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TW200742039A - Method for fabricating IT-DRAM on bulk silicon - Google Patents

Method for fabricating IT-DRAM on bulk silicon

Info

Publication number
TW200742039A
TW200742039A TW096108777A TW96108777A TW200742039A TW 200742039 A TW200742039 A TW 200742039A TW 096108777 A TW096108777 A TW 096108777A TW 96108777 A TW96108777 A TW 96108777A TW 200742039 A TW200742039 A TW 200742039A
Authority
TW
Taiwan
Prior art keywords
bulk
dram
integrated circuit
fabricating
bulk silicon
Prior art date
Application number
TW096108777A
Other languages
English (en)
Other versions
TWI423422B (zh
Inventor
Albert Wu
Roawen Chen
Original Assignee
Marvell World Trade Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Marvell World Trade Ltd filed Critical Marvell World Trade Ltd
Publication of TW200742039A publication Critical patent/TW200742039A/zh
Application granted granted Critical
Publication of TWI423422B publication Critical patent/TWI423422B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
TW096108777A 2006-03-15 2007-03-14 在體矽上製造１ｔ-動態隨機存取記憶體之方法 TWI423422B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78247906P 2006-03-15 2006-03-15
US11/674,008 US8008137B2 (en) 2006-03-15 2007-02-12 Method for fabricating 1T-DRAM on bulk silicon

Publications (2)

Publication Number Publication Date
TW200742039A true TW200742039A (en) 2007-11-01
TWI423422B TWI423422B (zh) 2014-01-11

Family

ID=38077174

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108777A TWI423422B (zh) 2006-03-15 2007-03-14 在體矽上製造１ｔ-動態隨機存取記憶體之方法

Country Status (5)

Country Link
US (1) US8008137B2 (zh)
EP (1) EP1835535A3 (zh)
JP (1) JP2007294897A (zh)
CN (1) CN101038919B (zh)
TW (1) TWI423422B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8780602B2 (en) 2009-03-03 2014-07-15 Macronix International Co., Ltd. Integrated circuit self aligned 3D memory array and manufacturing method
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND

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KR100714401B1 (ko) * 2006-02-08 2007-05-04 삼성전자주식회사 적층된 트랜지스터를 구비하는 반도체 장치 및 그 형성방법
US8278167B2 (en) * 2008-12-18 2012-10-02 Micron Technology, Inc. Method and structure for integrating capacitor-less memory cell with logic
WO2011080998A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102812547B (zh) * 2010-03-19 2015-09-09 株式会社半导体能源研究所 半导体装置
KR101884031B1 (ko) * 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012008304A1 (en) * 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2012256821A (ja) * 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI670711B (zh) * 2010-09-14 2019-09-01 日商半導體能源研究所股份有限公司 記憶體裝置和半導體裝置
US9048142B2 (en) * 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2012102182A1 (en) * 2011-01-26 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI614747B (zh) 2011-01-26 2018-02-11 半導體能源研究所股份有限公司 記憶體裝置及半導體裝置
US9012993B2 (en) * 2011-07-22 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102446958B (zh) * 2011-11-08 2014-11-05 上海华力微电子有限公司 绝缘体上碳硅-锗硅异质结1t-dram结构及形成方法
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6081171B2 (ja) 2011-12-09 2017-02-15 株式会社半導体エネルギー研究所 記憶装置
JP6105266B2 (ja) 2011-12-15 2017-03-29 株式会社半導体エネルギー研究所 記憶装置
US9287257B2 (en) 2014-05-30 2016-03-15 Taiwan Semiconductor Manufacturing Company, Ltd. Power gating for three dimensional integrated circuits (3DIC)
US9281305B1 (en) * 2014-12-05 2016-03-08 National Applied Research Laboratories Transistor device structure
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP6901831B2 (ja) 2015-05-26 2021-07-14 株式会社半導体エネルギー研究所 メモリシステム、及び情報処理システム
US10147722B2 (en) 2016-08-12 2018-12-04 Renesas Electronics America Inc. Isolated circuit formed during back end of line process

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AU2003255254A1 (en) 2002-08-08 2004-02-25 Glenn J. Leedy Vertical system integration
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US7042756B2 (en) * 2002-10-18 2006-05-09 Viciciv Technology Configurable storage device
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JP4028499B2 (ja) * 2004-03-01 2007-12-26 株式会社東芝 半導体記憶装置
JP3898715B2 (ja) * 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
KR100655664B1 (ko) * 2005-07-08 2006-12-08 삼성전자주식회사 스택형 반도체 장치 및 그 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8780602B2 (en) 2009-03-03 2014-07-15 Macronix International Co., Ltd. Integrated circuit self aligned 3D memory array and manufacturing method
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND

Also Published As

Publication number Publication date
EP1835535A3 (en) 2010-07-14
US20070215906A1 (en) 2007-09-20
TWI423422B (zh) 2014-01-11
CN101038919B (zh) 2012-01-04
EP1835535A2 (en) 2007-09-19
JP2007294897A (ja) 2007-11-08
US8008137B2 (en) 2011-08-30
CN101038919A (zh) 2007-09-19

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees