TW201234651A - Light emitting diode - Google Patents

Abstract

A light emitting diode of the present invention is characterized in that the diode comprises a DBR reflecting layer and an emitting portion on a substrate in this order, and the emitting portion comprises: an active layer having a laminated structure of a well layer represented by the composition formula (Inx1Ga1-x1)As (0 ≤ X1 ≤ 1) and a barrier layer represented by the composition formula (Inx2Ga1-x2)y1In1-y1P (0 ≤ X2 ≤ 1, 0 < Y1 ≤ 1); a first and a second guide layers represented by the composition formula (Alx3Ga1-x3)y2In1-y2P (0 ≤ X3 ≤ 1, 0 < Y2 ≤ 1), wherein the active layer is interposed between the guide layers; and a first and a second cladding layers represented by the composition formula (Alx4Ga1-x4)yIn1-yP (0 ≤ X4 ≤ 1, 0 < Y ≤ 1), wherein the active layer is interposed between the cladding layers via each guide layer.

Description

201234651 VI. Description of the Invention: [Technical Field] The present invention relates to an infrared light-emitting diode having an emission peak wavelength of 850 nm or more, particularly 9 〇〇 nm or more. [Prior Art] Infrared light-emitting diodes have been widely used in infrared communication, infrared remote control devices, various sensor light sources, and night illumination. A light-emitting diode in which a compound semiconductor layer containing an AlGaAs active layer is grown on a GaAs substrate by a liquid crystal filament method is known (for example, Patent Documents 1 to 3).

