CN102402130A - Exposure device and light source device - Google Patents
Exposure device and light source device Download PDFInfo
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- CN102402130A CN102402130A CN2011102814547A CN201110281454A CN102402130A CN 102402130 A CN102402130 A CN 102402130A CN 2011102814547 A CN2011102814547 A CN 2011102814547A CN 201110281454 A CN201110281454 A CN 201110281454A CN 102402130 A CN102402130 A CN 102402130A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides an exposure device and a light source device, featuring less power consumption and long service lifetime and being capable of efficiently emitting the light of required wavelength area with the required light amount. The light source unit (41) comprises a first LED array (411), a first lens array (412), a second LED array (413), a second lens array (414), a color selective mirror (415), a third lens array (416), and a first imaging optical system (417), wherein the first LED array (411) emits the light having central wavelength of 385nm; the second LED array (413) emits the light having central wavelength of 365nm; and the color selective mirror (415) overlaps the image of the luminous part (413c) of the second LED array (413) upon the image of the luminous part (411c) of the first LED array.
Description
Technical field
The present invention relates to exposure device and light supply apparatus, in more detail, relate to the exposure device that is applied to used in electronic industry printed circuit board (PCB), semiconductor or LCD manufacturing and be used in the light supply apparatus of these exposure devices etc.
Background technology
For example, in the printed circuit board (PCB) of used in electronic industry or semiconductor wafer, LCD manufacturing treatment process with glass substrate etc., the general surface portrayal patterning technique that has utilized photoetching process (photolithography) that uses.In the past; For example in the manufacturing process of printed circuit board (PCB); On printed circuit board (PCB), form photosensitive material (having photosensitive resin etc.) overlay film through coating or lamination methods such as (laminate); Photomask across having formed desirable pattern makes public, thereby on the photosensitive material overlay film, forms pattern.
In recent years, also use to be called the Exposure mode of directly describing, this is called the Exposure mode of directly describing and does not use photomask, but through the use optical modulation element for example the light that is modulated into of DMD (DMD) make public and directly describe pattern.
Patent documentation 1: TOHKEMY 2003-332221 communique
Patent documentation 2: TOHKEMY 2006-133635 communique
In the exposure device of the mode of directly describing shown in the patent documentation 1, use lamp as light source, but the common employed extra-high-pressure mercury vapour lamp of this device is large-scale, there is the problem that consumed power is big, the life-span is short.Therefore, also proposed shown in patent documentation 2 suchly to use consumed power is few and the life-span is long light emitting diode (LED) as light source.
But, sometimes according to characteristic, require the light of irradiation than the wavelength region may of broad as the photosensitive material of exposure object thing, if use the narrow LED of wavelength region may of irradiates light just can not obtain desirable characteristic, cause the problem that can not portray pattern well.For example in the exposure to solder mask (solder resist); The light that needs near the wavelength region may of the ratio broad of irradiation 360～390nm; Therefore if only irradiation comes comfortable 360nm to have the light of LED of the single wavelength of peak value (peak); Then can not make public fully, the pattern section that has solder mask becomes the bad of back taper shape etc.
To this, in the light source of patent documentation 2 record, also expected using with two kinds of LED of the light that sends different wave length, if but the LED quantity of each wavelength reduce, just can not obtain the light quantity of this required abundance of making public.
Summary of the invention
The present invention is in view of the above problems and proposes, and purpose is to provide consumed power few and the life-span long and can be with the light of required wavelength region may with required the light quantity light supply apparatus and the exposure device of outgoing expeditiously.
