201007979 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種發光元件製造方法，尤指一種發光二 極體製造方法。 【先前技術】 發光二極體（Light Emitting Diode, LED)具有環保、 © 亮度高、省電、壽命長等諸多特點，將漸漸成為主要照明 光源。單個發光二極體晶粒之亮度有限，需組合複數發光 二極體才能滿足高亮度照明需求。業内通常是將發光二極 體晶粒從發光二極體晶片中切割後取出並放入導電架中， 然後經過打線、灌膠等封裝工藝後形成單顆發光二極體， 然發光二極體晶粒之體積小，取放發光二極體晶粒過程中 吸附發光二極體晶粒較為困難。 ❹ 【發明内容】 鑒於此，有必要提供一種製造簡便且成本較低之發光 二極體製造方法。 一種發光二極體製造方法，包括以下步驟：提供一發 光二極體晶片’該發光二極體晶片包括一襯底，於該襯底 上形成複數發光二極體晶粒；於發光二極體晶粒之週圍形 成一保護層；於保護層上沉積一電極層，電極層與每一發 光二極體晶粒電連接並作為每一發光二極體晶粒之第一電 極；提供一導電板，將該導電板錤裝於電極層上；去除發 201007979 光二極體晶片之襯底，並於每一發光二極體晶粒上形成第 二電極；去除每一發光二極體晶粒週圍之保護層；於每一 . 發光二極體晶粒之週圍開設一通槽，每一通槽分別上下貫 - 11電極層及導電板；提供—基座，將該基座崎於電極層 上，該基座上開設複數通孔，該複數通孔與該複數發光二 * 極體晶粒一一對應，每一發光二極體晶粒收容於相對應之 通孔中；把每一發光二極體晶粒之第二電極電: ，上，並向基座之通孔内填紐光材料，該== 包覆每一發光二極體晶粒；切割使該複數發光二極體晶粒 相互分離，每一發光二極體晶粒分別形成—發光二極 該發光二極體包括一通槽、一電極層及—導電板，發光一 極體之通槽使發光一極體之電極層分為相互絕緣之第一部 分及第二部分，並使導電板分為相互絕緣之第一外電極及 第二外電極。 與習知技術相比較，本發明之發光二極體製造方法， # 餅同-發光二極體晶壯之所有發光二極體晶粒一體式 同步封裝，無須逐個取放發光二極體晶粒，製造方法簡便 且成本較低。 【實施方式】 如圖1所示，本發明之發光二極體製造方法包括 步驟： 提供一發光二極體晶片1，該發光二極體晶片丨包括一 襯底11 ’於該發光二極體晶片i上形成複數發光二極體晶 201007979 粒12 ; 於發光二極體晶粒12週圍形成一保護層η ; • 於保護層13上形成一電極層14 ; - 提供一導電板15’將該導電板15組裝於電極層14上； 去除發光二極體晶片1之襯底U，並於每一發光二極 ' 體晶粒12上形成第二電極122 ; 去除每一發光二極體晶粒12週圍之保護層13 ; ❹ 於每一發光二極體晶粒12之侧向開設通槽161，通槽 161上下貫通電極層14及導電板15 ; 提供一基座17，將該基座17組裝於該電極層14上， 並使發光二極體晶粒12收容於基座17之通孔中； 打線及密封； 切割使該複數發光二極體晶粒12相互分離，每一發光 一極體晶粒12分別形成一發光二極體。 下面結合具體圖示具體描述該發光二極體之製備過 φ 程。 首先’如® 2所示，提供一發光二極體晶片丄，該發光 二極體晶）1 i包括-襯底U，該概底u上生長外延層，外 延層為構成p-n結之半導體，外延層之材料可為坤化鎵、磷 坤化鎵、钟化銘鎵等，襯底U之材料可為藍寶石等，切宝 ^卜延層從而於襯底η上形成複數發光二極體晶粒12，該 複數發光二極體晶粒間隔分佈於襯底U上，相鄰發光 =極體晶粒12之間形成間隙111。 其次，如圖3所示，於發光二極體晶片1上塗布一保 201007979 護層13 ’該賴層13可為光阻，塗布方法可採用旋布法 (spin coating)，採用光學微影方法於該保護層13上與發 、 光^極體晶粒12相對應之位置處形成微孔131，該保護層 ； 13用於定義發光二極體晶粒12之第-電極圖案。保護層 13填充發光二極體晶粒12之間之間隙m，保護層13之 頂面呈凹凸不平狀且高於發光二極體晶粒12，微孔i3i之 孔徑小於發光二極體晶粒12之尺寸，從而每一發光二極體 晶粒12之四週部分為保護層13所覆蓋，僅有中央之部分 頂面透過微孔131與外界空氣接觸。 再次，如圖4所示，於保護層13上沉積一電極層14， 该電極層14對應保護層13之微孔131所在位置向下突出 並填滿微孔131，電極層14之頂面為一平面，電極層14 與母一發光二極體晶粒12電連接從而作為每一發光二極體 晶粒12之第一電極’沉積方式可採用電子束蒸發、熱蒸發 或濺射法。該電極層14上進一步沉積由導電材料製成之第 ❹ 一結合層141，第一結合層141可由共晶合金製成，如鋁矽 合金或碎銅合金等。 接著’如圖5所示，提供一導電板15，該導電板15 由導電材料製成’該導電板25之下表面上進一步形成由導 電材料製成之第二結合層151，第二結合層151可由共晶合 金製成，如鋁矽合金或矽銅合金等，之後將該導電板15組 裝於電極層14上。其中，可採用晶片接合（wafer bonding ) 方法將導電板15組裝於電極層14上’使第一結合層141 及第二結合層151作為黏合層，藉由其二者表面之化學鍵 201007979 與化學鍵之間結合，從而將導電板15組裝於電極層i4上。 再接著，如圖6及圖7所示’將發光二極體晶片丄倒 ' 置，去除發光二極體晶片1之襯底11，使得該複數發光二 . 極體日日粒12之底面露出，並於每-發光二極體晶粒12之 底面上（即圖6及圖7所示之頂部）分別沉積一電極122， 電極122分別與相對應之發光二極體晶粒12電連接從而作 為發光二極體晶粒12之第二電極。去除襯底n之方法可 ❹ 採用晶片剝離法，例如鐳射剝離法或濕式剝離法。電極122 之沉積方式可採用電鍍、磁控濺射等方法。 緊接著，如圖8所示，去除每一發光二極體晶粒12週 圍之保護層13，露出電極層14，每一發光二極體晶粒12 週圍於去除保護層13後形成間隙123。 接下來，如圖9所示’於電極層14上開設複數通槽 Ml ’該複數通槽161與該複數發光二極體晶粒12之數量 對應，每一通槽161形成於相對應發光二極體晶粒12之外 ❹ 侧並緊鄰該發光二極體晶粒12，該複數通槽161均上下依 次貫通電極層14及導電板15’通槽161内可填充絕緣材料。 然後，如圖10及圖11所示，提供一基座17，基座17 由絕緣材料製成，將該基座17組裝於該電極層14上，該 基座17上開設複數通孔171 ’該複數通孔171與該複數發 光二極體晶粒12--對應，每一發光二極體晶粒12收容 於相對應之通孔171中，每一通孔171週圍之側壁172上 形成一導電柱173，每一導電柱173貫通基座17並電連接 於電極層14 ; 11 201007979 之後為打線及密封’如圖12所示，打線是指利用導線 18把每一發光二極體晶粒12之電極122電連接於基座17 - 之導電柱173，進而電連接於電極層14 ’導線18可採用金 線或鋁線等導電材料。密封是指向基座17之通孔171内填 充透光材料19 ’該透光材料19分別包覆每一發光二極體晶 ' 粒12 ’使發光二極體晶粒12與外界隔離，還可作為透鏡以 提高出光率’透光材料19可採用環氧樹脂、壓克力、石夕膠 ❹ 等高透光、高機械強度、強耐濕性材料，透光材料19中還 可參雜螢光粉’密封時可採用模具一體式灌膠密封，適合 大批量生產。 最後，如圖12至圖14所示，切割基座17、電極層14 及導電板15 ’使該複數發光二極體晶粒12相互分離，每一 發光一極體晶粒12分別形成一發光二極體2。發光二極體 2包括一導電板21、一電極層22、一發光二極體晶粒12 及一基座23 ,其中導電板21由導電板15切割分離而成， Ο 電極層22由電極層14切割分離而成，基座23由基座17 切割分離而成。