On the other hand, regarding the infrared communication used for the transmission and reception of information between devices, for example, the infrared remote control operation using infrared rays of 85 〇 to 9 〇〇 nm is performed using, for example, a wavelength band 880 having a high sensitivity of the light receiving portion. Infrared at 940 nm. As an infrared light-emitting diode that can be used for both infrared communication and infrared remote control operation communication for a terminal such as a mobile phone having both infrared communication and infrared remote control operation communication, it is known to use an emission peak wavelength. A diode of an A1GaAs active layer of 880 to 890 nm and containing Ge as an effective impurity (Patent Document 4). In addition, as the infrared light-emitting diode which can have an emission peak wavelength of 900 nm or more, a diode using an InGaAs active layer is known (Patent Document 5). CITATION LIST Patent Literature PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT LITERATURE [Patent Document 5] Japanese Patent Laid-Open Publication No. JP-A-2002-34401 No. JP-A-2002-34401 No. In the method of layer growth, it is difficult to form a substructure having excellent monochromaticity. In addition, as shown in the patent document 4, it is difficult to make the emission peak wavelength of 9 Å or more in the AlGaAs active layer containing Ge as an effective impurity (Fig. 3 of Patent Document 4). With regard to the infrared light-emitting diode of Patent Document 5 which has an emission + value wavelength of 900 nm or more and an InGaAs active layer, the performance, that is, the improvement of the cost and the cost side are insufficient, and based on these viewpoints, it is desired to develop a kind of energy. - Step to achieve performance improvement, energy saving and cost-effective LEDs with high luminous efficiency. The present invention has been made in view of the above circumstances, and an object thereof is to provide an infrared light-emitting diode of infrared light having a high output and high efficiency and emitting an emission peak wavelength of nm or more, particularly 9 〇〇 (10) or more. [Means for Solving the Problem] - In order to solve the above problems, the inventors of the present invention have repeatedly made efforts to study the knot: the genus-type luminescent diodes are formed by having a luminescent portion and a luminescent portion. The structure of the DBR reflective layer between the substrates, and the shape of the -5-201234651 south output; high efficiency and can emit infrared light-emitting diodes having an emission peak wavelength of 850 nm or more, especially 900 nm or more; wherein the light-emitting portion has an active layer and The AiGalnP slope coating layer of the quaternary mixed crystal of the active layer is present, and the active layer has a multiple quantum well structure and comprises a ternary mixed crystal InGaAs well layer and a quaternary mixed crystal A1 GaAs barrier layer. At the time of the research, the inventors of the present invention used a well layer containing InGa As to have an emission peak wavelength of 850 nm or more, particularly 900 nm or more which can be used for infrared communication or the like. Further, in order to improve monochromaticity and output, an active layer having a multiple quantum well structure is employed. 'AiGalnP is a kind of quaternary mixed crystal with good crystallinity, which is in the barrier layer sandwiching the well layer of the ternary mixed crystal, and the guiding layer and the cladding layer sandwiching the multiple quantum well structure. The band gap is large and transparent to the wavelength of light emission, and does not contain As which is prone to defects. Further, the multiple quantum well structure having the InGaAs layer as the well layer has a larger lattice constant than the GaAs used as the substrate, and becomes a deformed quantum well structure. The composition and thickness of the InGaAs of this deformed quantum well structure can have a large effect on the output or monochromaticity. Therefore, the choice of the appropriate composition, thickness and number of pairs of InGaAs is important. Here, the inventors of the present invention have found that by adding a deformation opposite to the InGaAs well layer in the barrier layer A1GaInP to improve the lattice mismatch caused by the pairwise addition of InGaAs in the lining structure, the high current region can be improved. Luminous properties. The present inventors further studied based on this finding, and as a result, completed the present invention shown in the following constitution. U) A light-emitting diode comprising a DBR reflective layer and a light-emitting diode in a light-emitting portion on a substrate, wherein: the light-emitting portion has a laminated structure: the well > 1) The barrier layer is coated with &lt;Yl^1). The active layer' has a well layer and a barrier layer containing a composition formula (InxiGai-xi) As (OS XI contains (Alx2Ga ι-Χ2) γιΙηι, γιΡ ( 0^ X2^ 1 &gt; describes the active layer and '°&lt;Y2^ 1 first guiding layer and second guiding layer, which are composed of a composition formula (Alx3Gai.x3) Y2lni.Y2P (0$); And the first and second coating layers are formed by sandwiching the active layer and the second guiding layer, respectively, and comprising a composition formula (Alx4Ga1-X4)YIn1. (2) The light-emitting diode according to the above item (1), wherein the XI of the composition formula of the above &lt; Ι7Γ嘈 is 0SX1S0.3. Composition (3) The light-emitting diode of the above item (2), wherein the XI shown is 0.1 S XI $ 0.3. (4) The difference of any one of the items (1) to (3) above - 乂Especially a polar body in which the aforementioned DBR reflective layer interacts The layer has a layer of 1 to 5 〇 for the two layers of the thin, sinuous, and sinuous years. (5) The illuminating diode of the above item (4), in which the yoke is different in refractive index. The two layers are grouped below and composed of two layers different from each other (8 1乂11〇&amp;1.乂1^3111113?(〇&lt;乂]1$1,丫1__(^ γ3~〇·5 The layer of ; and the layer containing (AlxiGaudYsIn^wPi^OSXlS 1, Y3# υ · 3); the difference of the composition of the two layers of AX = xh-xl is greater than that of the temple from 4 Temple Yu, 5. (6) The light-emitting diode according to the above item (4), wherein the two layers having different spelling ratios include a layer of GalnP and a layer containing AllnP and a person. 201234651 (7) The light-emitting diode of the foregoing item (4) a body in which two layers having different refractive indices of the front enthalpy are composed of a combination of two layers different from each other: a layer containing AlxiGai.xlAs (0.1 &lt;xlSl); and a octet comprising 8 1?{11〇&amp;1-兀11 8 3 (0.1; ^11幺1) layer; composition difference ΔΧ=χ1ι-χ 1 of the two layers is greater than or equal to 〇5. (8) As in the above items (1) to (7) a light-emitting diode on the surface of the aforementioned light-emitting portion, reflected with DBR A current diffusion layer is provided on the surface on the opposite side of the layer. [Effects of the Invention] According to the above configuration, the following effects can be obtained. The light-emitting diode of the present invention has high output and high efficiency, and can emit infrared light having an emission peak wavelength of 85 〇 11111 or more, especially 90 〇 11111 or more. The light-emitting diode of the present invention has an active layer A well layer including a composition formula (InxiGa^xJAsCO SX1S1) and a multi-card structure including a barrier layer of a composition formula (Alx2Gai.X2) Y1Ini-Y1P (0 $ X2 ^ 〇 〇 &lt; γι $ 1), so Excellent color. In the light-emitting diode of the present invention, since the coating layer includes a composition formula of a quaternary mixed crystal (AlxGai-jOYinhYPo each 1 ' 〇 &lt; γ$ 1), the infrared ray containing the ternary mixed crystal is included in the coating layer. Compared with the light-emitting diode, the A1 concentration is low and the moisture resistance is improved. The light-emitting diode of the present invention has a layer containing a composition formula (InxiGa丨.Xi)As (〇SXlg丨) and a composition formula containing the composition formula (AlX2GabΧ2)Υ1Ιηΐ-Υ1ρ(〇$1, 〇&lt; Γι $ 构成 构成 构成 ' ' ' ' ' ' ' ' ' ' ' 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于 由于Therefore, it is possible to avoid a decrease in the light-emitting output due to the absorbing of the light of the GaAs substrate. [Embodiment] [Embodiment for Carrying Out the Invention] Hereinafter, a light-emitting diode to which an embodiment of the present invention is applied will be described with reference to the drawings. In the following description, the drawing used in the following description is a case where the feature is easily understood, and the portion to be characterized is appropriately enlarged, and the dimensional ratio of each component is not necessarily the same as the actual one. &lt;Light Emitting Diode&gt; Fig. 1 is a schematic cross-sectional view showing a light-emitting diode according to an embodiment of the present invention. Fig. 2 is a laminated structure of a solution layer and a barrier layer to which an embodiment of the present invention is applied. It As shown in Fig. 1, the light-emitting diode 1 of the present embodiment is provided with a DBR reflective layer 3 and a light-emitting diode 30 of the light-emitting portion 20 in the substrate 1. The light-emitting portion 20 is provided. An active layer 7, which has a well layer 15 containing a composition formula (Inx丨Gai-X丨) As (0S XI S 1) and a composition formula (Α1χ2〇3ι·χ2) γιΙηι-γιΡ (0$Χ2$1, a multilayer structure of the barrier layer 16 of 0 &lt; Υ 1$1); a first guiding layer and a second guiding layer, which are sandwiched from the active layer 7 on both sides and comprising a composition formula (Alx3Gai-x3) Y2lni-Y2P ( 0S X3S 1 , 〇 &lt; Υ 2$ 1); the first sub-layer 5 and the second sub-layer 9 are sandwiched between the first guiding layer 6 and the second guiding layer 8 respectively The active layer 7 also contains a composition formula (Α1χ4〇&amp;ι·χ4)γϊηι-γΡ(〇$Χ4$1,〇&lt;Υ$1). -9 - 201234651 Aperture half-v layer (also known as Lei The crystal growth layer has a structure in which a pn junction type light-emitting portion 2Q and a current diffusion layer 10 are sequentially laminated as shown in Fig. 3. In the structure of the compound semiconductor layer 30, a well-known functional layer can be added as appropriate. Well-known layer structure Manufactured: a contact for reducing the Ohm resistance; a contact for diffusing the element drive current to the entire light-emitting portion, and conversely for limiting the component drive current The current blocking layer or the electric current narrowing layer is in the flow-through region. In addition, although the light-emitting portion 2A and the current diffusion layer 10 are shown as the compound semiconductor layer 3, the compound semiconductor layer 30 can also be used. A reflective layer or a buffer layer is required as needed. Further, the compound semiconductor layer 30 is preferably a layer formed by epitaxial growth on a GaAs substrate. As shown in FIG. 1 , the light-emitting portion 2 disposed on the n-type substrate is sequentially laminated on the DBR reflective layer 3, and the n-type lower cladding layer (the second cladding layer) 5 and the lower P guiding layer 6 ' are sequentially laminated. The lingual layer 7, the upper guiding layer 8, and the p-type upper cladding layer (second covering layer) 9 are formed. In other words, the light-emitting unit 2 is configured to form a so-called double heterogeneous (English abbreviated as: DH) structure in order to obtain a high intensity in order to "enclose" the carrier (carrier) and the light-emitting "recombinant" of the radiation. The light-emitting aspect is preferable, wherein the double heterostructure includes a lower cladding layer 5' and a lower guiding layer 8 and an upper guiding layer 8 disposed on the lower side and the upper side of the living layer 7 The structure of the cladding layer 9 is as shown in FIG. 2. The active layer 7 constitutes a quantum well structure in order to control the emission wavelength of the light-emitting diode (LED). That is, the active layer 7 is a multilayer structure (laminate structure) having the well layer 15 and the barrier layer 16 of the barrier layer (also referred to as a barrier layer) 16 at both ends. 201234651 The layer thickness of the active layer 7 is preferably in the range of 0.02 to 2 μm. Further, the conductivity type of the active layer 7 is not particularly limited, and any of undoped, p-type and 〇-type may be selected. In order to improve the luminous efficiency, it is desirable to use a carrier concentration of undoped or less than 3xl 〇7 cm·3 which is excellent in crystallinity. The DBR (Distributed Bragg Reflector) reflective layer 3 comprises a multilayer film having a film thickness of λ/(4η): a wavelength of light to be reflected in a vacuum, η: a refractive index of a layer material, and an alternating layer of refraction. The two layers are different in rate. When the reflectance is large as the difference between the two refractive indexes, a multilayer film of a small number of layers can be obtained to obtain high reflectance. Such a layer is characterized in that it is not reflected on a specific surface like a general reflection film, but is reflected by the interference phenomenon of light in the entire multilayer 犋. The DBR (Distributed Bragg Reflector) reflective layer 3 is preferably formed by alternately laminating two layers having different refractive indices of ~5 Å. This is because the reflectance is too low for the stacking of 1 〇 or less, which does not contribute to the increase of the output, and even if it is 50 pairs or more, the increase of the reflectance is further reduced. The two layers constituting the DBR (Distributed Bragg Reflector) reflective layer 3 having different refractive indices are preferably selected from the following three combinations in order to obtain high reflectance with high efficiency. That is to say, in terms of efficiently obtaining high reflectance, the above two layers are preferably two layers having different compositions, that is, selected from any of the following three combinations: Containing the composition formula (AlxhGai_xh) Y3lni_Y3P (〇 a layer of &lt;XhS 1, Y3 = 0.5) and a layer comprising a composition formula (Alx丨Ga.x丨)υ3Ιγμ-υ3Ρ(〇S X1&lt;1, Y3 = 〇.5) and both of Composition difference ΔΧ = χΙι-χ1 is a combination of greater than or equal to 0.5; or a combination of GalnP and AllnP; or contains compositional -11- 201234651

The layer of AlxiGai .X] As (0.1 ^ xl ^ i) and the layer containing the constituent gas AlxhGai-xhAS (0.1S xhg 1) and the composition of both ^ △ X = xh-xl is greater than or equal to 〇·5 The combination. It is preferable to form a combination of two layers containing AlGalnP different from each other because it does not contain As which is liable to cause crystal defects. The combination of GaW and AUnP is one in which the largest refractive index difference can be obtained, so that the number of reflective layers can be reduced, and the composition is replaced simply, so that it is preferable. Further, AlGaAs has an advantage that a large refractive index difference can be easily obtained. Next, the well layer 15 and the barrier layer 16 will be described. In Fig. 3, the In composition (XI) of the well layer 15, i.e., the XI represented by the composition formula of the well layer, is fixed at 0.1 to show the correlation between the layer thickness of the well layer and the emission peak wavelength. The values of the points shown in Fig. 3 are shown in Table 1. When the well layer is thickened to 3 nm, 5 nm, and 711111, the wavelength monotonically becomes 82 〇 nm and 87 〇 nm.