The light supply apparatus of technical scheme one record is characterized in that having: first array of source, be arranged with a plurality of light source components, and this light source component has the illuminating part of the light of outgoing first wavelength characteristic; First lens arra is arranged with a plurality of lens, and these lens form the intensified image of illuminating part of each light source component of above-mentioned first array of source; The secondary light source array is arranged with a plurality of light source components, and this light source component has the illuminating part of the light of outgoing second wavelength characteristic; Second lens arra is arranged with a plurality of lens, and these lens form the intensified image of illuminating part of each light source component of above-mentioned secondary light source array; The optics synthin makes the picture overlaid of illuminating part of picture and the formed above-mentioned secondary light source array of above-mentioned second lens arra of the illuminating part of formed above-mentioned first array of source of above-mentioned first lens arra, thereby forms synthesized image; And uniformization element, the light beam that the light beam of the synthesized image that above-mentioned optics synthin synthesized is become have uniform illumination to distribute comes outgoing.
The light supply apparatus of technical scheme two records; On the basis of the light supply apparatus that technical scheme 1 is put down in writing; It is characterized in that also having: the 3rd lens arra makes the chief ray of light beam of synthesized image of each illuminating part of formed each light source component of above-mentioned optics synthin parallel with optical axis; First imaging optical system is the optical system of the both sides heart far away, is used for the incident end from the above-mentioned synthesized image reduced projection of above-mentioned the 3rd lens arra outgoing to above-mentioned uniformization element.
The light supply apparatus of technical scheme three records; On the basis of the light supply apparatus that technical scheme one is put down in writing; It is characterized in that; Above-mentioned first lens arra is the size of the arrangement pitches of this light source component with the illuminating part enlarging projection of each light source component of above-mentioned first array of source, and above-mentioned second lens arra is the size of the arrangement pitches of this light source component with the illuminating part enlarging projection of each light source component of above-mentioned secondary light source array.
The light supply apparatus of technical scheme four records on the basis of the light supply apparatus that technical scheme one is put down in writing, is characterized in that also having: second imaging optical system, it arrives light beam projecting of above-mentioned uniformization element outgoing the field of illumination of regulation.
The light supply apparatus of technical scheme five records on the basis of the light supply apparatus that technical scheme one is put down in writing, is characterized in that above-mentioned uniformization element is an integral optical system.
The light supply apparatus of technical scheme six records on the basis of the light supply apparatus that technical scheme one is put down in writing, is characterized in that above-mentioned optics synthin is a dichronic mirror.
The invention of technical scheme seven records is a kind of exposure devices, it is characterized in that having: each record light supply apparatus in the technical scheme one to six; Optical modulation element, it is by this light supply apparatus illumination; Projection optical system, it will be mapped on the rendered object thing through the illumination after the above-mentioned optical modulation element modulation; And scanning mechanism, it relatively moves above-mentioned projection optical system and above-mentioned rendered object thing, thus above-mentioned rendered object thing is scanned.
The invention of technical scheme eight records is a kind of exposure devices, it is characterized in that having: the light supply apparatus of technical scheme six records; Optical modulation element, it is by this light supply apparatus illumination; Projection optical system; It will be mapped on the rendered object thing that is formed with the solder mask overlay film through the illumination after the above-mentioned optical modulation element modulation; And scanning mechanism, it relatively moves above-mentioned projection optical system and above-mentioned rendered object thing, scans scanning above-mentioned rendered object thing thus; The light-emitting component of above-mentioned first array of source has illuminating part, and this illuminating part outgoing has the light of peak value near wavelength 385nm; The light-emitting component of above-mentioned secondary light source array has illuminating part, and this illuminating part outgoing has the light of peak value near wavelength 365nm; Above-mentioned dichronic mirror is configured to make the light transmission from above-mentioned first array of source, and makes the light reflection from above-mentioned secondary light source array, forms synthesized image thus.
According to the invention of technical scheme one to six record, it is few and the life-span is long to obtain consuming electric power, and the light of wavelength region may that can the outgoing needs and the light supply apparatus that makes public.
According to the invention of technical scheme two records, the light beam of the desirable shape of outgoing especially efficiently.
According to the invention of technical scheme seven record, it is few and the life-span is long to obtain consuming electric power, and the light of wavelength region may that can the outgoing needs and the exposure device that makes public.
