200811932 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種阻層移除裝置及移除阻層之方法， 除尤 【先前技術】200811932 IX. Description of the Invention: [Technical Field] The present invention relates to a resist layer removing device and a method for removing a resist layer, in addition to the prior art
10 15 隨著電子產㈣蓬勃發展’電子產品亦逐漸進入多功 此、而性能的研發方向。電子產品趨向小尺寸 子電路，乃勢不可播之市場主流。為獲得高密度化;= 細線路(fme Hne)或微細間距（fine pheh)，利用圖案化阻層 ^仃選擇性_或以圖案化電鑛方式製造圖案化線路，係 二"、要之製在圖案化線路形成後，尚須移除製程中所 之圖案化阻層，才能獲得預期的線路圖案。 "移除阻層之方法有破碎型剝膜製程與溶解型剝膜 ^兩種。其中當實施破碎型剝膜製程時，使用之剝膜劑 '^從阻層表面形成裂縫，於裂縫處滲透進人阻層，接著 將阻層從底料離起來，繼續分解碎裂之。其以往通常使 用於封裝基板表面阻層移除製程。破碎型剝膜製程，如圖$ 流程圖所示’首先提供—待剝阻層之基板，接著對待剝阻 層之基板施以破碎型剝膜製程。接下來水洗處理。 烘乾基板。 另一習知移除阻層之方法，以往通常使用於晶圓端表 面阻層移除製程，近來也已漸漸運用於封裝基板製造業。 20 200811932 溶解型剝膜製程之作用機制，係為剝膜劑直接在阻層表 ^ 面，漸進地將阻層溶解殆盡。其製程步驟如圖2流程圖所 示，首先提供一待剝阻層之基板，接著對待剝阻層之基板 施以溶解型剝膜製程。接下來水洗處理。最後，烘乾基板。 5 如前所述之阻層去除製程運用於封裝基板製造業，於 圖案化線路製程中微細線路（fine line)或微細間距饵狀 pitch)中，兩線寬中間之間隙底部，易為阻層分解後形之殘 潰（foot scum)所駐足，如去除不淨則會有基板可靠度的問 Φ' 題，但如全程單獨選擇使用破碎型剝膜製程所耗費的成本 10 及時間較少，但線路之間間隙底部阻層去除不完全，又或 全程單獨選擇使用溶解型剝膜製程則所耗時成本及時間較 多，但不符合大量生產之經濟規模所需，如前所述的問題 即為封裝基板界所急需解決的問題。 15 【發明内容】 鑑於上述習知之缺點，本發明係提供一種阻層移除裝 馨 置，係用以對一包括有至少一内層線路層及於表面形成有 圖案化阻層之基板進行阻層移除，此阻層移除裝置包括： 一破碎型剝除單元、一溶解型剝除單元、——第一水洗單元、 20 一第一乾燥單元以及一輸送單元。破碎型剝除單元係用以 破碎此基板表面之阻層，並且移除該阻層。溶解型剝除單 元係連接於破碎剝除單元之後，用以溶解殘留在基板表面 之阻層。第一水洗單元係連接於溶解型剝除單元之後，用 以水洗基板，以完全移除基板上之阻層及藥液。第一乾燥 6 200811932 單元係連揍於第一水洗單元之後，用以乾燥水洗後之基 板。輸送單元係分別與破碎型剝除單元、溶解型剝除單元、 第一水洗單元及第一乾燥單元相連接，並以連續傳送之方 式將基板依序傳送至破碎型剝除單元、溶解型剝除單元、 第一水洗單元及第一乾燥單元。 上述本發明的阻層移除裝置中，可另外包括一第二水 洗單元，此第二水洗單元係可連接於破碎型剝除單元之後 及溶解型剝除單元之前，用以水洗基板，以移除破碎後之 阻層。 10 在上述本發明包括有第二水洗單元或不包括第二水洗 單元的阻層移除裝置中，皆復可包括：一蝕刻單元、一第 三水洗單元以及一第二乾燥單元。蝕刻單元係連接於第一 乾燥單元之後，用以蝕刻基板表面之殘餘物。第三水洗單 元係連接於餘刻單元之後，用以清洗基板之殘餘物及前述 15 I虫刻單元中之藥液。第二乾燥單元係連接於第三水洗單元 之後，用以乾燥水洗後之基板。此外，在基板表面上的殘 > 餘物係為晶種層。 又’在上述本發明包括有第二水洗單元或不包括第二 f洗單元的阻層移除裝置中’係可移除第—乾燥單元，使 2〇 第一水洗單元直接與蝕刻單元連接。 在此，本發明所述之各單元，其不限定於各種形式， 只要可達成其目的之設備均可使用，例如可為一喷霧 喷射式之儀器將化學藥液或水噴麗至基板表面，亦或 裝有可容置溶液的化學槽等類似之容器。 … 200811932 依據上述本發明之阻層移除裝置，例如可由下述但不 限於此之步驟以移除阻層。 因此，本發明更提供本發明提供一種移除阻層之方 法，其步驟包含：（A)提供一表面形成有一圖案化阻層之基 5 板，其中該基板係具有至少一内層線路層；（B)將表面具有 該圖案化阻層之基板以一破碎型剝膜劑破碎阻層；（C)將表 面具有殘餘圖案化阻層之基板以一溶解型剝膜劑溶解殘餘 之阻層；（D)以水洗清潔此基板；最後，（E)烘乾此基板。其 中，經破碎型剝膜後，金屬層間隙中仍有未完全清除之原阻 10 層根部留下之殘渣（foot scum)與阻層分解後形成之殘渣（foot scum)所殘留，接著利用溶解型剝膜劑進行溶解型剝膜處理。 故本發明之移除阻層之方法，俾能完全清除雜質（impurity)、 阻層殘留物（residue)與殘渣（foot scum)。 根據上述本發明之移除阻層之方法無限制，較佳地更包 15 含如下步驟：(B1)於破碎阻層之後，且於溶解阻層之前，以 水洗清潔基板。 丨 根據上述本發明之移除阻層之方法無限制，可於包括有 步驟(B1)或不包括有步驟（B1)的方法中，較佳地更包含如下步 驟：（F)於烘乾之後，將基板以一蝕刻液進行蝕刻。（G)再以 20 水洗清潔基板以及（H)烘乾此基板。 根據上述本發明之移除阻層之方法無限制，可於包括有 步驟(B1)或不包括有步驟(B1)的方法中，較佳地更包含如下步 驟：（D1)於水洗之後，以及烘乾之前，將基板以一蝕刻液 進行蝕刻；以及（D2)以水洗清潔基板。 200811932 根據上述本發明之移除阻層之方法，其中本發明所述之 破碎型剝膜劑與溶解型剝膜劑中，其使用方式無限制，較佳 地係以喷灑或浸泡方式加諸於基板。此外，使用的基板係可 為晶圓或電路板。 根據上述本發明之移除阻層之方法，其中本發明所述之 阻層使用之材料無限制，較佳地係為乾膜或液態光阻。 根據上述本發明之移除阻層之方法，其中本發明所述之 内層線路層使用之材料無限制，較佳地係為銅、錫、鎳、鉻、 鈦、銅-鉻合金或錫-鉛合金。 根據上述本發明之移除阻層之方法，其中本發明所述之 破碎型剝膜劑無限制，較佳地為包含烷醇胺類、聚伸烷基聚 胺類、脂族胺類、環狀胺類、丙硐、N-曱基吡咯酮W —Methyl_ 2 Pyrrolidone，NMP)、二曱基亞楓(Dimethyl Sulfoxide，DMSO ) 或氰基乙氧基乙醇（Aminoethoxy Ethanol)等有機溶液。 根據上述本發明之移除阻層之方法，其中本發明所述之 〉谷解型剝膜劑無限制，較佳地係為硫酸與雙氧水混合之溶 液、氯氧化納或氫氧化鉀等無機溶液。根據上述本發明之移 除阻層之方法，其中本發明所述之蝕刻液係用以蝕刻基板表 面之晶種層。 【實施方式】 以下係藉由特定的具體實施例說明本發明之實施方 式’热習此技藝之人式可由本說明書所揭示之内容輕易地 了解本發明之其他優點與功效。本發明亦可藉由其他不同 9 200811932 的具體實施例加以施行或應用，本說明書中的各項細節亦 可基於不同觀點與應用，在不悖離本發明之精神下進行各 種修飾與變更。 實施例1 5 如圖3所示，係為本發明之一阻層移除裝置示意圖，此 阻層移除裝置係用以對一包括有至少一内層線路層（圖未示） 及於表面形成有圖案化阻層（圖未示）之基板21進行阻層移 除，其包括：一破碎型剝除單元12、一溶解型剝除單元13、 一第一水洗單元14、一第一乾燥單元15以及一輸送單元 10 16。