4 is a graph showing the correlation between the peak wavelength of the luminescence of the well layer 15 and the layer thickness of the In composition (χι) and the morph layer 15. 4 is a combination of the Ιη composition (χι) and the layer thickness of the well layer 15 when the illuminating peak wavelength of the sag layer 1 is a predetermined wavelength, and s, which is a line connecting the point and the point, indicating that the illuminating peak wavelengths are respectively 920 nm. The composition of the In composition (χι) of the card layer 15 composed of 960 nm and the layer thickness. Further, in Fig. 4, the display of the combination of In composition (XI) and layer thickness at other emission peak wavelengths of 82 Å, 87 Å, 985 nm and 999 nm is shown. Table 2 shows the enthalpy of the point shown in Fig. 4. 201234651 Table 2 820nm 870nm 920nm 960nm In composition layer thickness (nm) layer thickness (nm) layer thickness (nm) layer thickness (nm) layer thickness (nm) 0.05 8 0.10 3 5 7 8 --- - 0.20 5 6 0.25 4 5 0.30 λ ΐς 3 5 — ------ 5 The above graph and table can also be understood, when the illuminating peak wavelength is 92〇11111, 'When the In composition (X1) falls from 〇3 To 〇5, the corresponding layer thickness monotonically becomes thicker from 3 nm to 8 nm. From this, it is found that a combination of the composition of the emission peak wavelength of 92〇nmiIn and the layer thickness of the well layer can be easily found as long as it is a counterpart. Further, when the In composition (XI) is 〇1, the layer thickness is increased to 3 nm, 5 nm, 7 nm, and 8 nm, and accordingly, the emission peak wavelength becomes 82 〇 nm, 87 〇 nm, 920 nm, and 960 nm. Further, when the In composition (χι) is 〇 2, the layer thickness is increased to 5 nm and 6 nm, and correspondingly, the luminescence peak wavelength is lengthened to 92 〇 nm '96 〇 nm. When the tIn composition (X1) is ruthenium, the layer thickness is increased to 4 nm and 5 nm, and correspondingly, the luminescence peak wavelength becomes 92 〇 nm and 96 〇 nm. Further, 'when the composition of In (XI) is 0.3, the thickness of the layer is increased to 3 nm and 5 nm. Accordingly, the wavelength of the emission peak is longer than 92 〇 nm and 985 η π ^, and when the layer thickness is 511 111, When the composition (χι) is increased to 〇", 0.2, 0.25, and 0.3', the luminescence peak wavelength becomes 87 〇 nm, 92 〇 nm, 96 〇 nm, and 985 nm. When the 1n composition (XI) is 0.35, the emission peak wavelength is 995 nm. In Fig. 4, when the combination of the peak wavelengths of the illumination and the combination of the composition of the 96 〇nmiIn (X1) and the layer thickness are respectively formed, the substantially straight lines which are approximately parallel to each other are formed, and the result of Fig. 4 is presumed to be 85 〇. In the combination of the In composition (XI) and the layer thickness in which the nm band is from -13 to 201234651 up to about 100 nm, and the combination of the In composition (χι) and the layer thickness is also substantially linear. There is also a line which is presumed to be connected to the above combination, and the shorter the luminescence peak wavelength is, the lower the side, and the longer the ylide is located on the upper side. According to the above regularity, it can be easily found to have a desired luminescence of 85 〇 nm or more and 100 Å or less. The in composition (χι) of the peak wavelength and the layer thickness. Fig. 5 shows the correlation between the In composition (X 1) when the layer thickness of the well layer 15 is fixed at 5 nm and the emission peak wavelength and its light-emitting output. Table 3 shows the values of the points shown in Fig. 5. When the In composition (XI) is increased to 〇.12, 〇.2, 〇.25, 0.3, 0.35', the luminescence peak wavelength (emission wavelength) becomes 87 〇 nm, 920 nm, 960 nm, 985 nm, and 995 nm. More specifically, as the In composition (χι) increases from 0.12 to 0.3, the luminescence peak wavelength increases approximately monotonically from 87 〇 nm to 985 nm. However, even if the ηη composition (χι) is increased from 〇 3 to 0.35 ′, although the luminescence peak wavelength is changed from 985 nm to 995 nm, the rate of change of the long wavelength becomes small. Further, when the luminescence peak wavelength is 870 nm (Xl = 0.12), 920 nm (Xl = 0.2), and 960 nm (Xl = 0.25), the luminescence output is a high 6.0 mW value, and even when it is 985 nm (Xl = 0.3), Practically high and high 4.5mW value. However, when the illuminating peak wavelength is 995 nm (Xl = 0.35), the illuminating output is a lower UmW value. 201234651 Table 3 Layer thickness 5nm In composition wavelength (nm) Output imW) 0.12 870 6 〇0.20 920 6.2 0.25 960 6 0 0.30 985 4 5 _- 0.35 995 1.8 __- According to Figure 3 to Figure 5, included In the inGaAs layer, the composition of the layer 15 preferably has (Inx^anOAsCOSXlSOJ). The above XI can be adjusted to the desired wavelength of light in this range. When the emission peak wavelength is 900 nm or more, it is preferably 0-12X1 幺 0.3, and when it is less than 900 nm, it is preferably 〇 χ &&lt; 〇·ι. The layer thickness of the taste layer 15 is suitably in the range of 3 to 2 〇 nm. More preferably, it is in the range of 3 to 10 nm. The barrier layer 18 has a composition of (AlX2Gai_X2) Y1In 丨.γ丨1, 〇&lt;Yl S 1). The above X2 is preferably set to have a band gap larger than that of the well layer 17 and more preferably in the range of 0 to 0.2. Further, in order to alleviate the deformation caused by the lattice mismatch of the well layer 17, γι is preferably set to 〇 5 to 〇 7, more preferably in the range of 〇·52 to 0.60. The layer thickness of the barrier layer 18 is suitably in the range of 3 to 2 Å, and is preferably equal to or thicker than the layer thickness of the well layer 17. Thereby, the luminous efficiency of the well layer π can be improved. Fig. 6 shows that the layer thickness of the well layer 15 is 511 claws, 111 composition (乂1) = 〇.2 (i.e., (LzGao.dAs), and the composition of the barrier layer χ2 = 〇^, γ 〇 〇 η ( Immediately, the paired wells of the well layer and the barrier layer have a light-emitting output: correlation. The layer thickness of the barrier layer is 1 〇 _. Table 4 shows the 资料 of the data of the map. This value is used when the substrate is used. 201234651 In addition, in order to show the effect of the barrier layer, an example in which all the conditions are the same except for the early layer of the resist P, Al0.3Ga0_7As is used as a comparative example. About the resist I1 layer, use A1Q.3 G a 〇 In the comparison example of .7 A s, the number of pairs is up to 1~5 pairs, and the luminous output has a higher than 6.0mW. When the pair is 1 〇, the luminous output is reduced to 5 · 7m W, and the logarithm is In contrast, in the present invention, the number of pairs is up to 丨〇, and the enthalpy of approximately 6.0 mW or more is maintained. Thus, even if the number of pairs is increased, the high luminescence output can be maintained 'because ( AlX2Gai_X2)YlIni_YlP (composition 乂2-0.1, 丫1=〇.55', that is, (into 1.1〇3〇9)〇'55111.45?) barrier layer And the deformation of the layer containing the composition formula (InxlGai_xi) As (〇S Χ1$ 1) with respect to the Ga As substrate (that is, the barrier layer is imparted with lattice distortion in the opposite direction to the well layer) and the crystallinity is suppressed. Further, referring to Fig. 8, the effect of the relaxation relaxation is explained. Table 4 The thickness of the well layer is 5 nm. In composition 0, 2 The logarithmic output (mW) (Al〇.iGa〇.9) 〇.55ln〇.45P barrier layer Output (mW) - Comparative Example (Al〇.3Ga〇.7As barrier layer) 1 6.20 6.10 3 6,20 6.20 5 6.15 6.20 10 6.00 5.70 20 5.50 4.80 — Figure 7A shows that the layer thickness of the layer 17 is 5 nm and In composition (Xl) = 0.2 (emission wavelength 920 nm), and the barrier composition A1 composition (X2) = 0.1, the pair of pairs is 5 pairs, the barrier layer Y1 (ie (AluGaodyli^-yP) and the light output Correlation: The layer thickness of the barrier layer is l 〇 nm. Table 5 shows the 値 of the data shown in Figure 7. This value is the 値 when using a GaAs substrate. -16- .201234651 &amp;&lt; a political effect, in Figure 7 显示 shows that the barrier layer is the same as the above-described invention, but the morphine is v±-&amp; uses the same material as the substrate GaAs layer (ie, the use does not change the substrate An example of the case of the shape of the taste eyebrows is shown in Fig. A. The case of the present invention shows that the light-emitting output is at most 6.2 mW' and the light-emitting output is approximately 6 mW when the range of γι^·5 to (4) of the layer is changed. In the comparative example in which the GaAs layer is used as the well layer, the light-emitting output 昜+*J 35 is 5.9 mW, and the range in which the high output is displayed is also narrower than in the case of the present invention. According to this special result, in the invention of the present invention, since the deformation of the well layer can be moderated by the reverse deformation of the barrier layer, it is known that the crystallinity is lowered from a ^ Λ ρ, so that it is understood that the light output is high and the high rotation can be displayed. . The composition of your beta barrier layer is also wide. With respect to this result, in the comparative example, "mountain" is a combination of a well layer having no deformation and a barrier layer having deformation, &amp;, so that it is understood that the crystallinity is lowered and the light-emitting output characteristics are lowered. _ Table 5 _丨m into two

