TW201044061A - Active device array substrate and display panel - Google Patents

Abstract

An active device array substrate is provided by defining the light transmittance and the optical density of a black matrix thereof, wherein the black matrix has high light transmittance to the detecting light source with long wavelength of an alignment apparatus for improving the recognizing ability of the alignment apparatus to fiducial marks. The black matrix further has high optical density to the display light source with short wavelength for maintain high display contrast. Furthermore, the fiducial marks can be fabricated from at least two metal layers to increase the total thickness of the metal layers and thereby enlarge the inclined plane of the metal layers for being as marking patterns to enhance the recognizing ability of the alignment apparatus to the fiducial marks.

Description

201044M9". [Technical Field] The present invention relates to an active device array substrate and a display panel, and more particularly to an active device array substrate capable of improving the recognition degree of a positioning machine for a positioning mark And a display panel to which the active device array substrate is applied. ^ [Prior Art] Traditional liquid day and day panels are not covered by a private color light substrate (Color Filter

Substrate), a thin film transistor array substrate (TFT Array Substrate), and a liquid crystal layer (Liquid Crystal Layer) disposed between the two substrates. Nowadays, a technique of directly integrating a color filter film on a thin film transistor array substrate (COA) or a black matrix on a thin film transistor array substrate (Black Matrix on Array, BOA) is proposed. A COA substrate or a BOA substrate is assembled with another opposite substrate, and liquid crystal molecules are filled between the two substrates to form a liquid crystal display panel. However, it is conventional to perform a process of a COA substrate or a BOA substrate or to form a liquid crystal display panel, since the alignment mark is formed on a c〇A substrate or a BOA substrate, and a black matrix on the c〇A substrate or the BOA substrate. The positioning mark will be covered, which will often affect the positioning of the positioning machine. In particular, in order to improve the display contrast of the liquid crystal display panel, the Qptieal Density (QD) material is used to make the black matrix = and the material having the high 〇D value will also be excellent in the shading effect. Make the clamp mark difficult to be discerned by the positioning machine, and affect the alignment of the 201044061 j\\JU6vyvy\ 30532twf.doc/n accuracy. In addition, the sale of a single layer of metal layer & The position of the mark. However, such a single-layer metal is marked as a defect in the process or a process limitation is not easy due to the limited thickness, so that the mark layer = the metal layer of the bevel affects the alignment machine pair mark pattern == or 疋The size is not large enough. Therefore, the present invention provides a high display contrast requirement and a display requirement of an active element panel. The invention provides a __ substrate, and can provide an excellent ratio of the array; the panel has a good discrimination === It is proposed that the active device array substrate is disposed at least ~ /, including the substrate, and the board, and cover you > no. Bu, the black matrix is arranged in the base region, and the plurality of active Γ ° black matrix is divided into a plurality of materials on the substrate to meet the following requirements. The black matrix transmittance needs to be greater than m, 4 800 ; the light λ1 wavelength of the matrix is λ2 < 25 GG nm; in addition, the black <780 nm 〇", the optical density needs to be greater than 2.5, of which 380 nmg2 30532 twf.doc/n 201044061 In one embodiment, 800 nmS: Us15()() nm. In one embodiment, 500 nmg human 2 < 600 nm. In the embodiment, the black density for the wavelength λ2 is greater than 3.5. In the embodiment, the material of the black matrix comprises an oxidized metal or material.

