201145639 六、發明說明： 【發明所屬之技術領域】 本發明有關一種薄膜沉積裝置，尤其有關一種沉積薄膜 於基板上的薄膜沉積裝置及一種含此裝置的薄臈沉積系統。 【先前技術】 一有機發光二極體(OLED)為自發光元件，不需要使用背 光因而在功率上比LCD更有效率。此外，由於〇leD具 角及高回應速度’使用0LED形成的顯示器可以顯示 回。。質影像，既沒有視角上的問題，也沒有後像上的問題。 此類OLED藉由在玻璃基板上堆疊複數個薄膜(例如， 有機薄膜或金屬薄膜)來製造。往常，為了沉積複數個薄膜， 主要使用叢集方法’其中在圍繞圓形輸送腔室配置且連接至 該輸送腔室的複數個單元腔室中，執行一系列單元程序。在 此叢集方法中，玻璃基板以水平位置輸送於腔室之間，缺後 再接受元件處理。叢集方法可連續且快速地執行一系列程 序，因而也报有利，因為叢集方法可以輕易更換製造〇led 的必需用到的沉積遮罩。 、、立近來，所謂「三色獨立像素方案」為主的OLED已引起 ，思《亥方案在大尺寸基板上，使用精細金屬遮罩 ^繼形成藍色⑻、綠色⑹及紅色⑻發光層。此三色獨立像 “方案達成優異的色彩純度及光學效率，且還符合成本效 益。 然而由於二色獨立像素方案必須在獨立程序腔室中相 201145639 發光層’其中執行單元程 =直Γ二，需,將習用的叢集方法轉換成直_^ i產線缺點是’由妓置鴨重4而增加建立 、’的成本，及由於處理速度慢而降低生產率。 膜沉水倒板上執行薄 夕田二:儿積）’絲偏斜，製造元件時造成許 =難。遇有，大尺寸基板的沉積遮罩由於其沈重 =;問：基板偏斜更加明顯，因而也造成諸如基板 【發明内容】 技術問題 、因此，以下說明有關—種薄膜沉積裝置，可 理稷數個基板並將基板及料之沉積/配置的前置時間降到 ;=1生產率;以及有關一種包括此薄膜沉積裝置的 還有，以下說明有關一種薄膜沉積裝置，可藉由分享在 二或多個程序步财制使用的設備，節省建立生產線的成 本；以及有關-種包括此賴沉積裝置_膜沉積系統。 還有，以卜說明有關一種薄膜沉積裝置，可藉由在使基 板垂直站立後執行_沉積，防止基板落下；以及有關一種 包括此薄膜沉積裝置的薄膜沉積系統。 201145639 技術解決方案 根據一一般方面，提供一種薄膜沉積裝置，包括：—* 至，其中形成一反應空間；第一及第二基板夾，用於容^ 板於其中且彼此隔開；一沉積源，配置於該等第一及第-二 板夾之間，以供應一沉積材料至該等基板；及一固定單—土 在該等基板分別容鮮第-及第二基从巾時， 第一及第二基板夾固定於該腔室中的一指定位 z 定時間。 I符π—預 根據另 般方面，提供一種薄膜沉積系統，句扭. 數個單元；及第-及第二程序線，分別安裝在該複 ' 中；其中該複數個單元的至少一個包括：一第一義 70 線:一第:基板夾’形成該第二程:線且與Ξ 土板炎隔開，及一沉積源，配置於該等第一及一 夹之間，以供應一沉積材料至該等基板。 土板 有利功效 因此’根據本發明’由於在各料腔室情供的複數個 程序線上’透過程序腔室中钱的沉積源 2201145639 VI. Description of the Invention: The present invention relates to a thin film deposition apparatus, and more particularly to a thin film deposition apparatus for depositing a thin film on a substrate and a thin tantalum deposition system including the same. [Prior Art] An organic light emitting diode (OLED) is a self-luminous element, which does not require the use of backlight and is therefore more efficient in power than LCD. In addition, due to the 〇leD angle and high response speed, the display formed using 0LED can be displayed back. . The quality image has neither the problem of viewing angle nor the problem of post-image. Such OLEDs are fabricated by stacking a plurality of films (eg, organic films or metal films) on a glass substrate. Conventionally, in order to deposit a plurality of films, a clustering method is mainly used, in which a series of unit processes are performed in a plurality of unit chambers disposed around a circular transport chamber and connected to the transport chamber. In this clustering method, the glass substrate is transported between the chambers in a horizontal position, and is subjected to component processing after being absent. The clustering method can perform a series of programs continuously and quickly, and thus is also advantageous because the clustering method can easily replace the deposition mask necessary for manufacturing the 〇led. Recently, the so-called "three-color independent pixel scheme"-based OLED has been caused, and the "Hui scheme" uses a fine metal mask on a large-sized substrate to form a blue (8), green (6), and red (8) light-emitting layer. This three-color independent image "achieves excellent color purity and optical efficiency, and is also cost-effective. However, since the two-color independent pixel scheme must be in the independent program chamber phase 201145639 light-emitting layer' where the execution unit = straight, Need to, the conventional clustering method is converted into a straight line. The disadvantage is that the cost is increased by setting the duck weight 4, and the productivity is reduced due to the slow processing speed. Two: Children's product) 'The wire is skewed, causing difficulty when manufacturing components. In case of occurrence, the deposition mask of the large-size substrate is heavy due to it; Q: The substrate deflection is more obvious, thus causing such as substrate [invention content] Technical Problem, therefore, the following description relates to a thin film deposition apparatus which can process a plurality of substrates and reduce the deposition time of the substrate and the material to be deposited; 1 = productivity; and related to a film deposition apparatus including Yes, the following description relates to a thin film deposition apparatus that can save the cost of establishing a production line by sharing equipment used in two or more procedural steps; The present invention relates to a thin film deposition apparatus which can prevent the substrate from falling by performing deposition on the substrate after standing vertically; and a thin film deposition system including the thin film deposition apparatus 201145639 Technical Solution According to a general aspect, a thin film deposition apparatus is provided, comprising: -* to, wherein a reaction space is formed; first and second substrate