溶解型剝除單元13係連接於破碎剝除單元12之後。 第一水洗單元14係連接於溶解型剝除單元13之後。第一 乾燥單元15係連接於第一水洗單元14之後。輸送單元16 則分別與破碎型剝除單元12、溶解型剝除單元13、第一水 洗單元14及第一乾燥單元15相連接，並以連續傳送之方 15 式將基板21依序傳送至破碎型剝除單元12、溶解型剝除單 元13、第一水洗單元14及第一乾燥單元15。 ，因此，首先進行步驟A，在承載單元11上承載一待剝阻 層之基板21，基板21具有至少一内層線路層且基板表面有 圖案化阻層。本實例中，使用之基板21為電路板，線路層材 20 料為銅，阻層材料為乾膜。 接著進行步驟B，將基板21輸送至破碎型剝除單元12 中，此破碎型剝除單元12具有破碎型剝膜劑以破碎阻層。 本實例中，使用之破碎型剝膜劑為有機溶液二甲基亞楓 (Dimethyl Sulfoxide，DMSO )，使用方式為噴灑式加諸於基 200811932 板0 接下來進行步驟C，將矣；目女&固也 竹表面具有該圖案化阻層之 輸送至溶解型剝除單元13 扳21 中，、，、/谷解型剝膜劑，以溶解矜 餘之阻層。本實例中，係 解歹欠 510 15 With the development of electronic products (4), electronic products have gradually entered the direction of multi-functional and performance research and development. Electronic products tend to be small-sized sub-circuits, which is the mainstream of the market. In order to obtain high density; = fine line (fme Hne) or fine pitch (fine pheh), use patterned resist layer _ selectivity _ or patterned electric line to make patterned lines, the second two After the patterning line is formed, the patterned resist layer in the process must be removed to obtain the desired line pattern. " The method of removing the resist layer has two methods: a crushing type stripping process and a dissolution type stripping film. When the crushing type stripping process is carried out, the stripping agent used “^ forms a crack from the surface of the resist layer, penetrates into the crack layer at the crack, and then separates the resist layer from the bottom material, and continues to decompose and break. It used to be used to remove the surface resist layer removal process on a package substrate. The crushing type stripping process, as shown in the flow chart of Fig. 1, first provides the substrate to be stripped, and then applies a fracture-type stripping process to the substrate to be stripped. Then wash it. Dry the substrate. Another conventional method for removing a resist layer has conventionally been used in wafer end surface resist removal processes, and has recently been used in package substrate manufacturing. 20 200811932 The mechanism of action of the dissolving stripping process is that the stripping agent is directly on the surface of the resist layer, and the resist layer is gradually dissolved. The process steps are as shown in the flow chart of Fig. 2. First, a substrate to be stripped is provided, and then the substrate to be stripped is subjected to a dissolution stripping process. Then wash it. Finally, the substrate is dried. 5 The resist layer removal process as described above is applied to the package substrate manufacturing industry. In the pattern line process, the fine line or the fine pitch bait pitch, the bottom of the gap between the two lines is easy to be the resist layer. After the decomposition, the foot scum is stopped. If the removal is not clean, there will be a problem of the reliability of the substrate. However, if the cost of using the crushing and stripping process is 10, and the time is small, However, the removal of the barrier layer at the bottom of the gap between the lines is incomplete, or the use of the dissolution-type stripping process alone or the whole process takes time and cost, but does not meet the economic scale of mass production, as described above. This is an urgent problem to be solved in the packaging substrate industry. 