200908123 九、發明說明： . 【發明所屬之技術領域】 • 本發明大致係關於基材處理，而更明確地，係關於控 制基材邊緣薄膜輪廓的方法與設備。 【先前技術】 基材係用於電子元件製造中。處理過程中’可將薄膜 Γ 沉積於基材表面上。然而，並不樂見此薄膜位於基材之邊 緣。因此，樂見有適於部分地或完全地自基材之邊緣移除 薄膜的方法與設備。 【發明内容】 本發明之態樣中，提供一種用來研磨基材邊緣上之薄 膜的堍備。該設備包括具有背板之研磨頭，該背板適於將 研磨材料壓向基材邊緣上之薄膜，其中該背板具有適於在 研磨過程中提供預定之薄膜輪廓的輪廓部分（pr〇filed I Portion)。 本發明其他態樣中，提供研磨基材邊緣上之薄膜的系 - 、。該系統包括基材支撐件，適於支撐與旋轉基材；研磨 _ =，具有適於將研磨材料壓向基材邊緣上之薄膜的背板， '、申"亥月板具有適於在研磨過程中提供預定之薄膜輪廓的 輪廓部分；以及控制器，適於操作研磨頭的移動。 本發明其他態樣中，提供研磨基材邊緣上之薄膜的方 。該方法包括選擇輪廓背板所用之擺動（rock)開始角度 200908123 與擺動結束角度；使基材邊緣上之薄膜接觸背板；並 磨過程中抵靠著基材邊緣上之薄膜而擺動背板。 本發明之另一態樣中，提供適合將研磨材料壓向 邊緣上之薄膜的背板，其中該背板具有適於在研磨過 提供預定之薄膜輪廓的輪廓部分。亦提供許多其他態 由隨後之詳細描述、附屬之申請專利範圍與附圖 加完全了解本發明的其他特徵與態樣。 【實施方式】 本發明提供研磨基材邊緣之改善方法與設備。本 書中，詞彙「研磨（polish)」係用來意指磨損沉積於基 之薄膜層。磨損可為部分的，因此殘留較薄的薄膜層 可為完全的，因此無薄膜殘留。本發明提供具有外形 板，該外形實質上相配於殘留在基材邊緣所欲之薄 狀。取決於所欲之薄膜輪廓，可應用具有不同外形之1 亦可將背板抵靠著薄膜而擺動以達到所欲之薄膜輪# 些實施例中，背板可將襯墊壓向基材上之薄膜以使薄 除最佳化。 參照第1圖，基材1 0 0可包括兩個主要表面1 〇 2、 與邊緣104。基材100的各個主要表面102、102’可包 件區106、106’與排除區108、108’（然而一般而言， 主要表面102、102’僅有一個包括元件區與排除區）。 區108、108’可作為元件區106、106’與邊緣104之間 衝。基材1 0 0的邊緣1 0 4可包括外邊緣1 1 0與斜角 在研 基材 程中 樣。 可更 申請 材上 ;或 之背 膜形 '板。 。某 膜移 102, 括元 兩個 排除 的缓 112、 6 200908123 114°斜角丨12、114可位於外邊緣110與兩個主要表面 102、102的排除區108、108,之間。基材1〇0在處理過程 中，可包括沉積於至少一主要表面1〇2與邊緣1〇4上之薄 膜116’其中邊緣104包括至少一斜角112與外邊緣110。 本發明適於研磨基材100之外邊緣110與至少一斜角 11 2、U 4而不影響元件區1 0 6、1 〇 6，。某些實施例中，亦 可清冻或研磨所有或部分的排除區1 08、1 08,。 Γ 第2圖係描述根據本發明之基材研磨系統200之示範 性貝施例的透視圖。第2圖之系統2 〇 〇可適於研磨基材 1 0 0 ’包括例如基材邊緣1 〇 4。邊緣研磨處理中，可研磨基 材邊緣1 04以移除缺陷與污染物，好減小薄膜厚度並更— 般地改善表面一致性。 此處所不之系統2 〇 〇包括三個研磨頭2 0 2，而其可各 自為複數個研磨設備2〇4(用於清潔與研磨基材1〇〇上述之 部分）的部分。可用任何可實行的組合來應用任何數目與類 型之研磨頭202。設備204可由框架所支撐。框架可由任 何可實行的材料（諸如，鋁、不鏽鋼等）所建造。此外，上 述之多頭實施例中，各個頭202可應用不同輪廓背板316 (第3圖）（諸如’平行或垂直於背板擺動平面、不同形狀的 相切接點（cut-off joint)、不同寬度的平坦區域等）。可同 時、個別與/或以任何順序來應用任何數目的頭2〇2。頭 可置於不同位置與不同方位（諸如，與基材邊緣1〇4對準、 垂直於基材邊緣104、與基材邊緣丨〇4夾一角度等），好讓 研磨頭202(與進一步描述於下的襯墊與/或研磨帶）研磨基 200908123 材邊緣104的不同部分。 η 基材1〇〇在研磨時可為固定或旋 轉的。 某些實施例中，—或更多頭202可適於藉由任何適當 的手段而圍繞或沿著基材邊緣j 〇4擺動或移動（例如，圍繞 基材1 0 0之切線軸與/或相對於基材i 〇 〇之周圍而角向轉移 (angularly translate))以便研磨基材1〇〇的不同部分。某些 實施例中’一或更多頭202可持續圍繞或沿著基材1 〇〇之 旋轉邊緣104擺動。不同的頭2〇2可用於不同的基材1〇〇、 不同類型的基材1〇〇或不同的研磨操作。 如圖所示，可利用一或更多研磨設備來執行基材研 磨。一或更多實施例中，可應用複數個研磨設備2 0 4，其 中各個研磨設備 2 0 4可具有相似或不同的特徵與/或機 構。最近的實例中’特定的研磨設備204可用於特定的操 作。例如，一或更多複數個研磨設備204可適於執行相對 粗链的研磨與/或調節’而另外的一或更多複數個研磨設備 2 0 4可適於執行相對細微的研磨與/或調節。可依序應用研 磨設備2 0 4，因此例如首先執行粗糙的研磨步驟並接著應 用細微的研磨步驟而可依照需要或根據研磨方法使得調節 成為相對粗縫的研磨。如圖所示’複數個研磨設備< 位於單一腔室或模组中’或者一或更多研磨設備可位於不 同的腔室或模組中。當應用多個腔室時’可應用機器人成 另外類型的傳送機構於腔室之間移動基材1 〇0 ’以便依序 或另外地應用不同腔室中的研磨設備204。 系統2 0 0亦可包括程式化與/或使用者操作的控制器 200908123 206。控制器206可引導一或更多頭 乂更夕頊2〇2與其他系統組成的 運作與移動，將於下方進一步地描迷。 第3圖係研磨基材邊緣之； 來ίυ4之研磨設備3 00實施例的 概要性透視圖。研磨設備3 〇 〇可白& 』匕括基材傳動器302 (諸 如，伺服馬達、齒輪、傳送帶、赫伙& ^ 鍵條等）裝設於基座3〇4 上。支撐件306 (例如，真空吸盤 ;J稱接（例如，牢固地） 至基材傳動器3 02的軸（未顯示）。 舉例而言，支撐件306 可支撐基材100。基材傳動器3〇2贫* ^ 勒盗302可透過支撐件306圍繞 基材100之中心3 08或另—適當軸 ^ 、田軸而旋轉基材100。基材 傳動器302可連接至基材傳動器控 — ΟΛ )早凡（未顯示）與/或控 制益206，其可控制基材1〇〇的 ,. 又位移、角速度與/或角 加速度。研磨設備300可進— _ ... ^ 括研磨臂3 1 〇 ，其排列 乎正切基材1〇〇之邊緣1〇4 (于# # „ , ^ Λπ (下於第1圖t )的水平面 由框条3 1 2所支撐。其他實施 祕妯中’研磨臂310可不同 地排列，例如與水平面垂直或夾一 , 角度。研磨臂310可包 3 /名頌口 [5/刀3 ! 4 (「頭」）。研磨 例如，細拙 厘頌3 1 4可包括背板3 1 6。 例如，襯墊318可覆蓋背板316。 可台括、s^ 承些實施例中，襯墊3 1 8 了匕括適於研磨基材邊緣1〇4之 用扒堵 ^ 燈表面。襯墊318亦可 用於進一步降低基材1〇〇上之局 特定連力並提咼背板316與 /專膜輪靡的一致性。可藉由α I 器、氣题 欠動器（諸如，液壓致動 風i致動器、伺服馬達等）（未 移離美ij· 1 Λ ”、'不）將背板3 I 6移向或 移離基材100。某些實施例中 3 14 ϋ ® ^ ,b . b 磨咿320可纏繞研磨頭 i復盖背板與襯墊3丨6、3丨8 之間。接虹此細緊於捲軸322、324 炙門捲軸322、3 24分別可由捲 f傳動器326、328 (例如， 200908123 飼服馬達）所驅動。捲轴傳動器326、328可加以行示以準 -確地控制例如來自捲軸322至㈣324前進覆;研磨頭 • 314用於研磨基材邊緣1〇4的研磨帶32〇數量。其他實施 例中，可應用研磨墊或其他研磨材料來替代研磨帶WO。 某些貫施例中，可透過背板3 16以約〇 5 lbs至約2 〇 lbs.範圍之力量將襯墊318壓向基材1〇〇。可應用其他數值 的力量襯塾318可為軟的並/或包括或發展輪廓以符合所 fl 欲之薄膜輪廓。襯墊3 1 8與基材邊緣1 04之間的緊密接觸 搭配基材100的特定旋轉速度，可提供襯墊318與基材邊 緣1 〇 4之間的相對移動，造成沉積於基材邊緣丨〇 4上之薄 膜Π 6的研磨。 某些實施例中，基材1 0 0可接觸襯墊3 1 8約1 5至i 5 〇 秒，這取決於所選之墊的彈性、旋轉速度與/或所需之研磨 量。可應用較多或較少的時間。例如，取決於致動器施加 的力量大小與所選之墊的彈性，可對薄膜Π 6施加受控制 之壓力量。可用其他參數來控制應用之壓力。 ^ ; 襯墊3 1 8可由諸如下列之材料所構成：縮醛樹脂（例 如，DuPont Corporation 所製造的 Delrin )、PVDF、聚氨 酯密閉性發泡結構（p〇1yurethane closed CeU foam)、矽膠 ' 等。可應用其他適當的材料。上述之材料可具有彈性或符 - 合能力，這係墊之厚度或密度的函數。可根據其彈性來抵 選材料。可基於所需之研磨類型來選擇所欲之彈性。某些 實施例中，襯墊3 1 8具有可調節符合基材之邊緣1 0 4的能 力，例如藉由包括可膨脹的囊袋。 10 200908123200908123 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates generally to substrate processing and, more particularly, to methods and apparatus for controlling the contour of a film at the edge of a substrate. [Prior Art] The substrate is used in the manufacture of electronic components. The film Γ can be deposited on the surface of the substrate during processing. However, it is not appreciated that the film is located on the edge of the substrate. Accordingly, it is appreciated that there are methods and apparatus suitable for partially or completely removing a film from the edge of a substrate. SUMMARY OF THE INVENTION In one aspect of the invention, a device for polishing a film on the edge of a substrate is provided. The apparatus includes a polishing head having a backing plate adapted to press an abrasive material against a film on an edge of the substrate, wherein the backing