holders for receiving and separating the plates therein; a source disposed between the first and second plate clamps to supply a deposition material to the substrates; and a fixed single-soil when the substrates respectively accommodate the first and second bases from the towel The first and second substrate holders are fixed to a specified position in the chamber for a predetermined time. I-symbol π-pre-fabrication according to another aspect, providing a thin film deposition system, a sentence twisting unit, and a second and a second Program lines, respectively installed in the complex; wherein at least one of the plurality of cells comprises: a first sense 70 line: a: substrate clip 'forming the second pass: line and separated from the smear And a deposition source Between the first and a clips to supply a deposition material to the substrates. The soil board is advantageous in terms of 'through the program chamber' through a plurality of program lines provided in the respective chambers. Sedimentary source of money in the room 2
積’可同時減少成本及提高生產率。 T/#M/yL 還有，由於將各程序腔室中輸送的第—及 ，程序腔室中的蚊位置，可提高配置基板/遮罩的ΐ靠 性0 一基板上執行薄膜沉積 還有，由於在另一程序線上的另 201145639 的同時，在一程序線上執行基板輸送及基板配置/遮罩相對 於基板的配置，可減少前置時間，進而提高生產率。 此外，由於以水平位置輸送基板以防止基板損壞，及在 處於垂直站立狀態的基板上執行薄膜沉積，因而減少基板落 下，促進元件的製造。 > 【實施方式】 下文參考附圖詳細說明本發明，其中顯示本發明之示範 性具體實施例。不過，本發明可以用許多不同的形式實施而 不限於本文所述的示範性具體實施例。事實上，提供這些示 範性具體實施例，使得本揭示内容完整詳盡，並將本發明範 疇完全傳達給熟習本技術者。圖式中，為了清楚之故，可能 誇大層及區域的尺寸及相對尺寸。圖式中，以相同參考符號 代表相同元件。 圖1為圖解根據一具體實施例之薄膜沉積系統的平面 圖，及圖2為圖解圖1薄膜沉積系統中所含薄膜沉積裝置的 平面圖。 參考圖1及2，溥膜沉積系統係基於直列式架構，其中 複數個單元200及600在作為前段的載入單元丨丨〇及作^後 段的卸載單元120之間配置成一列。此處，單元2〇〇及6〇〇 的每一個包括兩個程序線PLi▲及PL2 (以下稱為第一及第二 程序線）。單元程序可在第一及第二程序線1>]^1及pL2上連 縯執行，其執行方式使得在第一程序線PL1上執 時，在第二程序線PL2上完成單元程序的準備。 201145639 G，及= 〇用以在大氣壓下接I故進行預處理的基板 G及將基板G放入在真空狀態中 ;=序單元-接收經過-系列單元 ==:i〇 取^進行麟理。據此，載入單元 此外，1在大氣及真空條件之間進行轉換。 此卜載入早70 110及卸載單元12〇可分 2ST:械手臂)及基板載入構件(諸如基板E):這:個 構件未在圖中顯不。 單元2〇0及_包括執行單元程序的複數個程序單元 ::210、、220、230、240、⑽、260)及插入在程序單元 之間的複數個吸震$(6〇0 :㈣、62〇)。吸震器6〇〇提供 基板G在進入下一個程序之前暫時停留的臨時空間。還有， ，個程序單元2GG的-端連接至將第—沉積遮罩M1供應至 第二程序線PL1上的第一遮罩容納單元31〇。還有，每個程 序單元2GG的另-端連接至將第二沉積遮罩M2供應至第二 私序線PL2上的第一遮罩容納單元mo。第一遮罩容納單元 310及第二遮罩容納單元32〇分別儲存在薄膜沉積時使用的 沉積遮罩Ml及M2 ’或儲存取代沉積遮罩M1及M2的額 1沉積遮罩。然而，第一遮罩容納單元31〇及第二遮罩容納 單元320可以是每個程序單元2〇〇所連接的單一共用遮罩容 納單元。此外，供應材料至沉積源54〇的進料器可連接至部 分單元200及600。 ° 單元200用於在基板G上執行一系列元件程序。例如， 本具體實施例用於在事先形成正電洞的基板G上，相繼堆 疊電洞注入層（HIL)、電洞傳輸層（HTL)、發射材料層 (EML)、電子傳輸層(ETL)、電子注入層(EIL)、及負電極， 201145639 以此方式形成有機發光二極體(oled)。為此，hil形成單 、HTL形成單元220、EML形成單元230、ETL形成 單兀240、EIL形成單λ 25〇及負電極形成單元26〇連接成 歹J EML形成單元230可另外包括顯示自然色彩的藍色 -EML^形成單元23卜綠色_EML形成單元232及、紅色_EML 形成單兀233，及負電極形成單元26〇可另外包括以多層結 構形成負電極的複數個負電極形成單元261、262及263。 薄膜沉積系統中所含具有上述結構之複數個元件的至 少一個可以是薄膜沉積裝置200,以下將參考圖2詳細說明 薄膜沉積裝置200的結構。 圖2為圖解圖1薄膜沉積系統中所含薄膜沉積裝置2⑻ 的平面圖。 參考圖2，薄膜沉積裝置2〇〇包括腔室1〇〇、第一基板 夾520及第二基板夹530、沉積源540、及固定單元1〇 (見 圖3)。 腔室100可具有六面體形狀。腔室1〇〇在其中包括處理 基板G1及G2的反應空間。腔室1〇〇包括第一基板入口 511a、第一基板夾520及第一基板出口 512a，其等沿著第一 程序線對準。還有，腔室1〇〇包括第二基板入口 5Ub、第 二基板夾530及第二基板出口 512b，其等亦沿著第二程序 線對準。第一基板入口 511a及第二基板入口 511b形成於腔 室100之壁中且彼此隔開。第一基板出口 512a及第二基板 出口 512b形成於腔室1〇〇之另一壁(在其中形成第一基二入 口 51 la及第二基板入口 51 lb的腔室壁對面）中，及第一其 201145639 板出口 512a及第二基板出口 512b亦彼此隔開。第一基板入 口 511a及第二基板入口 511b，及第一基板出口 512a及第二 基板出口 512b可為狹縫閥。 第一基板夾520及第二基板夾53〇分別包括支撐基板 G1或G2之後側的支撐板521、附著於支撐板521以固定基 板G1或G2的夾器522、及使支撐板521垂直站立或水平放 置的驅動單元(未顯示）。不同於本具體實施例，如果基板G1 及G2以其垂直站立狀態放入個別程序單元21〇、22〇、230、 240、250及260，則不需要驅動單元。 溫度控制單元523可提供於支撐板521内部或下方，使 裴在支撐板521上的基板G1或G2維持在適合處理的溫度。 溫度控制單元523可以是冷卻基板G1或G2的冷卻單元、 加熱基板G1或G2的加熱單元、或其組合。本具體實施例 藉由使用冷卻單元，使基板G1及G2維持在程序溫度，提 高在基板G1及G2與沉積於基板G1及G2上表面的沉積材 料之間的反應性。 夾益522夾住基板G1及G2的邊緣，在水平裝在支撐 板521上的基板G1及G2垂直站立時，防止基板G1及G2 移動。在本具體實施例中，分別具有預定沉積圖案的沉積遮 罩Ml及M2分別形成於基板G1及G2上，以在基板G1及 G2上升>成薄膜圖案。因此，炎器522可用於將所有基板gi 及G2以及沉積遮罩mi及M2牢牢固定在支撐板521上。 第一基板夾520及第二基板夾530用於分別容納基板 G1及G2於其中。還有，第一基板夾520及第二基板夾53〇 201145639 在，同垂直面上彼此隔開預定距離，致使當第一基板夾52〇 及第二基板夾530中任一個旋轉至其水平或垂直位置時，苴 不會接觸也不會影響另一個基板。 f積源540配置在第一基板夾520及第二基板夾530之 ，。詳細地說，沉積源54〇定位面對旋轉至垂直位置以進行 /儿巧私序之基板G1及G2中的一個’及沉積源54〇用以供 f蒸發材料朝向基板G1或G2的面對表面(也就是說，沉積 。。面）。獅540具有儲存材料的腔室、蒸發材料的加熱 早兀、及分配蒸發材料的分配器，其等未在圖中顯示。沉積 源540可以疋點型、線型或平面型。在本具體實施例中，沉 積源540屬於點型，其中複數個點型沉積源541及配置 成一列。點型沉積源54〇藉由使驅動單元往返運動，在左右 =向中移動及返回’以將材料均勻分配到基板⑺或的 c面上。分配材料至基板⑺或〇2上的程序在基板⑺或 =2垂直站立時執行。為維持基板及〇2在垂直位置中， 第-基板夾520及第二基板夾53〇支撐基板⑴及G2成為 明確地說’沉積源540用於對著第一基板夾52〇旋轉並 8()° ’以分配材料至第二基板夾53G，或以相^ 轉達18(Τ，以分配材料至第一基板夾52〇。據此，可 十對女裝在單-裝置中的兩條程序線，使用單—沉積源54〇。 膜 ”現在’下文將參考圖1，大致說明由具有上述結構之 沉積糸統所執行的薄膜沉積程序。