15 SUMMARY OF THE INVENTION In view of the above-mentioned disadvantages, the present invention provides a resistive layer removing device for resisting a substrate including at least one inner layer wiring layer and a patterned resist layer formed on the surface thereof. Removal, the resist removal device comprises: a crushing stripping unit, a dissolution stripping unit, a first water washing unit, a first drying unit and a conveying unit. The crushing stripping unit is used to break the resist layer on the surface of the substrate and remove the resist layer. The dissolution stripping unit is attached to the fracture stripping unit to dissolve the barrier layer remaining on the surface of the substrate. After the first water washing unit is connected to the dissolution stripping unit, the substrate is washed with water to completely remove the resist layer and the chemical solution on the substrate. First Drying 6 200811932 The unit is connected to the first water washing unit to dry the washed substrate. The conveying unit is respectively connected with the crushing stripping unit, the dissolution stripping unit, the first water washing unit and the first drying unit, and sequentially conveys the substrate to the crushing stripping unit and the dissolved stripping in a continuous transfer manner. In addition to the unit, the first water washing unit and the first drying unit. The above-mentioned resist layer removing device of the present invention may further comprise a second water washing unit which is connectable to the crushing type stripping unit and before the dissolving stripping unit for washing the substrate to be moved. In addition to the broken barrier layer. In the above-mentioned invention, the second layer washing unit or the layer removing unit not including the second water washing unit may further include: an etching unit, a third water washing unit, and a second drying unit. The etching unit is connected to the first drying unit to etch the residue on the surface of the substrate. The third water washing unit is connected to the residual unit to clean the residue of the substrate and the liquid medicine in the aforementioned insect cell. The second drying unit is connected to the third water washing unit to dry the washed substrate. Further, the residue > on the surface of the substrate is a seed layer. Further, in the above-described invention, the second water washing unit or the resist layer removing device not including the second f washing unit is used to remove the first drying unit, so that the second water washing unit is directly connected to the etching unit. Here, the units of the present invention are not limited to various forms, and any apparatus that can achieve the purpose can be used. For example, a spray-jet type instrument can spray chemical liquid or water onto the surface of the substrate. Or a chemical tank containing a solution that can accommodate a solution, or the like. According to the above-described resist layer removing device of the present invention, for example, the following steps are possible, but not limited thereto, to remove the resist layer. Therefore, the present invention further provides a method for removing