201119102 六、發明說明： 【發明所屬之技術領域】 本發明係種發光二祕，特別是指—種具有紐熱基板之 疊/覆晶式發光二極體。 【先前技術】 發光二極體（Lighting Emitting Diodes ; LED)是一種由半導體材 料構成’糊半導體巾的電子與制結合而發以子，產生不同頻率 之光譜的發光元件，由於發光二極體光源具有良好的色純度、無汞、 修哥命長及省電等特色，因此在照明及顯示器背光源等應用上逐漸受到 重視。 發光二極體的職接合方駐要有_，-為域⑽eb〇ndjng) 方式，另一為覆晶（flipchip)方式；其中打線方式所使用之導線會阻 播到光路’覆晶方式則可避免此雜，進而提升其發光效率。請參照 第1圖，係繪示先前技術所提供之覆晶式發光二極體之示意圖。因為 覆晶式發光二極體結構是將發光二極體單元3〇直接藉由電極或是凸 塊20與底層的散熱基板（subm_t) 1〇作接觸，可更有效率地將熱 轉至散熱基板1〇,比起-般發光二極體藍fs(sapph㈣基板的低傳 #導基材有更佳的導熱特性，使得發光二極體可得到較佳的電氣特性， 並可大幅提昇7L件的散熱效果’更可適用於大面積高功率之發光二極 體產品，例如，藍色、綠色等短波長的發光二極體。 此外’為了使高功率發光二極體能有效的導熱，在散熱基板的材 料方面，印刷電路基板(Pn_nted c丨_ B〇ard ; PCB)、陶兗基板 (Ceramic Substrate)、向熱傳導係數的銅(c〇pper)或結(A|晒-叫叫等 ，屬基板等都是-般常用的導熱或散熱材料。其中，pcB基板的成本 最為便宜’且絕雜優異，但是傳統pcB基_材f為_纖維愈環 氧樹脂，顯然導熱與耐熱性質不佳，不適合用於高功率發光二極體的 封衣’因此金屬基板與陶莞基板就逐漸發展。陶竟基板有耐高溫、耐 201119102 優點:_其導齡值仍麵步钟，而金屬基板具有良好的 導熱f、電祕緣性和機械加工性，為目前高功率發光二極體最 的散熱基板，但是金雜祕構料覆上—層絕緣層，製程上 的問題非常_，f如需考f絲魏騎_祕雜、接合技術。 【發明内容】 參於以上關題，本發_主要目的在於提供—種高散熱之疊增 晶式發光二極體，其散熱紐具有可提高散熱效果之導練結構，不 但可提昇發光二極體的發光效能，延長元件仙壽命，改善元件穩定 度，同時關促進元件的小型化及低價化，藉以讀上解決先前技術 存在之缺失。 因此’為達上述目的，本發明所揭露之高散熱之疊/覆晶式發光二 極，，是由散熱基板與發光二極體單元所構成，散熱基板上製作有複 數貝孔，且在貫孔中填入高導熱係數之導熱材料而形成複數導熱柱， 發光二極體單元則以疊晶或覆晶方式裝設於散熱基板上，當發光二極 體單元產生熱量後，熱量會轉移至散熱基板，然後透過導熱柱的高熱 傳導性而快速散發出去，以達到高效能散熱。 本發明中’導熱枉有效提昇了散熱基板的散熱能力，在實務上可 應用於成本低廉的PCB基板’使PCB基板的適用範圍能夠衍伸至高 功率發光二極體封裝，當然，本發明更可應用於矽基板或陶瓷基板， 使得散熱效果愈佳，元件更能發揮優異的效能，徹底解決高功率發光 二極體的散熱問題。 為使對本發明的目的、構造特徵及其功能有進一步的了解，茲配 合圖式詳細說明如下： 【實施方式】 請參照第2圖，繪示本發明之第一實施例所提供之高散熱之覆晶 式發光二極體之示意圖。 本實施例中，高散熱之覆晶式發光二極體主要包括散熱基板 201119102 100、導電層110、發光二極體單元12()與散熱金屬層13G;散熱基板 100選自印刷電路基板，其上具有導電層11〇，並製作有多個貫孔 101 ’然後在貫孔101中填入高導熱係數的導熱材料，譬如銘、鋼、 金、銀等金屬材料，而形成具有高熱傳導能力的導熱柱102，以繁助 散熱基板100發揮高效能的散熱，並且，在散熱基板1〇〇下方製作散 熱金屬層130，然後以覆晶方式將發光二極體單元12〇安裝於導電層 110上，使得發光二極體單元120所產生且積聚在散熱基板彳〇〇上的 熱量，可透過導熱柱102的高熱傳導能力而快速逸散至外界，同時， 散熱金屬層130會幫助經由散熱基板彳00及導熱柱彳〇2傳導的熱量更 ®容易逸散到空氣1f7，使散熱效果達到最佳化。 而發光二極體單元120是藉由成長η型半導體層122、主動層 (Active Layer) 123、ρ型半導體層124、ρ型接觸層125以及η型 接觸層126於透光基板121上所製成，透明基板121可為藍寶石基板 (Sapphire)、碳化石夕(SiC)基板、三氧化二銘(αι2〇3)基板、氮化鎵(GaN) 基板、氣化紹(AIN)基板，η型半導體層122則設置於透光基板121上， 主動層123與η型接觸層126設置於η型半導體層122上，ρ型半導 體層124設置於主動層123上’ρ型接觸層125設置於ρ型半導體層 124上，且ρ型接觸層125與η型接觸層126分別與正電壓源與負電 壓源連接’以供導入順向電壓，使ρ型半導體層124之電洞與η型半 導體122層之電子可於主動層結合而發光。此發光二極體單元12〇是 以覆晶方式使用錫球凸塊（solder bump) 127反貼接合於散熱基板1〇 上方的導電層110上，且錫球凸塊127的形狀並不予以限定，其可以 是圓形、方形或是任何需要應用的形狀。 请參照第3圖，本發明第二貫施例是將多個發光二極體單元12〇、 140覆晶接合於散熱基板100上方，散熱基板1〇〇對應每個發光二極 體早元120、140設有導熱柱102、104 ’來繁助發光二極體單元12Q、 140的熱量逸散。 上述貫施例將導熱柱設計於印刷電路基板’使得原本為低熱傳導 201119102 係數之印刷電路基板的散熱效能大為提高，可將印刷電路基板的適用 範圍衍伸至高功率發光二極體封裝，藉以降低製作成本。另外，散熱 基板亦可使用陶瓷基板，譬如為氮化鋁基板或氧化鋁基板，雖然陶瓷 基板已具有較佳的導熱能力，本發明係可藉由導熱柱將陶瓷基板的散 熱性能進一步提昇’將能徹底解決高功率發光二極體的散熱問題，使 元件發揮優異的效能。請參照第4圖，顯示本發明之第三實施例，散 熱基板100可選擇為矽基板’散熱基板1〇0於貫孔側壁會生成一層二 氧化矽之氧化層103包圍著導熱柱1〇2。 另一方面’本發明之發光二極體亦可利用疊晶方式建構在散熱基 板；請參照第5圖所示，本發明之第四實施例係揭露一種疊晶式發光 二極體’其中發光二極體120係藉由黏著性與導熱性良好之黏著層105 例如為銀膠來黏著於散熱基板1〇〇之導電層上，並利用銲線技術 (Wire Bond)電性連接至散熱基板100之導電層彳1〇，此散熱基板1〇〇 將可藉助導熱柱102高的熱傳導能力，幫助發光二極體12〇的埶量快 速逸散。 綜^所述’本發明為了滿足高功率發光二極體的散熱需求，而提 供種冋散熱之璺/覆晶式發光二極體，利用導熱柱的設置可將散熱基 板之熱阻大崎低’藉以避免高神發光二極體產生的熱量累積而造 成讀產生祕’並且’從而可提昇發光二極體的發光效能及改呈 碰的歡度，同時，能舰進元件削、魏及低價化，創造極高二 雖然本發明以前述之實施例揭露如上，然其並非用以限定本 ^。f不麟本㈣之精神和範_ ’所為之更動與_，均屬本發 ，之，利保賴圍。關於本發明所界定之保護範圍請參考所附二 專利範圍。 τ 【圖式簡單說明】 第1圖係繪示先前技術所提供之覆晶式發光二極體之示意圖； 201119102 第2圖係繪示本發明之第一實施例所提供之高散熱之覆晶式發光二極 體之示意圖； 第3圖係本發明之第二實施例所提供之高散熱之覆晶式發光二極體之 示意圖； 第4圖係本發明之第三實施例所提供之高散熱之覆晶式發光二極體之 示意圖；以及 第5圖係本發明之第四實施例所提供之高散熱之疊晶式發光二極體之 示意圖。 