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TW200939357A - Manufacturing method of thin film transistor and thin film transistor - Google Patents

Manufacturing method of thin film transistor and thin film transistor Download PDF

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Publication number
TW200939357A
TW200939357A TW097150186A TW97150186A TW200939357A TW 200939357 A TW200939357 A TW 200939357A TW 097150186 A TW097150186 A TW 097150186A TW 97150186 A TW97150186 A TW 97150186A TW 200939357 A TW200939357 A TW 200939357A
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Taiwan
Prior art keywords
film
amorphous
laser
thin film
solid green
Prior art date
Application number
TW097150186A
Other languages
Chinese (zh)
Inventor
Taro Morimura
Toru Kikuchi
Masanori Hashimoto
Shin Asari
Kazuya Saito
Kyuzo Nakamura
Original Assignee
Ulvac Inc
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Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of TW200939357A publication Critical patent/TW200939357A/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

A manufacturing method of thin film transistor which can raise mobility while preventing unevenness in transistor characteristics among elements and which is excellent in productivity, and a thin film transistor are provided. The manufacturing method of thin film transistor of the present invention uses a source electrode film (71) and a drain electrode film (72) as a mask and irradiates the channel portion (41) of an amorphous silicon film (4) with a solid green laser (GL) so as to raise the mobility of carriers. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of solid green laser, as compared with a conventional method using an excimer laser, the laser oscillation characteristic is stabilized to make it possible to irradiate a large substrate with a uniform output characteristic in the plane, so that the unevenness in the degree of crystallinity of channel portions among elements can be prevented. Moreover, since the maintenance cycle of the laser oscillator becomes longer, the down time cost of device can be reduced, and the productivity can be improved.

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200939357 六、發明說明： 【發明所屬之技術領域】 本發明係關於載子移動率（carrier mobility)高的非 晶石夕型（amorphous silicon type)薄膜電晶體之製造方法 及薄膜電晶體。 【先前技術】 近年來’主動矩陣型的液晶顯示器受到廣泛使用。主 動矩陣型液晶顯示器中，各個晝素都具有作為開關元件 ❹ ❹ (switching element)之薄膜電晶體（TFT)。 薄膜電晶體除了主動層（active iayer)由多晶石夕構成 之夕日日矽型薄膜電晶體之外，已知還有主動層由非晶矽構 成之非，型薄膜電晶體(參照專利文獻1)。 夕里薄膜電晶體與多晶矽型薄膜電晶體相比，因 二層之製作較容易，所以具有可在比較大面積的基板 均勻成膜之優點 ^ 薄膜雷曰駚4 ·’不過’非晶梦型薄膜電晶體與多晶石夕型 π狀电日日體相比，丄 高精細&於載子的移動率較低，所以要製作更 窃恨困難。 另一方面，Ρ 於源極電極與知有利用雷射退火（laser anneal)使位 使載子的移動逢極電極間之主動層的通道部結晶化，藉以 有使用KrF準2提尚之技術。例如，專利文獻1中就揭示 動率提高之半^子雷射（波長248 nm)使主動層改質而使移 專利文IU體裝置之製造方法。 [〇11〇]) 日本特開平10-56180號公報（段落 320882 4 200939357 【發明内容】 (發明所欲解決之課題） 然而，由於準分子雷射利用的是活性氣體（稀有氣體、 鹵素氣體等之混合氣體）的放電，所以雷射輪出不穩定，並 不適合對大面積基板進行一樣之雷射照射。因此，具有容 易引起元件間因通道部的結晶度不同而造成的電晶體特= 的不一致之問題。 此外，準分子雷射由於活性氣體會造成雷射振盪管或 ©光學零件損傷及活性氣體的純度會劣化，因此零件的交換 頻率會比固體介質雷射高。因而，有裝置的停機成本（(1娜 time cost)及維護成本（running cost)增大，難以使生產 性提高之問題。 鑑於以上之問題，本發明因而以提供可防止元件間之 電晶體特性的不-致而提高移動率之生產性優異的非晶石夕 型薄臈電晶體之製造方法及薄膜電晶體為目的。 ❹（解決課題之手段） 本發明之一形態的薄膜電晶體之製造方法，係包含如 下步驟：在閘極電極膜上形成絕緣膜；在前述絕緣膜上形 成非晶矽膜；在前述非晶矽膜上形成被分離成源極側與汲 極侧之歐姆接觸層（ohmic contact layer)，在前述歐姆接 觸層上形成源極電極膜及汲極電極膜；以及以前述源極電 極膜及刚述及極電極膜作為遮罩對前述非晶石夕膜照射固體 綠光雷射。 本發明之-形_的薄膜電晶體’係具備有：閘極電極 5 320882 200939357 膜、絕緣膜、非晶石夕膜、歐姆接觸層、源極 電極膜、以及通道部。 嚷極m、汲極 前述絕緣膜係形成在前述閘極電極膜上。 =形成在别述絕緣膜上。前述歐姆接觸層係形^在= 曰曰賴上，且被分離成源極及汲極。前 别处 前述沒極電極膜係形成在前述歐姆接觸層上。、=極膜及 具有微結晶構造，係對位於前述雜電極=== 極膜之間之前述非晶發膜照射固體綠光雷射而形^及極電 【貫施方式】 本發明之一實施形態的薄膜電晶體之製造方法，係包 t二I:?:在閑極電極膜上形成絕緣膜;在前述絕緣膜 形成非曰曰石夕膜；在前述非晶石夕膜上形成被分離成源極側 與汲極側之歐姆接觸層，在前述歐姆接觸層上形成源極電 極膜及沒極電極膜；以及以前述源極電極膜及前述i及極電 極膜作為遮罩對前述非晶矽膜照射固體綠光雷射。 ❹ 固體綠光雷射，係以例如532 nm為中心波長之綠色波 長帶域的雷射光，可使1064 nm之固體雷射介質（Nd_YAG/ YV〇4)振盪而取其二次諧波。藉由使此固體綠光雷射照射至 非曰a梦膜，而使照.射區域微結晶化。由於固體綠光雷射的 照射區域，係相當於位在源極電極膜與汲極電極膜之間之 非晶矽膜的通道部，因此可藉由該通道部之微結晶化而提 尚载子之移動率。 根據上述薄膜電晶體之製造方法，藉由固體綠光雷射 之照射使非晶石夕膜的通道部微結晶化，因此與過去之使用 320882 6 200939357 準分子雷射的方法相比，可使雷射振I特性穩定化。藉此， 可對大型基板以在整個面内都一樣的輸出特换進行雷射照 射，可防止元件間之通道部的結晶度之不一致。