In an external embodiment, the positioning mark includes at least one first metal layer and a first metal layer, wherein the sidewall of the first metal layer includes a -th-bevel, and the second metal layer is on the first surface layer, and Exposing the first bevel, and the sidewall of the second metal layer includes - second: another active device array substrate comprising a substrate, and at least a mark. The substrate has a plurality of elements! %彳 corresponds to a pure configuration. The positioning mark is disposed on the substrate, the first metal layer and the second metal layer, wherein the first - 厗::::3 includes a first inclined surface, and the second metal layer is disposed on the first - gold: The first bevel is formed, and the sidewall of the second metal layer includes a bevel. ‘Fen==: It is noted that the first metal layer and the second metal layer including a central _ and the same one have P Λ* and the first inclined surface is connected to the second inclined surface and is coplanar. The second metal layer 2:: face: the first metal layer described has a top surface ′ and the second is proposed to: and expose the peripheral region of the top surface. a ',,, member panel, comprising the foregoing active device array 201044061 八30532 twf.doc / n column substrate, a pair of substrates and a display medium layer, wherein the display medium layer is disposed on the active device array substrate and the opposite substrate between. Based on the above, the active device array substrate defines the optical tooth transmittance and the optical density of the black matrix, so that the alignment machine has a good recognition degree for the positioning target 3, and can maintain a good display contrast at the same time. . On the other hand, the structure of the positioning mark can be formed by using at least two layers of metal layers to increase the total thickness of the metal layer, so that the metal bevel as the marking pattern is relatively enlarged, and the recognition of the positioning mark by the alignment machine is improved. The above described features and advantages of the present invention will become more apparent from the description of the appended claims. [Embodiment] The present invention provides an active device array substrate, which defines a light j rate and an optical density of a black matrix, and a black matrix of a black matrix which is used for a side wave of a wavelength used by a positioning machine. Light transmittance, the machine has a good recognition of the positioning mark. At the same time, the black matrix still learns density for display filaments with shorter wavelengths showing the pupil surface to maintain good display contrast. With this kind of special machine:: At the same time, the high display contrast of the display panel and the high recognition requirement of the alignment, mouth and squat. On the other hand, the structure of the second and the second Si Si is improved by the use of the two-two energy mark. As the total thickness of the metal layer increases, the metal bevel of the bitmap* is also relatively large, which helps to improve the touch of the alignment mark on the machine. For 30532 twf.doc/n 201044061t, the optical density referred to herein is the characterization of the material's light-shielding ability, which is the logarithm of the ratio of the incident light intensity to the transmitted light intensity of the material, which is equivalent to the logarithm of the reciprocal of the light transmittance, ie the optical density 〇D =loglO (transmitted light intensity / incident light intensity) or optical density 〇 D = l 〇 gl 〇 (l / light transmittance). When the value of 〇1) is equal to 0, the material does not absorb light, and the light transmittance is 1%. When the OD value is specific to infinity, the material absorbs all of the light and the light transmission rate is zero. In the following, a detailed method for recognizing the positioning mark of the alignment machine by using a specific black matrix and a modified clamp 4 is shown by different embodiments. 1 is a schematic diagram of an active device array substrate in accordance with an embodiment of the present invention. As shown in FIG. 1 , the active device array substrate 1 〇〇 may be a COA substrate or a BOA substrate, wherein the substrate 1 〇 2 has a black matrix 〇疋 〇疋 〇疋 〇疋 〇疋 〇疋 ι ι ι ι ι ι ι ι ι ι ι 〇 4. The individual pixel structures 120 correspond to the pixel region 1〇4 configuration, respectively, and each of the two-element structures 120 may include a wire element and other elements (4) such as an electrode, a color light film, or a storage capacitor. In addition, the substrate abundance surface is formed with a positioning mark 13〇, and a black rotating two-position mark 1301, wherein the manufacturing method