【主要元件符號説明】 10散熱基板 20凸塊 30發光二極體單元 1〇〇散熱基板 101貫孔 102導熱柱 103氧化層 104導熱柱 105黏著層 110導電層 120發光二極體举元 121透明基板 122 η型半導體;| 123主動層 124 ρ型半導體層 125 ρ型接觸層 126 η型接觸層 127錫球凸塊 201119102 130散熱金屬層 140發光二極體單元201119102 VI. Description of the Invention: [Technical Field According to the Invention] The present invention relates to a second type of light-emitting diode, and more particularly to a stacked/over-clad light-emitting diode having a heat-sensitive substrate. [Prior Art] A Light Emitting Diodes (LED) is a kind of light-emitting element which is composed of a semiconductor material and which combines the electrons and the system of the paste semiconductor towel to generate a spectrum of different frequencies, due to the light-emitting diode light source. With good color purity, no mercury, long life and power saving, it has gradually gained attention in applications such as lighting and display backlights. The working junction of the LED is _, - is the domain (10) eb〇ndjng), and the other is the flipchip method; the wire used in the wire bonding method is blocked to the optical path. Avoid this miscellaneous, and thus improve its luminous efficiency. Referring to Figure 1, there is shown a schematic diagram of a flip-chip light emitting diode provided by the prior art. Because the flip-chip LED structure is such that the LED unit 3 is directly contacted with the bottom substrate (subm_t) through the electrode or the bump 20, the heat can be transferred to the heat dissipation more efficiently. The substrate 1〇 has better thermal conductivity than the low-transmission substrate of the sapph (four) substrate, so that the light-emitting diode can obtain better electrical characteristics and can greatly improve the 7L piece. The heat dissipation effect is more suitable for large-area high-power LED products, such as short-wavelength light-emitting diodes such as blue and green. In addition, in order to enable high-power LEDs to effectively conduct heat, heat dissipation The material of the substrate, printed circuit board (Pn_nted c丨_B〇ard; PCB), ceramic substrate (Ceramic Substrate), copper (c〇pper) or junction (A|baking-calling, etc.) The substrate and the like are all commonly used heat conduction or heat dissipation materials. Among them, the cost of the pcB substrate is the cheapest 'and the excellent and excellent, but the conventional pcB base material_ is the fiber epoxy resin, and the heat conduction and heat resistance properties are not good. Not suitable for high power LEDs 'Therefore, the metal substrate and the ceramic substrate are gradually developed. The ceramic substrate has high temperature resistance and resistance to 201119102. Advantages: _ its lead age value is still step clock, and the metal substrate has good thermal conductivity f, electrical edge and mechanical processing. It is the most heat-dissipating substrate for the current high-power light-emitting diodes, but the gold miscellaneous material is covered with a layer of insulating layer, and the problem in the process is very _, f if you need to test f silk Wei riding _ secret, bonding technology. SUMMARY OF THE INVENTION In view of the above, the main purpose of the present invention is to provide a high-heat-dissipating multi-layered light-emitting diode, the heat-dissipating button has a guiding structure capable of improving heat dissipation, and can not only improve the light-emitting diode The luminous efficiency, prolonging the life of the component, improving the stability of the component, and at the same time promoting the miniaturization and low cost of the component, thereby reading and solving the lack of the prior art. Therefore, the high heat dissipation disclosed by the present invention is achieved. The stacked/clad-type light-emitting diode is composed of a heat-dissipating substrate and a light-emitting diode unit. The heat-dissipating substrate is formed with a plurality of shell holes, and the through-hole is filled with a heat-conducting material having a high thermal conductivity. The plurality of heat-conducting columns are mounted on the heat-dissipating substrate in a stacked or flip-chip manner. When the light-emitting diode unit generates heat, the heat is transferred to the heat-dissipating substrate, and then the high thermal conductivity is transmitted through the heat-conducting column. In the present invention, the 'thermal conduction 枉 effectively improves the heat dissipation capability of the heat dissipation substrate, and can be applied to a low-cost PCB substrate in practice', so that the applicable range of the PCB substrate can be extended to high-power illumination. Diode package, of course, the invention can be applied to a germanium substrate or a ceramic substrate, so that the heat dissipation effect is better, the component can exert excellent performance, and the heat dissipation problem of the high power light emitting diode is completely solved. The purpose, structure, and function are further understood. The following is a detailed description of the following: [Embodiment] Please refer to FIG. 2, which illustrates a high-heat-dissipation flip-chip illumination provided by the first embodiment of the present invention. Schematic diagram of the polar body. In this embodiment, the high-heat-dissipating flip-chip light-emitting diode mainly includes a heat-dissipating substrate 201119102 100, a conductive layer 110, a light-emitting diode unit 12 and a heat-dissipating metal layer 13G, and the heat-dissipating substrate 100 is selected from a printed circuit board. The conductive layer 11 上 has a plurality of through holes 101 ′ and then filled with a high thermal conductivity thermal conductive material, such as metal materials such as Ming, steel, gold, silver, etc., to form a high thermal conductivity. The heat-conducting column 102 is configured to heat-dissipate the heat-dissipating substrate 100 to perform high-efficiency heat dissipation, and the heat-dissipating metal layer 130 is formed under the heat-dissipating substrate 1 , and then the light-emitting diode unit 12 is mounted on the conductive layer 110 in a flip chip manner. The heat generated by the LED unit 120 and accumulated on the heat dissipating substrate can be quickly dissipated to the outside through the high thermal conductivity of the heat conducting column 102, and the heat dissipating metal layer 130 can help through the heat dissipating substrate. 