通槽161將電極層22及導電板21均一分 為二，即把導電板21分為相互絕緣之第一外電極211及第 一外電極212，把電極層22分為相互絕緣之第一部分221 及第二部分222，其中導電板21之第一外電極211及第二 外電極212分別作為發光二極體2之外接電源端，電極層 22之第一部分221作為發光二極體晶粒12之第一電極並電 連接於第一外電極211，發光二極體晶粒12之電極122作 為發光二極體晶粒12之第二電極，電極122依次藉由導線 12 201007979 18、基座23之導電柱233(即基座17之導電柱173)、電極 層22之第二部分222電連接至第二外電極212。 為了清楚說明切割過程，於圖12及圖13中用虛線示 出切割道4以表示切割軌跡。切割道4包括複數橫向切割 - 道421、422及縱向切割道411、412,相鄰之二橫向切割道 , 421、422及相鄰之二縱向切割道411、412分佈於每一發光 二極體晶粒12之週圍並構成一正方形24，該正方形24為 ^ 單顆發光二極體區域，每一發光二極體晶粒12所對應之導 電柱173、透光材料19及導線18均位於該正方形24内。 沿切割道4切割後，相鄰之二橫向切割道421、422及相鄰 之二縱向切割道411、412使得相鄰之發光二極體晶粒12 相互分離，每一發光二極體晶粒12分別形成一發光二極體 2。每一發光二極體晶粒12之通槽161貫通相鄰之二橫向 切割道421、422，則通槽161使得發光二極體2之導電板 21分為相互絕緣之第一外電極211及第二外電極212，亦 ❹ 使得發光二極體2之電極層22分為相互絕緣之第一部分 221及第二部分222。 在本發明中，同一發光二極體晶片1上之所有發光二 極體晶粒12無須切割後逐一取放於導電架中進行封裝，而 是一體式同步形成導電板15、基座17、打線及密封後，再 進行切割形成完整之單顆發光二極體2,相對於習知技術而 ° 本發明無須吸附發光二極體晶粒12，減少工序，縮短 製造時間，更適用於批量生產，降低製造成本。 圖15示出本發明又一較佳實施方式，與上一實施方式 13 201007979 不同之處在於’基座37之側壁372上沒有開設導電柱，在 打線步驟中，直接利用導線18將發光二極 極m電連接於電極層14。 Μ 綜上所述，本發明符合發明專利之要件，爰依法提出 專考】申明准以上所述者僅為本發明之較佳實施例，舉凡 熟悉本案技藝之人士，在爰依本發㈣神所作之等效修飾 或變化，皆應涵蓋於以下之申請專利範圍内。201007979 IX. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing a light-emitting element, and more particularly to a method of manufacturing a light-emitting diode. [Prior Art] Light Emitting Diode (LED) is environmentally friendly, with high brightness, power saving, long life and many other features, and will gradually become the main source of illumination. The brightness of a single light-emitting diode has a limited brightness, and it is necessary to combine a plurality of light-emitting diodes to meet the demand for high-brightness illumination. In the industry, the LED die is usually cut out from the LED chip and placed in a conductive frame, and then formed into a single light-emitting diode after being subjected to a packaging process such as wire bonding or potting, and the light-emitting diode is formed. The volume of the bulk crystal grains is small, and it is difficult to adsorb the light-emitting diode crystal grains during the process of picking up and emitting the light-emitting diode crystal grains. SUMMARY OF THE INVENTION In view of the above, it is necessary to provide a method of manufacturing a light-emitting diode which is simple in manufacturing and low in cost. A method for manufacturing a light-emitting diode, comprising the steps of: providing a light-emitting diode wafer, wherein the light-emitting diode chip comprises a substrate on which a plurality of light-emitting diode crystal grains are formed; and the light-emitting diode Forming a protective layer around the die; depositing an electrode layer on the protective layer, the electrode layer is electrically connected to each of the light emitting diode grains and serving as a first electrode of each of the light emitting diode grains; providing a conductive plate The conductive plate is mounted on the electrode layer; the substrate of the 201007979 photodiode wafer is removed, and a second electrode is formed on each of the light emitting diode grains; and the periphery of each of the light emitting diode grains is removed a protective layer; a through groove is formed around each of the light emitting diode grains, and each of the through grooves is vertically connected to the 11th electrode layer and the conductive plate; and the base is provided, and the base is