is that the black matrix (10) film is covered on the positioning mark BG, and the scale light shows π = position mark. § Black UG above 13G will be removed. ^ After the black matrix and the light are placed on the positioning mark (10), and the black matrix is covered and the photoresist layer is removed, the inner matrix 11 above the two photoresist layer 130 is combined, and the disc is set in the 疋The bit mark I and the matrix 110 are broken and removed. The positioning mark 130 can be positioned on the substrate l〇2 in the group 201044061 /\uu6uyu9l 30532twf.doc/n or other processes for the alignment machine (not shown). Here, the active device 120 is, for example, a thin film transistor, and the positioning mark 130 may be composed of any one or more layers of metal of the active device array substrate 1 , that is, the positioning mark 130 may be other than the substrate 1 〇 2 The components are produced synchronously. Of course, the positioning marks 13A of the present embodiment may also be formed separately from other elements on the substrate 102, i.e., formed on the substrate 102 by an additional step. In order to enable the active component array substrate 100 to meet the high display contrast requirement of the display panel and the high recognition requirement of the alignment mark of the alignment machine in the subsequent process, the present embodiment has the following requirements for the material of the black matrix 11?. Firstly, for the high recognition requirement of the alignment mark on the positioning machine in the subsequent process, the rice 5 aligning machine uses the detection light source u with a long wavelength of λ1, and the black matrix needs to have a higher light transmittance for the wavelength λ 大于. 15%, so that a sufficient amount of detection light source L1 can smoothly pass through the black matrix 11〇, so that the alignment machine can have good recognition of the positioning mark. Here, the range of the long wavelength λ1 is, for example, 800 ηηη$λ1 < 2500 ηιη, more specifically 800 ηπι $ λ1 $ 1500 ηιη, and 85 〇 nm$u$1 〇〇〇 nm, which is the more common alignment machine. Furthermore, for the high display contrast requirement of the display panel, assuming that the display panel is used to display the wavelength of the display light source L2 of the facet is λ2, the optical density of the black matrix for the wavelength λ2 needs to be greater than 2.5 to effectively block unnecessary backlights. Maintain a good display contrast. Here, the range of the wavelength λ2 of the display light source L2 is, for example, 380 nmSλ2 < 780 nm. In another embodiment, it is more preferable to set the optical density of the black matrix for a display light source of a longer wavelength band, e.g., a display light source that conforms to the range of 500 ηπι$λ2 < 201044061 30532 twf.doc/n όΟΟηηη. Of course, the light transmittance of the black matrix at the wavelength λ1 or the optical density for the wavelength λ2 is a value that can be mixed according to actual needs. For example, when the south display contrast requirement of the 7F panel is strong, the optical density of the black matrix for the wavelength λ2 can be increased to a value of 35 or higher. 2 is a graph of light transmittance of a black matrix material for each band in accordance with an embodiment of the present invention. As shown in Fig. 2, the black matrix material has a high transmittance in the long wavelength range of 800 nm or more, so that the detection light source of the alignment machine can clearly identify the positioning target under the black matrix. In addition, such a black matrix material maintains a low transmittance (high optical density) in the wavelength band of the display source to maintain good display contrast. This embodiment proposes a plurality of black matrices which can meet the foregoing requirements, and the materials thereof have various compositions, and the main components include metal oxides (such as silver oxide, tin oxide, etc.) or organic pigments (such as red pigments, blue pigments, yellow pigments) or The two compounds, carbon black (carb〇nblack), propylene glycol methyl ether acetate + butyl diglycol acetate + methoxybutyl acetate or propylene glycol oxime ether acetate + acetic acid _ The solvent formed by 3-methoxybutyl ester, and the remaining additives which may be present, such as acrylic resin (polyacrylic acid), photoinitiator, crosslinking agent, light combination agent and the like. Shows the composition of two kinds of black matrix possible (wt%): ----- ---- ^ ^ , 4 —-—. • H Wang Hao, Li Er, dry q Yuet y 7 first Black matrix material ugly / 7 force and knife · 1 « The second black matrix material carbon black + metal oxide (such as silver oxide, tin oxide, etc.) carbon black 0~50%, metal oxide 1~10% - 1 201044061

