201211703 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種曝光裝置及光源裳置，更詳細而言，本 發明係關於一種用於電子工業用之印刷基板、半導體或液晶 顯示器製造用途之曝光裝置、及使用於該等曝光裝置等之光 . 源裝置。 【先前技術】 例如，於電子工業用之印刷基板或半導體晶圓、液晶顯示 器製造用玻璃基板等之處理步驟中，通常使用利用光微影法 之表面圖案化技術。習知’例如於印刷基板之製造步驟中， 係利用塗布或積層等手法’於印刷基板上形成感光材料（具 有感光性之樹脂等）之覆膜，並介隔形成所需圖案之光罩進 行曝光而使圖案形成於該感光材料之覆膜上。 近年來，不使用光罩而是採用藉由使用光調變元件、例如 數位微鏡裝置（DMD ’ Digital Micromirror Device)所調變之 光進行曝光，直接描緣圖案即被稱為直寫（direct writing)之 曝光方式。 [先前技術文獻] [專利文獻] 專利文獻1 :日本專利特開2003-332221號公報 專利文獻2 :日本專利特開2〇〇6_133635號公報 【發明内容】 100127353 3 201211703 (發明所欲解決之問題） 於專利文獻1所揭示之直寫式曝光裝置中’雖然使用燈作 為光源，但通常用於此種裝置之超高壓水銀燈存在者大型且 耗電量大、壽命短之問題。因此，亦提案有如專利文獻2 所揭示之使用耗電量少且壽命長之發光二極體(LED，Light Emitting Diode)作為光源。 然而，有時需要根據曝光之對象物即感光材料之特性，照 射波長帶相對較寬之光，而使用照射光之波長帶較窄之led 將無法獲得所需之特性，導致圖案化無法順利進行。例如對 抗焊劑之曝光，由於必須照射360〜390 nm附近之波長帶相 對較寬之光’故僅照射來自在365 nm附近具有波峰之單一 波長之LED之光將無法充分曝光，存在著抗焊劑之圖案剖 面變成倒錐形等缺陷。 相對於此，雖然亦可考慮將專利文獻2所揭示之光源，混 用2種發出不同波長之光的led，但若每一波長之LED數 減少’就會變成無法獲得足以進行曝光之光量。 本發明係鑒於上述問題而完成者，其目的在於提供一種耗 電量少壽命長’且可將所需波長帶之光以所需之光量有效率 地射出之光源裝置及曝光裝置。 (解決問題之手段） 於申請專利範圍第1項所記載之發明，其特徵在於具備： 第1光源陣列，其係排列有複數個具有射出第1波長特性之 100127353 4 201211703 光的發光部之光源元件；第1透鏡陣列，其係排列有複數個 形成上述第1光源陣列之各光源元件的發光部之放大影像 之透鏡；第2光源陣列，其係排列有複數個具有射出第2 波長特性之光的發光部之光源元件；第2透鏡陣列，其係排 列有複數個形成上述第2光源陣列之各光源元件之發光部 的放大影像之透鏡；光學合成元件，其係將上述第1透鏡陣 列所形成之上述第1光源陣列發光部之影像與上述第2透鏡 陣列所形成之上述第2光源陣列發光部之影像疊合而形成 合成影像；及均勻化元件，其係使上述光學合成元件所合成 之合成影像之光束成為均勻之照度分布之光束射出。 於申請專利範圍第2項所記載之發明，係如申請專利範圍 第1項所記載之光源裝置，其中，進一步具備有：第3透鏡 陣列，其係使上述光學合成元件所形成各光源元件之每一發 光部之合成影像的光束之主光線平行於光軸；及雙側遠心 (telecentric)之第1成像光學系統，其係將自上述第3透鏡陣 列所射出之上述合成影像縮小投影至上述均勻化元件之入 射端。 於申請專利範圍第3項所記載之發明，係如申請專利範圍 第1項所記載之光源裝置，其中，上述第1透鏡陣列係將上 述第1光源陣列之各光源元件之發光部放大投影為該光源 元件之排列間距之大小，上述第2透鏡陣列係將上述第2 光源陣列之各光源元件之發光部放大投影為該光源元件之 100127353 5 201211703 排列間距之大小。 於申請專利範圍第4項所記载之 第1項所記载之光源裝置，其中，進二步夏2^利範圍 化元件射出之光束投影錢定之照明㈣'備有=述均勻 系統。 飞的弟2成像光學 於申請專利範圍第5項所記載之發明， 第1項所記载之光源裳置，其中 I專利範圍 光學系統。 4均勾化元件係積分器 於申請專利範圍第6項所記載之發 1項所記載之光源裝置，其中，上^°申請專利範圍第 於申請專利範圍第7項所記载之元件係分光鏡。 特徵在於具備：申請專利範圍第j至6項糸—種曝光裝置，其 光調變元件’其係由此光_照明項 糸，.先，其係將由上述光調變元件所調變 又心先子 物；及掃描機構，錢使±魏 ^ A、至描繪對象 物進行相對移動而掃描上述描!會對象:糸統與上述插繪對象 於申請專利範圍第8項所記載 其特徵在於具備:申請專利範圍第:項所=光裝置’ 先調變元件，其係由此光源裝先源裝置； 係將由上述光調變元件所調變二、、:明，投影光學系統，其 覆膜之描料象物；及掃描機構，发^至形成有抗焊劑之 與上述騎對象物進行相 ·使上述投影光學系統 _53 多動而㈣上輯對象物;且 6 201211703 上述第1光源陣列之發光元件係包含射出在波長385 nm :近tr峰之光之發光部，上述第2光源陣列之發光元 A糸匕含射出在波長365 nm附近具有波峰之光之發光 和上述分光鏡係配置為使來自上述第i光源陣列之光穿 同時將來自上述第2光_列之光反射㈣成合成影 像。 (發明效果） 旦根據申#專條圍第丨至6項所記載之發明，可獲得耗電 量少、壽命長且可射出所需波長帶之光進行曝光之光源裝 置。 根據申請專利範圍第2項所記载之發明，可特別有效率地 射出所需形狀之光束。 I據申明專利範圍第7項所記載之發明，可獲得耗電量 少、壽命長且可射出所需波長帶之光而進行曝光之曝光裝 置。 根據申3月專利乾圍第8項所記載之發明，可獲得可射出具 有特別適於^焊劑之曝光之波長特性之光而進行曝光之曝 光裝置。 【實施方式】 曝光裝置之構成與動作之概要> 圖1係表示本發明一實施形態之曝光裝置1之構成的示意 圖。於圖1中’為了表示裝置之内部結構而以虛線表示裝置 100127353 201211703 之外形。曝光裝置1係於藉由將抗焊劑之覆膜塗布或積層在 表面所形成之印刷基板（以下’簡稱為基板上曝光既定之 圖案而形成圖案者，且具有保持基板9之平台2、使平台2 朝圖1中之Y方向移動之平台移動機構31、使光束朝向基 板9射出之頭部4、使頭部4朝圖丨中之X方向移動之頭部 移動機構32、及連接於此等平台移動機構31、頭部4及頭 部移動機構32之控制部5。 頭部4係内建包含射出如下所述之既定波長的光束之光 源單元4卜及設置有以格狀排列之微鏡組之DMD42之光學 系統’且藉由利用DMD42之微鏡組反射來自光源單元41 之光束生成經空間調變之光束，並射出至由平台2所保持之 基板9進行曝光而形成圖案。 針對光學系統之概要進行說明。自光源單元41所射出之 光束，係經由桿積算器433、透鏡434a、透鏡434b及鏡435 引導至鏡436 ’鏡436係將光束一面聚光一面引導至 DMD42。入射至DMD42之光束係以既定之入射角（例如24 度)均勻地照射於DMD42之微鏡組。如上所述，照明光學 系統43a係構成為藉由光源單元41、桿積算器433、透鏡 434a、透鏡434b、鏡435及鏡436將來自光源單元41之光 引導至DMD42。 僅由來自DMD42之各微鏡中為既定之姿勢(於根據下述 DMD42之光照射之說明中’對應於on狀態之姿勢）之微鏡 100127353 8 201211703 之反射光所形成之光束（即，經空間調變之光束）係朝變焦透 鏡437入射，且由變焦透鏡437調整倍率並經由鏡438引導 至投影透鏡439。而且，來自投影透鏡439之光束係對於微 鏡、且朝光學共輥之基板9上之區域照射。如此，於曝光裝置 1中，投影光學系統43b係構成為藉由變焦透鏡437、鏡 438、及投影透鏡439，將來自各微鏡之光引導至基板9上 之對應之光照射區域。 平口 2係固定於線性馬達即平台移動機構31之移動體 側，且藉由控制部5對平台移動機構31進行控制，使由來 自U叙組之光所照射之光照射區域組(設為_個微鏡對應於 個光‘^射區域)於光阻膜上朝圖丨中之γ方向進行相對移 動17光照射區域組係對於頭部4相對地固定，且藉由基 板9之移動使光照射區域組於基板9上移動。 θ ^ 頭部4係固定於頭部移動機構％之移動體側，且朝與光 照射區域組之主掃描方向㈤巾之γ方向）垂直之副掃描方 向(Χ方向）間歇性地移動。即，每當主掃描結束時，頭部移 動機構32係將頭部4朝χ方向移動至下—個主掃描之開始 位置。然後’藉由此平台移動機構31與頭部移動機構^ 之驅動’使頭部4掃描基板9表面並進行曝光。 且圖2係表不DMD42之圖式。dmd42係於矽基板々Μ上 -有以格狀且等間隔地排列多個微鏡（以作為朝相互垂直之 2方向排列為M _行者進行以下說明）之微倾422之空 100127353 9 201211703 間光調變裝置’並依照寫入至對應於各微鏡之記憶單元之資 料，使各微鏡因靜電場作用而傾斜既定之角度。 若自圖1所示之控制部5對DMD42輸入重置脈衝，則各 微鏡係依照被寫入至對應之記憶單元之資料，以反射面之對 角線為軸一起傾斜成既定之姿勢。藉此，照射至DMD42之 光束將對應各微鏡之傾斜方向進行反射，而進行對光照射區 域之光照射的ΟΝ/OFF。即，若記憶單元中被寫入表示〇N 之資料之微鏡接收到重置脈衝之信號，則入射至該微鏡之光 將朝變焦透鏡437反射，而將光照射至所對應之光照射區 域。.又，若使微鏡成為OFF狀態，則微鏡將使入射之光朝 與變焦透鏡437不同之既定位置反射，而使得所對應之光照 射區域成為未導入光之狀態。 然後藉由相關之構成，基板9之表面係一邊由頭部4相對 地進行掃描，一邊照射有經DMD42所調變之光束，而於基 板9表面之抗焊劑上形成既定之圖案。 < 2.光學系統之細節> 接著針對光學系統之細節進行說明。圖3係表示包含光 單7L 41之照明光學系統43a的一部分之示意性斜視圖， 4係光源單元41之側視圖，圖5係表示摘錄光源單元 -部分之側視圖，圖6係表示LED晶片之外觀及其投影 像之圖式’圖7係表示第1LED陣列4U、第1透鏡陣列57 及第3透鏡陣列416之斜視圖。 100127353 10 201211703 光源單元41之構成，係包含第1LED陣列々η、第】透 鏡陣列412、第2LED _化、第2透鏡陣列4M、分光 鏡415、第3透鏡陣列416、及第1成像光學系統417。刀 第1㈣陣列411，係構成為於基板他上排列12個呈 有射出中心波長38^(第W長特性)之光的發光部之LED 晶片（LED晶粒）411a〇LED晶片仙係為！ _見方之大 小，且收納於陶究封裝體（省略圖示）之内部。咖晶片4ua 係因電極陰景彡之影料存在著不發光部分，而朗丨_見 方之整面均會發光。此實卿態之咖w 411a，係如圖 6(A)所示在表面之Q8mm見方之範圍内，形成有於圖中以 標示=線所表示之發光部4Uc。第1led陣列4ιι係將該 LED晶片411&以10 mm間距（圖5中之d=i〇 m叫且縱橫 二維地排列成3x4之方式，將各LED晶片41U之陶究封裝 體安裝於基板他上。又’於各LED晶片41U之前表面， δ又置有用以保護表面之防護玻璃411d。 第1透鏡陣列412，係將形成第1LED陣列411之各LED 曰曰片411a的發光部411c之影像之透鏡組，對應於LED晶 片 &之排列且以相同之縱橫二維地排列3 X4之12個而形 成者其構成為每1個LED晶片411a，自LED晶片411a 側觀察，具有由雙凸面之第1透鏡412a與平凸形之第2透 鏡412b之2片所構成之透鏡組，並將該等組入框架4i2e。 (圖7係透視基板411b而標示第1透鏡412a)此等第1透鏡 100127353 201211703 412a與第2透鏡412b之透鏡組，係將LED晶片411a中之 存在有發光部411c之0.8 mm見方之大致正方形的區域放大 投影為該各LED晶片41 la之排列間距（以圖5中以d表示) 之大小，即10 mm見方之大小。然後，所投影之發光部411c 之影像恰好將構成下述第3透鏡陣列416之各個透鏡416a 之整面覆蓋。 第2LED陣列413 ’係構成為於基板413b上排列12個具 有射出中心波長365 nm(第2波長特性）之光的發光部之 LED晶片413a。此第2LED陣列413及LED晶片413a之 構成’除了 LED晶片413a之射出光之波長以外，係與圖5 所示之第1LED陣列411、LED晶片411a相同，且將LED 晶片413a以10 mm間距且縱橫二維地排列為3x4之方式， 將各LED晶片413a之陶瓷封裝體安裝於基板413b上。又， 於各LED晶片413a之前表面，設置有用以保護表面之防護 玻璃413d。 第2透鏡陣列414之構成，係與上述第1透鏡陣列412 相同，且將形成第2LED陣列413之各LED晶片413a發光 部413c之影像之透鏡組，對應於LED晶片413a之排列， 以相同之縱橫二維地排列3x4之12個而形成者，其構成為 每1個LED晶片413a，自LED晶片413a側觀察，具有由 雙凸面之第1透鏡414a與平凸形之第2透鏡414b之2片所 構成之透鏡組，並將該等組入框架414c。此等第1透鏡414a 100127353 12 201211703 與第2透鏡414b之透鏡組，^ 係與圖5所示之第1透鏡陣列201211703 VI. Description of the Invention: [Technical Field] The present invention relates to an exposure apparatus and a light source, and more particularly to a printed substrate, semiconductor or liquid crystal display for electronic industry. The exposure device and the light source device used in the exposure device or the like. [Prior Art] For example, in the processing steps of a printed circuit board or a semiconductor wafer for an electronic industry, a glass substrate for liquid crystal display manufacturing, or the like, a surface patterning technique using a photolithography method is generally used. For example, in the manufacturing step of a printed substrate, a film of a photosensitive material (a photosensitive resin or the like) is formed on a printed substrate by a method such as coating or lamination, and the mask is formed to form a desired pattern. The pattern is formed on the film of the photosensitive material by exposure. In recent years, instead of using a photomask, exposure is performed by using light modulated by a light modulation element such as a DMD 'Digital Micromirror Device. The direct trace pattern is called direct write (direct Writing). [Prior Art] [Patent Document] Patent Document 1: Japanese Laid-Open Patent Publication No. 2003-332221 (Patent Document 2) Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. In the direct writing type exposure apparatus disclosed in Patent Document 1, although a lamp is used as a light source, an ultrahigh pressure mercury lamp generally used for such a device has a large size, a large power consumption, and a short life. Therefore, as disclosed in Patent Document 2, a light-emitting diode (LED) having a small power consumption and a long life has been proposed as a light source. However, it is sometimes necessary to illuminate a relatively wide wavelength band depending on the characteristics of the object to be exposed, that is, the photosensitive material, and the LED having a narrow wavelength band of the irradiation light cannot obtain the desired characteristics, resulting in that the patterning cannot be smoothly performed. . For example, for the exposure of the anti-flux, since it is necessary to irradiate a relatively wide wavelength band of light near 360 to 390 nm, light that is only irradiated with an LED having a single wavelength having a peak near 365 nm cannot be sufficiently exposed, and there is a solder resist. The pattern profile becomes a defect such as an inverted cone. On the other hand, it is also conceivable to mix two kinds of LEDs emitting light of different wavelengths with the light source disclosed in Patent Document 2. However, if the number of LEDs per wavelength is decreased, it becomes impossible to obtain an amount of light sufficient for exposure. The present invention has been made in view of the above problems, and an object thereof is to provide a light source device and an exposure apparatus which can efficiently emit light of a desired wavelength band with a desired amount of light while having a small power consumption and a long life. The invention according to claim 1, characterized in that the invention provides a first light source array in which a plurality of light sources having a light-emitting portion that emits light of a first wavelength