TW201327810A - Nitride semiconductor structure and fabricating method thereof - Google Patents

Abstract

A nitride semiconductor structure and a fabricating method thereof are provided. The structure includes a substrate, a nitride buffer layer, a first nitride semiconductor layer and a first mask layer. The nitride buffer layer is disposed on the substrate. The first nitride semiconductor layer is disposed on the nitride buffer layer. The first mask layer is disposed between the first nitride semiconductor layer and the substrate. The first mask layer has a plurality of nano-porous formed therein, and distribution density of the nano-porous ranges between 3.5*10<SP>13</SP>/cm<SP>2</SP> and 8.4*10<SP>13</SP>/cm<SP>2</SP>.

Description

Nitride semiconductor structure and method of manufacturing same

The present application relates to a nitride semiconductor structure and a method of fabricating the same.

A light-emitting diode (LED) is a light-emitting element made of a compound semiconductor, which emits energy by combining electrons and holes in a semiconductor material, and converts electrical energy into light, and thus has been widely used. It is used in various fields. In particular, GaN-based blue LEDs with yellow phosphors can be used to obtain white light, which not only performs better than traditional lamps or bulbs, but also consumes more power than conventional lamps. The lamp or bulb should come low. In addition, the life of the LED is longer than that of a conventional lamp or bulb.

One of the key steps in germanium-based GaN-based LEDs is epitaxial gallium nitride (GaN) epitaxy on germanium substrates. The problem that must be overcome in material properties is the lattice constant between different materials (lattice). Constant) and the mismatch of thermal expansion coefficients. The mismatch in lattice constants causes defects to form at the interface between the material on the substrate and the substrate, and the electron hole pair (EHP) that absorbs light affects the luminous efficiency. In the high-temperature epitaxial process, the mismatch of the thermal expansion coefficient causes the material to shrink to a different degree when the epitaxial material is cooled.

It can be seen from the above that since the lattice constant difference and the thermal expansion coefficient of the tantalum substrate and the gallium nitride epitaxial film material are too large, the maximum lattice mismatch ratio (>17%) and the thermal expansion coefficient mismatch ratio (54%) make Gallium nitride is prone to lattice misalignment during epitaxial growth, which causes the grown gallium nitride to produce a large number of defects (high defect density) and lead to poor quality of the gallium nitride epitaxial layer, which in turn affects the semiconductor. The luminous efficiency of the light-emitting element.

The present application provides a nitride semiconductor structure and a method of fabricating the same that can reduce the defect density of a nitride semiconductor layer.

The present application proposes a nitride semiconductor structure including a substrate, a nitride buffer layer, a first nitride semiconductor layer, and a first defect blocking layer. The nitride buffer layer is on the substrate. The first nitride semiconductor layer is on the nitride buffer layer. The first defect blocking layer is located between the first nitride semiconductor layer and the substrate, wherein the first defect blocking layer has a plurality of nanopores, and the distribution density of the nanopores is 3.5×10 ¹³ /cm ² to 8.4×10 ¹³ /cm ² .

The present application further provides a method of fabricating a nitride semiconductor structure comprising the following steps. A nitride buffer layer is formed on the substrate. A first defect barrier layer is formed in-situ on the nitride buffer layer. A first thermal annealing process is performed to form a plurality of nanopores in the first defect barrier layer, and the distribution density of the nanopores is from 3.5×10 ¹³ /cm ² to 8.4×10 ¹³ /cm ² . A first nitride semiconductor layer is formed in situ on the first defect blocking layer.

Based on the above, the nitride semiconductor structure of the present application and the method of fabricating the same obtain a nano-porous defect barrier layer formed in situ by a thermal annealing process to block the extension of the defect or the differential row, thereby further The quality of the nitride semiconductor layer formed thereon is improved and the defect density is reduced. In addition, the defect barrier layer having a plurality of nanopores can reduce lattice misalignment of the nitride semiconductor layer during epitaxial growth and release stress. As a result, when the nitride semiconductor layer is applied to the production of a light-emitting element, the light-emitting efficiency of the light-emitting element can be improved.

The above described features and advantages of the present invention will be more apparent from the following description.