.201234651 Figure 8 shows the dependence of the number of well layers and the early layers of the resist P on the correlation between the forward current and the illuminating output. The data shown in the figure shows that the well layer 15 has a layer thickness of 5 nm, an In composition (χι) = 〇2 (i.e., (ln. 2 (}heart 8)^), and the composition of the barrier layer χ2 = 〇], γι = 〇 55 (ie (AlojGa &quot;). 5sIn 〇 45ρ) ' and the logarithm is 3 pairs and 5 pairs. The layer thickness of the early layer of the barrier layer is l 〇 nm. Table 6 shows the data of the data shown in Figure 8. When the forward current is up to 30 mA, the pairwise number is 3 pairs and 5 pairs: in the case of the case, the illuminating output is approximately proportional to the increase of the current, plus..., and the forward current is 50 mA. l 〇〇 mA, when the number of pairs is 5 pairs, the illuminating output is generally increased with respect to the enthalpy addition t' of the current, and when the number of pairs is 3 pairs, the rate of increase of the current is decreased by L. When the forward currents are 5〇111 8 and 10〇111 8 respectively, the luminous output output has a logarithm of 5 pairs and is 1.5 mW and 8 mW lower. Therefore, it is known that for high current and high output light emitting diodes. It is more appropriate to compare 5 pairs of 3 pairs. The reason why the number of pairs is more suitable for high current/high rotation is due to the number of pairs, the composition of which is χ2 = 〇1, γι=〇55 (AluGa..9 ) The barrier layer of ^nmp) can further alleviate the deformation of the well layer containing the composition layer with respect to the substrate, and can further suppress the decrease in crystallinity. Table 6 Pairs of pairs of 3 pairs of 5 pairs of current (mA > input tij OnH) - out (mW> 0.1 0 0 5 1.5 1.4 10 3.3 3.3 20 6.2 6.15 30 9.0 9.0. 50 13. α 14.5· too 20.0 28.0

-18-S 201234651 The taste layer 15 and the barrier layer 15 and the barrier layer 16 are alternately layered. In accordance with Fig. 6, the number of pairs is not particularly limited. However, the pair contains 10 i or less of the above 10 pairs. That is, the card layer 15 of the 'active layer 7' layer is preferred. Here, in order to obtain a preferred luminescent illuminator of the active layer 7, the well layer 15 must be on one layer U, but only the layer, on the other hand, the well layer 15 and the barrier layer. There is a 炊T rrr ^ ^ ^ ^ match between the layers, and the concentration of the plant is low. Therefore, once you have made many pairs, you will be prepared.

S generates,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, m, I material, and butyl 9 are therefore preferably 1 〇 to the following, more preferably 5 or less. Specifically, the upper guiding layer 8 is provided on the upper surface of the active layer 7 of the active layer 7 as shown in Fig. 2, and the lower portion 6|^6 is disposed on the lower surface and the upper surface of the active layer 7. Below it is provided a lower guiding layer 6, on the upper guiding layer 8.