00 and the heat transferred by the heat transfer column 彳〇2 are more easily dissipated to the air 1f7, which optimizes the heat dissipation effect. The light emitting diode unit 120 is formed on the transparent substrate 121 by growing the n-type semiconductor layer 122, the active layer 123, the p-type semiconductor layer 124, the p-type contact layer 125, and the n-type contact layer 126. The transparent substrate 121 may be a sapphire substrate, a carbon carbide (SiC) substrate, a bismuth oxide (αι2〇3) substrate, a gallium nitride (GaN) substrate, an AIN substrate, and an n-type substrate. The semiconductor layer 122 is disposed on the transparent substrate 121, the active layer 123 and the n-type contact layer 126 are disposed on the n-type semiconductor layer 122, and the p-type semiconductor layer 124 is disposed on the active layer 123. The p-type contact layer 125 is disposed on the ρ. On the semiconductor layer 124, the p-type contact layer 125 and the n-type contact layer 126 are respectively connected to the positive voltage source and the negative voltage source for introducing a forward voltage, and the hole of the p-type semiconductor layer 124 and the n-type semiconductor 122 The electrons of the layer can be combined to emit light in the active layer. The LED unit 12 is flip-chip bonded to the conductive layer 110 above the heat dissipation substrate 1 by using a solder bump 127, and the shape of the solder bump 127 is not limited. It can be round, square or any shape that needs to be applied. Referring to FIG. 3, in the second embodiment of the present invention, a plurality of light emitting diode units 12A and 140 are flip-chip bonded to the upper surface of the heat dissipation substrate 100, and the heat dissipation substrate 1 is corresponding to each of the light emitting diodes. The heat transfer columns 102, 104' are provided to facilitate the heat dissipation of the light-emitting diode units 12Q, 140. The above-mentioned embodiment of the heat-conducting column is designed on the printed circuit board to greatly improve the heat dissipation performance of the printed circuit board which is originally a low heat conduction 201119102 coefficient, and the applicable range of the printed circuit board can be extended to the high-power light-emitting diode package, thereby Reduce production costs. In addition, the heat dissipation substrate can also use a ceramic substrate, such as an aluminum nitride substrate or an aluminum oxide substrate. Although the ceramic substrate has better thermal conductivity, the present invention can further improve the heat dissipation performance of the ceramic substrate by using a heat conducting column. It can completely solve the heat dissipation problem of high-power LEDs and make the components perform excellently. Referring to FIG. 4, a third embodiment of the present invention is shown. The heat dissipating substrate 100 can be selected as a germanium