plate has a contour portion adapted to provide a predetermined film profile during the grinding process (pr〇filed I Portion). In other aspects of the invention, a system for polishing a film on the edge of a substrate is provided. The system includes a substrate support adapted to support and rotate the substrate; a grinding_=, a backing plate having a film adapted to press the abrasive material against the edge of the substrate, ', Shen" A contour portion of the predetermined film profile is provided during the grinding process; and a controller adapted to operate the movement of the polishing head. In other aspects of the invention, a method of abrading a film on the edge of a substrate is provided. The method includes selecting a rock start angle 200908123 and a swing end angle for the contour backing plate; contacting the film on the edge of the substrate with the backing plate; and oscillating the backing plate against the film on the edge of the substrate during the grinding process. In another aspect of the invention, a backsheet is provided which is adapted to press the abrasive material against the edge of the film, wherein the backsheet has a contoured portion adapted to provide a predetermined film profile during grinding. Other features and aspects of the invention will be apparent from the following detailed description, appended claims and claims. [Embodiment] The present invention provides an improved method and apparatus for grinding the edge of a substrate. In the present context, the term "polish" is used to mean a layer of film deposited by abrasion on a substrate. The wear can be partial, so that the thinner film layer remaining can be complete, so no film remains. The present invention provides a contoured panel that substantially conforms to the desired thinness remaining on the edge of the substrate. Depending on the desired profile of the film, a different profile can be applied. The backsheet can also be swayed against the film to achieve the desired film wheel. In some embodiments, the backsheet can press the liner against the substrate. The film is optimized for thinning. Referring to FIG. 1, the substrate 100 may include two major surfaces 1 〇 2, and an edge 104. Each major surface 102, 102' of the substrate 100 can include the package regions 106, 106' and the exclusion regions 108, 108' (however, in general, only one of the major surfaces 102, 102' includes the component and exclusion regions). The regions 108, 108' can be rushed between the component regions 106, 106' and the edge 104. The edge 1 0 4 of the substrate 100 may include the outer edge 1 1 0 and the bevel angle in the substrate process. Can be applied to the material; or the back of the membrane-shaped plate. . A film shift 102, a square of two exclusions 112, 6 200908123 114° bevels 12, 114 may be located between the outer edge 110 and the exclusion zones 108, 108 of the two major surfaces 102, 102. Substrate 100 may include a film 116' deposited on at least one major surface 1〇2 and edge 1〇4 during processing, wherein edge 104 includes at least one bevel 112 and outer edge 110. The present invention is suitable for grinding the outer edge 110 of the substrate 100 with at least one bevel 11 2 , U 4 without affecting the component regions 1 0 6 , 1 〇 6. In some embodiments, all or part of the exclusion zone 108, 108 may also be frozen or ground. Γ Figure 2 is a perspective view showing an exemplary embodiment of a substrate polishing system 200 in accordance with the present invention. The system 2 of Figure 2 〇 〇 can be adapted to grind the substrate 1 0 0 ' including, for example, the edge of the substrate 1 〇 4. In the edge grinding process, the edge of the substrate can be ground 104 to remove defects and contaminants, to reduce film thickness and to improve surface uniformity more generally. The system 2 〇 此处 herein does not include three polishing heads 2 0 2, but each of them may be a portion of a plurality of polishing apparatuses 2〇4 (for cleaning and polishing the substrate 1). Any number and type of polishing heads 202 can be applied in any practicable combination. Device 204 can be supported by a frame. The frame can be constructed from any implementable material such as aluminum, stainless steel, and the like. Moreover, in the above-described multi-head embodiment, each head 202 can be applied with a different contour backing plate 316 (Fig. 3) (such as 'parallel or perpendicular to the backing plate swinging plane, different shapes of cut-off joints, Flat areas of different widths, etc.). Any number of headers 2〇2 can be applied simultaneously, individually, and/or in any order. The head can be placed in different positions and in different orientations (such as alignment with the substrate edge 1〇4, perpendicular to the substrate edge 104, at an angle to the substrate edge 丨〇4, etc.) to allow the polishing head 202 (and further The liner and/or abrasive belt described below is a different portion of the abrasive substrate 200908123 material edge 104. The η substrate 1〇〇 may be fixed or rotated during grinding. In some embodiments, the or more heads 202 may be adapted to swing or move around or along the edge of the substrate by any suitable means (eg, around a tangential axis of the substrate 1000) and/or It is angularly translated with respect to the periphery of the substrate i to grind different portions of the substrate 1〇〇. In some embodiments, one or more of the heads 202 can continue to wrap around or along the rotating edge 104 of the substrate 1 . Different heads 2〇2 can be used for different substrates, different types of substrates, or different grinding operations. As shown, one or more grinding equipment can be utilized to perform substrate grinding. In one or more embodiments, a plurality of grinding devices 220 can be applied, wherein each of the grinding devices 240 can have similar or different features and/or mechanisms. In the most recent example, the particular grinding apparatus 204 can be used for a particular operation. For example, one or more of the plurality of grinding devices 204 can be adapted to perform grinding and/or conditioning of relatively thick chains while the other one or more plurality of grinding devices 204 can be adapted to perform relatively fine grinding and/or Adjustment. The grinding device 220 can be applied in sequence, so that, for example, the rough grinding step is first performed and then the fine grinding step is applied, and the adjustment can be made into a relatively coarse slit as needed or according to the grinding method. As shown, the plurality of grinding devices <in a single chamber or module' or one or more of the grinding devices can be located in different chambers or modules. When multiple chambers are applied, the robot can be applied as another type of transport mechanism to move the substrate 1 〇0 ' between the chambers to sequentially or additionally apply the grinding apparatus 204 in the different chambers. System 200 may also include a controller and/or user-operated controller 200908123 206. The controller 206 can direct the operation and movement of one or more of the other modules to other systems, as further described below. Figure 3 is a schematic perspective view of an embodiment of a grinding apparatus 3 00 for grinding the edge of a substrate. The grinding apparatus 3 〇 〇 white & 』 includes a substrate actuator 302 (such as a servo motor, a gear, a conveyor belt, a Hertz & ^ key strip, etc.) mounted on the base 3〇4. A support member 306 (eg, a vacuum chuck; J is attached (eg, securely) to a shaft (not shown) of the substrate actuator 302. For example, the support member 306 can support the substrate 100. The substrate actuator 3 〇2 lean* ^ The thief 302 can rotate the substrate 100 through the support member 306 around the center 3 08 of the substrate 100 or another appropriate axis, the field axis. The substrate actuator 302 can be connected to the substrate actuator control - ΟΛ) Early (not shown) and/or Control Benefit 206, which controls the displacement, angular velocity and/or angular acceleration of the substrate. The grinding apparatus 300 can include a grinding arm 3 1 〇 which is arranged at the edge of the tangential substrate 1〇〇1〇4 (at ## „ , ^ Λπ (below the first figure t) Supported by the frame strip 3 1 2. In other implementation tips, the 'grinding arm 310 can be arranged differently, for example, perpendicular to the horizontal plane or at an angle. The grinding arm 310 can be wrapped in 3 / 颂 mouth [5 / knife 3 ! 4 ("Head"). Grinding, for example, the fine PCT 3 1 4 may include a backing plate 316. For example, the lining 318 may cover the backing plate 316. It may be included, in some embodiments, the gasket 3 1 8 The surface of the lamp is suitable for grinding the edge of the substrate. The pad 318 can also be used to further reduce the specific bonding force on the substrate 1 and to improve the back plate 316 and / The consistency of the membrane rim can be achieved by α I, gas turbine (such as hydraulically actuated wind i actuator, servo motor, etc.) (not removed from the US ij · 1 ” ”, 'no) The backing plate 3 I 6 is moved toward or away from the substrate 100. In some embodiments, 3 14 ϋ ® ^ , b . b 咿 320 can be wound around the polishing head i covering the back plate and the gasket 3丨6, 3丨8 Between the rainbow, this is tighter than the reels 322, 324 The trickle reels 322, 3 24 can each be driven by a roll f actuator 326, 328 (e.g., 200908123 feed motor). The reel actuators 326, 328 can be illustrated to accurately control, for example, from reels 322 through (d) 324. Advance coating; polishing head • 314 is used to grind the number of grinding belts 32〇 of the edge of the substrate 1〇4. In other embodiments, a polishing