另外，因 為雷射振盪器的維護周期變長，所以可降低第置的停機成 本，提高生產性。 固體綠光雷射可為連續雷射，亦可為脈衝雷射。源極 電極膜及汲極電極膜具有作為雷射遮罩之機鹓。因此，可 藉由固體綠光雷射之點狀照射或掃描照射而遽擇性地只使 ©非晶矽臈的通道部退火。 固體綠光雷射的照射功率，可依照被要求的載子移動 率、作為非晶矽膜的底膜之絕緣膜（閘極絕緣臈）的種類而 適當地調整。例如’絕緣膜為氮化矽膜的情況’使雷射功 率（能量密度）在100 mJ/cm2以上700 mJ/cm2以下，絕緣膜 為氧化碎膜的情況’使雷射功率（能量密度）在100 mJ/cm2 以上700 mj/cm2以下。 ❹ 非晶石夕膜之形成，典型的作法係採用以矽烷（SiH4)為 原料氣體之電漿CVD法（電漿化學氣相沉積法）。使用此種 反應氣體形成非晶矽膜之情況，會有殘存於膜中之氫會對 載子的移動率造成影響之情形。因此，本發明在絕緣膜上 =成非晶矽膜之後，在對非晶矽膜照射固體綠光雷射之 刖，以兩溫對非晶矽膜進行熱處理。藉此，可去除非晶矽 =中的多餘的氫。熱處理的環境係採用減壓下的氮氣環 境，且使熱處理溫度在400°C以上。 另外，在非晶矽膜之雷射改質之後，在減壓之氫氣環 320882 7 200939357 境中對該非晶♦膜進行熱處理，可藉此消滅由於· 而增加之非晶矽膜中的懸鍵（dangHng b〇nd :夫^射照射 而更加提昇電晶體特性。熱處理溫度越高溫越好：=鍵）， 此外，本發明之—實施形態的薄膜電晶體， 閘極電極膜、絕緣膜、非晶石夕膜、歐姆接觸層、備有 膜、汲極電極膜、以及通道部。 曰碌極電^ 前述絕緣膜係形成在前述閘極電極膜上。此 ©膜係形成在前述絕緣膜上。前述歐姆接觸層係=非晶; ΐ晶石夕膜上，且被分離成源極及祕。前述源極電 别述沒極電極膜係形成在前紐姆接觸層上。前述1 :有微結晶構造’係對位於前述源極電極膜及前述‘: 膜之間之前料㈣膜難㈣綠⑼射而形成。5 以下，根據圖式說明本發明之各實施形態。 第1圖（Α)至⑻係說赌據本發明實施形態之非晶石 ❹型薄膜電晶體之製造方法之各韓的主要部份之斷面圖。’ 首先，如第1圖（Α)所示，在基板丨的表面形成閘極$ 極膜2 〇 基板1係絕緣基板，典型的例子為破璃基板。閘極電 極膜2係以例如翻、絡、銘等之金屬單層膜或金屬多層膜 形成，且係藉由例如濺鍍法而成膜。閘極電極膜2係經利 用光微影（photolithography)技術而圖案化成預定形狀。 閑極電極膜2的厚度為例如1〇〇 nm。 其次，如第1圖（B)所示，在基板1的表面，以被覆閘 320882 8 200939357 極電極膜2的方式形成閘極絕緣膜3。 閘極絕緣膜3係以氮化矽臈（SiNx)或氧化矽膜 等形成’且係藉由例如CVD法而成膜。閘極絕緣膜3的厚 度為例如200 nm至500 nm。 予 接著，如第1圖(C)所示，在閘極絕緣膜3之上形成非 晶矽膜4 〇 非晶矽膜4係相當於電晶體的主動層。非晶石夕膜4係 藉由例如以石夕炫（SiH4)為原料氣體之電聚CVD法而形成' ❹非晶矽膜4的膜厚為例如50 nm至200 nm。 非晶矽膜4形成後’對基板1進行加熱，而實施非晶 石夕膜4之脫氫處理。非晶矽膜4之脫氫處理，係將基板二 裝填到加熱爐内，在減壓下的氮氣環境中，以例如4〇〇t 以上的溫度加熱30分鐘。藉由此脫氫處理，去除在非曰矽 膜4成膜時包含在膜中之多餘的氫。 曰 其次，如第1圖（D)所示’在非晶矽膜4之上，依序疊 ❹層歐姆接觸層5及電極層6。 ^ 歐姆接觸層5係以例如n+型非晶矽之類的低電阻半導 體膜形成，電極層6係以例如鋁之類的金屬膜形成。歐姆 接觸層5係為了提高非晶矽膜4與電極層6之間的歐姆接 觸及密著性而形成。歐姆接觸層5的厚度為例如5〇 nm， 電極層6的厚度為例如500 nm。 接著，如第1圖（E)所示，以讓所要形成的源極及汲極 成為隔著非晶石夕膜4而分離的形態之方式’使歐姆接觸層 5及電極層6圖案化成預定形狀而形成源極及汲極。電^ 320882 9 200939357 層6係被分離形成為源極電極膜71及汲極電極膜72。 藉此，使非晶矽膜4的一部份在源極與汲極之間露出 到外部。另外’與源極及汲極之形成工序外不同地’如圖 所示般使非晶石夕膜4及閘極絕緣膜3圖案化而使元件分 離。圖案化之方法並無特別的限定，可使用例如濕姓刻法， 但使用乾蝕刻法亦可。 其次’如第1圖（F)所示，對位於源極電極膜71與汲 極電極膜72之間之非晶矽膜4的通道部41照射固體綠光 ❹雷射GL 〇 非晶石夕膜4的通道部41係構成：對閘極電極2施加預 定的電壓之際，載子（電子或電洞）在源極與汲極之間移動 之移動區域（通道部）。藉由雷射照射之退火效應，使由非 晶質層構成之通道部41改質成為微細結晶層，結果就如後 述，使得載子的移動率提高。 本實施形態中，固體綠光雷射GL，係使用以532 nm a為中心波長之綠色波長帶域的雷射光，用以振盪出1064 nm 之固體雷射介質（Nd-YAG/YV〇4)的振盪雷射光作為通過KTP (磷酸鈦氧鉀）等之非線性光學晶體的二次諧波。 固體綠光雷射GL可為連續雷射，亦可為脈衝雷射。本 實施形態係使用脈衝雷射，每一脈衝的頻率為4 kHz，掃 描速度為每秒8 mm。源極電極膜71及汲極電極膜72具有 作為雷射遮罩之功能。因此，可藉由固體綠光雷射见之掃 描照射而選擇性地只使非晶矽膜的通道部退火。 固體綠光雷射的照射功率，可依照要求的載子移動 320882 10 200939357 率、作為非晶石夕膜的底膜之絕緣膜（閘極絕緣膜）的種類而 適當地調整。例如，絕緣膜為氣化碎膜的情況，使雷射功 率（能量密度）在1〇〇 mJ/cm2以上7〇〇 mJ/cm2以下’絕緣膜 為氧化石夕膜的情況’使雷射功率（能量密度）在mJ/cm2 以上700 mJ/cm2以下。 依雷射功率而定，有時會有：因雷射照射的損傷使得 非晶矽膜（通道部41)中的懸鍵增加，以致無法大幅提高載 子移動率之情形。因此，本實施形態在通道部41的雷射退 ❹火後，藉由在減壓下的氫氣環境中對基板1進行熱處理， 使非晶矽膜4中的懸鍵與氳結合而使之消滅，以求如後所 述之載子移動率之更加提高ό 根據本實施形態，由於採用固體綠光雷射GL作為非晶 矽膜4之通道部41的改質雷射，因此與過去之使用準分子 雷射之方法相比，可使雷射振盪特性穩定化。藉此，對於 大型基板也能以在整個面内都一樣的輸出特性進行雷射照 ❹射，可防止元件間之通道部的結晶度之不一致。另外，因 為雷射振盪器的維護周期變長，所以可降低裝置的停機成 本，並提高生產性。 接著，說明如以上方式製造之薄膜電晶體的電晶體特 性。 松第2 _、用於實驗之樣本的概略構成圖。圖中，元件 極⑹之縣板，13係作為閑 ^化石夕膜或氣化石夕膜（230 nm)，14係非晶矽膜 ⑽）’15係作為歐姆接觸層之&型非M(5Qnm)， 11 320882 200939357 係作為電極層之銘膜，⑴分別為將電極層 而形成之源極電極膜及汲極電極膜。 案化 實驗中，首先係對位於源極電極膜s鱼沒 之間之非晶石夕膜Η的區域（通道部）照射固體綠 、 次在氬氣環境下以侧。C實施3〇分鐘的.熱處理（退火）j 確認此餘壤境下之熱處理（退火），係越以高溫進 越能得到南移動率的改善效果。較佳的熱處理溫度彻 °G以上。 ❹ 對於固體綠光雷射的雷射功率、與源極_汲極間 移動率之關係加以調查所得到的結果顯示於第3及第4圖 中。第3圖係顯示以氮化石夕膜構成閘極絕緣膜13之樣本的 例子，第4圖係顯示以氧化梦膜構成閘極絕緣膜！ 3之樣本 的例子。 niJ/c® 值。此 在第3圖所示的例子中’移動率從雷射功率超過_ l2之處開始徐徐升高’而後在57() 附延到達峰 雷射功率的 值。此-姑果可想成係因為：藉由雷射退火將通道部從非 0晶質構造改質為微結晶構造’使通道部低電阻化的緣故。 不過，當雷射功率超過570 mJ/cm2時則移動率有降低的傾 向。其廣因<想成係因為通道部的結晶度之變異或溶融等 1 緣故。從此實驗結果可知：可得到2 cmVvs的移動率之 ’ ’ 的範圍在530 mJ/cm2以上610 mJ/cm2以下。 另〆方面，在第4圖所示的例子中，隨著雷射功率增 耖動率亦升尚，而後在490 mJ/cm2到達峰值。不過， 加’功率/超過490 mJ/cm2，移動率就急遽降低。從此實 雷射 320&S2 12 200939357 驗結果可知：可得到2 cm2/Vs的移動率之雷射功率的範圍 在 320 mJ/cm2 以上 530 mJ/cm2 以下。 移動率之變化，係隨著雷射的節距（pitchy、非晶矽膜 U的厚度或成膜條件、絕緣膜的種類或成膜條件等條件而 不同。根據本案各發明人所作的實驗，可得到2 Cm2/Vs以 上的移動率之雷射功率，係依上述條件之不同而在 cm2以上700 mJ/cm2以下之間變化。因此，可依據條件而在 此範圍内選擇適當的雷射功率。 以上’雖已就本發明的實施形態進行了說明，惟毋庸 说，本發明並不只限於上述的實施形態，還可加上在不脫 離本發明的要旨之範圍内的各種變化❶ 例如在以上的實施形態中，雖已在對非晶矽膜4(通道 部41)之雷射退火方面舉固體綠光雷射之掃描照射為例進 行說明，但不限於此，利用對著通道部41之固體綠光雷射 的點狀照射，亦可得到與上述一樣的效果。 【圖式簡單說明】 第1圖（A)至（F)係說明根據本發明實施形態之薄膜電 晶體之製造方法之各工序的主要部份之斷面圖。 