characteristic of 100127353 4 201211703 are arranged. The first lens array is a lens in which a plurality of enlarged images of the light-emitting portions of the light source elements of the first light source array are arranged, and the second light source array is arranged with a plurality of second wavelength characteristics. a light source element of a light emitting portion; a second lens array in which a plurality of lenses for forming an enlarged image of a light emitting portion of each of the light source elements of the second light source array are arranged; and an optical combining element for the first lens array And forming an image of the first light source array light-emitting portion formed by the second light source array and forming a composite image; and a homogenizing element The beam of the synthesized synthetic image is emitted as a beam of uniform illumination distribution. The light source device according to the first aspect of the invention, further comprising: a third lens array, wherein each of the light source elements is formed by the optical composite element The chief ray of the light beam of the composite image of each of the light-emitting portions is parallel to the optical axis; and the two-dimensional telecentric first imaging optical system reduces and projects the composite image emitted from the third lens array to the above Homogenize the incident end of the component. The light source device according to the first aspect of the invention, wherein the first lens array enlarges and projects the light-emitting portion of each of the light source elements of the first light source array The second lens array enlarges and projects the light-emitting portions of the respective light source elements of the second light source array to the size of the arrangement pitch of the light source elements of 100127353 5 201211703. In the light source device according to the first item of the fourth aspect of the invention, in the second embodiment, the light beam emitted from the component is projected into the illumination of the light (4) 'there is a uniform system. Flying Brother 2 Imaging Optics In the invention described in claim 5, the light source described in the first item is placed, and the patent range is optical system. (4) The light source device according to the item 1 of the application of the patent application of the present invention, wherein the element is in the range of the application of the patent application. mirror. The invention is characterized in that: the invention has the scope of the invention, the j-th exposure device, wherein the light-modulating component is caused by the light-lighting component, and the system is modulated by the light-modulating component. The first object; and the scanning mechanism, the money makes ±Wei A, and the object to be drawn is relatively moved to scan the above description! The object: the system and the above-mentioned interpolated object are described in item 8 of the patent application scope, and are characterized by : Patent application scope: Item = optical device' First modulation component, which is the source device installed by the light source; the system will be modulated by the above-mentioned optical modulation component, and the projection optical system is coated. And the scanning mechanism, the surface of the object to be imaged by the formation of the solder resist, the multiplication of the projection optical system _53, and (4) the object of the upper object; and 6 201211703 the first light source array The light-emitting element includes a light-emitting portion that emits light having a wavelength of 385 nm: a near-tr peak, and the light-emitting element A of the second light source array includes light emitted from a light having a peak near a wavelength of 365 nm, and the spectroscopic system is configured as Making the ith source array from The column light is simultaneously reflected (four) from the second light column to form a composite image. (Effect of the Invention) According to the invention described in the Japanese Patent Application No. Hei-6, a light source device which consumes less power and has a long life and can emit light of a desired wavelength band can be obtained. According to the invention described in the second aspect of the patent application, the light beam of a desired shape can be emitted particularly efficiently. According to the invention described in claim 7, the exposure