1A through 1D are schematic cross-sectional views showing a manufacturing process of a nitride semiconductor structure in accordance with an embodiment of the present invention.

Referring to FIG. 1A, a substrate 100 is provided. In one embodiment, the substrate 100 is an epitaxial substrate, and the material thereof is, for example, a single crystal germanium. Next, a nitride buffer layer 102 is formed on the substrate 100. The method of forming the nitride buffer layer 102 is, for example, metal organic chemical-vapor deposition (MOCVD). The material of the nitride buffer layer 102 is, for example, single crystal aluminum nitride (AlN), aluminum gallium nitride (Ga _x Al _1-x N, 0 < x < 100), gallium nitride (GaN), InGaN (Ga _y In _1-y N, 0 < y < 100) _ or a combination of the above single crystal materials. In one embodiment, the nitride buffer layer 102 includes an aluminum nitride (AlN) layer 102a and an aluminum gallium nitride (AlGaN) layer 102b, wherein the aluminum nitride layer 102a is disposed between the aluminum gallium nitride layer 102b and the substrate 100. The aluminum nitride layer 102a has a thickness of about 50 nm to 500 nm, and the aluminum gallium nitride layer 102b has a thickness of about 0.5 μm to 3 μm. Thereafter, a first defect barrier layer 104 is formed in-situ on the aluminum gallium nitride layer 102b. Here, the term "in situ" means that a film layer is formed on the substrate 100 and the thermal annealing process is performed in the same reaction chamber, wherein the reaction chamber is, for example, an MOCVD reaction chamber. The method of forming the first defect barrier layer 104 is, for example, metal organic chemical vapor deposition (MOCVD), the material of the first defect barrier layer 104 is, for example, amorphous tantalum nitride, and the thickness of the first defect barrier layer 104 is formed. It is about 5 nm to 100 nm.

Referring to FIG. 1B, a thermal annealing process T1 is performed to form a plurality of nanopores 106 in the first defect barrier layer 104', wherein the nanopore 106 has a distribution density of about 3.5×10 ¹³ /cm ² to 8.4×10. ¹³ /cm ² . In one embodiment, the thermal annealing process T1 described above can be carried out in an MOCVD reaction chamber at a temperature of from about 500 ° C to about 1000 ° C, preferably about 800 ° C, for a period of from about 10 minutes to about 60 minutes. After the thermal annealing process T1 is performed, the original flat surface of the first defect barrier layer 104' may be transformed into a nano-porous structure, and the first defect barrier layer 104 may be exposed through the nanopore 106. 'The nitride buffer layer 102 below. In one embodiment, the surface pattern of the first defect barrier layer 104' processed by the thermal annealing process T1 may be spherical or pyramidal according to different annealing temperatures and times, such as the scanning electrons of FIGS. 2A and 2B. Microscope (SEM) images are shown.

Referring to FIG. 1C, a first nitride semiconductor layer 108 is formed in situ on a first defect barrier layer 104' having a nanoporous structure. The method of forming the first nitride semiconductor layer 108 is, for example, metal organic chemical vapor deposition (MOCVD), and the first nitride semiconductor layer 108 is a single crystal material, which may be gallium nitride (GaN) or aluminum nitride. (AlN), aluminum gallium nitride (Ga _x Al _1-x N, 0 < x < 100), indium gallium nitride (Ga _y In _1-y N, 0 < y < 100), aluminum indium gallium nitride ( In _p Ga _q Al _1-pq N, 0<p, q<100, 0<1-pq<100)_ or a combination of the above single crystal materials, in this embodiment, gallium nitride (GaN) For example, the invention is not limited thereto. Specifically, before the first nitride semiconductor layer 108 is formed, the first defect barrier layer 104 ′ having the plurality of nano-pores 106 distributed therein is obtained by adjusting the process temperature and the annealing time of the thermal annealing process T1. The first defect barrier layer 104' having a nanoporous structure not only blocks the extension of the defect and the barrier row to improve the epitaxial quality of the first nitride semiconductor layer 108 thereon, and the first defect barrier layer 104' The compressive stress or the tensile stress may be increased depending on the lattice constant of the underlying material to reduce the fragmentation caused by the excessive difference in thermal expansion coefficient between the first nitride semiconductor layer 108 and the substrate 100.