The product can reduce costs and increase productivity at the same time. T/#M/yL Also, the position of the mosquito in the program chamber can be improved by the position of the mosquitoes in the program chamber, and the reliability of the substrate/mask can be improved. Since the substrate transfer and the substrate arrangement/mask arrangement with respect to the substrate are performed on one program line at the same time as another 201145639 on the other program line, the lead time can be reduced, thereby improving productivity. Further, since the substrate is transported in a horizontal position to prevent damage of the substrate, and film deposition is performed on the substrate in a vertically standing state, the substrate is reduced in dropping, and the manufacture of the element is promoted. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention will be described in detail below with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, the invention may be embodied in many different forms and not limited to the exemplary embodiments described herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough In the drawings, the dimensions and relative sizes of layers and regions may be exaggerated for clarity. In the drawings, the same reference numerals are used to refer to the same elements. 1 is a plan view illustrating a thin film deposition system according to an embodiment, and FIG. 2 is a plan view illustrating a thin film deposition apparatus included in the thin film deposition system of FIG. 1. Referring to Figures 1 and 2, the ruthenium deposition system is based on an in-line architecture in which a plurality of cells 200 and 600 are arranged in a row between a loading unit 前 as a front stage and an unloading unit 120 as a rear stage. Here, each of the units 2A and 6B includes two program lines PLi? and PL2 (hereinafter referred to as first and second program lines). The unit program can be continuously executed on the first and second program lines 1 >]^1 and pL2 in such a manner that the preparation of the unit program is completed on the second program line PL2 when executed on the first program line PL1. 201145639 G, and = 基板 used to pre-process the substrate G under atmospheric pressure and put the substrate G in a vacuum state; = sequence unit - receive through - series unit ==: i ^ ^ ^ . According to this, the loading unit is further divided by 1 between atmospheric and vacuum conditions. This is loaded as early as 70 110 and the unloading unit 12 can be divided into 2ST: arm (and arm) and substrate loading member (such as substrate E): this: the components are not shown in the figure. Units 2〇0 and _ include a plurality of program units of the execution unit program:: 210, 220, 230, 240, (10), 260) and a plurality of shock absorbers inserted between program units (6〇0: (four), 62 〇). The shock absorber 6〇〇 provides a temporary space in which the substrate G temporarily stays before entering the next program. Also, the - terminal of the program unit 2GG is connected to the first mask housing unit 31A that supplies the first deposition mask M1 to the second program line PL1. Also, the other end of each of the program units 2GG is connected to the first mask housing unit mo that supplies the second deposition mask M2 to the second private sequence line PL2. The first mask accommodating unit 310 and the second mask accommodating unit 32 储存 respectively store the deposition masks M1 and M2' used for film deposition or the deposit 1 deposition masks which replace the deposition masks M1 and M2. However, the first mask housing unit 31 and the second mask housing unit 320 may be a single shared mask housing unit to which each program unit 2 is connected. Further, a feeder that supplies material to the deposition source 54A can be connected to the partial units 200 and 600. The unit 200 is used to execute a series of component programs on the substrate G. For example, the present embodiment is for sequentially stacking a hole injection layer (HIL), a hole transport layer (HTL), an emission material layer (EML), and an electron transport layer (ETL) on a substrate G on which a positive hole is formed in advance. , Electron Injection Layer (EIL), and Negative Electrode, 201145639 Form an organic light emitting diode (OLED) in this manner. To this end, hil forms a single, HTL forming unit 220, EML forming unit 230, ETL forming unit 240, EIL forming single λ 25 〇, and negative electrode forming unit 26 〇 connected to J EML forming unit 230 may additionally include displaying natural colors The blue-EML^ forming unit 23, the green_EML forming unit 232, and the red_EML forming unit 233, and the negative electrode forming unit 26〇 may further include a plurality of negative electrode forming units 261 that form the negative electrode in a multilayer structure. , 262 and 263. At least one of the plurality of elements having the above structure contained in the thin film deposition system may be the thin film deposition apparatus 200, and