apparatus which emits light of a desired wavelength band and emits light of a desired wavelength band can be obtained. According to the invention described in the eighth paragraph of the Japanese Patent Application Serial No. 8, an exposure apparatus capable of emitting light having a wavelength characteristic particularly suitable for exposure of a solder can be obtained. [Embodiment] The outline of the configuration and operation of the exposure apparatus> Fig. 1 is a schematic view showing the configuration of an exposure apparatus 1 according to an embodiment of the present invention. In Fig. 1, the device 100127353 201211703 is shown in a broken line in order to indicate the internal structure of the device. The exposure apparatus 1 is a printed circuit board formed by coating or laminating a film of a solder resist on a surface (hereinafter, a pattern is formed by simply exposing a predetermined pattern on a substrate, and having a platform 2 for holding the substrate 9 and a platform 2 a table moving mechanism 31 that moves in the Y direction in FIG. 1, a head portion 4 that emits a light beam toward the substrate 9, a head moving mechanism 32 that moves the head portion 4 in the X direction in the figure, and a connection thereto The platform moving mechanism 31, the head 4, and the control unit 5 of the head moving mechanism 32. The head unit 4 is internally provided with a light source unit 4 that emits a light beam of a predetermined wavelength as described below, and a micro mirror provided with a lattice arrangement. The optical system of the group of DMDs 42 is formed by using a micromirror of the DMD 42 to reflect the light beam from the light source unit 41 to generate a spatially modulated beam and projecting to the substrate 9 held by the stage 2 for exposure to form a pattern. The outline of the system will be described. The light beam emitted from the light source unit 41 is guided to the mirror 436 by the rod totalizer 433, the lens 434a, the lens 434b, and the mirror 435. The mirror 436 guides the light beam to the DMD 42 while collecting the light beam. The light beam incident on the DMD 42 is uniformly irradiated to the micromirror of the DMD 42 at a predetermined incident angle (for example, 24 degrees). As described above, the illumination optical system 43a is configured by the light source unit 41, the rod totalizer 433, and the lens 434a. The lens 434b, the mirror 435, and the mirror 436 guide the light from the light source unit 41 to the DMD 42. Only the respective postures from the respective micromirrors from the DMD 42 (in the description of the light irradiation according to the DMD 42 described below) correspond to the on state. The light beam formed by the reflected light of the mirror 100127353 8 201211703 (ie, the spatially modulated light beam) is incident toward the zoom lens 437, and the magnification is adjusted by the zoom lens 437 and guided to the projection lens 439 via the mirror 438. Further, the light beam from the projection lens 439 is irradiated to the region on the substrate 9 of the optical common roller with respect to the micromirror. Thus, in the exposure device 1, the projection optical system 43b is configured by the zoom lens 437, the mirror 438, And the projection lens 439 guides the light from each micromirror to the corresponding light irradiation region on the substrate 9. The flat opening 2 is fixed to the moving body side of the linear motor, that is, the platform moving mechanism 31, and The system 5 controls the platform moving mechanism 31 so that the light irradiation region group (set as _ micromirrors corresponding to the light beam) irradiated by the light from the U group is directed onto the photoresist film. The gamma direction is relatively moved. The 17 light irradiation region group is relatively fixed to the head portion 4, and the light irradiation region group is moved on the substrate 9 by the movement of the substrate 9. θ ^ The head portion 4 is fixed to the head movement The moving body side of the mechanism % is intermittently moved in the sub-scanning direction (Χ direction) perpendicular to the gamma direction of the main scanning direction (five) of the light irradiation region group. That is, each time the main scan ends, the head moving mechanism 32 moves the head 4 in the χ direction to the start position of the next main scan. Then, by the driving of the stage moving mechanism 31 and the head moving mechanism ^, the head 4 scans the surface of the substrate 9 and exposes it. And Figure 2 shows the diagram of DMD42. Dmd42 is attached to the 矽 substrate - 有 100 100 100 100 100 100 100 127 100 127 127 100 127 127 127 127 127 127 127 100 100 100 100 100 127 100 127 100 100 100 100 100 100 100 100 100 100 100 100 100 100 127 100 100 100 100 100 100 100 The light modulation device 'and according to the data written to the memory unit corresponding to each micromirror, causes each micromirror to tilt a predetermined angle due to the action of the electrostatic field. When the control unit 5 shown in Fig. 1 inputs a reset pulse to the DMD 42, each micromirror is tilted into a predetermined posture with the diagonal of the reflecting surface as an axis in accordance with the data written in the corresponding memory unit. Thereby, the light beam irradiated to the DMD 42 is reflected in the oblique direction of each micromirror, and ΟΝ/OFF of the light irradiation to the light irradiation region is performed. That is, if the micromirror in which the data representing 〇N is written in the memory unit receives the signal of the reset pulse, the light incident on the micromirror will be reflected toward the zoom lens 437, and the light is irradiated to the corresponding light irradiation. region. Further, if the micromirror is turned OFF, the micromirror will reflect the incident light toward a predetermined position different from the zoom lens 437, so that the corresponding illumination region becomes a state in which no light is introduced. Then, with the configuration of the substrate 9, the surface of the substrate 9 is scanned by the head portion 4, and the light beam modulated by the DMD 42 is irradiated to form a predetermined pattern on the solder resist on the surface of the substrate 9. <2. Details of Optical System> Next, details of the optical system will be described. 3 is a schematic perspective view showing a part of the illumination optical system 43a including the light sheet 7L 41, a side view of the 4-series light source unit 41, FIG. 5 is a side view showing the excimer unit-part, and FIG. 6 is a view showing the LED chip. FIG. 7 is a perspective view showing the first LED array 4U, the first lens array 57, and the third lens array 416. 100127353 10 201211703 The light source unit 41 includes a first LED array 、n, a lenticular lens array 412, a second LED ray, a second lens array 4M, a beam splitter 415, a third lens array 416, and a first imaging optical system. 417. The first (fourth) array 411 of the knives is an LED chip (LED die) 411a 〇 〇 〇 ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! _ See the size of the square, and it is stored inside the ceramic package (not shown). The 4ua of the coffee chip has a non-lighting part due to the shadow of the electrode, and the entire surface of the reading is illuminated. The coffee w 411a of this real state is formed in the range of Q8 mm square of the surface as shown in Fig. 6(A), and the light-emitting portion 4Uc indicated by the mark = line is formed in the figure. The first LED array 411 & is mounted on the substrate by the LED chip 411 & at a pitch of 10 mm (d=i〇m in FIG. 5 and two-dimensionally arranged in a three-dimensional manner). Further, on the front surface of each LED chip 41U, δ is provided with a cover glass 411d for protecting the surface. The first lens array 412 is formed by the light-emitting portion 411c of each of the LED dies 411a of the first LED array 411. The lens group of the image is formed in accordance with the arrangement of the LED chips & and is formed by arranging two of the 3 X4 in the same vertical and horizontal directions. The lens group is formed as one LED wafer 411a, and is viewed from the side of the LED wafer 411a. A lens group composed of two convex first lenses 412a and two flat convex second lenses 412b is incorporated into the frame 4i2e. (FIG. 7 is a perspective substrate 411b and the first lens 412a is labeled) The lens group of the lens 100127353 201211703 412a and the second lens 412b is an enlarged projection of a substantially square region of 0.8 mm square in the LED wafer 411a in which the light-emitting portion 411c is present, and the arrangement pitch of the LED chips 41 la is as shown in the figure. 