200927375 九、發明說明： 【發明所屬之技術領域】 本發明係關於化學機械平坦化（CMP)之領域，更具體言 之，係關於一種減小缺陷之CMP塾。 本申請案主張2007年8月28日申請的美國專利申請案第 - 11/846,304號之優先權。 - 【先前技術】 在現代積體電路（1C)製造中，將材料層施加至在半導體 ® 晶圓上形成的欲入式結構。化學機械平坦化（CMP)係一種 用於移除此等層並拋光晶圓表面的研磨製程。CMP可在氧 化物與金屬兩者上執行’且其通常包括結合相對於晶圓移 動的拋光墊（例如，該墊通常相對於該晶圓作旋轉運動）使 用化學漿液。所得的平滑、平坦表面需維持微影焦點深 度，以供後續晶圓處理步驟用並確保金屬互連在順應共形 (contour)步驟中不變形。鑲嵌處理需要使用CMP從介電質 之頂部表面移除諸如鎮或銅之金屬以界定互連結構。 鲁 拋光墊通常係由胺基曱酸酯類製成，呈填充有微孔元件 的鑄件形式或由塗佈有聚胺基甲酸酯的不織氈製成。在使 - 用中’該墊邊旋轉邊與該晶圓接觸，該晶圓亦旋轉，因此 . 實現拋光。通常’使用兩種類型的抛光塾：硬抛光塾與軟 拋光墊。硬墊通常係用於需要在晶圓表面上之微型特徵之 平坦化之應用’而軟墊係用於不需要平坦化之應用。舉例 而言’軟墊可用於多步驟拋光製程，其中首先使用硬墊拋 光晶圓以將表面平坦化，接著使用軟墊拋光以產生平滑成 134109.doc 200927375 品。硬墊通常會產生諸如微擦痕之表面缺陷，且對於達成 漿液粒子之移除沒有效率。因此，使用軟墊於拋光晶圓之 表面以使該等微擦痕變平滑並實現粒子缺陷之更有效率的 移除。 【發明内容】 本發明之一實施例提供一種具有一或多個抛光元件（例 如’單一拋光表面或多個拋光表面或元件）之拋光墊，該 拋光元件係由一具有固有吸水力之水凝膠材料所製成。該 水凝膠材料可不具有微孔性、具有4-60重量％的吸水能 力、大於1000 psi的濕抗張強度、大於2000 psi的撓曲模 量、及在25-80之間（包括25及80)的濕蕭氏（Shore)D硬度。 在其他實施例中，該水凝膠材料可具有4-60重量％的吸水 能力、1-20體積％之微孔性、20-100微米的微孔、大於 1000 psi的濕抗張強度、大於2000 psi的撓曲模量、及在 25-80之間（包括25及80)的濕蕭氏D硬度。在任一實例中， 該水凝膠材料可由以下成分之一者或組合製成：胺基曱酸 酯、環氧烧、酯、謎、丙稀酸、丙稀酿胺、醯胺、酿亞 胺、乙烯醇、醋酸乙烯酯、丙烯酸酯、甲基丙烯酸酯、 颯、胺基甲酸酯類、氣乙烯、二醚酮及/或碳酸酯。 根據本發明之一實施例，拋光可藉由使一由具有固有吸 水力之材料所構造的拋光塾在存在一拋光組合物之情況下 接近一半導體晶圓，該拋光組合物係設置在該拋光墊與設 置在該晶圓上之一頂層之間’及使該晶圓與該拋光墊相對 於彼此旋轉，以便實現設置在該晶圓上之該頂層（例如， 134109.doc • 6 - 200927375 銅）之部分或全部之移除而達 攻在開始拋光操作之前， 該拋光墊可被浸在溶液（例如， ^ 水、拋光組合物、諸如硫 酸銅之電解溶液等等）中。在佶 使用電解溶液之情形下，該 抛光墊在拋光操作中可耦合至—BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of chemical mechanical planarization (CMP), and more particularly to a CMP defect for reducing defects. The present application claims priority to U.S. Patent Application Serial No. 11/846,304, filed on August 28, 2007. - [Prior Art] In the manufacture of modern integrated circuits (1C), a material layer is applied to an intended structure formed on a semiconductor wafer. Chemical Mechanical Planarization (CMP) is a polishing process used to remove such layers and polish the surface of the wafer. CMP can be performed on both oxide and metal' and it typically involves the use of a chemical slurry in conjunction with a polishing pad that moves relative to the wafer (e.g., the pad typically rotates relative to the wafer). The resulting smooth, flat surface maintains the lithographic focus depth for subsequent wafer processing steps and ensures that the metal interconnect does not deform during the conforming step. The damascene process requires the use of CMP to remove metal such as a town or copper from the top surface of the dielectric to define the interconnect structure. The polishing pad is usually made of an amino phthalate, in the form of a casting filled with a microporous element or made of a non-woven felt coated with a polyurethane. The wafer is rotated while being in use, and the wafer is also rotated, thereby achieving polishing. Usually two types of polished enamel are used: hard polished enamel and soft polishing pad. Hard pads are typically used in applications where planarization of microfeatures on the surface of the wafer is required, while cushioning is used in applications that do not require planarization. For example, a cushion can be used in a multi-step polishing process in which a hard pad polishing wafer is first used to planarize the surface, followed by pad polishing to produce