In an embodiment, in order to obtain a nitride semiconductor layer having a thicker thickness, after forming the first nitride semiconductor layer 108, at least one process similar to that shown in FIGS. 1B to 1C may be selectively repeated. In order to increase the thickness of the nitride semiconductor layer and reduce the defect density and bending, thereby improving the electrical properties of the LED, as shown in FIG. 1D.

Referring to FIG. 1D, a second defect barrier layer 110 is formed on the first nitride semiconductor layer 108 and a thermal annealing process is performed to form a plurality of nano-porosity 112 in the second defect barrier layer 110, wherein the nano-porosity The distribution density of 112 is about 3.5 × 10 ¹³ /cm ² to 8.4 × 10 ¹³ /cm ² . Next, the second nitride semiconductor layer 114 is formed in situ on the second defect barrier layer 110 having a nanoporous structure. In an embodiment, the material, thickness, surface pattern, formation method, and the like of the second defect barrier layer 110 and the second nitride semiconductor layer 114 may be substantially the same or similar to the first defect shown in FIG. 1B and FIG. 1C. The barrier layer 104' and the first nitride semiconductor layer 108, and the conditions or parameters of the thermal annealing process for forming the nanopore 112 may be substantially the same or similar to the thermal annealing process T1 shown in FIG. 1B. No longer.

Thereafter, at least one defect barrier layer having a plurality of nanopores and at least one nitride semiconductor may be selectively formed on the second nitride semiconductor layer 114 in a step similar to that shown in FIG. 1D. When the multilayer defect barrier layer and the multilayer nitride semiconductor layer are formed, the defect barrier layer and the nitride semiconductor layer are stacked on the second nitride semiconductor layer 114 in an alternate arrangement.

The method shown in the above embodiment forms the nitride buffer layer 102 and the first defect barrier layer 104 in situ in the MOCVD reaction chamber, and adjusts the temperature and time of the thermal annealing process performed in the MOCVD reaction chamber. The first defect blocking layer 104' having a specific pore density and surface type is obtained, and the quality of the first nitride semiconductor layer 108 thereon is improved by blocking the difference between the first defect blocking layer 104'.

On the other hand, the first defect barrier layer 104' may be formed in situ to prevent the extension of the defect without forming a pattern by photoresist, and the first defect barrier layer 104' may also increase the compressive stress tensile stress. The lattice constant of the material is determined to reduce the occurrence of tensile stress caused by the difference in thermal expansion coefficient between the first nitride semiconductor layer 108 and the substrate 100, so that occurrence of cracking of the wafer can be avoided. In this way, the thickness limit of GaN grown on the germanium substrate is about 1 μm~2 μm compared to the conventional method, and the single-layer first nitride semiconductor layer formed in the MOCVD reaction chamber can be obtained by the method of the embodiment. The thickness of 108 is increased to 3 μm or even 5 μm.

The nitride semiconductor structure of the embodiment of the present invention, as shown in FIG. 1D, includes a substrate 100, a nitride buffer layer 102, a first defect barrier layer 104', a second defect barrier layer 110, a first nitride semiconductor layer 108, and a first The nitride semiconductor layer 114. The nitride buffer layer 102 is located on the substrate 100. The first defect blocking layer 104' is located on the nitride buffer layer 102. The first nitride semiconductor layer 108 is on the first defect blocking layer 104'. The second defect blocking layer 110 is on the first nitride semiconductor layer 108. The second nitride semiconductor layer 114 is located on the second defect blocking layer 110. In particular, the first defect barrier layer 104' and the second defect barrier layer 110 respectively have a plurality of nanopore 106, 112, and the nanopore 106, 112 has a distribution density of 3.5×10 ¹³ /cm ² to 8.4×10. ¹³ /cm ² .

It is worth mentioning that when the nitride semiconductor structure is formed in situ in the MOCVD reaction chamber by the method described in the above embodiment, the material of the first defect barrier layer 104' is tantalum nitride. However, if the formation of the nitride semiconductor structure in the MOCVD reaction chamber is not limited and is performed by other formation methods, the material of the first defect barrier layer 104' may be tantalum nitride or hafnium oxide.