the structure of the thin film deposition apparatus 200 will be described in detail below with reference to Fig. 2. Figure 2 is a plan view showing the thin film deposition apparatus 2 (8) contained in the thin film deposition system of Figure 1. Referring to Fig. 2, the thin film deposition apparatus 2 includes a chamber 1A, a first substrate holder 520 and a second substrate holder 530, a deposition source 540, and a fixing unit 1 (see Fig. 3). The chamber 100 may have a hexahedral shape. The chamber 1 includes a reaction space in which the substrates G1 and G2 are processed. The chamber 1A includes a first substrate inlet 511a, a first substrate holder 520, and a first substrate outlet 512a that are aligned along a first program line. Also, the chamber 1A includes a second substrate inlet 5Ub, a second substrate holder 530, and a second substrate outlet 512b, which are also aligned along the second program line. The first substrate inlet 511a and the second substrate inlet 511b are formed in the walls of the chamber 100 and spaced apart from each other. The first substrate outlet 512a and the second substrate outlet 512b are formed in the other wall of the chamber 1 (opposite the chamber wall in which the first base inlet 51 la and the second substrate inlet 51 lb are formed), and One of its 201145639 board outlets 512a and the second substrate outlet 512b are also spaced apart from one another. The first substrate inlet 511a and the second substrate inlet 511b, and the first substrate outlet 512a and the second substrate outlet 512b may be slit valves. The first substrate holder 520 and the second substrate holder 53 〇 respectively include a support plate 521 on the rear side of the support substrate G1 or G2 , a clip 522 attached to the support plate 521 to fix the substrate G1 or G2 , and the support plate 521 standing vertically or Drive unit placed horizontally (not shown). Unlike the present embodiment, if the substrates G1 and G2 are placed in the vertical standing state into the individual program units 21A, 22A, 230, 240, 250, and 260, the driving unit is not required. The temperature control unit 523 can be provided inside or below the support plate 521 to maintain the substrate G1 or G2 on the support plate 521 at a temperature suitable for processing. The temperature control unit 523 may be a cooling unit that cools the substrate G1 or G2, a heating unit that heats the substrate G1 or G2, or a combination thereof. In the present embodiment, by using the cooling unit, the substrates G1 and G2 are maintained at the program temperature, and the reactivity between the substrates G1 and G2 and the deposition materials deposited on the upper surfaces of the substrates G1 and G2 is improved. The clip 522 sandwiches the edges of the substrates G1 and G2, and prevents the substrates G1 and G2 from moving when the substrates G1 and G2 horizontally mounted on the support plate 521 stand vertically. In the present embodiment, deposition masks M1 and M2 each having a predetermined deposition pattern are formed on the substrates G1 and G2, respectively, to rise on the substrates G1 and G2 and form a thin film pattern. Therefore, the dermatizer 522 can be used to securely mount all of the substrates gi and G2 and the deposition masks mi and M2 on the support plate 521. The first substrate holder 520 and the second substrate holder 530 are used to accommodate the substrates G1 and G2, respectively. Also, the first substrate holder 520 and the second substrate holder 53 〇 201145639 are spaced apart from each other by a predetermined distance from the vertical plane, such that when either of the first substrate holder 52 and the second substrate holder 530 is rotated to its level or In the vertical position, the 苴 does not touch or affect the other substrate. The r source 540 is disposed in the first substrate holder 520 and the second substrate holder 530. In detail, the deposition source 54 is positioned to face one of the substrates G1 and G2 rotated to the vertical position for manual processing and the deposition source 54 is used for facing the evaporation material toward the substrate G1 or G2. Surface (that is, deposited.. surface). The lion 540 has a chamber for storing material, a heating of the evaporation material, and a dispenser for dispensing the evaporated material, which are not shown. The deposition source 540 can be a spot type, a line type, or a flat type. In the present embodiment, the deposition source 540 is of a point type in which a plurality of point deposition sources 541 are arranged in a column. The spot deposition source 54 is moved to