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TW200738918A - Method for manufacturing defect-free silicon single crystal - Google Patents

Method for manufacturing defect-free silicon single crystal

Info

Publication number
TW200738918A
TW200738918A TW096109308A TW96109308A TW200738918A TW 200738918 A TW200738918 A TW 200738918A TW 096109308 A TW096109308 A TW 096109308A TW 96109308 A TW96109308 A TW 96109308A TW 200738918 A TW200738918 A TW 200738918A
Authority
TW
Taiwan
Prior art keywords
single crystal
silicon single
longitudinal direction
oxygen concentration
free silicon
Prior art date
Application number
TW096109308A
Other languages
Chinese (zh)
Other versions
TWI333988B (en
Inventor
Takashi Yokoyama
Toshiaki Saishoji
Toshirou Kotooka
Kazuyoshi Sakatani
Original Assignee
Sumco Techxiv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Publication of TW200738918A publication Critical patent/TW200738918A/en
Application granted granted Critical
Publication of TWI333988B publication Critical patent/TWI333988B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A method for controlling the temperature gradient on the side surface of a silicon single crystal, the height of a solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal is provided in order to manufacture a defect-free silicon single crystal whose oxygen concentration is controlled to a predetermined value rapidly and stably. By disposing a cylindrical cooler around the silicon single crystal, and adjusting the pulling speed of the silicon single crystal, the rotation speed of a crucible that stores molten silicon and the rotation speed of the silicon single crystal, and the output ratio of a multi-heater separated into at least two in the longitudinal direction of the silicon single crystal disposed around the crucible, the temperature gradient on the side surface, the height of the solid-liquid interface, and the oxygen concentration in the longitudinal direction of the silicon single crystal are controlled.
TW096109308A 2006-03-28 2007-03-19 Method for manufacturing defect-free silicon single crystal TW200738918A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006087388A JP2007261846A (en) 2006-03-28 2006-03-28 Method for manufacturing defect-free silicon single crystal

Publications (2)

Publication Number Publication Date
TW200738918A true TW200738918A (en) 2007-10-16
TWI333988B TWI333988B (en) 2010-12-01

Family

ID=38556999

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109308A TW200738918A (en) 2006-03-28 2007-03-19 Method for manufacturing defect-free silicon single crystal

Country Status (3)

Country Link
US (1) US7524371B2 (en)
JP (1) JP2007261846A (en)
TW (1) TW200738918A (en)

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TW200928018A (en) * 2007-12-21 2009-07-01 Green Energy Technology Inc Crystal-growing furnace with convectional cooling structure
KR100954291B1 (en) * 2008-01-21 2010-04-26 주식회사 실트론 High quality semiconductor single crystal ingot manufacturing apparatus and method
JP5131170B2 (en) * 2008-12-05 2013-01-30 信越半導体株式会社 Upper heater for single crystal production, single crystal production apparatus and single crystal production method
US8430867B2 (en) * 2010-03-12 2013-04-30 Kci Licensing, Inc. Reduced-pressure dressing connection pads, systems, and methods
JP2016519049A (en) * 2013-05-24 2016-06-30 サンエディソン・セミコンダクター・リミテッドＳｕｎＥｄｉｓｏｎ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｌｉｍｉｔｅｄ Method for producing low oxygen silicon ingot
CN103710742A (en) * 2013-12-30 2014-04-09 上海涌真机械有限公司 Single crystal furnace capable of improving czochralski-method single crystal growth speed
FR3028266B1 (en) * 2014-11-10 2016-12-23 Commissariat Energie Atomique PROCESS FOR MANUFACTURING ANY-TYPE MONOCRYSTALLINE SILICON BILGE WITH CONTROLLED OXYGEN THERMAL CONCENTRATION CONCENTRATION
KR101759003B1 (en) * 2015-12-30 2017-07-17 주식회사 엘지실트론 Method for Silicon Single Crystal
JP6579046B2 (en) 2016-06-17 2019-09-25 株式会社Sumco Method for producing silicon single crystal
JP6604338B2 (en) 2017-01-05 2019-11-13 株式会社Ｓｕｍｃｏ Silicon single crystal pulling condition calculation program, silicon single crystal hot zone improvement method, and silicon single crystal growth method
JP6729484B2 (en) * 2017-05-09 2020-07-22 株式会社Sumco Method for producing silicon single crystal
CN110735180A (en) * 2018-07-20 2020-01-31 上海新昇半导体科技有限公司 crystal pulling furnace
KR102461073B1 (en) * 2018-08-23 2022-10-28 가부시키가이샤 사무코 Silicon single crystal growth method
CN112080793B (en) * 2019-12-24 2022-06-03 徐州鑫晶半导体科技有限公司 System and method for temperature control in semiconductor single crystal growth
JP7439723B2 (en) * 2020-10-09 2024-02-28 株式会社Sumco How to grow silicon single crystals
CN112281210B (en) * 2020-10-10 2022-05-17 徐州鑫晶半导体科技有限公司 Crystal growth apparatus and crystal growth method
CN115233306B (en) * 2022-09-25 2023-02-03 杭州中欣晶圆半导体股份有限公司 Heating device and method capable of effectively reducing content of carbon impurities in silicon wafer
CN115287762B (en) * 2022-10-08 2022-12-09 中电化合物半导体有限公司 Crystal crystallization interface control device and silicon carbide crystal growth method
CN119465396B (en) * 2025-01-10 2025-03-14 碳方程半导体设备制造(山西)有限公司 Growth method for heterogeneous growth of large-size polycrystalline diamond