pad or other abrasive material may be used instead of the abrasive belt WO. In some embodiments, The liner 318 is pressed against the substrate 1 through a backing plate 3 16 at a force ranging from about 5 lbs to about 2 lbs. The other values of strength lining 318 may be applied and/or included or developed. Contouring to conform to the desired film profile. The intimate contact between the liner 3 18 and the substrate edge 104 is matched to the specific rotational speed of the substrate 100 to provide between the liner 318 and the substrate edge 1 〇 4 The relative movement causes grinding of the film Π 6 deposited on the edge 丨〇 4 of the substrate. In some embodiments, the substrate 100 can contact the pad 3 1 8 about 15 to i 5 sec, depending on The elasticity of the selected pad, the speed of rotation and/or the amount of grinding required. More or less can be applied For example, depending on the amount of force applied by the actuator and the elasticity of the selected pad, a controlled amount of pressure can be applied to the membrane Π 6. Other parameters can be used to control the applied pressure. ^; Pad 3 1 8 can be A material such as acetal resin (for example, Delrin manufactured by DuPont Corporation), PVDF, urethane closed CeU foam, silicone rubber, and the like. Other suitable materials can be applied. The materials described above may have an elastic or conforming ability as a function of the thickness or density of the mat. Materials can be selected based on their elasticity. The desired elasticity can be selected based on the type of grinding desired. In some embodiments, the liner 3 18 has an ability to adjust to the edge of the substrate 104, such as by including an expandable bladder. 10 200908123
或更多實施例中’研磨帶32〇與/或襯墊3丨8可由許 夕不同材料所製成與/或包括許多不同材料，諸如氧化鋁、 氧化矽、碳化矽等。亦可應用其他材料。某些實施例中， 雖然可應用其他尺寸’但所用之研磨料尺寸範圍係約〇 · 5 微米至約3微米。雖然可應用其他的研磨帶寬度，但可應 用靶圍約0.2英吋至約15英吋不同寬度之研磨帶32〇。一 或更夕實施例中’研磨帶3 2 0可為约〇 · 〇 〇 2至約0 · 0 2英吋 厚並可禁得起約1至5 ibs.的張力。可應用具有不同厚度 與張力強度的其他帶。捲軸322、324的直徑可約為i英吋 並此夠固持約5 00英吋的研磨帶32〇 ;或者直徑可約為3 央吋並能夠固持約3〇,〇〇〇英吋的研磨帶。可應用其他捲軸 尺寸捲轴3 2 2、3 24可由諸如聚氨酯（poly urethane)、聚 一氟乙烯（polyvinyl diflu〇ride，PVDF)等材料所構成。亦可 應用其他材料。 某些貫施例中，隨著基材i 〇 0旋轉’研磨頭3 1 4可圍 繞基材邊緣1 04擺動以研磨整個邊緣1 〇4。操作中，這可 藉由在基材100旋轉時轉變頭314之角度圍繞正切於基材 1〇〇之外邊緣no的軸並因此使背板316與襯墊318接觸 並符合基材100之邊緣104的輪廓而達成。某些實施例中， 頭3 14可適合持續或閒歇地於不同位置間擺動。頭可 在控制器206(第2圖）的引導下由傳動器（未顯示）所移動。 或者，當基材100未旋轉時，頭314可固定與/或稍微調整。 又其他實施例中，當頭314擺動（如上所述）以及圍繞基材 周圍旋轉時’基材10〇可保持固定。 11 200908123 某些實施例中，基材1 〇 〇旋轉於水平面中。基材邊緣 * 104可對準或垂直於襯墊318 (與背板316)與/或研磨頭 • 3 1 4。額外或替代的實施例中，基材1 〇 〇可旋轉於垂直平 面、另一非水平面中與/或在不同旋轉平面之間移動。雖然 可應用其他速度，但所用之基材丨〇〇選轉速度範圍係例如 約 50 至 300 RPM。 附加地或替代地，本發明可包括工具（諸如，喷嘴或喷 官（bar))以傳送液體至即將研磨之基材邊緣104。某些實施 例中’可提供一或更多通道以引導化學物或水至基材邊緣 1 〇 4以幫助研磨與/或洗掉研磨所造成之微粒。化學品可直 接喷麗於基材1 〇 〇上、基材/襯墊接合處與/或可施加與/咬 佈滿襯墊3 1 8。某些實施例中，可應用音波（例如，超音波、 噴嘴來傳送聲裂液體至基材邊緣丨〇4以補充清潔。可自武 材丨00任一或兩側喷灑液體，而本發明可應用重力或吸弓丨 力導致流出物不污染或接觸本發明之基材〗〇 〇或設備的其 他部分。再者’可藉由流體攜帶上述之能量而將能量（例 " 如’超音波能量）施加於基材邊緣1 〇 4。 如上所述’某些實施例中，控制器2 〇 6 (例如，程式化 . 電腦、程式化處理器、閘陣列、邏輯電路、嵌入式即時處 理器等）可控制用來旋轉基材1 0 0之傳動器以及用來將背 板316與襯墊318壓向基材邊緣104上之薄膜116的致動 器。注意控制器2 0 6可耦接（諸如，電性、機械性、氣屋式、 液壓式等）至各個複數個致動器。同樣地，流體通道的運作 亦可受控制器206的引導。控制器206的引導下，可藉由 12 200908123 流體通道4擇陡地傳送不同流體至襯塾3 1 8與/或基材邊 緣104。掖制15 206可適於自傳動器輿/或致翻哭《收 /、· ^Λί <S- α*Ί 2¾. 丄u v V ΡΊ戈口 ，妖得固符 基材100之真空吸盤）與/或啟動致動器去推背板316與隨 後之襯墊3 1 8的能量大小。這些反饋信號可用來測定何時 4膜116之特定層與/或是否已經發生足夠數量In other embodiments, the abrasive tape 32 〇 and/or the liner 3 丨 8 may be made of different materials and/or include many different materials such as alumina, yttria, tantalum carbide, and the like. Other materials can also be applied. In some embodiments, although other sizes are applicable, the size of the abrasive used ranges from about 〇 5 μm to about 3 microns. Although other belt widths can be applied, it is possible to use a belt 32 of a different width from about 0.2 inches to about 15 inches. In one or more embodiments, the abrasive tape 3 20 may be from about 〇 · 〇 〇 2 to about 0 · 0 2 inches thick and can withstand a tension of about 1 to 5 ibs. Other tapes with different thicknesses and tensile strengths can be applied. The reels 322, 324 may have a diameter of about 1 inch and are sufficient to hold about 500 feet of the abrasive belt 32 〇; or a diameter of about 3 吋 and can hold about 3 〇, 研磨 吋 吋 研磨. Other reels can be applied. Size reels 3 2 2, 3 24 can be composed of materials such as polyurethane (polyurethane), polyvinyl difluoroethylene (PVDF). Other materials can also be applied. In some embodiments, the polishing head 3 1 4 is swung around the substrate edge 104 as the substrate i 〇 0 rotates to grind the entire edge 1 〇4. In operation, this can be achieved by the angle of the transition head 314 as the substrate 100 rotates about the axis tangential to the outer edge of the substrate 1 and thus the backing plate 316 is in contact with the liner 318 and conforms to the edge of the substrate 100. The outline of 104 is achieved. In some embodiments, the heads 3 14 can be adapted to oscillate between different positions either continuously or intermittently. The head can be moved by a actuator (not shown) under the guidance of controller 206 (Fig. 2). Alternatively, the head 314 can be fixed and/or slightly adjusted when the substrate 100 is not rotated. In still other embodiments, the substrate 10 can remain stationary as the head 314 is swung (as described above) and rotated about the periphery of the substrate. 