the left and right = in the middle and back to move the material uniformly to the substrate (7) or the c surface by reciprocating the driving unit. The procedure for dispensing material onto the substrate (7) or 〇2 is performed while the substrate (7) or =2 is standing vertically. In order to maintain the substrate and the cymbal 2 in the vertical position, the first substrate holder 520 and the second substrate holder 53 〇 support the substrates (1) and G2 become specifically that the deposition source 540 is used to rotate against the first substrate holder 52 and 8 ( ° ° to distribute the material to the second substrate holder 53G, or to transfer 18 (Τ, to distribute the material to the first substrate holder 52 〇. According to this, the two procedures of the ten pairs of women in the single-device Line, using a single-deposition source 54. Membrane "Now" Reference will now be made to Figure 1, which generally illustrates a thin film deposition process performed by a deposition system having the above structure.
首先在大氣壓下，將已透過預處理形成正電極的基板 201145639 G放入載入單元no，然後載入單元11〇變成真空條件。接 著’將基板G相繼放入程序單元21〇、22〇、23〇、24〇、25〇 及260,沿著交替選擇的第一及第二程序線，執行一系列單 元程^。換句話說，在真空條件下，將基板G相繼放入HIL 形成單元21〇、HTL形成單元220、藍色-EML形成單元231、 綠色-EML形成單元232及紅色-EML形成單元233。據此， 在各基板G的正電極上相繼形成HIL、HTL及EML。接下 來，將基板G相繼放入ETL形成單元240、EIL形成單元 250及負電極形成單元26卜262及263。結果，在各基板G 的EML上形成ETL、EIL及複數個負電極，以此方式形成 〇LED。之後’將所得基板G輸送至卸載單元120，然後在 大氣壓下，釋出外部。 一〜同時，參考圖3及4,薄膜沉積裝置可包括固定單元1〇。 當谷納基板G的第-基板夾52〇及第二基板炎53()被輸送 至腔室中時，第-基板爽52〇及第二基板夾53〇纟固定單元 1〇,卡在腔室巾的指定位置，並固定在指定位置持續預定時 間週期。指定位置是第一基板央52〇及第二基板夹53〇中容 基板G與遮罩精確對準的位置。據此，可以根據廠商 设計，在各基板上形成正確的薄膜圖案。 可由影像拾取元件在光學上執行基板及遮罩之間的精 2準’影像拾取元件諸如電荷#合元件(CCD)、互補金氧 厂體(，M〇S博。在上述的本具體實施例中，由於容納基 f 第一基板夾520及第二基板夾53〇由固定單元1〇穩 疋口定於&定位置’因而達成基板G及遮罩間的穩定對準。 同時，固疋單元1〇可包括固定部件丨1及升降部件12。 12 201145639 疋卩件11卡住升降部件12，使升降部件12透過固定部 弟基板夾520及第二基板夾530的底部。當第 一基板夾520及第二基板夾53〇固定於指定位置時，升降部 件12的至少一部分形成插入於固定部件11。升降部件12 可包括液壓缸。或者，升降部件12可包括線性馬達。 固定部件11可以圓錐形形狀形成。升降部件12的尖端 亦可以圓錐形形狀形成，以便容納於固定部件n中。或者， 固ΪΙ卩件11可以圓柱形形狀形成，在此例中，升降部件12 的尖&Τ以半球升》狀形成，以便可輕易地插入固 或從中抽出。 ^同時，參考圖5及6，薄膜沉積裝置可另外包括複數個 =進控制單元20。行進控制單元20限制第一基板夹52〇及 第二基板夾530在特定方向中行進。 每個行進控制單元20可包括導引部件21及驅動部件 22°導引部件(各為叫定位鄰接第一基板夾no及第二基板 夾530之每一個的兩側，以導引第一基板夾520及第二基板 ，兄〇的行進。驅動部件22造成導引部件21移動接近或遠 離，一基板夾520及第二基板夾53〇。每個驅動部件22可 以是線性馬達。或者，驅動部件22可以是液壓缸。 *導引部件21可以是複數個滾輪，沿著第一基板夾52〇 及第二基板夾530之每一個的兩侧處的一個邊緣配置。當第 一基板夾520及第二基板夾53〇被放入腔室，使沉積材料分 配於基板上時’由驅動部件22移動滚輪靠近第一基板夾52〇 及第二基板夾530。可適當設定滾輪間的間隔最大值，以防 13 201145639 止第一基板夾520及第二基板夾530過度傾斜而與滾輪脫 離。將滾輪間的間隔最小值設定為稍窄於第一基板夾520及 第一基板炎530的每一個的厚度。 透過該複數個滾輪移動第一基板夾520及第二基板夾 530 ’可使第一基板夾52〇及第二基板夾53〇穩定移動。還 有’該複數個滾輪用以在將沉積材料沉積於基板G上時， 穩定夾持第一基板夾520及第二基板失530，藉此提供抵擋 鄰接組件震動的抵抗性。因此，可提高將沉積材料沉積於基 板上的可靠性。 此外，由於在基板G與遮罩對準時，由行進控制單元 2〇夾持第一基板夾520及第二基板夾53〇的上方部分，可 達成穩定對準。 同時，輸送滾輪30可提供於第一基板夾52〇及第二基 板夾530的底部下方。輸送滾輪3〇配置在各腔室(未顯示) ，二輸送滾輪30用以在一個方向中移動第一基板夾52〇及 第二基板爽530。然而，也可以使用輸送帶取代輸送滾輪 3〇，配置在第一基板夾52〇及第二基板夾53〇的底部下方。 同時，在薄膜沉積程序中，以垂直於地面的垂直站立位 置輸送各基板G。然而，亦可以平行於地面的水平位置輪送 各基板G。在以平行於地面的水平位置輸送基板G時， f個別程序單元21G、22G、23G、㈣、25G及中使二 =G站立的程序。以下將參考圖7至12詳細說明此程序。 \至12為解釋根據—具體實施例之薄膜沉積系統之單元 程序的平面圖。 干凡 14 201145639 、如圖7所不’透過第—基板入口 51.1a，將從第一程序線 以，水平位置輸送的第—基板⑴放入程序單元2⑽然後 將第-基板G1裝在水平放置之第一基板夾52〇的支樓板 上。，下f，從連接至料單元的第—遮罩容納單元 =〇提供第-沉積遮罩Ml，及將第一沉積遮罩M1放在第 一上(見圖8)。然後，如圖8所示，第一基板夾520 益522夾住基板G1及第一沉積遮罩船，然後將第一 j夹520旋轉90。’變成垂直狀態。據此，第一基板⑴ 、面面對沉積源54〇的分配方向。沉積源54〇朝向第一基 ，反G1，表面分配蒸發材料時，執行在第—基板⑴上沉積 溥膜的第一薄膜沉積程序。 戈口圆9所示 、 仕將弟一基板G1放入程序單元200時或 你U過ί二基板人口 511b，將從第二程序線以其水平 ，运的第二基板G2放入程序單元細。第二基板〇2 ^乂平放置之第二基板夾53G的支樓板上，及從連接至程 M2早d2GG的第二遮罩容納單元32G ’供應第二沉積遮罩 2 (見圖10，然後將其配置及配置在第二基板〇2上。接下 某板示’在第二基板夹530的央器512夾住第二 二，將第二基板夹53。旋轉 沉靜H 處’配置/配置第二基板G2及第二 置時===膜沉積程序期間執行，以將前 將、％ ί If，如圖11所示’在第—薄膜沉積程序終止後， 、冗積二Ϊ源540的分配方向面對第二基板G2的表面，及^ ，積源540將蒸發材料分配到第二基板㈤的表面上時，執 15 201145639 行在第二基板G2Jl沉積_的第二薄觀積程序。同時， 如圖12所示，在執行第二薄膜沉積程序時，第一基板央52〇 返回其水平狀態’且第一沉積遮罩M1與第—基板⑺分離。 之後’第-基板G1透過第-基板出口 512a釋 元程序。同時，在第—及第二薄膜沉積程雜，與 第一基板G1及苐二基板G2分離的第—沉積遮罩及第 二沉積遮罩M2留在對應單元巾，待後續沉難序中使用， -沉積遮罩Ml及第二沉積遮罩M2在因沾有灰塵、破 損等而必須更換時，被輸送至第-遮罩容納單元310及第二 遮罩容納單元320，'然後取出。之後，透過清洗、修復等， 再重新使用第-沉積遮罩M1及第二 第:遮罩容納單元31G及第二遮罩容納單元也可;^有 取代已用過沉積遮罩的額外沉積遮罩。 /以此方式，由於根據上述具體實施例的薄膜沉積系統使 別程序單元210、22〇、23〇、24〇、25〇及26〇中提供的 早一沉積源540，能夠在個別程序單元21〇、22〇、23〇、24〇、 及26〇中安裝的複數個程序線PL1及PL2上，執行連續 3膜沉積程序’可同時減少成本及提高生產率。此外，由 ^ —耘序線上的另一基板上執行薄膜沉積的同時，在一 =I上執行基板輸送及基板配置/遮罩相對於基板的配 置，可減少前置時間，進而提高生產專。 上文已經說明若干範例。但應明白，可進行各種修改。 二、如果以不同順序執行所述技術，及/或如果在所述系 Jim!"構、、元件、或電路中的部件以不同方式組合及/或為 ΐ件ί其等效物取代或補充，仍可達成適當結果。據 -他貫施例均在以下申請專利範圍的範疇中。 201145639 【圖式簡單說明】 成本說明書且構 「實施方式」㈣實施例，並連同 圖 圖1為圖解根據—具體實施例之薄膜沉積系統的平面 面圖 圖2為圖觸1薄膜沉積系統中所含薄膜沉積裝置的平 圖3 ^解㈣中第—或第二基板夾按—方 沉積糸統帽含薄觀縣置巾㈣之程相ffi]式。錢 ，：圖或第二基板夾在由圖3所示薄膜沉置 中固定早兀固定時的狀態。 ★圖f圖解由圖3所示薄膜沉積裝置中行進控制單元引導 第一或第二基板夾行進時的狀態。 圖6為解釋其中行進控制單元在圖3所*薄膜沉積裝置 中操作之程序的圖式。 π圖7至12為解釋根據—具體實施例之薄膜沉積系統之 單元程序的平面圖。 