第2圖係顯示本發明之實施形態中說明之實驗例的樣 本構成之概略圖。 第3圖係顯示本發明之實施形態中說明之一實驗結 果’亦即閘極絕緣膜為氮化矽膜時之雷射退火工序中雷射 功率與載子移動率的關係之圖。 第4圖係顯示本發明之實施形態中說明之一實驗結 320882 13 200939357 果，亦即閘極絕緣膜為氧化矽膜時之雷射退火工序中雷射 功率與載子移動率的關係之圖。 【主要元件符號說明】 1 基板 2 > 12 閘極電極膜 3 ' 13 閘極絕緣膜 4 ' 14 非晶矽膜 ^ 5 ' 15 歐姆接觸層 6、16 電極層 41 通道部 7卜S 源極電極膜 72、D 汲極電極膜 GL 固體綠光雷射 ❹ 14 320882BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing an amorphous silicon type thin film transistor having a high carrier mobility and a thin film transistor. [Prior Art] In recent years, an active matrix type liquid crystal display has been widely used. In the active matrix type liquid crystal display, each element has a thin film transistor (TFT) as a switching element switch switch (switching element). In addition to the thin-film transistor, in addition to the active iayer, which is composed of a polycrystalline stone, it is known that the active layer is made of amorphous germanium (see Patent Document 1). ). Compared with the polycrystalline germanium type thin film transistor, the thin film transistor has the advantage of making the second layer easier to fabricate, so it has the advantage of uniform film formation on a relatively large area of the substrate. ^Thick film 4 · 'but 'amorphous dream film Compared with the polycrystalline sinusoidal π-shaped electric solar corona, the crystal has a lower mobility and lower mobility of the carrier, so it is more difficult to make a hate. On the other hand, the source electrode and the channel portion of the active layer between the moving electrodes of the carrier are crystallized by laser anneal, so that the technique of using KrF quasi 2 is used. For example, Patent Document 1 discloses a method in which a half-subfield laser (wavelength 248 nm) with an increased mobility is used to modify an active layer to move a patent device. [〇11〇]) Japanese Laid-Open Patent Publication No. Hei 10-56180 (paragraph 320882 4 200939357) [Problems to be Solved by the Invention] However, excimer lasers use active gases (rare gases, halogen gases, etc.) The discharge of the mixed gas) is unstable, so it is not suitable for the same laser irradiation on a large-area substrate. Therefore, it is easy to cause a transistor characteristic due to the difference in crystallinity between the elements due to the channel portion. Inconsistent problems. In addition, excimer lasers may cause damage to the laser oscillating tube or © optical parts due to reactive gases, and the purity of the reactive gas may deteriorate. Therefore, the frequency of exchange of parts will be higher than that of solid medium. The cost of downtime (the cost of maintenance and the maintenance cost) is increased, and it is difficult to improve the productivity. In view of the above problems, the present invention thus provides for preventing the crystal characteristics between components from being uninduced. A method for producing an amorphous austenitic thin tantalum transistor and a thin film transistor which are excellent in productivity and improved productivity. The method for producing a thin film transistor according to one aspect of the present invention includes the steps of: forming an insulating film on a gate electrode film; forming an amorphous germanium film on the insulating film; and forming an amorphous germanium film on the amorphous germanium film Separating into an ohmic contact layer on the source side and the drain side, forming a source electrode film and a drain electrode film on the ohmic contact layer; and using the source electrode film and the electrode film just described The solid amorphous green laser is irradiated to the amorphous film as a mask. The thin film transistor of the present invention is provided with: a gate electrode 5 320882 200939357 film, an insulating film, an amorphous film, an ohm a contact layer, a source electrode film, and a channel portion. The drain electrode m and the drain electrode are formed on the gate electrode film. = formed on an insulating film. The ohmic contact