on the electrode layer, the base a plurality of through holes are formed in the seat, and the plurality of through holes are in one-to-one correspondence with the plurality of light emitting diodes, and each of the light emitting diodes is received in the corresponding through hole; each of the light emitting diodes is crystallized The second electrode of the particle is: Filling the via hole with a light-emitting material, the == coating each of the light-emitting diode crystal grains; cutting causes the plurality of light-emitting diode crystal grains to be separated from each other, and each light-emitting diode crystal grain is separately formed - a light-emitting diode The light emitting diode includes a through groove, an electrode layer and a conductive plate, and the through hole of the light emitting body divides the electrode layer of the light emitting body into the first portion and the second portion which are insulated from each other, and divides the conductive plate into a first outer electrode and a second outer electrode insulated from each other. Compared with the prior art, the light-emitting diode manufacturing method of the present invention, all of the light-emitting diode-die integrated synchronous packages of the pie-and-light-emitting diode crystal, does not need to pick and place the light-emitting diode crystals one by one. The manufacturing method is simple and the cost is low. [Embodiment] As shown in FIG. 1, the method for fabricating a light-emitting diode of the present invention comprises the steps of: providing a light-emitting diode wafer 1 comprising a substrate 11' to the light-emitting diode Forming a plurality of light-emitting diode crystals 201007979 on the wafer i; forming a protective layer η around the light-emitting diode die 12; forming an electrode layer 14 on the protective layer 13; providing a conductive plate 15' The conductive plate 15 is assembled on the electrode layer 14; the substrate U of the light-emitting diode wafer 1 is removed, and the second electrode 122 is formed on each of the light-emitting diode chips 12; each of the light-emitting diode grains is removed a protective layer 13 around the periphery of the light-emitting diode die 12; a through-groove 161 is formed in the lateral direction of the light-emitting diode die 12; the through-hole 161 penetrates the electrode layer 14 and the conductive plate 15 up and down; and a pedestal 17 is provided. Assembling on the electrode layer 14 and accommodating the LED die 12 in the through hole of the pedestal 17; wire bonding and sealing; cutting to separate the plurality of illuminating diode dies 12 from each other The body grains 12 respectively form a light emitting diode. The preparation process of the light-emitting diode will be specifically described below in conjunction with a specific illustration. First, as shown in FIG. 2, a light-emitting diode wafer 丄, the light-emitting diode crystal 1 i includes a substrate U on which an epitaxial layer is grown, and the epitaxial layer is a semiconductor constituting a pn junction. The material of the epitaxial layer may be a gallium arsenide, a gallium arsenide, a lanthanum gallium, etc., and the material of the substrate U may be sapphire or the like, and the sapphire layer is formed to form a plurality of