substrate. The heat dissipating substrate 1〇0 generates a layer of ceria oxide layer 103 on the sidewall of the through hole to surround the heat conducting column 1〇2. . On the other hand, the light-emitting diode of the present invention can also be laminated on the heat-dissipating substrate by using a stacked crystal; as shown in FIG. 5, the fourth embodiment of the present invention discloses a stacked-type light-emitting diode in which light is emitted. The polarizer 120 is adhered to the conductive layer of the heat dissipation substrate 1 by an adhesive layer 105 having good adhesion and thermal conductivity, for example, silver paste, and is electrically connected to the heat dissipation substrate 100 by wire bonding. The conductive layer 彳1〇, the heat-dissipating substrate 1 〇〇 can help the light-emitting diode 12 快速 to quickly escape due to the high thermal conductivity of the heat-conducting column 102. In order to meet the heat dissipation requirements of high-power light-emitting diodes, the present invention provides a heat-dissipating/flip-chip light-emitting diode, and the thermal resistance of the heat-dissipating substrate can be reduced by the arrangement of the heat-conducting column. By avoiding the accumulation of heat generated by the high-intensity light-emitting diodes, the reading produces a secret 'and' which can improve the luminous efficacy of the light-emitting diode and the joy of changing the touch. At the same time, the ship can be cut into components, reduced in size and low in price. The present invention is disclosed above in the foregoing embodiments, but it is not intended to limit the present invention. f is not the spirit of Lin (4) and the _ _ is the change and _, are the hair, and the protection of the surrounding. Please refer to the attached scope of the patent for the scope of protection defined by the present invention. τ [Simple description of the drawing] FIG. 1 is a schematic view showing a flip-chip type light-emitting diode provided by the prior art; 201119102 FIG. 2 is a diagram showing a high-heat-dissipation flip chip provided by the first embodiment of the present invention. Schematic diagram of a light-emitting diode; FIG. 3 is a schematic diagram of a high-heat-dissipation flip-chip light-emitting diode provided by a second embodiment of the present invention; FIG. 4 is a view of the third embodiment of the present invention. Schematic diagram of a heat-dissipating flip-chip light-emitting diode; and FIG. 5 is a schematic diagram of a high-heat-dissipating stacked light-emitting diode according to a fourth embodiment of the present invention. [Main component symbol description] 10 heat sink substrate 20 bump 30 light emitting diode unit 1 heat sink substrate 101 through hole 102 heat conductive column 103 oxide layer 104 heat conductive column 105 adhesive layer 110 conductive layer 120 light emitting diode 121 transparent Substrate 122 n-type semiconductor; | 123 active layer 124 p-type semiconductor layer 125 p-type contact layer 126 n-type contact layer 127 solder ball bump 201119102 130 heat dissipation metal layer 140 light-emitting diode unit