It is explained herein that although the above embodiment (FIGS. 1A to 1D) is formed with the first defect blocking layer 104' having the nanopore 106 in the first nitride semiconductor layer 108 and the nitride buffer layer 102, The description will be made by way of example, but the present invention is not limited thereto. In other words, a defect barrier layer having a nanoporous structure can be interposed between any two layers of epitaxial layers to block the difference, without particularly limiting its position.

3 and FIG. 4 are schematic cross-sectional views showing a nitride semiconductor structure according to another embodiment of the present invention, and the same members as those described above are denoted by the same reference numerals and the description thereof will be omitted. As shown in FIG. 3, in an embodiment, a first defect barrier layer 104' having nanopores 106 may be formed between the nitride buffer layer 102 and the substrate 100. As shown in FIG. 4, in an embodiment, the first defect barrier layer 104' having nanopores 106 may also be interposed between the aluminum gallium nitride layer 102b and the aluminum nitride layer 102a in the nitride buffer layer 102. .

Further, the nitride buffer layer in the nitride semiconductor structure is not limited to the two-layer structure (such as the aluminum nitride layer 102a and the aluminum gallium nitride layer 102b) described in the above embodiments. FIG. 5 is a cross-sectional view showing a nitride semiconductor structure according to still another embodiment of the present invention, and the same members as those described above are denoted by the same reference numerals and the description thereof will be omitted. As shown in FIG. 5, in an embodiment, the nitride buffer layer 102' in the nitride semiconductor structure may be formed of only one material, such as a single crystal aluminum nitride (AlN) layer.

Of course, in other embodiments of the present invention, the nitride semiconductor structure may be any combination of the above embodiments, as long as the first nitride semiconductor layer 108 and the substrate 100 are formed with the first nanopore 106. The defect barrier layer 104 can be extended by the barrier row. It is well known to those skilled in the art that the application and variations thereof are known, and thus will not be described again.

Experimental example

Next, a method of manufacturing a nitride semiconductor structure having a porous defect barrier layer will be described by way of an experimental example. It is to be noted that the results or data of the following experimental examples are merely illustrative of the above characteristics, but are not intended to limit the scope of the invention.

6A to 6C are top views of a scanning electron microscope (SEM) of Si/AlN/AlGaN/SiN after different annealing times. In this experimental example, an aluminum nitride (AlN) layer having a thickness of 150 nm, an aluminum nitride (AlGaN) layer having a thickness of 600 nm, and a thickness of 50 nm were sequentially formed on a germanium (Si) substrate by MOCVD. After the layer of tantalum nitride (SiN), the thermal annealing process was performed in the MOCVD reaction chamber at 1000 ° C for 10 minutes ( FIG. 6A ), 30 minutes ( FIG. 6B ) and 60 minutes ( FIG. 6C ) respectively. The results are shown in Figures 6A to 6C, respectively.

In the SEM images shown in FIGS. 6A to 6C, the dark portion represents the SiN layer and the light portion represents the AlGaN layer under the SiN layer. It can be clearly observed from FIG. 6A to FIG. 6C that a nano-scale porous SiN layer can be obtained by performing a thermal annealing process, and the spacing between the pores can be changed by different annealing times to form different pore distribution densities. .

Then, using Si/AlN/AlGaN/SiN which was subjected to the above-described thermal annealing process for 10 minutes as an example, a gallium nitride (GaN) layer having a thickness of 2 μm was grown in situ in the MOCVD reaction chamber. Since the SiN layer after the thermal annealing process has a plurality of nano-pores, the GaN is grown by the underlayer (ie, the AlGaN layer) between the SiN layers having a small pitch, and is subsequently subjected to the leveling operation. Next, the nitride semiconductor structure (Si/AlN/AlGaN/SiN (annealed 10 minutes)/2 μm GaN) and the nitride semiconductor structure (Si/AlN/AlGaN/2 μm GaN) not formed with SiN were respectively performed by XRD. The quality analysis and comparison of the results are shown in Figures 7A and 7B.