a smooth 134109.doc 200927375 product. Hard mats typically produce surface defects such as micro-scratches and are inefficient for achieving removal of the slurry particles. Thus, a cushion is used to polish the surface of the wafer to smooth the micro-scratches and achieve more efficient removal of particle defects. SUMMARY OF THE INVENTION One embodiment of the present invention provides a polishing pad having one or more polishing elements (eg, a 'single polished surface or a plurality of polished surfaces or elements), the polishing element being formed by a water condensate having inherent water absorption Made of rubber material. The hydrogel material may be non-microporous, have a water absorption capacity of 4-60% by weight, a wet tensile strength greater than 1000 psi, a flexural modulus greater than 2000 psi, and between 25-80 (including 25 and 80) Shore D hardness. In other embodiments, the hydrogel material can have a water absorption capacity of 4 to 60% by weight, a microporosity of 1 to 20% by volume, a micropore of 20 to 100 microns, a wet tensile strength of more than 1000 psi, and greater than Flexural modulus at 2000 psi and wet Xiao's D hardness between 25 and 80 (including 25 and 80). In either case, the hydrogel material can be made from one or a combination of the following components: amino phthalate, epoxidized, ester, mystery, acrylic acid, acrylamide, decylamine, thiamine , vinyl alcohol, vinyl acetate, acrylate, methacrylate, hydrazine, urethane, ethylene ethylene, diether ketone and/or carbonate. According to an embodiment of the present invention, polishing can be performed by polishing a polishing enamel constructed of a material having intrinsic water absorption in the presence of a polishing composition, the polishing composition being disposed in the polishing a pad is disposed between one of the top layers of the wafer and rotating the wafer and the polishing pad relative to each other to achieve the top layer disposed on the wafer (eg, 134109.doc • 6 - 200927375 copper) The removal of some or all of the polishing pad may be immersed in a solution (e.g., water, polishing composition, electrolytic solution such as copper sulfate, etc.) prior to initiating the polishing operation. In the case of using an electrolytic solution, the polishing pad can be coupled to the polishing operation -
在一些情形下，對該拋光墊（或對其拋光表面）施加-陽 極電流’同時藉由外部構件提供—陰極偏壓，且使該半導 體晶圓壓向該拋光表面。在其他情形下，對該拋光墊或表 面施加陰極電流’同時藉由外部構件提供—陽極偏壓，且 使該半導體晶圓壓向該拋光表面。 具有-由具有时吸水力之材料所構造之㈣表面的抛 光墊可使用下列方法之一製造：注射模製、擠壓、反應注 射模製或燒結。在此製造期間’可於拋光墊之拋光表面上 形成表面特徵。 【實施方式】 在此描述一種具有減少缺陷之拋光墊，使用此種墊之方 法’及有用於製作具有減少缺陷之CMP拋光塾之材料。如 上所示，CMP包括藉由將一拋光墊壓向晶圓並在存在一拋 光組合物（例如’一漿液）之情況下使此等元件相對於彼此 旋轉來自晶圓之表面移除薄膜。在拋光製程中，在晶圓與 墊之間形成一漿液層’因此形成一水力邊界層。在拋光期 間在墊與晶圓之間維持一均勻的流體層係重要的。在該邊 界層被最小化或完全消除之情形下，墊會直接接觸到晶 圓’造成兩個本體的交互作用而導致更高的缺陷。相反 地，高度潤滑的界面將允許更為均勻的拋光，及使缺陷最 134109.doc 200927375 小化。這在銅CMP，其中被拋光之膜相當軟並可能由於晶 圓-墊之直接接觸而容易地被刮傷之情形下係特別重要。 習知的拋光墊係由聚合物製成，通常為胺基曱酸酯，其 具有在拋光製程期間提供使漿液在晶圓下方分佈之構件的 結構。此等結構包含空隙或微孔，其係藉由添加如在美國 專利第5,578,362號中所述之中空微元件，或經由引進在缚 造製程期間形成的氣泡而包含。美國專利第6,896,593號描 述使用超臨界C02以在模製製程期間形成孔。 一旦該墊層經形成，則其可藉由機械或雷射方式在頂部 表面上進一步加工以增加凹槽。舉例而言，美國專利第 5,489,233號描述使用一不具有吸收或運輸漿液之固有能力 的固態塑膠片，及一具有運輸漿液越過晶圓之流動通道並 實現抛光的表面紋理或圖案。該表面紋理係在該塾上經由 加工被機械產生》 在拋光期間，可使用一精細的經金剛石塗佈的碟片調理 墊以產生微紋理，其產生微凹槽通道而進一步增進在晶圓 下方的漿液分佈。