light-emitting diode crystal grains on the substrate η. The plurality of light-emitting diode crystal grains are spaced apart on the substrate U, and a gap 111 is formed between the adjacent light-emitting bodies and the polar body grains 12. Next, as shown in FIG. 3, a protective layer 201007979 is applied to the light-emitting diode wafer 1 and the layer 13 can be a photoresist. The coating method can be performed by a spin coating method using an optical lithography method. A microhole 131 is formed on the protective layer 13 at a position corresponding to the emitter and the photodiode die 12, and the protective layer 13 is used to define a first electrode pattern of the light emitting diode die 12. The protective layer 13 fills the gap m between the light-emitting diode crystal grains 12, and the top surface of the protective layer 13 is uneven and higher than the light-emitting diode crystal grains 12. The pore diameter of the micro-hole i3i is smaller than that of the light-emitting diode crystal grains. The size of 12 is such that the peripheral portion of each of the light-emitting diode dies 12 is covered by the protective layer 13, and only the central portion of the top surface is in contact with the outside air through the micro holes 131. Again, as shown in FIG. 4, an electrode layer 14 is deposited on the protective layer 13, and the electrode layer 14 protrudes downward from the position of the microhole 131 of the protective layer 13 and fills the microhole 131. The top surface of the electrode layer 14 is In a plane, the electrode layer 14 is electrically connected to the mother-emitting diode die 12 so as to be deposited as a first electrode of each of the light-emitting diode chips 12 by electron beam evaporation, thermal evaporation or sputtering. Further, a first bonding layer 141 made of a conductive material is deposited on the electrode layer 14, and the first bonding layer 141 may be made of a eutectic alloy such as an aluminum-bismuth alloy or a copper-copper alloy. Then, as shown in FIG. 5, a conductive plate 15 is provided, which is made of a conductive material. A second bonding layer 151 made of a conductive material is further formed on the lower surface of the conductive plate 25, and the second bonding layer is formed. The 151 may be made of a eutectic alloy such as an aluminum-bismuth alloy or a beryllium copper alloy, etc., and then the conductive plate 15 is assembled on the electrode layer 14. Wherein, the conductive bonding plate 15 can be assembled on the electrode layer 14 by a wafer bonding method. The first bonding layer 141 and the second bonding layer 151 are used as an adhesive layer, and the chemical bonds 201007979 and chemical bonds are used on both surfaces thereof. The bonding is performed to assemble the conductive plate 15 on the electrode layer i4. Then, as shown in FIG. 6 and FIG. 7, 'the flip-chip of the light-emitting diode is collapsed', and the substrate 11 of the light-emitting diode wafer 1 is removed, so that the bottom surface of the plurality of light-emitting diodes 12 is exposed. And an electrode 122 is respectively deposited on the bottom surface of each of the light-emitting diode dies 12 (ie, the top portions shown in FIG. 6 and FIG. 7), and the electrodes 122 are electrically connected to the corresponding