7A and 7B are diagrams showing the results of analysis of the spiral difference and the edge difference row of GaN by X-ray diffraction (XRD) detection, respectively. 7A and 7B are the FWHMs of (002) and (102) of X-ray, respectively, where (002) represents the density of the helical difference in the nature of the material, and (102) represents the edge of the material. The density of the defective defect. In the (002) and (102) quality analysis, the smaller the half-height of the equivalent curve, the less the defect density and the better the film quality. From the XRD results of FIG. 7A and FIG. 7B, it can be found that when the nitride semiconductor structure is added with SiN (annealing for 10 minutes), SiN can block defects and poor rows caused by the difference in lattice constant, so whether it is a spiral difference row (002) Or the edge difference row (102), the half-height width of the nitride semiconductor structure including SiN (annealing for 10 minutes) is more than doubled than the half-height width of the nitride semiconductor structure not forming SiN, which represents the internal difference row ( Defects) are greatly reduced. The results show that the inclusion of SiN (annealing for 10 minutes) can greatly improve the film quality of GaN.

Further, surface defect density analysis of the above-described nitride semiconductor structure (Si/AlN/AlGaN/SiN (annealed 10 minutes)/2 μm GaN) was further carried out by AFM, and its surface type is shown in FIG. Fig. 8 is a graph showing the results of defect density analysis of the surface morphology of GaN by atomic force microscopy (AFM). Figure 8 shows the defect distribution of the surface in the range of 5 μm × 5 μm when GaN is grown on SiN. The defect density of the GaN layer grown according to the embodiment of the present invention can be greatly reduced to about 8 × 10 ⁸ /cm. ² .

In summary, the nitride semiconductor structure and the method of fabricating the same according to the embodiments of the present invention form a defect barrier layer having a plurality of nanopores therein before forming the nitride semiconductor layer, and can adjust the process temperature and the annealing time to obtain a specific The defect barrier layer of the distribution density and the surface shape can thereby improve the epitaxial quality of the nitride semiconductor layer thereon by the porous defect barrier layer and greatly increase the single-layer leveling thickness of the nitride semiconductor layer. In addition, the porous defect barrier layer can be inserted not only between different epitaxial layers to block the extension of the defect (difference), but also has a better stress release effect to reduce the occurrence of wafer cracking. Moreover, the present technology can form a nanoporous defect barrier layer in situ in the same reaction chamber (such as MOCVD) to block the difference row without forming a photoresist for patterning. Therefore, the nitride semiconductor structure and the method of fabricating the same according to the embodiments of the present invention can contribute to significantly improve the quality of the nitride semiconductor layer and reduce the defect density thereof, and can effectively improve the lattice constant mismatch and the thermal expansion coefficient mismatch. To improve the luminous efficiency of LEDs.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100. . . Substrate

102, 102'. . . Nitride buffer layer

102a. . . Aluminum nitride layer

102b. . . Aluminum gallium nitride layer

104, 104'. . . First defect barrier

106, 112. . . Nanoporosity

108. . . First nitride semiconductor layer

110. . . Second defect barrier

114. . . Second nitride semiconductor layer

T1. . . Thermal annealing process

1A through 1D are schematic cross-sectional views showing a manufacturing process of a nitride semiconductor structure in accordance with an embodiment of the present invention.

2A and 2B are surface patterns of a defect barrier layer in a nitride semiconductor structure in accordance with an embodiment of the present invention.

3 and 4 are schematic cross-sectional views showing a nitride semiconductor structure in accordance with another embodiment of the present invention.

Figure 5 is a cross-sectional view showing a nitride semiconductor structure in accordance with still another embodiment of the present invention.

6A to 6C are top views of a scanning electron microscope (SEM) of Si/AlN/AlGaN/SiN after different annealing times.

7A and 7B are diagrams showing the results of analysis of the spiral difference and the edge difference row of GaN by X-ray diffraction (XRD) detection, respectively.

Fig. 8 is a graph showing the results of defect density analysis of the surface morphology of GaN by atomic force microscopy (AFM).