在晶圓拋光製程期間，墊表面亦經歷塑 性變形’其減低漿液分佈，而造成不良的材料移除及移除 均勻度。調理製程移除該塑性變形層並恢復拋光性能。 在習知之墊中，材料本身不具有任何吸收明顯水分或拋 光溶液之固有能力，且諸如微孔、凹槽及微凹槽之外部產 生的結構積極參與漿液分佈。聚液分佈能力不僅對於材料 移除均勻度而言重要，並且對於缺陷而言亦重要。在塾與 晶圓間之漿液分佈不良之情形下，會有在晶圓下方之衆液 134109.doc 200927375 不足區域導致墊-晶圓直接接觸’而造成缺陷的可能性。 在一實施例中’本發明提供一種具有吸收水分或拋光溶 液之固有能力之聚合物拋光墊，且藉此提供一極低缺陷的 抛光表面。本發明之拋光墊可由具有在5_60重量％範圍内 之吸收水或拋光溶液之能力的水凝膠材料製成。吸水能力 係在材料合成期間内控制。具有吸收水分或拋光溶液之固 • 有能力之墊材料將在拋光製程期間提供潤滑表面，並最小 ©化墊-晶圓直接接觸之可能性，且進而消除或最小化缺 陷’特別係刮擦缺陷。製造親水性胺基曱酸酯調配物之方 法描述在美國專利第5,859，166號、第5,763,682號、第 5,424,338 號、第 5,334,691 號、第 5，120,816 號、第 5,118,779號及第4,〇〇8,189號中，將該等案之每一案以引用 的方式併入本文中。 塾材料特性對在晶圓表面上所產生的缺陷起一重要作 用。硬墊通常伴隨較高的缺陷（其實質上為刮擦缺陷），而 〇 較軟的墊通常伴隨較低的缺陷。軟墊之一重要態樣係墊表 面局部仿形以避免在晶圓與墊表面間之「硬接觸」的能 力。局部表面仿形性之另一態樣係墊-晶圓界面維持水性 界面之能力。水性界面提供在晶圓與墊之間的必要潤滑 14因此最小化或消除導致擦痕的可能性。可吸水之聚合 材料提供非常穩定的拋光界面，因此最小化缺陷的可能 性。 美國專利第5,763,682號陳述許多習知的以異氰酸酯為基 礎的發泡體係非親水性（亦即，相對疏水性ρ通常以胺基 134109.doc 200927375 甲酸酯為基礎的發泡體對水性流體呈現排斥作用，其導致 此等發泡體無法吸收或拾取顯著量的水性流體。因此，據 認為通常的聚胺基甲酸酯發泡體不適於提供高度潤滑的拋 光界面。 由於胺基甲酸酯類係由異氰酸酯與多元醇之反應製成， 所以最終聚合物鏈之親水性態樣可透過多元醇之選擇來控 制。美國專利第5,859，166號、第5,763,682號、第 5,424,338 號、第 5,334,691 號、第 5，12〇,816 號、第 5，118,779號及第4,008，189號描述改良胺基甲酸酯組合物之 親水性的方法❶親水性聚胺基曱酸酯可藉由將環氧乙烧單 元與環氧烧單元添加至多元醇分子中而製得。 多元醇之總羥基含量亦係聚胺基甲酸酯之親水性的一重 要因素。在此特殊技術中已知為於發泡體中獲致令人滿意 的親水特性’所使用的多羥醇-環氧烷加成反應物必須在 分子中包含特定比例的環氧乙烷。參見以引用的方式併入 ❿ 本文中之美國專利第3,457,203號。早期的親水性聚胺基甲 酸醋發泡體係從此等加成物製備得，該等加成物係使環氧 乙燒與較高碳環氧烷例如環氧丙烷之混合物與多經醇縮合 之產物。然而，當潮濕時，此等組合物顯現機械特性的劣 - 化。 美國專利第4,008，189號描述藉由使用由三種氧烷基化聚 醚多元醇反應物組成之多元醇混合物而可最小化此種物理 特性劣化之組合物。此等組分之第一者的特徵在於：三羥 基醇核心，經由其一端連接至該核心之聚氧伸乙基鏈段， 134109.doc • 10· 200927375 及經由其一端連接至該聚氧伸乙基鏈段之聚氧伸丙基鏈 段。此種多元醇可藉由技術中熟知之方法製備，其中二諸 如KOH之鹼性催化劑存在下，使三元醇引發劑首先與環氧 乙烷並接著再與環氧丙烷縮合。 預期此等組合物將特別適於拋光應用，因其可實現高度 潤滑的拋光界面。而且，預期交聯聚合物網狀結構將提供 最佳特性，儘管可能使用熱塑性調配物。來自Lubriz〇l公 司的Tecophilic®擠壓模製調配物為一此類材料。此等材料 係經調整至吸收20至100重量％之間的水。吸水程度與機 械特性的損失有關，吸收水的重量百分比越高，則機械強 度的損失越大。因此，使用吸收大約5_2〇重量％水之調配 物將係有利的，儘管可使用高達i 〇〇重量％的吸水性。 圖1A顯示一習知的拋光墊100，例如由R〇hm and ^^3提 供的1C 1000墊之橫截面圖。拋光墊1〇〇包含嵌在可為聚胺 基曱酸醋之聚合基質104中之微元件102。該墊表面包含在 拋光製程期間用於漿液輸送之凹槽1〇6。此等市售之拋光 墊可包含多個表面修飾以影響在墊之表面上的漿液分佈。 圖1B顯示拋光墊1〇8之橫截面圖，該拋光墊1〇8係由 SemiQuest公司製造並描述在2〇〇7年4月ό曰申請之受讓給 本發明之受讓人的美國專利申請案第11/697,622號中，該 案以引用的方式併入本文中。墊1〇8係由安置在一設置在 導引板114下方之可壓縮底部發泡體ι12上之拋光元件 所組成。拋光作用係由該等抛光元件所提供，該等拋光元 件係由固態聚合物材料製成，同時漿液分佈係由該等拋光 134109.doc 200927375 元件之間的敞開空間所達成。該等敞開空間經填充開孔發 泡體。 在本發明之實施例中，上述墊之任一者或兩者之拋光表 面104及/或110可使用親水性聚合物材料製成。舉例而 言，此等拋光表面可由具有在4_60重量％範圍内之吸收水 或拋光溶液之能力的水凝膠材料形成。該水凝膠材料可為 . 以下成分之一者或組合：胺基甲酸酯、環氧烷、酯、醚、 丙烯酸、丙稀醯胺、醯胺、醯亞胺、乙烯醇、醋酸乙烯 S曰、丙稀酸酯、甲基丙稀酸酯、礙、胺基甲酸酯類、氣乙 烯、一醚酮及/或碳酸酯。醯亞胺係由兩個羧酸基或一個 二羧酸鍵結至第一胺或氨所組成的官能基，其通常係從氨 或該第一胺’及該（等）酸或其酸酐直接製備。 在本發明之特殊實施例中，墊之拋光表面可由不具有微 孔性，具有大於1000 psi的濕抗張強度、大於2000 psi的撓 曲模量、及/或在25-80之間（包括25及80)的濕蕭氏D硬度的 ❹ 水凝膠材料製成。在其他情形下，水凝膠材料可具有大約 1-20體積％之微孔性、在大約2〇_1〇〇微米之間的微孔大 於1000 psi的濕抗張強度、大於2〇〇〇 psi的撓曲模量、及在 25·80之間（包括25及80)的濕蕭氏〇硬度。 - 在拋光操作中，使根據本發明之由水凝膠材料所構造之 拋光塾在拋光化合物之存在下與一半導體晶圓（例如，一 具有一或多個設置在其上的薄膜、氧化物及/或金屬層之 晶圓）之一表面接觸，且使該兩者相對於彼此旋轉以實現 設置在該晶圓基板之表面上的一頂層之部分或全部之移 134109.doc -12- 200927375 除。圖2顯示此配置。將拋光墊200固定至轉盤2〇2並使其 接近位在壓盤206上之晶圓204 «將漿液或其他拋光化合物 208引入該拋光塾與該晶圓之間’且使該塾及/或該晶圓相 對於彼此旋轉。 在一些情形下’在拋光墊被用於拋光操作之前，可將其 浸在水或拋光溶液中。舉例而言，該墊可如此浸泡一段時 ' 間（例如’至少10分鐘）以在處理晶圓之前產生穩定的拋光 表面。 此外，可將根據本發明所構造的抛光塾浸在電解溶液中 以產生一傳導性基質及表面。此種電解溶液之一實例係硫 酸銅《此一墊在拋光操作期間可連接至一外部電源。此等 連接可為陽極性，且可藉由外部構件施加陽極或陰極偏 壓。可使以此方式經電解質溶液（例如硫酸銅）飽和且當由 外部構件提供一陰極偏壓時經施加有陽極電流之拋光墊壓 向一具有一頂部傳導層（例如鋼）沈積於其上以填充形成於 〇 底層膜中之結構的半導艎晶圓，而達成該傳導層之移除。 