【主要元件符號說明】 10 固定單元 11 固定部件 12 升降部件 20 行進控制單元 21導引部件 17 201145639 22 驅動部件 30 輸送滾輪 100腔室 110載入單元 120卸載單元 200薄膜沉積裝置 210 HIL形成單元 220 HTL形成單元 230 EML形成單元 231藍色-EML形成單元 232綠色-EML形成單元 233紅色-EML形成單元 240 ETL形成單元 250 EIL形成單元 260、26卜262、263負電極形成單元 200 : 210、220、230、240、250、260 程序單元 310第一遮罩容納單元 320第二遮罩容納單元 511a第一基板入口 511b第二基板入口 512a第一基板出口 512b第二基板出口 520第一基板夾 521支撐板 522夾器 18 201145639 523溫度控制單元 530第二基板夾 540、541、542 沉積源 600 : 610、620 吸震器 G、Gl、G2 基板 Ml第一沉積遮罩 M2第二沉積遮罩 PL1、PL2程序線 19First, the substrate 201145639 G which has been subjected to pretreatment to form a positive electrode is placed in the loading unit no under atmospheric pressure, and then the loading unit 11 turns into a vacuum condition. Next, the substrate G is successively placed in the program units 21, 22, 23, 24, 25, and 260, and a series of unit processes are executed along the alternately selected first and second program lines. In other words, the substrate G is successively placed in the HIL forming unit 21A, the HTL forming unit 220, the blue-EML forming unit 231, the green-EML forming unit 232, and the red-EML forming unit 233 under vacuum conditions. According to this, HIL, HTL, and EML are successively formed on the positive electrode of each substrate G. Next, the substrate G is successively placed in the ETL forming unit 240, the EIL forming unit 250, and the negative electrode forming unit 26, 262 and 263. As a result, ETL, EIL, and a plurality of negative electrodes are formed on the EML of each substrate G, and 〇LEDs are formed in this manner. Thereafter, the obtained substrate G is conveyed to the unloading unit 120, and then released to the outside under atmospheric pressure. Meanwhile, while referring to FIGS. 3 and 4, the thin film deposition apparatus may include a fixing unit 1A. When the first substrate holder 52〇 and the second substrate inflammation 53() of the guar substrate G are transported into the chamber, the first substrate cool 52 〇 and the second substrate holder 53 〇纟 the fixing unit 1 〇 are stuck in the cavity The designated position of the room towel is fixed at the designated position for a predetermined period of time. The designated position is a position at which the substrate G and the mask are precisely aligned with the first substrate center 52 and the second substrate holder 53. Accordingly, a correct film pattern can be formed on each substrate according to the manufacturer's design. The fine-picked image pickup element between the substrate and the mask, such as a charge-capable component (CCD) and a complementary gold-oxygen device (optional), can be optically performed by the image pickup element. In the above specific embodiment The first substrate holder 520 and the second substrate holder 53 are accommodated in the & position by the fixing unit 1 so that a stable alignment between the substrate G and the mask is achieved. The unit 1A may include a fixing member 丨1 and a lifting member 12. 12 201145639 The shackle 11 catches the lifting member 12 so that the lifting member 12 passes through the bottom portions of the fixing portion substrate holder 520 and the second substrate holder 530. When the first substrate When the clip 520 and the second substrate holder 53 are fixed at the designated positions, at least a part of the lifting member 12 is formed to be inserted into the fixing member 11. The lifting member 12 may include a hydraulic cylinder. Alternatively, the lifting member 12 may include a linear motor. The conical shape is formed. The tip end of the lifting member 12 may also be formed in a conical shape so as to be received in the fixing member n. Alternatively, the fixing member 11 may be formed in a cylindrical shape, in this case, the lifting member 12 &Τ is formed in a hemispherical shape so as to be easily inserted or extracted therefrom. ^ Meanwhile, referring to Figures 5 and 6, the thin film deposition apparatus may additionally include a plurality of = control units 20. The travel control unit 20 limits the first The substrate holder 52 and the second substrate holder 530 travel in a specific direction. Each of the travel control units 20 may include a guiding member 21 and a driving member 22° guiding members (each of which is positioned adjacent to the first substrate holder no and the second The two sides of each of the substrate holders 530 guide the first substrate holder 520 and the second substrate to travel. The driving member 22 causes the guiding member 21 to move closer to or away from the substrate holder 520 and the second substrate holder. 