light-emitting diode dies 12, respectively. As the second electrode of the light-emitting diode die 12. The method of removing the substrate n may be a wafer lift-off method such as a laser lift-off method or a wet strip method. The electrode 122 can be deposited by electroplating, magnetron sputtering or the like. Next, as shown in Fig. 8, the protective layer 13 around each of the light-emitting diode dies 12 is removed to expose the electrode layer 14, and a gap 123 is formed around each of the light-emitting diode dies 12 after the protective layer 13 is removed. Next, as shown in FIG. 9, a plurality of through grooves M1 are formed on the electrode layer 14. The plurality of through grooves 161 correspond to the number of the plurality of light emitting diode chips 12, and each of the through grooves 161 is formed in the corresponding light emitting diode. The outer surface of the bulk crystal grain 12 is adjacent to the light-emitting diode die 12, and the plurality of through-holes 161 are sequentially penetrated through the electrode layer 14 and the conductive plate 15'. The through-hole 161 can be filled with an insulating material. Then, as shown in FIG. 10 and FIG. 11, a pedestal 17 is provided. The pedestal 17 is made of an insulating material, and the pedestal 17 is assembled on the electrode layer 14. A plurality of through holes 171' are defined in the pedestal 17. The plurality of through-holes 171 are corresponding to the plurality of light-emitting diode dies 12, and each of the light-emitting diode dies 12 is received in the corresponding through-hole 171, and a conductive layer is formed on the sidewall 172 around each of the through-holes 171. Column 173, each of the conductive pillars 173 penetrates the susceptor 17 and is electrically connected to the electrode layer 14; 11 201007979 is followed by wire bonding and sealing 'as shown in FIG. 12, the wire bonding means that each light-emitting diode die 12 is made by the wire 18. The electrode 122 is electrically connected to the conductive post 173 of the pedestal 17 - and is electrically connected to the electrode layer 14 ′. The wire 18 can be made of a conductive material such as a gold wire or an aluminum wire. The sealing is directed into the through hole 171 of the base 17 and filled with the light-transmitting material 19'. The light-transmitting material 19 respectively covers each of the light-emitting diode crystals 'grain 12' to isolate the light-emitting diode die 12 from the outside. As a lens to improve the light-emitting rate, the light-transmitting material 19 can be made of high-transmission, high-mechanical strength, and high-moisture resistance materials such as epoxy resin, acrylic, and stone enamel, and the light-transmitting material 19 can also be mixed with fire-fighting material. The light powder 'seal can be sealed with a mold-integrated glue, which is suitable for mass production. Finally, as shown in FIG. 12 to FIG. 14 , the dicing base 17 , the electrode layer 14 and the conductive plate 15 ′ separate the plurality of illuminating diode dies 12 from each other, and each of the illuminating monopole dies 12 respectively forms a illuminating light. Diode 2. The light-emitting diode 2 includes a conductive plate 21, an electrode layer 22, a light-emitting diode die 12 and a pedestal 23, wherein the conductive plate 21 is cut and separated by the conductive plate 15, and the 电极 electrode layer 22 is composed of an electrode layer. 