5 is represented by d), that is, 10 mm square Then, the image of the projected light-emitting portion 411c is just covered with the entire surface of each of the lenses 416a constituting the third lens array 416. The second LED array 413' is configured to have 12 emission center wavelengths 365 arranged on the substrate 413b. The LED chip 413a of the light-emitting portion of the light of the nm (second wavelength characteristic). The second LED array 413 and the LED chip 413a constitute the first LED array shown in FIG. 5 except for the wavelength of the light emitted from the LED wafer 413a. 411. The LED chips 411a are the same, and the LED chips 413a are arranged three-dimensionally in a vertical and horizontal manner at a pitch of 10 mm, and the ceramic package of each of the LED chips 413a is mounted on the substrate 413b. Further, before each of the LED chips 413a The cover glass is provided with a cover glass 413d for protecting the surface. The second lens array 414 is configured similarly to the first lens array 412, and forms a lens group of the image of the light-emitting portion 413c of each of the LED chips 413a of the second LED array 413. Corresponding to the arrangement of the LED chips 413a, 12 of 3x4 are arranged two-dimensionally in the same aspect, and each of the LED chips 413a is configured to have a double convex surface as viewed from the side of the LED wafer 413a. A lens group composed of two sheets of the first lens 414a and the second convex lens 414b is incorporated into the frame 414c. The lens groups of the first lens 414a 100127353 12 201211703 and the second lens 414b, ^ And the first lens array shown in FIG.
416之各個透鏡416a之整面覆蓋。 於第1透鏡陣列412、與其所形成之第1LED陣列411之 各LED晶片411a發光部4Uc之影像之間，係傾斜地配置 有分光鏡415’而且於夾著該分光鏡415之第丨透鏡陣列々a 之相反側，配置有第2透鏡陣列414與第2LED陣列413。 (於圖5中，分光鏡415、第2透鏡陣列414.等係省略圖示) 藉此，分光鏡415係使來自第1LED陣列411及第i透鏡陣 列412之光穿透，同時將來自第2LED陣列413及第2透鏡 陣列414之光反射，而以使第2LED陣列413發光部413c 之影像疊合於第1LED陣列411發光部4Uc之影像進行合 成之方式配置。藉此，由第丨透鏡陣列412與第2透鏡陣列 414所合成之影像係成為將如圖6(B)所示之各led陣列 411、413之發光部之形狀放大地排列者。 再者，第1LED陣列411之光係為中心波長385 nm，第 2LED陣列413之光係為中心波長365 nm，由於兩者之差為 20 nm左右’故為了合成此等，分光鏡415必須具有較為陡 峭之稜角之分光反射率（分光穿透率）的特性。在對分光鏡 100127353 13 201211703 415之入射角為45度以上之情形時，由於會產生ps極化分 里之光4·特丨生的分離而無法獲得陡崎之特性，故於本實施形 態中，使各自之光之入射角小於40度。而且為了使2種波 長的光&成之效率提高，故各自於分光鏡41 $之反射側利用 波長較短之第2LED陣列413，於透射侧利用波長較長之第 1LED 陣列 411。 第3透鏡陣列416，係配置於由分光鏡415所合成之第 1LED陣列411之影像與第2LED陣列413之影像的合成影 像之位置’使人射光束之主光線平行於光軸而人射至下述第 1成像光學系、統417。第3透鏡陣列416係以之方式排 列1〇醜見方之平凸透鏡杨者，且各個透鏡416a成為 ”各自的舍光部4llc、413c相似之形狀(即正方形），而且 與該合成影像為大致相同之大小。 A第1成像光學系統417，係為雙側遠心之光學系統，且包 各第1透鏡417a、第2透鏡4m、及第3透鏡職，該第 41^光予系統417係將分光鏡415所形成之第1LED陣列 之入^山ED陣列413之合成影像縮小投影至桿積算器433 ㈣，就效率而言，較佳為使桿積算11 433之入射端之 4U、由第1成像光學系統417所縮小之第1LED陣列 然$，ED陣列413的發光部之影像為大致相同之形狀。 的光，積算器433之出射端所輸出之均勾之照度分布 、、係藉由包含透鏡434a、透鏡43仆、鏡4%及鏡4% 100127353 201211703 之第2成絲學系統’照射至DMD42之既定之照明區域。 知射至DMD42之光之波長頻譜，如目8所示，係將第iLE〇 陣列411之中心波長385 nm之光與第2LED陣列413之中 心波長365 nm之光進行合成者。於此’對各個LED陣列之 接通電流係根據控制部5之控制而為可變，可使2個波長之 光之強度比可變。藉此，可配合為照射對象之光阻特性，精 細地設定照射之光之特性，例如可配合抗焊劑之特性獲得所 需之圖案剖面之形狀。 <3.曝光裝置之動作與效果> 右將形成有抗丨干劑之覆膜之基板9搬入至曝光裝置1之平 台2 ’則控制部5將控制平台移動機構31或頭部4、頭部移 動機構32等以進行曝光處理。此時，光源單元41係將第The entire surface of each lens 416a of 416 is covered. Between the first lens array 412 and the image of the light-emitting portion 4Uc of each of the LED chips 411a of the first LED array 411 formed thereon, a beam splitter 415' is disposed obliquely and a second lens array sandwiching the beam splitter 415 is disposed. On the opposite side of a, the second lens array 414 and the second LED array 413 are disposed. (In FIG. 5, the beam splitter 415, the second lens array 414, etc. are omitted from the illustration). Thereby, the beam splitter 415 penetrates the light from the first LED array 411 and the i-th lens array 412, and at the same time The light of the second LED array 413 and the second lens array 414 is reflected, and the image of the light-emitting portion 413c of the second LED array 413 is superimposed on the image of the light-emitting portion 4Uc of the first LED array 411 to be combined. Thereby, the image synthesized by the second lens array 412 and the second lens array 414 is enlarged in the shape of the light-emitting portions of the respective LED arrays 411 and 413 as shown in Fig. 6(B). Furthermore, the light system of the first LED array 411 has a center wavelength of 385 nm, and the light system of the second LED array 413 has a center wavelength of 365 nm. Since the difference between the two is about 20 nm, the spectroscope 415 must have a The characteristic of the spectral reflectance (split transmittance) of steeper corners. In the case where the incident angle of the beam splitter 100127353 13 201211703 415 is 45 degrees or more, since the