或者，根據本發明所構造並經電解溶液（例如硫酸銅）飽和 之拋光墊可在由外部構件提供一陽極偏壓時，經施加有一 陽極電流可將該墊壓向一具有頂部傳導層（例如銅）沈積 於其上以填充形成於底層膜中之結構的半導體晶圓而影 響該傳導層之沈積。 根據本發明之由水’材料構造㈣光塾可使用注射模 製、擠壓、反應注射模製或燒結來製造。在製程中可將表 面特徵形成在此等塾上。此等特徵有助於在抛光操作中的 134109.doc -13. 200927375 漿液分佈。 因此，已描述具有減少缺陷之拋光墊、製造及使用此等 墊之方法、及有用於製造此等墊之材料。雖然已參考特定 的說明實施例作論述，然而，本發明不應因此被限制，反 之其僅根據以下之請求項被權衡。 【圖式簡單說明】 . 本發明藉由附圖之圖式中的實例作說明，但並不受其所 限制，其中： ® 圖1A說明一習知形式之習知拋光墊，其根據本發明之一 實施例可包含一由具有固有吸水力之水凝膠材料所構造之 拋光表面。 圖1B說明一具有複數個拋光元件之拋光墊，該等拋光元 件中之一或多個係由根據本發明之另一實施例之具有固有 吸水力之水凝膠材料所構造。 圖2說明一種使用一經構形有一拋光表面之拋光墊之方 〇 法，該拋光表面係由根據本發明之具有固有吸水力之水凝 膠材料所製成。 【主要元件符號說明】 100 拋光墊 102 微元件 104 聚合基質 106 凹槽 108 拋光墊 110 拋光元件 134109.doc 200927375 112 底部發泡體 114 導引板 200 拋光墊 202 轉盤 204 晶圓 206 壓盤 208 漿液 ❹ ❹ 134109.doc -15-In some cases, an anode current is applied to the polishing pad (or to its polishing surface) while a cathode bias is provided by the external member and the semiconductor wafer is pressed against the polishing surface. In other cases, a cathode current is applied to the polishing pad or surface while the anode is biased by the external member and the semiconductor wafer is pressed against the polishing surface. A polishing pad having a (four) surface constructed of a material having a time-absorbent force can be produced using one of the following methods: injection molding, extrusion, reactive injection molding, or sintering. During this manufacturing period, surface features can be formed on the polishing surface of the polishing pad. [Embodiment] Here, a polishing pad having a defect reduction, a method of using the same, and a material for producing a CMP polishing flaw having a defect reduction are described. As indicated above, CMP includes removing the film from the surface of the wafer by pressing a polishing pad against the wafer and rotating the elements relative to one another in the presence of a polishing composition (e.g., a slurry). In the polishing process, a slurry layer is formed between the wafer and the pad' thus forming a hydraulic boundary layer. It is important to maintain a uniform fluid layer between the pad and the wafer during polishing. In the event that the boundary layer is minimized or completely eliminated, the pad will directly contact the wafer' causing the interaction of the two bodies to result in higher defects. Conversely, a highly lubricated interface will allow for more uniform polishing and minimization of defects. This is particularly important in copper CMP where the film being polished is relatively soft and may be easily scratched due to direct contact of the wafer-pad. Conventional polishing pads are made of a polymer, typically an amino phthalate, having a structure that provides a means for distributing the slurry under the wafer during the polishing process. Such structures include voids or micropores which are included by the addition of hollow microelements as described in U.S. Patent No. 5,578,362, or by the introduction of bubbles formed during the encapsulation process. U.S. Patent No. 6,896,593 describes the use of supercritical C02 to form pores during the molding process. Once the mat is formed, it can be further machined on the top surface by mechanical or laser to increase the grooves. For example, U.S. Patent