14 is cut and separated, and the base 23 is cut and separated by the base 17. The through-hole 161 divides the electrode layer 22 and the conductive plate 21 into two, that is, divides the conductive plate 21 into the first outer electrode 211 and the first outer electrode 212 which are insulated from each other, and divides the electrode layer 22 into the first portion 221 which is insulated from each other. And the second portion 222, wherein the first outer electrode 211 and the second outer electrode 212 of the conductive plate 21 are respectively connected to the power supply terminal of the light-emitting diode 2, and the first portion 221 of the electrode layer 22 is used as the light-emitting diode die 12. The first electrode is electrically connected to the first outer electrode 211, and the electrode 122 of the light-emitting diode die 12 serves as the second electrode of the light-emitting diode die 12. The electrode 122 is sequentially connected by the wire 12 201007979 18 and the base 23 The conductive post 233 (i.e., the conductive post 173 of the pedestal 17) and the second portion 222 of the electrode layer 22 are electrically connected to the second outer electrode 212. In order to clarify the cutting process, the scribe line 4 is shown by broken lines in Figs. 12 and 13 to indicate the cutting trajectory. The scribe line 4 includes a plurality of transverse cut-channels 421, 422 and longitudinal cuts 411, 412, two adjacent transverse cuts, 421, 422 and two adjacent longitudinal cuts 411, 412 are distributed in each of the light-emitting diodes A square 24 is formed around the die 12, and the square 24 is a single light-emitting diode region. The conductive pillars 173, the light-transmitting material 19 and the wires 18 corresponding to each of the light-emitting diode chips 12 are located at the same. Within square 24. After cutting along the scribe line 4, the adjacent two transverse dicing streets 421, 422 and the adjacent two longitudinal dicing streets 411, 412 separate the adjacent luminescent diode dies 12 from each other, each illuminating diode dies 12 forms a light-emitting diode 2, respectively. The through grooves 161 of each of the light emitting diodes 12 pass through the adjacent two horizontal cutting streets 421 and 422, and the through grooves 161 divide the conductive plates 21 of the light emitting diodes 2 into the first outer electrodes 211 which are insulated from each other and The second outer electrode 212 also causes the electrode layer 22 of the light-emitting diode 2 to be divided into a first portion 221 and a second portion 222 which are insulated from each other. In the present invention, all of the light-emitting diode chips 12 on the same LED chip 1 are not placed in the conductive frame for packaging, but are integrally formed into a conductive plate 15, a base 17, and a wire. After sealing, it is cut to form a complete single light-emitting diode 2, which is different from the prior art. The present invention does not need to adsorb the light-emitting diode die 12, which reduces the process, shortens the manufacturing time, and is more suitable for mass production. Reduce manufacturing costs. Figure 15 shows a further preferred embodiment of the present invention, which differs from the previous embodiment 13 201007979 in that the conductive column is not provided on the side wall 372 of the base 37. In the wire bonding step, the light-emitting diode is directly used by the wire 18. m is electrically connected to the electrode layer 14.