11 200908123 In some embodiments, the substrate 1 〇 〇 is rotated in a horizontal plane. The substrate edge * 104 can be aligned or perpendicular to the liner 318 (and the backing plate 316) and/or the polishing head • 3 1 4 . In an additional or alternative embodiment, the substrate 1 〇 can be rotated in a vertical plane, in another non-horizontal plane, and/or between different planes of rotation. Although other speeds can be applied, the substrate selection speed range used is, for example, about 50 to 300 RPM. Additionally or alternatively, the invention may include a tool, such as a nozzle or bar, to deliver liquid to the edge 104 of the substrate to be ground. In some embodiments, one or more channels may be provided to direct the chemical or water to the edge of the substrate 1 〇 4 to aid in grinding and/or washing away the particles caused by the grinding. The chemical can be sprayed directly onto the substrate 1 〇 、, the substrate/pad joint and/or the padding 3 1 8 can be applied. In some embodiments, sound waves (eg, ultrasonic waves, nozzles may be applied to deliver the sound-cracking liquid to the edge of the substrate 4 to supplement the cleaning. The liquid may be sprayed from either or both sides of the material 00, and the present invention Gravity or suction force can be applied to cause the effluent to not contaminate or contact the substrate of the present invention or other parts of the device. Furthermore, the energy can be carried by the fluid carrying the above energy (eg " The sonic energy is applied to the edge of the substrate 1 〇 4. As described above, in some embodiments, the controller 2 〇 6 (eg, stylized. computer, stylized processor, gate array, logic circuit, embedded instant processing) The actuator can be used to control the actuator used to rotate the substrate 100 and the membrane 116 used to press the backing plate 316 and the liner 318 against the substrate edge 104. Note that the controller 2 0 6 can be coupled. Connecting (for example, electrical, mechanical, gas house, hydraulic, etc.) to each of the plurality of actuators. Similarly, the operation of the fluid passage can also be guided by the controller 206. Under the guidance of the controller 206, By 12 200908123 fluid channel 4 chooses to transmit steeply Fluid to the lining 3 18 and/or the substrate edge 104. The raft 15 206 can be adapted to self-adaptor 舆 / or turn to cry "收 /, · ^ Λ ί ί S S S V V V V V V V V V V V V V ΡΊ戈口, demon to the vacuum chuck of the substrate 100) and / or start the actuator to push the energy of the backing plate 316 and the subsequent pad 3 18 . These feedback signals can be used to determine when a particular layer of film 116 and/or a sufficient amount has occurred
緣104。掖制器206可適於自傳動器與/或致動器接收反饋 信號，其分別表示施加用來驅動基材1 00 (例如，旋轉固持 >之真空吸盤）與/或敌私功如级1 i R 已經移除 的研磨 Γ 轉向第4圖’提供根據本發明之背板3】6的概要透視 圖。如上所述，㈣1 302 V造成基材支撐件3 06旋轉基 材1〇〇,如方向箭頭所示或相反方向。隨箸基材iOO旋轉， =板316可接觸並將襯塾川（與/或研磨帶或研磨塾）壓向 基材邊緣1 〇 4，如方仓並-κ . 則碩、襯墊與背板之虛線所示，藉Edge 104. The controller 206 can be adapted to receive feedback signals from the actuator and/or the actuator, respectively representing the application of a vacuum chuck for driving the substrate 100 (eg, rotational holding) and/or enemy power level. 1 i R Abrasive 已经 that has been removed Turning to Fig. 4' provides a schematic perspective view of the backsheet 3 according to the present invention. As described above, (iv) 1 302 V causes the substrate support member 306 to rotate the substrate 1 〇〇 as indicated by the directional arrow or in the opposite direction. As the substrate iOO rotates, the = plate 316 can be contacted and the liner (and/or the abrasive belt or abrasive burr) can be pressed against the edge of the substrate 1 〇 4, such as a square and a κ. As shown by the dotted line of the board, borrow