a resist layer, the method comprising the steps of: (A) providing a substrate 5 having a patterned resist layer formed thereon, wherein the substrate has at least one inner layer; B) crushing the substrate having the patterned resist layer on the surface with a crushing type film stripping agent; (C) dissolving the residual resist layer by a substrate having a residual patterned resist layer on the surface; D) cleaning the substrate with water washing; finally, (E) drying the substrate. Among them, after the fracture-type stripping, the residue remaining in the root layer of the original layer of the original layer is not completely removed (foot scum) and the residue formed after the decomposition of the barrier layer (foot scum) remains, and then dissolved. The type of stripping agent is subjected to a dissolution type stripping treatment. Therefore, the method of removing the resist layer of the present invention can completely remove impurities, residue and foot scum. The method for removing the resist layer according to the present invention described above is not limited, and preferably comprises the following steps: (B1) after the barrier layer is broken, and the substrate is cleaned by washing with water before dissolving the resist layer. The method for removing the resist layer according to the present invention described above is not limited, and may include the following steps in the method including the step (B1) or the step (B1): (F) after drying The substrate is etched with an etchant. (G) Clean the substrate with 20 water washes and (H) dry the substrate. The method for removing the resist layer according to the present invention described above is not limited, and may include the following steps in the method including the step (B1) or the step (B1); (D1) after the water washing, and The substrate is etched with an etchant before drying; and (D2) is cleaned with water. 200811932 According to the above method for removing a resist layer of the present invention, wherein the crushing type stripping agent and the dissolving type stripping agent of the present invention are used in a non-limiting manner, preferably by spraying or soaking. On the substrate. Further, the substrate used may be a wafer or a circuit board. According to the above method for removing a resist layer of the present invention, the material for use in the resist layer of the present invention is not limited, and is preferably a dry film or a liquid photoresist. According to the above method for removing a resist layer of the present invention, the material for using the inner layer circuit layer of the present invention is not limited, and is preferably copper, tin, nickel, chromium, titanium, copper-chromium alloy or tin-lead. alloy. According to the above method for removing a resist layer of the present invention, the crushing type stripping agent of the present invention is not limited, and preferably comprises an alkanolamine, a polyalkylene polyamine, an aliphatic amine, and a ring. An organic solution such as an amine, a propanil, a N-mercaptopyrrolone W-Methyl 2 Pyrrolidone (NMP), a Dimethyl Sulfoxide (DMSO) or an Aminoethoxy Ethanol. According to the above method for removing a resist layer of the present invention, the gluten-type stripping agent of the present invention is not limited, and is preferably a solution of a mixture of sulfuric acid and hydrogen peroxide, an inorganic solution such as sodium oxychloride or potassium hydroxide. . According to the above method of removing a resist layer of the present invention, the etching liquid of the present invention is for etching a seed layer of a surface of a substrate. [Embodiment] The following describes the embodiments of the present invention by way of specific embodiments. Those skilled in the art can readily appreciate other advantages and advantages of the present invention from the disclosure of the present disclosure. The present invention may be carried out or applied by other specific embodiments of the present invention. The details of the present invention can be variously modified and changed without departing from the spirit and scope of the invention. Embodiment 1 5 is a schematic diagram of a resist layer removing device according to the present invention. The resist layer removing device is configured to include at least one inner layer circuit layer (not shown) and surface formation. The substrate 21 having a patterned resist layer (not shown) is subjected to resist layer removal, comprising: a crushing stripping unit 12, a dissolution stripping unit 13, a first water washing unit 14, and a first drying unit. 15 and a transport unit 10 16 . The dissolution type stripping unit 13 is connected to the crush stripping unit 12. The first water washing unit 14 is connected to the dissolution type stripping unit 13. The first drying unit 15 is connected after the first water washing unit 14. The conveying unit 16 is connected to the crushing type stripping unit 12, the dissolution type stripping unit 13, the first water washing unit 14, and the first drying unit 15, respectively, and sequentially transports the substrate 21 to the broken body in a continuous transfer manner. The stripping unit 12, the dissolution stripping unit 13, the first water washing unit 14, and the first drying unit 15. Therefore, first, step A is performed to carry a substrate 21 to be stripped on the carrying unit 11, the substrate 21 has at least one inner wiring layer and the substrate surface has a patterned resist layer. In the present example, the substrate 21 used is a circuit board, the circuit layer 20 is made of copper, and the resist material is a dry film. Next, in step B, the substrate 21 is conveyed to the crushing type stripping unit 12, which has a crushing type stripping agent to break the resist layer. In this example, the crushing type stripping agent used is an organic solution Dimethyl Sulfoxide (DMSO), which is sprayed and applied to the base 200811932 board 0. Next, step C is carried out; The surface of the solid bamboo has the patterned resist layer and is transported to the dissolving and stripping unit 13 to remove the remaining resist layer. In this example, the system is owed to 5