layer is formed at = 曰It is separated and separated into a source and a drain. The foregoing electrodeless electrode film is formed on the ohmic contact layer, and the electrode film has a microcrystalline structure, and the pair is located at the aforementioned impurity electrode === The aforementioned amorphous hair between the films The method of manufacturing a thin film transistor according to an embodiment of the present invention is a method of manufacturing a thin film transistor according to an embodiment of the present invention, and forming an insulating film on the idle electrode film; Forming a non-mite film on the insulating film; forming an ohmic contact layer separated into a source side and a drain side on the amorphous thin film, forming a source electrode film and a gate on the ohmic contact layer And the solid green laser is irradiated to the amorphous germanium film by using the source electrode film and the i and the electrode film as a mask. 固体 The solid green laser is green with a center wavelength of, for example, 532 nm. The laser light in the wavelength band can oscillate the 1064 nm solid laser medium (Nd_YAG/YV〇4) to take the second harmonic. By irradiating the solid green laser light to the non-曰a dream film, the irradiation region is microcrystallized. Since the irradiation region of the solid green laser is equivalent to the channel portion of the amorphous germanium film between the source electrode film and the drain electrode film, it can be carried out by microcrystallization of the channel portion. Sub-movement rate. According to the method for producing a thin film transistor described above, the channel portion of the amorphous austenite film is microcrystallized by irradiation with a solid green laser, and thus can be compared with the conventional method of using 320882 6 200939357 excimer laser. The laser vibration I characteristic is stabilized. Thereby, it is possible to perform laser irradiation on the large substrate with the same output switching over the entire surface, and it is possible to prevent the crystallinity of the channel portion between the elements from being inconsistent. In addition, since the maintenance period of the laser oscillator is long, the first shutdown cost can be reduced and productivity can be improved. The solid green laser can be a continuous laser or a pulsed laser. The source electrode film and the drain electrode film have a mechanism as a laser mask. Therefore, only the channel portion of the amorphous germanium can be annealed by spot illumination or scanning irradiation of a solid green laser. The irradiation power of the solid green laser beam can be appropriately adjusted in accordance with the required carrier mobility and the type of the insulating film (gate insulator) of the underlying film of the amorphous germanium film. For example, 'in the case where the insulating film is a tantalum nitride film', the laser power (energy density) is 100 mJ/cm2 or more and 700 mJ/cm2 or less, and the insulating film is an oxidized film. 100 mJ/cm2 or more and 700 mj/cm2 or less.形成 Formation of amorphous austenite film, a typical method is plasma CVD (plasma chemical vapor deposition) using decane (SiH4) as a raw material gas. When such an reaction gas is used to form an amorphous tantalum film, hydrogen remaining in the film may affect the mobility of the carrier. Therefore, in the present invention, after the amorphous germanium film is formed on the insulating film, the amorphous germanium film is irradiated with a solid green laser, and the amorphous germanium film is heat-treated at two temperatures. Thereby, excess hydrogen in the amorphous 矽 = can be removed. The heat treatment environment is a nitrogen atmosphere under reduced pressure, and the heat treatment temperature is 400 ° C or higher. In addition, after the laser modification of the amorphous germanium film, the amorphous film is heat-treated in the decompressed hydrogen ring 320882 