53. Each of the drive members 22 may be a linear motor. Alternatively, the drive member 22 may be a hydraulic cylinder. * The guide member 21 may be a plurality of rollers along each of the first substrate holder 52 and the second substrate holder 530. An edge configuration at one of the sides. When the first substrate holder 520 and the second substrate holder 53 are placed in the chamber to distribute the deposition material onto the substrate, the roller is moved by the driving member 22 to approach the first substrate holder 52. 〇 and second base The clip 530. The maximum interval between the rollers can be appropriately set to prevent the first substrate clip 520 and the second substrate clip 530 from being excessively tilted and detached from the roller, and the minimum interval between the rollers is set to be slightly narrower than the first. The thickness of each of the substrate holder 520 and the first substrate 530. The first substrate holder 52 and the second substrate holder 530 are moved by the plurality of rollers to stably move the first substrate holder 52 and the second substrate holder 53. Also, the plurality of rollers are used to stably hold the first substrate holder 520 and the second substrate 530 when the deposition material is deposited on the substrate G, thereby providing resistance against vibration of the adjacent components. Therefore, the reliability of depositing the deposited material on the substrate can be improved. Further, since the upper portion of the first substrate holder 520 and the second substrate holder 53 is held by the travel control unit 2 when the substrate G is aligned with the mask, stable alignment can be achieved. At the same time, the transport roller 30 can be provided below the bottom of the first substrate holder 52 and the second substrate holder 530. The conveying roller 3 is disposed in each chamber (not shown), and the second conveying roller 30 is configured to move the first substrate holder 52 and the second substrate 530 in one direction. However, it is also possible to use a conveyor belt instead of the transport roller 3〇, which is disposed below the bottom of the first substrate holder 52〇 and the second substrate holder 53〇. At the same time, in the film deposition process, the substrates G are transported in a vertical standing position perpendicular to the ground. However, it is also possible to rotate each of the substrates G parallel to the horizontal position of the ground. When the substrate G is transported at a horizontal position parallel to the ground, the program of the individual program units 21G, 22G, 23G, (4), 25G, and the middle two = G stands. This procedure will be described in detail below with reference to Figs. \ to 12 are plan views for explaining the unit procedure of the thin film deposition system according to the specific embodiment.凡凡14 201145639, as shown in Fig. 7, through the first substrate inlet 51.1a, the first substrate (1) transported from the first program line in a horizontal position is placed in the program unit 2 (10) and then the first substrate G1 is placed horizontally. The first substrate holder 52 is on the side of the floor. , f, from the first-mask receiving unit connected to the material unit = 〇 provides the first deposition mask M1, and the first deposition mask M1 is placed on the first (see Fig. 8). Then, as shown in FIG. 8, the first substrate holder 520 encloses the substrate G1 and the first deposition mask boat, and then rotates the first j clip 520 by 90. 'turned into a vertical state. According to this, the first substrate (1) faces the distribution direction of the deposition source 54A. When the deposition source 54 is directed toward the first substrate, the reverse G1, and the surface is distributed with the evaporation material, a first thin film deposition process of depositing the ruthenium film on the first substrate (1) is performed. As shown by Gekouyuan 9, when a substrate G1 is placed in the program unit 200 or you are over the substrate population 511b, the second substrate G2 that is transported from the second program line is placed in the program unit. . a second substrate 〇 2 ^ 乂 flat placed on the gusset plate of the second substrate holder 53G, and a second deposition mask 2 is supplied from the second mask accommodating unit 32G ′ connected to the process M2 early d2GG (see FIG. 10, then It is configured and arranged on the second substrate 〇 2. Next, a certain plate is shown, 'the second ii is clamped on the second 512 of the second substrate holder 530, and the second substrate is clamped 53. Rotating at the H position' configuration/configuration The second substrate G2 and the second timing === are performed during the film deposition process to be the first, % ί If, as shown in FIG. 