 of the above configuration is used instead of the plunger type pump structure, there is no ejection fluid caused by the deterioration of the sliding portion. The problem of reduced pressure. Therefore, the peeling effect of the resist layer 31 can be stabilized, and the reliability of the peeling device 1 can be improved. Further, in the peeling device 1, since the circulation recovery method using the pipe 19 is employed, the used mixed fluid can be reused.

Further, the present invention is not limited to the above embodiment, and may be implemented in other various aspects. For example, in the present embodiment, the case where the substrate 5 is not specially treated before the mixed fluid is sprayed on the substrate 5 is described, but it is not limited to this case, and may be in the chemical chamber before the mixed fluid is sprayed. The substrate 5 is immersed in an organic solvent or the like in 2 . In this manner, the substrate 5 and the like are immersed in an organic solvent or the like to be previously swollen, and in the subsequent spraying process of the mixed fluid, the peeling force of the jet of the mixed fluid can be improved. Thereby, a more efficient peeling process can be implemented.

Further, in the present embodiment, the case where N _{2 is} used as the pressurized gas and the organic solvent is used as the treatment liquid has been described, but the present invention is not limited thereto. For example, an inert gas or the like may be used as the pressurized gas, and other chemical liquids other than the organic solvent, water, or the like may be used as the treatment liquid.

Further, in the present embodiment, the case where the mixed fluid of the pressurized gas and the water is combined is not described in the patterning process or the rinsing process, but the present invention is not limited to this case, and other types may be used. Wash treatment instead.

Further, in the present embodiment, the case where the peeling device 1 is constituted by the two chambers of the chemical chamber 2 and the rinsing chamber 3 has been described, and the number of the chambers is not limited thereto, and may be, for example, one or three. More than one chamber is formed.

Moreover, in the present embodiment, the substrate transfer device 4 is transported. The case where the form is the method shown in Fig. 1 has been described, but it is not limited to this case, and various other transfer forms may be employed.

Further, by combining any of the above-described various embodiments as appropriate, it is possible to exhibit the respective effects.

The present invention is applicable to a peeling apparatus and a method thereof for forming a patterned metal layer on a surface of a substrate by removing a resist layer from the surface of the substrate.

The present invention is fully described in connection with the preferred embodiments, and various modifications and changes will be apparent to those skilled in the art. Such variations and modifications are to be understood as included within the scope of the invention as set forth in the appended claims.

The disclosure of the specification, drawings, and claims of Japanese Patent Application No. 2012-156470, filed on Jul. 12, 2012, is hereby incorporated by reference.

2‧‧‧Chemical chamber

5‧‧‧Substrate

7‧‧‧

9‧‧‧ support device

10‧‧‧ Mixed fluid forming device

11‧‧‧Mobile devices

12‧‧‧1st flow path

13‧‧‧2nd flow path

14‧‧‧Nozzles

15‧‧‧Compressed gas supply

16‧‧‧Processing fluid supply source

17‧‧‧Rotary axis

18‧‧‧ container

19‧‧‧Pipe

A‧‧‧ Convergence location

X, Y, Z‧‧ Direction

Claims (8)

A peeling device comprising: a table for holding a substrate and rotating the substrate to be held; a mixed fluid forming device having a gas flow path through which a pressurized gas passes, a treatment liquid flow path through which the treatment liquid passes, and communication a nozzle that includes a mixed fluid of the liquidized processing liquid formed by mixing the pressurized gas and the treatment liquid, and a moving device that allows the mixed fluid forming device to move relative to the table; a substrate having a patterned resist layer and a metal layer formed on the resist layer on the surface, which is held in a rotating state on the stage, and the surface of the substrate is rotated from the nozzle to the stage. The mixed fluid is sprayed to peel off the resist layer and the metal layer to form a patterned metal layer on the surface of the substrate. The stripping device of claim 1, wherein the mixed fluid is sprayed on the surface of the substrate to cause the mixed fluid to strike the metal layer on the substrate, thereby causing damage to the metal layer and stripping the resist layer and the metal layer. The stripping device of claim 1, wherein the treatment liquid is an organic solvent. A peeling device according to any one of claims 1 to 3, which is of the blade type. A stripping method comprising the following steps: (1) maintaining a substrate having a patterned resist layer and a metal layer formed on the resist layer in a state of being rotated; (2) The pressurized gas is mixed with the treatment liquid to form a containment industry a mixed fluid of the dropletized treatment liquid; and (3) spraying the mixed fluid on the surface of the substrate in a state of being rotated, stripping the resist layer and the metal layer, and forming a patterned metal layer on the surface of the substrate. The stripping method of claim 5, wherein in the process of forming the metal layer, the mixed fluid is sprayed on the surface of the substrate, causing the mixed fluid to strike the metal layer on the substrate, thereby causing damage to the metal layer, and stripping the resist layer and the metal Floor. The stripping method of claim 5, wherein the treating liquid is an organic solvent. The peeling method according to any one of claims 5 to 7, which is of the blade type.