10 、 用之浴解型剝膜劑為無機溶液氫氧 化鈉，使用方式為浸泡式加諸於基板21。 飞虱 接著進行步驟D，將基板21輸送至第一水洗單元μ中 施以水洗，以完全移除基板上之阻層及藥液。接下來進行步 驟E，再將基板21輸送至第一乾燥單元15中，加以烘乾之。 最後’可移除在基板21上之阻層。 實施例2 如圖4所示，係為本發明另一移除阻層裝置示意圖。本 實施例之裝置，係大致上如實施例1之裝置相同，但是不同 的是’本實施例在破碎型剝除單元12之後以及溶解型剝除單 元13之前係增加了一第二水洗單元17。 因此，在本實施例移除阻層的方法中，其係亦如實施例 1相同，但是在經由破碎型剝除單元12後，貝ij通過第二水洗 單凡加以水洗基板21，清洗之後再進入溶解型剝除單元 13 °之後的步驟則與實施例1相同。 實施例3 請參考圖5,係為本實施例之一阻層移除裝置示意圖。 其裝置係為實施例1之裝置之後再依序連接一蝕刻單元18、 一第三水洗單元19以及一第二乾燥單元20。即蝕刻單元 18係連接於第一乾燥單元15之後。第三水洗單元19係連 接於餘刻單元18之後。第二乾燥單元20係連接於第三水 11 200811932 洗單元19。 ‘ 移除阻層的方法係在完成實施例1之後，再將基板21 輸送至蝕刻單元18中，將蝕刻不需要的殘餘物，此殘餘物係 為基板表面之晶種層。之後將基板21輸送至第三水洗單元 5 19，將蝕刻過之基板施以水洗，以洗淨基板表面之殘餘物及 蝕刻藥液。最後，再將基板21輸送至第二乾燥單元20進行 再次烘乾。而完成移除阻層的步驟。 實施例4 • 請參考圖6，係為本發明之一阻層移除裝置示意圖。本 10 實施例與實施例3大致相同，但本實施例係為於實施例3的 裝置中，在破碎型剝除單元12之後與溶解型剝除單元13之 前連接一第二水洗單元17。亦即，在經由破碎型剝除單元 12後，則通過第二水洗單元17加以水洗基板21，清洗之後 再進入溶解型剝除單元13。其餘步驟皆與實施例3相同。而 15 完成移除阻層的步驟。 實施例5 # 請參考圖7，係為本實施例之一阻層移除裝置示意圖。 本實施例的裝置係與實施例3大致相同，但是，不同的是， 本實施例並不具有實施例3的第一乾燥單元。本實施例係將 20 第一水洗單元14與蝕刻單元18直接連接。亦即，基板21離 開第一水洗單元14之後直接進入蝕刻單元18進行蝕刻的動 作，其餘步驟則與實施例3相同。 實施例ό 請參考圖8,係為本實施例之一阻層移除裝置示意圖。 12 200811932 本實施例與實施例5大致相同，料同的是，本實施例係為 於實施例5的裝置中，在破碎型剝除單元12與溶解型剝除單 元13之間連接了 - f二水洗單元17，先水洗基板21，清洗 之進人溶解型剝除單元13，其餘步驟職實施例5相 同。最後，完成移除阻層的步驟。 經由則述之實施製程係可避免全程單獨選擇使用破 型剝膜製程所耗費的成本及時間較少，但線路之間 PP層去除不凡王，又或全程單獨選擇使用溶解型製 程則所耗時成本及時間較多，但不符合大量^ 模所需的問題。 <、、二展規 上述實施例僅係為了方便說明而舉例而已所 主張之_範圍自應以中請專利範圍所述為準，㈣ 於上述實施例。 限 15 20 【圖式簡單說明】 圖1係本習知破碎型剝膜製程流程圖之圖示。 圖2係本習知溶解型剝膜製程流程圖之圖示。 圖0 圖3〜8係本發明較佳實施例之阻層移除裝置示意 【主要元件符號說明】 21基板12破碎型剝除單元14第—尤、去„ . 13溶解型剝除單元 16 欠洗早71 15第一乾燥單元 19弟二水洗單元 6輸达早兀 18蝕刻單月 17 弟一水洗單元 20第二乾燥單元 1310. The bath-type stripping agent is an inorganic solution sodium hydroxide, which is applied to the substrate 21 by immersion. Flying hopper Next, in step D, the substrate 21 is transported to the first water washing unit μ for water washing to completely remove the resist layer and the chemical liquid on the substrate. Next, in step E, the substrate 21 is transferred to the first drying unit 15 and dried. Finally, the resist layer on the substrate 21 can be removed. Embodiment 2 As shown in FIG. 4, it is a schematic diagram of another removal layer device of the present invention. The apparatus of the present embodiment is substantially the same as the apparatus of Embodiment 1, but the difference is that the present embodiment adds a second water washing unit 17 after the crushing type stripping unit 12 and before the dissolution type stripping unit 13. . Therefore, in the method of removing the resist layer in this embodiment, it is also the same as in Embodiment 1, but after passing through the crushing type stripping unit 12, the shell ij is washed with the second water to wash the substrate 21, and then washed. The step after entering the dissolution stripping unit 13 ° is the same as in the first embodiment. Embodiment 3 Please refer to FIG. 5, which is a schematic diagram of a resist layer removing device of this embodiment. The apparatus is the apparatus of the first embodiment, and then an etching unit 18, a third water washing unit 19 and a second drying unit 20 are sequentially connected. That is, the etching unit 18 is connected after the first drying unit 15. The third water washing unit 19 is connected after the remaining unit 18. The second drying unit 20 is connected to the third water 11 200811932 washing unit 19. The method of removing the resist layer is after the completion of Embodiment 1, and the substrate 21 is transferred to the etching unit 18, and an unnecessary residue which is a seed layer of the substrate surface is etched. Thereafter, the substrate 21 is transported to the third water washing unit 5 19, and the etched substrate is