11 'after the termination of the first film deposition process, the redundancy of the source 540 The distribution direction faces the surface of the second substrate G2, and when the accumulation source 540 distributes the evaporation material onto the surface of the second substrate (5), the second thin-spectrum program of the deposition of the second substrate G2J1 is performed. Meanwhile, as shown in FIG. 12, when the second thin film deposition process is performed, the first substrate central end 52 〇 returns to its horizontal state ' and the first deposition mask M1 is separated from the first substrate (7). Then the 'first substrate G1 passes through the first - a substrate exit 512a release process. At the same time, the first and second thin film deposition processes are mixed with the first base The first deposition mask and the second deposition mask M2 separated by the G1 and the second substrate G2 are left in the corresponding unit towel, and are used in the subsequent sinking sequence, and the deposition mask M1 and the second deposition mask M2 are in contact with each other. When it is necessary to replace dust, damage, etc., it is transported to the first-mask housing unit 310 and the second mask housing unit 320, and then taken out. After that, the first deposition mask M1 is reused by cleaning, repairing, and the like. The second: the mask housing unit 31G and the second mask housing unit may also have an additional deposition mask that has replaced the used deposition mask. / In this way, due to the thin film deposition system according to the above specific embodiment The early deposition source 540 provided in the program units 210, 22A, 23A, 24A, 25A and 26 can be installed in the individual program units 21〇, 22〇, 23〇, 24〇, and 26〇 Performing a continuous 3 film deposition process on a plurality of program lines PL1 and PL2 can simultaneously reduce cost and increase productivity. Further, while performing thin film deposition on another substrate on the line, it is performed at one = I Substrate transport and substrate configuration/mask relative to substrate Configuration, which reduces lead time and thus increases production expertise. Several examples have been described above, but it should be understood that various modifications can be made. 2. If the techniques are performed in a different order, and/or if in the department Jim! The components in the structure, components, or circuits are combined in different ways and/or replaced or supplemented by the equivalents of the components. The appropriate results can still be achieved. 201145639 [Simplified description of the drawings] The description of the cost and the "embodiment" (4) embodiment, together with the figure Figure 1 is a plan view of the thin film deposition system according to the specific embodiment, Figure 2 is a thin film deposition of the touch 1 The plan of the film deposition apparatus contained in the system is the same as that of the second substrate holder, or the second substrate is clamped to the surface of the film. The money, the figure or the second substrate is sandwiched between the state in which the film is fixed by the film deposition shown in Fig. 3. Fig. f illustrates a state in which the first or second substrate holder is guided by the travel control unit in the thin film deposition apparatus shown in Fig. 3. Fig. 6 is a view for explaining a procedure in which the travel control unit operates in the thin film deposition apparatus of Fig. 3. π Figures 7 through 12 are plan views explaining the unit procedure of the thin film deposition system according to the specific embodiment. [Main component symbol description] 10 fixing unit 11 fixing member 12 lifting member 20 traveling control unit 21 guiding member 17 201145639 22 driving member 30 conveying roller 100 chamber 110 loading unit 120 unloading unit 200 thin film deposition device 210 HIL forming unit 220 HTL forming unit 230 EML forming unit 231 Blue-EML forming unit 232 Green-EML forming unit 233 Red-EML forming unit 240 ETL forming unit 250 EIL forming unit 260, 26 262, 263 Negative electrode forming unit 200: 210, 220 230, 240, 250, 260 program unit 310 first mask housing unit 320 second mask housing unit 511a first substrate inlet 511b second substrate inlet 512a first substrate outlet 512b second substrate outlet 520 first substrate holder 521 Support plate 522 clamp 18 201145639 523 temperature control unit 530 second substrate clamp 540, 541, 542 deposition source 600: 610, 620 shock absorber G, Gl, G2 substrate M1 first deposition mask M2 second deposition mask PL1 PL2 program line 19