100. . . Substrate

102. . . Nitride buffer layer

102a. . . Aluminum nitride layer

102b. . . Aluminum gallium nitride layer

104'. . . First defect barrier

106. . . Nanoporosity

108. . . First nitride semiconductor layer

Claims (19)

A nitride semiconductor structure comprising: a substrate; a nitride buffer layer on the substrate; a first nitride semiconductor layer on the nitride buffer layer; and a first defect barrier layer located at the first Between the nitride semiconductor layer and the substrate, wherein the first defect barrier layer has a plurality of nanopores, and the nanopores have a distribution density of 3.5×10 ¹³ /cm ² to 8.4×10 ¹³ /cm ² . The nitride semiconductor structure of claim 1, wherein the first defect blocking layer is between the first nitride semiconductor layer and the nitride buffer layer. The nitride semiconductor structure of claim 1, wherein the first defect barrier layer is between the nitride buffer layer and the substrate. The nitride semiconductor structure of claim 1, wherein the nitride buffer layer comprises an aluminum nitride (AlN) layer on the substrate. The nitride semiconductor structure of claim 4, wherein the nitride buffer layer further comprises an aluminum gallium nitride (AlGaN) layer on the aluminum nitride layer. The nitride semiconductor structure of claim 1, further comprising: at least one second defect blocking layer on the first nitride semiconductor layer, wherein the second defect barrier layer has a plurality of nanopores And at least one second nitride semiconductor layer on the second defect blocking layer. The nitride semiconductor structure of claim 1, wherein the first defect barrier layer has a spherical shape or a pyramid shape. The nitride semiconductor structure of claim 1, wherein the first defect barrier layer has a thickness of 5 nm to 100 nm or less. The nitride semiconductor structure of claim 1, wherein the material of the first defect barrier layer comprises tantalum nitride or hafnium oxide. The nitride semiconductor structure of claim 1, wherein the first nitride semiconductor layer has a thickness of at least 3 μm. The nitride semiconductor structure of claim 1, wherein the material of the first nitride semiconductor layer comprises gallium nitride (GaN), aluminum nitride (AlN), aluminum gallium nitride (Ga _x Al _1-x N) , 0<x<100), indium gallium nitride (Ga _y In _1-y N, 0<y<100), aluminum indium gallium nitride (In _p Ga _q Al _1-pq N, 0<p, q<100,0<1-pq<100)_. A method for fabricating a nitride semiconductor structure, comprising: forming a nitride buffer layer on a substrate; forming a first defect barrier layer in-situ on the nitride buffer layer; performing a first thermal annealing a process for forming a plurality of nanopores in the first defect barrier layer, the nanoporosity having a distribution density of 3.5×10 ¹³ /cm ² to 8.4×10 ¹³ /cm ² ; and blocking the first defect A first nitride semiconductor layer is formed in situ on the layer. The method of fabricating a nitride semiconductor structure according to claim 12, wherein the forming the nitride buffer layer comprises forming an aluminum nitride (AlN) layer on the substrate. The method for fabricating a nitride semiconductor structure according to claim 13, wherein the forming the nitride buffer layer further comprises forming an aluminum gallium nitride (AlGaN) layer on the aluminum nitride layer. The method for fabricating a nitride semiconductor structure according to claim 12, further comprising: forming at least one second defect barrier layer on the first nitride semiconductor layer; performing a second thermal annealing process to Forming the nanopores in the second defect barrier layer, the nanoporosity having a distribution density of 3.5×10 ¹³ /cm ² to 8.4×10 ¹³ /cm ² ; and forming at least one on the second defect barrier layer a second nitride semiconductor layer. The method for fabricating a nitride semiconductor structure according to claim 12, wherein the temperature of the first thermal annealing process is from 500 ° C to 1000 ° C, and the time for performing the first thermal annealing process is from 10 minutes to 60 minutes. The method for fabricating a nitride semiconductor structure according to claim 12, wherein the surface pattern of the first defect barrier layer is spherical or pyramidal. The method of fabricating a nitride semiconductor structure according to claim 12, wherein the material of the first defect barrier layer comprises tantalum nitride. The method of fabricating a nitride semiconductor structure according to claim 12, wherein the first nitride semiconductor layer has a thickness of at least 3 μm.