Auu6uyu91 30532twf.doc/n Carbon black + organic pigments (eg red pigment, blue pigment, yellow pigment) Photoinitiator "^ Acrylic resin (polyacrylic acid) Other additives (such as crosslinkers, coupling agents, etc.) ~~~------ Solvent (propylene glycol oxime ether acetate + butyl diglycol acetate + 3-methoxybutyl acetate) carbon black 1~10%, red pigment 1~5%, blue Color pigment 1~5%, yellow pigment 1-5% 0- 3% 1- 15%

0-3% 60-95%

° The degree of recognition. Specifically, at least two layers of metal layers are used to form the positioning marks. Since the total thickness of the metal layer is increased, the metal slope which can be used as the marking pattern is also relatively large, which contributes to the improvement of the identification of the positioning mark by the positioning machine. 3A and 3B are respectively a top view and a side view of a positioning mark in accordance with an embodiment of the present invention. As shown in FIGS. 3A and 3B, the positioning mark 300 is disposed on the substrate 370 by a first metal layer 310 and - 10th

O o 201044061 30532twf.doc/n ΐί genus. If the alignment mark 3GG is formed in synchronization with a member on the substrate 370 (such as a die-bonding transistor) or other components, the first layer 310 and the second metal layer 32 are, for example, _metals for forming a thin film transistor, respectively. Layer and source and secret metal layers. (4) In this case, the label 300 may be formed separately from the other elements on the substrate 37, that is, the straw is formed on the substrate 370 by an additional step. Referring again to FIGS. 3-8 and 3B, the sidewall of the first metal layer includes a slope 312' and the second metal layer 32 is disposed on the first metal layer 310, exposing the first slope 312, and the second metal The sidewall of the layer 32 has a second slope 322. The first oblique φ 312 and the second inclined surface can reflect the side light source u of the alignment machine to form a marking pattern. In order to facilitate the alignment and identification of the machine, the positioning mark can be designed in various shapes. For example, in FIG. 3A, the alignment mark 300 includes a central block 3〇2 and a plurality of peripheral blocks 304 disposed around the central block 302. In this embodiment, the first metal layer 310 and the second metal layer 32A may have the same pattern 'and the first slope 312 of the first metal layer 31 is connected to the second slope 322 of the first metal layer 320, for example. And coplanar. Of course, the structure of this ^ month; ^5 own structure is not limited to this. In the other embodiment illustrated in FIG. 4, 'the first metal layer 31' has a top surface 314', and the second gold layer 320 is placed on the top surface 314 and exposes the periphery of the top surface 314. Before the area 0, the positioning mark of the embodiment shown in Figs. 3A, 3B and Fig. 4 can be implemented independently or applied to the silk element array substrate shown in Fig. 1 to match the black (four) material. , to get the best machine pair 11 201044061

Auusuyu9l 30532twfdoc/n bit effect is compared with the display. Further, Fig. 5 further illustrates a display panel to which the active element array substrate and the clamp mark structure of the foregoing various embodiments are applied. As shown in FIG. 5, the display panel 500 includes an active device array substrate 51, a pair of substrates 52A, and a display medium layer 530. The active device array substrate 51() is, for example, a thin film transistor array substrate, and may be a c〇A substrate or a B〇A substrate, which adopts the technical contents of the foregoing various embodiments, and selects a specific black moment.

Array material, positioning mark structure or a combination of the two to achieve better machine alignment and display contrast. Further, in response to the active device array substrate 51, which may be a COA substrate or a BOA substrate, the opposite substrate 52 may have a common electrode or a color filter or a light sheet. The display medium layer 53 is, for example, a liquid crystal layer disposed between the active device array substrate and the opposite substrate 52G as a display light valve. The above-mentioned invention proposes an active device array substrate and a display panel to which the element array substrate is applied, and the black matrix used has a higher light for the (four) long-wavelength detection light of the alignment machine. The penetration rate is such that the alignment mark of the positioner (4) has good recognition. In addition, the display of the shorter moments of the picture shows a fine display contrast. In addition, the structure of the bit mark is improved, and two or more metal layers are used to form the read mark, and the (four) material mark ' is enlarged to increase the _ degree of the alignment mark of the alignment machine. ~,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, In the scope of the invention, the scope of protection that can be modified and retouched is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram of an active element board in accordance with an embodiment of the present invention. FIG. 2 is a black matrix material in accordance with an embodiment of the present invention. Rate graph. 3A and 3B are top and side views, respectively, of a positioning mark in accordance with an embodiment of the present invention. 4 is a side elevational view of a positioning mark in accordance with another embodiment of the present invention. FIG. 5 illustrates a display panel in accordance with an embodiment of the present invention. [Main component symbol description] 1〇〇: Active device array substrate ° 102: Substrate 104: Alizarin region 11〇: Black matrix 120: Alizarin structure 130: Positioning mark L1: Detection light source L2: Display light source 300: Positioning mark 13 30532twf.doc/n 201044061 302: central block 304: peripheral block 310: first metal layer 312: first slope 314: top surface 320 of first metal layer: second metal layer 322 · second slope 370 : Substrate 500 : display panel 510 : active device array substrate 520 : opposite substrate 530 : display dielectric layer