No. 5,489,233 describes the use of a solid plastic sheet which does not have the inherent ability to absorb or transport the slurry, and a surface texture or pattern having a flow path for transporting the slurry across the wafer and polishing. The surface texture is mechanically produced on the crucible by machining. During polishing, a fine diamond-coated disc conditioning mat can be used to create a microtexture that creates micro-groove channels that are further enhanced under the wafer. The distribution of the slurry. During the wafer polishing process, the pad surface also undergoes plastic deformation, which reduces slurry distribution, resulting in poor material removal and removal uniformity. The conditioning process removes the plastically deformed layer and restores polishing performance. In conventional pads, the material itself does not have any inherent ability to absorb significant moisture or polishing solutions, and structures such as micropores, grooves, and micro-grooves are actively involved in the slurry distribution. The polydispersion capacity is important not only for material removal uniformity, but also for defects. In the case of poor slurry distribution between the crucible and the wafer, there is a possibility that a defect in the underlying wafer 134109.doc 200927375 insufficient area causes the pad-wafer to directly contact. In one embodiment, the present invention provides a polymeric polishing pad having the inherent ability to absorb moisture or polishing a solution, and thereby provide a very low defect polished surface. The polishing pad of the present invention can be made of a hydrogel material having the ability to absorb water or a polishing solution in the range of 5 to 60% by weight. The water absorption capacity is controlled during the synthesis of the material. A padded material with the ability to absorb moisture or a polishing solution will provide a lubricated surface during the polishing process and minimize the possibility of direct pad-to-wafer contact, and thereby eliminate or minimize defects' special scratch defects . Processes for the preparation of hydrophilic amine phthalate formulations are described in U.S. Patent Nos. 5,859,166, 5,763,682, 5,424,338, 5,334,691, 5,120,816, 5,118,779, and 4, 〇〇8,189. In the number, each of these cases is incorporated herein by reference. The material properties of the crucible play an important role in the defects generated on the surface of the wafer. Hard pads are usually accompanied by higher defects (which are essentially scratch defects), while 较 softer pads are usually accompanied by lower defects. An important aspect of the cushion is the partial contouring of the surface of the pad to avoid the "hard contact" between the wafer and the pad surface. Another aspect of local surface profiling is the ability of the wafer-wafer interface to maintain an aqueous interface. The aqueous interface provides the necessary lubrication between the wafer and the pad 14 thus minimizing or eliminating the possibility of scratches. The water absorbing polymeric material provides a very stable polishing interface, thus minimizing the potential for defects. U.S. Patent No. 5,763,682 states