The lower guiding layer 10;», A continuation 10 and the upper guiding layer I2 have the composition of (Alx3Gai_X3)Y2lni_Μ χ3 $ t(four)^^. Preferably, the X3 of the guiding layers is such that the band gap is equal to or larger than the band gap of the barrier layer i 8! The composition of the energy band gap of 8 is large. Therefore, χ3 is preferably in the range of 〇·2 to 0'5... Y2 is preferably set to 〇.4 to 0.6. X3' can be selected in a range that can function as a guiding layer and is transparent to an emission wavelength. Y2, since the guiding layer is a thick film, it is possible to select a lattice integration with the substrate, and it is possible to select a range in which good crystal growth can be performed. The lower guiding layer 6 and the upper guiding layer 8 are respectively provided for reducing the spread of defects between the lower cladding layer 5 and the upper cladding layer 9 and the active layer y, respectively. That is, in the present invention, the group V structural element of the active layer 7 is argon (As) ′ relative to the lower cladding layer 5 and the V group structural element of the upper cladding layer 9 is phosphorus (P). Therefore, the interface between the active layer 7 and the lower cladding layer 5 and the interface between the active layer 7 and the upper cladding layer 9 are likely to cause defects. The transfer of defects to the active layer 7 is responsible for the reduced performance of the light-emitting diode. In order to effectively reduce the transmission of this defect, the layer thickness of the lower guiding layer 6 and the upper guiding layer 8 is preferably 10 nm or more, more preferably 2 〇 nm to 100 nm. The conduction type of the lower guiding layer 6 and the upper guiding layer 8 is not particularly limited, and any of undoped, P-type, and n-type may be selected. In order to improve the luminous efficiency, it is desirable to use a carrier concentration of undoped or underfilled 3xl017cm_3 which is excellent in crystallinity. As shown in Fig. 1, the lower cladding layer 5 and the upper cladding layer 9 are respectively disposed below the lower guiding layer 6 and above the upper guiding layer 8. The material of the lower cladding layer 5 and the upper cladding layer 9 should preferably use a semiconductor material of 0 &lt; γα), preferably a material having a gap larger than that of the barrier layer ,5, and more preferably a band gap. A material having a larger gap than the lower guiding layer 6 and the upper guiding layer 8. For the material satisfying the above conditions, the χ4 of the (AlX4Ga Χ4) ΥΙηι·γΡ (0$ Χ4$ 卜〇&lt;γ$ 1} is preferably 〇3~〇. Further, Υ is set to 0.4~〇 6 is preferable. χ4 can be selected in a range that can function as a coating layer and is transparent to an emission wavelength. Υ4, since the coating layer is a thick film, from the viewpoint of lattice integration with the substrate, The range of the high-quality crystal growth can be selected. The lower cladding layer 5 and the upper cladding layer 9 are configured to have different polarities, and the carrier concentration of the lower cladding layer 5 and the upper cladding layer 9 is -20. - 201234651 The thickness can be used in a suitable range of 'preferably, the conditions are optimized in such a way that the efficiency of the active layer 7 is improved. Further, by controlling the composition of the lower adjacent layer 5 and the upper layer | Semiconductor: 30% warpage is reduced. 9

Specifically, the Si-type lower cladding layer 5 is preferably a semiconductor material containing, for example, doped (AlX4bGa1.x4b)YbIn1.Ybp (〇.3&lt;X4b&lt;〇70KYb&lt;0.6). ΙχΙΟ17 to 1x10丨8cm·3 range. Further, the carrier concentration is preferably at a layer thickness of preferably 0.1 to ΐμηι. On the other hand, the upper cladding layer 9 is preferably made of, for example, doped.

a semiconductor material of P type (AlxhGaujYalh Yap (〇3$X4a^7, 0.kYK〇.6) of Mg. Further, the carrier concentration is preferably in the range of 2xl017 to 2xl〇, 8cm-3, layer thickness The thickness of the lower cladding layer 5 and the upper cladding layer 9 can be selected in consideration of the element structure of the compound semiconductor layer 30. In addition, the structural layer of the light-emitting portion 20 is selected. Above, a contact layer for reducing the contact resistance of the Ohmic electrode, a current diffusion layer for diffusing the element drive current to the entire light-emitting portion, and conversely for limiting the component drive current can be arbitrarily disposed. A conventional layer structure such as a current blocking layer or a current confinement layer in a region to be circulated. As shown in Fig. 1, the current diffusion layer 10 is disposed above the light emitting portion 2A. The current diffusion layer 10 can be suitably used for the light emitting portion. The light-emitting wavelength of 20 (active layer 7) is transparent, and for example, Gap bite GalnP can be suitably used. • 21·s 201234651 In addition, the thickness of the current-diffusion layer 1 is preferably 0.5 to 0.5 to 20 μm.

Increased.

Or an alloy of AuZn/Au. On the other hand, for example, an alloy containing AuGe, Ni alloy/Au can be used, for example, using the AuBe/Au'n type ohmic electrode 13. &lt;Manufacturing Method of Light Emitting Diode&gt; Next, a method of manufacturing the light emitting diode 1 本 according to the present embodiment will be described with reference to Fig. 1 . (Step of Forming Compound Semiconductor Layer) First, the compound semiconductor layer 3A shown in Fig. 1 was produced. The light-emitting diode system including the compound semiconductor layer 30 is sequentially laminated on the GaAs substrate 1 : a buffer layer 2 including GaAs, and an alternating layer of 4 Å pairs of layers including GaInp (layers having a large refractive index) 3a and layers containing AllnP ( DBR reflective layer 3 made of 3b with small refractive index), n-type lower cladding layer 5 doped with Si, lower guiding layer 6, active layer 7, upper guiding layer 8, and p-type upper portion doped with Mg The cladding layer 9 is made of a current diffusion layer containing Mg-doped p-type GaP.

As the GaAs substrate 1, a single crystal substrate of a commercially available product obtained by a known production method can be used. It is preferable that the surface of the GaAs substrate 1 for epitaxial growth is smooth. The surface orientation of the surface of the GaAs substrate 1 is such that it is easy to carry out the insect crystal formation of 201234651 (100) surface and from (100) offset. The substrate inside is ideal for product λ stability. Further, the range of the plane orientation of the GaAs substrate 1 is shifted from the (100) direction by (〇_][·〇 direction by 15. Soil 5. More preferably. In the present specification, the MiUer index is used. In the designation, "·" means a bar attached to the subsequent index. In order to improve the crystallinity of the compound semiconductor layer 30, the dislocation density of the GaAs substrate 1 is preferably lower. For example, 丨〇, 〇〇〇 cm or less 'expected is preferably 1 and cm cm 2 or less. The lower limit can also be arbitrarily selected.

The GaAs substrate 1 may be of an n-type or a p-type. The carrier concentration of the GaAs substrate 1 can be suitably selected from the desired electrical conductivity and element configuration. For example, in the case where the GaAs substrate 1 is an n-type doped with germanium, the carrier concentration is preferably in the range of 1 × 1 017 to 5 × 10 18 cm -3 . On the other hand, the GaAs substrate 1 is a zinc-doped p-type, and the carrier concentration is preferably in the range of 2 χ 10 18 〜 5 x 10 019 cn T 3 .

The thickness of the GaAs substrate 1 has an appropriate range depending on the size of the substrate. If the thickness of the GaAs substrate 1 is thinner than the appropriate range, cracking occurs in the manufacturing process of the compound semiconductor layer 30. On the other hand, if the thickness of the GaAs substrate 1 is thicker than the appropriate range, the material cost increases. Therefore, when the substrate size of the GaAs substrate 1 is large, for example, when the GaAs substrate 1 has a circular shape with a diameter of 75 mm, it is preferable to have a thickness of 250 to 500 μm in order to prevent cracking during transportation. Similarly, in the case where the diameter of the GaAs substrate 1 is 50 mm, the thickness is preferably 200 to 400 μm, and in the case where the diameter of the GaAs substrate 1 is 10 mm, the thickness is preferably 35 〇 to 6 〇〇 μπ. .201234651 So - come' by responding to the GaAs substrate! The thickness of the substrate and the thickness of the substrate can reduce the softness of the compound core layer 30 caused by the light-emitting portion 20. Thereby, since the temperature distribution of the sputum growth is uniform due to the epitaxial growth, the wavelength distribution in the plane of the active layer 7 can be made small. In addition:

The shape of the GaAs substrate 未 is not particularly limited to a circular shape or a rectangular shape. The buffer 2 is provided to reduce the spread of defects in the constituent layers of the 〇aAs substrate 1 and the light-emitting portion 2A. Therefore, the buffer layer 2 is not necessarily required as long as the quality of the substrate and the epitaxial growth conditions are selected. Further, the material of the buffer layer 2 is preferably the same as that of the substrate for epitaxial growth. Therefore, in the present embodiment, it is preferable that the buffer layer 2 is made of GaAs similar to the GaAs substrate 1. Further, in order to reduce the spread of defects, the buffer layer 2 may be used to contain a substrate different from the GaAs substrate! Multilayer film of material. The thickness of the buffer layer 2 is preferably set to be more than the above, and it is more preferable that the thickness of the buffer layer 2 is more than the claw. The upper limit of the thickness can be arbitrarily selected. The buffer layer 2 can also be considered as part of the compound semiconductor layer 30. The DBR reflective layer 3 is provided for reflecting light traveling in the direction of the substrate. The material of the DBR reflective layer 3 is preferably transparent to the wavelength of light emission, and the difference in refractive index between the two materials which are preferably selected to constitute the DBR reflective layer 3 becomes large.