According to the invention of technical scheme eight records, especially can obtain and outgoing to have the light of the best wavelength characteristic of the exposure of solder mask and the exposure device that makes public.
Description of drawings
Fig. 1 is the synoptic diagram of the exposure device that relates to of expression embodiment of the present invention.
Fig. 2 is the figure of expression DMD.
Fig. 3 is the schematic stereographic map of the part of expression lamp optical system.
Fig. 4 is the side view of light source cell.
Fig. 5 is the side view that the part of intercepting light source cell is represented.
Fig. 6 A, Fig. 6 B are the outward appearance of expression led chip and the figure of projection image thereof.
Fig. 7 is the stereographic map that the part of intercepting light source cell is represented.
Fig. 8 is the figure of the branch optical wavelength characteristics of expression emergent light.
Embodiment
< the 1. summary of the structure of exposure device and action >
Fig. 1 is the synoptic diagram of the structure of the exposure device 1 that relates to of an expression embodiment of the present invention.In Fig. 1, be represented by dotted lines the profile of device for the internal structure of indication device.Exposure device 1 be printed circuit board (PCB) (below; Abbreviating circuit board as) pattern of exposure regulation carries out the device that pattern forms on 9; This printed circuit board (PCB) is meant; Through applying or be laminated to the printed circuit board (PCB) that is formed with the solder mask overlay film on the printed circuit board surface, this exposure device 1 have holding circuit plate 9 objective table 2, make the objective table travel mechanism 31 that moves on the Y direction of objective table 2 in Fig. 1, to the head 4 of circuit board 9 outgoing beams, the control part 5 that makes the head moving mechanism 32 that moves on the directions X of head 4 in Fig. 1, be connected with above-mentioned objective table travel mechanism 31, head 4 and head moving mechanism 32.
The head 4 built-in optical systems that comprise light source cell 41 and DMD42; The light beam that this light source cell 41 has provision wavelengths like the said outgoing in back; This DMD42 is provided with and is arranged in cancellate tiny mirror group; Head 4 utilizes the tiny mirror group of DMD42 to reflect the light beam from light source cell 41, generates the light beam through spatial modulation thus, and circuit board 9 outgoing that kept to objective table 2 then make public and form pattern.
The summary of optical system is described.Light beam by light source cell 41 outgoing imports to catoptron 436 via integrating rod (rodintegrator) 433, lens 434a, lens 434b and catoptron 435, and catoptron 436 makes beam convergence and imports to DMD42.The light beam that incides DMD42 shines on the tiny mirror group of DMD42 with the incident angle of stipulating (for example 24 degree) equably.As stated, constituted the lamp optical system 43a that will import to DMD42 through light source cell 41, integrating rod 433, lens 434a, lens 434b, catoptron 435 and catoptron 436 from the light of light source cell 41.
Only by from each tiny mirror of DMD42 be in prescribed form (after in the explanation of passing through the DMD42 irradiates light stated; With the corresponding posture of ON (unlatching) state) the light beam (i.e. light beam after spatial modulation) that forms of the reflected light of tiny mirror incide zoom lens (zoom lens) 437, through importing to projecting lens 439 through catoptron 438 after the zoom lens 437 adjustment multiplying powers.Then, from the light beam irradiates of projecting lens 439 to the tiny mirror group zone on the circuit board 9 of conjugation optically.Like this, in exposure device 1, constituted the regional projection optical system 43b of rayed that will import to the correspondence on the circuit board 9 from the light of each tiny mirror through zoom lens 437, catoptron 438, projecting lens 439.
Objective table 2 is fixed on moving body one side as the objective table travel mechanism 31 of linear motor; Control part 5 control objective table travel mechanisms 31, the rayed zone group (establishing a tiny mirror corresponding to a rayed zone) of the illuminated thus light from tiny mirror group Y direction in Fig. 1 on dry-film resist relatively moves.That is, rayed zone group is with respect to head 4 relative fixed, and by moving of circuit board 9, rayed zone group moves on circuit board 9.