washed with water to wash the residue on the surface of the substrate and etch the chemical solution. Finally, the substrate 21 is transported to the second drying unit 20 for drying again. The step of removing the resist layer is completed. Embodiment 4 Please refer to FIG. 6, which is a schematic diagram of a resist layer removing device of the present invention. The present embodiment is substantially the same as the third embodiment, but in the embodiment, in the apparatus of the third embodiment, a second water washing unit 17 is connected to the dissolution type stripping unit 12 after the crush type stripping unit 12. That is, after passing through the crushing type stripping unit 12, the substrate 21 is washed with water by the second water washing unit 17, and after washing, it enters the dissolution type stripping unit 13. The remaining steps are the same as in Embodiment 3. And 15 complete the step of removing the barrier layer. Embodiment 5 # Please refer to FIG. 7 , which is a schematic diagram of a resist layer removing device of this embodiment. The apparatus of this embodiment is substantially the same as that of Embodiment 3, except that this embodiment does not have the first drying unit of Embodiment 3. In this embodiment, the first water washing unit 14 and the etching unit 18 are directly connected. That is, after the substrate 21 is separated from the first water washing unit 14, it directly enters the etching unit 18 for etching, and the remaining steps are the same as in the third embodiment. Embodiment ό Please refer to FIG. 8 , which is a schematic diagram of a resist layer removing device of this embodiment. 12 200811932 This embodiment is substantially the same as the embodiment 5, and it is the same as in the apparatus of the embodiment 5 that the -f stripping unit 12 and the dissolution type stripping unit 13 are connected to -f The second water washing unit 17 first washes the substrate 21, and cleans it into the human dissolution type stripping unit 13, and the rest of the steps are the same as in the fifth embodiment. Finally, the step of removing the resist layer is completed. By implementing the process system, it is possible to avoid the cost and time required to separately select and use the broken stripping process, but it is time consuming to remove the extraordinary layer of the PP layer between the lines, or to separately select the use of the dissolved process. There are more costs and time, but it does not meet the problems required by a large number of models. < </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Limit 15 20 [Simple description of the drawings] Fig. 1 is a diagram showing the flow chart of the conventional crushing type stripping process. 2 is a graphical representation of a flow chart of the conventional dissolution stripping process. FIG. 3 to FIG. 3 to FIG. 8 are schematic diagrams of a resist layer removing device according to a preferred embodiment of the present invention. [Main component symbol description] 21 substrate 12 crushing stripping unit 14 - particularly, going to . 13 Dissolving stripping unit 16 Washing morning 71 15 first drying unit 19 brother two washing unit 6 transporting early 兀 18 etching single month 17 brother one washing unit 20 second drying unit 13