14

Claims (1)

201044061 30532twf.doc/n VII. Patent application scope: 1. An active device array substrate, comprising: a substrate; at least one positioning mark disposed on the substrate; A black matrix is disposed on the substrate and covers the positioning mark, and the black matrix defines a plurality of pixel regions on the substrate, the black matrix having a light transmittance of greater than 15% for the wavelength λ1, wherein 800 ηιη$ Λ1 < 2500 nm, and the optical density of the black matrix for the wavelength λ2 is greater than 2.5, wherein 380 ηηι$λ2 <78〇ηιη; and the active element 'corresponds to the pixel region configuration. 2. The active component as described in item 1 of the patent scope is 8〇〇nn^Msi5〇〇nm. 3. For example, the active device array substrate in the scope of claim 1 is 500 ηιη$λ2<_ nm. 4. The silk element array substrate of claim 1, wherein the black matrix has an optical density greater than 35 for the wavelength λ2. The active device array substrate according to the above item 1, wherein the material comprises an oxidized metal or an organic pigment. The active device array substrate according to item 1 of the patent scope of the basin, and the active mother active element are thin film transistors. Wherein (4) the element stock substrate is disposed on the first == wall slope, the second metal layer, the genus layer, and the violent road exits the first slope, and the second 15 201044061 /\uw〇u7v; 91 30532twf The sidewall of the .doc/n metal layer includes a second bevel. 8. The active device array substrate of claim 7, wherein the target includes a central block and a plurality of peripheral blocks disposed around the central block. 9. The active device array substrate as described in claim 7, wherein the first metal layer and the second metal layer have the same shape, and the first slope is connected to the second slope and is coplanar. 10. The active device array substrate of claim 7, wherein the first metal layer has a top surface, and the second metal layer is disposed on the top surface and exposes a peripheral region of the top surface . 11. An active device array substrate, comprising: a substrate having a plurality of pixel regions; a plurality of active elements corresponding to the pixel regions; and a) positioning mark disposed on the substrate, wherein the positioning The mark includes at least a first metal layer and a second metal layer, the sidewall of the first metal layer includes a first slope, the second metal layer is disposed on the first metal layer, and exposes the first slope And the sidewall of the second metal layer includes a second slope. 12. The active device array substrate of claim 5, wherein each active component is a thin film transistor. 13. The active device array substrate as described in claim 5, wherein the positioning mark comprises a central block and a plurality of peripheral blocks disposed around the central block. 14. The active device array base 16 201044061 ^-------91 30532 twf.doc/n as claimed in claim 5 has the same shape as the second metal layer. The first slope is connected to the second slope and is coplanar. Small, plate, special gold n encircles the active element array base as described in item 11; il? top surface, and the second metal layer is matched; On the top surface of the sea, and expose the peripheral area of the top surface. (4) Configuration 16.-type display panel, including: O o As claimed in the first paragraph of the patent scope * - opposite substrate: from, social movement reading _ substrate; substrate ^ section (four) (four) Yuanxian County board and the opposite direction 17 · As claimed in claim 16th, the substrate comprises a thin film electric== board, wherein the opposite substrate; such as Du_Call, wherein the 19. Display panel, wherein the display panel comprises: an active device array substrate as claimed in item 9 of the == range; - an opposite substrate; and a substrate λ layer" The component _ substrate with the opposite side 21. As claimed in the patent application, the second 〇 initiative is not the panel, where the ~ Γ money % crystal column substrate. 22. The display panel of claim 2, wherein the 201044061 Λυυου^υ^Ι 30532 twf.doc/n opposite substrate comprises a color filter. 23. As claimed in claim 2 The display panel, wherein the member layer does not include a liquid crystal layer. The display panel of claim 2, wherein the surface has the same shape as the first skew ===. The display panel ^^ of the slanting - 2nd gold circumference item 20 has a surface and the second metal layer is disposed on the top surface and violently exits the peripheral area of the top surface. θ 18