Head 4 is fixed on moving body one side of head moving mechanism 32, on the sub scanning direction (directions X) vertical with the main scanning direction (the Y direction among Fig. 1) of rayed zone group, intermittently moves.That is, whenever the main sweep end, head moving mechanism 32 moves head 4 starting position to next main sweep on directions X.And through the driving of this objective table travel mechanism 31 and head moving mechanism 32, also make public in the surface of head 4 sweep circuit plates 9.
Fig. 2 is the figure of expression DMD42.DMD42 is the spatial light modulation device with tiny mirror group 422; This tiny mirror group 422 forms (following describe with the tiny mirror group that on mutually perpendicular two directions, is arranged in the capable N of M row) with a plurality of tiny mirror equally spaced being arranged in clathrate on the silicon substrate 421; According to be written to the corresponding storage unit of each tiny mirror in data, tilt by the electrostatic field angle of regulation of each tiny mirror.
If reset pulse (reset pulse) is imported into the DMD42 from control part as shown in Figure 15, then each tiny mirror is according to the data that are written in the corresponding storage unit, is axle with the diagonal line of reflecting surface, tilts simultaneously with the posture of regulation.Thus, the light beam that shines on the DMD42 is reflected according to the vergence direction of each tiny mirror, carries out the light-struck unlatching (ON)/close (OFF) to the rayed zone.That is, receive reset pulse if in storage unit, be written into the tiny mirror of the data of expression unlatching, the light that then incides this tiny mirror is to zoom lens 437 reflections, and illumination is mapped to corresponding rayed zone.In addition, if tiny mirror is the OFF state, then the tiny mirror light that will go into to shine is to the assigned positions reflection different with zoom lens 437, and corresponding rayed zone is not for being imported into the state of light.
And according to such structure, the surface of circuit board 9 is scanned by head 4 relatively, and illuminated by the light beam after the DMD42 modulation, thereby on the solder mask on circuit board 9 surfaces, forms the pattern of regulation.
< the 2. detailed structure of optical system >
Next the detailed structure of optical system is described.Fig. 3 is the schematic stereographic map of a part that expression comprises the lamp optical system 43a of light source cell 41; Fig. 4 is the side view of light source cell 41; Fig. 5 is the side view that the part of intercepting light source cell 41 is represented; Fig. 6 A, Fig. 6 B are outward appearance and the figure of projection image thereof of expression led chip, and Fig. 7 is the stereographic map of expression first led array 411, first lens arra 412 and the 3rd lens arra 416.
First led array 411 constitutes through on circuit board 411b, arranging 12 led chips (LED diode) 411a, and this led chip 411a has the illuminating part of the light of outgoing centre wavelength 385nm (first wavelength characteristic).The size of led chip 411a is that 1mm is square, is accommodated in the inside of ceramic package (in diagram, omitting).Led chip 411a is not that the square whole surface of 1mm is all luminous, owing to there is non-luminous part in the reasons such as influence of the shadow of electrode.Shown in Fig. 6 A, the led chip 411a of this embodiment is formed with the illuminating part 411c that the mark shade is represented among the figure in the square scope of the 0.8mm in the surface.For first led array 411,, the ceramic package of each led chip 411a is installed on the circuit board 411b so that this led chip 411a is arranged as the mode that 3 row * 4 are listed as by 10mm interval (d=10mm in the middle of Fig. 5) in length and breadth two-dimentionally.In addition, at the front surface of each led chip 411a, be provided with the cover glass 411d that is used to protect the surface.
Second led array 413 constitutes through on circuit board 413b, arranging 12 led chip 413a, and this led chip 413a has the illuminating part of the light of outgoing centre wavelength 365nm (second wavelength characteristic).The structure of this second led array 413 and led chip 413a is except the outgoing light wavelength of led chip 413a; Identical with first led array 411 shown in Figure 5, led chip 411a; So that led chip 413a is arranged in the mode that 3 row * 4 are listed as by the 10mm spacing in length and breadth two-dimentionally, the ceramic package of each led chip 413a is installed on the circuit board 413b.In addition, at the front surface of each led chip 413a, be provided with the cover glass 413d that is used to protect the surface.