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JPH09227286A (en) * 1996-02-24 1997-09-02 Komatsu Electron Metals Co Ltd Apparatus for single crystal
JP3892496B2 (en) * 1996-04-22 2007-03-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Semiconductor single crystal manufacturing method
JP3228173B2 (en) * 1997-03-27 2001-11-12 住友金属工業株式会社 Single crystal manufacturing method
JP4158237B2 (en) 1998-08-24 2008-10-01 株式会社Ｓｕｍｃｏ Method for growing high-quality silicon single crystals
DE19912484A1 (en) * 1999-03-19 2000-09-28 Freiberger Compound Mat Gmbh Device for the production of single crystals
JP4357068B2 (en) * 1999-05-11 2009-11-04 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Single crystal ingot manufacturing apparatus and method
JP3595977B2 (en) * 1999-10-15 2004-12-02 株式会社日鉱マテリアルズ Crystal growth apparatus and single crystal manufacturing method
KR100786878B1 (en) * 2000-01-31 2007-12-20 신에쯔 한도타이 가부시키가이샤 Single crystal growing apparatus, single crystal manufacturing method and single crystal using the same device
TW588127B (en) * 2000-02-01 2004-05-21 Komatsu Denshi Kinzoku Kk Apparatus for pulling single crystal by CZ method
JP3573045B2 (en) 2000-02-08 2004-10-06 三菱住友シリコン株式会社 Manufacturing method of high quality silicon single crystal
JP3719088B2 (en) 2000-03-15 2005-11-24 株式会社Ｓｕｍｃｏ Single crystal growth method
JP4808832B2 (en) * 2000-03-23 2011-11-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Method for producing defect-free crystals
KR100899767B1 (en) * 2001-09-28 2009-05-27 사무코 테크시부 가부시키가이샤 Manufacturing apparatus, manufacturing method and single crystal ingot of single crystal semiconductor
JP4236243B2 (en) * 2002-10-31 2009-03-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Silicon wafer manufacturing method
KR100588425B1 (en) * 2003-03-27 2006-06-12 실트로닉 아게 Method for the Production of a Silicon Single Crystal, Silicon Single Crystal and Silicon Semiconductor Wafers with determined Defect Distributions

Also Published As

Publication number Publication date
JP2007261846A (en) 2007-10-11
US7524371B2 (en) 2009-04-28
TWI333988B (en) 2010-12-01
US20070227439A1 (en) 2007-10-04

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