7 200939357, thereby eliminating the dangling bond in the amorphous germanium film which is increased by (dangHng b〇nd: The radiation characteristics are further improved by the irradiation of the lens. The higher the heat treatment temperature, the better the temperature: = key), and the thin film transistor, the gate electrode film, the insulating film, and the non-embodiment of the present invention. A crystal film, an ohmic contact layer, a film, a gate electrode film, and a channel portion. The above-mentioned insulating film is formed on the gate electrode film. This © film is formed on the aforementioned insulating film. The aforementioned ohmic contact layer is amorphous; on the twin crystal, and separated into a source and a secret. The source electrode described above is formed on the front neon contact layer. The first one has a microcrystalline structure in which the film is located between the source electrode film and the front surface of the film: (4) and the film is hard (four) green (9). 5 Hereinafter, each embodiment of the present invention will be described based on the drawings. Figs. 1(Α) to (8) are cross-sectional views showing main parts of each of the Koreans of the method for producing an amorphous iridium-type thin film transistor according to an embodiment of the present invention. First, as shown in Fig. 1 (Α), a gate electrode film 2 is formed on the surface of the substrate 〇. The substrate 1 is an insulating substrate, and a typical example is a glass substrate. The gate electrode film 2 is formed of a metal single layer film or a metal multilayer film such as a turn, a lap, or the like, and is formed by, for example, sputtering. The gate electrode film 2 is patterned into a predetermined shape by photolithography. The thickness of the pad electrode film 2 is, for example, 1 〇〇 nm. Next, as shown in Fig. 1(B), the gate insulating film 3 is formed on the surface of the substrate 1 so as to cover the electrode film 2 of the gate 320882 8 200939357. The gate insulating film 3 is formed of tantalum nitride (SiNx) or a hafnium oxide film, and is formed by, for example, a CVD method. The thickness of the gate insulating film 3 is, for example, 200 nm to 500 nm. Next, as shown in Fig. 1(C), an amorphous germanium film 4 is formed on the gate insulating film 3. The amorphous germanium film 4 corresponds to the active layer of the transistor. The amorphous austenite film 4 is formed by, for example, an electropolymerization CVD method using Shih Hyun (SiH4) as a raw material gas, and the film thickness of the amorphous germanium film 4 is, for example, 50 nm to 200 nm. After the amorphous germanium film 4 is formed, the substrate 1 is heated, and the dehydrogenation treatment of the amorphous quartz film 4 is performed. The dehydrogenation treatment of the amorphous ruthenium film 4 is carried out by charging the substrate 2 into a heating furnace, and heating at a temperature of, for example, 4 Torr or more in a nitrogen atmosphere under reduced pressure for 30 minutes. By this dehydrogenation treatment, excess hydrogen contained in the film at the time of film formation of the non-ruthenium film 4 is removed. Next, as shown in Fig. 1(D), the ohmic contact layer 5 and the electrode layer 6 are sequentially stacked on the amorphous germanium film 4. The ohmic contact layer 5 is formed of a low-resistance semiconductor film such as an n+-type amorphous germanium, and the electrode layer 6 is formed of a metal film such as aluminum. The ohmic contact layer 5 is formed in order to improve ohmic contact and adhesion between the amorphous germanium film 4 and the electrode layer 6. The thickness of the ohmic contact layer 5 is, for example, 5 〇 nm, and the thickness of the electrode layer 6 is, for example, 500 nm. Next, as shown in FIG. 1(E), the ohmic contact layer 5 and the electrode layer 6 are patterned into a predetermined pattern in such a manner that the source and the drain to be formed are