The combination. In the present embodiment, the material of the DBR reflective layer 3 is combined with AllnP and GalnP. However, it is also possible to select a layer containing two layers (AlxiGa^x丨)〇5In〇, 5P (〇Sxl &lt; 1), and a layer containing (AlxhGa^xjOo.sInojPCCX xh&lt;l) Combination; in addition, it is also possible to select AlxlGai-xlAs (0.lSxl&lt;l) from two different layers

a layer, and a combination of layers comprising AlxhGai-XhAs (0.1 &lt; xhSl). The DBR reflective layer 3 can also be considered as part of the compound semiconductor layer 30. In the present embodiment, when the compound semiconductor layer 3 is formed, a known growth method such as a molecular beam crystallization method (MBE method) or a reduced pressure organometallic chemical vapor deposition method (MOCVD method) can be applied. Among them, the MOCVD method which is excellent in mass productivity is the best. Specifically, 胄 is used for the epitaxial growth of the compound semiconductor layer 30 of the GaAs substrate! It is preferable to carry out a pretreatment such as a washing step or a heat treatment before the growth to remove the surface contamination or the natural oxide film. Each of the layers constituting the compound semiconductor layer 30 may be formed by disposing a GaAs substrate 1 having a diameter of 50 to 150 mm in an M〇CVD apparatus while simultaneously growing the crystallites. In addition, the M〇Cvd device can be used as a large-scale device such as a self-propelled, high-speed rotary type. When the respective layers of the compound semiconductor layer 30 are epitaxially grown, as a raw material of the group III constituent element, for example, trisyl aluminum ((CHshAl), trimethylgallium ((cH^Ga), and three) can be used. Methyl indium ((CH3)3In). Further, as a doping raw material of Mg, for example, bis(cyclopentadiene) (bis-(C5H5)2Mg) or the like can be used. Further, a doping raw material of Si can be used. For example, dioxane (Si2H6), etc. Further, as a raw material of the group v constituent element, phosphine (ΡίΪ3), ruthenium (AsH3), etc. may be used. Further, the growth temperature of each layer may be arbitrarily selected, for example, using p-type GaP as a current. In the case of the diffusion layer 1 720, 720 to 77 〇〇 c can be applied, and the other layers can be applied to 600 to 700. (: In the case of using p-type GalnP as the current diffusion layer 1 600, 600 to 700 〇 C can be applied. Further, the carrier concentration, the layer thickness, and the temperature conditions of each layer can be appropriately selected. -25 - .201234651 The compound portion 20 obtained in this manner, but a crystal defect can still be obtained, and the surface of the compound semiconductor layer 30 can also be used. The semiconductor layer 30 has a good surface state with less luminescence. In the element structure, polishing (such as the formation of the electrode of the first and second electrodes) is performed, and the P-type ohmic electrode 12 of the first electrode and the ohmic electrode U of the second electrode are formed on the substrate on which the compound semiconductor layer is formed. The effects of the present invention will be specifically described below by way of a simplification example. Further, the present invention is not limited by the embodiments. In the present embodiment, an example of fabricating the light-emitting diode of the present invention will be specifically described. The light-emitting diode system obtained in the embodiment has an active layer infrared light-emitting diode 'where the active layer contains a well layer and a quantum well structure including a barrier layer of AlGaAs. In this embodiment, for evaluation of characteristics A light-emitting diode lamp in which a light-emitting diode chip is mounted on a substrate is manufactured. (Embodiment 1) In the case of the light-emitting diode of Example 1, first, a π-type GaAs single containing Si doping is used. An epitaxial wafer is formed by sequentially laminating layers of the compound semiconductor layer on the crystalline GaAs substrate.

The GaAs substrate is inclined by ι 5 from the (100) plane toward the (O-1-i) direction. The surface of the surface was set to a growth surface and the carrier concentration was set to 2M 018cni·3. The layer thickness of the GaAs substrate is set to about 0.5 μm. Further, as a layer of the compound semiconductor layer, the following layers are sequentially laminated: an n-type buffer layer containing doped GaAs, a Si-doped AllnP, and a Gal〇p 4〇-reversed structure η -26- • 201234651

