TW200812111A - Method of manufacturing group-III nitride semiconductor light-emitting element - Google Patents
Method of manufacturing group-III nitride semiconductor light-emitting element Download PDFInfo
- Publication number
- TW200812111A TW200812111A TW096113828A TW96113828A TW200812111A TW 200812111 A TW200812111 A TW 200812111A TW 096113828 A TW096113828 A TW 096113828A TW 96113828 A TW96113828 A TW 96113828A TW 200812111 A TW200812111 A TW 200812111A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- semiconductor layer
- light
- type semiconductor
- growth
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006115791A JP2007288052A (ja) | 2006-04-19 | 2006-04-19 | Iii族窒化物半導体発光素子の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200812111A true TW200812111A (en) | 2008-03-01 |
Family
ID=38625153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096113828A TW200812111A (en) | 2006-04-19 | 2007-04-19 | Method of manufacturing group-III nitride semiconductor light-emitting element |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2007288052A (ja) |
TW (1) | TW200812111A (ja) |
WO (1) | WO2007123262A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5042781B2 (ja) | 2007-11-06 | 2012-10-03 | 株式会社ミツトヨ | 周波数安定化レーザ装置及びレーザ周波数安定化方法 |
JP2011009502A (ja) * | 2009-06-26 | 2011-01-13 | Showa Denko Kk | 発光素子、その製造方法、ランプ、電子機器及び機械装置 |
WO2012140844A1 (ja) * | 2011-04-12 | 2012-10-18 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光素子およびその製造方法 |
JP7149486B2 (ja) | 2020-04-21 | 2022-10-07 | 日亜化学工業株式会社 | 発光素子の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3816176B2 (ja) * | 1996-02-23 | 2006-08-30 | 富士通株式会社 | 半導体発光素子及び光半導体装置 |
JP4166885B2 (ja) * | 1998-05-18 | 2008-10-15 | 富士通株式会社 | 光半導体装置およびその製造方法 |
JP2003023179A (ja) * | 2001-07-06 | 2003-01-24 | Ricoh Co Ltd | p型III族窒化物半導体およびその作製方法および半導体装置およびその作製方法 |
JP4609917B2 (ja) * | 2002-04-18 | 2011-01-12 | 昭和電工株式会社 | 窒化アルミニウムガリウム層の製造方法、iii族窒化物半導体発光素子の製造方法およびiii族窒化物半導体発光素子 |
JP2004214337A (ja) * | 2002-12-27 | 2004-07-29 | Nichia Chem Ind Ltd | 窒化物半導体発光素子 |
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2006
- 2006-04-19 JP JP2006115791A patent/JP2007288052A/ja active Pending
-
2007
- 2007-04-19 WO PCT/JP2007/059001 patent/WO2007123262A1/ja active Application Filing
- 2007-04-19 TW TW096113828A patent/TW200812111A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007123262A1 (ja) | 2007-11-01 |
JP2007288052A (ja) | 2007-11-01 |
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