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FR3028266B1 - PROCESS FOR MANUFACTURING ANY-TYPE MONOCRYSTALLINE SILICON BILGE WITH CONTROLLED OXYGEN THERMAL CONCENTRATION CONCENTRATION - Google Patents

PROCESS FOR MANUFACTURING ANY-TYPE MONOCRYSTALLINE SILICON BILGE WITH CONTROLLED OXYGEN THERMAL CONCENTRATION CONCENTRATION

Info

Publication number
FR3028266B1
FR3028266B1 FR1460855A FR1460855A FR3028266B1 FR 3028266 B1 FR3028266 B1 FR 3028266B1 FR 1460855 A FR1460855 A FR 1460855A FR 1460855 A FR1460855 A FR 1460855A FR 3028266 B1 FR3028266 B1 FR 3028266B1
Authority
FR
France
Prior art keywords
concentration
bilge
manufacturing
monocrystalline silicon
type monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1460855A
Other languages
French (fr)
Other versions
FR3028266A1 (en
Inventor
Sebastien Dubois
Adrien Danel
Jean-Paul Garandet
Benoit Martel
Jordi Veirman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1460855A priority Critical patent/FR3028266B1/en
Priority to PCT/EP2015/076101 priority patent/WO2016075092A1/en
Priority to EP15804688.8A priority patent/EP3218533A1/en
Priority to TW104137062A priority patent/TW201623703A/en
Publication of FR3028266A1 publication Critical patent/FR3028266A1/en
Application granted granted Critical
Publication of FR3028266B1 publication Critical patent/FR3028266B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
FR1460855A 2014-11-10 2014-11-10 PROCESS FOR MANUFACTURING ANY-TYPE MONOCRYSTALLINE SILICON BILGE WITH CONTROLLED OXYGEN THERMAL CONCENTRATION CONCENTRATION Expired - Fee Related FR3028266B1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1460855A FR3028266B1 (en) 2014-11-10 2014-11-10 PROCESS FOR MANUFACTURING ANY-TYPE MONOCRYSTALLINE SILICON BILGE WITH CONTROLLED OXYGEN THERMAL CONCENTRATION CONCENTRATION
PCT/EP2015/076101 WO2016075092A1 (en) 2014-11-10 2015-11-09 Method for manufacturing an n-type monocrystalline silicon ingot
EP15804688.8A EP3218533A1 (en) 2014-11-10 2015-11-09 Method for manufacturing an n-type monocrystalline silicon ingot
TW104137062A TW201623703A (en) 2014-11-10 2015-11-10 Method of fabrication of an ingot of n-type single-crystal silicon with a controlled concentration of oxygen-based thermal donors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1460855A FR3028266B1 (en) 2014-11-10 2014-11-10 PROCESS FOR MANUFACTURING ANY-TYPE MONOCRYSTALLINE SILICON BILGE WITH CONTROLLED OXYGEN THERMAL CONCENTRATION CONCENTRATION

Publications (2)

Publication Number Publication Date
FR3028266A1 FR3028266A1 (en) 2016-05-13
FR3028266B1 true FR3028266B1 (en) 2016-12-23

Family

ID=52102960

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1460855A Expired - Fee Related FR3028266B1 (en) 2014-11-10 2014-11-10 PROCESS FOR MANUFACTURING ANY-TYPE MONOCRYSTALLINE SILICON BILGE WITH CONTROLLED OXYGEN THERMAL CONCENTRATION CONCENTRATION

Country Status (4)

Country Link
EP (1) EP3218533A1 (en)
FR (1) FR3028266B1 (en)
TW (1) TW201623703A (en)
WO (1) WO2016075092A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6669133B2 (en) * 2017-06-23 2020-03-18 株式会社Sumco Method for predicting thermal donor generation behavior of silicon wafer, method for evaluating silicon wafer, and method for manufacturing silicon wafer
DE102017215332A1 (en) * 2017-09-01 2019-03-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. A single crystal of <100> oriented silicon doped with n-type dopant and methods of producing such a single crystal
CN114637954B (en) * 2022-03-25 2023-02-07 宁夏中欣晶圆半导体科技有限公司 Method for calculating axial distribution of carbon content of crystal bar

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS507557B1 (en) * 1970-08-26 1975-03-26
US5363796A (en) * 1991-02-20 1994-11-15 Sumitomo Metal Industries, Ltd. Apparatus and method of growing single crystal
JP2007261846A (en) * 2006-03-28 2007-10-11 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Method for manufacturing defect-free silicon single crystal
FR2997096B1 (en) 2012-10-23 2014-11-28 Commissariat Energie Atomique PROCESS FOR FORMING A SILICON INGOT OF UNIFORM RESISTIVITY

Also Published As

Publication number Publication date
TW201623703A (en) 2016-07-01
EP3218533A1 (en) 2017-09-20
WO2016075092A1 (en) 2016-05-19
FR3028266A1 (en) 2016-05-13

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