separated by the amorphous film 4. The shape forms the source and the bungee. Electric ^ 320882 9 200939357 The layer 6 is separated into a source electrode film 71 and a drain electrode film 72. Thereby, a part of the amorphous germanium film 4 is exposed to the outside between the source and the drain. Further, the amorphous quartz film 4 and the gate insulating film 3 are patterned to separate the elements as shown in the steps of forming the source and the drain. The method of patterning is not particularly limited, and for example, a wet etching method can be used, but a dry etching method can also be used. Next, as shown in FIG. 1(F), the channel portion 41 of the amorphous germanium film 4 located between the source electrode film 71 and the gate electrode film 72 is irradiated with a solid green light ❹ laser GL 〇 amorphous stone. The channel portion 41 of the film 4 is a moving region (channel portion) in which a carrier (electron or hole) moves between the source and the drain when a predetermined voltage is applied to the gate electrode 2. The channel portion 41 composed of the non-crystalline layer is reformed into a fine crystal layer by the annealing effect of the laser irradiation, and as a result, the mobility of the carrier is improved as will be described later. In the present embodiment, the solid green laser GL uses laser light of a green wavelength band with a center wavelength of 532 nm a to oscillate a solid laser medium of 1064 nm (Nd-YAG/YV〇4). The oscillating laser light acts as the second harmonic of a nonlinear optical crystal that passes through KTP (potassium titanyl phosphate). The solid green laser GL can be a continuous laser or a pulsed laser. This embodiment uses a pulsed laser with a frequency of 4 kHz per pulse and a scanning speed of 8 mm per second. The source electrode film 71 and the gate electrode film 72 have a function as a laser mask. Therefore, only the channel portion of the amorphous germanium film can be selectively annealed by scanning irradiation by a solid green laser. The irradiation power of the solid green laser beam can be appropriately adjusted in accordance with the type of carrier movement 320882 10 200939357 and the type of the insulating film (gate insulating film) of the base film of the amorphous stone film. For example, when the insulating film is a vaporized chip, the laser power (energy density) is 1 〇〇mJ/cm 2 or more and 7 〇〇 mJ/cm 2 or less 'in the case where the insulating film is an oxidized stone film'. (Energy density) is mJ/cm2 or more and 700 mJ/cm2 or less. Depending on the laser power, there are cases where the dangling bonds in the amorphous ruthenium film (channel portion 41) are increased due to the damage of the laser irradiation, so that the carrier mobility cannot be greatly improved. Therefore, in the present embodiment, after the laser beam is deboned by the tunnel portion 41, the substrate 1 is heat-treated in a hydrogen atmosphere under reduced pressure, and the dangling bonds in the amorphous germanium film 4 are bonded to the crucible to be eliminated. In order to further improve the carrier mobility as described later, according to the present embodiment, since the solid green laser GL is used as the modified laser of the channel portion 41 of the amorphous germanium film 4, it is used in the past. Compared to the method of excimer laser, the laser oscillation characteristics can be stabilized. Thereby, it is possible to perform laser irradiation with the same output characteristics over the entire surface of the large substrate, and it is possible to prevent the crystallinity of the channel portion between the elements from being inconsistent. In addition, since the maintenance period of the laser oscillator is long, the shutdown cost of the device can be reduced, and productivity can be improved. Next, the transistor characteristics of the thin film transistor manufactured as described above will be described. Matsu 2nd _, a schematic