separation of the light of the ps polarization is generated, the characteristics of the steepness cannot be obtained, and thus in the present embodiment, , so that the incident angle of each light is less than 40 degrees. Further, in order to improve the efficiency of the light of the two kinds of wavelengths, the second LED array 413 having a shorter wavelength is used on the reflection side of the spectroscope 41 $, and the first LED array 411 having a longer wavelength is used on the transmission side. The third lens array 416 is disposed at the position of the composite image of the image of the first LED array 411 and the image of the second LED array 413 synthesized by the beam splitter 415, so that the chief ray of the human beam is incident on the optical axis parallel to the optical axis. The following first imaging optical system, system 417. The third lens array 416 is arranged in such a manner that the opaque convex convex lens yang is formed, and each lens 416a is formed into a shape similar to the respective polished portions 4llc, 413c (ie, a square), and is substantially the same as the composite image. The first imaging optical system 417 is a two-sided telecentric optical system, and includes a first lens 417a, a second lens 4m, and a third lens. The 41st light system 417 is split. The synthetic image of the first LED array formed by the mirror 415 is reduced and projected onto the rod totalizer 433 (4). In terms of efficiency, it is preferable to make the rod end of the incident end of the 11 433 4U, by the first imaging The first LED array that is reduced by the optical system 417 is $, and the image of the light-emitting portion of the ED array 413 has substantially the same shape. The light is distributed by the output end of the totalizer 433, and the illuminance distribution is obtained by including the lens. 434a, lens 43 servant, mirror 4%, and mirror 4% 100127353 201211703 The second rayon system 'illuminates the intended illumination area of DMD42. The wavelength spectrum of light that is incident on DMD42, as shown in item 8, will The i-th 〇 array 411 has a center wavelength of 385 nm Combining with the light having a center wavelength of 365 nm of the second LED array 413. Here, the on-current of each LED array is variable according to the control of the control unit 5, and the intensity ratio of the two wavelengths of light can be made Therefore, the characteristics of the irradiated light can be finely set in accordance with the photoresist characteristics of the object to be irradiated, for example, the shape of the desired pattern cross section can be obtained in accordance with the characteristics of the solder resist. 3. The action and effect of the exposure apparatus > Right, the substrate 9 on which the film of the anti-drying agent is formed is carried into the stage 2 of the exposure apparatus 1 'The control unit 5 controls the stage moving mechanism 31 or the head 4, the head moving mechanism 32, etc. for exposure processing At this time, the light source unit 41 will be the first
1LED陣列411所射出之中心波長385 nm之光與第2LED 陣列413所射出之中心波長365 nm之光進行合成所得之光 輸出而對DMD42進行照明，並利用該光對基板9之抗焊劑 進行曝光。光源單元41所射出之光，係控制對各陣列 411、413之開啟電流，成為配合欲處理之基板9之波長' 強度之光，而良好地執行曝光。於光源單元41中，可在2 個LED陣列4η、4Π中設置充分之數量 光的LED晶片411a、413a’以獲得所需之波長、光量之光。 <4.變形例> 於上述實施形態中，雖然在由分光鏡415合成第丨咖陣 100127353 15 201211703 列411之光與第2LED陣列413之光後’藉由第3透鏡障列 416成為遠心，並由第1成像光學系統417進行縮小，但若 為可容許之些許之效率低下，則可省略例如第3透鏡陣q 416。又，根據光源單元41所要求之出射光束之形狀，亦可 省略第1成像光學系統417。假設在省略此兩者之情況，可 使以分光鏡415合成之後之光直接入射至桿積算器433之輪 入端。 又，於本實施形態中，雖為了合成第1LED陣列411之光 與第2LED陣列413之光而使用分光鏡415，但亦可取代言亥 分光鏡415而使用例如立方體之二向色棱鏡。又，亦可根才康 所需之光之波長區域合成3種以上之波長之光，且於該情况 下，作為光學合成元件，亦可使用複數個分光鏡415，或者 亦可使用正交稜鏡、飛利浦型稜鏡(PHILIPS Prism)、凱斯特 (Kester)稜鏡等二向色棱鏡。 又，此處係以桿積算器433作為均勻化元件而使用。此既 可為以反射面為内側將鏡黏合成中空之光導管，亦可為利用 全反射之多角柱之實心桿。亦可為入射側剖面形狀與出射側 剖面形狀為大致相似形狀之錐形型態。而且亦可取代桿積算 器433而使用蠅眼透鏡(fly-eye lens)。此時，較佳為，使繩 眼透鏡之各個透鏡之形狀與被照射面之形狀為大致相似之 形狀，可藉由將第1成像光學系統417内部之主光線設置於 與光軸相交之位置，而實現均勻之照度分布。 100127353 16 201211703 【圖式簡單說明】 圖1係表示本發明之實施形態之曝光裝置的示意圖。 圖2係表示DMD之圖式。 圖3係表示照明光學系統之一部分之示意性的斜視圖。 圖4係光源單元之側視圖。 圖5係表示摘錄於光源單元之一部分之側視圖。 圖6(A)及(B)係表示LED晶片之外觀及其投影像之圖式。 圖7係表示摘錄於光源單元之一部分之斜視圖。 圖8係表示出射光之分光波長特性之圖式。 