综 In summary, the present invention meets the requirements of the invention patent, and the special test is proposed according to law. The above description is only the preferred embodiment of the present invention, and anyone familiar with the skill of the present invention is dependent on the present (4) god. Equivalent modifications or variations are intended to be included within the scope of the following claims.
【圖式簡單說明】 圖1為本發明之發光二極體製造方法之-較佳實施例 之流程圖。 圖2為圖1所示方法令形成發光二極體晶粒後之 别面示意圖。 圖3為圖1所示方法中形成保護層後之局部剖面示章 圖。 圖4為圖1所示方法中形成電極層後之局部剖面示意BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart of a preferred embodiment of a method of fabricating a light emitting diode of the present invention. Fig. 2 is a schematic view showing the other side of the method shown in Fig. 1 for forming a light-emitting diode. Fig. 3 is a partial cross-sectional view showing the formation of a protective layer in the method of Fig. 1. 4 is a partial cross-sectional view showing the electrode layer formed in the method of FIG.
面示^為® 1所示方法中導電板組裝於電極層之局部刹 示意圖 圖6為圖1所示方法中_並去除襯底後之局部 剖面 意圖。 圖7為圖1所示方法中形成第二電極後之局部剖 面示 圖8為圖1所示方法中去除保護層後之局部剖面示音 201007979 圖 Ο ❹ 圖9為圖+ 之局部剖“意_ 巾於電㈣及導電板上開通槽後 圖1〇為圖1所一 不方法中所提供之基座之局部剖面示意 圖11為圖1戶斤_ 剖面示意圖。_方法中將基座組裝於電極層後之· 圖12為圖1所— 圖。 不方法中打線及密封後之局部剖面示今 圖13為圖12之局部俯視示意圖。 ”==Μ1㈣心敝單刪二極〜 圖15為本發明之發光二極體製造方法之又 例中打線及㈣後之局部剖面示意圖。 隹實施 『主要元件符號說明 圖 發光二極體晶片 間隙 第二 電極層 導電板 通槽 基座 侧壁 透光材料 切割道 電極 1 111 122 14 15 161 襯底 u 123發光二極體晶粒12 保護層 弟一結合層 第二結合層 通孔 17 ' 37導電柱 172' 372 導線 19 正方形 4、411、412、421、422 13 141 151 171 173 18 24 15Fig. 6 is a partial schematic view of the conductive plate assembled to the electrode layer in the method shown in Fig. 1. Fig. 6 is a partial cross-sectional view of the method shown in Fig. 1 after removing the substrate. 7 is a partial cross-sectional view showing the second electrode in the method shown in FIG. 1. FIG. 8 is a partial cross-sectional view showing the removal of the protective layer in the method of FIG. 1 201007979. FIG. 9 is a partial cross-section of FIG. _ The towel is electrically connected to the conductive plate (4) and the conductive plate is opened. FIG. 1 is a partial cross-sectional view of the susceptor provided in the method of FIG. 1. FIG. Figure 12 is a view of Fig. 1. Fig. 13 is a partial cross-sectional view of Fig. 12 in a non-method. Fig. 13 is a partial top view of Fig. 12. ”==Μ1(4) 敝 敝 删 〜 〜 〜 图 图A schematic cross-sectional view of a portion of the method for fabricating a light-emitting diode of the present invention in the case of wire bonding and (four).隹Implementation of the main component symbol illustration light-emitting diode wafer gap second electrode layer conductive plate through-groove base sidewall light-transmitting material dicing electrode 1 111 122 14 15 161 substrate u 123 light-emitting diode die 12 protection Layer-bonding layer second bonding layer via hole 17' 37 conductive pillar 172' 372 wire 19 square 4, 411, 412, 421, 422 13 141 151 171 173 18 24 15