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TW200812111A - Method of manufacturing group-III nitride semiconductor light-emitting element - Google Patents

Method of manufacturing group-III nitride semiconductor light-emitting element Download PDF

Info

Publication number
TW200812111A
TW200812111A TW096113828A TW96113828A TW200812111A TW 200812111 A TW200812111 A TW 200812111A TW 096113828 A TW096113828 A TW 096113828A TW 96113828 A TW96113828 A TW 96113828A TW 200812111 A TW200812111 A TW 200812111A
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor layer
light
type semiconductor
growth
Prior art date
Application number
TW096113828A
Other languages
English (en)
Chinese (zh)
Inventor
Tetsuo Sakurai
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200812111A publication Critical patent/TW200812111A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Led Devices (AREA)
TW096113828A 2006-04-19 2007-04-19 Method of manufacturing group-III nitride semiconductor light-emitting element TW200812111A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006115791A JP2007288052A (ja) 2006-04-19 2006-04-19 Iii族窒化物半導体発光素子の製造方法

Publications (1)

Publication Number Publication Date
TW200812111A true TW200812111A (en) 2008-03-01

Family

ID=38625153

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096113828A TW200812111A (en) 2006-04-19 2007-04-19 Method of manufacturing group-III nitride semiconductor light-emitting element

Country Status (3)

Country Link
JP (1) JP2007288052A (ja)
TW (1) TW200812111A (ja)
WO (1) WO2007123262A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5042781B2 (ja) 2007-11-06 2012-10-03 株式会社ミツトヨ 周波数安定化レーザ装置及びレーザ周波数安定化方法
JP2011009502A (ja) * 2009-06-26 2011-01-13 Showa Denko Kk 発光素子、その製造方法、ランプ、電子機器及び機械装置
WO2012140844A1 (ja) * 2011-04-12 2012-10-18 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子およびその製造方法
JP7149486B2 (ja) 2020-04-21 2022-10-07 日亜化学工業株式会社 発光素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3816176B2 (ja) * 1996-02-23 2006-08-30 富士通株式会社 半導体発光素子及び光半導体装置
JP4166885B2 (ja) * 1998-05-18 2008-10-15 富士通株式会社 光半導体装置およびその製造方法
JP2003023179A (ja) * 2001-07-06 2003-01-24 Ricoh Co Ltd p型III族窒化物半導体およびその作製方法および半導体装置およびその作製方法
JP4609917B2 (ja) * 2002-04-18 2011-01-12 昭和電工株式会社 窒化アルミニウムガリウム層の製造方法、iii族窒化物半導体発光素子の製造方法およびiii族窒化物半導体発光素子
JP2004214337A (ja) * 2002-12-27 2004-07-29 Nichia Chem Ind Ltd 窒化物半導体発光素子

Also Published As

Publication number Publication date
WO2007123262A1 (ja) 2007-11-01
JP2007288052A (ja) 2007-11-01

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