【主要元件符號說明】 1 曝光裝置 2 平台 4 頭部 5 控制部 9 基板 31 平台移動機構 32 頭部移動機構 41 光源單元 42 DMD 43a 照明光學系統 43b 投影光學系統 411 第1 LED陣列 100127353 17 201211703 411a LED晶片 411b 基板 411c 發光部 411d 防護玻璃 412 第1透鏡陣列 412a 第1透鏡 412b 第2透鏡 412c 框架 413 第2LED陣列 413a LED晶片 413b 基板 413c 發光部 413d 防護玻璃 414 第2透鏡陣列 414a 第1透鏡 414b 第2透鏡 414c 框架 415 分光鏡 416 第3透鏡陣列 416a 透鏡 417 第1成像光學系統 417a 第1透鏡 100127353 18 201211703 417b 第2透鏡 417c 第3透鏡 421 秒基板 422 微鏡組 433 桿積算器 434a 透鏡 434b 透鏡 435 鏡 436 鏡 437 變焦透鏡 438 鏡 439 投影透鏡 d 間距 X、Y 方向 100127353 19The light output obtained by combining the light of the center wavelength of 385 nm emitted by the LED array 411 and the light of the center wavelength of 365 nm emitted from the second LED array 413 is used to illuminate the DMD 42 and expose the solder resist of the substrate 9 by the light. . The light emitted from the light source unit 41 controls the on-current of each of the arrays 411 and 413 to match the intensity of the wavelength of the substrate 9 to be processed, and performs the exposure well. In the light source unit 41, a sufficient number of light LED chips 411a, 413a' can be disposed in the two LED arrays 4n, 4A to obtain light of a desired wavelength and amount of light. <4. Modifications> In the above embodiment, after the light of the second array 411 and the light of the second LED array 413 are synthesized by the beam splitter 415, the third lens barrier 416 becomes The telecentricity is reduced by the first imaging optical system 417. However, if the allowable efficiency is somewhat lowered, for example, the third lens array q 416 can be omitted. Further, the first imaging optical system 417 may be omitted depending on the shape of the outgoing beam required by the light source unit 41. Assuming that the two are omitted, the light synthesized by the beam splitter 415 can be directly incident on the wheel end of the rod totalizer 433. Further, in the present embodiment, the spectroscope 415 is used to synthesize the light of the first LED array 411 and the second LED array 413. Alternatively, instead of the dichroic mirror 415, a cubic dichroic prism may be used. Further, three or more wavelengths of light may be synthesized in the wavelength region of the light required for the root, and in this case, a plurality of beamsplitters 415 may be used as the optical composite elements, or orthogonal edges may be used. Mirror, Philips-type 稜鏡 (PHILIPS Prism), Kester (Kester) 稜鏡 and other dichroic prisms. Here, the rod totalizer 433 is used as a homogenizing element. This can be either a light guide that bonds the mirror to the inside with the reflective surface, or a solid rod that uses a full-reflection polygonal column. It may also be a tapered shape in which the incident side cross-sectional shape and the exit-side cross-sectional shape are substantially similar in shape. Further, a fly-eye lens may be used instead of the rod calculator 433. In this case, it is preferable that the shape of each lens of the eye lens is substantially similar to the shape of the illuminated surface, and the principal ray inside the first imaging optical system 417 can be disposed at a position intersecting the optical axis. And achieve a uniform illumination distribution. 100127353 16 201211703 [Brief Description of the Drawings] Fig. 1 is a schematic view showing an exposure apparatus according to an embodiment of the present invention. Figure 2 is a diagram showing the DMD. Fig. 3 is a schematic perspective view showing a part of an illumination optical system. Figure 4 is a side view of the light source unit. Fig. 5 is a side view showing a portion extracted from a light source unit. 6(A) and (B) are diagrams showing the appearance of an LED chip and its projection image. Fig. 7 is a perspective view showing a portion extracted from a light source unit. Fig. 8 is a view showing the spectral characteristics of the splitting light of the emitted light. [Main component symbol description] 1 Exposure device 2 Platform 4 Head 5 Control portion 9 Substrate 31 Platform moving mechanism 32 Head moving mechanism 41 Light source unit 42 DMD 43a Illumination optical system 43b Projection optical system 411 First LED array 100127353 17 201211703 411a LED wafer 411b substrate 411c light-emitting portion 411d cover glass 412 first lens array 412a first lens 412b second lens 412c frame 413 second LED array 413a LED wafer 413b substrate 413c light-emitting portion 413d cover glass 414 second lens array 414a first lens 414b Second lens 414c Frame 415 Beam splitter 416 Third lens array 416a Lens 417 First imaging optical system 417a First lens 100127353 18 201211703 417b Second lens 417c Third lens 421 Second substrate 422 Micro mirror group 433 Rod totalizer 434a Lens 434b Lens 435 mirror 436 mirror 437 zoom lens 438 mirror 439 projection lens d spacing X, Y direction 100127353 19