diagram of the sample used for the experiment. In the figure, the element plate of the element pole (6), the 13 series is used as the tempering layer or the gasification stone film (230 nm), and the 14-type amorphous yttrium film (10)) '15 series as the ohmic contact layer & type non-M ( 5Qnm), 11 320882 200939357 is used as an electrode film of the electrode layer, and (1) is a source electrode film and a gate electrode film which are formed by electrode layers, respectively. In the case of the experiment, first, the region (channel portion) of the amorphous austenite film located between the source electrode film and the fish was irradiated with solid green, and the side under the argon atmosphere. C is subjected to heat treatment (annealing) for 3 minutes. j The heat treatment (annealing) in the remaining soil is confirmed, and the improvement of the south mobility rate can be obtained by the higher temperature. The preferred heat treatment temperature is above °G. ❹ The results obtained by investigating the relationship between the laser power of the solid green laser and the source-bend mobility are shown in Figures 3 and 4. Fig. 3 shows an example in which a sample of the gate insulating film 13 is formed by a nitride film, and Fig. 4 shows a gate insulating film formed by an oxide film! An example of a sample of 3. niJ/c® value. In the example shown in Fig. 3, the 'movement rate rises gradually from the point where the laser power exceeds _l2' and then reaches the value of the peak laser power at 57(). This is a reason why the channel portion is changed from a non-zero crystal structure to a microcrystalline structure by laser annealing to reduce the resistance of the channel portion. However, when the laser power exceeds 570 mJ/cm2, the mobility is lowered. The reason for this is because the crystallinity of the channel portion is mutated or melted. From the results of this experiment, it is understood that the range of the mobility of 2 cmVvs is 530 mJ/cm2 or more and 610 mJ/cm2 or less. On the other hand, in the example shown in Fig. 4, as the laser power increases, the yaw rate also rises, and then reaches a peak at 490 mJ/cm2. However, with the addition of power / over 490 mJ/cm2, the mobility rate is drastically reduced. From this test, 320 & S2 12 200939357 results show that the laser power with a mobility of 2 cm2/Vs can range from 320 mJ/cm2 to 530 mJ/cm2. The change in the mobility varies depending on the pitch of the laser (pitchy, the thickness of the amorphous ruthenium film U or the film formation conditions, the type of the insulating film, or the film formation conditions, etc. According to experiments conducted by the inventors of the present invention, The laser power with a mobility of 2 Cm2/Vs or more can be varied between cm2 and 700 mJ/cm2 depending on the above conditions. Therefore, the appropriate laser power can be selected within this range depending on the conditions. The above description has been made with respect to the embodiments of the present invention, and the present invention is not limited to the above-described embodiments, and various modifications may be added without departing from the gist of the present invention. In the embodiment, the scanning irradiation of the solid green laser is performed on the laser annealing of the amorphous germanium film 4 (channel portion 41). However, the present invention is not limited thereto, and the channel portion 41 is used. The point-like illumination of the solid green laser can also obtain the same effect as described above. [Simplified illustration of the drawings] Figs. 1(A) to (F) are views showing a method of manufacturing a thin film transistor according to an embodiment of the present invention. For each process Fig. 2 is a schematic view showing a sample configuration of an experimental example described in the embodiment of the present invention. Fig. 3 is a view showing one of the experimental results in the embodiment of