生特定的薄膜輪廓。某些實施例中’概塾3i8可符合 或可順從背板3 1 6之形狀甘m L ,b. 心狀並固定於上。其他實施例中，如 此處所示，襯墊3 1 8本身甘x斤人办, 柘 身並不付合者板3 1 6之形狀，但背 抵靠襯墊318的移動方θ 0 ^ ^ ^ 秒勖方向與力罝可依照背板3】6之 心狀產生所欲之薄膜輪廓。 < 向第5 Α圖’描述根據 概要横截面圓。，隹土 +知月之不章巳性#板3 16的 定平面(：進一步描述於下，背板⑴可在明確的預 十面（包括擺動開始角度盥& 頂 316可@ 用度與結束角度之間）中擺動。背板 J匕括適於接觸襯墊 板 塾之表面400… （第3圖)與/或研磨帶或研磨 包括第-平拍“ “ 肩她财彦板316可更包括 a,, . °° 2與第二彎曲區域4 0 4之輪廓部a 例如’適於接觸概塾分。 /、/或研磨帶或研磨墊的背板3i6 13 200908123 之彎曲區域4 0 4的表面4 0 0可具有與背板擺動 面形狀。彎曲區域4 0 4的半徑為R1。舉例而言 之半徑（R1)範圍自5mm至無窮大（平坦表面）。 適當的半徑值。可選擇半徑R1以對研磨基材 類型之薄膜提供處理最佳化的靈活性。相切接 於平坦區域4 0 2與彎曲區域4 0 4的結合處。舉 切接點406的寬度範圍係0至50mm。可應用 寬度。相切接點的寬度可提供對即將研磨之基 之寬度的另一控制。 轉向第5 B圖，提供第5 A圖所示之背板3 進一步描述於第5 B圖中，相切接點4 0 6之形 基材邊緣1 0 4上之薄膜1 1 6之輪廓的控制。進 下，研磨輪廓可為移除薄膜1 1 6時產生之形狀 由選擇擺動開始與結束角度搭配彎曲區域4 0 4 可控制即將研磨之基材邊緣1 0 4的寬度。舉例 可自基材外邊緣Π 0部分地或完全地移除0至 輪廓的薄膜11 6。可應用其他適當的移除面積< 如上所述，相切接點406可位於平坦區域 區域404的結合處。彎曲區域404可接觸基材 主要（或頂部）表面1 〇 2。如此處所示，彎曲區： 主要表面1 02的部分完全地移除薄膜1 1 6。平 亦可接觸基材邊緣1 0 4之主要表面1 0 2上的薄 僅可部份地移除薄膜1 1 6。應用相切接點4 0 6 域404與平坦區域402接觸薄膜116之位置的 面平行之球 ，背板3 1 6 可應用其他 1 00上不同 點4 0 6可位 例而言，相 其他適當的 材邊緣 1 0 4 1 6的圖示。 狀可提供對 一步描述於 。此外，藉 之半徑R 1， 而言，每次 5 0 m m預定 4 02與彎曲 邊緣1 0 4之 或404可自 坦區域402 膜1 1 6 ，但 可在彎曲區 薄膜1 1 6中 14 200908123 產生銳利角度的輪廓。相切接點4〇6的形狀可提供 邊緣之輪廓的控制。 、 轉向第6A圖’提供根據本發明之背板5〇〇的另一示 fe性實施例。此處顯示之實施例中，背板5〇〇之表面Μ] 有平β的球面形狀或輪廓。不像第5A圖之背板316，此 處顯不之％板500的球面形狀可垂直於背板擺動平面且半 ❹R2 ° @言’垂直方向可讓襯塾3 1 8 (與/或研磨帶 與’或研磨墊)在研磨期間所有時刻接觸背板表面502。R2 的數值範圍係例如5()匪至5⑽襲，而這係取決於背板、 二磨帶與/或研磨塾特性。彳應用其他適當的數值。背板 :之表面502的平滑-曲變化亦可提供平滑的薄膜輪 :、a由將相切接點4〇6之形狀自銳利轉角（第5 a圖)轉變 成平滑彎曲·變f，_ — 6 A圖），溥膜1 1 6之輪廓可具有急劇或 逐漸減小的邊緣。 舉例而5 ’背板316、5〇〇可由複數個材料（諸如，金 屬與塑膠）所椹# 3 1 ό、5 〇 〇之材厂可應用其他適當的材料。用於形成背板 例如，术科種類取決於即將研磨之薄膜116的類型。 係像氮化矽般堅固，那麼背板316、500 J田堅：固的材質〇 另_ (例如，金屬等）所構成以改善研磨效率。 方面，軟性後 膠枯 ，域1 1 6(例如，非晶碳薄膜）需要應用由塑 膠材枓所構成之 月板316、500以避免傷害基材100。某些 只靶例中，襯墊 牛吹， α表面可進一步由墊狀物所覆蓋以進一 乂降低局部壓力， ^ 並提尚對所欲之薄膜輪廓的順從性。 轉向第6Β圖 , ’提供第6Α圖所示之背板5〇〇的圖示。 15 200908123 如此處所示，背板5 0 0之表面5 0 2具有平滑的球面 因此，不像第5 Β圖所示以相切接點4 0 6形成之薄 的銳利角度輪廓，以平滑背板5 0 0產生之薄膜1 1 6 係平滑的且顯示平滑的彎曲變化與逐漸減小的邊緣 轉向第7圖，描述根據本發明之背板6 0 0的另 性實施例的概要橫截面圖。此處顯示之背板6 0 0可 個相切接點602a、602b。可應用其他背板600形狀 處所示，背板604之頂表面可包括平坦區域606, 相切接點6 0 2 a與6 0 2 b之間。舉例而言，平坦區域 長度或寬度範圍係約 〇至 50 mm。可應用其他適 度。較小的平坦區域6 0 4會造成薄膜1 1 6與基材邊 上的較大局部壓力（第1圖）。較小的平坦區域6 0 4 進背板600對準於基材邊緣1 04(並因此對準襯墊、 或研磨墊）。較大的平坦區域604寬度可造成更有效 襯墊318、研磨帶與/或研磨墊，因為有較大的表面 接觸薄膜1 1 6與基材邊緣1 04。與較大及較小的平 6 04相關的不同優點可根據目標的特定薄膜與所欲 輪廓提供最佳化處理的靈活性。 轉向第8圖，提供描述研磨基材邊緣1 04之示 法8 0 0的流程圖。步驟S 8 0 2中，選擇適當的背板 附著或耦接至研磨頭 3 1 4。適當的背板可為用來產 所欲之薄膜輪廓的背板3 1 6。步驟S 8 0 4中，選擇擺 與結束角度。如上所述，擺動開始與結束角度可顯 3 1 6移動的路徑。例如，若擺動開始角度為零度而 外形。 膜116 的輪廓 〇 一示例 包括兩 。如此 描繪於 606之 當的長 緣104 亦可促 研磨帶 地利用 區域可 坦區域 之薄膜 範性方 3 1 6並 生特定 動開始 不概塾 擺動結 16 200908123 束角度為1 5 °，當背板3 1 6接觸薄膜1 1 6時其係在0至1 5 ° 的路徑中擺動。步驟S 8 0 6中，背板3 1 6接觸並施加力量 於襯墊3 1 8、研磨帶與/或研磨墊。步驟S 8 0 8中（例如，當 基材旋轉時），背板316透過襯墊318、研磨帶與/或研磨墊 接觸基材邊緣1 04以產生特定的薄膜1 1 6輪廓。接觸可透 過一擺動移動，如擺動開始與結束角度所示。步驟 S 8 10 中，當產生預定的薄膜輪廓時停止研磨。Create a specific film profile. In some embodiments, the '3' may conform to or conform to the shape of the backing plate 3 1 6 , and be heart-shaped and fixed thereto. In other embodiments, as shown here, the pad 3 1 8 itself is not sturdy, and the body does not fit the shape of the plate 3 16 , but the movement of the back against the pad 318 θ 0 ^ ^ ^ Seconds direction and force can produce the desired film contour according to the heart shape of the back plate 3]6. < to the fifth diagram' is described in accordance with the outline cross-sectional circle. , 隹土 + know the moon is not 巳 # 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板 板Swing in between the end angles. The back plate J includes a surface 400 suitable for contacting the liner sheet... (Fig. 3) and/or the abrasive belt or grinding includes the first-flat shot "" shoulder her financial board 316 Further includes a, , ° ° ° and the second curved region 404 contour portion a such as 'suitable for contact with the outline. /, / or the polishing pad or the backing plate of the polishing pad 3i6 13 200908123 bending region 4 0 The surface 400 of 4 may have a shape of a wobble surface with the back plate. The radius of the curved region 404 is R1. For example, the radius (R1) ranges from 5 mm to infinity (flat surface). Appropriate radius value. The radius R1 provides flexibility in the treatment of the film of the abrasive substrate type. The tangency is tangential to the junction of the flat region 420 and the curved region 404. The width of the lift contact 406 is 0 to 50 mm. The width can be applied. The width of the tangent joint provides another control of the width of the base to be ground. Figure B, providing the backsheet 3 shown in Figure 5A is further described in Figure 5B, the control of the contour of the film 1 16 on the edge of the substrate tangentially connected to the shape of the junction 4 0 6 . The grinding profile can be a shape that is produced when the film 1 16 is removed. The shape of the edge of the substrate to be ground is 104 4 by controlling the shape of the starting and ending angles of the curved portion. The width of the edge of the substrate to be ground can be controlled. Π 0 partially or completely removes the 0 to the contoured film 117. Other suitable removal areas may be applied. As described above, the tangential contact 406 may be located at the junction of the flat area 404. The curved area 404 may Contact the main (or top) surface of the substrate 1 〇 2. As shown here, the bending zone: the part of the main surface 102 is completely removed from the film 1 16 . The flat surface can also contact the main surface of the substrate edge 104. The thinner on 0 2 can only partially remove the film 1 16 . The tangential joint 4 0 6 field 404 