The structure of second lens arra 414 is identical with the first above-mentioned lens arra 412; Following formation; That is, with the arrangement of lens combination and led chip 413a accordingly and be identical 12 i.e. 3 row * 4 row of arranging, this lens combination forms the picture of illuminating part 413c of each led chip 413a of second led array 413 in length and breadth two-dimentionally; From led chip 413a unilateral observation; For each led chip 413a, dispose by the first lens 414a of biconvex and these two lens combination that lens constitute of the second lens 414b of plano-convex, and they are assembled among the frame 414c.The lens combination of these the first lens 414a and the second lens 414b and first lens arra 412 shown in Figure 5 are likewise; With the square roughly foursquare zone of 0.8mm at the place of the illuminating part 413c among the led chip 413a, it is the square size of 10mm that enlarging projection becomes the size of the arrangement pitches of led chip 413a.And the picture of the illuminating part 413c after the projection just in time covers the whole surface of each lens 416a of the 3rd lens arra of stating after the formation 416.
Between the picture of the illuminating part 411c of each led chip 411a of first lens arra 412 and this first lens arra 412 formed first led array 411; Be obliquely installed dichronic mirror 415; And then, be provided with second lens arra 414 and second led array 413 (in Fig. 5, having omitted the diagram of dichronic mirror 415, second lens arra 414 etc.) across the opposite side of this dichronic mirror 415 at first lens arra 412.Thus; Dichronic mirror 415 is set to; Make light transmission from first led array 411 and first lens arra 412; And make from the reflection of the light of second led array 413 and second lens arra 414, synthesize with the picture of the illuminating part 413c of overlapping second led array 413 on the picture of the illuminating part 411c of first led array 411.Thus, the picture of arranging after the synthetic shape amplification as become shown in Fig. 6 B that produces by first lens arra 412 and second lens arra 414 with the illuminating part of each led array 411,413.
In addition; The centre wavelength of the light of first led array 411 is 385nm; The centre wavelength of the light of second led array 413 is 365nm; Because both differences are about 20nm, so for they are synthetic, dichronic mirror 415 need have spectral reflectance (spectrophotometric transmittance) characteristic at the edge of steeper.Because in the incident angle to dichronic mirror 415 incidents is the separation of the 45 degree optical characteristics that can produce the PS polarized light component when above and can not obtain precipitous characteristic, so in this embodiment, the incident angle that makes each light is all less than 40 degree.In addition, for the synthetic efficient of the light that makes two wavelength uprises, second led array 413 that wavelength is short is configured in the reflection side of dichronic mirror 415, and long first led array 411 of ripple is configured in through side, comes to utilize respectively.
The 3rd lens arra 416 is arranged on the position by the synthesized image of the picture of the picture of the first synthetic led array 411 of dichronic mirror 415 and second led array 413, make the chief ray of light beam of incident parallel with optical axis and incide after in first imaging optical system 417 stated.The 3rd lens arra 416 makes the square plano-convex lens 416a of 10mm be arranged as 3 row * 4 row, and each lens arra 416a is and each illuminating part 411c, 413c shapes similar (i.e. square), and big or small and its synthesized image is roughly the same.
First imaging optical system 417 is optical systems of the both sides heart far away; Comprise the first lens 417a, the second lens 417b and the 3rd lens 417c, the synthesized image reduced projection of dichronic mirror 415 formed first led array 411 and second led array 413 is arrived the incident end of integrating rod 433.Consider from the efficient aspect, preferably make integrating rod 433 the incident end shape with dwindle by first imaging optical system 417 after first led array 411, second led array 413 illuminating part picture for roughly just as shape.