A DBR reflective layer, an n-type lower slope coating comprising doped SlqA1〇7Ga〇3)〇5in〇5p, and a lower guiding layer comprising (Al0_3Ga〇.7)〇1In〇1P, comprising (111. .8) Eight 8/(eight 10, and ._9) 〇 5111. 51) 3 pairs of well layers &quot; and barrier layer, including upper layer of (Al0.3Ga0.7)0_5In0.5P, including replacement Miscellaneous § § (eight 10.7 〇 30.3) 0.51110.5 Å]:) type upper coating layer, intermediate layer containing (Al0.5Ga0.5)0.5ln〇.5P film, containing type 3 Current spreading layer of GaP. In the present embodiment, a reduced pressure organometallic chemical vapor deposition method (MOCVD apparatus) was used at a diameter of 76 Å 'thickness (10) (d). ~ On the substrate, the insect crystal grows and combines with the semiconductor layer to form an i-crystal wafer. At the time when the growth of the epitaxial growth layer is made, ‘! The raw materials of the j! family are made of trimethylamine ((ch3)3ai), trimethylgallium ((CH3)3Ga) and trimethylmethane ((CH3)3In) X, which are used as doping materials for Mg. A double (cyclopenta-baked) town (biS-(C5H5)2Mg) e &quot;5?, /Λτ 4 ...; 8) is used. Further, as a doping material for Si, a stone smelting (Si2H6) is used. Further, as a raw material of the group v constituent element, phosphine (PH3) or hydrazine (AsH3) is used. Further, in terms of the growth temperature of each layer, the deformation-adjusting layer containing P-type (four) was grown at 75 (rc), and the other layers were grown at 700 ° C. The buffer layer-containing carrier concentration including GaAs was set to about 2 xi. iScm 3, layer thickness 1, 3 is about 0.5'. The concentration of the lower coating layer is set to about 1 10 cm | the thickness of 3 is about 5 。. The lower guiding layer is undoped and the thickness is about 5 〇. · The layer of undoped (In〇.2Ga〇.8) AS' barrier layer is undoped and has a layer thickness of about 1〇_(Al〇.3Ga0.7)0,5In0 .5P. Another *L* barrier layer. The upper guiding layer has three pairs of well layers and resistance layers and the layer thickness is set to about 50 nm. The upper layer is -27- 1 201234651. The concentration is set to about 8χ1017cm_3, and the layer thickness is set to about Ο.#111 ° The concentration of the intermediate layer carrier is set to about 8xl017cm·3, and the layer thickness is set to about 5〇nm «The concentration of the current diffusion layer containing the GaP is set. It is about 3xl〇18cm_3, and the layer thickness is set to about 1 Ο μ m. The 'DBR reflection layer is alternately layered with 4〇 pairs of carrier concentrations of about lxl018cm·3, layer thickness of about 71nm AllnP, and The sub-concentration is set to about 1 X l 〇 18 cm · 3 The layer thickness is set to about 67 nm of GalnP. Then, on the surface of the current diffusion layer, AuBe is made 0.2 μm, and Au is made to be 1 μm, and the film is sequentially formed by vacuum evaporation. By performing patterning, a Ρ-type ohmic electrode is formed as the first electrode. Then, the light extraction surface on the surface other than the electrode portion is roughened. Next, 'Uu Ge is placed on the back surface of the substrate as the second electrode. In the case where the thickness of each layer of Ni is 0.5 μm, Pt is 〇2 μm, and Au is formed to be 1 μm, the film is sequentially formed by vacuum deposition to form a ohmic electrode. Thereafter, it is performed at 450 〇c. After minute heat treatment, Ni and semiconductor surface portions are alloyed to form low-resistance P-type and n-type ohmic electrodes. Then 'cut using a cutter from the compound semiconductor layer side at intervals of 3 5 μm When it is broken, it is wafer-formed. The sulfurized hydrogen peroxide mixed solution is used to etch and remove the fracture layer and the dirt caused by the cutting, and the light-emitting diode of the first expansion example is obtained. The light-emitting diode lamp of the embodiment of the present invention is mounted on a mounting substrate. The mounting of the light-emitting diode lamp is supported (mounted) by a wafer bonder. - .201234651 After the P-type ohmic electrode and the P-electrode terminal are wire-bonded by a gold wire, they are obtained by sealing with a general epoxy resin. The results of evaluating the characteristics of the light-emitting diode (light-emitting diode lamp) are shown in Table 7. As shown in Table 7, when a current flows between the n-type and p-type ohmic electrodes, infrared light having a peak wavelength of 920 nm is emitted. The forward voltage (Vf) at a current of 20 mA (m A) in the forward direction is about 1.2 volts. Further, the luminous output when the forward current was set to 20 mA was 6.2 mW. Table 7 Substrate Material Luminous Wavelength (nm) Luminous Output _ Forward Voltage (V) DBR Layer Example 1 GaAs 920 6.2 t.2 AlInP/GalnP Example 2 GaAs 920 6.0 1.2 AIGalnP/AIGalnP Example 3 QaAs 920 6.5 1.1 AIGaAs /AIGaAs Selling Example 4 GaAs 870 6.0 1.2 AlInP/GalnP Example 5 GaAs 870 5.7 1.2 AIGalnP/AIGalnP Example 6 GaAs 870 6.2 1.1 AIGaAs/AIGaAs Example GaAs 960 6.0 1.2 AlInP/GalnP Example 8 GaAs 960 5.8 1.2 AIGalnP/AIGalnP Example 9 GaAs 960 6.2 1.1 AIGaAs/AIGaAs Comparative Example 1 GaAs 920 2.0 1.2

Measurement current = 20 mA (Example 2) The light-emitting diode system of Example 2 was produced under the same conditions as in Example 1 except that the structure of the DBR reflection layer was changed. Specifically, the DBR reflective layer is composed of an alternating layer 40 having a carrier concentration of about lxl018cnT3 and a layer thickness of about 71 nm (a layer of AlojGao.do.sIn^P and a carrier concentration of about lxl018cm·3, layer). The thickness of about 68 nm (Al〇.2Ga〇.8) 〇.5In〇.5P layer 0 -29- 201234651 Evaluation of this light-emitting diode (light-emitting diode lamp) ^The result of the heart is as shown in Table 7 As shown in the figure, the emission peak wavelength is 920 nm, and the light emission output (P〇) and the forward voltage (VF) are 6.0 mW and i.2 V, respectively. (Example 3) Example 3 In addition to changing the DBR reflective layer, the light-emitting diode system is made to have a layer with a carrier concentration of Ga〇·]As and a 64 nm specific s 'DBR reflective layer under the same conditions as the embodiment 丨. A layer comprising an alternating layer of about 1 X 1018 cm_3 and a layer thickness of about 71 nm comprising Al〇9 and a carrier concentration of about 1×10 〇18 cm·3 and a layer thickness of about Alo”Ga〇.9As. The results of the characteristics of the (light-emitting diode lamp) are shown in Table 7. The infrared light-emitting output (P〇) and the forward direction of the peak wavelength of 92 〇nm were emitted. The pressure (VF) was 6.5 mW and 1.1 V, respectively. ' 】 (Example 4) The luminescent bipolar system of Example 4 was used except for the use of (1110.12 〇 & 0.88) 八 8 / (eight 10. 丨〇 3. 9 The other parts except the 3 pairs of well layers/barrier layers were fabricated under the same conditions as in Example 。. Evaluation of the characteristics of the light-emitting diode (light-emitting diode lamp) The results are shown in Table 7. The infrared light emission output (P〇) and the forward voltage (Vf) of the peak wavelength of 87 〇nm were 6. 〇mW and 1.2 V, respectively. (Example 5) The light-emitting diode system is the same as the embodiment except that three pairs of well layers/barrier layers including (In〇.i2Ga(K88)As/(Al.丨Ga〇.9)〇.5In〇.5P are used. 2, the same conditions were used. That is, except that the configuration of the DBR reflective layer was changed, the rest was produced under the same conditions as in Example 4. 201234651 Evaluation of the characteristics of the light-emitting diode (light-emitting diode lamp) The results are shown in Table 7. Infrared light having a peak wavelength of 870 nm was emitted, and the light-emitting (P〇) and forward voltage (VF) were 5.7 mW and 1.2 V, respectively. (Example 6) Example 6 The photodiode system except the 3 pairs of well layers/barrier layers containing (In〇,丨2Ga〇.88)As/(Al〇,丨Ga〇.9)〇_5In〇.5P Example 3 was produced under the same conditions. That is, the same portions as those of the fourth embodiment were produced except that the configuration of the BD reflective layer was changed. The results of evaluating the characteristics of this light-emitting diode (light-emitting diode lamp) are shown in Table 7. The infrared light having a peak wavelength of 87〇11111 was emitted, and the light-emitting output (P〇) and the forward voltage (VF) were 6.2 mW and 1.1 v, respectively. (Example 7) The light-emitting diode system of Example 7 was used except for the (In0.25Ga〇.75)AS/(Al0., Ga0.9)0.5In〇.5P2 3 pair of card layer/barrier layer. The rest were produced under the same conditions as in Example 。. The results of evaluating the characteristics of this light-emitting diode (light-emitting diode lamp) are shown in Table 7. The infrared light having a peak wavelength of 96 〇 nm is emitted, and the light-emitting output (P〇) and the forward voltage (VF) are respectively 6. 〇mW and ι.2ν. (Example 8) The light-emitting diode system of Example 8 was used except for the three-layered layer containing (In〇.25Ga〇'75)As/(A1〇lGa〇9)〇5ln〇51&gt; The rest of the section was produced under the same conditions as the real (four) 2. That is, the rest was produced under the same conditions as in Example 7 except that the configuration of the smectic layer was changed. and also