the present invention. A diagram showing the relationship between the laser power and the carrier mobility in the laser annealing process when the pole insulating film is a tantalum nitride film. Fig. 4 is a view showing an experimental knot 320882 13 200939357 in the embodiment of the present invention. That is, the relationship between the laser power and the carrier mobility in the laser annealing process when the gate insulating film is a ruthenium oxide film. [Major component symbol description] 1 substrate 2 > 12 gate electrode film 3 ' 13 gate Insulating film 4 ' 14 amorphous ^ film ^ 5 ' 15 ohm contact layer 6, 16 electrode layer 41 channel portion 7 s S source electrode film 72, D 电极 electrode film GL solid green laser ❹ 14 320882

Claims (1)

200939357 七、申請專利範圍： 1. 一種薄膜電晶體之製造方法，係包含如下步驟： 在閘極電極膜上形成絕緣膜； 在前述絕緣膜上形成非晶矽膜； 在刚述非晶發膜上形成被分離成源極侧與沒極侧 之歐姆接觸層及在前述歐姆接觸層上形成源極電極填 及汲極電極膜；以及 以前述源極電極膜及前述及極電極膜作為遮罩鮮 © 前述非晶矽膜照射固體綠光雷射。 2. 如申請專利範圍第1項之薄膜電晶體之製造方法，其 中， 形成刖述絕緣膜之步驟，係形成作為前述絕緣膜之 氮化矽膜， 照射前述固體綠光雷射之步驟，係照射能量密度為 100 mJ/cm2到700 mJ/cm2之前述固體綠光雷射。 3·如申請專利範圍第1項之薄膜電晶體之製造方法，其 中， " 形成前述絕緣膜之步驟，係形成作為前述絕緣膜之 氧化矽膜， 照射則述固體綠光雷射之步驟，係照射能量密度為 100 mJ/cm2到700 mJ/cm2之前述固體綠光雷射。 4·如申請專利範圍第1項之薄膜電晶體之製造方法，其 中，在前述絕緣膜上形成前述非晶矽膜後，對前述非晶 矽膜照射前述固體綠光雷射之前，對前述非晶矽膜進行 320882 15 200939357 熱處理。 5. 如申請專利範圍第1項之薄膜電晶體之製造方法，其 中，在對前述非晶矽膜照射前述固體綠光雷射之後，在 氫氣環境下對前述非晶矽膜進行熱處理。 6. —種薄膜電晶體，具備有： 閘極電極膜； 形成於前述閘極電極膜上之絕緣膜； 形成於前述絕緣膜上之非晶矽膜； 〇 形成於前述非晶矽膜上，且被分離成源極及汲極乙 歐姆接觸層； 形成於前述歐姆接觸層上之源極電極膜及汲極t 極膜；以及 對位於前述源極電極膜及前述汲極電極膜之間乙 前述非晶矽膜照射固體綠光雷射而形成之微結晶構查 的通道部。 16 320882200939357 VII. Patent application scope: 1. A method for manufacturing a thin film transistor, comprising the steps of: forming an insulating film on a gate electrode film; forming an amorphous germanium film on the insulating film; Forming an ohmic contact layer separated into a source side and a non-polar side, and forming a source electrode filling and a drain electrode film on the ohmic contact layer; and using the source electrode film and the front electrode film as a mask Fresh © The amorphous ruthenium film irradiates a solid green laser. 2. The method for producing a thin film transistor according to the first aspect of the invention, wherein the step of forming the insulating film is a step of forming a tantalum nitride film as the insulating film and irradiating the solid green laser. The aforementioned solid green laser is irradiated with an energy density of 100 mJ/cm 2 to 700 mJ/cm 2 . 3. The method for producing a thin film transistor according to the first aspect of the invention, wherein the step of forming the insulating film is a step of forming a ruthenium oxide film as the insulating film, and irradiating the solid green laser. The aforementioned solid green laser is irradiated with an energy density of 100 mJ/cm 2 to 700 mJ/cm 2 . 4. The method for producing a thin film transistor according to the first aspect of the invention, wherein the amorphous ruthenium film is formed on the insulating film, and the amorphous ruthenium film is irradiated with the solid green laser before the non- The wafer film was subjected to heat treatment at 320882 15 200939357. 5. The method of producing a thin film transistor according to claim 1, wherein the amorphous ruthenium film is subjected to heat treatment in a hydrogen atmosphere after irradiating the amorphous ruthenium film with the solid green laser. 6. A thin film transistor comprising: a gate electrode film; an insulating film formed on the gate electrode film; an amorphous germanium film formed on the insulating film; and germanium formed on the amorphous germanium film And being separated into a source and a drain E-ohmic contact layer; a source electrode film and a drain electrode film formed on the ohmic contact layer; and a pair between the source electrode film and the drain electrode film The amorphous iridium film is irradiated with a solid green laser to form a channel portion of the microcrystal structure. 16 320882
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