And the light by the uniform Illumination Distribution of the exit end of integrating rod 433 output through second imaging optical system that is made up of lens 434a, lens 434b, catoptron 435 and catoptron 436, shines the field of illumination of the regulation of DMD42.That kind as shown in Figure 8, the light wavelength spectrum that shines DMD42 becomes by the spectrum after the light compositing of the centre wavelength 365nm of the light of the centre wavelength 385nm of first led array 411 and second led array 413.At this, variable to the turn-on current that each led array provides through the control of control part 5, thus can make the light intensity ratio of two wavelength variable.Thus, can get carefully, for example can obtain the shape of desirable pattern section according to the characteristic of solder mask according to the property settings of the light that will shine as the characteristic of the film of irradiation object.
< the 3. action of exposure device and effect >
Moved on the objective table 2 of exposure device 1 if be formed with the circuit board 9 of solder mask overlay film, then control part 5 control objective table travel mechanism 31, head 4, head moving mechanism 32 wait and carry out exposure-processed.At this moment, light source cell 41 is exported the light after the light compositing of the centre wavelength 365nm of the light of the centre wavelength 385nm of first led array, 411 outgoing and 413 outgoing of second led array, DMD42 is thrown light on, and make the solder mask exposure of circuit board 9 through this light.Through the turn-on current that control provides each led array 411,413, the light of light source cell 41 outgoing becomes the wavelength and the light of intensity that adapts with the circuit board 9 that will handle, makes public thereby carry out well.Led chip 411a, the 413a of the light of the required wavelength of the outgoing of sufficient amount can be set in two led array 411,413, thereby in light source cell 41, can access the required wavelength and the light of light quantity.
4. variation
In the above-described embodiment; After the light of the light of first led array 411 and second led array 413 is synthesized by dichronic mirror 415; Become the heart far away by the 3rd lens arra 416, and dwindle, still by first imaging optical system 417; Reduce if can allow efficient, then for example can omit the 3rd lens arra 416.In addition, according to the shape of the outgoing beam that light source cell 411 is required, also can omit first imaging optical system 417.Suppose to omit these both the time, make light after dichronic mirror 415 is synthetic be directly incident on the input end of integrating rod 433.
In addition; In this embodiment; Use dichronic mirror 415 for the light of the light of synthetic first led array 411 and second led array 413, the colour splitting prism (dichroic prism) of cubes (cube tepe) replaces dichronic mirror 415 but for example also can utilize.In addition; Light wavelength zone as required; The light that also can synthesize wavelength more than three kinds, at this moment, as the optics synthin; Also can use a plurality of dichronic mirrors 415, perhaps also can use cross prisms (cross prism), Philips's formula prism (Phillips type prism), Koster prism colour splitting prisms such as (Koester prism).
In addition, at this, use integrating rod 433 as uniformization element.The reflecting surface that also can use catoptron places the inboard and the photoconductive tube (light pipe) of the hollow of pasting, and also can use the solid bar of the prism that utilizes total reflection.Also can be that light incident side section shape and exiting side section shape are the roughly taper of similar shape.In addition, also can use fly's-eye lens (fly eye lens) to replace integrating rod 433.In this case, preferably make fly's-eye lens each lens shape and plane of illumination be shaped as roughly similar shape, through being arranged on the inner chief ray of first imaging optical system 417 and the position of optical axis intersection, can realize uniform Illumination Distribution.
Claims (8)
1. light supply apparatus is characterized in that having:
First array of source is arranged with a plurality of light source components, and this light source component has the illuminating part of the light of outgoing first wavelength characteristic;
First lens arra is arranged with a plurality of lens, and these lens form the intensified image of illuminating part of each light source component of above-mentioned first array of source;
The secondary light source array is arranged with a plurality of light source components, and this light source component has the illuminating part of the light of outgoing second wavelength characteristic;
Second lens arra is arranged with a plurality of lens, and these lens form the intensified image of illuminating part of each light source component of above-mentioned secondary light source array;
The optics synthin makes the picture overlaid of illuminating part of picture and the formed above-mentioned secondary light source array of above-mentioned second lens arra of the illuminating part of formed above-mentioned first array of source of above-mentioned first lens arra, thereby forms synthesized image; And
Uniformization element, the light beam that the light beam of the synthesized image that above-mentioned optics synthin synthesized is become have uniform illumination to distribute comes outgoing.