-3 1- S 201234651 The results of evaluating the characteristics of this light-emitting diode (light-emitting diode lamp) are shown in Table 7. Infrared light having a peak wavelength of 960 nm was emitted, and the light-emitting output (P〇) and the forward voltage (VF) were 5.8 mW and 1.2 V, respectively. (Example 9) The light-emitting diode system of Example 9 was used except for the 3 pairs of well layers/barrier layers including (In0_25GaQ.75)As/(A1〇iGa〇9)〇5ln〇5p. It was produced under the same conditions as in Example 3. That is, the rest was produced under the same conditions as in Example 7 except that the configuration of the DBR reflective layer was changed. The results of evaluating the characteristics of this light-emitting diode (light-emitting diode lamp) are shown in Table 7. The peak wavelength of the emission is infrared light, and the light-emitting output (P〇) and the forward voltage (VF) are 6.2 mW and 1.1 V, respectively. (Comparative Example 1) The light-emitting diode system of Comparative Example 1 was formed by a liquid phase epitaxy method of a conventional technique. Changed to have a GaAs substrate to include AVQiGa. The layer of 99As serves as a light-emitting diode of a light-emitting portion of a double heterostructure having a light-emitting layer. Specifically, the production of the light-emitting diode of Comparative Example 1 was carried out in the following manner. The liquid crystal epitaxy method is performed on the GaAs single crystal substrate of the n-type (100) plane. The η-type upper cladding layer including Α1〇. ο! Ga〇. 99 As is set to 50 μm, and will contain Alo. The light-emitting layer of doped Si of wGao.wAs is set to 20 μm, and the p-type lower cladding layer containing Al〇.7Ga〇.3As is set to 20 μm, which is transparent to the emission wavelength and contains i〇.25Ga〇.75As. The p-type thick film layer was prepared to be 60 μm. After the epitaxial growth, the GaAs substrate is removed. Next, an n-type ohmic electrode having a diameter of ΙΟΟμηη was formed on the surface of the upper cladding layer of the n-type AlGaAs at intervals of 350 μm. On the back side of the thick layer of p-type AlGaAs-32-201234651, the p-type ohmic electrode of the Pm is 以2佼. After that, the light-emitting diode wafer of Comparative Example 1 including the "de-mainum electrode" and the plurality of electrodes was obtained by cutting the separator at intervals of 35 Å to remove the fracture layer. ^ The results of evaluating the characteristics of the light-emitting lamp to which the light-emitting diode of Comparative Example i was mounted are shown in Table 1. The body is shown in the table. It flows between the n-type and p-type ohmic electrodes, and emits infrared light with a peak wavelength of 92Gnm. The forward voltage (Vf) when a current of 2 mA (mA) flows in the forward direction is about Further, the luminous output when the forward current was set to 20 mA was 2 mW. Further, when any of the comparative examples was compared with the embodiment of the present invention, the output was lower than that of the embodiment of the present invention.产业 [Industrial Applicability] The light-emitting diode of the present invention can be used as a light-emitting diode product which has high output and high efficiency and emits infrared light having an emission peak wavelength of 850 nm or more and especially 900 nm or more. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of a light-emitting diode according to an embodiment of the present invention. Fig. 2 is an explanatory view showing an active layer constituting a light-emitting diode according to an embodiment of the present invention. FIG. 4 is a graph showing the correlation between the layer thickness of the card layer of the light-emitting diode of the embodiment and the peak wavelength of the light emission. FIG. 4 is a view showing the In composition (XI) and the thickness of the well layer of the taste layer of the light-emitting diode according to an embodiment of the present invention. Graph of correlation with luminescence peak wavelength

S-33-201234651 Fig. 5 is a phase diagram of the In composition (XI) of the light-emitting diode and the emission peak wavelength and its light-emitting output according to an embodiment of the present invention. Fig. 6 is a graph showing the correlation between the number of pairs of light-emitting diode barrier layers and the light-emitting output according to an embodiment of the present invention. Fig. 7 is a graph showing the correlation between Y1 and the light-emission output of the composition formula of the light-emitting diode according to the embodiment of the present invention. FIG. 7B shows the correlation of the light-emitting output of the composition formula of the barrier layer of the comparative example. Chart. Fig. 8 is a graph showing the pairing of the well layer and the barrier layer in the correlation between the convection and the light-emitting output in the light-emitting diode according to the embodiment of the present invention. [Description of main component symbols] 1 GaAs substrate 2 Buffer layer 3 DBR reflective layer 3a DBR reflective layer first structural layer 3b DBR reflective layer second structural layer 5 Lower cladding layer (first cladding layer) 6 Lower guide Layer (second guiding layer) 7 active layer 8 upper guiding layer (second guiding layer) 9 upper cladding layer (second cladding layer) 1〇 current diffusion layer 12 p-type ohmic electrode (first electrode) The dependence of the Y1 and the forward electric number on the Shaanxi and the barrier layers of the map of the -34-

S 201234651 13 n-type ohmic electrode (second electrode) 15 well layer 16 barrier layer 20 light-emitting portion 30 compound semiconductor layer 100 light-emitting diode -3 5-

Claims (1)

201234651 VII. Patent application scope: 1. A light-emitting diode, which is a light-emitting diode sequentially on a substrate and a light-emitting portion, wherein: the light-emitting portion has: an active layer having a well layer and a resistor The barrier layer includes a composition formula (InxlGai_xl) As, wherein the barrier layer comprises a composition formula (AlX2Ga丨.Χ2)Υ1Ιηι.γιΡ '0&lt;Υ1^1; a first guiding layer and a second guiding layer, etc. Including the composition formula (Α1χ3〇&amp;ι.χ3)Υ2ΐηι.γ2Ρ, 0&lt;Y2 S 1 ; and the first and second cladding layers, which are sandwiched by the guiding layer and the second guiding layer The aforementioned activity (Alx4Gai.x4) Yln1-YP, wherein 〇$ Χ4$1, 2 · as in the light-emitting diode of claim 1, the XI of the composition formula is O^XiSO.3. 3. If the light-emitting diode of the second application of the patent scope is applied, the XI represented by the composition formula is O.igXlSOj. 4. In the case of the light-emitting diode of claim 1, the layer of the layer is alternately layered from 1 〇 to 50 Å. 5 · As in the light-emitting diode of the fourth application patent range, the two different layers are different from each other. p consists of a layer of (AlXhGai_xh)Y3lni-Y3P, Y3 = 0.5; and a laminated structure with a DBR reflective layer, The 〇S X1 $1; the resistance, wherein OS X2S 1 sandwiches the active layer, wherein 0 S X3 $1, &gt; is not separated by the first layer and contains a composition of 0 &lt; γ$ 1 〇 Wherein the two layers of the well layer in which the aforementioned DBR are opposite are formed by a combination of the foregoing refractive index white seed layers: wherein 0 &lt;Xhu, -36- 201234651 comprises a layer of (AlxiGa^xOnlni-YsP, wherein 〇$χι&lt; ι, Y3 = 〇.5; the composition difference A1 of the two layers AX=xh-xl is greater than or equal to 〇5. 6. The light-emitting diode according to item 4 of the patent application, wherein the two refractive indexes are different The layer system comprises a combination of a layer of Gainp and a layer comprising All nP. The light-emitting diode of claim 4, wherein the two layers having different refractive indices are composed of two layers different from each other. Ji He: A layer containing AIxlGa丨-x丨As, where O.lsxisl; and the package a layer of AlxhGa^xhAs, wherein O.lSxhSl; a difference in composition of A1 of two layers Δχ = χ1ι_χ1 is greater than or equal to 〇$. 8. The light-emitting diode of claim 1, wherein the surface of the light-emitting portion The current diffusion layer is provided on the surface opposite to the DBR reflection layer.