that many conventional isocyanate-based foaming systems are non-hydrophilic (i.e., relatively hydrophobic ρ is typically based on an amine 134109.doc 200927375 formate-based foam for aqueous fluids. Repulsive, which causes such foams to fail to absorb or pick up significant amounts of aqueous fluid. Therefore, it is believed that typical polyurethane foams are not suitable for providing a highly lubricated polishing interface. Due to the urethanes It is prepared by the reaction of an isocyanate with a polyol, so that the hydrophilic state of the final polymer chain can be controlled by the choice of the polyol. U.S. Patent Nos. 5,859,166, 5,763,682, 5,424,338, 5,334,691, Methods for modifying the hydrophilicity of urethane compositions by Nos. 5, 12, 816, 5, 118, 779 and 4, 008, 189. Hydrophilic polyamino phthalates may be prepared by the use of Ethylene B. The firing unit and the epoxy firing unit are added to the polyol molecule. The total hydroxyl content of the polyol is also an important factor in the hydrophilicity of the polyurethane. The polyhydric alcohol-alkylene oxide addition reactant used to obtain satisfactory hydrophilic properties in the foam must contain a specific proportion of ethylene oxide in the molecule. See incorporated by reference. U.S. Pat. A product of the condensation of a mixture of propane with a polyhydric alcohol. However, when wet, such compositions exhibit a deterioration in mechanical properties. U.S. Patent No. 4,008,189 describes the alkylation of polyether polyols by the use of three oxygenates. A composition of a polyol comprising a reactant to minimize the deterioration of such physical properties. The first of these components is characterized by a trihydric alcohol core, a polyoxyethyl group attached to the core via one end thereof a segment, 134109.doc • 10·200927375 and a polyoxypropylene propyl segment attached to the polyoxyethylene segment via one end thereof. Such a polyol can be prepared by methods well known in the art, such as Alkaline KOH The triol initiator is first condensed with ethylene oxide and then with propylene oxide in the presence of a chemical agent. It is expected that these compositions will be particularly suitable for polishing applications because they enable a highly lubricated polishing interface. It is expected that the crosslinked polymer network will provide the best characteristics, although thermoplastic formulations may be used. The Tecophilic® extrusion molding formulation from Lubriz® is one such material. These materials are adjusted to absorb 20 Water to between 100% by weight. The degree of water absorption is related to the loss of mechanical properties. The higher the weight percentage of absorbed water, the greater the loss of mechanical strength. Therefore, it is advantageous to use a formulation that absorbs about 5-2% by weight of water. , although water absorption up to i 〇〇 wt% can be used. Figure 1A shows a cross-sectional view of a conventional polishing pad 100, such as the 1C 1000 pad provided by R〇hm and ^3. The polishing pad 1 comprises a microcomponent 102 embedded in a polymeric matrix 104 which may be a polyamine phthalic acid vinegar. The pad surface contains grooves 1〇6 for