is applied to the parallel plate of the flat region 402 in contact with the surface of the film 116, and the back plate 3 1 6 can be applied to other The difference between 1 00 and 4 0 6 is a graphical representation of other suitable material edges 1 0 4 1 6 . It can be provided in one step. In addition, by the radius R 1, each time 50 mm is scheduled to be 4 02 with the curved edge 1 0 4 or 404 can be self-tank region 402 film 1 16 but can be in the bending zone Film 1 1 6 of 14 200908123 produces a sharp angled profile. The shape of the tangent joint 4〇6 provides control of the contour of the edge., Turning to Figure 6A' provides another illustration of the backing plate 5〇〇 according to the present invention. Fe embodiment. In the embodiment shown here, the surface of the backing plate 5 has a spherical shape or contour of flat beta. Unlike the backing plate 316 of Figure 5A, the spherical shape of the % plate 500 shown here can be perpendicular to the plane of the backing plate and the half ❹R2 ° @言' vertical direction allows the lining 3 1 8 (and/or the grinding tape) The backing surface 502 is contacted with the 'or polishing pad' at all times during the grinding. The range of values for R2 is, for example, 5 () 匪 to 5 (10), depending on the backsheet, the second belt and/or the abrasive 塾 characteristics.彳 Apply other appropriate values. Backplane: The smooth-curved surface of surface 502 can also provide a smooth film wheel: a is converted from a sharp corner (Fig. 5a) to a smooth bend/f, from the shape of the tangent joint 4〇6, _ — 6 A)) The contour of the diaphragm 1 16 may have sharp or tapered edges. For example, the 5' backsheets 316, 5 can be made of a plurality of materials (such as metal and plastic). Other materials can be applied to the #3 1 ό, 5 〇 〇 material factory. For forming a backing sheet, for example, the type of surgery depends on the type of film 116 to be ground. It is as strong as tantalum nitride, so the backing plate 316, 500 J Tianjian: solid material 〇 another _ (for example, metal, etc.) to improve the grinding efficiency. In terms of softness, the domain 1 16 (for example, an amorphous carbon film) requires the application of a moon plate 316, 500 composed of a plastic material to avoid damage to the substrate 100. In some target applications, the pad is blown, and the alpha surface can be further covered by the pad to further reduce the local pressure, and to provide compliance with the desired film profile. Turn to Figure 6 to provide an illustration of the backplane 5〇〇 shown in Figure 6. 15 200908123 As shown here, the surface of the backing plate 500 has a smooth spherical surface. Therefore, unlike the thin curved outline formed by the tangent joint 406 as shown in Fig. 5, the back is smooth. The film 1 0 6 produced by the plate 100 is smooth and shows a smooth bending change and a gradually decreasing edge turn. FIG. 7 depicts a schematic cross-sectional view of an alternative embodiment of the backing plate 600 according to the present invention. . The backplane 600 shown here can be tangential joints 602a, 602b. As shown at the shape of the other backing plate 600, the top surface of the backing plate 604 can include a flat region 606 between the tangent joints 60 2 a and 60 2 b. For example, the length or width of the flat area is approximately 50 mm. Other modalities can be applied. The smaller flat area 604 causes a greater local pressure on the film 1 16 and the substrate side (Fig. 1). The smaller flat area 60 4 is aligned with the backing plate 600 at the edge of the substrate 104 (and thus aligned with the liner, or polishing pad). The larger flat area 604 width may result in a more effective liner 318, abrasive belt and/or polishing pad because of the larger surface contact film 1 16 and substrate edge 104. The different advantages associated with larger and smaller flats provide the flexibility to optimize processing depending on the particular film desired and the desired profile. Turning to Figure 8, a flow chart depicting the method 800 of grinding the edge of the substrate 104 is provided. In step S 8 0 2, an appropriate backing plate is selected to be attached or coupled to the polishing head 3 14 . A suitable backsheet can be the backsheet 3 16 that is used to produce the desired film profile. In step S 8 0 4, the pendulum and end angles are selected. As described above, the swing start and end angles can show a path of 3 16 movement. For example, if the swing start angle is zero degree and the shape. The outline of the film 116 〇 includes two examples. The long edge 104 thus depicted at 606 can also be used to promote the use of the film in the region of the film. 3 1 6 and the specific motion start does not oscillate the knot 16 200908123 beam angle is 15 °, when the back When the plate 3 16 contacts the film 1 16 , it oscillates in a path of 0 to 15 °. In step S108, the backing plate 3 16 contacts and applies force to the pad 3 18, the abrasive tape and/or the polishing pad. In step S80 (e.g., when the substrate is rotated), the backing plate 316 contacts the substrate edge 104 through the liner 318, the abrasive tape and/or the polishing pad to create a particular film 1 16 profile. The contact can be moved through a swing, as indicated by the start and end angles of the swing. In step S 8 10, the grinding is stopped when a predetermined film profile is produced.