2. according to the light supply apparatus of claim 1 record, it is characterized in that also having:
The 3rd lens arra makes the chief ray of light beam of synthesized image of each illuminating part of formed each light source component of above-mentioned optics synthin parallel with optical axis;
First imaging optical system is the optical system of the both sides heart far away, is used for the incident end from the above-mentioned synthesized image reduced projection of above-mentioned the 3rd lens arra outgoing to above-mentioned uniformization element.
3. according to the light supply apparatus of claim 1 record, it is characterized in that,
Above-mentioned first lens arra is the size of the arrangement pitches of this light source component with the illuminating part enlarging projection of each light source component of above-mentioned first array of source,
Above-mentioned second lens arra is the size of the arrangement pitches of this light source component with the illuminating part enlarging projection of each light source component of above-mentioned secondary light source array.
4. according to the light supply apparatus of claim 1 record, it is characterized in that also having second imaging optical system, this second imaging optical system arrives the light beam projecting of above-mentioned uniformization element outgoing the field of illumination of regulation.
5. according to the light supply apparatus of claim 1 record, it is characterized in that above-mentioned uniformization element is an integral optical system.
6. according to the light supply apparatus of claim 1 record, it is characterized in that above-mentioned optics synthin is a dichronic mirror.
7. exposure device is characterized in that having:
The light supply apparatus of each record in the claim 1 to 6,
Optical modulation element, it is thrown light on by this light supply apparatus,
Projection optical system, it will be mapped on the rendered object thing through the illumination after the above-mentioned optical modulation element modulation, and
Scanning mechanism, it relatively moves above-mentioned projection optical system and above-mentioned rendered object thing, thus above-mentioned rendered object thing is scanned.
8. exposure device is characterized in that having:
The light supply apparatus of claim 6 record,
Optical modulation element, it is thrown light on by this light supply apparatus,
Projection optical system, it will be mapped on the rendered object thing that is formed with the solder mask overlay film through the illumination after the above-mentioned optical modulation element modulation, and
Scanning mechanism, it relatively moves above-mentioned projection optical system and above-mentioned rendered object thing, thus above-mentioned rendered object thing is scanned;
The light-emitting component of above-mentioned first array of source has illuminating part, and this illuminating part outgoing has the light of peak value near wavelength 385nm;
The light-emitting component of above-mentioned secondary light source array has illuminating part, and this illuminating part outgoing has the light of peak value near wavelength 365nm;
Above-mentioned dichronic mirror is configured to, and makes the light transmission from above-mentioned first array of source, and makes the light reflection from above-mentioned secondary light source array, forms synthesized image thus.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010205242A JP5687013B2 (en) | 2010-09-14 | 2010-09-14 | Exposure apparatus and light source apparatus |
| JP2010-205242 | 2010-09-14 |
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| CN102402130A true CN102402130A (en) | 2012-04-04 |
| CN102402130B CN102402130B (en) | 2014-05-28 |
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| JP (1) | JP5687013B2 (en) |
| KR (1) | KR101313514B1 (en) |
| CN (1) | CN102402130B (en) |
| TW (1) | TWI448833B (en) |
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Also Published As
| Publication number | Publication date |
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| CN102402130B (en) | 2014-05-28 |
| KR101313514B1 (en) | 2013-10-01 |
| KR20120028803A (en) | 2012-03-23 |
| TW201211703A (en) | 2012-03-16 |
| JP2012063390A (en) | 2012-03-29 |
| JP5687013B2 (en) | 2015-03-18 |
| TWI448833B (en) | 2014-08-11 |
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