slurry transport during the polishing process. Such commercially available polishing pads can include a plurality of surface modifications to affect the distribution of the slurry on the surface of the pad. Figure 1B shows a cross-sectional view of a polishing pad 1 〇 8 which is manufactured by SemiQuest Corporation and describes the US patent granted to the assignee of the present invention by the application in April, 1977. In the application No. 11/697,622, the disclosure is incorporated herein by reference. The pad 1 8 is composed of a polishing member disposed on a compressible bottom foam ι 12 disposed under the guide plate 114. The polishing action is provided by the polishing elements which are made of a solid polymeric material while the slurry distribution is achieved by the open space between the polishing elements 134109.doc 200927375. The open spaces are filled with open cell foam. In an embodiment of the invention, the polishing surface 104 and/or 110 of either or both of the pads may be formed from a hydrophilic polymeric material. By way of example, such polishing surfaces can be formed from a hydrogel material having the ability to absorb water or a polishing solution in the range of 4 to 60% by weight. The hydrogel material may be one or a combination of the following components: urethane, alkylene oxide, ester, ether, acrylic acid, acrylamide, decylamine, quinone imine, vinyl alcohol, vinyl acetate S Anthracene, acrylate, methyl acrylate, acetonate, urethane, ethylene, monoether ketone and/or carbonate. A quinone imine is a functional group consisting of two carboxylic acid groups or a dicarboxylic acid bonded to a first amine or ammonia, usually from ammonia or the first amine 'and the acid or its anhydride directly preparation. In a particular embodiment of the invention, the polishing surface of the mat may be non-microporous, have a wet tensile strength greater than 1000 psi, a flexural modulus greater than 2000 psi, and/or between 25-80 (including 25 and 80) of the wet Xiao's D hardness of the ❹ hydrogel material. In other cases, the hydrogel material can have a microporosity of about 1-20% by volume, a microporous between about 2〇_1〇〇 microns, a wet tensile strength greater than 1000 psi, greater than 2〇〇〇. Flexural modulus of psi, and wet Xiao's hardness of between 25 and 80 (including 25 and 80). - in a polishing operation, a polishing crucile constructed from a hydrogel material according to the present invention is in the presence of a polishing compound and a semiconductor wafer (eg, having one or more films, oxides disposed thereon) And/or one of the wafers of the metal layer is in surface contact, and the two are rotated relative to each other to achieve a partial or total shift of a top layer disposed on the surface of the wafer substrate 134109.doc -12- 200927375 except. Figure 2 shows this configuration. Fixing the polishing pad 200 to the turntable 2〇2 and bringing it closer to the wafer 204 on the platen 206 «to introduce a slurry or other polishing compound 208 between the polishing pad and the wafer' and to cause the defect and/or The wafers are rotated relative to each other. In some cases, the polishing pad may be immersed in water or a