應當理解此處描述之本發明的邊緣研磨設備可用於除 了適於斜角與邊緣研磨與/或移除基材上薄膜那些以外之 设備。再者'熟悉技術之人士可明顯得知此處所述之設備 可用於研磨與/或移除以任何方向（諸如，水平、垂直、傾 斜等）支撐之基材的邊緣上之薄膜。 再者，應該理解雖然僅揭露清潔圓形基材的實施例， 但本發明可經改良以清潔具有其他形狀的基材（諸如，平板 顯示器的玻璃或聚合物板）。再者，雖然上方顯示藉由設備 處理單一基材，但在某些實施例t，設備可同時處理複數 個基材。 上述僅揭露本發明之示範性實施例。熟悉技術之人士 可輕易得知位於本發明範圍内上述設備與方法的修飾。例 如，可應用具有其他輪廓（諸如，橢圓、六角形或其他輪廓） 的其他背板。因此，雖然已經參照其之示範性實施例而揭 露本發明，但應當理解其他實施例可能會位於隨後之申請 專利範圍所界定之本發明的精神與範圍内。 17 200908123 【圖式簡單說明】 第1圖係基材之部分的橫截面概要圖。 第2圖係根據本發明研磨基材部分之系統的示例性實 施例的概要平面圖。 第3圖係描述根據本發明研磨基材之研磨設備實施例 的概要透視圖。It should be understood that the edge grinding apparatus of the present invention described herein can be used in addition to those suitable for beveling and edge grinding and/or removal of films on substrates. Further, it will be apparent to those skilled in the art that the devices described herein can be used to grind and/or remove films on the edges of substrates supported in any direction, such as horizontal, vertical, tilt, and the like. Moreover, it should be understood that while only embodiments for cleaning a circular substrate are disclosed, the present invention can be modified to clean substrates having other shapes, such as glass or polymer sheets for flat panel displays. Again, while the upper display handles a single substrate by the device, in some embodiments t, the device can process a plurality of substrates simultaneously. The foregoing merely discloses exemplary embodiments of the invention. Modifications of the above-described apparatus and methods within the scope of the invention are readily apparent to those skilled in the art. For example, other backing sheets having other contours, such as elliptical, hexagonal, or other contours, can be applied. Therefore, the invention has been described with reference to the exemplary embodiments thereof, and it should be understood that other embodiments may be within the spirit and scope of the invention as defined by the appended claims. 17 200908123 [Simple description of the drawings] Fig. 1 is a schematic cross-sectional view of a portion of a substrate. Figure 2 is a schematic plan view of an exemplary embodiment of a system for abrading a substrate portion in accordance with the present invention. Figure 3 is a schematic perspective view depicting an embodiment of a grinding apparatus for abrading a substrate in accordance with the present invention.
第4圖係根據本發明具有背板之研磨設備示範性實施 例的概要透視圖。 第5 A圖係描述根據本發明之背板示例性實施例的概 要橫截面圖。 第5 B圖係根據本發明顯示於第5 A圖中之背板的圖 示。 第6 A圖係描述根據本發明之背板另一示例性實施例 的概要核截面圖。 第6B圖係根據本發明顯示於第6A圖中之背板的圖 示。 第7圖係描述根據本發明之背板額外示例性實施例的 概要橫截面圖。 第 8圖係描述本發明之示例性實施例的應用之流程 圖。 【主要元件符號說明】 100 基材 102 > 102' 主 要 表面 1 04 邊緣 106、 106, 元 件 18 200908123 108、 10 8’ 排除區 110 外邊 112、 114 斜角 116 薄膜 200 基材研磨系統 202 ' 3 14 204 ' 3 00 研磨設備 206 控制 302 基材傳動器 304 基座 306 支撐件 308 中心 3 10 研磨臂 3 12 框架 3 16、 500 、 600 、 604 背板 3 18 襯墊 320 研磨帶 322、 324 3 26、 328 捲轴傳動器 400、 502 402 第一平坦區域 404 第二 4 0 6 ' 602a、602b 相切接點 606 平坦區域 研磨頭 器 捲轴 表面 彎曲區域Figure 4 is a schematic perspective view of an exemplary embodiment of a polishing apparatus having a backing plate in accordance with the present invention. Fig. 5A is a schematic cross-sectional view showing an exemplary embodiment of a back sheet according to the present invention. Figure 5B is an illustration of the backsheet shown in Figure 5A in accordance with the present invention. Fig. 6A is a schematic cross-sectional view showing another exemplary embodiment of a back sheet according to the present invention. Fig. 6B is a view showing the back sheet shown in Fig. 6A according to the present invention. Figure 7 is a schematic cross-sectional view depicting an additional exemplary embodiment of a backsheet in accordance with the present invention. Figure 8 is a flow chart depicting an application of an exemplary embodiment of the present invention. [Main component symbol description] 100 substrate 102 > 102' main surface 1 04 edge 106, 106, element 18 200908123 108, 10 8' exclusion area 110 outer edge 112, 114 bevel 116 film 200 substrate polishing system 202 ' 3 14 204 ' 3 00 Grinding device 206 Control 302 Substrate actuator 304 Base 306 Support 308 Center 3 10 Grinding arm 3 12 Frame 3 16 , 500 , 600 , 604 Back plate 3 18 Pad 320 Grinding tape 322 , 324 3 26, 328 reel drive 400, 502 402 first flat region 404 second 4 0 6 ' 602a, 602b tangential joint 606 flat region grinding head reel surface bending region
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