polishing solution before being used in a polishing operation. For example, the pad can be soaked for a period of time (e.g., at least 10 minutes) to produce a stable polished surface prior to processing the wafer. Additionally, the polishing crucible constructed in accordance with the present invention can be immersed in an electrolytic solution to produce a conductive substrate and surface. An example of such an electrolytic solution is copper sulphate. "This pad can be connected to an external power source during the polishing operation. These connections may be anodic and the anode or cathode bias may be applied by an external member. The slurry can be saturated with an electrolyte solution (such as copper sulfate) in this manner and, when a cathode bias is provided by the external member, is applied to the polishing pad having an anode current applied thereto to have a top conductive layer (e.g., steel) deposited thereon. The semiconducting germanium wafer of the structure formed in the underlying film is filled to achieve the removal of the conductive layer. Alternatively, a polishing pad constructed in accordance with the present invention and saturated with an electrolytic solution (e.g., copper sulfate) can be pressed to have a top conductive layer (e.g., when an anode bias is applied by an external member). Copper is deposited thereon to fill the semiconductor wafer of the structure formed in the underlying film to affect the deposition of the conductive layer. The construction of the water material by the water material according to the present invention can be produced by injection molding, extrusion, reaction injection molding or sintering. Surface features can be formed on the crucible during the process. These features contribute to the 134109.doc -13. 200927375 slurry distribution during the polishing operation. Accordingly, polishing pads having reduced defects, methods of making and using such pads, and materials useful for making such pads have been described. While the invention has been described with reference to specific illustrative embodiments, the invention should not be construed as limited, BRIEF DESCRIPTION OF THE DRAWINGS The present invention is illustrated by, but not limited to, the examples in the drawings, wherein: FIG. 1A illustrates a conventional polishing pad of a conventional form, in accordance with the present invention. One embodiment can include a polishing surface constructed from a hydrogel material having inherent water absorption. Figure 1B illustrates a polishing pad having a plurality of polishing elements, one or more of which are constructed of a hydrogel material having inherent water absorption in accordance with another embodiment of the present invention. Figure 2 illustrates a method of using a polishing pad having a polishing surface configured by a hydrogel material having inherent water absorption in accordance with the present invention. [Main component symbol description] 100 polishing pad 102 micro component 104 polymer matrix 106 groove 108 polishing pad 110 polishing element 134109.doc 200927375 112 bottom foam 114 guide plate 200 polishing pad 202 turntable 204 wafer 206 pressure plate 208 slurry ❹ ❹ 134109.doc -15-